CN102353706A - High aspect ratio ultramicro tungsten electrode array and preparation method thereof - Google Patents
High aspect ratio ultramicro tungsten electrode array and preparation method thereof Download PDFInfo
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- CN102353706A CN102353706A CN2011101516095A CN201110151609A CN102353706A CN 102353706 A CN102353706 A CN 102353706A CN 2011101516095 A CN2011101516095 A CN 2011101516095A CN 201110151609 A CN201110151609 A CN 201110151609A CN 102353706 A CN102353706 A CN 102353706A
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Abstract
A high aspect ratio ultramicro tungsten electrode array and a preparation method thereof. The preparation method comprises steps of: first manufacturing copper splints, front baffles, side baffles and a pedestal; fixing the front baffles, the copper splints and the pedestal together; threading tungsten filaments through the front baffles respectively, placing two ends of each tungsten filament in grooves of the copper splints, and binding and fixing the tungsten filaments in the grooves at backs of the copper splints; fixing the copper splints respectively and repeatedly to prepare an m*n tungsten filament array; fixing the side baffles and the pedestal to form a cavity with the front baffles; casting epoxy resin into the cavity, solidifying and trimming the tungsten filaments; and dismounting the side baffles, the copper splints, the front baffles and the pedestal successively to obtain the high aspect ratio m*n ultramicro tungsten electrode array. Compared with other tungsten electrode arrays prepared by other methods, the ultramicro tungsten electrode array prepared by the method of the invention has characteristics of high aspect ratio, high precision, adjustable array, low costs and suitability for batch production.
Description
Technical field
The invention belongs to the micro sensing technical field, be mainly used in aspects such as biology, medical science, galvanochemistry and environmental monitoring, particularly a kind of high-aspect-ratio ultra micro tungsten electrode array that is used for microcell information such as cell and nerve record and electro photoluminescence and preparation method thereof.
Background technology
High-aspect-ratio ultra micro tungsten electrode array and preparation method thereof belongs to micro sensing detection technique field; Be mainly used in aspects such as biology, medical science, galvanochemistry and environmental monitoring, be used in particular for micro-zone analysis, electro photoluminescence brain cell, treatment parkinsonism, repair hearing and eyesight etc.Such electrod-array can be realized the real-time detection to a plurality of target molecules, has improved the selectivity and the sensitivity that detect greatly owing to removed requisite label in chemistry and the immunoassay in its detection simultaneously; Moreover, it can also high flux, microminiaturization, carry out the detection of correlation parameter apace.
The ultramicroelectrode array is combined by specific arrangement architecture by a plurality of ultramicroelectrodes.Compare with single ultramicroelectrode, the ultramicroelectrode array not only can significantly improve the strength of current of detecting signal, can keep the characteristic of single ultramicroelectrode simultaneously again.Technology of preparing is the key of high-aspect-ratio ultramicroelectrode array research, is just receiving the concern of more and more research groups.The Hirokazu Takahashi of Japan carries out Laser Processing to the Kapton on the substrate of glass, obtains specific grid line mask pattern; Use blasting craft etching glass substrate then, forming pitch is 400 μ m, and width is 120 μ m, highly is the grid line structure mold of 120 μ m; Use this mould heat pressure polystyrene again, form the polystyrene groove structure of same physical dimension, and in each groove, insert the tungsten filament of 100 μ m, form individual layer tungsten microelectrode array; At last a plurality of individual layer tungsten microelectrode arrays that obtain are superimposed and carry out hot-formingly, obtaining pitch is the multilayer tungsten microelectrode array of 400 μ m.Owing to adopted hot-pressing technique, and repeatedly used mask pattern, mould, thereby limited the further raising of electrode depth-to-width ratio, be difficult for realizing mass production.Human spark discharges such as the Timothy A.Fofonoff of Massachusetts Institute Technology processing (EDM) technology is directly processed titanium ultramicroelectrode array on the titanium block material surface: specific direction processes one group of deep-groove array structure plan on the titanium block material surface earlier; Then this titanium piece is rotated to an angle (90 ° or 60 ° etc.), process another group deep-groove array structure plan in its surface with EDM technology again; Repeat above-mentioned procedure of processing successively, changeed 360 ° up to branches such as titanium pieces; The said structure pattern crosses one another, and can obtain highly being 1mm (or 5mm), square or the sexangle electrod-array of pitch 500 μ m (or 250 μ m); With this array pattern structure of chemical etching technology etching,, finally obtain titanium ultramicroelectrode array so that further reduce the single electrode sectional dimension.Because be subjected to the influence of EDM electrodischarge machining principle, the gained electrode is easy to flexural deformation, so the electrode radial dimension can not be too little, depth-to-width ratio can not be excessive.
Summary of the invention
The objective of the invention is defective, a kind of high-aspect-ratio ultra micro tungsten electrode array and preparation method thereof is provided to the prior art existence.Have the advantages that by the ultra micro tungsten electrode array of preparation method of the present invention preparation high-aspect-ratio, high precision, array can be adjusted arbitrarily, cost is low, can produce in batches.
For achieving the above object, high-aspect-ratio ultra micro tungsten electrode array of the present invention comprises epoxy resin and forms ultra micro tungsten electrode array through the tungsten filament of this epoxy resin.
Described ultra micro tungsten electrode array is the array of m * n, m=2-10 wherein, and the spacing of the adjacent tungsten filament of n=2-10 (5) is 150-300 μ m.
The diameter of described tungsten filament is 25-300 μ m.
Preparation method of the present invention is following:
1) gets the copper clamping plate of n * 2 piece and tungsten filament that diameter is 25-300 μ m and clean, wherein n=2-10 with absolute ethyl alcohol;
Described copper clamping plate are of a size of (10.00+XY) mm * 10mm * 2mm, X=0.15-0.3mm wherein, and Y is 0 to 9 natural number;
2) utilizing wire cutting technology symmetry in the middle of the plane of (10.00+XY) of the described n of step 1) * 2 copper coins mm * 10mm to process m the wide 35-310 μ m of being, the degree of depth is the arc groove of 40-320 μ m; The spacing of adjacent arc groove is 150-300 μ m, wherein m=2-10;
3) utilize wire cutting technology process successively from the 15.00mm limit of 2 15mm * 10mm * 2mm copper coin m wide for 35-310 μ m, the degree of depth are the arc groove of 6-8mm, the spacing of adjacent arc groove is the front baffle plate of 150-300 μ m, wherein m=2-10;
4) get 40mm * 10mm * 10mm copper billet, process the platform of 12mm * 10mm * 5mm at the copper billet two ends, form copper base;
5) utilize milling and grinding process to process 2 40mm * 20mm * 2mm side board;
6) two front baffle plates, two 10mm * 10mm * 2mm copper clamping plate and base are fixed together;
7) m root tungsten filament is passed the good front baffle plate of said fixing respectively, and the tungsten filament two ends are placed in the groove of copper clamping plate, it is adhesively fixed in the groove at the copper clamping plate back side with hot melt adhesive;
8) the copper clamping plate with two 10.15mm * 10mm * 2mm are separately fixed at 2 10mm * 10mm * 2mm copper clamping plate both sides, and repeating step 7 then);
9) repeating step 8), until the tungsten filament array of preparing m * n;
10) side board and base is fastening, thus a die cavity formed with 2 front baffle plates;
11) casting epoxy resin (6) and make its curing in above-mentioned die cavity is pruned above-mentioned tungsten filament again;
12) dismantle 2 side boards, n * 2 a copper clamping plate, 2 front baffle plates and 1 base successively, obtain the ultra micro tungsten electrode array of high-aspect-ratio m * n.
The present invention adopts anchor clamps to carry out the assembling of ultra micro tungsten electrode array.Tungsten filament is positioned and forms specific array through polylith copper clamping plate; Form the rectangular parallelepiped die cavity that surrounds the tungsten filament array by front baffle plate, side board and base, casting epoxy resin and curing therein, the final high-aspect-ratio tungsten ultramicroelectrode array that runs through epoxy resin that forms.Compare with other preparation methods, the prepared ultra micro tungsten electrode array of the present invention has characteristics such as high-aspect-ratio, high precision, array can be adjusted arbitrarily, cost is low, can produce in batches.
Description of drawings
Fig. 1 a is the 3-D view of the embodiment of the invention, and Fig. 1 b is the sectional view of Fig. 1 a;
Fig. 2 a is the structural representation of embodiment of the invention copper clamping plate, and Fig. 2 b is the side view of Fig. 2 a;
Fig. 3 a is an embodiment of the invention front baffle arrangement synoptic diagram, and Fig. 3 b is the side view of Fig. 3 a;
Fig. 4 is the structural representation of embodiment of the invention base;
Fig. 5 is an embodiment of the invention side board structural representation;
Fig. 6 is the preparation flow figure of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed description.
1) getting the tungsten filament that 5 * 2 copper clamping plate and diameter be 50 μ m cleans with absolute ethyl alcohol;
Described copper clamping plate are of a size of (10.00,10.15,10.30,10.45,10.60) mm * 10mm * 2mm;
2) referring to Fig. 2; Utilize wire cutting technology symmetry in the middle of the plane of (10.00,10.15,10.30,10.45,10.60) of described 5 * 2 copper coins of step 1) mm * 10mm process 6 wide be that 60 μ m, the degree of depth are the arc groove of 80 μ m; The spacing of adjacent arc groove is 150 μ m; Technological parameter: no-load voltage 70-90V, peak point current＜4.8A, pulse width 2-6 μ s; Recurrent interval＜3 μ s; Wire travelling speed 1m/min, speed of feed 10mm/min, liquid coolant is a deionized water;
3) referring to Fig. 3, utilize wire cutting technology process successively from the 15.00mm limit of 2 15mm * 10mm * 2mm copper coin 6 wide be that 60 μ m, the degree of depth are the arc groove of 6mm, the spacing of adjacent arc groove is the front baffle plate of 150-300 μ m; Its thickness can guarantee that the tungsten filament array has the characteristics of high-aspect-ratio.Technological parameter: no-load voltage 70-90V, peak point current＜4.8A, pulse width 2-6 μ s, recurrent interval＜3 μ s, wire travelling speed 1m/min, speed of feed 10mm/min, liquid coolant is a deionized water;
4) referring to Fig. 4, get 40mm * 10mm * 10mm copper billet, process the platform of 12mm * 10mm * 5mm at the copper billet two ends, form copper base 3, technological parameter: speed of grinding wheel 1440r/min, speed of feed 3-4m/min;
5), utilize milling and grinding process to process 2 40mm * 20mm * 2mm side board, technological parameter: speed of grinding wheel 1440r/min referring to Fig. 5; Speed of feed 3-4m/min;
6), two front baffle plate 2-1,2-2, two 10mm * 10mm * 2mm copper clamping plate 1-1,1-6 and bases 3 are fixed together referring to Fig. 6 a;
7) referring to Fig. 6 b, 6 tungsten filaments are passed said fixing good front baffle plate 2-1,2-2 respectively, and the tungsten filament two ends are placed in the groove of copper clamping plate 1-1,1-6, with hot melt adhesive it is adhesively fixed in the groove at the copper clamping plate back side;
8) referring to Fig. 6 c, copper clamping plate 1-2, the 1-7 of two 10.15mm * 10mm * 2mm is separately fixed at the both sides of 2 10mm * 10mm * 2mm copper clamping plate 1-1,1-6, repeating step 7 then);
9) referring to Fig. 6 d, repeating step 8), until other three to (10.30mm, 10.45mm, 10.60mm) * 10mm * 2mm copper clamping plate and corresponding 6 * 3 tungsten filaments fixedly finish and prepare 6 * 5 tungsten filament array;
10) referring to Fig. 6 e, two side boards 4 and base 3 is fastening, thus form a die cavity with 2 front baffle plate 2-1,2-2;
11) referring to Fig. 6 f, casting epoxy resin in above-mentioned die cavity (6) also makes its curing, more above-mentioned tungsten filament is pruned;
12) referring to Fig. 1,2, dismantle 4,10 copper clamping plate of 2 side boards, 2 front baffle plates and 1 base successively, obtain the ultra micro tungsten electrode array of high-aspect-ratio 6 * 5.
But the present invention utilizes the characteristics of wire cutting technology machining high-precision, narrow groove, accomplishes the processing of critical size key element in copper clamping plate and the front baffle plate, and then guarantees the horizontal-direction pitch between the electrode in the ultra micro tungsten electrode array; Obtain the precise height of copper clamping plate with milling and grinding process, guarantee the vertical direction spacing between the electrode in the ultra micro tungsten electrode array; Rely on milling and grinding process to realize the accurate processing of front baffle plate, its thickness can guarantee that the tungsten filament array has the characteristics of high-aspect-ratio; The thickness that changes the front baffle plate can conveniently be adjusted ultra micro tungsten electrode array depth-to-width ratio; The ultra micro tungsten electrode array of one-shot forming high-aspect-ratio realizes that mass obtains pinpoint high-aspect-ratio tungsten electrode array.
Claims (4)
1. high-aspect-ratio ultra micro tungsten electrode array is characterized in that: comprise epoxy resin (6) and through tungsten filament (5) the ultra micro tungsten electrode array that forms of this epoxy resin (6).
2. so the high-aspect-ratio ultra micro tungsten electrode array of stating according to claim 1, it is characterized in that: described ultra micro tungsten electrode array is the array of m * n, m=2-10 wherein, and the spacing of the adjacent tungsten filament of n=2-10 (5) is 150-300 μ m.
3. so the high-aspect-ratio ultra micro tungsten electrode array of stating according to claim 1, it is characterized in that: the diameter of described tungsten filament is 25-300 μ m.
4. the preparation method of a high-aspect-ratio ultra micro tungsten electrode array, its characteristic is comprising the steps:
1) gets the copper clamping plate of n * 2 piece and tungsten filament that diameter is 25-300 μ m and clean, wherein n=2-10 with absolute ethyl alcohol;
Described copper clamping plate are of a size of (10.00+XY) mm * 10mm * 2mm, X=0.15-0.3mm wherein, and Y is 0 to 9 natural number;
2) utilizing wire cutting technology symmetry in the middle of the plane of (10.00+XY) of the described n of step 1) * 2 copper coins mm * 10mm to process m the wide 35-310 μ m of being, the degree of depth is the arc groove of 40-320 μ m; The spacing of adjacent arc groove is 150-300m, wherein m=2-10;
3) utilize wire cutting technology process successively from the 15.00mm limit of 2 15mm * 10mm * 2mm copper coin m wide for 35-310 μ m, the degree of depth are the arc groove of 6-8mm, the spacing of adjacent arc groove is the front baffle plate of 150-300 μ m, wherein m=2-10;
4) get 40mm * 10mm * 10mm copper billet, process the platform of 12mm * 10mm * 5mm at the copper billet two ends, form copper base;
5) utilize milling and grinding process to process 2 40mm * 20mm * 2mm side board;
6) two front baffle plates, two 10mm * 10mm * 2mm copper clamping plate and base are fixed together;
7) m root tungsten filament is passed the good front baffle plate of said fixing respectively, and the tungsten filament two ends are placed in the groove of copper clamping plate, it is adhesively fixed in the groove at the copper clamping plate back side with hot melt adhesive;
8) the copper clamping plate with two 10.15mm * 10mm * 2mm are separately fixed at 2 10mm * 10mm * 2mm copper clamping plate both sides, and repeating step 7 then);
9) repeating step 8), until the tungsten filament array of preparing m * n;
10) side board and base is fastening, thus a die cavity formed with 2 front baffle plates;
11) casting epoxy resin (6) and make its curing in above-mentioned die cavity is pruned above-mentioned tungsten filament again;
12) dismantle 2 side boards, n * 2 a copper clamping plate, 2 front baffle plates and 1 base successively, obtain the ultra micro tungsten electrode array of high-aspect-ratio m * n.
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Cited By (2)
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| CN107838509A (en) * | 2017-09-19 | 2018-03-27 | 南京航空航天大学 | Array tube electrode preparation method for Electrolyzed Processing |
| CN113533468A (en) * | 2021-07-02 | 2021-10-22 | 广东省科学院工业分析检测中心 | Preparation method of fence type array electrode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107838509A (en) * | 2017-09-19 | 2018-03-27 | 南京航空航天大学 | Array tube electrode preparation method for Electrolyzed Processing |
| CN107838509B (en) * | 2017-09-19 | 2019-06-18 | 南京航空航天大学 | Array tube electrode preparation method for Electrolyzed Processing |
| CN113533468A (en) * | 2021-07-02 | 2021-10-22 | 广东省科学院工业分析检测中心 | Preparation method of fence type array electrode |
| CN113533468B (en) * | 2021-07-02 | 2023-08-18 | 广东省科学院工业分析检测中心 | Preparation method of fence type array electrode |
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