CN102376345A - Magnetic multilayer film for magnetic random access memory - Google Patents
Magnetic multilayer film for magnetic random access memory Download PDFInfo
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- CN102376345A CN102376345A CN2010102597644A CN201010259764A CN102376345A CN 102376345 A CN102376345 A CN 102376345A CN 2010102597644 A CN2010102597644 A CN 2010102597644A CN 201010259764 A CN201010259764 A CN 201010259764A CN 102376345 A CN102376345 A CN 102376345A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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Abstract
The invention relates to a magnetic multilayer film and an MRAM memory cell thereof. The magnetic multilayer film comprises an MTJ multilayer film for generating TMR effect and a GMR multilayer film for generating GMR effect and under the MTJ multilayer film; the MTJ multilayer film and the GMR multilayer film share a free layer; at least a part adjacent to a side of the GMR multilayer film is exposed, and current traversing the exposed part is used for overturning a free layer magnetic moment. The magnetic multilayer film of the present invention can be employed to reduce power consumption during device usage effectively and avoid barrier damage and memory cell failure in the memory cell caused by repeat and infinite write-in of high density current, thereby realizing long service life.
Description
Technical field
The invention belongs to the MAGNETIC RANDOM ACCESS MEMORY field, specifically relate to a kind of magnetoresistance effect, and the MAGNETIC RANDOM ACCESS MEMORY that separates based on read-write that this magnetoresistance effect designed.
Background technology
As everyone knows; Giant magnetoresistance effect (the Giant Magneto-resistance that in nano-magnetic multilayer film and MTJ (MTJ), observes; GMR) and Tunneling Magnetoresistance (Tunneling Magneto-resistance; TMR) fields such as computing machine magnetic reading head and magneto-dependent sensor have been widely used in; And wherein the extremely important application of the another one of MTJ can be used as MAGNETIC RANDOM ACCESS MEMORY (Magnetic Random Access Memory, best storage unit MRAM) exactly.
At present, the data writing mode of the MRAM of people's proposition mainly is divided into two types.The first kind is the field drives type; The storage unit ferromagnetic layer magnetic moment of (free layer is also claimed bit-level, bit layer) overturns in the magnetic field that promptly produces through electric current; Thereby obtain the variation of the high and low resistance state of magnetic memory cell, realize writing of memory cell data (bit) " 1 ", " 0 ".Second type is current drive-type, the spin transfer torque that promptly the produces magnetic moment of storage unit ferromagnetic layer that overturns through spin polarized current, and then realize writing of memory cell data (bit) " 1 ", " 0 ".With respect to the former; Current drive-type data storing method big structure and the processing technology of having simplified device to the utmost; But its subject matter that still exists at present is to write fashionable power consumption high (being that magneto-resistor is bigger); Fashionable when frequently writing chronically, damage the barrier layer of MTJ in the mram memory cell easily, thereby influence the serviceable life of storage unit and device.
Summary of the invention
Therefore, one object of the present invention is to overcome the defective of above-mentioned prior art, and a kind of magnetoresistance effect that can effectively reduce device power consumption is provided.
Another object of the present invention provides a kind of MAGNETIC RANDOM ACCESS MEMORY based on above-mentioned magnetoresistance effect.
The objective of the invention is to realize through following technical scheme:
According to an aspect of the present invention; The magnetoresistance effect of a kind of MRAM of being used for is provided; This magnetoresistance effect comprises the MTJ multilayer film and the GMR multilayer film that is used to produce the GMR effect that is positioned at below this MTJ multilayer film that is used to produce the TMR effect; Wherein MTJ multilayer film and the shared free layer of GMR multilayer film, wherein:
At least a portion adjacent to MTJ multilayer film one side of said GMR multilayer film is exposed, the electric current that passes this expose portion said free layer magnetic moment that is used to overturn.
In above-mentioned magnetoresistance effect, said GMR multilayer film exposes a plurality of parts, and these a plurality of parts are spaced to one another.
In above-mentioned magnetoresistance effect, said GMR multilayer film exposes a part.
In above-mentioned magnetoresistance effect, the ferromagnetic layer of said free layer for being processed by ferrimagnet, this ferrimagnet have level or vertical magnetocrystalline anisotropy.
In above-mentioned magnetoresistance effect, said GMR multilayer film comprise hard iron magnetosphere, non-magnetic metal layer and shared ferromagnetic layer, said MTJ multilayer film comprise shared ferromagnetic layer, insulation course and hard iron magnetosphere.
In above-mentioned magnetoresistance effect, said GMR multilayer film or MTJ multilayer film or this hard iron magnetosphere in the two has the pinning structure.
According to another aspect of the present invention, a kind of mram memory cell that comprises above-mentioned magnetoresistance effect is provided.
According to a further aspect of the invention, a kind of wiring method according to above-mentioned mram memory cell is provided, wherein, write current passes the GMR multilayer film of exposure and realizes writing of data.
In above-mentioned wiring method, said write current is greater than the required critical current of upset free layer magnetic moment.
According to a further aspect of the invention, a kind of reading method according to above-mentioned mram memory cell is provided, wherein, read current passes the intact part of GMR multilayer film and MTJ multilayer film in the said magnetoresistance effect, realizes reading of data.
Compare with prior art, write owing to adopting the very little all-metal GMR effect of resistance to tie in the mram memory cell of the present invention, so the energy consumption of device is low, power is little; In addition, adopt the read-write separated structures, help to protect the magnetoresistance effect of big resistance to be difficult in operation being damaged.
Description of drawings
Followingly the embodiment of the invention is described further with reference to accompanying drawing, wherein:
Fig. 1 is the physical principle synoptic diagram of spin transfer torque effect among the present invention;
Fig. 2 is the structural drawing of magnetoresistance effect of the present invention under original state;
Fig. 3 A is a kind of configuration of magnetoresistance effect of the present invention;
Fig. 3 B is the another kind of configuration of magnetoresistance effect of the present invention;
Fig. 4 A and 4B are based on the synoptic diagram of magnetoresistance effect when writing low " 0 ", high " 1 " resistance state of being processed ferromagnetic layer by the intra-face anisotropy material;
Fig. 4 C and 4D are based on the synoptic diagram of magnetoresistance effect when writing low " 0 ", high " 1 " resistance state of being processed ferromagnetic layer by the perpendicular magnetic anisotropy material;
Fig. 5 A is the simplified structure diagram of the magnetoresistance effect of the exemplary mram memory cell of the present invention;
Fig. 5 B, 5C are respectively the vertical sectional views that dissects with complete magnetoresistance effect of GMR multilayer film along the mram memory cell of Fig. 5 A;
Fig. 5 D is the simplified structure diagram of the mram memory cell of Fig. 5 A;
Fig. 6 A is the simplified structure diagram of the magnetoresistance effect of another exemplary mram memory cell of the present invention;
Fig. 6 B is along having the sectional view that complete magnetoresistance effect part is vertically dissectd in the mram memory cell of Fig. 6 A;
Fig. 6 C is along the vertical sectional view that dissects of GMR multilayer film part in the mram memory cell of Fig. 6 A with 6D;
Fig. 6 E is the simplified structure diagram of the mram memory cell of Fig. 6 A.
Embodiment
Generally speaking; The present invention is based on and when electric current passes free layer (being the layer that magnetic moment can rotate freely), produces the spin transfer torque effect; This effect can make the magnetic moment of free layer overturn, thereby the physical mechanism of realizing the read-write operation of storage unit is conceived.The physical principle of spin transfer torque effect is referring to shown in Figure 1; Its principle is: when electric current is flowed through the free layer of (promptly passing) magnetoresistance effect; Because the conduction electron in the spin polarized current can shift the magnetic moment to the free layer of spin polarized current process to spin angular momentum, thereby causes the precession or the upset of its magnetic moment, particularly; As electric current (area of Ic=jc * magnetoresistance effect storage unit, the j of current density greater than the required critical current density Ic of upset magnetic moment
c=2 * 10
6～1 * 10
8A/cm2) time, the spin transfer torque that is produced is enough big, makes the magnetic moment of free layer to be reversed.
In magnetoresistance effect of the present invention, comprise the GMR multi-layer film structure and MTJ (MTJ) multi-layer film structure that is used to produce tunneling magnetic resistance (TMR) effect that are used to produce giant magnetoresistance (GMR) effect.In the present invention; Make the GMR multi-layer film structure expose a part; Like this, when electric current process GMR multi-layer film structure, can the magnetic moment of free layer in this GMR multi-layer film structure (referring to the rotatable magnetosphere of magnetic moment) be overturn through producing the spin transfer torque effect; Can drive simultaneously the magnetic moment that opposite side has free layer in the complete multi-layer film structure and overturn, reach thus and write purpose.Different with traditional multi-layer film structure, electric current needn't pass through whole magnetoresistance effect, and the GMR multilayer film part that only need pass through magnetoresistance effect, thereby avoided the bigger mtj structure of resistance, the power consumption of device is reduced greatly.
In exemplary magnetic multilayer film of the present invention; Comprise GMR multi-layer film structure and MTJ multi-layer film structure; As shown in Figure 2; The MTJ multilayer film comprises the top by pinned ferromagnetic layer PL, insulation course I and free layer FL, and the GMR multilayer film comprises free layer FL, non-magnetic metal layer M and bottom by pinned ferromagnetic layer PL, and these two kinds of multi-layer film structures are the free layer FL of shared centre all.In one case, can remove a part of above-mentioned magnetoresistance effect, promptly remove FL layer above a part of PL and I layer, the part of this FL layer is come out, obtain the configuration A shown in Fig. 3 A; At this moment, let write current I pass the FL layer of this expose portion, make this FL layer magnetic moment upset according to the spin transfer torque effect, this magnetic moment upset drives the not magnetic moment upset of expose portion FL simultaneously, has realized write operation.Perhaps, under another situation, remove a plurality of parts of magnetoresistance effect; Such as two parts; Make the GMR multi-layer film structure that exposes spaced apart by these remainders, the configuration B shown in Fig. 3 B, wherein in two positions of FL layer with PL and the two-layer removal of I; Thereby the GMR multi-layer film structure of these two positions is come out, and the magnetoresistance effect between this between the two remains complete.In this case, the write current that is fed can have two, I ' as shown in the figure and I ", perhaps more.This advantage that can have the structure of many write currents is conspicuous, and it has not only reduced the current density of every write current, and can the magnetic moment upset is more prone to through controlling a plurality of electric currents, has improved reversal rate, is a kind of optimal way.
Should be appreciated that; Free layer in the above-mentioned magnetoresistance effect is processed (therefore " free layer " is also referred to as " ferromagnetic layer ") by ferrimagnet usually; This ferrimagnet can have level (or be called " face in ") or vertical magnetocrystalline anisotropy, should be selected for use the material that has magnetocrystalline anisotropy of the same race with free layer by the pinned ferromagnetic layer when therefore using.Fig. 4 A and 4B are based on the synoptic diagram of magnetoresistance effect when writing low " 0 ", high " 1 " resistance state that ferromagnetic layer is processed by the intra-face anisotropy material, and Fig. 4 C and 4D are based on the synoptic diagram of magnetoresistance effect when writing low " 0 ", high " 1 " resistance state that ferromagnetic layer is processed by the perpendicular magnetic anisotropy material.Among Fig. 4 A, before writing, ferromagnetic layer magnetic moment direction (dotted arrow direction) is pushed up the magnetic moment (solid arrow direction) of pricking ferromagnetic layer with the bottom and is antiparallel; But after feeding write current e-; Produced the said spin transfer torque effect in front, thereby made free layer magnetic moment overturn (for example, like along clockwise direction the upset of figure shown in the A); The magnetic moment direction of the two is become, and (just) is parallel; Realized write (be to be low resistance state when defining in the same way, promptly signal " 0 " then is " 1 " when reverse) of " 0 ".Similarly, in Fig. 4 B, feed before the electric current, it is parallel that the ferromagnetic layer magnetic moment direction is pushed up the magnetic moment of pricking ferromagnetic layer with the bottom; But after feeding electric current e-, the ferromagnetic layer magnetic moment overturns, and makes the two become antiparallel, thereby realizes writing of " 1 ".Different with the magnetic moment direction of anisotropic material in the dotted arrow presentation surface among Fig. 4 A and the 4B; Dotted arrow among Fig. 4 C and Fig. 4 D is represented the direction of magnetic moment in the material of perpendicular magnetic anisotropy; Its write operation is identical with the situation of anisotropic material in the face on implementation, so repeat no more here.
Should be appreciated that; Because what GMR in the above-mentioned magnetoresistance effect and MTJ multi-layer film structure all adopted is the pinning structure; Should comprise that also the top pricks layer, promptly also the top pinning layer should be arranged on by pinned magnetic, also should be had the top, bottom to prick layer in the bottom under the pinned magnetic at the top; Yet, they are omitted in order clearly to illustrate core layer of the present invention.In addition; Also be to be understood that to those skilled in the art; This pinning structure is not necessary, can produce other GMR multi-layer film structures of GMR effect, and other MTJ multi-layer film structures that can produce the TMR effect also can be realized the object of the invention; For example the GMR multi-layer film structure can comprise ferromagnetic layer, metal level and hard iron magnetosphere, and the MTJ multi-layer film structure can comprise magnetosphere, insulation course and ferromagnetic layer etc.
Be that magnetoresistance effect of the present invention is applied to the example in the storage unit of magnetic RAM (MRAM) below.
Example 1: based on the mram memory cell of the magnetoresistance effect of configuration A
Fig. 5 A is the simplified structure diagram of the magnetoresistance effect of the exemplary mram memory cell of the present invention, its show the read-write electric current magnetoresistance effect of flowing through and on a part.As can be seen from the figure, magnetoresistance effect adopts the configuration A that mentions in the preamble, therefore has only a write current and a read current.Wherein, write current flow through write bit line BL1 (2f), via (3d), transition metal layer (2e) and GMR multilayer film part, sense bit line BL2 (2g), via (3d) and complete magnetoresistance effect part and read current is flowed through.This magnetoresistance effect comprise comprise from top to bottom top pinning layer (not shown), top by pinned magnetic PL, insulation course I, free layer FL, non-magnetic metal layer M, bottom by pinned magnetic PL and bottom pinning layer (not shown).
Fig. 5 B, 5C are respectively the vertical sectional views that dissects with complete magnetoresistance effect of GMR multilayer film along the mram memory cell of Fig. 5 A.From these two figure, can find out; The whole M ram memory cell comprises a layer 1a, 1b, 1c, 1d, 1e; Wherein metal wiring layer have two-layer, i.e. write bit line BL1 (2f) and sense bit line BL2 (2g) place layer 1d, and ground wire GND (2b) and transition metal layer TM (2c) place layer 1b.Two bit lines BL1 (2f), BL2 (2g) are arranged in the top of magnetoresistance effect ML (5), bury medium through insulation each other and separate, and the two is vertical each other with word line (2a).
Magnetoresistance effect ML (5) be arranged in write bit line BL1 (2f), sense bit line BL2 (2g) under; Wherein GMR multilayer film part links to each other through transition metal layer (2e), metal conduction hole (3d) with write bit line BL1 (2f), and complete magnetoresistance effect part links to each other with sense bit line BL1 (2g) through metal contact hole (3d) with sense bit line BL2 (2g).Magnetoresistance effect ML (5) bottom links to each other with transistor drain (0b) through transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), and ground wire GND (2b) links to each other with transistorized source electrode (0a) through contact hole (3a).Word line (2a) is the grid (0c) of said transistor (0), and the non-functional area in these layers is buried medium such as SiO by insulation
2Deng burying.For the ease of understanding, the structural representation after this mram memory cell is simplified can be referring to Fig. 5 D.
In the addressing read operation of MRAM; At first providing a suitable level by selecteed word line WL (2a) makes transistor T R (0) work in conducting state; Correspondingly derive a read current by selecteed sense bit line BL2 (2g) then, this read current is less than critical current I
c(I
c=j
cThe whole area of * magnetoresistance effect, j
c=1 * 10
2～1 * 10
4A/cm
2); Arrive ground wire GND (2b) via the source electrode (0a) of the drain electrode (0b) of the intact part (being GMR multilayer film+MTJ multilayer film part) of contact hole (3d), magnetoresistance effect ML (5), transition metal layer TM (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a); Thereby obtain the current magnetized state of bit-level (being free layer) of magnetoresistance effect ML (5), promptly obtain the data of storing in the mram memory cell.
In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL (2a), derive one greater than a certain critical current I by selecteed write bit line BL2 (2f) then
cElectric current (I
c=j
cThe area of * magnetoresistance effect storage unit, j
c=2 * 10
6～1 * 10
8A/m
2); GMR multilayer film part (promptly producing GMR giant magnetoresistance effect part) via contact hole (3d), transition metal layer TM (2e), arrival magnetoresistance effect ML (5); When this electric current passes the GMR multilayer film; Spin transfer torque effect through producing can be so that the magnetic moment of the free layer in the GMR multilayer film part overturns, and electric current then arrives ground wire GND (2b) through transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) like this.Be applied to the direction of current on the write bit line BL1 (2f) through change; Just can realize the parallel and antiparallel of free layer magnetic moment in the GMR multilayer film part of ML (5); And then drive the upset of magnetic moment of the free layer of complete magnetoresistance effect part (being GMR multilayer film+MTJ multilayer film part); Promptly realize the variation of its high low resistance state, so just accomplished writing the mram memory cell data.
In this example; Write bit line BL1 (2f) partly links to each other with the GMR multilayer film of said magnetoresistance effect ML (5) through metal contact hole (3d), transition metal layer 2e; Yet this only as one schematically for example; Other can make write current pass the GMR multilayer film and then all can use at this based on the overturn multi-layer film structure of free layer magnetic moment of spin transfer torque effect, for example below mram memory cell described in example 2.
Example 2: based on the mram memory cell of the magnetoresistance effect of configuration B
Fig. 6 A is the simplified structure diagram of the magnetoresistance effect of another exemplary mram memory cell of the present invention, wherein show the read-write electric current magnetoresistance effect of flowing through and on a part.As can be seen from the figure, the magnetoresistance effect in this storage unit adopts the configuration B that mentions in the preceding text, therefore correspondingly has two write currents and a read current.Wherein, Two write currents flow through respectively write bit line BL1 (2f) and BL3 (2h); GMR multilayer film part through via (3d), transition metal layer (2e) and magnetoresistance effect then, and read current flow through sense bit line BL2 (2g), via (3d) and complete magnetoresistance effect part.Each of this magnetoresistance effect is layer identical with example 1, repeats no more here.
Fig. 6 B is along having the sectional view that complete magnetoresistance effect part is vertically dissectd in the mram memory cell of Fig. 6 A.Fig. 6 C is along the vertical sectional view that dissects of GMR multilayer film with 6D.Similar with mram memory cell in the example 1, the whole M ram memory cell comprises a layer 1a, 1b, 1c, 1d, 1e, wherein metal wiring layer have two-layer, 1d and 1b.Different is, in the 1d layer, is provided with two write bit lines, i.e. write bit line BL1 (2f) and BL3 (2h), and a sense bit line BL2 (2g).Similarly, this three bit lines is arranged in the top of magnetoresistance effect ML (5), bury medium through insulation each other and separate, and the three is vertical each other with word line (2a).For the ease of understanding, the structural representation after this mram memory cell is simplified can be referring to Fig. 6 E.
In the addressing read operation of MRAM; At first providing a suitable level by selecteed word line WL (2a) makes transistor T R (0) work in conducting state; Correspondingly derive a read current by selecteed sense bit line BL2 (2g) then, this read current is less than critical current I
c(I
c=j
cThe area of * magnetoresistance effect storage unit, j
c=1 * 10
2～1 * 10
4A/cm
2); Arrive ground wire GND (2b) via the source electrode (0a) of the drain electrode (0b) of the intact part (being GMR multilayer film+MTJ multilayer film part) of contact hole (3d), magnetoresistance effect ML (5), transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), transistor T R (0), transistor T R (0), contact hole (3a); Thereby obtain the current magnetized state of the free layer of magnetoresistance effect ML (5), promptly obtain the data of storing in the mram memory cell.
In the addressing write operation of MRAM, at first provide a suitable level and make transistor T R (0) work in conducting state by selecteed word line WL (2a), derive one simultaneously greater than a certain critical current I by selecteed write bit line BL1 (2f), BL3 (2h) then
cElectric current (I
c=j
cThe area of * magnetoresistance effect storage unit, j
c=2 * 10
6～1 * 10
8A/cm
2); Via contact hole (3d), transition metal layer (2e); Arrive the GMR multilayer film part of magnetoresistance effect ML (5); Electric current can be so that the magnetic moment of GMR multilayer film part ferromagnetic layer overturns through the spin transfer torque effect, and electric current then arrives ground wire GND (2b) through transition metal layer (2d), contact hole (3c), transition metal layer TM (2c), contact hole (3b), the drain electrode (0b) of transistor T R (0), the source electrode (0a) of transistor T R (0), contact hole (3a) like this.Be applied to the direction of current on write bit line BL1 (2f), the BL3 (2h) through change; Just can realize in the GMR multilayer film part the parallel and antiparallel of magnetic moment in the free layer; Advance you and drive the upset of the magnetic moment of complete magnetoresistance effect free layer partly; Promptly realize the variation of its high low resistance state, so just accomplished writing the mram memory cell data.
In the present invention, the xsect of magnetoresistance effect is preferably rectangle or ellipse.To the storage unit that an end writes, the width of rectangle is between 20～200nm, and the ratio of width and length is 1: 4～1: 5; Oval-shaped minor axis can be between 20～200nm, and the ratio of minor axis and major axis can be 1: 4～1: 5.And the storage unit that two ends are write, the width of rectangle is between 20～200nm, and the ratio of width and length is 1: 5～1: 6; Oval-shaped minor axis can be between 20～200nm, and the ratio of minor axis and major axis can be 1: 5～1: 6.Above-mentioned condition is the shape anisotropy that keeps knot to be had for better, makes it be prone to axle and is long axis direction.
In the present invention, the material that is used for GMR and each layer of MTJ multi-layer film structure has been as well known to those skilled in the art, includes but not limited to following example:
1) antiferromagnetic pinning layer: Ir for example
22Mn
78, Fe
50Mn
50, Pt
50Mn
50, Cr
50Mn
50, Cr
50Pt
50, NiO or CoO etc.;
2) insulation course I is processed by insulating material, for example AlO
x, MgO, Al
1-xGa
xAs, GaAs, In
1-xGa
xAs, Al
1-xIn
xAs, GaN, CdS, CaMnO
3, NaCl, TiO
2, HfO
2, ZrO, AlN, SrTiO
3Or such as pyrroles, plug phenol, Alq
3The organic material of (8-hydroxyquinoline aluminum), mono-layer graphite, indefiniteness charcoal etc.;
3) ferromagnetic layer FL and PL comprise:
The material of intra-face anisotropy: transition metal, transistion metal compound and containing transition metal compound, for example: Fe, Co, Ni or their alloy Co
1-x-yFe
xB
y(wherein 0＜x＜1,0＜y≤0.2); And magnetic semiconductor, for example: Ga
1-xMn
xAs (wherein 0＜x＜0.2), Zn
1-xMn
xO (wherein 0＜x＜0.2), Ga
1-xMn
xN (wherein 0＜x＜0.2), Ga
1-xMn
xP (wherein 0＜x＜0.2), Ti
1-xCo
xO (wherein 0＜x＜0.2); (La
1-xA
x) MnO
3(A represents divalent alkaline-earth metal Elements C a, Sr, Ba, wherein 0.2＜x＜0.4), Fe
3O
4Deng;
Perpendicular magnetic anisotropy material: Fe-Pt alloy for example, Co-Ni alloy, Co-Pt alloy, Co-Pd alloy, Gd-Fe-Co alloy, Tb-Fe-Co alloy etc.;
Semi-metallic: Co for example
2FeAl, Co
2MnSi, Co
2MnGe, Co
2MnGa, Co
2Cr
0.6Fe
0.4Al, Co
2FeSi, Co
2FeSiB, Ni
2MnSb, Pt
2MnSb etc.
4) non-magnetic metal layer M is processed by nonmagnetic material, for example Cu, Cr, Zn, Ti, Mn, V, Sc, Ta, Ag, Ru or Au etc.;
5) for the ferromagnetic layer of no pinning structure, hard iron magnetosphere is wherein processed by rare earth metal or its compound usually, for example Nd
2Fe
14B, SmCo
5, SmCo
17, Sm
2(Fe, Co)
17N
3, NdFeTN
x(T=Ti, V, Mo) etc.
Because the present invention has used the GMR multilayer film partly to write; Its all-metal junction resistance is little; Help satisfying MAGNETIC RANDOM ACCESS MEMORY low energy consumption and low power requirement; And can effectively avoid storage unit to write fashionable the cause damage of potential barrier and the inefficacy of storage unit in that high-density current is unlimited repeatedly, reach long-life purpose.And data are only utilized little electric current to carry out reading of data through MTJ and can be guaranteed that data storage cell is not damaged by tunnelling current when reading.
Should be appreciated that the various variations of magnetoresistance effect are suitable for the magnetoresistance effect in the mram memory cell equally.Although the present invention is made specific descriptions with reference to the above embodiments; But for the person of ordinary skill of the art; Should be appreciated that and to make amendment based on content disclosed by the invention within spirit of the present invention and the scope or improve not breaking away from, these modifications and improving all within spirit of the present invention and scope.
Claims (10)
1. magnetoresistance effect that is used for MRAM; This magnetoresistance effect comprises the MTJ multilayer film and the GMR multilayer film that is used to produce the GMR effect that is positioned at below this MTJ multilayer film that is used to produce the TMR effect; Wherein MTJ multilayer film and the shared free layer of GMR multilayer film is characterized in that:
At least a portion adjacent to MTJ multilayer film one side of said GMR multilayer film is exposed, the electric current that passes this expose portion said free layer magnetic moment that is used to overturn.
2. magnetoresistance effect according to claim 1 is characterized in that, said GMR multilayer film exposes a plurality of parts, and these a plurality of parts are spaced to one another.
3. magnetoresistance effect according to claim 1 is characterized in that, said GMR multilayer film exposes a part.
4. magnetoresistance effect according to claim 1 is characterized in that, the ferromagnetic layer of said free layer for being processed by ferrimagnet, this ferrimagnet have level or vertical magnetocrystalline anisotropy.
5. magnetoresistance effect according to claim 4 is characterized in that, said GMR multilayer film comprise hard iron magnetosphere, non-magnetic metal layer and shared ferromagnetic layer, said MTJ multilayer film comprise shared ferromagnetic layer, insulation course and hard iron magnetosphere.
6. magnetoresistance effect according to claim 5 is characterized in that, said GMR multilayer film or MTJ multilayer film or this hard iron magnetosphere in the two has the pinning structure.
7. a mram memory cell is characterized in that, comprises each described magnetoresistance effect in the claim 1 to 6.
8. the wiring method according to the said mram memory cell of claim 7 is characterized in that, write current passes the GMR multilayer film of exposure and realizes writing of data.
9. method according to claim 8 is characterized in that, said write current is greater than the required critical current of upset free layer magnetic moment.
10. the reading method of a mram memory cell according to claim 7 is characterized in that, read current passes the intact part of GMR multilayer film and MTJ multilayer film in the said magnetoresistance effect, realizes reading of data.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI259558B (en) * | 2004-11-11 | 2006-08-01 | Nat Changhua University Of Edu | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN101079469A (en) * | 2006-05-26 | 2007-11-28 | 中国科学院物理研究所 | MgO dual-potential magnetic tunnel structure with quanta effect and its purpose |
| CN101221849A (en) * | 2007-01-09 | 2008-07-16 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI259558B (en) * | 2004-11-11 | 2006-08-01 | Nat Changhua University Of Edu | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN101079469A (en) * | 2006-05-26 | 2007-11-28 | 中国科学院物理研究所 | MgO dual-potential magnetic tunnel structure with quanta effect and its purpose |
| CN101221849A (en) * | 2007-01-09 | 2008-07-16 | 中国科学院物理研究所 | Magnetic multilayer film with geometrical shape and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105931662A (en) * | 2016-04-18 | 2016-09-07 | 北京航空航天大学 | Light control-based organic spin memory cell |
| CN105931662B (en) * | 2016-04-18 | 2018-08-28 | 北京航空航天大学 | A kind of organic spin storage unit based on light regulation and control |
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