CN102412319A - High-efficiency gallium arsenide solar cell manufactured on metal film and manufacturing method thereof - Google Patents

High-efficiency gallium arsenide solar cell manufactured on metal film and manufacturing method thereof Download PDF

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Publication number
CN102412319A
CN102412319A CN2011102954631A CN201110295463A CN102412319A CN 102412319 A CN102412319 A CN 102412319A CN 2011102954631 A CN2011102954631 A CN 2011102954631A CN 201110295463 A CN201110295463 A CN 201110295463A CN 102412319 A CN102412319 A CN 102412319A
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solar cell
gaas
metallic film
stainless steel
film
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CN2011102954631A
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陈聪茂
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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Abstract

The invention belongs to the field of energy, in particular to a high-efficiency gallium arsenide solar cell manufactured on a metal film and a manufacturing method thereof. The solar cell is characterized in that: a substrate of the solar cell consists of a stainless steel film and a tungsten, molybdenum or tantalum metal film which is sputtered on the surface of the stainless steel film; and certain photoelectric conversion interface layers are formed among a plurality of gallium arsenide material layers with different electrical properties which grow on the substrate in gas deposition way. The invention has the advantages: the metal film, in particular a stainless steel film is taken as the substrate, so that the cost is particularly low, and the material is tough and temperature-resistant, can be curled on an arbor wheel for transportation and can be stored for a long time; the electric property and photoelectric conversion rate are not influenced; in the depositing process, the attrition rate of a chemical gas material is low; the design and operation of solar cell procedure equipment are relatively simple; meanwhile, automation can be realized, and labor force is reduced; and a substrate material is readily available, so that the machining process is simplified, automatic control can be realized, the yield and quality are easy to increase, a large amount of energy consumption can be saved, the aim of reducing the emission of carbon dioxide is fulfilled, the emission of toxic tail gas which is harmful to the environment can be greatly reduced, and pollution to the environment is lowered.

Description

A kind of high-effect solar cell of GaAs that is produced on metallic film and preparation method thereof
  
Technical field
The invention belongs to energy field, be meant a kind of high-effect solar cell of GaAs on the metallic film and preparation method thereof that is produced on especially.
Background technology
The high-effect gallium arsenide solar cell of present existing tradition is the sunlight that is made into the interface absorption irradiation of N p type gallium arensidep material and P p type gallium arensidep material production at the GaAs substrate, and conversion producing into the solar cell of electric current output.
Because the substrate of GaAs (GaAs) is to make crystal bar by GaAs material through repeatedly refining, purge process and through the crystal pulling of high-temperature vacuum smelting furnace, the GaAs chip that becomes through section and twin polishing.
Traditional gallium arsenide solar cell substrate manufacture process is loaded down with trivial details, energy consumption is big, cost is high, frangible.
GaAs chip manufacture cost is very high; And thickness GaAs chip quality as thin as a wafer is frangible; Loss is very big in the process of manufacturing solar cells; And the gallium arsenide solar cell product cost extra-high-speed that is made into is high, and broken easily, can only on some precision instruments and space equipment, use.
At present existing another kind of conventional solar cell is to be that substrate manufacture becomes the interface of N type silicon materials and substrate silicon material production to absorb the sunlight of irradiation with monocrystalline silicon or polysilicon, converts the solar cell that electric current is exported to.
Traditional monocrystalline silicon polysilicon solar cell manufacture process is loaded down with trivial details, energy consumption is big, and finished product manufacturing process cost is high, and poor effect is polluted big and frangible.
Because also through repeatedly refining, purge process is also made crystal bar through the crystal pulling of high-temperature vacuum smelting furnace by silicon materials for the substrate of silicon, the silicon that becomes through section and twin polishing.Process is loaded down with trivial details, and processing cost is also very high, and quality is frangible, but the photoelectric conversion rate poor effect, and manufacturing process discharging waste gas waste water etc., influential to context unavoidably.
Summary of the invention
The objective of the invention is weak point according to above-mentioned prior art; A kind of high-effect solar cell of GaAs that is produced on metallic film and preparation method thereof is provided; This method plates graft material tungsten with the stainless steel film sputter; Molybdenum, or tantalum is made substrate replacement GaAs chip as substrate, mutual again deposit GaAs material layer realization improving the quality of products, practice thrift cost, the purpose that manufacturing process is easy.
The object of the invention is realized being accomplished by following technical scheme:
A kind of high-effect solar cell of GaAs that uses metallic film; The substrate that it is characterized in that said solar cell is to add sputter plating tungsten by stainless steel film; Molybdenum; Or tantalum constitutes the electrical different material layer of mutual deposit N p type gallium arensidep material and P p type gallium arensidep material on said substrate as the graft material layer.
Said Thin Stainless Steel film thickness with 0.26mm for meet most economic principle also the cutting of the most suitable finished product solar panel use.
A kind of manufacture method that is produced on the high-effect solar cell of GaAs of metallic film; It is characterized in that said manufacture method comprises following step: surface sputtering was plated tungsten; Molybdenum or tantalum as the stainless steel metal film of graft material as baseplate material; Be docile and obedient that preface will be mixed through the N type with the mode of chemical vapor deposition and the P type mixes gas material in vacuum chamber; But two kinds of electrical materials of deposit simultaneously, necessary separation is clear, and the N p type gallium arensidep material that mutual deposit is electrically different and the material layer of P p type gallium arensidep material are to produce the interface layer between several electrically different materials.
The number of plies of said material layer is that four layers of different electricity layer interface are three.
Said material layer thickness is 1000-1500A O
The grafting between said metallic film and the GaAs material or the chovring material bed of material be with tungsten, molybdenum, or the thin metal layer of tantalum is good, described thickness of thin layer is 500-800A O
The invention is to replace expensive GaAs chip as baseplate material with the cheap metallic film of material cost (especially stainless steel film); In vacuum chamber; With through the mode that the N type mixes and the P type mixes chemical vapor deposition, with N p type gallium arensidep gas and P p type gallium arensidep gas, mutual deposit is grown up on the substrate of metallic film; Produce mutual electrical different material layer interface; Just produce the several layers of sunlight that can absorb irradiation, conversion produces into the different electric matter interface layer of electric current, to produce the metallic film gallium arsenide solar cell of electric current output.
Advantage of the present invention is: one, with the very cheap metallic film of cost particularly with stainless steel film (thickness 0.26mm, stainless sheet steel 3.2m 2Area, weight just have 1 kilogram, average every square chi less than 5 fens dollar costs) replace very expensive GaAs chip as baseplate material (diameter 2 English inch GaAs chips/120 dollars), reduce production costs greatly;
Two, metallic film; Stainless steel film particularly, the tough heatproof of material is with respect to GaAs chip frangible in the prior art; Stainless steel film is cracky not; And the metallic film gallium arsenide solar cell deflection of making can be curled in arbor wheel, and transportation all never influences its electrical and photoelectric conversion rate with long-time the storage;
Three, owing to replace frangible GaAs chip with firm tough metallic film, in chemical gas deposit processing procedure process, the substrate material proportion of goods damageds are special few; Because it is big to accept the scope area of deposit, the chemical gas waste of material is few;
Four, owing to need GaAs chip through multiple exaltation with simple metallic film replacement; Save the process of multiple exaltation; Can save huge energy consumption and reach the purpose of reducing emission of carbon dioxide, can reduce the poisonous exhaust emissions of hostile environment greatly, reduce pollution environment;
Five, owing to replace frangible GaAs chip with firm tough metallic film, in the design and the operation of solar cell process apparatus, relative trend is simple and easy, but automation simultaneously reduces artificial;
Six, because baseplate material is obtained easily, and the course of processing is simplified, can automation control again, output and quality is easy to promote.
Description of drawings
Fig. 1 is metallic film gallium arsenide solar cell cross-sectional configuration figure of the present invention;
Fig. 2 is a chemical vapor deposition active zone sketch map of the present invention;
Fig. 3 is that traditional GaAs is the chemical vapor deposition active zone sketch map of chip;
Fig. 4 is a quality sketch map of the present invention.
Embodiment
Below combine accompanying drawing that inventive features and other correlated characteristic are done further explain through embodiment so that technical staff's of the same trade understanding:
Shown in Fig. 1-5, label 1-12 representes respectively: the generating framework 12 that metallic film gallium arsenide solar cell 11, metallic film gallium arsenide solar cell sheet and the conventional solar cell sheet of p type gaas layer 1, blue light absorption interface layer 2, n type gaas layer 3, green glow absorption interface layer 4, p type gaas layer 5, red light absorption interface layer 6, n type gaas layer 7, grafting (switching) material layer 8, stainless steel film 9, metallic film base material heating platform 9-1, metallic film deposit active zone (gross area) 10, traditional GaAs solar energy deposit active zone (GaAs chip) 10-1, the collection of curling all can make.
Stainless steel film 9 be can be high temperature resistant metal, the low durable again Tibetan of cost price is difficult for oxidation, thickness 0.26mm, stainless steel film 9, surface with the mode of vacuum sputtering coating, the grafting that the sputter last layer is very thin (switching) material layer 8, thickness is 500-800A OThis layer material film 8 can be selected any one metal in tungsten or molybdenum or the tantalum etc.; The adhesive force of the stainless steel film 9 that this metal material layer inboard is metal equally is very good, will grow up several layers of gallium arsenide film getting on because atomic order is close with CVD method (CVD) for the follow-up of the outside, and the fewer difference row's of atomic arrangement phenomenon takes place; So atomic lattice is arranged good, gallium arsenide film is grown up good.
The stainless steel film 9 that plates tungsten or molybdenum or tantalum graft material layer 8 with the sputter above that of above-mentioned method is as baseplate material; The N type mixes and the P type mixes gas to pass through in vacuum chamber to be docile and obedient preface; With the mode of chemical gas vapor deposition,, comprise p type gaas layer 1, n type gaas layer 3, p type gaas layer 5, n type gaas layer 7 with N p type gallium arensidep material and the electrical different material layer of P p type gallium arensidep material; Mutual deposit is grown up on the substrate of metallic film; Produce three different electrical interfaces, comprise that blue light absorption interface layer 2, green glow absorb interface layer 4, red light absorption interface layer 6, every layer thickness is about 1000-1500A O, just the several layers of sunlight that can absorb irradiation are changed the interface layer that produces into electric current, to produce the metallic film gallium arsenide solar cell 11 of electric current output.
The different electrical interface that a plurality of mutual deposits are grown up and produced; Each interface layer all can absorb sunlight and convert electric current to, but the electric current of each interface layer output can reduce because of the aspect number more, and ordinary circumstance exceeds after the 3rd interface layer; Because it is few to arrive the light of bottom effect thoroughly; The electric current that increases output is few, and the deposited cost of making this interface layer material of the electric current that increases, so be main to make three interface layer generally.
As shown in Figure 3; Because growing up, traditional deposit all only is deposited on 2 inch or the 4 inch GaAs chips at N p type gallium arensidep material on the GaAs chip and P p type gallium arensidep material; Deposit active zone 10-1 area is limited, and the material that is deposited on beyond the chip all belongs to the waste that does not have effect, and as shown in Figure 2; It all is the scope that effective deposit is grown up on the vast metallic film of area that the present embodiment deposit is grown up, and just to make deposit active zone 10 areas big for the metallic film gallium arsenide solar cell.
Because metallic film material is firm, tough, and flexiblely be not easy breakage; The metallic film gallium arsenide solar cell 11 of working it out also has flexible difficult fragmentation; Can be crimped onto on the epithelium take-up spool of certain external diameter, as shown in Figure 4, volume is little; The convenient storage transported, and do not lower it and electrically reaches photoelectric conversion rate.
Because metallic film conductivity is good, be that the good conductor of electricity can directly be gone out the conduction of current of output, be semiconductor unlike traditional monocrystalline silicon polysilicon base material, conduct electricity badly, must solar cell institute output electric current be guided away wire mark conductive silver paste line.
Metallic film gallium arsenide solar cell 11 can be cut into strip, sheet; Transparent polymeric glued membrane close and protect in addition; Can put the roof all the year round; Seabeach or framework use as solar generator, if with the same folder up and down of conventional solar cell with transparent safety glass as the generating framework, can guarantee and not damage in 20 years.
The present invention has following characteristics in the specific implementation:
One, with sputter tungsten, molybdenum, or tantalum metal films comes the method between grafting semi-conducting material and the metal material.
With the mode of vacuum sputtering coating, the metal that sputter last layer atomic molar ratio is bigger, tungsten for example, molybdenum, or very thin material such as tantalum is on metallic film, like stainless steel film, with the growth of grafting semi-conducting material on metallic film.Because GaAs material atomic number and tungsten, molybdenum, tantalum are close; And the phenomenon that becomes the longer fewer difference of GaAs atomic arrangement to arrange on this basis takes place; The growth atomic lattice is arranged good, with sputtered tungsten, molybdenum, tantalum metal layer as graft material transfer metal and semi-conducting material.
Two, with method growth GaAs silicon and other semi-conducting material on metallic film of chemical vapor deposition.
Three, in the method for growth gallium arsenide solar cell on the metallic film: to plate tungsten or molybdenum or tantalum layer be baseplate material as graft material in sputter on metallic film; The N type mixes and the P type mixes gas to pass through in vacuum chamber to be docile and obedient preface; Mode with the chemical gas vapor deposition; With N p type gallium arensidep material and the electrical different material layer of P p type gallium arensidep material, it is being on the substrate with the metallic film that mutual deposit is grown up, and it is different to produce several layers of electrical different material layer
Electrically the interface layer between the material just several layers can absorb sunlight, convert the face that connects of electric current to, to produce the metallic film gallium arsenide solar cell of electric current output.
Four, utilize the satisfactory electrical conductivity of metallic film with metallic film simultaneously as base material, as the lead that solar cell is transmitted cathodal current.

Claims (5)

1. high-effect solar cell of GaAs that is produced on metallic film; It is characterized in that: said solar cell is the tungsten that is plated on the stainless steel film surface with sputter; Molybdenum, or the thin layer of tantalum constitutes with the mutual subsequently electrical GaAs material layer of the superincumbent difference of deposit of grafting as graft material.
2. a kind of high-effect solar cell of GaAs that is produced on metallic film according to claim 1 is characterized in that, uses sputter to be plated on the tungsten of metallic film, and molybdenum, or layer material such as tantalum are as the graft material of stainless steel film and semi-conducting material.
3. a kind of high-effect solar cell of GaAs that is produced on metallic film according to claim 1; It is characterized in that; Said solar cell is for the N p type gallium arensidep material that is produced on stainless steel film with mutual deposit is the high-effect solar cell of electric energy with the different surface layer that electrically connects of P p type gallium arensidep material as changing luminous energy, is deposited on the N p type gallium arensidep material of stainless steel film and several layers of different electrical interface that P p type gallium arensidep material the is produced solar cell as the opto-electronic conversion mode alternately.
4. manufacture method that is produced on the high-effect solar cell of GaAs on the metallic film; It is characterized in that said manufacture method comprises following step: surface sputter is plated tungsten; Molybdenum; Or the stainless steel metal film of graft material layer such as tantalum is as baseplate material, be docile and obedient preface in vacuum chamber to mix through the N type and the P type mixes gas, with the mode of chemical gas vapor deposition; N p type gallium arensidep material that mutual making is electrically different and P p type gallium arensidep material are on the metallic film substrate, thereby generation is by at least three different electric matter interface layer.
5. a kind of manufacture method that is produced on the high-effect solar cell of GaAs of metallic film according to claim 4 is characterized in that: said method utilization is produced on the interface layer row opto-electronic conversion between the different electrical material of GaAs on the metallic film.
CN2011102954631A 2011-09-30 2011-09-30 High-efficiency gallium arsenide solar cell manufactured on metal film and manufacturing method thereof Pending CN102412319A (en)

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Application Number Priority Date Filing Date Title
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US20090269877A1 (en) * 2008-04-28 2009-10-29 Mustafa Pinarbasi Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20100083999A1 (en) * 2008-10-01 2010-04-08 International Business Machines Corporation Tandem nanofilm solar cells joined by wafer bonding
CN102017127A (en) * 2008-03-06 2011-04-13 阿米特·戈亚尔 Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
CN102017127A (en) * 2008-03-06 2011-04-13 阿米特·戈亚尔 Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates
US20090269877A1 (en) * 2008-04-28 2009-10-29 Mustafa Pinarbasi Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20100083999A1 (en) * 2008-10-01 2010-04-08 International Business Machines Corporation Tandem nanofilm solar cells joined by wafer bonding

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Application publication date: 20120411