CN102386624B - High-voltage reactive compensation IGBT power unit - Google Patents
High-voltage reactive compensation IGBT power unit Download PDFInfo
- Publication number
- CN102386624B CN102386624B CN201110336541.8A CN201110336541A CN102386624B CN 102386624 B CN102386624 B CN 102386624B CN 201110336541 A CN201110336541 A CN 201110336541A CN 102386624 B CN102386624 B CN 102386624B
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- igbt
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- subassembly
- power
- power unit
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- 239000003990 capacitor Substances 0.000 claims abstract description 31
- 238000004092 self-diagnosis Methods 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000002441 reversible effect Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000011438 cord wood Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/30—Reactive power compensation
Landscapes
- Control Of Electrical Variables (AREA)
- Power Conversion In General (AREA)
Abstract
The invention provides a high-voltage reactive compensation IGBT power unit, belonging to the technical field of power electronics. The power unit comprises a power unit housing subassembly, a direct-current capacitor subassembly, an IGBT subassembly, a protection and control unit, a self-diagnosis and driving unit, and a power subassembly, wherein the direct-current capacitor subassembly and the IGBT subassembly are fixed in the power unit housing subassembly, and connected through a copper bar; the protection and control unit and the self-diagnosis and driving unit are placed on the direct-current capacitor subassembly, and fixed by the power unit housing subassembly; the power subassembly is arranged on the IGBT subassembly, and fixed through the IGBT subassembly. In the high-voltage reactive compensation IGBT power unit provided by the invention, the way of mounting transistors at the back, and implementing reverse chain link is adopted to radiate the heat produced by the heating device on the radiator and effectively remove the heat produced by the direct-current capacitor, the energy gaining circuit and the discharging circuit. The high-voltage reactive compensation IGBT power unit also has small volume, compact structure, low stray inductance, and convenience of maintenance.
Description
Technical field
The invention belongs to electric and electronic technical field, be specifically related to a kind of high-voltage reactive compensation IGBT power unit.
Background technology
Power cell is that to take the power electronic device such as transistor, diode be switch executing element, the intelligent cell that power circuit, protective circuit, control circuit, self-diagnostic circuit and power electronic device are become one.The power electronic equipment that forms various different purposes by this cordwood system type combination of the serial or parallel connection between unit.Fig. 2 is the power cell graphics of prior art, the power cell front view that Fig. 3 is prior art.
In the application of power electronic equipment, unit internal transistor and diode etc. operate mainly on off state, and DC capacitor is operated in charge and discharge state, makes inside modules produce a part of power loss.The power consumption of these loss devices, it makes element heating, now need to heat be taken away by cooling system.If heat radiation is not exclusively or not in time, will cause the excess Temperature of element, there is irreversible variation and lost efficacy in the crystal structure of chip, causes the puncture short of element when serious.
At present, for the cooling mode of crystal pipe valve, mainly contain four kinds: water-cooled, air-cooled, naturally cooling and heat pipe heat radiation.Mainly adopt in actual applications water-cooled, air-cooled.The most of employing of traditional transistor unit is advanced, rear air-out type structure, and coolant can only be taken away heat that heater members produces on radiator.
As Fig. 1, the IGBT chain link power unit based on full control device is applied widely in high voltage converter, static reacance generator (STATCOM).What the chain link power unit of at present domestic and international manufacturers design adopted is all power terminal and the preposition design of control.The preposition major defect of power terminal and control terminal is that front panel has been concentrated power port and control port on the one hand, safety and less reliable; On the other hand, front panel is user oriented normally, and too many port makes the variation attractive in appearance of device integral body.
Summary of the invention
In order to overcome above-mentioned deficiency of the prior art, the invention provides a kind of high-voltage reactive compensation IGBT power unit, transistor is rearmounted, adopt the mode of reverse chain link, not only take away on radiator heater members and produce heat, and effectively take away DC capacitor, getting can circuit, heat that discharge circuit produces.Also have that volume is little simultaneously, compact conformation, stray inductance be little, easy to maintenance.
To achieve these goals, the present invention adopts following technical scheme:
A high-voltage reactive compensation IGBT power unit, described power cell comprises power cell casing assembly 1, direct current capacitor assembly 2, IGBT assembly 3, protection and control unit 4, self diagnosis and driver element 5 and power supply module 6; Described direct current capacitor assembly 2 and described IGBT assembly 3 are fixed in power cell casing assembly 1, with copper bar, connect; Described protection and control unit 4 and described self diagnosis and driver element 5 are all positioned at described direct current capacitor assembly 2 tops, fixing with described power cell casing assembly 1; Described power supply module 6 is installed on described IGBT assembly 3 tops, fixing with IGBT assembly 3.
Described protection and control unit 4 are integrated on pcb board card, and the number of described pcb board card is 1.
Described IGBT assembly 3 comprises radiator.
The binding post height of described direct current capacitor assembly 2 and described IGBT assembly 3 DC side height equate.
The IGBT element of described IGBT assembly 3 is positioned at the side-lower of described self diagnosis and driver element 5, makes to drive lead-in wire the shortest.
Described IGBT element 3 is arranged with the DC capacitor symmetrical expression of described direct current capacitor assembly 2, is made every IGBT element 3 and described DC capacitor be operated in equal state.
One time power terminal 8b is positioned at described power cell rear portion, and it is positive that linear quadratic control terminal 9b is positioned at described power cell, make once, secondary circuit separately.
Compared with prior art, beneficial effect of the present invention is:
1. transistor is rearmounted, and adopts the structure of reverse chain link, not only take away heater members on radiator and produce heat, and effectively take away DC capacitor, getting can circuit, heat that discharge circuit produces;
2. little, the compact conformation of volume;
3. stray inductance is little, easy to maintenance.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of high voltage converter and reacance generator;
Fig. 2 is the power cell graphics of prior art;
Wherein: 7. radiator, 8a. power terminal, 9a. control terminal;
Fig. 3 is the power cell front view of prior art;
Wherein: 8a. power terminal, 9a. control terminal, 10. front panel;
Fig. 4 is a kind of high-voltage reactive compensation IGBT power unit graphics;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly, 4. protection and control unit, 5. self diagnosis and driver element, 6. power supply module;
Fig. 5 is a kind of high-voltage reactive compensation IGBT power unit front view;
Wherein: 9b. linear quadratic control terminal, 10. front panel;
Fig. 6 is a kind of high-voltage reactive compensation IGBT power unit right view;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly, 4. protection and control unit, 5. self diagnosis and driver element, 6. power supply module;
Fig. 7 is a kind of high-voltage reactive compensation IGBT power unit vertical view;
Wherein: 1. power cell casing assembly, 2. direct current capacitor assembly, 3.IGBT assembly;
Fig. 8 is a kind of high-voltage reactive compensation IGBT power unit rearview;
Wherein: power terminal of 8b., 11. rear boards;
Fig. 9 is the installation diagram of a kind of high-voltage reactive compensation IGBT power unit in rack;
Wherein: 12. Door of communication apparatus cabinet, 13. Qianmen blast pipes, 14.IGBT power cell, 9b. linear quadratic control terminal, 15. cabinets are machine against the wind, 16. cabinet frameworks, power terminal of 8b., 17. rack back doors, 18. dividing plates.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
As Fig. 4, a kind of high-voltage reactive compensation IGBT power unit, described power cell comprises power cell casing assembly 1, direct current capacitor assembly 2, IGBT assembly 3, protection and control unit 4, self diagnosis and driver element 5 and power supply module 6; Described direct current capacitor assembly 2 and described IGBT assembly 3 are fixed in power cell casing assembly 1, with copper bar, connect; Described protection and control unit 4 and described self diagnosis and driver element 5 are all positioned at described direct current capacitor assembly 2 tops, fixing with described power cell casing assembly 1; Described power supply module 6 is installed on described IGBT assembly 3 tops, fixing with IGBT assembly 3.
Fig. 5 is a kind of high-voltage reactive compensation IGBT power unit front view.
Fig. 6 is a kind of high-voltage reactive compensation IGBT power unit right view, and described protection and control unit 4 are integrated on pcb board card, and the number of described pcb board card is 1.
Described IGBT assembly 3 comprises radiator.
The binding post height of described direct current capacitor assembly 2 and described IGBT assembly 3 DC side height equate.
The IGBT element of described IGBT assembly 3 is positioned at the side-lower of described self diagnosis and driver element 5, makes to drive lead-in wire the shortest.
Fig. 7 is a kind of high-voltage reactive compensation IGBT power unit vertical view, and described IGBT element 3 is arranged with the DC capacitor symmetrical expression of described direct current capacitor assembly 2, made every IGBT element 3 and described DC capacitor be operated in equal state.
Fig. 8 is a kind of high-voltage reactive compensation IGBT power unit rearview, and one time power terminal 8b is positioned at described power cell rear portion, and it is positive that linear quadratic control terminal 9b is positioned at described power cell, make once, secondary circuit separately.
Fig. 9 is the installation diagram of a kind of high-voltage reactive compensation IGBT power unit in rack.
Claims (1)
1. a high-voltage reactive compensation IGBT power unit, is characterized in that: described power cell comprises power cell casing assembly (1), direct current capacitor assembly (2), IGBT assembly (3), protection and control unit (4), self diagnosis and driver element (5) and power supply module (6); Described direct current capacitor assembly (2) and described IGBT assembly (3) are fixed in power cell casing assembly (1), with copper bar, connect; Described protection and control unit (4) and described self diagnosis and driver element (5) are all positioned at described direct current capacitor assembly (2) top, fixing with described power cell casing assembly (1); Described power supply module (6) is installed on described IGBT assembly (3) top, fixing with IGBT assembly (3);
Described protection and control unit (4) are integrated on pcb board card, and the number of described pcb board card is 1;
Described IGBT assembly (3) comprises radiator;
The binding post height of described direct current capacitor assembly (2) and described IGBT assembly (3) DC side height equate;
The IGBT element of described IGBT assembly (3) is positioned at the side-lower of described self diagnosis and driver element (5), makes to drive lead-in wire the shortest;
Described IGBT element (3) is arranged with the DC capacitor symmetrical expression of described direct current capacitor assembly (2), is made every IGBT element (3) and described DC capacitor be operated in equal state;
A power terminal (8b) is positioned at described power cell rear portion, and it is positive that linear quadratic control terminal (9b) is positioned at described power cell, make once, secondary circuit separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110336541.8A CN102386624B (en) | 2011-10-31 | 2011-10-31 | High-voltage reactive compensation IGBT power unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110336541.8A CN102386624B (en) | 2011-10-31 | 2011-10-31 | High-voltage reactive compensation IGBT power unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102386624A CN102386624A (en) | 2012-03-21 |
| CN102386624B true CN102386624B (en) | 2014-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110336541.8A Active CN102386624B (en) | 2011-10-31 | 2011-10-31 | High-voltage reactive compensation IGBT power unit |
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| CN (1) | CN102386624B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701862B (en) * | 2013-12-10 | 2017-11-03 | 国家电网公司 | A kind of SVG reactive power compensators of outdoor pole-mounted |
| CN105098791A (en) * | 2014-05-20 | 2015-11-25 | 新能动力（北京）电气科技有限公司 | Active dynamic reactive power compensation device |
| CN104064968B (en) * | 2014-06-03 | 2016-10-05 | 江苏华冠电器集团有限公司 | A kind of static reacance generator (PCC) power |
| CN106301005A (en) * | 2016-08-26 | 2017-01-04 | 思源清能电气电子有限公司 | The high-power chain link module of SVG based on blocking framework |
| CN114430122B (en) * | 2021-12-24 | 2024-05-17 | 新沂市五联电气科技有限公司 | Copper bar connecting system of power electronic module |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201789431U (en) * | 2010-08-04 | 2011-04-06 | 苏州西典机电有限公司 | General inverter module |
| CN201805346U (en) * | 2010-09-27 | 2011-04-20 | 苏州西典机电有限公司 | General current conversion module |
| CN201956689U (en) * | 2010-12-31 | 2011-08-31 | 中电普瑞科技有限公司 | Bypass structure of chain link unit of static synchronous compensator |
| CN102208863A (en) * | 2011-05-30 | 2011-10-05 | 浙江省电力试验研究院 | Converter |
-
2011
- 2011-10-31 CN CN201110336541.8A patent/CN102386624B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201789431U (en) * | 2010-08-04 | 2011-04-06 | 苏州西典机电有限公司 | General inverter module |
| CN201805346U (en) * | 2010-09-27 | 2011-04-20 | 苏州西典机电有限公司 | General current conversion module |
| CN201956689U (en) * | 2010-12-31 | 2011-08-31 | 中电普瑞科技有限公司 | Bypass structure of chain link unit of static synchronous compensator |
| CN102208863A (en) * | 2011-05-30 | 2011-10-05 | 浙江省电力试验研究院 | Converter |
Non-Patent Citations (2)
| Title |
|---|
| 李凯等.高压变频器功率单元采用虚拟空间技术的研发.《电气传动》.2009,第39卷(第10期),76-80. |
| 高压变频器功率单元采用虚拟空间技术的研发;李凯等;《电气传动》;20091231;第39卷(第10期);76-80 * |
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| Publication number | Publication date |
|---|---|
| CN102386624A (en) | 2012-03-21 |
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| PB01 | Publication | ||
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| ASS | Succession or assignment of patent right |
Owner name: STATE ELECTRIC NET CROP. Effective date: 20130521 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20130521 Address after: 100192 Beijing city Haidian District Qinghe small Camp Road No. 15 Applicant after: China Electric Power Research Institute Applicant after: State Grid Corporation of China Address before: 100192 Beijing city Haidian District Qinghe small Camp Road No. 15 Applicant before: China Electric Power Research Institute |
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| C14 | Grant of patent or utility model | ||
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