CN102446684A - Structure of parallel beam limiting diaphragm based on ion implantation - Google Patents

Structure of parallel beam limiting diaphragm based on ion implantation Download PDF

Info

Publication number
CN102446684A
CN102446684A CN2010105134729A CN201010513472A CN102446684A CN 102446684 A CN102446684 A CN 102446684A CN 2010105134729 A CN2010105134729 A CN 2010105134729A CN 201010513472 A CN201010513472 A CN 201010513472A CN 102446684 A CN102446684 A CN 102446684A
Authority
CN
China
Prior art keywords
sliding axle
sliding shaft
diaphragm board
diaphragm plate
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010105134729A
Other languages
Chinese (zh)
Inventor
唐景庭
伍三忠
孙勇
曹远翔
刘世勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongkexin Electronic Equipment Co Ltd
Original Assignee
Beijing Zhongkexin Electronic Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Zhongkexin Electronic Equipment Co Ltd filed Critical Beijing Zhongkexin Electronic Equipment Co Ltd
Priority to CN2010105134729A priority Critical patent/CN102446684A/en
Publication of CN102446684A publication Critical patent/CN102446684A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a structure of a parallel beam limiting diaphragm based on ion implantation, which relates to an ion implanter and belongs to the field of semiconductor manufacturing. The structure comprises a vacuum chamber (1), an upper diaphragm plate (2), a lower diaphragm plate (3), a servo motor (4), a sliding shaft I (5) and a sliding shaft II (6), wherein the upper diaphragm plate (2) is arranged at the lower end of the sliding shaft I (5), the lower diaphragm plate (3) is arranged at the lower end of the sliding shaft II (6), and the upper ends of the sliding shaft I (5) and the sliding shaft II (6) are connected with the servo motor (4) so that the sliding shaft I (5) and the sliding shaft II (6) carry out uniform speed and opposite adjustment movement under the driving of the servo motor (4) so as to realize the size adjustment of the distance between the upper diaphragm plate (2) and the lower diaphragm plate (3). The upper diaphragm plate (2) and the lower diaphragm plate (3) are sawtooth-shaped, can endure the bombardment of high-power ion beams and have the edge sharpening effect possessed by diaphragms.

Description

A kind of structure of injecting parallel limit bundle light hurdle based on ion
Technical field
The present invention is a kind of novel high inclination-angle one chip ion implantor light path devices, and particularly semiconductor is made used ion implantor in the ion implantation technology, belongs to field of manufacturing semiconductor devices.
Background technology
Ion implantor is a requisite process equipment during the modern semiconductors integrated circuit is made.Semiconductor integrated circuit manufacturing process now to ion implantor require increasingly high.Not only whole aircraft reliability, line degree of purity, beam homogeneity, implant angle etc. are had higher requirement; And the ion energy scope of implanter, bundle shape of spot, beam transmission efficient etc. have also been proposed very high requirement, and to its technology and equipment require increasingly high.Particularly strict more to the requirement of implanter light path system.
In order to improve the quality of implanter particle beam, reduce ion sputtering effectively and pollute, obtain stable high accuracy ion beam, the present invention adopts a vertical direction apart from adjustable stop, is used to block the ion beam of parallel beam beyond the vertical direction certain limit.Diaphragm board is a sawtooth pattern up and down, and adopts high-purity high-density degree graphite material, can bear the bombardment of high-power ion beam, and have the due sharp edge effect in light hurdle.
Summary of the invention
Patent of the present invention is in the ion implantation process, and for blocking the ion beam of parallel beam beyond the vertical direction certain limit, the present invention realizes through following technical scheme:
A kind of ion injects limit bundle light hurdle and comprises: vacuum cavity (1), go up diaphragm board (2), diaphragm board (3), servomotor (4), sliding axle one (5), sliding axle two (6) down.Described vacuum cavity (1) is installed servomotor (4), and sliding axle one (5), sliding axle two (6) are passed in the relevant position perforate; Described sliding axle one (5), sliding axle two (6) upper ends connect servomotors (4), and the lower end connects diaphragm board (2), time diaphragm board (3) respectively; Described servomotor (4) connects sliding axle one (5), sliding axle two (6), can drive sliding axle one (5) simultaneously, sliding axle two (6) is done the opposite axial adjustment motion of constant speed; Described upward diaphragm board (2) is installed in the lower end of sliding axle one (5); Described diaphragm board (3) down is installed in the lower end of sliding axle two (6); The upper end of described sliding axle one (5) and sliding axle two (6) all links to each other with servomotor (4); Under the driving of servomotor (4), carry out the opposite adjustment movement of constant speed, the size adjustment of distance between diaphragm board in the realization (2) and the following diaphragm board (3).Last diaphragm board (2) and following diaphragm board (3) are sawtooth pattern, can bear the bombardment of high-power ion beam, and have the due sharp edge effect in light hurdle.
Main feature of the present invention is that sliding axle one (5) is made the opposite adjustment movement of constant speed, the size adjustment of distance between diaphragm board in the realization (2) and the following diaphragm board (3) with sliding axle (6) under same servomotor (4) drives.Ion beam is restrainted the light hurdle from an end through limit; The ion beam that parallel beam is in beyond the interstice coverage between diaphragm board (2) and the following diaphragm board (3) in vertical direction can be stopped; Only the ion beam in the interstice coverage passes through between last diaphragm board (2) of permission and the following diaphragm board (3); Effectively keep the stability of ion beam, obtain the high accuracy ion beam.
Description of drawings
Description of drawings embodiment of the present invention.In the drawings, identical Reference numeral is represented identical parts.
Fig. 1 is the sketch map of one embodiment of the present invention.
Specific embodiments:
Specific embodiment below in conjunction with accompanying drawing is done further introduction to the present invention, should be appreciated that, these descriptions all are illustrative, the invention is not restricted to this.Scope of the present invention is only limited the scope of accompanying claims.
Fig. 1 provides and a kind ofly injects the structure on parallel limit bundle light hurdle based on ion, comprising: vacuum cavity (1), go up diaphragm board (2), diaphragm board (3), servomotor (4), sliding axle one (5), sliding axle two (6) down.Described vacuum cavity (1) is installed servomotor (4), and sliding axle one (5), sliding axle two (6) are passed in the relevant position perforate; Described sliding axle one (5), sliding axle two (6) upper ends connect servomotors (4), and the lower end connects diaphragm board (2), time diaphragm board (3) respectively; Described servomotor (4) connects sliding axle one (5), sliding axle two (6), can drive sliding axle one (5) simultaneously, sliding axle two (6) is done the opposite axial adjustment motion of constant speed, and servo-drive can adopt coding site to detect, accurately the controlled motion regulated quantity; Described upward diaphragm board (2) is installed in the lower end of sliding axle one (5), and described diaphragm board (3) down is installed in the lower end of sliding axle two (6), and diaphragm board (2), following diaphragm board (3) can adopt high purity graphite to make, and reduces ion beam bombardment generation sputter and pollutes; The upper end of described sliding axle one (5) and sliding axle two (6) all links to each other with servomotor (4); Under the driving of servomotor (4), carry out the opposite adjustment movement of constant speed; The size adjustment of distance between diaphragm board in the realization (2) and the following diaphragm board (3); Design vacuum seal between sliding axle one (5), sliding axle two (6) and the vacuum cavity (1), overcome the influence of motion vacuum.Described upward diaphragm board (2) and following diaphragm board (3) are sawtooth pattern, can bear the bombardment of high-power ion beam, and have the due sharp edge effect in light hurdle.
The present invention can be at any time by demand to vertical direction up and down light hurdle distance effectively regulate; Make it can effectively stop the pollution of the outer ion beam of demand to light beam, the light hurdle is by same motor-driven up and down, and the light hurdle adopts the high purity graphite material to design and produce; Can bear the bombardment of high-power ion beam; Have the due sharp edge effect in light hurdle, long service life, reliability is high.
Specific embodiment of the present invention elaborates content of the present invention.As far as persons skilled in the art, any conspicuous change of under the prerequisite that does not deviate from spirit of the present invention, it being done, perhaps the direct replacement of customary means all constitutes the infringement to patent of the present invention, with corresponding legal responsibilities.

Claims (3)

1. one kind is injected the structure on parallel limit bundle light hurdle based on ion, and it is characterized in that: this structure comprises: vacuum cavity (1), go up diaphragm board (2), diaphragm board (3), servomotor (4), sliding axle one (5), sliding axle two (6) down.
2. as claimed in claim 1 a kind of based on parallel limit bundle light hurdle; The following diaphragm board (3) that it is characterized in that being installed in the last diaphragm board (2) of sliding axle one (5) lower end and be installed in sliding axle two (6) lower ends; Can under the driving of servomotor (4), do the opposite adjustment movement of constant speed, the size adjustment of distance between diaphragm board in the realization (2), the following diaphragm board (3);
3. as claimed in claim 1 a kind of based on parallel limit bundle light hurdle, it is characterized in that: upward diaphragm board (2), following diaphragm board (3) are sawtooth pattern, the bombardment that can bear high-power ion beam, and have the due sharp edge effect in light hurdle.
CN2010105134729A 2010-10-13 2010-10-13 Structure of parallel beam limiting diaphragm based on ion implantation Pending CN102446684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105134729A CN102446684A (en) 2010-10-13 2010-10-13 Structure of parallel beam limiting diaphragm based on ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105134729A CN102446684A (en) 2010-10-13 2010-10-13 Structure of parallel beam limiting diaphragm based on ion implantation

Publications (1)

Publication Number Publication Date
CN102446684A true CN102446684A (en) 2012-05-09

Family

ID=46009090

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105134729A Pending CN102446684A (en) 2010-10-13 2010-10-13 Structure of parallel beam limiting diaphragm based on ion implantation

Country Status (1)

Country Link
CN (1) CN102446684A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957794A (en) * 2016-02-19 2016-09-21 中国科学院等离子体物理研究所 Beam energy selection system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535470A (en) * 2001-01-18 2004-10-06 瓦里安半导体设备联合公司 Adjustable conductance limiting aperture for ion implanters
CN2779601Y (en) * 2005-03-31 2006-05-10 北京中科信电子装备有限公司 Rotatable light beam diaphragm apparatus
CN1988107A (en) * 2005-12-20 2007-06-27 日新意旺机械股份有限公司 Ion beam irradiating apparatus and method of adjusting uniformity of a beam

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1535470A (en) * 2001-01-18 2004-10-06 瓦里安半导体设备联合公司 Adjustable conductance limiting aperture for ion implanters
CN2779601Y (en) * 2005-03-31 2006-05-10 北京中科信电子装备有限公司 Rotatable light beam diaphragm apparatus
CN1988107A (en) * 2005-12-20 2007-06-27 日新意旺机械股份有限公司 Ion beam irradiating apparatus and method of adjusting uniformity of a beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957794A (en) * 2016-02-19 2016-09-21 中国科学院等离子体物理研究所 Beam energy selection system

Similar Documents

Publication Publication Date Title
US20050184254A1 (en) Ion implantation method and apparatus
CN202572363U (en) Heavy-duty semi-automatic accurate fine adjustment height adjusting mechanism
CN204866926U (en) Lead frame cross curvature controllability correcting unit
CN101530950B (en) Laser sintering machine based on nano hydroxyapatite and used for manufacturing absorptive artificial bone
CN107087340B (en) A kind of line for superconduction bevatron can dissipate governor motion
CN102446684A (en) Structure of parallel beam limiting diaphragm based on ion implantation
CN102237243B (en) Ion implantation system and method
CN1979749B (en) Uniform magnetic-field parallel beam lens system
CN102194636B (en) Ion implantation system and method
CN204295748U (en) A kind of bar hold down gag of bar cutting machine
US11485082B2 (en) Device capable of automatically replacing screen mechanism for light curing 3D printer
CN103105741B (en) Alignment compensation device and exposure device
CN206908933U (en) A kind of line for superconduction bevatron can dissipate governor motion
CN102446690B (en) Mechanical ion beam uniformity corrector
CN102102189A (en) Ion implantation system and method for improving beam current intensity and angle distribution
KR101028364B1 (en) The magnet source and the sputter system using the same
CN201499046U (en) Adjustment device for motor of oil pumping machine
CN208946658U (en) Facilitate the mold for realizing mode locking
JP4155327B2 (en) Ion implantation method and apparatus
CN109872938B (en) Ion implanter suitable for micronano device manufacturing
CN106945271A (en) Digital projection face 3D printing system, method, method of adjustment and device
CN208496140U (en) Welding adjusts device and string welding machine
CN105575750A (en) Uniformity adjustment device for high-resolution wide-beam ion implanter
CN106653533B (en) A kind of ion implantation apparatus of charged particle line magnetic field focusing structure and the application structure
CN201954402U (en) Road lamp with angle being adjustable vertically

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120509