CN102358700A - Sintering process for producing ZrTi system microwave dielectric ceramic material - Google Patents
Sintering process for producing ZrTi system microwave dielectric ceramic material Download PDFInfo
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- CN102358700A CN102358700A CN2011102270105A CN201110227010A CN102358700A CN 102358700 A CN102358700 A CN 102358700A CN 2011102270105 A CN2011102270105 A CN 2011102270105A CN 201110227010 A CN201110227010 A CN 201110227010A CN 102358700 A CN102358700 A CN 102358700A
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Abstract
The invention provides a sintering process for producing a ZrTi system microwave dielectric ceramic material. After sintering, a heat treatment procedure is performed, and in the heat treatment procedure, the heat treatment temperature is 1,000 to 1,100DEG C, and the temperature keeping time is 4 to 8 hours. The ZrTi system microwave dielectric ceramic material prepared by the sintering process has the Q value of more than 9,000, and the electric property is greatly improved.
Description
Technical field
The invention belongs to the stupalith field, specifically be meant a kind of sintering process that is used to produce ZrTi system microwave dielectric ceramic materials.
Background technology
Micro-wave communication is one of modernized important communication means, and along with the fast development of micro-wave communication, the research of microwave dielectric ceramic materials comes into one's own day by day.The common requirement of microwave dielectric ceramic materials is: (1) proper dielectric constant; (2) high quality factor, low dielectric loss; (3) nearly zero adjustable temperature coefficient of resonance frequency.As the base mateiral in the modern communication technology, microwave dielectric ceramic material can be processed microwave devices such as dielectric resonator, dielectric filter, duplexer, microwave-medium antenna, dielectric resonator oscillator, Medium Wave Guide transmission line.These devices are widely used in various fields such as mobile communication, satellite television broadcasting communication, radar, NAVSTAR.
The microwave dielectric ceramic materials of ZrTi system is one type of application microwave dielectric ceramic materials very widely.But the electric property of the ZrTi system microwave dielectric ceramic materials that existing sintering process is produced is outstanding inadequately.
Summary of the invention
The objective of the invention is provides a kind of sintering process that is used to produce ZrTi system microwave dielectric ceramic materials according to above-mentioned deficiency, and this technology can improve the electric property of ZrTi system microwave dielectric ceramic materials.
The present invention realizes in the following manner: a kind of sintering process that is used to produce ZrTi system microwave dielectric ceramic materials; It is characterized in that: said sintering process also includes heat treatment step after sintering is accomplished; The thermal treatment temp of said heat treatment step is 1000-1100 ℃, and soaking time is 4-8 hour.
Optimum, heat treated temperature is 1050 ℃, thermal treatment soaking time 6 hours.
The sintering temperature of said sintering process is 1370-1410 ℃, and the sintered heat insulating time is 8-12 hour.
The sintering temperature rise rate of said sintering process is 70-80 ℃/hour.
Optimum, the sintering temperature of sintering process is 1380 ℃.
Optimum, the sintered heat insulating time is 8 hours.
The present invention has added heat treated operation after existing sintering process finishes, and has controlled temperature rise rate, sintering temperature and sintered heat insulating time.With the ZrTi system microwave dielectric ceramic materials that sintering process of the present invention obtains, the Q value can reach more than 9000, has obtained on the electric property improving greatly.
Embodiment
Below further specify process method of the present invention through specific embodiment:
1. embodiment 1-9 is when ZrTi system microwave dielectric ceramic materials is carried out sintering, and fixedly the soaking time after the temperature rise rate and the arrival sintering temperature that heats up changes sintering temperature, and the performance of the microwave dielectric ceramic materials that obtains is as shown in table 1.
The sintering process of the different sintering temperatures of table 1 obtains the performance of material
Can find out that from table 1 sintering temperature can be 1370-1410 ℃, optimum is 1380 ℃.
2. embodiment 10-29 is when ZrTi system microwave dielectric ceramic materials is carried out sintering, and fixedly sintering temperature changes the soaking time after temperature rise rate and intensification arrive sintering temperature, and the performance of the microwave dielectric ceramic materials that obtains is as shown in table 2.
The sintering process of different temperature rise rates of table 2 and soaking time obtains the performance of material
Can find out that from table 2 the sintering temperature rise rate of sintering process is 70-80 ℃/hour, be preferably 75 ℃/hour.The soaking time of sintering process is 8-12 hour, is preferably 8 hours.
3. embodiment 30-47 after ZrTi system microwave dielectric ceramic materials sintering circuit is finished, cools to different thermal treatment temps, heat-treats operation through different thermal treatment soaking times, and the performance of the microwave dielectric ceramic materials that obtains is as shown in table 3.
The sintering process of table 3 different heat treatment temperature and soaking time obtains the performance of material
Can find out that from table 3 heat treated thermal treatment temp is 1000-1100 ℃, be preferably 1050 ℃.Heat treated soaking time is 4-8 hour, is preferably 6 hours.
With the ZrTi system microwave dielectric ceramic materials that sintering process of the present invention obtains, the Q value can be got to more than 9000, is higher than the 8500-8800 of prior art, and electric property improves greatly.
Claims (6)
1. sintering process that is used to produce ZrTi system microwave dielectric ceramic materials; It is characterized in that: said sintering process also includes heat treatment step after sintering is accomplished; The thermal treatment temp of said heat treatment step is 1000-1100 ℃, and soaking time is 4-8 hour.
2. according to the said sintering process that is used to produce ZrTi system microwave dielectric ceramic materials of claim 1, it is characterized in that: said heat treated temperature is 1050 ℃, thermal treatment soaking time 6 hours.
3. according to the said sintering process that is used to produce ZrTi system microwave dielectric ceramic materials of claim 1, it is characterized in that: the sintering temperature of said sintering process is 1370-1410 ℃, and the sintered heat insulating time is 8-12 hour.
4. according to the said sintering process that is used to produce ZrTi system microwave dielectric ceramic materials of claim 1, it is characterized in that: the sintering temperature rise rate of said sintering process is 70-80 ℃/hour.
5. according to the said sintering process that is used to produce ZrTi system microwave dielectric ceramic materials of claim 3, it is characterized in that: the sintering temperature of said sintering process is 1380 ℃.
6. according to the said sintering process that is used to produce ZrTi system microwave dielectric ceramic materials of claim 3, it is characterized in that: the said sintered heat insulating time is 8 hours.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102270105A CN102358700A (en) | 2011-08-09 | 2011-08-09 | Sintering process for producing ZrTi system microwave dielectric ceramic material |
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| CN2011102270105A CN102358700A (en) | 2011-08-09 | 2011-08-09 | Sintering process for producing ZrTi system microwave dielectric ceramic material |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527749A (en) * | 1994-01-11 | 1996-06-18 | Korea Institute Of Science And Technology | Dielectric ceramic composition for high frequencies and method for preparation of the same |
| CN101343178A (en) * | 2008-08-14 | 2009-01-14 | 广东风华高新科技股份有限公司 | (ZrSnZnNb)TiO4 microwave ceramic dielectric material and preparation thereof |
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2011
- 2011-08-09 CN CN2011102270105A patent/CN102358700A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527749A (en) * | 1994-01-11 | 1996-06-18 | Korea Institute Of Science And Technology | Dielectric ceramic composition for high frequencies and method for preparation of the same |
| CN101343178A (en) * | 2008-08-14 | 2009-01-14 | 广东风华高新科技股份有限公司 | (ZrSnZnNb)TiO4 microwave ceramic dielectric material and preparation thereof |
Non-Patent Citations (2)
| Title |
|---|
| DAVID HOUIVET ET AL: "Effect of annealing on the microwave properties of (Zr,Sn)TiO4 ceramics", 《JOURNAL OF THE EUROPEAN CERAMIC SOCIETY》, 31 December 2001 (2001-12-31), pages 1727 - 1730 * |
| 高朋召 等: "( Zr1-xSnx)TiO4(ZST）微波介质陶瓷制备技术及其应用的研究进展", 《陶瓷学报》, vol. 28, no. 4, 31 December 2007 (2007-12-31), pages 321 - 329 * |
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Application publication date: 20120222 |