CN102456798B - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- CN102456798B CN102456798B CN201010510420.6A CN201010510420A CN102456798B CN 102456798 B CN102456798 B CN 102456798B CN 201010510420 A CN201010510420 A CN 201010510420A CN 102456798 B CN102456798 B CN 102456798B
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- CN
- China
- Prior art keywords
- light
- emitting diode
- pin
- luminescence chip
- insulating protective
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Abstract
The invention relates a light emitting diode. The light emitting diode comprises: a pedestal; a first pin, which is installed on the pedestal; a second pin, which is installed on the pedestal; a luminescent chip, which is electrically connected with the first pin and the second pin; and a packaging body, which is coated on the luminescent chip. The luminescent chip can emit ultraviolet lights; and an insulating protective film is covered on a region that is on the surface of the pedestal and is exposed in an irradiation range of the luminescent chip. According to the invention, the light emitting diode enables a pedestal to be effectively prevented from being yellowed and cracked.
Description
Technical field
The present invention relates to a kind of diode, refer to a kind of light-emitting diode especially.
Background technology
Light-emitting diode relies on its specular removal, low energy consumption, the advantage such as pollution-free, has been applied among increasing occasion, has greatly the trend replacing conventional light source.
Light-emitting diode is by adopting electric current to excite the mode of its luminescence chip to carry out luminescence.According to selected material, the chip of light-emitting diode can give off various corresponding visible ray and invisible light, and scope contains ultraviolet to infrared band.For ultra-violet light-emitting chip, its RGB (RGB) three-color phosphor of both can having arranged in pairs or groups makes for synthesize white light to throw light on, and also can be used alone to reach the objects such as sterilization, purification, detection, solidification.Therefore, the application of ultra-violet light-emitting chip is comparatively extensive.But because LED base is normally made up of plastic material, it is lower for ultraviolet patience, easily there is yellow embrittlement even after long-time irradiation, cause reduce the useful life of light-emitting diode.
Therefore, there is dealer to adopt and cover layer of metal film, to prevent ultraviolet from shining directly into base internal wall by the reflection of metallic film at the inwall of pedestal.But because metallic film has conductivity, it must separate with metal pins and cause to cover base internal wall completely.Further, due to processing procedure reason, the region of pedestal between positive and negative pin of light-emitting diode does not often have metallic film to cover yet.Therefore, pedestal still can be subject to ultraviolet irradiation by the region that metallic film covers and cause the problem of above-mentioned yellow and embrittlement to produce.
Summary of the invention
Therefore, the light-emitting diode that a kind of not easily yellow and embrittlement are provided is necessary.
A kind of light-emitting diode; comprise pedestal, be fixed on the first pin on pedestal and the second pin, be electrically connected the luminescence chip of the first pin and the second pin and cover the packaging body of luminescence chip; this luminescence chip can send ultraviolet light, and the surface coverage that pedestal is exposed in luminescence chip range of exposures has insulating protective film.
This light-emitting diode is protected pedestal owing to have employed insulating protective film, can not cover the base-plates surface being positioned at luminescence chip range of exposures, therefore can prevent ultraviolet from irradiating the problem of yellow and the embrittlement brought to pedestal by the impact of two pins.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Accompanying drawing explanation
Fig. 1 shows the profile of light-emitting diode of the present invention.
Fig. 2 shows the magnified partial view of light-emitting diode in Fig. 1.
Main element symbol description
| Pedestal | 10 |
| First pin | 20 |
| Wiring section | 22 |
| Contact-segment | 24 |
| Linkage section | 26 |
| Second pin | 30 |
| Wiring section | 32 |
| Contact-segment | 34 |
| Linkage section | 36 |
| Luminescence chip | 40 |
| Gold thread | 42 |
| Insulating protective film | 50 |
| First refractive layer | 52 |
| Second refracting layer | 54 |
| Packaging body | 60 |
| Fluorescent powder grain | 70 |
| Reflection grain | 80 |
Embodiment
Refer to Fig. 1, show light-emitting diode of the present invention.This light-emitting diode comprises a pedestal 10, is individually fixed in one first pin 20 of pedestal 10 opposite end and one second pin 30, the luminescence chip 40 be installed on the second pin 30, covers the insulating protective film 50 of pedestal 10 inner surface and cover the packaging body 60 of luminescence chip 40.
This pedestal 10 is made by plastics, and its end face is offered a groove (figure does not mark) and forms the sidewall 12 of a ring-type at an upper portion thereof.First pin 20 and the second pin 30 are made by metal material, and the two is inserted in the opposite end of pedestal 10 bottom respectively.First pin 20 and the second pin 30 are spaced from each other to avoid short circuit.First pin 20 and the second pin 30 include be positioned at pedestal 10 bottom surface contact-segment 24,34, be exposed to the wiring section 22,32 of bottom portion of groove and connect the linkage section 26,36 of contact-segment 24,34 and wiring section 22,32.This contact-segment 24,34 is for being connected electric energy input to be seted out in optical diode with the circuit structure (not shown) of outside.This wiring section 22,32 for being electrically connected with luminescence chip 40, to drive luminescence chip 40 luminous.This wiring section 22,32 is parallel to contact-segment 24,34 and perpendicular to linkage section 26,36.
This luminescence chip 40 is fixed on wiring section 32 surface of the second pin 30, and it is made by the semiconductor transformation such as gallium nitride, InGaN condensation material.Luminescence chip 40 upon power-up radiation-curable go out wavelength between the ultraviolet light of 190nm ~ 400nm.Luminescence chip 40 is connected to the wiring section 22,32 of the first pin 20 and the second pin 30 respectively to realize electrically conducting by two gold threads 42.Certainly, luminescence chip 40 also can adopt the mode of upside-down mounting (flip-chip) to be directly fixed on wiring section 22,32 surface of the first pin 20 and the second pin 30, and without the need to using gold thread 42.
See also this insulating protective film 50 of Fig. 2 and cover region in the whole side wall surface of groove and bottom surface between the first pin 20 and the second pin 30, pedestal 10 surface be namely directly exposed in luminescence chip 40 range of exposures all has insulating protective film 50 to cover.This insulating protective film 50 is a bragg reflection film (Distributed BraggReflector) made by the category of glass such as silicon dioxide, silicon nitride or ceramic-like materials, and it comprises multilayer first refractive layer 52 and the second refracting layer 54.The refractive index of first refractive layer 52 is greater than the refractive index of the second refracting layer 54.First refractive layer 52 and the second refracting layer 54 alternately laminated, and contact with pedestal 10 inner surface and be positioned at and be outmostly first refractive layer 52.The thickness of first refractive layer 52 and the second refracting layer 54 is λ/4 (λ is the ultraviolet wavelength that luminescence chip 40 sends), with the light enabling luminescence chip 40 be radiated on insulating protective film 50, Bragg reflection occurs.Via the reflection of bragg reflection film, luminescence chip 40 can be reflected back in groove effectively towards the ultraviolet light of pedestal 10 interior sidewall surface and bottom surface, thus promotes light utilization efficiency.And; due to the reflectivity of bragg reflection film higher (can more than 99% be reached); therefore only there is very small amount of Transmission light to cross bragg reflection film to arrive to pedestal 10 interior sidewall surface and bottom surface, thus guarantee that pedestal 10 can not cause yellow or embrittlement substantially by ultraviolet affects.
Packaging body 60 fills up groove is positioned at groove luminescence chip 40 with protection.Packaging body 60 is made by the transparent material such as Merlon or polymethyl methacrylate.Equably doped with fluorescent powder grain 70 in packaging body 60, to give off visible ray by exciting of ultraviolet light.This fluorescent powder grain 70 made by the fluorescent materials such as yttrium-aluminium-garnet, nitride, nitrogen oxide, silicate, can specifically depend on actual photochromic demand.
For promoting light utilization efficiency further, more ultraviolet light is enable to be irradiated on fluorescent powder grain 70, also doped with reflection grain 80 in packaging body 60.Reflection grain 80 can have the material of high reflectance to make for ultraviolet light by mica, titanium dioxide, zinc oxide etc., and its particle diameter is between 0.1 μm ~ 0.3 μm.By the reflection of reflection grain 80, can change originally without the light path of the ultraviolet light of fluorescent powder grain 70, make it have certain probability to be irradiated on fluorescent powder grain 70.Therefore, the light extraction efficiency of light-emitting diode is correspondingly improved.
In addition, it should be pointed out that the wavelength of ultraviolet light should be limited on 375nm when reflection grain 80 selects titanium dioxide as its material, to avoid inspiring the free radical of titanium dioxide and the problem causing reflecting effect to decline.
Claims (9)
1. a light-emitting diode, comprise plastic base, the first pin on mounting base and the second pin, the luminescence chip be electrically connected with the first pin and the second pin and the packaging body covering luminescence chip, luminescence chip can send ultraviolet light, it is characterized in that: region overlay base-plates surface is exposed in luminescence chip range of exposures has the insulating protective film for preventing pedestal to be subject to UV-irradiation and yellow or embrittlement, insulating protective film comprises the alternately laminated first refractive layer of multilayer and the second refracting layer, the refractive index of first refractive layer is greater than the refractive index of the second refracting layer, and contact with base inner surface and be positioned at and be outmostly first refractive layer.
2. light-emitting diode as claimed in claim 1, is characterized in that: this insulating protective film is bragg reflection film.
3. light-emitting diode as claimed in claim 1, is characterized in that: the thickness of first refractive layer and the second refracting layer is 1/4th of the wavelength that luminescence chip emits beam.
4. the light-emitting diode as described in any one of claims 1 to 3, is characterized in that: insulating protective film comprises the part between the first pin and the second pin.
5. light-emitting diode as claimed in claim 4, is characterized in that: pedestal offers the groove of a collecting luminescence chip, and packaging body is filled in groove.
6. light-emitting diode as claimed in claim 5, is characterized in that: insulating protective film comprises the part being positioned at groove interior sidewall surface.
7. the light-emitting diode as described in any one of claims 1 to 3, is characterized in that: doped with fluorescent powder grain in packaging body.
8. the light-emitting diode as described in any one of claims 1 to 3, is characterized in that: doped with reflection grain in packaging body, reflection grain is made up of titanium dioxide, mica or zinc oxide.
9. the light-emitting diode as described in any one of claims 1 to 3, is characterized in that: insulating protective layer is made by silicon dioxide or silicon nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010510420.6A CN102456798B (en) | 2010-10-20 | 2010-10-20 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010510420.6A CN102456798B (en) | 2010-10-20 | 2010-10-20 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102456798A CN102456798A (en) | 2012-05-16 |
| CN102456798B true CN102456798B (en) | 2015-01-07 |
Family
ID=46039717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010510420.6A Expired - Fee Related CN102456798B (en) | 2010-10-20 | 2010-10-20 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102456798B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004031732A1 (en) * | 2004-06-30 | 2006-01-19 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip with a beam-shaping element and beam-shaping element |
| KR100826426B1 (en) * | 2006-02-22 | 2008-04-29 | 삼성전기주식회사 | Light emitting diode package |
| KR20100079970A (en) * | 2008-12-31 | 2010-07-08 | 서울반도체 주식회사 | Light source package |
| CN102237466B (en) * | 2010-04-28 | 2013-11-06 | 展晶科技(深圳)有限公司 | Luminescent assembly encapsulation structure and manufacturing process thereof |
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2010
- 2010-10-20 CN CN201010510420.6A patent/CN102456798B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102456798A (en) | 2012-05-16 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 Termination date: 20201020 |
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| CF01 | Termination of patent right due to non-payment of annual fee |