CN102391872A - Er doped GaN fluorescent powder and preparation method thereof - Google Patents
Er doped GaN fluorescent powder and preparation method thereof Download PDFInfo
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- CN102391872A CN102391872A CN 201110403427 CN201110403427A CN102391872A CN 102391872 A CN102391872 A CN 102391872A CN 201110403427 CN201110403427 CN 201110403427 CN 201110403427 A CN201110403427 A CN 201110403427A CN 102391872 A CN102391872 A CN 102391872A
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- 239000000843 powder Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 3
- 238000002156 mixing Methods 0.000 claims description 43
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 150000002823 nitrates Chemical class 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000000935 solvent evaporation Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 abstract description 7
- 230000008020 evaporation Effects 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- 229910005183 Ga(NO3)3.9H2O Inorganic materials 0.000 abstract 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 22
- 230000000694 effects Effects 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000009825 accumulation Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 11
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052761 rare earth metal Inorganic materials 0.000 description 6
- 230000007704 transition Effects 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- -1 rare earth ion Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention discloses an Er doped GaN fluorescent powder and a preparation method thereof. The fluorescent powder has a chemical formula of Ga(1-2x-y-z)Er2xCeyAzN, wherein A represents element Mg or Si, and x, y and z satisfy the relations of: 0.05%<=x<=5.0%, 0.2x<=y<=2x, and 0.001%<=z<=0.01%. Raw materials of Ga(NO3)3.9H2O, Er2O3,CeO2 and MgO or Si(OC2H5)4 are weighed according to molar ratio, dissolved respectively and mixed; after evaporation of a solvent, an obtained block is ground into powder and treated in a nitrogen atmosphere at 600-800 DEG C to obtain an ion doped Ga2O3 material; then the material is further treated in a NH3 atmosphere at 850-1050 DEG C to obtain the ion doped GaN fluorescent powder. The method can effectively enhance luminous efficiency of the Er doped GaN fluorescent powder, while improving electrical conductivity performance of the material.
Description
Technical field
The present invention relates to a kind of phosphor, particularly a kind of GaN fluorescent material of mixing Er and preparation method thereof.
Background technology
The third generation semiconductor material development in recent years that with GaN is representative is rapid, and GaN has wide direct band gap, and good chemicalstability and thermostability exist huge using value at optoelectronic areas.GaN still is the rare earth doped body material of a kind of ideal, and the energy gap of 3.4eV can reduce the temperature quenching effect much larger than silicon, and most rare earth ion occupies the position of Ga in the GaN lattice, can increase transition probability in the 4f layer.The doping content of rare earth ion in GaN can reach 10
21Cm
-3, so high doping content has increased the rare earth luminescence centre concentration.In GaN, mix different rare earth and can send the light from visible light to the infrared light different wave length, and the luminance brightness of sending is high, color is pure, aspect panchromatic demonstration and the LED demonstration important application is being arranged.
In GaN, mix the Er ion, excite down in optical excitation, outside energy such as electricity injections etc., the Er ion can absorb energy the transition from ground state to excited state takes place, and excited state is unstable, and meeting transition is again returned ground state and luminous, comprising generation
4I
13/2→
4I
15/2Energy level transition; Launch the light of 1.55 μ m; Have at aspects such as optical communication, light amplification, medical treatment important application (referring to document " Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition ", [J] Applied Physics Letters, 2006; 89,151903).Yet in mixing the GaN of Er,
4I
11/2The fluorescence lifetime of excited level is longer, is not easy to relax towards
4I
13/2Energy level, this characteristic cause taking place
4I
13/2→
4I
15/2The atom number of energy level transition less, the luminous efficiency of 1.55 mu m wavebands is lower.In addition, the Er ionic electroconductibility of mixing semiconductor material GaN also has certain disadvantageous effect.
Summary of the invention
In order to overcome the deficiency that prior art exists, the purpose of this invention is to provide GaN fluorescent material of a kind of Er of mixing and preparation method thereof, it can effectively improve the luminous efficiency of the GaN fluorescent material of mixing Er, and simultaneously, the N type or the P-type conduction performance of material improve.
Realize that the technical scheme of the object of the invention provides the GaN fluorescent material of a kind of Er of mixing, its chemical formula is Ga
(1-2x-y-z)Er
2xCe
yA
zN, wherein, A is element M g or Si, 0.05%≤x≤5.0%, 0.2x≤y≤2x, 0.001%≤z≤0.01%.
The present invention also provides the preparation method of the GaN fluorescent material of a kind of Er of mixing, comprises the steps:
1, in molar ratio, Ga (NO
3)
39H
2O: Er
2O
3: CeO
2: MgO or Si (OC
2H
5)
4)=(1-2x-y-z): x: y:z takes by weighing each raw material, wherein, and 0.05%≤x≤5.0%, 0.2x≤y≤2x, 0.001%≤z≤0.01%;
2, Ga (NO
3)
39H
2O is dissolved in the deionized water, Er
2O
3And CeO
2Be dissolved in respectively in the concentrated nitric acid, after above-mentioned three kinds of solution are mixed, add the concentrated nitric acid solution of MgO again, or dripping Si (OC under the agitation condition fast
2H
5)
4, obtain mixing solutions;
3, under 90～120 ℃ temperature with the solvent evaporation in the above-mentioned mixing solutions, the block that obtains doing becomes powder with its porphyrize again;
4, be to handle 5～7 hours under 600～800 ℃ the condition in nitrogen atmosphere, temperature with the powder that obtains, nitrate salt and silica gel powder are decomposed, obtain the Er that mixes
3+, Ce
3+, and Mg
2+Or Si
4+Ionic Ga
2O
3Powder;
5, at NH
3Atmosphere, temperature are to handle 6～9 hours under 850～1050 ℃ the condition, obtain a kind of GaN fluorescent material of dopant ion.
Compared with prior art; Advantage of the present invention is: owing in GaN, mix in the Er element, mixed the Ce element altogether, thereby can strengthen the emission efficiency of Er element at 1.55 mu m wavebands to a certain extent; In GaN, mix simultaneously Mg or Si element altogether; Can improve the P type or the N type conductivity of material, avoid because Er, mixing of REE such as Ce and reduce the conductivity of material.
Description of drawings
Fig. 1 is the X ray diffracting spectrum of the GaN fluorescent material of mixing Er of embodiment of the invention preparation.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is further described.
Embodiment 1
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is element M g, x=0.05%, y=0.01%, z=0.001%.
Its preparation method is: with Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, the MgO high pure raw material was according to 0.99889: 0.0005: the mole proportioning of 0.0001:0.00001 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2, MgO obtains solution, with above-mentioned solution uniform mixing; The above mixing solutions of evaporation under 90 ℃ temperature, the block materials that obtains doing obtains powder with its porphyrize then.Under nitrogen protection, under 600 ℃, handle making the powder decomposition obtain mixing Er in 5 hours
3+, Ce
3+And Mg
2+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, under 850 ℃, handle and obtained mixing Er in 6 hours
3+, Ce
3+And Mg
2+The GaN fluorescent powder.
Referring to accompanying drawing 1; It is the X-ray diffraction spectrum of the GaN fluorescent material of mixing Er of present embodiment preparation; Can find out by Fig. 1; Fully corresponding with the X-ray diffraction spectrum of the GaN of standard (X-ray DB PDF card number be 760703), show that the fluorescent material of mixing Er that present embodiment prepares is GaN six side's phases, there are not other dephasigns.
Present embodiment is mixed Er
3+, Ce
3+, Mg
2+GaN fluorescent powder sample with do not mix Ce altogether
3+And Mg
2+Compare with the concentration sample, 1.55 μ m fluorescence intensities strengthen 8～15%.This sample is carried out the 20KV electron beam irradiation observe in ESEM, do not find tangible electric charge accumulation effect, show that electric charge is led away, sample electroconductibility is better; And mix Er
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged, therefore Mg is mixed in explanation altogether
2+After can improve the electroconductibility of sample really.
Embodiment 2
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is element M g, x=5%, y=10%, z=0.01%.
With Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, the MgO high pure raw material was according to 0.7999: 0.05: the mole proportioning of 0.1:0.0001 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2, MgO obtains solution, with above-mentioned solution uniform mixing; The block materials that the above mixing solutions of evaporation obtains doing under 120 ℃ temperature obtains powder with its porphyrize then.Under nitrogen protection, handle 7h down at 800 ℃ and make the powder decomposition obtain mixing Er
3+, Ce
3+And Mg
2+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, handle 9h down at 1050 ℃ and obtain mixing Er
3+, Ce
3+And Mg
2+The GaN fluorescent powder.Than not mixing Ce altogether
3+And Mg
2+Same concentration mix Er
3+The GaN fluorescent powder, 1.55 μ m fluorescence intensities strengthen 8%-15%.In ESEM, observing under the 20KV electron irradiation does not have tangible electric charge accumulation effect, and the electroconductibility of illustrative material is good, and only mixes with the Er of concentration
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged.
Embodiment 3
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is element M g, x=1%, y=1%, z=0.005%.
With Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, the MgO high pure raw material was according to 0.96995: 0.01: the mole proportioning of 0.01:0.00005 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2, MgO obtains solution, with above-mentioned solution uniform mixing; The block materials that the above mixing solutions of evaporation obtains doing under 105 ℃ temperature obtains powder with its porphyrize then.Under nitrogen protection, handle 6h down at 700 ℃ and make the powder decomposition obtain mixing Er
3+, Ce
3+And Mg
2+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, handle 8h down at 950 ℃ and obtain mixing Er
3+, Ce
3+And Mg
2+The GaN fluorescent powder.Than not mixing Ce altogether
3+And Mg
2+Same concentration mix Er
3+The GaN fluorescent powder, 1.55 μ m fluorescence intensities strengthen 8%-15%.In ESEM, observing under the 20KV electron irradiation does not have tangible electric charge accumulation effect, and the electroconductibility of illustrative material is good, and only mixes with the Er of concentration
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged.
Embodiment 4
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is an elements Si, x=0.5%, y=0.6%, z=0.006%.With Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, Si (OC
2H
5)
4High pure raw material was according to 0.98394: 0.005: the mole proportioning of 0.006:0.00006 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2Obtain solution, after solution is mixed, under stirring fast, splash into the Si (OC of specified amount again
2H
5)
4The block materials that the above mixing solutions of evaporation obtains doing under 100 ℃ temperature obtains powder with its porphyrize then.Under nitrogen protection, handle 6h down at 700 ℃ and make the powder decomposition obtain mixing Er
3+, Ce
3+And Si
4+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, handle 7h down at 900 ℃ and obtain mixing Er
3+, Ce
3+And Si
4+The GaN fluorescent powder.Than not mixing Ce altogether
3+And Si
4+Same concentration mix Er
3+The GaN fluorescent powder, 1.55 μ m fluorescence intensities strengthen 8%-15%.In ESEM, observing under the 20KV electron irradiation does not have tangible electric charge accumulation effect, and the electroconductibility of illustrative material is good, and only mixes with the Er of concentration
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged.
Embodiment 5
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is an elements Si, x=0.05%, y=0.01%, z=0.001%.With Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, Si (OC
2H
5)
4High pure raw material was according to 0.99889: 0.0005: the mole proportioning of 0.0001:0.00001 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2Obtain solution, after solution is mixed, under stirring fast, splash into the Si (OC of specified amount again
2H
5)
4The block materials that the above mixing solutions of evaporation obtains doing under 90 ℃ temperature obtains powder with its porphyrize then.Under nitrogen protection, handle 5h down at 600 ℃ and make the powder decomposition obtain mixing Er
3+, Ce
3+And Si
4+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, handle 6h down at 850 ℃ and obtain mixing Er
3+, Ce
3+And Si
4+The GaN fluorescent powder.Than not mixing Ce altogether
3+And Si
4+Same concentration mix Er
3+The GaN fluorescent powder, 1.55 μ m fluorescence intensities strengthen 8%-15%.In ESEM, observing under the 20KV electron irradiation does not have tangible electric charge accumulation effect, and the electroconductibility of illustrative material is good, and only mixes with the Er of concentration
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged.
Embodiment 6
In the present embodiment, preparation chemical formula Ga
(1-2x-y-z)Er
2xCe
yA
zThe fluorescent material of N, wherein, A is an elements Si, x=5%, y=10%, z=0.01%.
With Ga (NO
3)
39H
2O, Er
2O
3, CeO
2, Si (OC
2H
5)
4High pure raw material was according to 0.7999: 0.05: the mole proportioning of 0.1:0.0001 is weighed, with deionized water dissolving Ga (NO
3)
39H
2O dissolves Er with concentrated nitric acid
2O
3, CeO
2Obtain solution, after solution is mixed, under stirring fast, splash into the Si (OC of specified amount again
2H
5)
4The block materials that the above mixing solutions of evaporation obtains doing under 120 ℃ temperature obtains powder with its porphyrize then.Under nitrogen protection, handle 7h down at 800 ℃ and make the powder decomposition obtain mixing Er
3+, Ce
3+And Si
4+Ga
2O
3Powder.Ga with the ion doping that obtains
2O
3Powder is at NH
3Under the atmosphere protection, handle 9h down at 1050 ℃ and obtain mixing Er
3+, Ce
3+And Si
4+The GaN fluorescent powder.Than not mixing Ce altogether
3+And Si
4+Same concentration mix Er
3+The GaN fluorescent powder, 1.55 μ m fluorescence intensities strengthen 8%-15%.In ESEM, observing under the 20KV electron irradiation does not have tangible electric charge accumulation effect, and the electroconductibility of illustrative material is good, and only mixes with the Er of concentration
3+, Ce
3+GaN fluorescent powder material under similarity condition, observe, significantly electric charge accumulation effect is arranged.
Claims (2)
1. GaN fluorescent material of mixing Er, it is characterized in that: chemical formula is Ga
(1-2x-y-z)Er
2xCe
yA
zN, wherein, A is element M g or Si, 0.05%≤x≤5.0%, 0.2x≤y≤2x, 0.001%≤z≤0.01%.
2. a preparation method who mixes the GaN fluorescent material of Er as claimed in claim 1 is characterized in that comprising the steps:
(1) in molar ratio, Ga (NO
3)
39H
2O: Er
2O
3: CeO
2: MgO or Si (OC
2H
5)
4)=(1-2x-y-z): x: y:z takes by weighing each raw material, wherein, and 0.05%≤x≤5.0%, 0.2x≤y≤2x, 0.001%≤z≤0.01%;
(2) Ga (NO
3)
39H
2O is dissolved in the deionized water, Er
2O
3And CeO
2Be dissolved in respectively in the concentrated nitric acid, after above-mentioned three kinds of solution are mixed, add the concentrated nitric acid solution of MgO again, or dripping Si (OC under the agitation condition fast
2H
5)
4, obtain mixing solutions;
(3) under 90～120 ℃ temperature with the solvent evaporation in the above-mentioned mixing solutions, the block that obtains doing becomes powder with its porphyrize again;
(4) be to handle 5～7 hours under 600～800 ℃ the condition in nitrogen atmosphere, temperature with the powder that obtains, nitrate salt and silica gel powder are decomposed, obtain the Er that mixes
3+, Ce
3+, and Mg
2+Or Si
4+Ionic Ga
2O
3Powder;
(5) at NH
3Atmosphere, temperature are to handle 6～9 hours under 850～1050 ℃ the condition, obtain a kind of GaN fluorescent material of dopant ion.
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|---|---|---|---|
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|---|---|---|---|
| CN 201110403427 CN102391872B (en) | 2011-12-07 | 2011-12-07 | Er doped GaN fluorescent powder and preparation method thereof |
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| CN102391872B CN102391872B (en) | 2012-12-12 |
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ID=45859258
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103224793A (en) * | 2013-05-16 | 2013-07-31 | 苏州科技学院 | Rare-earth doped GaN luminescent powder and preparation method thereof |
| CN104449689A (en) * | 2014-12-14 | 2015-03-25 | 励春亚 | Preparation method of rare-earth doped GaN material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542084A (en) * | 2003-08-29 | 2004-11-03 | 罗维鸿 | A fluorescent inorganic substance of solid light source |
| CN1923948A (en) * | 2005-08-22 | 2007-03-07 | 矢野昶晖科技（上海）有限公司 | Fluorescence inorganics of solid light source |
| US20080290355A1 (en) * | 2006-12-28 | 2008-11-27 | Soshchin Naum | Warm white LED and its phosphor that provides orange-yellow radiation |
-
2011
- 2011-12-07 CN CN 201110403427 patent/CN102391872B/en not_active Withdrawn - After Issue
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1542084A (en) * | 2003-08-29 | 2004-11-03 | 罗维鸿 | A fluorescent inorganic substance of solid light source |
| CN1923948A (en) * | 2005-08-22 | 2007-03-07 | 矢野昶晖科技（上海）有限公司 | Fluorescence inorganics of solid light source |
| US20080290355A1 (en) * | 2006-12-28 | 2008-11-27 | Soshchin Naum | Warm white LED and its phosphor that provides orange-yellow radiation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103224793A (en) * | 2013-05-16 | 2013-07-31 | 苏州科技学院 | Rare-earth doped GaN luminescent powder and preparation method thereof |
| CN103224793B (en) * | 2013-05-16 | 2014-11-26 | 苏州科技学院 | Rare-earth doped GaN luminescent powder and preparation method thereof |
| CN104449689A (en) * | 2014-12-14 | 2015-03-25 | 励春亚 | Preparation method of rare-earth doped GaN material |
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| Publication number | Publication date |
|---|---|
| CN102391872B (en) | 2012-12-12 |
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