A kind of high-voltage reactive compensation IGBT power unit
Technical field
The invention belongs to electric and electronic technical field, be specifically related to a kind of high-voltage reactive compensation IGBT power unit.
Background technology
Power cell is that to take the power electronic device such as transistor, diode be switch executing element, the intelligent cell that power circuit, protective circuit, control circuit, self-diagnostic circuit and power electronic device are become one.The power electronic equipment that forms various different purposes by this cordwood system type combination of the serial or parallel connection between unit.Fig. 2 is the power cell graphics of prior art, the power cell front view that Fig. 3 is prior art.
In the application of power electronic equipment, unit internal transistor and diode etc. operate mainly on off state, and DC capacitor is operated in charge and discharge state, makes inside modules produce a part of power loss.The power consumption of these loss devices, it makes element heating, now need to heat be taken away by cooling system.If heat radiation is not exclusively or not in time, will cause the excess Temperature of element, there is irreversible variation and lost efficacy in the crystal structure of chip, causes the puncture short of element when serious.
At present, for the cooling mode of crystal pipe valve, mainly contain four kinds: water-cooled, air-cooled, naturally cooling and heat pipe heat radiation.Mainly adopt in actual applications water-cooled, air-cooled.The most of employing of traditional transistor unit is advanced, rear air-out type structure, and coolant can only be taken away heat that heater members produces on radiator.
As Fig. 1, the IGBT chain link power unit based on full control device is applied widely in high voltage converter, static reacance generator (STATCOM).What the chain link power unit of at present domestic and international manufacturers design adopted is all power terminal and the preposition design of control.The preposition major defect of power terminal and control terminal is that front panel has been concentrated power port and control port on the one hand, safety and less reliable; On the other hand, front panel is user oriented normally, and too many port makes the variation attractive in appearance of device integral body.
Summary of the invention
In order to overcome above-mentioned deficiency of the prior art, the invention provides a kind of high-voltage reactive compensation IGBT power unit, transistor is rearmounted, adopt the mode of reverse chain link, not only take away on radiator heater members and produce heat, and effectively take away DC capacitor, getting can circuit, heat that discharge circuit produces.Also have that volume is little simultaneously, compact conformation, stray inductance be little, easy to maintenance.
To achieve these goals, the present invention adopts following technical scheme:
A high-voltage reactive compensation IGBT power unit, described power cell comprises power cell casing assembly 1, direct current capacitor assembly 2, IGBT assembly 3, protection and control unit 4, self diagnosis and driver element 5 and power supply module 6; Described direct current capacitor assembly 2 and described IGBT assembly 3 are fixed in power cell casing assembly 1, with copper bar, connect; Described protection and control unit 4 and described self diagnosis and driver element 5 are all positioned at described direct current capacitor assembly 2 tops, fixing with described power cell casing assembly 1; Described power supply module 6 is installed on described IGBT assembly 3 tops, fixing with IGBT assembly 3.
Described protection and control unit 4 are integrated on pcb board card, and the number of described pcb board card is 1.
Described IGBT assembly 3 comprises radiator.
The binding post height of described direct current capacitor assembly 2 and described IGBT assembly 3 DC side height equate.
The IGBT element of described IGBT assembly 3 is positioned at the side-lower of described self diagnosis and driver element 5, makes to drive lead-in wire the shortest.
Described IGBT element 3 is arranged with the DC capacitor symmetrical expression of described direct current capacitor assembly 2, is made every IGBT element 3 and described DC capacitor be operated in equal state.
One time power terminal 8b is positioned at described power cell rear portion, and it is positive that linear quadratic control terminal 9b is positioned at described power cell, make once, secondary circuit separately.
Compared with prior art, beneficial effect of the present invention is:
1. transistor is rearmounted, and adopts the structure of reverse chain link, not only take away heater members on radiator and produce heat, and effectively take away DC capacitor, getting can circuit, heat that discharge circuit produces;
2. little, the compact conformation of volume;
3. stray inductance is little, easy to maintenance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of high voltage converter and reacance generator;
Fig. 2 is the power cell graphics of prior art;
Wherein: 7. radiator, 8a. power terminal, 9a. control terminal;
Fig. 3 is the power cell front view of prior art;
Wherein: 8a. power terminal, 9a. control terminal, 10. front panel;
Fig. 4 is a kind of high-voltage reactive compensation IGBT power unit graphics;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly, 4. protection and control unit, 5. self diagnosis and driver element, 6. power supply module;
Fig. 5 is a kind of high-voltage reactive compensation IGBT power unit front view;
Wherein: 9b. linear quadratic control terminal, 10. front panel;
Fig. 6 is a kind of high-voltage reactive compensation IGBT power unit right view;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly, 4. protection and control unit, 5. self diagnosis and driver element, 6. power supply module;
Fig. 7 is a kind of high-voltage reactive compensation IGBT power unit vertical view;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly;
Fig. 8 is a kind of high-voltage reactive compensation IGBT power unit rearview;
Wherein: power terminal of 8b., 11. rear boards;
Fig. 9 is the installation diagram of a kind of high-voltage reactive compensation IGBT power unit in rack;
Wherein: 12. Door of communication apparatus cabinet, 13. Qianmen blast pipes, 14.IGBT power cell, 9b. linear quadratic control terminal, 15. cabinets are machine against the wind, 16. cabinet frameworks, power terminal of 8b., 17. rack back doors, 18. dividing plates.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As Fig. 4, a kind of high-voltage reactive compensation IGBT power unit, described power cell comprises power cell casing assembly 1, direct current capacitor assembly 2, IGBT assembly 3, protection and control unit 4, self diagnosis and driver element 5 and power supply module 6; Described direct current capacitor assembly 2 and described IGBT assembly 3 are fixed in power cell casing assembly 1, with copper bar, connect; Described protection and control unit 4 and described self diagnosis and driver element 5 are all positioned at described direct current capacitor assembly 2 tops, fixing with described power cell casing assembly 1; Described power supply module 6 is installed on described IGBT assembly 3 tops, fixing with IGBT assembly 3.
Fig. 5 is a kind of high-voltage reactive compensation IGBT power unit front view.
Fig. 6 is a kind of high-voltage reactive compensation IGBT power unit right view, and described protection and control unit 4 are integrated on pcb board card, and the number of described pcb board card is 1.
Described IGBT assembly 3 comprises radiator.
The binding post height of described direct current capacitor assembly 2 and described IGBT assembly 3 DC side height equate.
The IGBT element of described IGBT assembly 3 is positioned at the side-lower of described self diagnosis and driver element 5, makes to drive lead-in wire the shortest.
Fig. 7 is a kind of high-voltage reactive compensation IGBT power unit vertical view, and described IGBT element 3 is arranged with the DC capacitor symmetrical expression of described direct current capacitor assembly 2, made every IGBT element 3 and described DC capacitor be operated in equal state.
Fig. 8 is a kind of high-voltage reactive compensation IGBT power unit rearview, and one time power terminal 8b is positioned at described power cell rear portion, and it is positive that linear quadratic control terminal 9b is positioned at described power cell, make once, secondary circuit separately.
Fig. 9 is the installation diagram of a kind of high-voltage reactive compensation IGBT power unit in rack.