CN102467675B - A kind of radio-frequency (RF) tag and resonant circuit structure thereof - Google Patents
A kind of radio-frequency (RF) tag and resonant circuit structure thereof Download PDFInfo
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- CN102467675B CN102467675B CN201110357027.2A CN201110357027A CN102467675B CN 102467675 B CN102467675 B CN 102467675B CN 201110357027 A CN201110357027 A CN 201110357027A CN 102467675 B CN102467675 B CN 102467675B
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Abstract
The present invention provides a kind of radio-frequency (RF) tag, and including resonant circuit structure and radio-frequency unit, described resonant circuit structure includes: the first conductive layer；The second conductive layer arranged separately with described first conductive layer；And it is connected to the two conductive seat portions at described first conductive layer and the second conductive layer two ends.Described first conductive layer is provided with slit.Described radio-frequency unit is electrically coupled to described first conductive layer and is positioned on described slit.
Description
Technical field
The present invention relates to a kind of radio frequency tag technology, especially one can on the metal surface or be embedded in metal surface
The radio-frequency (RF) tag used and resonant circuit structure thereof.
Background technology
Electronic equipment can be launched by the electromagnetic signal of a kind of modulation, and this electromagnetic signal can be read by corresponding reader
Take.This electronic equipment is widely used in Tracking Recognition article, especially supply chain management, or the product of project level with
Track.This equipment being referred to as radio-frequency (RF) tag, including a radio-frequency unit being electrically connected to antenna, this radio-frequency unit can be tuned in
Particular job frequency, such as hyperfrequency (Ultra High Frequency, UHF) RF identification (Radio Frequency
Identification, RFID) label and microwave radio identification label.This label can be passive label, and this label leads to
Cross signal retroeflection interactive with reader；Can also be semi-passive label, this label be supplied by himself power supply or external electromagnetic waves
Electricity；Can also be active tag, this label be powered by himself power supply.
One of shortcoming of above-mentioned radio-frequency (RF) tag is: when this label is placed on metal surface, and tag reader scope will
Reduce significantly.Label will be unable to be read in the ordinary course of things.When this label is placed the distance from metal surface less than λ/4
Time (λ represents the wavelength that radio-frequency (RF) tag operating frequency is corresponding), the read range of this radio-frequency (RF) tag also can reduce.When this label is put
When being disposed adjacent to or be placed directly within metal surface, the surface current of metal surface will reduce the efficiency of this radio-frequency (RF) tag.Therefore, right
For ultrahigh-frequency radio-frequency tag, microwave radio label and more typical passive radio frequency label, follow the trail of metal object right and wrong
The most difficult.
The further drawback of above-mentioned radio-frequency (RF) tag is: radio-frequency (RF) tag is typically to be designed for following the trail of such as paper and low electric capacity
Parent's RF Materials such as rate plastics.When this label is placed on non-parent RF Materials such as high-dielectric constant material, electromagnetic material and liquid
During body, read range also will reduce, and generally reach unacceptable level.
Summary of the invention
In view of above-mentioned condition, it is necessary to provide a kind of radio-frequency (RF) tag and resonant circuit structure thereof.
The present invention proposes a kind of radio-frequency (RF) tag, and this radio-frequency (RF) tag includes a resonant circuit structure and radio-frequency unit, described
Resonant circuit structure includes: the first conductive layer；The second conductive layer arranged separately with described first conductive layer；And connect respectively
In described first conductive layer and the two conductive seat portions at the second conductive layer two ends；Wherein, described first conductive layer is provided with slit, institute
State radio-frequency unit be electrically coupled to described first conductive layer and be positioned on described slit.
Described first conductive layer can be arranged in parallel with the second conductive layer.Described radio-frequency (RF) tag also includes being arranged at described first
Dielectric layer between conductive layer and the second conductive layer.
Described radio-frequency unit includes ultrahigh frequency radio frequency chip；Described ultrahigh frequency radio frequency chip includes that two signals are defeated
Go out end.Described radio-frequency unit is directly electrically connected to described first conductive layer.Described radio-frequency (RF) tag also includes that being located at described first leads
The 3rd conductive layer in electric layer, described 3rd capacitor conductive layer is coupled in the first conductive layer, and described 3rd conductive layer electrical connection
In described radio-frequency unit.Being basically the same of described 3rd conductive layer and the first conductive layer, described 3rd conductive layer includes using
Antenna in described radio-frequency unit.Described 3rd conductive layer is divided into multiple spaced island part by least one slit,
And described radio-frequency unit is located at least one slit described.At least one slit of described 3rd conductive layer and the first conductive layer
Slit equivalently-sized.Described 3rd conductive layer includes that multiple conductive pad, described conductive pad are electrically connected to described radio-frequency unit
And it is capacitively coupled to described first conductive layer.
The impedance of described resonant circuit structure and the impedance conjugate impedance match of described radio-frequency unit.Set on described first conductive layer
There is at least one additional slit, for launching the electromagnetic wave that polarization of ele direction launched from another slit is different.Described penetrate
Frequency marking label also include at least one additional radio-frequency unit, at least one additional radio-frequency unit described be positioned at described at least one add
On slit.
Described radio-frequency (RF) tag also includes the inner conducting layer being located between described first conductive layer and the second conductive layer.In described
Conductive layer can be electrically connected to the second conductive layer by multiple conductive components.Described inner conducting layer is provided with slit.Described radio frequency mark
Label can farther include multiple inner conducting layer being located between described first conductive layer and the second conductive layer.
Described two conductive seat portions are arranged in parallel, and described slit is parallel to described conductive seat portion.Described radio frequency mark
Signing and also include being connected to the separating component of described first conductive layer, described separating component is inductively or capacitively.
Described radio-frequency (RF) tag also includes that metal shell, described metal shell are provided with multiple projection, and described projection is according to difference
Arrange in the direction of described radio-frequency (RF) tag polarised direction.One intrinsic inductance or an intrinsic capacity are formed at described first conductive layer
On.
The longest dimension being smaller in size than described conductive seat portion of the longest dimension of described first conductive layer and the second conductive layer
The size of degree.Described first conductive layer is divided at least two spaced island part by slit.Described first conductive layer and
A magnetic material layer it is additionally provided with between two conductive layers.
It addition, the present invention also provides for a kind of for the resonant circuit structure by electromagnetic transmission to radio-frequency unit, described humorous
The circuit structure that shakes includes: the first conductive layer；The second conductive layer arranged separately with described first conductive layer；And be connected to
Described first conductive layer and the two conductive seat portions at the second conductive layer two ends；Wherein, described first conductive layer is provided with for supporting
The slit of described radio-frequency unit, radio-frequency unit described in described first conductive layer electric coupling.
Accompanying drawing explanation
Fig. 1 is the axonometric chart of the radio-frequency (RF) tag of the embodiment of the present invention one.
Fig. 2 is the equivalent circuit theory figure of resonant circuit structure in Fig. 1.
Fig. 3 A is the radiation gain figure that Fig. 1 includes when the radio-frequency (RF) tag of this resonant circuit structure is placed in metal surface.
Fig. 3 B is the impedance characteristic that Fig. 1 includes when the radio-frequency (RF) tag of this resonant circuit structure is placed in metal surface
Figure.
Fig. 3 C shows the read range that when RFID tag is placed in metal surface in Fig. 1, measurement is arrived.
Fig. 4 A is the radio-frequency (RF) tag schematic diagram of another embodiment of the present invention, and wherein radio-frequency unit module is disposed adjacent to Fig. 1 institute
The position of the first conductive layer shown.
Fig. 4 B is the close-up schematic view of radio-frequency unit module in Fig. 4 A.
Fig. 5 A is the equivalent circuit theory figure of existing commercial passive type ultrahigh frequency radio frequency identification chip.
Fig. 5 B is the equivalent circuit theory figure of the radio-frequency unit module being capacitively coupled to resonant circuit structure in Fig. 4 A.
Fig. 6 A is the top view of another embodiment of the present invention radio-frequency (RF) tag, and wherein this radio-frequency (RF) tag includes a radio-frequency unit
And radio-frequency label antenna.
Fig. 6 B is that the radio-frequency (RF) tag in Fig. 6 A is positioned over the axonometric chart of resonant circuit structure in Fig. 1.
Fig. 7 A is the plane graph of existing commercial passive type ultrahigh frequency radio frequency identification chip, and this chip is Avery
The AD843 chip of Dennison company.
Fig. 7 B is the schematic diagram of another embodiment of the present invention radio-frequency (RF) tag, and this label uses the super high frequency radio frequency in Fig. 7 A to know
Other chip.
Fig. 7 C is the close-up schematic view of Fig. 7 B.
Fig. 8 A is the plane graph of existing commercial radio frequency identification tape.
Fig. 8 B is the schematic diagram of another embodiment of the present invention radio-frequency (RF) tag, and this label uses the super high frequency radio frequency in Fig. 8 A to know
Do not carry.
Fig. 8 C is the close-up schematic view of Fig. 8 B.
Fig. 9 A is the simulation schematic diagram that in Fig. 1, the impedance of resonant circuit structure changes with this resonant circuit structure thickness.
Fig. 9 B is the simulation signal that in Fig. 1, the radiation gain of resonant circuit structure changes with this resonant circuit structure thickness
Figure.
Fig. 9 C is the simulation signal that in Fig. 1, the impedance of resonant circuit structure changes with the slit sizes of this resonant circuit structure
Figure.
Fig. 9 D is the simulation that in Fig. 1, the radiation gain of resonant circuit structure changes with the slit sizes of this resonant circuit structure
Schematic diagram.
Fig. 9 E be in Fig. 1 the impedance of resonant circuit structure with its radio-frequency unit along the slit direction position of this resonant circuit structure
Put the simulation schematic diagram of change.
Fig. 9 F be in Fig. 1 the radiation gain of resonant circuit structure with its radio-frequency unit along the slit side of this resonant circuit structure
To the simulation schematic diagram of change in location.
Figure 10 A be in another embodiment of the present invention the impedance of radio-frequency (RF) tag with its radio-frequency unit module and resonant circuit structure
The simulation schematic diagram of spacing size variation.
Figure 10 B be in another embodiment of the present invention the radiation gain of radio-frequency (RF) tag with its radio-frequency unit module and resonance circuit
The simulation schematic diagram of structure pitch size variation.
Figure 10 C be in another embodiment of the present invention the impedance of radio-frequency (RF) tag with the conductive seat portion width of its resonant circuit structure
The simulation schematic diagram of degree change.
Figure 10 D be in another embodiment of the present invention the radiation gain of radio-frequency (RF) tag with the conductive seat of its resonant circuit structure
The simulation schematic diagram of portion's change width.
Figure 10 E be in another embodiment of the present invention the impedance of radio-frequency (RF) tag with the mould of the change width of its resonant circuit structure
Intend schematic diagram.
Figure 10 F be in another embodiment of the present invention the radiation gain of radio-frequency (RF) tag with the change width of its resonant circuit structure
Simulation schematic diagram.
Figure 11 is two radio-frequency unit schematic diagram in another embodiment of the present invention, and this two radio-frequency unit is disposed vertically and electrically connects
The first conductive layer in this resonance circuit.
Figure 12 is the schematic diagram of a kind of dual polarization radio frequency label in another embodiment of the present invention.
Figure 13 shows the resonant circuit structure of the RF identification chip being applicable to dual-port in another embodiment of the present invention
May setting.
Figure 14 is the schematic diagram of the radio-frequency (RF) tag having additional inner conducting layer in another embodiment of the present invention.
Figure 15 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 16 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 17 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 18 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 19 A is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 19 B is another schematic diagram of radio-frequency (RF) tag in Figure 19 A.
Figure 20 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 21 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 22 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Figure 23 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and enforcement, radio-frequency (RF) tag of the present invention and resonant circuit structure thereof are described in detail, and
Other examples provide in the following description the most in the lump.Present pre-ferred embodiments describes radio-frequency (RF) tag and resonance electricity thereof in detail
Line structure, although it will be apparent to one skilled in the art that some is to radio-frequency (RF) tag of the present invention and resonance circuit thereof
The feature of the understanding of structure not particular importance, for the ease of understanding explanation, may be not described at this.
Furthermore, it is desirable to explanation, radio-frequency (RF) tag described below and resonant circuit structure thereof are only the preferable of the present invention
Embodiment, not makees any pro forma restriction to the present invention, although the present invention discloses as follows, so with preferred embodiment
And it is not limited to the present invention, and any those skilled in the art, in the range of without departing from technical solution of the present invention, when
The technology contents of available following announcement is made a little change or is modified to the Equivalent embodiments of equivalent variations, as long as be without departing from
Technical solution of the present invention content, any simple modification, equivalent that following example are made by the technical spirit of the foundation present invention become
Change and modify, all still falling within the range of technical solution of the present invention.
Fig. 1 is the axonometric chart of the radio-frequency (RF) tag of the embodiment of the present invention one.Refer to Fig. 1, this radio-frequency (RF) tag include one humorous
Shake circuit structure, and described resonant circuit structure includes one by the first conductive layer 1 and the second conductive layer 2 of spaced setting
The metal level formed；First conductive layer 1 and the second conductive layer 2 are arranged in parallel and be connected to two conductive seat portions 3,4；
Can be provided with one or more dielectric layer between first conductive layer 1 and the second conductive layer 2, this dielectric layer can be air.First
Can be provided with one or more magnetic material layer between conductive layer 1 and the second conductive layer 2, this magnetic material layer can be ferromagnetic.First
Conductive layer 1 is provided with a slit 5, and the first conductive layer 1 is divided into two spaced island part by this slit 5.This radio frequency mark
Label may also include a radio-frequency unit 6, and this radio-frequency unit 6 can be electrically coupled to the first conductive layer 1 and be positioned on slit 5.
Fig. 2 is the equivalent circuit theory figure of resonant circuit structure in Fig. 1.Refer to Fig. 2, consider one for convenience simply
Model, first conductive layer the 1, second conductive layer 2 and two conductive seat portions 3,4 are considered inductance, and narrow on the first conductive layer 1
Seam 5 is considered electric capacity, and this resonant circuit structure is for suppressing the generation of the surface wave of metal surface.When this resonant circuit structure
During the matches impedances of impedance and this radio-frequency unit 6, particularly during both conjugate impedance match, the ceiling capacity of (surface wave) will be turned
Move on to radio-frequency unit 6.
Fig. 3 A is the radiation gain figure that Fig. 1 includes when the radio-frequency (RF) tag of this resonant circuit structure is placed in metal surface.Figure
3B is the impedance characteristic figure that Fig. 1 includes when the radio-frequency (RF) tag of this resonant circuit structure is placed in metal surface.This metal watch
The radiation gain in face is about 3 dBi, and this shows that the impedance of resonant circuit structure is penetrated with this in hyperfrequency penetrates identification frequency chip
Frequently the matches impedances of device 6.In order to make the energy transferring to RF identification frequency chip from resonant circuit structure reach maximum, need
Return loss between RF identification chip and resonant circuit structure is down to minimum.RF identification frequency chip and resonance circuit
Return loss between structure is:
|S|2=||2, 0 ≤ |S|2 ≤ 1,
Wherein, ZLFor the impedance of antenna (i.e. resonant circuit structure), ZSImpedance for RF identification chip.
Fig. 3 C shows the read range that when RFID tag is placed in metal surface in Fig. 1, measurement is arrived, in (tranmitting frequency
For) 920 MHz time, this maximum read range is about 9m.
Fig. 4 A is the radio-frequency (RF) tag schematic diagram of another embodiment of the present invention, and its radio-frequency unit module 8 is disposed adjacent to shown in Fig. 1
The position of the first conductive layer 1.Fig. 4 B is the close-up schematic view of radio-frequency unit module 8 in Fig. 4 A.Refer to Fig. 4 A and figure
4B, this radio-frequency unit module 8 includes a conductive layer 10 and radio-frequency unit 9.Conductive layer 10 is again provided with one by conductive layer 10
It is divided into the slit 5 of two spaced island part.Radio-frequency unit 9 is electrically coupled to conductive layer 10 and is positioned at the slit of conductive layer 10
On 5.Electromagnetic energy transfers to this radio-frequency unit module 8 by Capacitance Coupled from the surface of the first conductive layer 1.Preferably, radio frequency
The conductive layer 10 of apparatus module 8 is basically the same with the first conductive layer 1, this have the advantage that and can simplify this radio frequency mark
Sign and reduce cost.
Consider capacity coupled mould between a simple radio-frequency unit module 8 and this resonant circuit structure for convenience
Type.Radio-frequency unit module 8 at free space, such as, will not work at shf band.Radio-frequency unit module 8 in the present embodiment
Conductive layer 10 is capacitively coupled to rather than is electrically connected to the first conductive layer 1.Fig. 5 A is that existing commercial passive type super high frequency radio frequency is known
The equivalent circuit theory figure of other chip, wherein electric capacity and inductance are for being connected in parallel.Fig. 5 B is to be capacitively coupled to resonance electricity in Fig. 4 A
The equivalent circuit theory figure of the radio-frequency unit module 8 of line structure.This passive type ultrahigh frequency radio frequency identification chip 9 is by two electric capacity even
It is connected to resonant circuit structure.The first conductive layer 1 of size and resonant circuit structure when the conductive pad 10 of radio-frequency unit module 8
Equivalently-sized, now the capacitance between radio-frequency unit module 8 and resonant circuit structure is maximum, Capacitance Coupled the off resonance produced
Impact will be minimized.If it is also seen that if the conductive pad 10 of radio-frequency unit module 8 is less, will cause radio-frequency unit 9 with
Impedance mismatch between resonant circuit structure, so that this resonant circuit structure off resonance.
Fig. 6 A is the top view of another embodiment of the present invention radio-frequency (RF) tag, and wherein this radio-frequency (RF) tag includes a radio-frequency unit
11 and radio-frequency label antenna 12.This radio-frequency (RF) tag is passive type super high frequency radio frequency identification label, and it is based on product electronic code
Second filial generation first kind agreement (EPC Class 1 Generation 2 standard) standard.This antenna 12 may be tuned to
RF identification chip 11 impedance matching.Fig. 6 B is that the radio-frequency (RF) tag in Fig. 6 A is positioned over resonant circuit structure 13 in Fig. 1
Axonometric chart.Resonant circuit structure 13 may be tuned to and RF identification chip 11 impedance matching.This resonant circuit structure receives
Electromagnetic energy will be transferred in this radio-frequency (RF) tag by Capacitance Coupled.
By above-described embodiment, can be that electric coupling connects between this radio-frequency unit or radio frequency chip and resonant circuit structure
Connecing mode, the most directly electrical connection or Capacitance Coupled connect (indirect electrical connection).
Fig. 7 A is the plane graph of existing commercial passive type ultrahigh frequency radio frequency identification chip, and this chip is Avery
The AD843 chip of Dennison company.Fig. 7 B is the schematic diagram of another embodiment of the present invention radio-frequency (RF) tag, and this label uses Fig. 7 A
In ultrahigh frequency radio frequency identification chip.Fig. 7 C is the close-up schematic view of Fig. 7 B.This passive type super high frequency radio frequency identification label
Including a RF identification chip 14 and a RFID antenna 15.This AD843 chip is provided with a breach 17, should
RF identification chip is electrically connected to the antenna of RFID tag by this breach.This commercialization passive type hyperfrequency in the present embodiment
RF identification chip linearly 16 carries out trimming, and this trimming process makes AD843 chip and two mutual spaced conducting islands
Shape part 20 separates, and RF identification chip 14 is electrically coupled to conduction island part 20 and is positioned on slit 18.Embodiment with Fig. 1
Similar, it is for the impedance with RF identification chip 14 that the first conductive layer 19 in this resonant circuit structure is provided with a slit
Coupling.Preferentially, the size of the trimming slit of the slit on the first conductive layer 19 and RFID tag (such as AD843 chip)
Identical.The electromagnetic energy that this resonant circuit structure receives will be transferred in this radio-frequency (RF) tag by Capacitance Coupled.
Fig. 8 A is the plane graph of existing commercial radio frequency identification tape.Fig. 8 B is the signal of another embodiment of the present invention radio-frequency (RF) tag
Figure, this label uses the super high frequency radio frequency identification tape in Fig. 8 A.Fig. 8 C is the close-up schematic view of Fig. 8 B.Refer to Fig. 8 A extremely
Fig. 8 C, this radio-frequency unit module is provided with RFID straps 21, and wherein RF identification chip 23 is electrically connected to two conductive pad 22.This reality
Executing in example, this radio-frequency unit module (such as RFID straps) is placed on the first conductive layer 24 near resonant circuit structure.
Under normal circumstances, the size of RFID straps is 3mm × 9mm, and it is always much smaller than resonant circuit structure, and its coupling electric capacity is less than
Radio-frequency unit module bigger in other embodiments.RF identification chip impedance on one side will change the biggest.This resonance circuit is tied
The resonant frequency of structure need to reduce so that with the matches impedances of RF identification chip.It should be noted that this resonant circuit structure
Impedance be:
Wherein, Z is surface impedance, and ω is the frequency of incident electromagnetic wave, and L is inductance, and C is capacitance.It is clear that
The optimized dimensions size of this resonance circuit is correlated with equivalent-circuit model, interrelated between each parameter.
The impact of different parameters when working in view of resonant circuit structure, is simulated not by a finite element simulation software
With the model of configuration at 920MHz(passive type ultrahigh frequency radio frequency identification chip in the operating frequency of China) work feelings under frequency
Condition.Impedance and the radiation gain of the resonant circuit structure of this simulation are all recorded.Fig. 9 A is resonant circuit structure in Fig. 1
The simulation schematic diagram that impedance changes with this resonant circuit structure thickness；Fig. 9 B be in Fig. 1 the radiation gain of resonant circuit structure with
The simulation schematic diagram of this resonant circuit structure thickness change.As can be seen from the table, when this resonant circuit structure thickness is more than 5mm
Time this impedance variation the biggest.
Fig. 9 C is the simulation signal that in Fig. 1, the impedance of resonant circuit structure changes with the slit sizes of this resonant circuit structure
Figure；Fig. 9 D is the simulation signal that in Fig. 1, the radiation gain of resonant circuit structure changes with the slit sizes of this resonant circuit structure
Figure.It is appreciated that first conductive layer with a slit can be considered an electric capacity.
When this slit sizes diminishes, it is humorous that increase and this resonant circuit structure are in low frequency by the electric capacity of this resonant circuit structure
Pattern of shaking works.Fig. 9 E be in Fig. 1 the impedance of resonant circuit structure with its radio-frequency unit along the slit side of this resonant circuit structure
To the simulation schematic diagram of change in location；Fig. 9 F be in Fig. 1 the radiation gain of resonant circuit structure with its radio-frequency unit along this resonance
The simulation schematic diagram of the slit direction change in location of circuit structure.Because the impedance of this resonant circuit structure depends primarily on it
Levy inductance and intrinsic capacity, and the impact that this resonant circuit structure is worked by the placement location of radio-frequency unit opposing slit is little.
Figure 10 A be in another embodiment of the present invention the impedance of radio-frequency (RF) tag with its radio-frequency unit module and resonant circuit structure
The simulation schematic diagram of spacing size variation；Figure 10 B be in another embodiment of the present invention the radiation gain of radio-frequency (RF) tag with its radio frequency
Apparatus module and the simulation schematic diagram of resonant circuit structure spacing size variation.Can be seen that radio-frequency unit module is by electric capacity coupling
Conjunction is connected to resonant circuit structure.Radio-frequency unit module will make impedance echo increase greatly with the change of resonant circuit structure spacing.Figure
10C be in another embodiment of the present invention the impedance of radio-frequency (RF) tag with the mould of the conductive seat portion change width of its resonant circuit structure
Intend schematic diagram；Figure 10 D is the radiation gain of radio-frequency (RF) tag at the bottom of with the conduction of its resonant circuit structure in another embodiment of the present invention
The simulation schematic diagram of seat portion change width.Can be seen that in the equivalent circuit diagram of this resonant circuit structure, resonant circuit structure
Intrinsic inductance and the width in two conductive seat portions have relation.Figure 10 E is the impedance of radio-frequency (RF) tag in another embodiment of the present invention
Simulation schematic diagram with the change width of its resonant circuit structure；Figure 10 F is the spoke of radio-frequency (RF) tag in another embodiment of the present invention
Penetrate the gain simulation schematic diagram with the change width of its resonant circuit structure.Owing to resonant circuit structure is generally excited by electric field,
Only lengthwise dimension has contribution to the mode of resonance of resonant circuit structure.The width of resonant circuit structure is to its resonant frequency
Impact less.But, when the width of resonant circuit structure reaches specific dimensions, resonant frequency will change, resonant circuit structure
Width resonant frequency will be produced large effect.Figure 10 A to Figure 10 F shows, when some parameter value example of resonant circuit structure
As when thickness and width cross-correlation, the work of this radio-frequency (RF) tag will improve.It is further known that, in the combination feelings using different parameters
Under condition, other values of resonant circuit structure parameter more will can improve the work of this radio-frequency (RF) tag.
Along with the conductive pad size of this radio-frequency unit module diminishes, transfer to the energy of radio-frequency unit module and by echo shadow
The impedance that pilot causes is lost coupling and will be reduced.When conductive pad size reduces to and levels off to zero, energy will not be had to transfer to radio frequency dress
Put module.
Some radio-frequency (RF) tag reader has directivity reading antenna, and this antenna can transmit linearly polarized electromagnetic wave, because of
This this label only has placement direction could normally work time consistent with this reader antenna direction.By using circular polarisation to read sky
Line or there is the problem that the radio-frequency (RF) tag in dual polarization direction can overcome directivity.Figure 11 is two radio frequency in another embodiment of the present invention
The schematic diagram of device 24,25, this two radio-frequency unit 24,25 is disposed vertically and is electrically connected to the first conductive layer of this resonance circuit
26.First conductive layer 26 is provided with two orthogonal slits, and the first conductive layer 26 is divided into four spaced island portions by it
Point.First conductive layer 26 is connected to the second conductive layer 261 by two conductive seat portions 27.Each radio-frequency unit is all electric with this resonance
Line structure matches.Each radio-frequency unit is excited generation radiation by a linearly polarized radio-frequency (RF) tag reading antenna.This phase
It is disposed vertically two radio-frequency (RF) tag after combination mutually to be excited by the incident radiation ripple of any polarised direction.
Another kind of dual polarization direction radio-frequency (RF) tag is to use radio-frequency unit 28, and it has two signal output parts, such as Figure 12
The passive type ultrahigh frequency radio frequency identification chip of shown Impinj ' s Monza company, it is a kind of in another embodiment of the present invention
Dual polarization direction radio-frequency (RF) tag.Radio-frequency unit 28 is electrically connected to the first conductive layer 261, and the first conductive layer 261 is divided by two slits
Become four orthogonal island part.First conductive layer 126 is connected to the second conductive layer 361 by two conductive seat portions 127.
The outfan of each radio-frequency unit mates with this resonant circuit structure.This is separated by 90 degree of two orthogonal radio-frequency (RF) tag outputs
The combination of end can be activated by the incident radiation of any polarised direction.
Figure 13 shows the resonant circuit structure of the RF identification chip being applicable to dual-port in another embodiment of the present invention
May setting.The electrical connection of this resonant circuit structure is configured with the RF identification chip 48 of a dual-port.This radio-frequency (RF) tag can
Go up in any direction and read by linearly polarized reader antenna.
Figure 14 is the schematic diagram of the radio-frequency (RF) tag having additional inner conducting layer 31 in another embodiment of the present invention, this inner conducting layer
31 for increasing the electric capacity of resonant circuit structure.This inner conducting layer 31 and first conductive layer the 30, second conductive layer 32 form one
Electric capacity, so will increase the electric capacity of resonant circuit structure and reduces the size of resonant circuit structure.
Figure 15 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.Compared to the embodiment shown in Figure 14, this reality
The inner conducting layer 33 executing example is connected to the second conductive layer 341 by two conductive components 34.This inner conducting layer 33 and first conductive layer
351 form an electric capacity.Slit 35 it also is provided with on inner conducting layer 33.
Below for alternative two embodiments with wideband operating frequency characteristics.Figure 16 is another enforcement of the present invention
The schematic diagram of radio-frequency (RF) tag in example, the first conductive layer 36 and the second non-parallel setting of conductive layer 37 in the present embodiment.Figure 17 is this
Invent the schematic diagram of radio-frequency (RF) tag in another embodiment, the wherein non-parallel setting in two conductive seat portions 38.
Figure 18 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.In the present embodiment, the first conductive layer connects to be had
Separating component 39, this separating component 39 can be inductively or capacitively.When this first conductive layer connects and has inductance, resonant circuit structure
The knots modification that changes with frequency of impedance will diminish.A visible wide frequency RF label is available.
Figure 19 A is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention；Figure 19 B is the another of radio-frequency (RF) tag in Figure 19 A
One schematic diagram.In the present embodiment, radio-frequency (RF) tag 47 is protected by a metal shell 45.This metal shell 45 is provided with two projections
46, two projections 46 of this metal shell arrange according to the direction being different from described radio-frequency (RF) tag polarised direction.
Figure 20 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.In the present embodiment, intrinsic inductance 40 shape
Become on the first conductive layer 140.Figure 21 illustrates another similar embodiment, and one of them intrinsic capacity 41 is formed at this radio frequency mark
On the first conductive layer 141 signed, it is similar to a separating component is connected to the first conductive layer.The impedance of resonant circuit structure
Knots modification with frequency change will be less, therefore available a kind of wide frequency RF label.
Figure 22 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention, and wherein the impedance of resonant circuit structure is at wideband
In frequency, variable quantity is less.In the present embodiment, the slit 42 on the first conductive layer 421 and the non-parallel setting in conductive seat portion 423.
One intrinsic inductance is formed on the first conductive layer 421 and the second conductive layer 425, and two conductive seat portions 423 are with the first conductive layer 421
On slit direction change and change.When this slit 42 is non-parallel be arranged at conductive seat portion 423 time, the resistance of resonant circuit structure
The anti-knots modification with frequency change will diminish.
Figure 23 is the schematic diagram of radio-frequency (RF) tag in another embodiment of the present invention.In the present embodiment, radio-frequency unit 44 electrically connects
In conductive seat portion 144, this conductive seat portion 144 is provided with a slit 43.In other words, if by leading in the present embodiment
If electricity base portion 144 regards the first conductive layer as, the size of the longest dimension of the first conductive layer 144 and the second conductive layer 146 is little
Size in the longest dimension in conductive seat portion 244.
It should be noted that the element that the specific embodiment of the present invention and claim are previously mentioned " couples " in another
Element, is not necessarily referring to that this element is fastened with another element, bolt is tight or other similar fixed forms.On the contrary, here " couple " and refer to this
Element is directly or indirectly connected to another element, or keeps telecommunication with another element.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that, for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the guarantor of the present invention
Protect scope.
Claims (8)
1. a radio-frequency (RF) tag, including resonant circuit structure and radio-frequency unit, it is characterised in that described resonant circuit structure bag
Include:
First conductive layer；
The second conductive layer arranged separately with described first conductive layer；And
It is connected to the two conductive seat portions at described first conductive layer and the second conductive layer two ends；
Wherein, described first conductive layer is provided with slit, and described radio-frequency unit is electrically coupled to described first conductive layer and is positioned at described
On slit；
Described radio-frequency (RF) tag also includes the 3rd conductive layer being located on described first conductive layer, described 3rd capacitor conductive layer coupling
In the first conductive layer and be electrically connected to described radio-frequency unit；Described 3rd conductive layer is divided into multiple interval by least one slit and sets
The island part put, and described radio-frequency unit is also located at least one slit described of described 3rd conductive layer.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described radio-frequency (RF) tag also includes being arranged at described first
Dielectric layer between conductive layer and the second conductive layer.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described radio-frequency unit is directly electrically connected to described first
Conductive layer.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that the impedance of described resonant circuit structure and described radio frequency
The impedance conjugate impedance match of device.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described first conductive layer is provided with at least one and adds
Slit, for launching the electromagnetic wave that polarization of ele direction launched from another slit is different.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described radio-frequency (RF) tag also includes that being located at described first leads
Inner conducting layer between electric layer and the second conductive layer.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described two conductive seat portions are arranged in parallel.
Radio-frequency (RF) tag the most according to claim 1, it is characterised in that described radio-frequency (RF) tag also includes being connected to described first
The separating component of conductive layer, described separating component is inductively or capacitively.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45683710P | 2010-11-15 | 2010-11-15 | |
| USUS61/456,837 | 2010-11-15 | ||
| US61/456,837 | 2010-11-15 | ||
| US13/008,030 US8439272B2 (en) | 2010-11-15 | 2011-01-18 | Resonant circuit structure and RF tag having same |
| USUS13/008,030 | 2011-01-18 | ||
| US13/008,030 | 2011-01-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102467675A CN102467675A (en) | 2012-05-23 |
| CN102467675B true CN102467675B (en) | 2016-12-14 |
Family
ID=
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202584176U (en) * | 2010-11-15 | 2012-12-05 | 新智飞科技有限公司 | Radio frequency label |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202584176U (en) * | 2010-11-15 | 2012-12-05 | 新智飞科技有限公司 | Radio frequency label |
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Effective date of registration: 20170316 Address after: 315000 Yinzhou District investment and entrepreneurship center, Zhejiang Jin Yuan Road, No. 669, No. Patentee after: ZHEJIANG LIXIN INFORMATION TECHNOLOGY CO., LTD. Address before: -4 Chinese in Guangdong province Shenzhen city Nanshan District high tech Industrial Park South Hing Road No. nine, a Hongkong Shenzhen building 4 room 415 Patentee before: Shenzhen Xin Fei Technology Co., Ltd. |
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| CB03 | Change of inventor or designer information |
Inventor after: Zhu Ruiqing Inventor after: Gao Bo Inventor before: Gao Bo |
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Address after: 315000 floor 1-4, east side of building F, 288 Jingu Middle Road (East), Yinzhou District, Ningbo City, Zhejiang Province Patentee after: Lixin Technology Co., Ltd Address before: 315000 Yinzhou District investment and entrepreneurship center, Zhejiang Jin Yuan Road, No. 669, No. Patentee before: ZHEJIANG LIXIN INFORMATION TECHNOLOGY CO., LTD. |