CN102479876A - Solar battery manufacture method and solar battery manufactured according to manufacture method - Google Patents
Solar battery manufacture method and solar battery manufactured according to manufacture method Download PDFInfo
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- CN102479876A CN102479876A CN2010105709410A CN201010570941A CN102479876A CN 102479876 A CN102479876 A CN 102479876A CN 2010105709410 A CN2010105709410 A CN 2010105709410A CN 201010570941 A CN201010570941 A CN 201010570941A CN 102479876 A CN102479876 A CN 102479876A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a solar battery manufacture method, which comprises the following steps of: a surface defect removal (SDR) step: removing surface defects from the surface of a silicon ingot cut polycrystalline silicon base plate; and a texturing step: forming a plurality of micro bulges on a light receiving surface of the base plate after the SDR step.
Description
Technical field
The solar cell that the present invention relates to method for manufacturing solar battery and make according to this manufacturing approach.
Background technology
Solar cell is the device that sunlight is converted into electric energy, uses two kinds of semiconductor generatings that are called P type semiconductor, N type semiconductor.
Illumination is mapped on the solar cell, produces electronics and hole in inside, and the electric charge of generation moves to P type semiconductor, N type semiconductor, and according to this phenomenon, between P type semiconductor and N type semiconductor, produces potential difference (photoelectromotive force).At this moment, if on solar cell, connect load, electric current then can occur and flow.
According to employed material, solar cell roughly is divided into solar cell that uses the silicon material and the solar cell that uses the compound material; Further, the solar cell of silicon material be divided into monocrystalline and polycrystalline system of crystallization silicon and noncrystalline be silicon.
At present, be the solar cell of silicon material as the major part of solar power system usually.
Especially, because conversion efficiency is high, stability is high, the monocrystalline and the polycrystalline solar cell of the system of crystallization silicon material that is widely used.
Wherein, though the solar cell of monocrystalline silicon material has the high advantage of efficient,, have the high shortcoming of manufacturing cost.
With respect to this, the solar cell of polysilicon material is compared with monocrystalline silicon substrate, though have inefficient shortcoming, has low cost of manufacture and can produce easy advantage in a large number.
As stated; The solar cell of system of crystallization silicon material, the especially solar cell of polysilicon material, owing to have low cost of manufacture and the easy advantage of a large amount of production, so demand increases; In order to improve inefficient shortcoming, need the multiple solution of research.
In addition, when silicon substrate is monocrystalline silicon, with formation such as pulling methods; When silicon substrate is polysilicon, use wire saw (saw) etc., the silicon ingot that cutting is formed by casting and making.
But in the process of cutting silicon ingot, substrate surface can crack and wait surface damage, if do not remove this surface damage, then has the problem of conversion efficiency of solar cell reduction.
Summary of the invention
The object of the present invention is to provide method for manufacturing solar battery, the method for manufacturing solar battery of polysilicon material and the solar cell of making according to this manufacturing approach; After the substrate surface removal surface damage through cutting; Form a plurality of micro-protuberances and reduce reflectivity, thereby can improve the efficient of solar cell.
For realizing described the object of the invention, the present invention provides method for manufacturing solar battery, comprising: the SDR step, from the surface removal surface damage of the polycrystalline silicon substrate that forms by silicon ingot cutting; Surface coarsening (Texturing) step after the described SDR step, forms a plurality of micro-protuberances on the sensitive surface of substrate.
Substrate after the said SDR step is preferably the desirable area by the formed shape in edge of each substrate, with the long-pending ratio of the real surface of substrate greater than 1.00, less than 1.11.
Substrate after the said SDR step is preferably from each substrate surface and arbitrarily selectively during point selection 1.00cm * 1.00cm square, selects the real surface in place long-pending greater than 1.00cm
2, less than 1.11cm
2
And; Substrate after the said surface coarsening step; The ratio of length of length and second dummy line that is preferably first dummy line is greater than 1.00, less than 1.11; When the length of described first dummy line is meant and blocks at the edge of substrate, connect the distance on first summit to second summit that is positioned at other end micro-protuberance of the micro-protuberance that is positioned at an end in the cross section; The length of described second dummy line is meant the distance that connects each micro-protuberance summit on summit, described first summit to the second along the cross section.
And; Substrate after the said surface coarsening step; The ratio of length of length and second dummy line that is preferably first dummy line is greater than 1.00, less than 1.11; The length of described first dummy line is when the anywhere of substrate surface blocks with the straight line of 1.00cm, connects the distance on first summit to second summit that is positioned at other end micro-protuberance of the micro-protuberance that is positioned at an end in the cross section; The length of described second dummy line is meant the distance that connects each micro-protuberance summit on summit, described first summit to the second along the cross section.
After the said SDR step, can form a plurality of protuberances, described protuberance has compares the wideer width of micro-protuberance that is formed by described surface coarsening step.And; From the horizontal range of the summit of said protuberance to adjacent peak valley is W; Vertical range from the peak to peak valley is called H; During R=H/W, when the substrate after the said SDR step is preferably and blocks at the edge of each substrate, along this cross section and the corresponding R mean value of each protuberance greater than 0.00, less than 0.50.
And; From the horizontal range of the summit of said protuberance to adjacent peak valley is W; From the vertical range of summit to peak valley is H; During R=H/W, the substrate after the said SDR step is preferably when the anywhere of each substrate surface blocks with the straight line of 1.00cm, and the mean value of the R corresponding with each protuberance is greater than 0.00, less than 0.50 in this cross section.
Said micro-protuberance is preferably formed into its width and highly respectively less than 2 μ m, and described micro-protuberance more preferably forms its width and highly respectively less than 1 μ m.
Said micro-protuberance be preferably formed into its width with the height ratio in length and breadth less than 2.0.
Described SDR step can be by implementing like alkaline aqueous solutions such as the NaOH aqueous solution or the KOH aqueous solution.
Described surface coarsening step can be implemented by reactive ion etching.
The present invention also provides the solar cell according to described method for manufacturing solar battery manufacturing.
Method for manufacturing solar battery according to the present invention has following advantage: remove as after the surface damages such as crackle through the SDR step, on sensitive surface, form micro-protuberance, thereby can significantly improve the conversion efficiency of solar cell.
Especially, for can efficiently making solar cell, the present invention provides best value conditions in each step, through the process conditions of the best, has the advantage that can make the solar cell that conversion efficiency significantly improves.
Description of drawings
Fig. 1 is the conceptual schematic view of an embodiment of solar cell.
Fig. 2 is the partial cross section figure that implements SDR step and surface coarsening step substrate cross section afterwards.
Fig. 3 is the generalized schematic that shows SDR step shape afterwards.
Fig. 4 is an Etaching device cutaway view of implementing the surface coarsening step in the method for manufacturing solar battery of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the solar cell of method for manufacturing solar battery according to the present invention and manufacturing approach manufacturing thereof is elaborated.
Method for manufacturing solar battery according to the present invention comprises: the SDR step, from the surface removal surface damage of the polycrystalline silicon substrate of silicon ingot cutting; Surface coarsening (Texturing) step after the SDR step, forms a plurality of micro-protuberances 220 at the sensitive surface of substrate.
Solar cell
At first, the solar cell that is suitable for regard to the present invention carries out following brief description.
Shown in 1 figure, an embodiment of the solar cell 100 that is suitable for as the present invention comprises: silicon substrate 110; Semiconductor layer 120 is formed on the sensitive surface of silicon substrate 110; Antireflection film 130 is formed on the semiconductor layer 120; First electrode 140 is formed on the antireflection film 130; And second electrode 150, be formed on the bottom surface of silicon substrate 110.
Silicon substrate 110 is polysilicons, has P type or N type semiconductor characteristic.At this moment, the characteristic of semiconductor of the characteristic of semiconductor that had of semiconductor layer 120 and silicon substrate 110 is opposite.Wherein, silicon substrate 110 cuts silicon ingots and makes.
In addition,, preferably, silicon substrate 110 is carried out the sensitive surface alligatoring, that is, on sensitive surface, form a plurality of micro-protuberances 220 as the method that the reflectivity that reduces sensitive surface is raised the efficiency.Through after state form micro-protuberance 220 on the surface of silicon substrate 110 like reactive ion etching dry ecthings such as (Reactive Ion Etching).
The SDR step
The SDR step is on the surface of the substrate 110 that is formed by the silicon ingot cutting, to remove the step of the surface damage that forms in the cutting process.
The SDR step is by implementing like the alkaline aqueous solution of wet etchings such as the NaOH aqueous solution or the KOH aqueous solution, wherein, can suitably select the concentration of NaOH in the NaOH or the KOH aqueous solution or KOH according to process conditions etc.
Especially, to shown in Figure 3, form a plurality of protuberances 210 after the SDR step like Fig. 1, described protuberance 210 have with by after the formed micro-protuberance 220 of surface coarsening step stated compare also wide width.
The purpose of SDR step is, on the sensitive surface of substrate 110, removes crackle etc. and forms smooth face, and planarization substrate 110 is impossible fully, forms like Fig. 2 and protuberance 210 shown in Figure 3 inevitably.
Substrate 110 is removed crackle etc. through the SDR step, on the surface of substrate 110, gently forms protuberance 210.
In addition; From after the experimental result stated can find out; Implement to form protuberance 210 after the SDR step, implement to form micro-protuberance 220 after the surface coarsening step, the conversion efficiency of solar cell will change according to the surface characteristic of the substrate 110 after SDR step or the enforcement of surface coarsening step.
Promptly; As shown in Figure 2; From the horizontal range of the summit of protuberance 210 to adjacent peak valley is W, is H from the vertical range of summit to peak valley, during R=H/W; Be preferably when the anywhere on substrate 110 surface blocks with the straight line of 1.00cm, the mean value (H1/W1, H2/W2 ..) of the R of corresponding each protuberance 210 is greater than 0.00, less than 0.50 from this cross section.
In other words; From the horizontal range of the summit of protuberance 210 to adjacent peak valley is W, is H from the vertical range of summit to peak valley, during R=H/W; Be preferably when blocking at the edge of substrate 110, along the mean value of this cross section and each protuberance 210 corresponding R greater than 0.00, less than 0.50.Wherein, horizontal range is meant the surperficial parallel horizontal direction distance with substrate 110.
And as shown in Figure 3, the substrate 110 after SDR step and the surface coarsening step is preferably the desirable area A by the formed shape in edge of substrate 110
Ideal, with the long-pending A of the real surface of substrate 110
RealRatio greater than 1.00, less than 1.11.
In other words, the substrate 110 after SDR step and the surface coarsening step is preferably from arbitrarily selectively during point selection 1.00cm * 1.00cm square of substrate 110 surfaces, selects the real surface in place long-pending greater than 1.00cm
2, less than 1.11cm
2
And; If describe aforesaid area condition with the length condition; So the substrate 110 after SDR step and the surface coarsening step be preferably first dummy line the ratio of length of length and second dummy line greater than 1.00, less than 1.11; When the length of described first dummy line is meant and blocks at the edge of substrate 110, connect the distance on second summit of first summit to the micro-protuberance that is positioned at the other end 220 of the micro-protuberance 220 that is positioned at an end in the cross section; The length of described second dummy line is meant along the cross section and connects from the distance on each micro-protuberance 220 summit on summit, first summit to the second.
In other words; Substrate 110 after SDR step and the surface coarsening step is preferably the ratio of length of length and second dummy line of first dummy line greater than 1.00, less than 1.11; The length of described first dummy line is meant the anywhere on substrate 110 surfaces; When blocking, connect the distance on second summit of first summit to the micro-protuberance that is positioned at the other end 220 of the micro-protuberance that is positioned at an end in the cross section with the straight line of 1.00cm; The length of described second dummy line is meant: connect from the distance on each micro-protuberance 220 summit on summit, first summit to the second along the cross section.
Wherein, limiting after the SDR step or substrate 110 value conditions after the surface coarsening step, is because the substrate 110 after the SDR step is inhomogeneous, produce aberration according to the position and cause appearance poor, and aberration causes solar battery efficiency to reduce.
In addition, as an example of the process conditions of SDR step, under about 85 ℃ temperature, substrate 110 soaked in the NaOH of the 25% percentage by weight aqueous solution implemented wet etching in several minutes in the present embodiment (experimental example).
The surface coarsening step
The surface coarsening step is to implement to form the step that a plurality of micro-protuberances 220 come the alligatoring sensitive surface on the surface of substrate 110 after the SDR step.
By implement the surface coarsening step like dry ecthings such as reactive ion etchings, the Etaching device that is used to implement the surface coarsening step is as shown in Figure 4.
Supported portion 330 is set to directly or through carrier 230 supporting substrates 110, and silicon substrate 110 is loaded in 230 last times of carrier, and carrier 230 is equipped in the supported portion 330.Wherein, carrier 230 is set to load a plurality of substrates 110 and transfers substrate 110, can have multiple structure.
Thereby being set to apply power supply, the power supply portion of applying in vacuum chamber 310, can form plasma to implement dry ecthing; According to operation; For example; Can constitute and make vacuum chamber 310 and gas blowing portion 340 ground connection, and to applying RF power supply 360 etc. to supported portion 330, but also can form multiple structure.
And, under the state that covers said substrate with the overlay that is formed with a plurality of through holes, implement dry ecthing on the sensitive surface of substrate 110, to be formed uniformly a plurality of micro-protuberances 220.
At this moment, the process conditions of implementing the surface coarsening step can have multiple structure according to the material of substrate 110, the structure of solar cell etc.
Embodiment (experimental example) to the process conditions that forms a plurality of micro-protuberances 220 explains as follows:
The gas that flows in the vacuum chamber 310 is to comprise F and Cl gas, for example, can comprise CHF
3, Cl
2, O
2, SF
6Deng gas, can use the CHF of 18～25sccm
3, 48～52sccm Cl
2, 9～11sccm O
2, 75～82sccm SF
6Wherein, can also comprise H
2O.
Reaction pressure is approximately about 7Pa～8Pa, and the power supply that is applied is approximately about 500W, and activity time is approximately 3 minutes～about 10 minutes.
And, as implied above, after the sensitive surface of substrate 110 forms micro-protuberance 220 by dry ecthing,, need to remove attached to the compound on the substrate 110 in order to carry out subsequent handling such as semiconductor layer formation.
Removal comprises attached to the method for the compound on the substrate: substrate 110 is immersed in is equipped with as applying afterwards the method that ultrasonic wave removes compound in the container of removal liquid such as water; Substrate 110 is immersed in the method for removing compound in the container that the HF aqueous solution is housed.
In addition, the micro-protuberance 220 that is formed by the surface coarsening step preferably is formed its width and highly respectively less than 2 μ m, more preferably is formed less than 1 μ m.
Simultaneously, micro-protuberance 220 preferably be formed its width with the height ratio in length and breadth less than 2.0.Because, if the aspect ratio of micro-protuberance 220 is big, may be damaged, thus cause leaking electricity the big problem of rheology.
And, on the surface of substrate 110, form after a plurality of micro-protuberances 220, substrate 110 successively by semiconductor layer form step, antireflection film forms step and electrode forms step, manufactures solar cell.
Specific embodiment
Especially, of following table, can confirm that through experiment when with the value conditions after the disclosed enforcement of the present invention SDR step substrate being made, the conversion efficiency of solar cell significantly improves.
Can know with reference to above-mentioned table: till the ratio to 1.11 that desirable area and real surface amass, the conversion efficiency smooth variation, 1.11 sharply change later on.
Recognize that through aforesaid experimental result value conditions is implemented substrate 110 afterwards to the SDR step and proposed multiple value conditions for the significance level of implementing SDR step substrate afterwards.
Below only to realizing that the preferred embodiments of the present invention are illustrated, protection scope of the present invention is not limited to the above embodiments, yet should comprise above-mentioned technological thought of the present invention and the technological thought of containing its aim.
Claims (15)
1. a method for manufacturing solar battery is characterized in that, comprising:
The SDR step, from the surface removal surface damage of polycrystalline silicon substrate, said polycrystalline silicon substrate is formed by the silicon ingot cutting;
The surface coarsening step after said SDR step, forms a plurality of micro-protuberances on the sensitive surface of substrate.
2. method for manufacturing solar battery according to claim 1 is characterized in that, the substrate after the said SDR step, by the desirable area of the formed shape in edge of each substrate, with the long-pending ratio of the real surface of substrate greater than 1.00, less than 1.11.
3. method for manufacturing solar battery according to claim 1 is characterized in that, substrate after the said SDR step when from the optional place of each substrate surface, selecting 1.00cm * 1.00cm square, selects the real surface in place long-pending greater than 1.00cm
2, less than 1.11cm
2
4. method for manufacturing solar battery according to claim 1; It is characterized in that; Substrate after the said surface coarsening step; The ratio of the length of the length of first dummy line and second dummy line is greater than 1.00, less than 1.11, when the length of wherein said first dummy line is meant and blocks at the edge of substrate, connects the distance on second summit of first summit to the micro-protuberance that is positioned at the other end of the micro-protuberance that is positioned at an end in the cross section; The length of described second dummy line is meant the distance that connects each micro-protuberance summit on summit, described first summit to the second along the cross section.
5. method for manufacturing solar battery according to claim 1; It is characterized in that; Substrate after the said surface coarsening step; The ratio of the length of the length of first dummy line and second dummy line is greater than 1.00, less than 1.11, and the length of wherein said first dummy line is meant when the anywhere of substrate surface blocks with the straight line of 1.00cm, connects the distance on second summit of first summit to the micro-protuberance that is positioned at the other end of the micro-protuberance that is positioned at an end in the cross section; The length of described second dummy line is meant that along the cross section connection is from the distance on the summit of each micro-protuberance on summit, described first summit to the second.
6. method for manufacturing solar battery according to claim 1 is characterized in that, after the said SDR step, forms a plurality of protuberances, and described protuberance has the width wideer than the micro-protuberance that is formed by described surface coarsening.
7. method for manufacturing solar battery according to claim 6; It is characterized in that; Be W, be H from the horizontal range of the summit of said protuberance to adjacent peak valley from the vertical range of summit to peak valley, during R=H/W, each substrate after the said SDR step; When the edge of each substrate blocks, along the mean value of said cross section and the corresponding R of each protuberance greater than 0.00, less than 0.50.
8. method for manufacturing solar battery according to claim 6; It is characterized in that, be W from the horizontal range of the summit of said protuberance to adjacent peak valley, is H from the vertical range of summit to peak valley; During R=H/W; Each substrate after the said SDR step, when the anywhere of each substrate surface blocked with the straight line of 1.00cm, the mean value of the R corresponding with each protuberance was greater than 0.00, less than 0.50 in this cross section.
9. according to any described method for manufacturing solar battery of claim of claim 1 to 8, it is characterized in that described micro-protuberance is formed width and highly respectively less than 2 μ m.
10. according to any described method for manufacturing solar battery of claim of claim 1 to 8, it is characterized in that described micro-protuberance is formed the ratio in length and breadth of width and height less than 2.0.
11. according to any described method for manufacturing solar battery of claim of claim 1 to 8, it is characterized in that: described SDR is implemented by alkaline aqueous solution.
12. method for manufacturing solar battery according to claim 11 is characterized in that, described alkaline aqueous solution is the NaOH aqueous solution or the KOH aqueous solution.
13. method for manufacturing solar battery according to claim 11 is characterized in that, described surface coarsening step is implemented by reactive ion etching.
14. solar cell according to any described method for manufacturing solar battery manufacturing of claim 1 to 8.
15. the solar cell of a method for manufacturing solar battery manufacturing according to claim 13.
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| CN2010105709410A CN102479876A (en) | 2010-11-19 | 2010-11-19 | Solar battery manufacture method and solar battery manufactured according to manufacture method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023097973A1 (en) * | 2021-12-03 | 2023-06-08 | 宁夏隆基乐叶科技有限公司 | Silicon wafer and preparation method therefor, and solar cell |
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| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| US7128975B2 (en) * | 2003-01-28 | 2006-10-31 | Kyocera Corporation | Multicrystalline silicon substrate and process for roughening surface thereof |
| CN101350373A (en) * | 2007-07-18 | 2009-01-21 | 科冠能源科技股份有限公司 | Solar battery wafer with multiplex etching structure and manufacturing method thereof |
| CN101651156A (en) * | 2008-08-15 | 2010-02-17 | 新日光能源科技股份有限公司 | Photoelectric conversion assembly and manufacturing method thereof |
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2010
- 2010-11-19 CN CN2010105709410A patent/CN102479876A/en active Pending
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| US4229233A (en) * | 1979-02-05 | 1980-10-21 | International Business Machines Corporation | Method for fabricating non-reflective semiconductor surfaces by anisotropic reactive ion etching |
| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| US7128975B2 (en) * | 2003-01-28 | 2006-10-31 | Kyocera Corporation | Multicrystalline silicon substrate and process for roughening surface thereof |
| CN101350373A (en) * | 2007-07-18 | 2009-01-21 | 科冠能源科技股份有限公司 | Solar battery wafer with multiplex etching structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023097973A1 (en) * | 2021-12-03 | 2023-06-08 | 宁夏隆基乐叶科技有限公司 | Silicon wafer and preparation method therefor, and solar cell |
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Application publication date: 20120530 |