CN102420088A - 一种背栅极式可栅控冷阴极x射线管 - Google Patents
一种背栅极式可栅控冷阴极x射线管 Download PDFInfo
- Publication number
- CN102420088A CN102420088A CN2011103976619A CN201110397661A CN102420088A CN 102420088 A CN102420088 A CN 102420088A CN 2011103976619 A CN2011103976619 A CN 2011103976619A CN 201110397661 A CN201110397661 A CN 201110397661A CN 102420088 A CN102420088 A CN 102420088A
- Authority
- CN
- China
- Prior art keywords
- grid
- cathode
- anode
- substrate
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- 238000000605 extraction Methods 0.000 claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 6
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 230000000712 assembly Effects 0.000 claims description 9
- 238000000429 assembly Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 239000002086 nanomaterial Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- X-Ray Techniques (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110397661.9A CN102420088B (zh) | 2011-12-05 | 2011-12-05 | 一种背栅极式可栅控冷阴极x射线管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110397661.9A CN102420088B (zh) | 2011-12-05 | 2011-12-05 | 一种背栅极式可栅控冷阴极x射线管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102420088A true CN102420088A (zh) | 2012-04-18 |
CN102420088B CN102420088B (zh) | 2014-09-03 |
Family
ID=45944437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110397661.9A Expired - Fee Related CN102420088B (zh) | 2011-12-05 | 2011-12-05 | 一种背栅极式可栅控冷阴极x射线管 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102420088B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103413745A (zh) * | 2013-07-24 | 2013-11-27 | 南京康众光电科技有限公司 | 一种栅控冷阴极x射线管 |
CN103545160A (zh) * | 2012-07-17 | 2014-01-29 | 上海联影医疗科技有限公司 | 一种场发射管 |
TWI552187B (zh) * | 2014-11-20 | 2016-10-01 | 能資國際股份有限公司 | 冷陰極x射線產生器的封裝結構及其抽真空的方法 |
CN106683963A (zh) * | 2016-12-19 | 2017-05-17 | 中国科学院深圳先进技术研究院 | 一种图案化碳纳米管阴极的透射式x射线源结构 |
WO2019019042A1 (en) * | 2017-07-26 | 2019-01-31 | Shenzhen Xpectvision Technology Co., Ltd. | INTEGRATED X-RAY SOURCE |
CN111670484A (zh) * | 2018-01-31 | 2020-09-15 | 纳欧克斯影像有限责任公司 | 冷阴极型x射线管及其控制方法 |
CN114501758A (zh) * | 2022-01-11 | 2022-05-13 | 长春理工大学 | 一种高通量x射线源 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521135A (zh) * | 2009-03-26 | 2009-09-02 | 公安部第一研究所 | 栅控碳纳米阴极场发射x射线管 |
US20110116593A1 (en) * | 2009-11-13 | 2011-05-19 | General Electric Company | System and method for beam focusing and control in an indirectly heated cathode |
-
2011
- 2011-12-05 CN CN201110397661.9A patent/CN102420088B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101521135A (zh) * | 2009-03-26 | 2009-09-02 | 公安部第一研究所 | 栅控碳纳米阴极场发射x射线管 |
US20110116593A1 (en) * | 2009-11-13 | 2011-05-19 | General Electric Company | System and method for beam focusing and control in an indirectly heated cathode |
Non-Patent Citations (1)
Title |
---|
J.ZHANG AND G. YANG ET AL.: "stationary scanning x-ray source based on carbon nanotube field emitters", 《APPLIED PHYSICS LETTERS》 * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103545160A (zh) * | 2012-07-17 | 2014-01-29 | 上海联影医疗科技有限公司 | 一种场发射管 |
CN103545160B (zh) * | 2012-07-17 | 2016-04-27 | 上海联影医疗科技有限公司 | 一种场发射管 |
CN103413745A (zh) * | 2013-07-24 | 2013-11-27 | 南京康众光电科技有限公司 | 一种栅控冷阴极x射线管 |
CN103413745B (zh) * | 2013-07-24 | 2016-04-20 | 南京康众光电科技有限公司 | 一种栅控冷阴极x射线管 |
TWI552187B (zh) * | 2014-11-20 | 2016-10-01 | 能資國際股份有限公司 | 冷陰極x射線產生器的封裝結構及其抽真空的方法 |
CN106683963A (zh) * | 2016-12-19 | 2017-05-17 | 中国科学院深圳先进技术研究院 | 一种图案化碳纳米管阴极的透射式x射线源结构 |
WO2019019042A1 (en) * | 2017-07-26 | 2019-01-31 | Shenzhen Xpectvision Technology Co., Ltd. | INTEGRATED X-RAY SOURCE |
US11289300B2 (en) | 2017-07-26 | 2022-03-29 | Shenzhen Xpectvision Technology Co., Ltd. | Integrated X-ray source |
TWI788362B (zh) * | 2017-07-26 | 2023-01-01 | 中國大陸商深圳幀觀德芯科技有限公司 | 一體化x射線源和包括x射線源的系統及元素分析儀 |
CN111670484A (zh) * | 2018-01-31 | 2020-09-15 | 纳欧克斯影像有限责任公司 | 冷阴极型x射线管及其控制方法 |
CN114501758A (zh) * | 2022-01-11 | 2022-05-13 | 长春理工大学 | 一种高通量x射线源 |
Also Published As
Publication number | Publication date |
---|---|
CN102420088B (zh) | 2014-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102420088B (zh) | 一种背栅极式可栅控冷阴极x射线管 | |
US9865789B2 (en) | Device and method for thermoelectronic energy conversion | |
US9734980B2 (en) | Graphene serving as cathode of X-ray tube and X-ray tube thereof | |
KR101868009B1 (ko) | 전계 방출 엑스선원 및 이를 이용한 전자 빔 집속 방법 | |
KR102259859B1 (ko) | 이온 내충격성을 가진 전자 방출 구조물 | |
KR100789592B1 (ko) | 탄소나노튜브를 이용한 전계방출 냉음극 연엑스선 발생관 | |
JP2008181876A5 (zh) | ||
CN101521135B (zh) | 栅控碳纳米阴极场发射x射线管 | |
US20080267354A1 (en) | High-Dose X-Ray Tube | |
CN102427015A (zh) | 一种聚焦型冷阴极x射线管 | |
KR101701047B1 (ko) | 디지털 엑스레이 소스 | |
JP2010186694A (ja) | X線源、x線発生方法およびx線源製造方法。 | |
CN103413745B (zh) | 一种栅控冷阴极x射线管 | |
CN203644725U (zh) | 一种栅控冷阴极x射线管 | |
CN201378580Y (zh) | 栅控碳纳米阴极场发射x射线管 | |
KR102047436B1 (ko) | 엑스레이 소스유닛 및 이를 구비하는 엑스레이장치 | |
CN204516717U (zh) | 一种栅控冷阴极x射线管 | |
CN104538272B (zh) | 一种冷阴极x射线管阴极 | |
KR20210083040A (ko) | 엑스레이 튜브 | |
CN202332778U (zh) | 一种聚焦型冷阴极x射线管 | |
CN109473326A (zh) | 场发射电子源及其用途与真空电子器件及装置 | |
CN101834108B (zh) | 碳纳米阴极场发射x射线管 | |
CN204257584U (zh) | 一种冷阴极x射线管阴极 | |
KR102283035B1 (ko) | 전자빔 증폭형 초소형 엑스선 튜브 | |
CN105513929A (zh) | 一种碳纳米冷阴极x射线管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: ZHANG YAN Effective date: 20130521 Owner name: SHANGHAI KANGZHONG OPTOELECTRONIC TECHNOLOGY CO., Free format text: FORMER OWNER: LI CHI Effective date: 20130521 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 210096 NANJING, JIANGSU PROVINCE TO: 200000 YANGPU, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130521 Address after: 200000 room A102, exhibition hall, No. 11 Cathay Pacific Road, Shanghai, Yangpu District Applicant after: Shanghai Kangzhong Optoelectronic Technology Co., Ltd. Address before: 210096 Room 101, display technology research center, four arch 2, Nanjing, Jiangsu Applicant before: Li Chi Applicant before: Zhang Yan |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NANJING CAMRAY PHOTONICS CO., LTD. Free format text: FORMER OWNER: SHANGHAI KANGZHONG OPTOELECTRONIC TECHNOLOGY CO., LTD. Effective date: 20150330 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200000 YANGPU, SHANGHAI TO: 210000 NANJING, JIANGSU PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20150330 Address after: Qixia District of Nanjing City, Jiangsu province 210000 Xing Ke Lu No. 12 layer 101 branch base 1 Patentee after: CamRay Photonics Co., Ltd. Address before: 200000 room A102, exhibition hall, No. 11 Cathay Pacific Road, Shanghai, Yangpu District Patentee before: Shanghai Kangzhong Optoelectronic Technology Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140903 Termination date: 20191205 |
|
CF01 | Termination of patent right due to non-payment of annual fee |