CN1024232C - Humidity sensitive resistor and preparation method thereof - Google Patents
Humidity sensitive resistor and preparation method thereof Download PDFInfo
- Publication number
- CN1024232C CN1024232C CN 91105898 CN91105898A CN1024232C CN 1024232 C CN1024232 C CN 1024232C CN 91105898 CN91105898 CN 91105898 CN 91105898 A CN91105898 A CN 91105898A CN 1024232 C CN1024232 C CN 1024232C
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- China
- Prior art keywords
- humidity
- gold electrode
- sensing layer
- earthenware
- preparation
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- Expired - Fee Related
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010931 gold Substances 0.000 claims abstract description 10
- 229910052737 gold Inorganic materials 0.000 claims abstract description 10
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims abstract description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 22
- 230000001419 dependent effect Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 229910052571 earthenware Inorganic materials 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 claims description 3
- 239000001263 FEMA 3042 Substances 0.000 claims description 3
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 claims description 3
- 238000009835 boiling Methods 0.000 claims description 3
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- NJTGANWAUPEOAX-UHFFFAOYSA-N molport-023-220-454 Chemical compound OCC(O)CO.OCC(O)CO NJTGANWAUPEOAX-UHFFFAOYSA-N 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims description 3
- 229940033123 tannic acid Drugs 0.000 claims description 3
- 235000015523 tannic acid Nutrition 0.000 claims description 3
- 229920002258 tannic acid Polymers 0.000 claims description 3
- 238000004458 analytical method Methods 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000003085 diluting agent Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 230000001953 sensory effect Effects 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 239000000835 fiber Substances 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 239000004753 textile Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007791 dehumidification Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005251 gamma ray Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 1
- 230000032677 cell aging Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a humidity-sensitive resistor for measuring the humidity of a place and a preparation method thereof, which are characterized in that a humidity-sensitive layer on the surface of a ceramic substrate with a gold electrode contains 55-95 Mol% of analytically pure Si and Na2O20.1 to 30Mol% of CrO30.1 to 25Mol% of Ni2O3The sintered body consists of 0.1-15 Mol%, and the sintering temperature is 500-750 ℃. The device has the characteristics of small volume, short response time, quick dehumidification, small wet retardation, wide application and the like, and is simple to prepare and low in process condition requirement. The cost is low. The method can be used for monitoring the humidity change caused by leakage of water storage containers, pipelines and valves of nuclear power plants or chemical plants, and can also be used for forecasting the over-humidity of grains or the low humidity of textile chemical fiber products.
Description
The present invention relates to a kind of place humidity that is used to measure, humidity-dependent resistor of super wet or low humidity forecast and preparation method thereof.
At present, be used to measure the device of humidity except that general commonly used doing wet bubble hygrometer, the hair hygrograph, also have resistive moisture sensor, " clear 57-184203 " discloses a kind of humidity sensor as Japan Patent, and the prescription of its humidity sensing layer material is that ZnO is 30-69.95MOl%, Cr
2O
3Be 29.95～50Mol%, V
2O
5Be 0.05～10Mol%, Na
2O is 0.05～10Mol%, and its preparation method is to be 100～1200Kg/cm by weigh mixing, the back that stirs of proportioning at pressure with above-mentioned oxide
2Under be pressed into sheet, make at 1000 ℃～1400 ℃ sintering temperatures again.Its shortcoming is to need to carry out with press equipment pre-stamped in the preparation, and sintering temperature requires to be higher than 1000 ℃, so complex manufacturing, and process conditions require high, the production cost height.
The purpose of this invention is to provide humidity-dependent resistor that a kind of production technology is simple, sintering temperature is low, end properties is good and preparation method thereof.
The present invention is achieved in that a kind of humidity-dependent resistor that scribbles humidity sensing layer on the ceramic matrix surface with gold electrode, and its humidity sensing layer is to analyze pure silicon, to add the sintered body that sodium peroxide, chromium oxide and nickel sesquioxide are formed.The prescription of humidity sensing layer material is that the pure Si of analysis is 55～95Mol%, Na
2O
2Be 0.1～30Mol%, CrO
3Be 0.1～25Mol%, Ni
2O
3Be 0.1～15Mol%.
The preparation method of the said humidity-dependent resistor of the present invention adopts thin pulp coating sintering process, is that diluent wear into thin pulp by weigh preparation back of prescription with absolute alcohol with above-mentioned humidity sensing layer material, evenly be coated in the ceramic matrix surface of gold electrode, naturally cool to room temperature at 500 ℃～750 ℃ sintering temperatures after 0.5～6 hour with 100 ℃/hour heating rates.
For having suitable viscosity, the thin pulp shape humidity sensing layer material that grinding is obtained is convenient to coating, make the humidity sensing layer behind sintering have lower resistance, and certain intensity is arranged again, can in the humidity sensing layer batching, add the glycerol (glycerine) of 15～30wt% and make bonding agent, the tannic acid that adds 2-6wt% grinds as pore forming agent, and the amount of added absolute alcohol gets final product can form the thin pulp shape.The coating layer thickness of humidity sensing layer material is generally 50～200 μ m.Coating places element in the baking oven and to toast 1～6 hour under 90 ℃ of temperature in air behind the airing, carries out high temperature sintering again.
For improving the performance steady in a long-term of product, the element that sinters can be carried out burin-in process, the dew cell that is about to sinter placed 95 ℃ of steam boilings 30 minutes or was the alternating voltage by 1～2V 48 hours under 60～70%RH in relative humidity.
Compared with prior art, remarkable advantage of the present invention is that the humidity sensing layer material is ground to form rare slurry, and employing coating sintering process, sheeting process and required press equipment thereof have been saved in the centre, and sintering temperature is low, so preparation technology is simple, the process conditions requirement is low, greatly reduces production cost.And be framework material to analyze pure Si, add Na
2O
2Improve the bond strength between humidity sensing layer and the ceramic matrix, add CrO
3Can produce the Cr ion and improve the conductive capability of humidity sensing layer, add Ni
2O
3The resistance of element when reducing low humidity again, thus the stability of element in 30%～95%RH scope improved.
Now in conjunction with the accompanying drawings and embodiments the present invention is done and describes in further detail:
Fig. 1 is the humidity-dependent resistor structural representation;
Fig. 2 is that humidity-dependent resistor ambient humidity and resistance value concern schematic diagram;
Fig. 3 changes schematic diagram for the humidity-dependent resistor resistance value with ambient temperature and humidity;
Fig. 4 is humidity-dependent resistor response time and dehumidifying time relationship schematic diagram.
As shown in Figure 1, a kind of humidity-dependent resistor comprises that two ends are coated with the earthenware 4 and the humidity sensing layer 3 that is coated in earthenware 4 and broach shape gold electrode 5 surfaces of broach shape gold electrode 5 separated from one another, the gold electrode 5 at the two ends of earthenware 4 is provided with conduction end cap 2, soldering has contact conductor 1 on the end cap 2, and earthenware is of a size of φ 4 * 8.Humidity sensing layer 3 is to analyze pure Si, to add Na
2O
2, CrO
3And Ni
2O
2The sintered body of forming.The prescription of humidity sensing layer material, sintering temperature and the relative humidity that records and resistance value relation are as shown in Table 1 and Table 2.(table is seen the literary composition back)
Above-mentioned four samples adding glycerol (glycerine) are respectively 18wt%, 20wt%, 24wt%, 27wt% make bonding agent; The adding tannic acid is respectively 6wt%, 5wt%, 4wt%, 3wt% make pore forming agent; Humidity sensing layer material coating thickness is respectively 80 μ m, 120 μ m, 150 μ m, 180 μ m; Stoving time was respectively 2 hours, and 3 hours, 4 hours, 5 hours, sintering time was respectively 45 minutes, and 2 hours, 4 hours, 5 hours, dew cell ageing method, sample 1 and 2 sinter and were placed in 95 ℃ of steam boiling 30 minutes, pass to the 1-2V alternating voltage 48 hours after sample 3 and 4 sinters.
Humidity-dependent resistor provided by the present invention is simple in structure, volume is little, and (φ 3.5 * 10mm), and its resistance value changes greatly with ambient humidity, and when ambient humidity during from 40%RH～90%RH, its resistance value is then from 10
7Ohm～10
3Ohm (as shown in Figure 2); The humidity-dependent resistor resistance value with variation of ambient temperature as shown in Figure 3; Response time is short, rises to 90%RH from 55%RH, and the response time, dehumidifying speed was fast, drops to 60%RH from 90%RH less than 20 seconds, and required time is not more than 30 seconds (as shown in Figure 4); Humidity-dependent resistor does not in use need heating, can use repeatedly.Simultaneously, humidity-dependent resistor passes through burin-in process again, its long-term behaviour is stable, adopt brushing technique to make the humidity sensing layer thin thickness and evenly, humidity hysteresis is little, and humidity sensing layer adopts metal oxide gamma ray resistant irradiation, can use in the gamma-ray irradiation environment, contact conductor adopts soldering processes, can use in the environment more than 100 ℃.Because advantage in sum, so this humidity-dependent resistor and corresponding secondary meter cooperate, can be used to measure nuclear power station or chemical plant water container, pipeline, valve etc. and leak caused humidity variation, carry out the monitoring of equipment antiseep, also can be used for grain moisture too high (super wet) in the silo, or the forecast of textile chemical fiber product moisture low excessively (low humidity).
Claims (2)
1, a kind of humidity-dependent resistor, comprise that two ends are coated with the earthenware (4) of broach shape gold electrode (5) separated from one another and are coated in earthenware (4) and the wet sensory material layer (3) on broach shape gold electrode (5) surface, the gold electrode (5) at earthenware (4) two ends is provided with conduction end cap (2), end cap (2) is gone up soldering contact conductor (1), it is characterized in that the humidity sensing layer material is to analyze pure silicon, add sodium peroxide, the sintered body that chromium oxide and nickel sesquioxide are formed, the prescription of humidity sensing layer material are that the pure Si of analysis is 55～95Mol%, Na
2O
2Be 0.1～30Mol%, CrO
3Be 0.1～25Mol%, Ni
2O
3Be 0.1～15Mol%.
2, a kind of preparation method as the said humidity-dependent resistor of claim 1, it is characterized in that the humidity sensing layer material is made bonding agent by the prescription glycerol (glycerine) that preparation back adds 15～30wt% of weighing, the tannic acid that adds 2～6wt% is made pore forming agent, with absolute alcohol is that diluent is worn into thin pulp, evenly be coated in the surface of the earthenware of gold electrode, coating layer thickness is 50～200 μ m, coating is in air behind the airing, element placed in the baking oven under 90 ℃ of temperature, toasted 1～6 hour, naturally cool to room temperature at 500 ℃～750 ℃ sintering temperatures after 0.5～6 hour with 100 ℃/hour heating rate again, again dew cell is placed 95 ℃ of steam boilings 30 minutes, or be the alternating voltage 48 hours that passes to 1～2V under 60～70%RH condition in relative humidity, carry out burin-in process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91105898 CN1024232C (en) | 1991-08-27 | 1991-08-27 | Humidity sensitive resistor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91105898 CN1024232C (en) | 1991-08-27 | 1991-08-27 | Humidity sensitive resistor and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1069822A CN1069822A (en) | 1993-03-10 |
| CN1024232C true CN1024232C (en) | 1994-04-13 |
Family
ID=33759875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 91105898 Expired - Fee Related CN1024232C (en) | 1991-08-27 | 1991-08-27 | Humidity sensitive resistor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1024232C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040181B (en) * | 2004-10-18 | 2010-09-29 | 森迈帝克公司 | A humidity sensor and a method for manufacturing the same |
| CN104459043B (en) * | 2014-11-28 | 2016-02-03 | 苏州热工研究院有限公司 | The calibration steps of generator of nuclear power station hydrogen supply system moisture probe |
| CN107652603A (en) * | 2017-09-25 | 2018-02-02 | 南京航伽电子科技有限公司 | A kind of humidity transmitter that good linear change is presented |
-
1991
- 1991-08-27 CN CN 91105898 patent/CN1024232C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1069822A (en) | 1993-03-10 |
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