CN102456541A - Preparation method of SiGe monitoring piece and method for employing piece to carry out monitoring - Google Patents
Preparation method of SiGe monitoring piece and method for employing piece to carry out monitoring Download PDFInfo
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- CN102456541A CN102456541A CN2010105114142A CN201010511414A CN102456541A CN 102456541 A CN102456541 A CN 102456541A CN 2010105114142 A CN2010105114142 A CN 2010105114142A CN 201010511414 A CN201010511414 A CN 201010511414A CN 102456541 A CN102456541 A CN 102456541A
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Abstract
The invention discloses a preparation method of an SiGe monitoring piece, and the SiGe monitoring piece is used for monitoring germanium content in an SiGe film. The method comprises the following steps: (1) designing at least a group of raster graphic; defining the raster graphic of step (1) on a substrate, and etching the substrate to form a raster graphic with step difference; (3) depositing an SiGe film with specific content on the substrate, and forming a SiGe film with the raster graphic. According to the SiGe monitoring piece prepared by employing the method in the invention, SiGe films with different Ge content have different reflection and diffraction intensity, thus monitoring of Ge content in the SiGe film can be visually carried out through detecting the reflection and diffraction intensity. The invention also discloses a method for employing the above prepared SiGe monitoring piece to carry out monitoring.
Description
Technical field
The present invention relates to a kind of preparation method of germanium silicon monitoring piece.The invention still further relates to a kind of method of monitoring germanium-silicon thin membrane.
Background technology
Si is one of topmost material of semiconductor device of present large-scale production, and it is easy that it has raw material preparing, and nature content is abundant, has fundamental characteristics such as characteristic of semiconductor and is used to prepare semiconductor device.
But use for high-frequency high-speed; The energy gap broad of Si, mobility of charge carrier speed is restricted, so people introduce the alloy that some other elements form Si usually and lower energy gap; Improve mobility of charge carrier speed, wherein Ge is one of most important and main material.Ge has the similar crystal structure with Si, forms alloy technique realization and matching height easily with Si, and the introducing of Ge simultaneously can reduce energy gap effectively, realizes the application of high speed device.While germanium silicon (Si
1-xGe
x) the alloy device be easy to carry out process integration with conventional Si device, so the germanium silicon device is that be in daily use a kind of is applied at a high speed and the device of HF communication.
The germanium silicon layer is mainly realized through epitaxial growth on the technology, and its main characterization parameter has thickness, Ge content and Ge distribution etc.Wherein the content of Ge what, directly determined the energy gap of germanium silicon material, therefore be unusual important technical parameters.
For the measurement of Ge content, two class methods are arranged usually.A kind of is through various rays or particle rete to be bombarded, and measures the component of sputter thing then and analyzes, such as SIMS (Fig. 1 are a SIMS measurement result sketch map) such as (secondary ion mass spectrometrys).This kind method precision is very high, but cost is also very high, and the production that all can't realize high yield is on a large scale still measured in the preparation of sample, therefore is widely used as a kind of scientific research method usually.Second class methods are to characterize (see figure 2) through the optical property of measuring germanium-silicon thin membrane, such as Raman spectrum, and reflection and transmission spectrum etc.Through demarcating Si, Ge and other element characteristic of correspondence wavelength, carry out the intensity that spectrum unscrambling obtains each composition characteristic of correspondence wavelength through numerical fitting then, demarcate the content of each element then.Its benefit is cheap, and sample preparation is easy, is easy to realize extensive high yield.But its defective also clearly: at first, spectrum unscrambling is not unique usually, and multiple possibility is arranged, and therefore extremely depends on spectrum unscrambling engineer's personal experience, and error is very big; Secondly, germanium-silicon thin membrane has very strong absorption coefficient, and property is made an uproar than very poor.Therefore the stability of the spectrum on its plane is bad, and simultaneously because strong absorption characteristic for the germanium-silicon thin membrane of different-thickness, does not have versatility, and error is with the very difficult control of the variation of thickness.Therefore these class methods are only used usually as a reference, not as the standard of directly judging.When being applied in the actual production, all need demarcate, separate analysis of spectrum, so actual effect is very undesirable for every kind of germanium-silicon thin membrane.
Summary of the invention
The technical problem that the present invention will solve provides a kind of preparation method of germanium silicon monitoring piece, and the germanium silicon monitoring piece that is provided can be monitored germanium-silicon thin membrane more accurately.
For solving the problems of the technologies described above, the preparation method of germanium silicon monitoring piece of the present invention comprises the steps:
1) designs one group of raster graphic at least;
2) raster graphic with step 1) is defined on the substrate, and the said substrate of etching forms the raster graphic with step difference;
3) germanium-silicon thin membrane that deposit has certain content on substrate, the germanium-silicon thin membrane of formation tool raster graphic.
The invention also discloses a kind of method of germanium-silicon thin membrane monitoring, comprise the steps:
1) gets the germanium silicon monitoring piece of at least one tool standard content, the germanium silicon monitoring piece of a tool standard content upper limit and the germanium silicon monitoring piece of a tool standard content lower limit;
2) the raster graphic district of germanium silicon monitoring piece in the probing light difference irradiating step one obtains reflection and difraction spectrum, obtains the reflection and the diffracted intensity of three kinds of content germanium silicon monitoring pieces respectively;
3) with the reflection that obtains in the step 2 and diffracted intensity as the monitoring standard, the germanium-silicon thin membrane that monitoring is generated with raster graphic.
Among the preparation method of germanium silicon monitoring piece of the present invention; Introduce the step difference notion, on substrate, form the germanium-silicon thin membrane raster graphic, thereby amplify the difference of optical reflectivity of the film of different Ge content; Suppress simultaneously because strong the absorption a little less than the spectral signal that brings receives the big weakness of noise effect.Adopt the prepared germanium silicon monitoring piece of method of the present invention, the germanium-silicon thin membrane of different Ge content has different reflections and diffracted intensity, therefore can carry out the monitoring of Ge content in the germanium-silicon thin membrane through detection of reflected and diffracted intensity intuitively.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is a SIMS measurement result sketch map;
Fig. 2 is the spectrum sketch map of plane germanium-silicon thin membrane;
Fig. 3 is a germanium silicon monitoring piece preparation flow sketch map of the present invention;
Fig. 4 is a method for supervising schematic flow sheet of the present invention;
Fig. 5 is the structural representation behind the formation raster graphic in the germanium silicon monitoring piece preparation flow of the present invention;
Fig. 6 is the structural representation behind the deposit germanium-silicon thin membrane in the germanium silicon monitoring piece preparation flow of the present invention;
Fig. 7 is for adopting the prepared concrete germanium silicon monitoring piece structural representation of germanium silicon monitoring piece preparation method of the present invention.
Embodiment
The preparation method of germanium silicon monitoring piece of the present invention, this germanium silicon monitoring piece is used to monitor the content of germanium-silicon thin membrane, comprises the steps (see figure 3):
1) designs one group of raster graphic at least; The space periodic of raster graphic can be 0.1～100 micron, is preferably 1～20 micron.
2) raster graphic with step 1 is defined on the substrate (can be silicon substrate), and etched substrate forms the raster graphic (see figure 5) that is made up of a plurality of regularly arranged grooves; Raster graphic can be regularly arranged bargraphs, and being etched in substrate is a plurality of regularly arranged groove figure, and the space periodic of groove figure is preferably less than surveying light wavelength.
3) germanium-silicon thin membrane that deposit has certain content on substrate, the germanium-silicon thin membrane (see figure 6) of formation tool raster graphic.
In the above-mentioned steps, dielectric layer deposited on substrate earlier also before the step 2, etching dielectric layer and substrate successively in etching technics; After etching is accomplished, dielectric layer can be do not removed, also dielectric layer can be removed.As do not remove dielectric layer, can directly adopt selective growth technology or non-selective growth technique deposit germanium-silicon thin membrane.Fig. 7 is for adopting the germanium silicon monitoring piece structural representation of selective growth technology deposit germanium-silicon thin membrane on the substrate of band dielectric layer.Dielectric layer is as the extension barrier layer of germanium silicon, and its refractive index is adjustable (like doping SiO2), then carries out etching and forms step, adopts selective epitaxial growth germanium silicon then, makes it on the barrier layer, not grow.Use this structure can further amplify the refractive index difference of the germanium-silicon thin membrane that causes by Ge content through the refractive index of adjustment dielectric layer.Dielectric layer is selected common material for use, like silica, silicon nitride or contain Si, and O, N, the compound of C etc. can be one deck, also can be multilayer.The thickness of dielectric layer is 10 dusts～1 micron.The etching depth of substrate can be 50 dusts～10 micron in the step 2, is preferably 2000～5000 dusts, and the trenched side-wall gradient of institute's etching is 70～88 degree.
The method that adopts the prepared monitoring piece of said method to monitor comprises the steps (see figure 4):
1) gets the germanium silicon monitoring piece of at least one tool standard content, the germanium silicon monitoring piece of a tool standard content upper limit and the germanium silicon monitoring piece of a tool standard content lower limit; As being the germanium-silicon thin membrane of 20%Ge content for desired value, the technology permissible range is positive and negative 1.5%, can prepare 18.5%, 20%, 21.5% monitoring piece.Can demarcate its content this moment with methods such as SIMS.
2) the raster graphic district of three kinds of germanium silicon monitoring pieces in the probing light difference irradiating step one obtains reflection and difraction spectrum, obtains the reflection and the diffracted intensity of three kinds of content germanium silicon monitoring pieces respectively.Detection optical wavelength is 100～10000 nanometers, is preferably 350～1000 nanometers.Surveying diffraction light progression is more than 1 grade, is preferably more than 5 grades.Detection optical wavelength is greater than the space periodic of raster graphic.
3) with the reflection that obtains in the step 2 and diffracted intensity as the monitoring standard, the germanium-silicon thin membrane that monitoring generates with raster graphic.Measured reflection and diffracted intensity are in standard the time, and the germanium-silicon thin membrane that is promptly generated meets the preparation requirement.As monitor very strictness of requirement, the shoulder height of raster graphic is preferably identical with the shoulder height of monitoring piece in the germanium-silicon thin membrane of being monitored.Generally speaking, the shoulder height to raster graphic does not have requirement for restriction.
Adopt the prepared germanium silicon monitoring piece of method of the present invention, through measuring the difraction spectrum and the reflectance spectrum of germanium silicon monitoring piece grating region, the higher contrast of germanium-silicon thin membrane on the comparison plane of can obtaining property making an uproar.Find that through overtesting 5% Ge content can cause specific progression diffraction light (like positive and negative diffraction light more than 5 grades) and reflectance spectrum intensity greater than 20% variation, and do not receive the influence of germanium-silicon thin membrane pattern of growth that the variation of Ge content is had very high susceptibility.Preparation and method of measurement are all easier simultaneously, can reduce the monitoring cost of semiconductor manufacturer to the germanium silicon technology significantly, improve the technology controlling and process ability.
Claims (10)
1. the preparation method of a germanium silicon monitoring piece, said germanium silicon monitoring piece is used for monitoring the content of the germanium of said germanium-silicon thin membrane, it is characterized in that, comprises the steps:
1) designs one group of raster graphic at least;
2) the described raster graphic of step 1) is defined on the substrate, and the said substrate formation of etching constitutes raster graphic by a plurality of regularly arranged grooves;
3) germanium-silicon thin membrane that deposit has certain content on said substrate forms tool raster graphic germanium-silicon thin membrane.
2. according to the described preparation method of claim 1, it is characterized in that: the space periodic of the raster graphic described in the step 1 is 0.1～100 micron.
3. according to the described preparation method of claim 2, it is characterized in that: dielectric layer deposited on substrate earlier before the step 2, and in etching etching dielectric layer and substrate successively; In step 3, adopt selective growth technology or non-selective growth technique deposit germanium-silicon thin membrane.
4. according to the described preparation method of claim 3, it is characterized in that: remove said dielectric layer after the etching of step 2 is accomplished.
5. according to the described preparation method of claim 3, it is characterized in that: said substrate is a silicon substrate, and said dielectric layer is silica or silicon nitride, and the thickness of said dielectric layer is 10 dusts～1 micron.
6. according to the described preparation method of each claim in the claim 1 to 5, it is characterized in that: the etching depth of substrate is 50 dusts～10 micron in the step 2, and the trenched side-wall gradient of institute's etching is 70～88 degree.
7. according to the described preparation method of claim 6, it is characterized in that: the etching depth of substrate is 2000～5000 dusts in the step 2.
8. one kind is adopted the method that the prepared germanium silicon monitoring piece of each claim is monitored in the claim 1 to 5, it is characterized in that, comprises the steps:
1) gets the germanium silicon monitoring piece of at least one tool standard content, the germanium silicon monitoring piece of a tool standard content upper limit and the germanium silicon monitoring piece of a tool standard content lower limit;
2) the raster graphic district of germanium silicon monitoring piece in the probing light difference irradiating step one obtains reflection and difraction spectrum, obtains the reflection and the diffracted intensity of three kinds of content germanium silicon monitoring pieces respectively;
3) with the reflection that obtains in the step 2 and diffracted intensity as the monitoring standard, the germanium-silicon thin membrane that monitoring is generated with raster graphic.
9. according to the described method of claim 8, it is characterized in that: the shoulder height of raster graphic is identical with the shoulder height of said monitoring piece in the germanium-silicon thin membrane of being monitored in the step 3).
10. according to claim 8 or 9 described methods, it is characterized in that: the wavelength of said probing light is 100～10000 nanometers, and surveying diffraction light progression is more than 1 grade.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020043662A1 (en) * | 2000-06-19 | 2002-04-18 | Shunpei Yamazaki | Semiconductor device |
| CN1558260A (en) * | 2004-01-14 | 2004-12-29 | 中国科学院上海微系统与信息技术研究 | Method for fabricating waveguide Prague grating based on ultraviolet light write through technology |
| US20040266145A1 (en) * | 2003-06-30 | 2004-12-30 | Mike Morse | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
| CN1918713A (en) * | 2004-02-24 | 2007-02-21 | 国际商业机器公司 | Structure for and method of fabricating a high-speed cmos-compatible ge-on-insulator photodetector |
| JP2009282322A (en) * | 2008-05-22 | 2009-12-03 | Konica Minolta Medical & Graphic Inc | Method of manufacturing amplitude type diffraction grating |
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2010
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020043662A1 (en) * | 2000-06-19 | 2002-04-18 | Shunpei Yamazaki | Semiconductor device |
| US20040266145A1 (en) * | 2003-06-30 | 2004-12-30 | Mike Morse | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
| CN1558260A (en) * | 2004-01-14 | 2004-12-29 | 中国科学院上海微系统与信息技术研究 | Method for fabricating waveguide Prague grating based on ultraviolet light write through technology |
| CN1918713A (en) * | 2004-02-24 | 2007-02-21 | 国际商业机器公司 | Structure for and method of fabricating a high-speed cmos-compatible ge-on-insulator photodetector |
| JP2009282322A (en) * | 2008-05-22 | 2009-12-03 | Konica Minolta Medical & Graphic Inc | Method of manufacturing amplitude type diffraction grating |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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Effective date of registration: 20140116 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |