CN102353883A - High temperature aging device for microwave transistor - Google Patents
High temperature aging device for microwave transistor Download PDFInfo
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- CN102353883A CN102353883A CN2011101580208A CN201110158020A CN102353883A CN 102353883 A CN102353883 A CN 102353883A CN 2011101580208 A CN2011101580208 A CN 2011101580208A CN 201110158020 A CN201110158020 A CN 201110158020A CN 102353883 A CN102353883 A CN 102353883A
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Abstract
The invention discloses a high temperature aging device for a microwave transistor. The high temperature aging device comprises an aluminum shell, a lower ceramic substrate, two L-shaped copper columns and an upper ceramic substrate, wherein the upper ceramic substrate, the two L-shaped copper columns and the lower ceramic substrate are put into the aluminum shell sequentially from top to bottom; the two L-shaped copper columns are arranged in a groove between the upper ceramic substrate and the lower ceramic substrate; and two long arms of the two L-shaped copper columns extend out of two square holes in the front wall of the aluminum shell respectively and are used as transistor lead-out electrodes. In the whole design, all adopted materials have high temperature resistance; a high temperature lead wire is connected with a peripheral circuit, so a circuit board can be prevented from being heated; therefore, a high acceleration life test at temperature of over 400 DEG C can be realized.
Description
Technical field
The present invention relates to a kind of electron device high temperature aging device, especially a kind of split type microwave transistor high temperature aging device.
Background technology
Accelerated life test is under the prerequisite that does not change product failure mechanism; Utilize the method that strengthens stress to accelerate the aging of product; Thereby obtain the fail message of product at short notice; And then predict its life characteristics under normal stress, be the effective means of quick counting yield life-span and evaluate long term dependability.
Microwave transistor is relatively more responsive to temperature stress, and generally adopting with temperature is the accelerated life test of main stress.The silicon device rated junction temperature is 175 ℃, and the step stress test in the accelerated life test can be increased to junction temperature 400 ℃, and corresponding case temperature also surpasses 300 ℃, therefore needs to bear the high temperature aging anchor clamps above 300 ℃.
Conventional ageing device is that measured device is packed in the size suitable plastic mould, through mould with the electrode of device draw with PCB on peripheral circuit be connected, and device is fixed.This device is owing to be incorporated into mould of plastics, epoxy plate and components and parts together, and these materials can't bear high temperature, only are applicable to the normal temperature ageing.Therefore ageing device becomes the bottleneck of accelerated life test.
Summary of the invention
The technical matters that the present invention will solve provides a kind of resistant to elevated temperatures split type microwave transistor high temperature aging device.
For solving the problems of the technologies described above, the technical scheme that the present invention taked is:
A kind of split type microwave transistor high temperature aging device is characterized in that: comprise aluminium shell, following ceramic substrate, two L type copper posts and last ceramic substrate; Have vertical anti-self-excitation groove on the left and right sides wall of said aluminium shell; The antetheca of said aluminium shell be provided with two with the suitable square opening of said L type copper post; Be provided with a threaded hole between said two square holes; Inner bottom surface at said aluminium shell is provided with a bearing onesize with the microwave triode base that project upwards;
The upper surface of said down ceramic substrate is provided with two L type first grooves with the suitable relative discharging of two L type copper posts; Position between the said first groove galianconism be provided with one with the first suitable fixed orifice of bearing;
The said lower surface of going up ceramic substrate is provided with respectively and said first groove and corresponding second groove of said first fixed orifice and second fixed orifice; The long arm end top of said two L type copper posts is respectively equipped with a through hole that is connected with external circuit;
Said ceramic substrate, two L type copper posts and the following ceramic substrate gone up is positioned in the aluminium shell from top to bottom successively; Said two L type copper posts are placed in first groove and second groove between ceramic substrate and the following ceramic substrate; Two of said two L type copper posts are long-armed to stretch out two square openings from said aluminium shell antetheca respectively.
Adopt the beneficial effect that technique scheme produced to be:
1, have vertical groove on the left and right sides wall of aluminium shell, can be in case self-excitation.
2, the material of The whole design all can be high temperature resistant, and aluminum hull is positioned on the heating platform, carries out the integral body heating.
3, adopt the branch body structure, adopt high temperature wire to be connected with peripheral circuit, high temperature wire on the copper post, avoids circuit board to be heated through screw retention.
4, can carry out the Highly Accelerated Life Test more than 400 ℃.
Description of drawings
Fig. 1 is a structure exploded perspective view of the present invention.
1 is that aluminium shell 2 is that ceramic substrate 3 is to prevent that self-excitation groove 6 is that first groove 10 be first fixed orifice 11 second grooves 12 be second fixed orifice 13 through holes for threaded hole 8 for bearing 9 for square opening 7 for L type copper post 4 for last ceramic substrate 5 down.
Embodiment
A kind of microwave transistor high temperature aging device is characterized in that: comprise aluminium shell 1, down ceramic substrate 2, two L type copper posts 3 and last ceramic substrates 4; Have vertical anti-self-excitation groove 5 on the left and right sides wall of said aluminium shell 1; The antetheca of said aluminium shell 1 be provided with two with the suitable square opening 6 of said L type copper post 3; Be provided with a threaded hole 7 between said two square openings 6; Inner bottom surface at said aluminium shell is provided with the bearing 8 that project upwards and the microwave triode base is onesize;
The upper surface of said down ceramic substrate 2 is provided with two L types, first groove 11 with the suitable relative discharging of two L type copper posts 3; Position between said first groove, 11 galianconism be provided with one with the first suitable fixed orifice 10 of bearing 8;
The said lower surface of going up ceramic substrate 4 is provided with respectively and said first groove 9 and said first fixed orifice, 10 corresponding second groove 11 and second fixed orifices 12; The long arm end top of said two L type copper posts 3 is respectively equipped with a through hole that is connected with external circuit 13;
Said ceramic substrate 4, two L type copper posts 3 and the following ceramic substrate 2 gone up is positioned in the aluminium shell 1 from top to bottom successively; Said two L type copper posts 3 are placed in first groove 9 and second groove 11 between ceramic substrate 4 and the following ceramic substrate 2; Two of said two L type copper posts 3 are long-armed to stretch out two square openings 6 from said aluminium shell antetheca respectively.
Claims (2)
1. a microwave transistor high temperature aging device is characterized in that: comprise aluminium shell (1), following ceramic substrate (2), two L type copper posts (3) and last ceramic substrate (4); Have vertical anti-self-excitation groove (5) on the left and right sides wall of said aluminium shell (1); The antetheca of said aluminium shell (1) be provided with two with the suitable square opening (6) of said L type copper post (3); Be provided with a threaded hole (7) between said two square openings; Inner bottom surface at said aluminium shell (1) is provided with a bearing onesize with the microwave triode base that project upwards (8);
The upper surface of said down ceramic substrate (2) is provided with two L type first grooves (9) with the suitable relative discharging of two L type copper posts (3); Position between said first groove (9) galianconism be provided with one with suitable first fixed orifice (10) of bearing (8);
The said lower surface of going up ceramic substrate (4) is provided with respectively and said first groove (9) and corresponding second groove of said first fixed orifice (10) (11) and second fixed orifice (12); The long arm end top of said two L type copper posts (3) is respectively equipped with a through hole that is connected with external circuit (13);
Said ceramic substrate (4), two L type copper posts (3) and the following ceramic substrate (2) gone up from top to bottom is positioned in the aluminium shell (1) successively; Said two L type copper posts (3) are placed in first groove (9) and second groove (11) between ceramic substrate (4) and the following ceramic substrate (2); Two of said two L type copper posts (3) are long-armed to stretch out two square openings (6) from said aluminium shell (1) antetheca respectively.
2. microwave transistor high temperature aging device according to claim 1 is characterized in that: said hole (7) are unthreaded hole or threaded hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110158020 CN102353883B (en) | 2011-06-14 | 2011-06-14 | High temperature aging device for microwave transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110158020 CN102353883B (en) | 2011-06-14 | 2011-06-14 | High temperature aging device for microwave transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102353883A true CN102353883A (en) | 2012-02-15 |
| CN102353883B CN102353883B (en) | 2013-07-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110158020 Active CN102353883B (en) | 2011-06-14 | 2011-06-14 | High temperature aging device for microwave transistor |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85202316U (en) * | 1985-06-14 | 1986-05-07 | 煤炭工业部煤炭科学研究院南京研究所 | Election device ageing experiment desk |
| CN1887786A (en) * | 2005-11-03 | 2007-01-03 | 韩敏芳 | Submicron transparent crystal alumina ceramic possessing high linear transmittance |
| CN101085855A (en) * | 2006-06-05 | 2007-12-12 | 中国科学院化学研究所 | Ultraviolet and high temperature aging resistant organic silicon epoxy resin composition used for luminescent diode encapsulation |
| CN201107379Y (en) * | 2007-12-03 | 2008-08-27 | 西安理工大学 | Chip type capacitor surge and aging test device |
| CN201796114U (en) * | 2010-07-01 | 2011-04-13 | 江西联创特种微电子有限公司 | High-temperature reverse-bias aging table of long-service life transistor |
| CN202119875U (en) * | 2011-06-14 | 2012-01-18 | 中国电子科技集团公司第十三研究所 | High-temperature aging device for microwave transistor |
-
2011
- 2011-06-14 CN CN 201110158020 patent/CN102353883B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85202316U (en) * | 1985-06-14 | 1986-05-07 | 煤炭工业部煤炭科学研究院南京研究所 | Election device ageing experiment desk |
| CN1887786A (en) * | 2005-11-03 | 2007-01-03 | 韩敏芳 | Submicron transparent crystal alumina ceramic possessing high linear transmittance |
| CN101085855A (en) * | 2006-06-05 | 2007-12-12 | 中国科学院化学研究所 | Ultraviolet and high temperature aging resistant organic silicon epoxy resin composition used for luminescent diode encapsulation |
| CN201107379Y (en) * | 2007-12-03 | 2008-08-27 | 西安理工大学 | Chip type capacitor surge and aging test device |
| CN201796114U (en) * | 2010-07-01 | 2011-04-13 | 江西联创特种微电子有限公司 | High-temperature reverse-bias aging table of long-service life transistor |
| CN202119875U (en) * | 2011-06-14 | 2012-01-18 | 中国电子科技集团公司第十三研究所 | High-temperature aging device for microwave transistor |
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| CN102353883B (en) | 2013-07-10 |
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