CN102400223A - Laser host crystal material, and preparation method and application thereof - Google Patents

Laser host crystal material, and preparation method and application thereof Download PDF

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CN102400223A
CN102400223A CN2011103509895A CN201110350989A CN102400223A CN 102400223 A CN102400223 A CN 102400223A CN 2011103509895 A CN2011103509895 A CN 2011103509895A CN 201110350989 A CN201110350989 A CN 201110350989A CN 102400223 A CN102400223 A CN 102400223A
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crystalline material
laser
laser host
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crystal
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CN102400223B (en
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徐军
郑丽和
王庆国
苏良碧
李红军
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Shanghai de si Kai fluorine Photoelectric Technology Co.,Ltd.
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Shanghai Institute of Ceramics of CAS
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Abstract

The invention discloses a laser host crystal material, and a preparation method and application thereof. The crystal material has a general formula as (ScxY1-x)2SiO5, wherein x satisfies a relation of 0<x<1. The preparation method of the crystal material comprises the following steps: first, weighing components according to a stoichiometric ratio, mixing well and compacting for molding, then calcining; and employing a czochralski method to carry out crystal growth. The laser host crystal material provided by the invention has negative refractive index temperature coefficient, can effectively solve a defect of thermal lens effect of an existing laser host crystal material, has excellent thermodynamic performance, and can be applied to preparation of a laser diode or pumped wavelength tunable or super burst pulse all solid state laser. In addition, the preparation method of the invention is simple and with a short preparation period, uses cheap and easily available raw materials, needs no special equipment, and is suitable for large scale production.

Description

A kind of laser host crystalline material
Technical field
The present invention relates to a kind of laser host crystalline material, specifically, relate to a kind of laser host crystalline material with specific refractory power NTC, belong to the photovaltaic material technical field.
Background technology
The laser host crystalline material is the core and the basis of laser technology development, has all play a part very important at each critical stage of laser technology development: the sixties in 20th century first ruby (Cr:Al 2O 3) the crystal laser appearance, laser is born; The neodymium-doped yttrium-aluminum garnet seventies (Nd:YAG) crystal comes out, and makes Solid State Laser begin to greatly develop; The eighties titanium-doped sapphire (Ti:Al 2O 3) crystal comes out, and makes ultrashort, ultrafast and ultra-intense laser becomes possibility, femtosecond (fs) laser technology is flourish and be penetrated into each basic and applied research field; The nineties Nd-doped yttrium vanadate (Nd:YVO 4) crystal comes out, make the development of Solid State Laser get into the new period-the all-solid state laser technology; Get into 21 century, laser host material fast development aspect monocrystalline, glass, optical fiber, pottery etc. 4.New ideas, new technologies such as " thermal capacitance " laser, " ultrafast " laser also continue to bring out, and " fluid ", " nanometer ", " organic ", " photonic crystal " laser etc. face breakthrough, receive the great attention of national governments, scientific circles and even business circles.
At present, known laser host crystalline material comprises: aluminate serial, vannadate series; Silicate crystal series, tungstate series, oxide crystal series; Halide crystal series, semiconductor die series etc. reaches tens of kinds, but with regard to its range of application and range; Yttrium aluminum garnet (YAG), vanadic acid yttrium (YVO 4), sapphire (Al 2O 3) be most prestigious laser host crystal, they have brought up " three big basic laser crystalss ": neodymium yttrium aluminium garnet (Nd:YAG) crystal-middle and high power laser; Nd-doped yttrium vanadate (Nd:YVO4) crystal-low power miniaturized laser; Titanium-doped sapphire (Ti:Al 2O 3) crystal-tunable, ultrafast laser.
But, yttrium aluminum garnet (YAG), vanadic acid yttrium (YVO 4) wait crystal because the positive thermal refractive index coefficient of itself; In the laser output procedure, there is serious thermal lensing effect; The many aspects of laser activity have all been produced seriously influenced; Like the stability of resonator cavity, chamber mould size, Mode Coupling rate, output beam quality etc., when serious even can cause crystal to break; Therefore; Eliminating thermal lensing effect becomes a research emphasis of laser technology development; Various compensation systems and equalising means have been carried (CN200410025705, CN200510094465, CN200810051540, CN03106472 etc.); But can not fundamentally eliminate the thermal lensing effect of laser crystals, seek a kind of laser host crystalline material and be only the key of dealing with problems with negative index temperature factor.
Summary of the invention
To existing in prior technology the problems referred to above and demand; The purpose of this invention is to provide a kind of laser host crystalline material with negative index temperature factor, to solve the defect problem of the thermal lensing effect that existing laser host crystalline material exists.
For realizing the foregoing invention problem, the technical scheme that the present invention adopts is following:
Laser host crystalline material provided by the invention has following general formula: (Sc xY 1-x) 2SiO 5, 0＜x＜1 wherein.
As preferred version, be doped with trivalent rare earth ions in the described laser host crystalline material.
As further preferred version, be doped with the trivalent rare earth ions of 0.5～2.0at.% in the described laser host crystalline material.
Described trivalent rare earth ions is selected from Yb 3+, Nd 3+, Er 3+, Tm 3+, Ho 3+In any one or a few combination.
A kind of preparation method of described laser host crystalline material comprises the steps:
A) take by weighing each component according to stoichiometric ratio, mix and compression moulding, calcine then;
B) adopt crystal pulling method to carry out crystal growth.
Described each component is the oxide compound of each element of containing.
Described calcination condition was recommended as: 1200～1600 ℃ of calcinings 10～20 hours.
The condition that adopts crystal pulling method to carry out crystal growth is recommended as: use iraurite (Ir) crucible, adopt<010>Direction Y 2SiO 5(YSO) crystal is a seed crystal, and growth atmosphere is N 2, air pressure is at 0.02～0.06Mpa; The raw materials melt temperature is 1900～2000 ℃, and the crystal pull rate is 0.5～2.0mm/h, and changeing brilliant speed is 15～20rpm, grows and reduces to room temperature with the rate of temperature fall of 0.5～1.0 ℃/min after 10～20 hours.
Because laser host crystalline material provided by the invention has the negative index temperature factor; Can eliminate the thermal lensing effect in the laser output procedure; The broad-band illumination that helps active ions; Therefore, described laser host crystalline material can be applicable to prepare the tunable wave length of laser diode (LD) or pumping or all solid state laser of ultrashort pulse.
Compared with prior art; Laser host crystalline material provided by the invention has the negative index temperature factor; Can effectively solve the defect problem of the thermal lensing effect of existing laser host crystalline material existence; And have good thermomechanical property, can be applicable to prepare the tunable wave length of laser diode (LD) or pumping or all solid state laser of ultrashort pulse; In addition, preparation method of the present invention is simple, and preparation cycle is short, and the raw material of use is cheap and easy to get, and need not specific installation, is fit to large-scale production, has industrial application value.
Description of drawings
Fig. 1 is the 4at.%Tm that embodiment 1 makes 3+: (Sc 0.5Y 0.5) 2SiO 5The XRD spectra of crystalline material;
Fig. 2 is the 4at.%Tm that embodiment 1 makes 3+: (Sc 0.5Y 0.5) 2SiO 5Crystalline material is in the room temperature abosrption spectrogram of 200～2000nm wave band;
Fig. 3 is the 4at.%Tm that embodiment 1 makes 3+: (Sc 0.5Y 0.5) 2SiO 5The room temperature emmission spectrum figure that crystalline material is excited by 808nm laser diode (LD) at 1500～2200nm wave band.
Embodiment
Below in conjunction with embodiment and accompanying drawing to the present invention do further in detail, intactly explanation.
Embodiment 1
Take by weighing Tm according to stoichiometric ratio 2O 324.93 gram, Sc 2O 3106.90 gram, Y 2O 3175.03 gram, SiO 293.15 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1600 ℃ of calcining 10h, obtain Tm 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.06MPa) atmosphere; Control raw materials melt temperature is 2000 ℃, and the crystal pull rate is 1.5mm/h, and changeing brilliant speed is 20rpm, reduces to room temperature with the rate of temperature fall of 0.8 ℃/min behind the growth 10h, promptly obtains transparent laser host crystalline material: 4at.%Tm 3+: (Sc 0.5Y 0.5) 2SiO 5
Fig. 1 is the 4at.%Tm that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The XRD spectra of crystalline material, visible by Fig. 1: prepared crystalline material has the monocline phase structure.
With the 4at.%Tm that makes 3+: (Sc 0.5Y 0.5) 2SiO 5The absorption of test room temperature, emmission spectrum behind crystalline material cutting and the optical polish, pumping source adopts emission wavelength to be positioned at the laser diode (LD) of 808nm.
Fig. 2 is the 4at.%Tm that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5Crystalline material is in the room temperature abosrption spectrogram of 200～2000nm wave band, and is visible by Fig. 2: this crystalline material 3H 6→ 3H 4The energy level transition absorption region is 730～840nm, can be complementary with 808nm laser diode (LD) pumping source well, and its peak absorption cross section is 1.01 * 10 -20Cm 2, greater than existing crystalline material Tm-SSO:0.555 * 10 -20Cm 2121908), Tm-Gd (Appl.Phys.Lett., 96 (2010): 3Ga 5O 12: 1.01 * 10 -20Cm 2(J.Alloys and Compounds, 475 (2009) 555-559), Tm-Y 3Al 5O 12: 0.75 * 10 -20Cm 2(IEEE J.Quantum Electron., 24 (1988) 924-933), Tm-YAlO 3: 0.922 * 10 -20Cm 2(J.Alloys Compd., 453 (2008) 482-486), Tm-LiGdF 4: 0.78 * 10 -20Cm 2(E||c) (Applied Physics B, 96 (2009) 363-368), Tm-Sr 3Y (BO 3) 3: 0.61 * 10 -20Cm 2(π) (J.Alloys and Compounds, 481 (2009) 354-357).
Fig. 3 is the 4at.%Tm that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The room temperature emmission spectrum figure that crystalline material is excited by 808nm LD at 1500～2200nm wave band, visible by Fig. 3: 3F 4→ 3H 6Luminescence spectrum is level and smooth unimodal curve, and the emission spectra peak wavelength is positioned at 1887 μ m, and halfwidth is 228nm, is suitable for carrying out laser mode locking and wide-band tuning; Its peak emission cross section is: 2.7 * 10 -21Cm 2With existing crystalline material: Tm 3+-Gd 3Ga 5O 12Be 1.05 * 10 -21Cm 2(J.Alloys and Compounds, 475 (2009) 555-559), Tm 3+-LaF 3Be 2.5 * 10 -21Cm 2(IEEE J.Quantum Electron., 28 (1992) 2619-2630), Tm 3+-Y 3Al 5O 12Be 2.2 * 10 -21Cm 2(IEEE J.Quantum Electron., 28 (1992) 2619-2630) compare, and this crystalline material has bigger emission cross section, can be applicable to prepare all solid state tunable and ultrafast laser device.
Adopt autocollimation method to measure the crystalline thermal refractive index coefficient; Concrete grammar is: crystal is processed the Littrow prism be placed on temperature fluctuation less than in ± 1 ℃ the stove; It is on the platform of 32J goniometer of 2 second of arcs that this stove places precision, utilizes 0.4880 μ m Ar of stabilized intensity +Laser, 0.6328 μ m He-Ne laser, 1.0795 μ m and 1.3414 μ m Nd:YAlO 3Continuous laser, 1.0640 μ m Nd:YAG laser are done measurement light source and are measured ordinary light and unusual optical index n e, n oUtilize said system to measure the crystalline specific refractory power down, through separating Sellmeier equation: n in different temperature points (＞4) and wavelength (＞4) i 2=A i+ B i/ [λ 2-C i]-D iλ 2, (i=differing temps) obtains constant A i, B i, C i, D iValue.By the Sellmeier equation under the differing temps that obtains, can calculate the specific refractory power of different wave length under the relevant temperature, the equation scope of application is 0.4880-1.3414 μ m.Suppose Sellmeier coefficient and temperature line relationship, the Sellmeier coefficient can be expressed as like this: A (T)=aT+p; B (T)=bT+q; C (T)=cT+r; D (T)=dT+s; Do one-variable linear regression through method of least squares then, calculate all relation conefficients; The Sellmeier coefficient is brought into the Sellmeier equation and is asked T is differentiated, obtain the thermal refractive index coefficient calculation formula and be: Dn DT = ( a - D&lambda; 2 ) + c ( BT + q ) ( &lambda; 2 - CT - r ) 2 + b &lambda; 2 - CT - r 2 [ ( a - D&lambda; 2 ) T + ( p - S&lambda; 2 ) + BT + q &lambda; 2 - CT - r ] .
Through measuring the 4at.%Tm that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The thermal refractive index coefficient of crystalline material is-2.6 * 10 -6K -1
Embodiment 2
Take by weighing Er according to stoichiometric ratio 2O 37.04 gram, Sc 2O 3201.11 gram, Y 2O 382.32 gram, SiO 2109.52 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1200 ℃ of calcining 20h, obtain Er 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.02MPa) atmosphere; Control raw materials melt temperature is 1900 ℃, and the crystal pull rate is 0.5mm/h, and changeing brilliant speed is 15rpm, reduces to room temperature with the rate of temperature fall of 0.5 ℃/min behind the growth 20h, promptly obtains transparent laser host crystalline material: 1.0at.%Er 3+: (Sc 0.8Y 0.2) 2SiO 5
Through measuring the 1.0at.%Er that present embodiment makes 3+: (Sc 0.8Y 0.2) 2SiO 5The thermal refractive index coefficient of crystalline material is-4.3 * 10 -6K -1
Embodiment 3
Take by weighing Nd according to stoichiometric ratio 2O 32.96 gram, Sc 2O 3160.60 gram, Y 2O 3131.48 gram, SiO 2139.94 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1300 ℃ of calcining 18h, obtain Nd 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.03MPa) atmosphere; Control raw materials melt temperature is 1920 ℃, and the crystal pull rate is 0.8mm/h, and changeing brilliant speed is 16rpm, reduces to room temperature with the rate of temperature fall of 0.6 ℃/min behind the growth 18h, promptly obtains transparent laser host crystalline material: 0.5at.%Nd 3+: (Sc 2/3Y 1/3) 2SiO 5
Through measuring the 0.5at.%Nd that present embodiment makes 3+: (Sc 2/3Y 1/3) 2SiO 5The thermal refractive index coefficient of crystalline material is-3.1 * 10 -6K -1
Embodiment 4
Take by weighing Yb according to stoichiometric ratio 2O 35.85 gram, Sc 2O 340.52 gram, Y 2O 3265.37 gram, SiO 288.26 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1500 ℃ of calcining 12h, obtain Yb 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.04MPa) atmosphere; Control raw materials melt temperature is 1960 ℃, and the crystal pull rate is 1.2mm/h, and changeing brilliant speed is 20rpm, reduces to room temperature with the rate of temperature fall of 1.0 ℃/min behind the growth 12h, promptly obtains transparent laser host crystalline material: 1.0at.%Yb 3+: (Sc 0.2Y 0.8) 2SiO 5
Through measuring the 1.0at.%Yb that present embodiment makes 3+: (Sc 0.2Y 0.8) 2SiO 5The thermal refractive index coefficient of crystalline material is-1.2 * 10 -6K -1
Embodiment 5
Take by weighing Ho according to stoichiometric ratio 2O 36.21 gram, Sc 2O 3112.23 gram, Y 2O 3183.76 gram, SiO 297.79 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1400 ℃ of calcining 15h, obtain Ho 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.04MPa) atmosphere; Control raw materials melt temperature is 1940 ℃, and the crystal pull rate is 1.0mm/h, and changeing brilliant speed is 18rpm, reduces to room temperature with the rate of temperature fall of 0.8 ℃/min behind the growth 15h, promptly obtains transparent laser host crystalline material: 1.0at.%Ho 3+: (Sc 0.5Y 0.5) 2SiO 5
Through measuring the 1.0at.%Ho that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The thermal refractive index coefficient of crystalline material is-2.3 * 10 -6K -1
Embodiment 6
Take by weighing Yb according to stoichiometric ratio 2O 312.87 gram, Sc 2O 3110.33 gram, Y 2O 3180.66 gram, SiO 296.14 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1500 ℃ of calcining 10h, obtain Yb 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.04MPa) atmosphere; Control raw materials melt temperature is 1950 ℃, and the crystal pull rate is 2.0mm/h, and changeing brilliant speed is 15rpm, reduces to room temperature with the rate of temperature fall of 0.7 ℃/min behind the growth 16h, promptly obtains transparent laser host crystalline material: 2at.%Yb 3+: (Sc 0.5Y 0.5) 2SiO 5
Through measuring the 2at.%Yb that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The thermal refractive index coefficient of crystalline material is-2.7 * 10 -6K -1
Embodiment 7
Take by weighing Nd according to stoichiometric ratio 2O 311.04 gram, Sc 2O 3110.86 gram, Y 2O 3181.51 gram, SiO 296.59 gram, thorough mixing and compression moulding; The raw material of compression moulding is inserted in the retort furnace in 1200 ℃ of calcining 16h, obtain Nd 3+Adulterated yttrium silicate scandium polycrystal raw material.
The polycrystal raw material that obtains is inserted in the single crystal growing furnace, adopt crystal pulling method to carry out crystal growth: use the Ir crucible that is of a size of Φ 60mm * 40mm, use<010>Direction YSO crystal is a seed crystal, adopts N 2(0.05MPa) atmosphere; Control raw materials melt temperature is 1910 ℃, and the crystal pull rate is 1.8mm/h, and changeing brilliant speed is 16rpm, reduces to room temperature with the rate of temperature fall of 0.6 ℃/min behind the growth 14h, promptly obtains transparent laser host crystalline material: 2at.%Nd 3+: (Sc 0.5Y 0.5) 2SiO 5
Through measuring the 2at.%Nd that present embodiment makes 3+: (Sc 0.5Y 0.5) 2SiO 5The thermal refractive index coefficient of crystalline material is-2.1 * 10 -6K -1
Annotate: " at.% " implication in the literary composition is meant atomic percent, and method of calculation are: suppose that the growing crystal chemical formula is: n at.%Re 3+: (Sc xY 1-x) 2SiO 5, confirm total weight of preparing burden according to the size of the used crucible of growth, the gross weight of prewired material is 400g in this patent, supposes to use Re 2O 3Amount is a mol, Sc 2O 3Amount then has: Y for b mol 2O 3Amount be b (1-x)/x mol, SiO 2Amount be b/x mol. and have according to doping concentration of rare earth ion: 2a/ [2a+2b+2b (1-x)/x]=n/100 promptly has: b=xa (100-n)/n. can try to achieve the quality of each component composition again according to the gross weight of batching.
In sum; Laser host crystalline material provided by the invention has the negative index temperature factor; Can effectively solve the defect problem of the thermal lensing effect of existing laser host crystalline material existence; And have good thermomechanical property, and be a kind of laser host crystalline material of excellent property, can be applicable to prepare the tunable wave length of laser diode (LD) or pumping or all solid state laser of ultrashort pulse.
Should explain at last and be: above embodiment only is used for the present invention is further specified; Can not be interpreted as the restriction to protection domain of the present invention, some nonessential improvement that those skilled in the art's foregoing according to the present invention is made and adjustment all belong to protection scope of the present invention.

Claims (10)

1. a laser host crystalline material is characterized in that, has following general formula: (Sc xY 1-x) 2SiO 5, 0＜x＜1 wherein.
2. laser host crystalline material according to claim 1 is characterized in that: be doped with trivalent rare earth ions in the described laser host crystalline material.
3. laser host crystalline material according to claim 2 is characterized in that: the trivalent rare earth ions that is doped with 0.5～1.0at.% in the described laser host crystalline material.
4. according to claim 2 or 3 described laser host crystalline materials, it is characterized in that: described trivalent rare earth ions is selected from Yb 3+, Nd 3+, Er 3+, Tm 3+, Ho 3+In any one or a few combination.
5. the preparation method of the described laser host crystalline material of claim 1 is characterized in that, comprises the steps:
A) take by weighing each component according to stoichiometric ratio, mix and compression moulding, calcine then;
B) adopt crystal pulling method to carry out crystal growth.
6. the preparation method of laser host crystalline material according to claim 5 is characterized in that: described each component is the oxide compound of each element of containing.
7. the preparation method of laser host crystalline material according to claim 5 is characterized in that: described calcination condition is 1200～1600 ℃ of calcinings 10～20 hours.
8. the preparation method of laser host crystalline material according to claim 5 is characterized in that, the condition that adopts crystal pulling method to carry out crystal growth is: use iraurite (Ir) crucible, adopt<010>Direction Y 2SiO 5Crystal is a seed crystal, and growth atmosphere is N 2, air pressure is at 0.02～0.06Mpa; The raw materials melt temperature is 1900～2000 ℃, and the crystal pull rate is 0.5～2.0mm/h, and changeing brilliant speed is 15～20rpm, grows and reduces to room temperature with the rate of temperature fall of 0.5～1.0 ℃/min after 10～20 hours.
9. an application rights requires the laser diode (LD) of 1 described laser host crystalline material preparation.
10. an application rights requires tunable wave length or all solid state laser of ultrashort pulse of the pumping of 1 described laser host crystalline material preparation.
CN201110350989.5A 2011-11-09 2011-11-09 Laser host crystal material, and preparation method and application thereof Active CN102400223B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030222248A1 (en) * 2002-05-31 2003-12-04 Mcclellan Kenneth J. Crystalline rare-earth activated oxyorthosilicate phosphor
CN1737219A (en) * 2005-08-09 2006-02-22 中国科学院上海光学精密机械研究所 Ytterbium doped lutetium yttrium silicate laser crystal and preparation method thereof
CN101387010A (en) * 2008-06-30 2009-03-18 中国科学院上海硅酸盐研究所 Neodymium-dopping scandium silicate laser crystal and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030222248A1 (en) * 2002-05-31 2003-12-04 Mcclellan Kenneth J. Crystalline rare-earth activated oxyorthosilicate phosphor
CN1737219A (en) * 2005-08-09 2006-02-22 中国科学院上海光学精密机械研究所 Ytterbium doped lutetium yttrium silicate laser crystal and preparation method thereof
CN101387010A (en) * 2008-06-30 2009-03-18 中国科学院上海硅酸盐研究所 Neodymium-dopping scandium silicate laser crystal and preparation method thereof

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