CN102346270A - Interference filter, optical module, and analyzing device - Google Patents
Interference filter, optical module, and analyzing device Download PDFInfo
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- CN102346270A CN102346270A CN2011101976991A CN201110197699A CN102346270A CN 102346270 A CN102346270 A CN 102346270A CN 2011101976991 A CN2011101976991 A CN 2011101976991A CN 201110197699 A CN201110197699 A CN 201110197699A CN 102346270 A CN102346270 A CN 102346270A
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- 230000003287 optical effect Effects 0.000 title claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 146
- 239000000956 alloy Substances 0.000 claims abstract description 146
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 46
- 229910017944 Ag—Cu Inorganic materials 0.000 claims abstract description 12
- 229910018594 Si-Cu Inorganic materials 0.000 claims abstract description 12
- 229910008465 Si—Cu Inorganic materials 0.000 claims abstract description 12
- 229910002696 Ag-Au Inorganic materials 0.000 claims abstract description 11
- 229910002708 Au–Cu Inorganic materials 0.000 claims abstract description 10
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 89
- 229910052802 copper Inorganic materials 0.000 claims description 67
- 238000000576 coating method Methods 0.000 claims description 39
- 238000012545 processing Methods 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 28
- 229910052709 silver Inorganic materials 0.000 claims description 28
- 239000004332 silver Substances 0.000 claims description 28
- 239000010931 gold Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 20
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 238000012360 testing method Methods 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 229910052718 tin Inorganic materials 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 description 56
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 49
- 239000010944 silver (metal) Substances 0.000 description 35
- 239000010946 fine silver Substances 0.000 description 28
- 229910001339 C alloy Inorganic materials 0.000 description 19
- 230000008859 change Effects 0.000 description 16
- 230000007423 decrease Effects 0.000 description 15
- 239000011521 glass Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 238000007689 inspection Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000254 damaging effect Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000005355 lead glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- -1 potassium alkali-metal Chemical class 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Optical Filters (AREA)
Abstract
An interference filter is provided in which a fixed mirror and a movable mirror of the interference filter are selected from an Ag-Au alloy film, an Ag-Cu alloy film, an Ag-Au-Cu alloy film, an Ag-Si-Cu alloy film, an Ag-P-Cu alloy film, an Ag-P-In-Cu alloy film, an Ag-Te-Cu alloy film, an Ag-Ga-Cu alloy film, and an Ag-In-Sn alloy film.
Description
Technical field
The present invention relates to interference light filter, possess the optical module of this interference light filter and possess the analytical equipment of this optical module.
Background technology
In the prior art, known have an interference light filter that on the surfaces opposite to each other of a pair of substrate, relatively disposes the catoptron (mirror) as reflectance coating respectively.Such interference light filter possesses: a pair of substrate that keeps being parallel to each other and with against each other and the mode with gap of certain intervals be formed on a pair of catoptron (reflectance coating) on this a pair of substrate.
In such interference light filter, light reflects between a pair of catoptron, the light transmission of specific wavelength only, and the light utilization of other wavelength is interfered and is cancelled out each other, thus the light transmission of specific wavelength in the incident light only.
Use dielectric film or metal film in the catoptron.The function that catoptron needs is high reflectance characteristic and permeability.If consider such function, then silver (Ag) is effective candidate in the metal film.
Yet film (the Ag film below the is called the fine silver film) heat-resisting quantity or the anti-processing property that are made up of Ag are low.Anti-processing property is meant the permanance to each process conditions in the patterned of for example when the catoptron after the film forming being patterned to the shape of expectation, carrying out.Condition in the processing is that for example high temperature cures or adopt that the etch-resistant coating (resist) of organic solvent is peeled off etc.The reflectivity of the Ag film after this processing descends very big, can not give full play to the function that catoptron is looked for, thereby causes the performance of interference light filter to descend.And the Ag film is also very big because of the decline that changes the reflectivity that causes in time.
From this background the material that uses the catoptron is studied.
For example, recorded and narrated the interference light filter that the Ag-C alloy that will in fine silver, be added with carbon is used for catoptron in the patent documentation 1.
Yet even the Ag-C alloy film described in the patent documentation 1 is used as catoptron, the performance of interference light filter also can descend.In the catoptron of interference light filter, use under the situation of Ag-C alloy film, improved heat-resisting quantity or anti-processing property, the decline of reflectivity also can take place though compare with the situation of using the fine silver film.Therefore, the interference light filter that the light filter performance decrease is inhibited is developed in expectation.
The prior art document
Patent documentation 1: TOHKEMY 2009-251105 communique
Summary of the invention
The object of the present invention is to provide because of processing or change interference light filter, optical module and the analytical equipment that the performance that causes descends and is inhibited in time.
Interference light filter of the present invention is characterised in that: possess across two relative reflectance coatings of gap; Said reflectance coating comprises alloy film; Said alloy film is the Ag-Au alloy film that contains silver (Ag) and gold (Au); The Ag-Cu alloy film that contains silver (Ag) and copper (Cu); Contain silver (Ag); The Ag-Au-Cu alloy film of gold (Au) and copper (Cu); Contain silver (Ag); The Ag-Si-Cu alloy film of silicon (Si) and copper (Cu); Contain silver (Ag); The Ag-P-Cu alloy film of phosphorus (P) and copper (Cu); Contain silver (Ag); Phosphorus (P); The Ag-P-In-Cu alloy film of indium (In) and copper (Cu); Contain silver (Ag); The Ag-Te-Cu alloy film of tellurium (Te) and copper (Cu); Contain silver (Ag); The Ag-Ga-Cu alloy film of gallium (Ga) and copper (Cu) and contain silver (Ag); In the Ag-In-Sn alloy film of indium (In) and tin (Sn) any.
Reflectance coating in the interference light filter has and sees through characteristic and catoptrical reflection characteristic through light; For example see through a reflectance coating and be incident to two light between (a pair of) reflectance coating and between reflectance coating, reflect, thereby the light that makes certain wavelengths passes through from one or another reflectance coating from the outside.
According to the present invention, be included on heat-resisting quantity or the anti-processing property than fine silver or the better above-mentioned alloy film involved in the present invention of Ag-C alloy across two relative reflectance coatings of gap in the interference light filter.Therefore, because of processing or change the reflectivity that causes in time and descend and diminish, the performance of interference light filter descends and is inhibited.
Among the present invention, the thickness of preferred above-mentioned reflectance coating is below the above 80nm of 30nm.
According to the present invention, because the thickness of the reflectance coating that comprises above-mentioned alloy film involved in the present invention is below the above 80nm of 30nm, so reflectance coating has the light transmission function and because of processing or change the transmitance that causes in time and change and also be inhibited.As a result, can obtain the needed reflection of light of a pair of catoptron and see through the interference light filter that the decline of these two characteristics is inhibited.
In addition, during the thickness of above-mentioned alloy film is not enough 30nm, because of thickness is crossed thin so the reflectivity of above-mentioned alloy film is lower, and because of processing or change the reflectivity that causes in time and descend and also become big.And under the situation with the above-mentioned alloy film of sputtering film-forming, because the sputtering rate of above-mentioned alloy film is fast, it is difficult that the control of thickness becomes, the decline that possibly cause making stability.On the other hand, when the thickness of above-mentioned alloy film surpasses 80nm, thereby the function that light transmission rate descends as a pair of catoptron also descends.
Among the present invention, preferred: the Au content of said Ag-Au alloy film in atomicity more than 0.1% below 10%; The Cu content of said Ag-Cu alloy film in atomicity more than 0.1% below 10%; The Au content of said Ag-Au-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Au and Cu in atomicity below 10%; The Si content of said Ag-Si-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Si and Cu in atomicity below 10%; The P content of said Ag-P-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of P and Cu in atomicity below 10%; The P content of said Ag-P-In-Cu alloy film in atomicity more than 0.1%, In content in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of P, In and Cu in atomicity below 10%; The Te content of said Ag-Te-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Te and Cu in atomicity below 10%; The Ga content of said Ag-Ga-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Ga and Cu in atomicity below 10%; The In content of said Ag-In-Sn alloy film in atomicity more than 0.1%, Sn content in atomicity more than 0.1% and the total content of In and Sn in atomicity below 10%.
According to the present invention, because the above-mentioned alloy film that the present invention relates to is above-mentioned composition, so because of processing or change the reflectivity that causes in time and descend and further diminish, the performance that can suppress interference light filter more reliably descends.In addition, the content of each element that contains in the above-mentioned alloy film that the present invention relates to (Au, Cu, Si, P, In, Te, Ga, Sn) is during in atomicity less than 0.1%, then because of processing or change the reflectivity that causes in time and descend and become big.The total content of each element that contains in the above-mentioned alloy film that the present invention relates to surpasses at 10% o'clock in atomicity, the reflectivity step-down.
Among the present invention, preferred above-mentioned reflectance coating is the monofilm that forms with above-mentioned alloy film.
According to the present invention, because reflectance coating is with the film formed monofilm of above-mentioned alloy that the present invention relates to, so in visible wavelength range, reflectance coating shows high reflectance in broadband.In addition, establishing visible wavelength range among the present invention is the following scope of the above 700nm of 400nm.
The present invention possesses the substrate that supports above-mentioned reflectance coating, and above-mentioned reflectance coating comprises dielectric film and above-mentioned alloy film.Aforesaid substrate is set gradually above-mentioned dielectric film and above-mentioned alloy film from substrate-side.Preferred above-mentioned dielectric film is titanium dioxide (TiO
2) monofilm or range upon range of titanium dioxide (TiO
2) or tantalum pentoxide (Ta
2O
5) layer and monox (SiO
2) or magnesium fluoride (MgF
2) layer and multilayer film.
According to the present invention,,, within visible wavelength range, can improve the reflectivity of short wavelength side so compare with the situation that dielectric film is not set because reflectance coating in turn is provided with the dielectric film of compound from substrate-side.
Among the present invention, said reflectance coating comprises said dielectric film, said alloy film and diaphragm, begins from said substrate-side, and said dielectric film, said alloy film and said diaphragm are set in turn in said substrate, and preferred said diaphragm contains monox (SiO
2), silicon oxynitride (SiON), silicon nitride (SiN) or aluminium oxide.
According to the present invention because the protected film protection of dielectric film and alloy film, so because of processing or the reflectivity that changes the above-mentioned alloy film in the reflectance coating that causes in time descend and further diminish, the performance that can suppress interference light filter more reliably descends.
Optical module of the present invention is characterised in that to possess: above-mentioned arbitrary described interference light filter; And the test section that detects the light quantity of the light that this interference light filter selects.
According to the present invention, as stated, the performance of interference light filter decline quilt suppresses as above-mentioned.Therefore, owing to can detect the light of selecting from such interference light filter through test section, optical module can detect the light quantity of the light of expectation wavelength exactly.
Analytical equipment of the present invention is characterised in that the handling part that possesses above-mentioned optical module and implement the light analyzing and processing based on the light quantity of the detected light of above-mentioned test section.
Here; As analytical equipment, thus for example can exemplify out optical measuring instrument that photometric analysis based on the above-mentioned detected light of optical module is incident to colourity or the brightness etc. of the light in the interference light filter, detected gas absorbing wavelength inspection gas kind gas-detecting device and obtain the optical communication apparatus etc. of the data that comprise the light of this wavelength from the light that receives.
According to the present invention, owing to can detect the accurate light quantity of the light of expectation wavelength as described above through optical module, so can in analytical equipment, implement analyzing and processing accurately based on such light quantity accurately.
Description of drawings
Fig. 1 is the figure of brief configuration that the color measuring device of first embodiment that the present invention relates to is shown.
Fig. 2 is the vertical view of brief configuration that the etalon of the interference light filter that constitutes first embodiment is shown.
Fig. 3 is along the direction of arrow sectional view of the III-III line of interference light filter among Fig. 2.
Fig. 4 is the sectional view of brief configuration that the etalon of the interference light filter that constitutes second embodiment that the present invention relates to is shown.
Fig. 5 is the sectional view of brief configuration that the etalon of the interference light filter that constitutes the 3rd embodiment that the present invention relates to is shown.
Embodiment
The embodiment that the present invention relates to is described with reference to the accompanying drawings.
< first embodiment >
(the 1. one-piece construction of color measuring device)
Fig. 1 is the figure of brief configuration that the color measuring device of the embodiment that the present invention relates to is shown.
This color measuring device 1 is an analytical equipment of the present invention, as shown in Figure 1, comprise to inspected object A penetrate the light supply apparatus 2 of light, as the control device 4 of the integrated operation of the colour examining sensor 3 of optical module of the present invention and control color measuring device 1.And to be the light that penetrates from light supply apparatus 2 received by colour examining sensor 3 and based on being the device that the color of inspected object A is carried out assay determination from the detection signal of colour examining sensor 3 outputs to the colourity of inspection object light by inspected object A reflection, the inspection object light that reflected this color measuring device 1.
(the 2. structure of light supply apparatus)
In addition, though in this embodiment illustration possess the color measuring device 1 of light supply apparatus 2, be also light supply apparatus 2 can be set under the situation of luminous components such as liquid crystal display at for example inspected object A.
(the 3. structure of colour examining sensor)
As shown in Figure 1, colour examining sensor 3 comprises: constitute interference light filter of the present invention etalon (Etalon) 5, receive to see through test section 31 and the voltage control unit 6 of the light wavelength that sees through with etalon 5 changes of the light of etalon 5.And colour examining sensor 3 has on the position relative with etalon 5 will be by reflected light (inspection object light) the inner not shown beam incident optical lens of guiding of inspected object A reflection.5 of etalons will be from the light beam split of set wavelength among the inspection object light of beam incident optical lens incident.Then, colour examining sensor 3 receives the light that passes through etalon 5 beam split through test section 31.
(brief configuration of 31. etalons)
Fig. 2 is the vertical view that the brief configuration of the etalon 5 that constitutes interference light filter of the present invention is shown, and Fig. 3 is the sectional view that the brief configuration of etalon 5 is shown.In addition, inspection object light downside from figure is incident to etalon 5 in Fig. 1, but in Fig. 3, establishes the upside incident from figure of inspection object light.In addition, etalon 5 is the so-called variable wavelength interference light filters that can change the size in the gap between a pair of catoptron through external force.
As shown in Figure 2, etalon 5 is tabular opticses of plane square, and a limit is formed for example 10mm.And as shown in Figure 3, etalon 5 possesses two (a pair of) substrates, in this embodiment, is respectively first substrate 51 and second substrate 52.
And, be provided for adjusting the electrostatic actuator 54 of the size of clearance G between the catoptron between stationary mirror 56 and the moving reflector 57 between first substrate 51 and second substrate 52.Electrostatic actuator 54 have first displacement that is arranged on first substrate, 51 sides with electrode (fixed electorde) 541 and second displacement that is arranged on second substrate, 52 sides with electrode (movable electrode) 542, these electrodes dispose relatively.When first displacement was applied voltage with the electrode 541 and second displacement with electrode 542, first displacement began to work with electrostatic attraction between the electrode 542 with the electrode 541 and second displacement, thereby 52 distortion of second substrate change the size of clearance G between catoptron.Change along with the size of clearance G between this catoptron from the light wavelength of etalon 5 outgoing.
The back is narrated the detailed structure of etalon 5 again, and then explanation is as the stationary mirror 56 and the moving reflector 57 of a pair of reflectance coating.
(structure of a pair of reflectance coating of 3-1-1.)
In this embodiment, all be monofilm as the stationary mirror 56 and the moving reflector 57 of a pair of reflectance coating.And monofilm is formed by the alloy film that the present invention relates to as follows.
● ● contain the Ag-Au alloy film of silver (Ag) and gold (Au)
● ● contain the Ag-Cu alloy film of silver (Ag) and copper (Cu)
● ● contain the Ag-Au-Cu alloy film of silver (Ag), gold (Au) and copper (Cu)
● ● contain the Ag-Si-Cu alloy film of silver (Ag), silicon (Si) and copper (Cu)
● ● contain the Ag-P-Cu alloy film of silver (Ag), phosphorus (P) and copper (Cu)
● ● contain the Ag-P-In-Cu alloy film of silver (Ag), phosphorus (P), indium (In) and copper (Cu)
● ● contain the Ag-Te-Cu alloy film of silver (Ag), tellurium (Te) and copper (Cu)
● ● contain the Ag-Ga-Cu alloy film of silver (Ag), gallium (Ga) and copper (Cu)
● ● contain the Ag-In-Sn alloy film of silver (Ag), indium (In) and tin (Sn)
These alloy films in fact all are to be made up of each element that comprises in Ag and the alloy film (Au, Cu, Si, P, In, Te, Ga, Sn).And these alloy films in the scope of not damaging action effect of the present invention, also can contain the impurity element (for example oxygen, nitrogen, carbon etc.) of trace except above-mentioned each that constitute alloy film the element.
In etalon 5, the reflectivity of stationary mirror 56 and moving reflector 57 and the balance of transmitance are crucial.Can obtain high reflectance although form the thickness of the above-mentioned alloy film of stationary mirror 56 and moving reflector 57 through thickening,, on detection sensitivity this point, have problems as interference light filter because transmitance descends.On the other hand, although can improve transmitance through the thickness attenuation that makes the above-mentioned alloy film that forms stationary mirror 56 and moving reflector 57, because reflectivity decline, so descend as the spectroscopic behaviour of interference light filter.
See that from this point the thickness that is preferably formed the above-mentioned alloy film of stationary mirror 56 and moving reflector 57 is below the above 80nm of 30nm.During the thickness of above-mentioned alloy film is not enough 30nm, thickness is thin excessively, the reflectivity step-down of above-mentioned alloy film, and because of processing or change the reflectivity that causes in time and descend and also become big.And, under situation,,, thereby possibly cause making the decline of stability so the control of thickness becomes difficulty because the sputtering rate of above-mentioned alloy film is fast with the above-mentioned alloy film of sputtering film-forming.On the other hand, light transmission rate descended when the thickness of above-mentioned alloy film surpassed 80nm, also descended as the stationary mirror 56 of etalon 5 and the function of moving reflector 57.In addition, the thickness of preferred above-mentioned alloy film is below the above 60nm of 40nm.
Forming under the situation of stationary mirror 56 and moving reflector 57 with above-mentioned alloy film, it is formed as follows.
● ● the Ag-Au alloy film: Au content in atomicity more than 0.1% below 10%
● ● the Ag-Cu alloy film: Cu content in atomicity more than 0.1% below 10%
● ● the Ag-Au-Cu alloy film: Au content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of Au and Cu in atomicity below 10%
● ● the Ag-Si-Cu alloy film: Si content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of Si and Cu in atomicity below 10%
● ● the Ag-P-Cu alloy film: P content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of P and Cu in atomicity below 10%
● ● the Ag-P-In-Cu alloy film: P content in atomicity more than 0.1%, In content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of P, In and Cu in atomicity below 10%
● ● the Ag-Te-Cu alloy film: Te content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of Te and Cu in atomicity below 10%
● ● the Ag-Ga-Cu alloy film: Ga content in atomicity more than 0.1%, Cu content in atomicity more than 0.1%, and the total content of Ga and Cu in atomicity below 10%
● ● Ag-In-Sn:In content in atomicity more than 0.1%, Sn content in atomicity more than 0.1%, and the total content of In and Sn in atomicity below 10%
The content of each element that contains in the above-mentioned alloy film (Au, Cu, Si, P, In, Te, Ga, Sn) is during in atomicity less than 0.1%, because of processing or change the reflectivity that causes in time and descend and become big.The total content of each element that contains in the above-mentioned alloy film surpasses at 10% o'clock in atomicity, the reflectivity step-down.In the above-mentioned alloy film, the remainder beyond each element is actually Ag, but in the scope of not damaging action effect of the present invention, also can contain the impurity of trace.
The target material that use has the composition of above-mentioned alloy film also forms stationary mirror 56 and moving reflector 57 through known method such as sputtering methods.
(structure of a pair of substrate of 3-1-2.)
The glass baseplate of 500 μ m forms first substrate 51 through for example be formed with etching and processing thickness.Particularly, as shown in Figure 3, on first substrate 51, form electrode and form groove 511 and catoptron fixed part 512 through etching.
The vertical view of seeing etalon 5 from the substrate thickness direction (below be called the etalon vertical view), electrode forms groove 511, and to be formed with the planar central point be central circular.As shown in Figure 3, the central part from electrode formation groove 511 forms catoptron fixed part 512 to second substrate 52 side-prominently.
As stated, forming groove 511 with electrode forms catoptron fixed part 512 diameter dimension coaxially and forms little cylindric of groove 511 than electrode.In addition, in this embodiment, as shown in Figure 3, being formed than electrode stationary plane 511A more near second substrate 52 of catoptron fixed part 512 with second substrate, 52 relative catoptron stationary plane 512A.
And first substrate 51 forms on corresponding to the position of stationary mirror 56 and omits illustrated antireflection film (AR) in the lower surface of upper surface relative with second substrate 52 and opposite side.Form this antireflection film through alternately range upon range of low refractive index film and high refractive index film, thereby the reflectivity of the lip-deep visible light of first substrate 51 is descended, transmitance increases.
Through with etching and processing for example the gauge glass substrate that is formed 200 μ m form second substrate 52.
Particularly, in vertical view as shown in Figure 2, possessing with substrate center's point on second substrate 52 is the movable part 521 of central circular and coaxial and keep the binding maintaining part 522 of movable part 521 with movable part 521.The outer circumference diameter size of this binding maintaining part 522 is formed the measure-alike size of outer circumference diameter that forms groove 511 with the electrode of first substrate 51.
It is bigger than linking maintaining part 522 that movable part 521 is formed gauge, and for example in this embodiment, being formed with the gauge of second substrate 52 is 200 μ m of same size.
And, movable part 521 with the upper surface of first substrate, 51 opposition sides in form and omit illustrated antireflection film (AR).This antireflection film have with first substrate 51 on the identical formation of antireflection film that forms, through alternately range upon range of low refractive index film and high refractive index film form.
Linking maintaining part 522 is the diaphragms on every side that surround movable part 521, and for example gauge is formed 50 μ m.Form above-mentioned movable electrode 542 annularly on the face relative of this binding maintaining part 522 with first substrate 51.Movable electrode 542 is relative with fixed electorde 541 through the electromagnetism gap of about 1 μ m.
This movable electrode 542 selects distribution 542A through movable electrode and not shown outside wiring is connected with voltage control unit 6.This movable electrode is selected distribution 542A and is selected the 542B of portion with the movable electrode between the composition surface 524 and be connected with outside wiring through being formed at composition surface 514.
Constitute electrostatic actuator 54 through this movable electrode 542 and aforesaid fixed electorde 541.
In the etalon 5,, between fixed electorde 541 and movable electrode 542, produce electrostatic attraction through apply the voltage of appointment to electrostatic actuator 54.Thereby through this electrostatic attraction movable part 521 is moved makes 52 distortion of second substrate, changes the size of clearance G between catoptron along the substrate thickness direction.Like this, the voltage that applies through adjustment comes the electrostatic attraction of 541,542 generations of control electrode, thereby the change in size of clearance G between the control catoptron can be selected from the light of inspection object light beam split.
(the 4. structure of control device)
The integrated operation of control device 4 control color measuring devices 1.
As this control device 4, can use for example general purpose personal computer, personal digital assistant device or other colour examining special purpose computer etc.
And, as shown in Figure 1, control device 4 be constituted as possess light source control portion 41, colour examining sensor control part 42 and colour examining handling part 43 (handling part of the present invention) etc.
Light source control portion 41 is connected with light supply apparatus 2.And light source control portion 41 is based on the setting input that does not for example utilize the person and to the control signal of light supply apparatus 2 output appointments, and the white light that penetrates the brightness of appointments from light supply apparatus 2.
Colour examining sensor control part 42 is connected with colour examining sensor 3.Then, colour examining sensor control part 42 is set the light wavelength that receives through colour examining sensor 3 based on the setting input that does not for example utilize the person, exports the control signal of the light-receiving amount of the light that is intended to detect this wavelength to colour examining sensor 3.Therefore, the voltage control unit 6 of colour examining sensor 3 is set the voltage that applies to electrostatic actuator 54 based on control signal, so that only see through the light wavelength that the person of utilization expects.
Colour examining handling part 43 control colour examining sensor control parts 42, thus the gap changes the light wavelength through etalon 5 between the reflectance coating of change etalon 5.And colour examining handling part 43 obtains the light quantity through the light of etalon 5 based on the light receiving signal from test section 31 inputs.Then, colour examining handling part 43 based on as the light-receiving amount of the light of above-mentioned each wavelength that obtains calculate colourity by the light of inspected object A reflection.
(the 5. manufacturing approach of etalon)
Form catoptron fixed part 512 grades of first substrate 51, the movable part 521 of second substrate 52 etc. through implementing etching and processing on as the glass substrate of manufactured materials.
Respectively first substrate 51 after the etching and processing and second substrate, 52 usefulness sputtering methods are formed above-mentioned alloy film.Be made as monofilm in this embodiment.
In the patterning processing of the shape that the alloy film after the sputter is patterned as expectation, used wet etching.For example implement following processing in the wet etching.
(A) pattern with expectation forms the resist film as etching mask on alloy film.When solidifying resist, alloy film is exposed at high temperature.
(B) peel off resist film with organic type of anticorrosive additive stripping liquid controlling.At this moment, alloy film is exposed in the organic solvent.
Because alloy film is exposed under such situation, alloy film needs heat-resisting quantity or organic solvent resistance.In addition, alloy film also needs various patience such as high temperature resistant anti-height is moist, sulfidation-resistance, anti-halogen property.Below, having the required patience of alloy film in the manufacturing process of being referred to as etalon is the situation of anti-processing property, having the required patience of alloy film in the general designation patterning operation especially is the situation of anti-patterned property.
On first substrate 51 and second substrate 52, form stationary mirror 56 and moving reflector 57 respectively through such wet etching processing.
Afterwards, engage first substrate 51 and second substrate 52 obtains etalon 5.In engaging operation, film forming plasma polymerization film on composition surface 514,524 for example respectively, thus this plasma polymeric membrane of fitting engages first substrate 51 and second substrate 52.
(the 6. action effect of first embodiment)
In etalon 5, be relatively fixed catoptron 56 and moving reflector 57 of clearance G comprises than fine silver or Ag-C alloy heat-resisting quantity or the better aforesaid alloy film of anti-processing property across between catoptron.Therefore, because of processing for example wet etching processing or the reflectivity that changes the alloy film that causes in time descend and diminish, thereby the performance that can suppress etalon 5 descends.
And; Because the stationary mirror that comprises above-mentioned alloy film 56 of etalon 5 and the thickness of moving reflector 57 are below the above 80nm of 30nm; So stationary mirror 56 and moving reflector 57 have the light transmission function, and suppressed to handle the back or changed in time and the transmitance that causes changes.As a result, in etalon 5, stationary mirror 56 and moving reflector 57 needed reflection of lights reach the decline that sees through these two characteristics and are inhibited.
And because the composition of the above-mentioned alloy film of etalon 5 is in above-mentioned scope, because of processing or change the reflectivity that causes in time and descend and become littler, the performance of etalon 5 descends and obtains suppressing more reliably.
In addition, because the stationary mirror 56 and the moving reflector 57 of etalon 5 are with the film formed monofilm of aforesaid alloy, so stationary mirror 56 and moving reflector 57 show high reflectance in broadband in visible wavelength range.
Then, because the stickability of above-mentioned alloy film and glass substrate is good, because of the performance decline of the not enough etalon 5 that causes of clinging power is prevented.
< second embodiment >
Then, second embodiment that the present invention relates to is described.
Here, to inscape prosign mark identical in the explanation of second embodiment, and omit or simply its explanation with first embodiment.
In second embodiment, comprise on dielectric film 561,571 and alloy film 562,572 this point different with the etalon 5 of first embodiment at the stationary mirror 56 of etalon 5A and moving reflector 57.Alloy film 562,572 is identical with first embodiment.
As shown in Figure 4, in first substrate 51, dielectric film 561, alloy film 562 in turn are set since first substrate 51.That is to say that dielectric film 561 is arranged between first substrate 51 and the alloy film 562.Likewise, in second substrate 52, dielectric film 571, alloy film 572 in turn are set since second substrate 52.That is to say that dielectric film 571 is arranged between second substrate 52 and the alloy film 572.
Dielectric film the 561, the 571st, titanium dioxide (TiO
2) monofilm, or range upon range of titanium dioxide (TiO
2) or tantalum pentoxide (Ta
2O
5) layer and monox (SiO
2) or magnesium fluoride (MgF
2) layer and multilayer film.Under the situation of dielectric multilayer film that is the latter, range upon range of high-index material (TiO
2, Ta
2O
5) the layer and low-index material (SiO
2, MgF
2) layer.Suitably set the thickness or the number of plies of each layer of monofilm or multilayer film based on the optical characteristics of necessity.
(action effect of second embodiment)
The etalon 5A that relates to according to second embodiment; Owing to stationary mirror 56 and moving reflector 57 are that range upon range of above-mentioned dielectric film 561,571 and alloy film 562,572 constitute; Compare with situation about only being made up of alloy film 562,572, the reflectivity of the short wavelength side of visible-range improves.As a result, further broadening shows the wave band of high reflectance, thereby can obtain possessing the stationary mirror 56 that in whole visible-range, has high reflectance and the etalon 5A of moving reflector 57.
And, because the stickability between dielectric film 561,571 and alloy film 562, the stickability between 572 and dielectric film 561,571 and the glass substrate all is good, because of the performance decline of the not enough etalon 5A that causes of clinging power is inhibited.
< the 3rd embodiment >
The 3rd embodiment that the present invention relates to then is described.
Here, inscape identical with first embodiment and second embodiment in the explanation of the 3rd embodiment is come mark etc. with same-sign and omit or simply its explanation.
In the 3rd embodiment, except dielectric film 561,571 and alloy film 562,572, also comprise on diaphragm 563,573 this point different at the stationary mirror 56 of etalon 5B and moving reflector 57 with the etalon 5A of the etalon 5 of first embodiment and second embodiment.Alloy film 562,572 is identical with first embodiment.Dielectric film 561,571 is identical with second embodiment.
As shown in Figure 5, in first substrate 51, dielectric film 561, alloy film 562, diaphragm 563 in turn are set since first substrate 51.That is to say that diaphragm 563 is arranged on a side opposite with dielectric film 561 with respect to alloy film 562.Equally, at second substrate 52, dielectric film 571, alloy film 572, diaphragm 573 in turn are set since second substrate 52.Diaphragm 573 is arranged on a side opposite with dielectric film 571 with respect to alloy film 572.
Diaphragm 563,573 contains monox (SiO
2), silicon oxynitride (SiON), silicon nitride (SiN) or aluminium oxide.The thickness of preferred diaphragm is below the above 20nm of 10nm.Through being set in such scope, can protecting stationary mirror 56 and moving reflector 57 and reflectivity and transmitance are descended.
(action effect of the 3rd embodiment)
The etalon 5B that relates to according to the 3rd embodiment; Because dielectric film 561,571 and alloy film 562,572 protected film 563,573 protections; Because of processing or the reflectivity that changes the stationary mirror 56 that causes and the alloy film in the moving reflector 57 562,572 in time descend and be suppressed, thereby the performance of interference light filter descends and is further prevented reliably.
< other embodiment >
In addition, the present invention is not limited to aforesaid embodiment, can reach distortion in the scope of the object of the invention, improvement etc. and all comprise in the present invention.
In the above-described embodiment, illustration the etalon of vertical view square shape, but be not limited thereto, can form also that for example vertical view is circular, the vertical view polygon.
And alloy film that also can be identical forms stationary mirror 56 and moving reflector 57.For example can making, stationary mirror 56 is the Ag-Au alloy film for Ag-Cu alloy film, moving reflector 57.
And, though etalon 5 is described as the variable wavelength interference light filter, be not limited to this at above-mentioned embodiment.Big or small indeclinable interference light filter for the gap between catoptron also can be suitable for a pair of catoptron that forms with above-mentioned alloy film.
And; The height and position of electrode stationary plane 511A and catoptron stationary plane 512A according to be fixed on the stationary mirror 56 on the catoptron stationary plane 512A and be formed at moving reflector 57 on second substrate 52 between catoptron between the gauge of size, stationary mirror 56 or moving reflector 57 between size, fixed electorde 541 and the movable electrode 542 of clearance G come suitably to set, be not limited to the such structure of above-mentioned embodiment.Thereby for example in stationary mirror 56 and moving reflector 57, comprising under the situation that its gauge of dielectric multilayer film increases, can be to form the structure of electrode stationary plane 511A with catoptron stationary plane 512A on the identical faces, forming the catoptron pickup groove of cylindrical groove shape and the structure etc. of formation catoptron stationary plane 512A on the bottom surface of this catoptron pickup groove at the central part of electrode stationary plane 511A.
In the above-described embodiment, example fixed electorde 541 is provided with a structure of selecting electrode, but be not limited thereto.Also can increase and select electrode.In the case, select among the electrode one for two and apply as the voltage that applies voltage to fixed electorde 541 and use terminal, another is as the charge detection terminal that detects the electric charge of maintenance on the fixed electorde 541.To movable electrode 542 also can be same.
And, in the above-described embodiment illustration can be through the structure of the etalon 5 of clearance G between electrostatic actuator 54 adjustment catoptrons, but also can be the structure of adjusting clearance G between catoptron through other driver part.For example can be on a side opposite of second substrate 52, the structure of pushing the electrostatic actuator or the piezoelectric part of second substrate 52 through repulsion to be set with first substrate 51.
And, be not limited to as illustrate in above-mentioned the 3rd embodiment to the range upon range of dielectric film of substrate, alloy film and diaphragm, also can be dielectric film not to be set and to the structure of folded alloy film of substrate layer and diaphragm.
And concrete structure and step during embodiment of the present invention can suitably change to other structure etc. in the scope that can reach the object of the invention.
[embodiment]
Then, though the heat-resisting quantity or the anti-processing property of above-mentioned alloy film are given an example to illustrate in greater detail the present invention, the present invention is not subjected to any restriction of the record content of these examples.
(1. heat-resisting quantity)
At first, estimate the heat-resisting quantity of fine silver film and alloy film (Ag-C alloy film, Ag-Au alloy film, Ag-Cu alloy film, Ag-Au-Cu alloy film, Ag-Si-Cu alloy film, Ag-P-Cu alloy film, Ag-P-In-Cu alloy film, Ag-Te-Cu alloy film, Ag-Ga-Cu alloy film and Ag-In-Sn alloy film).
Use the fine silver film and have the target material of the composition shown in following, on level and smooth glass substrate, form fine silver film and the above-mentioned alloy film of thickness 40nm through sputtering method.
Ag-C: contain 5.0% C in atomicity, remainder is Ag basically.
Ag-Au: contain 1.0% Au in atomicity, remainder is Ag basically.
Ag-Cu: contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-Au-Cu: contain 1.0% Au in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-Si-Cu: contain 1.0% Si in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-P-Cu: contain 1.0% P in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-P-In-Cu: contain 0.5% P in atomicity, contain 0.5% In in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-Te-Cu: contain 1.0% Te in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-Ga-Cu: contain 1.0% Ga in atomicity, contain 1.0% Cu in atomicity, remainder is Ag basically.
Ag-In-Sn: contain 1.0% In in atomicity, contain 1.0% Sn in atomicity, remainder is Ag basically.
As heat-resisting quantity, the fine silver film through the initial stage after the film forming relatively and the reflectivity of above-mentioned alloy film and after implementing 250 ℃, 1 hour heat treated under the atmospheric environment reflectivity of (after the hot test) carry out.Use spectrocolorimeter, measure as the reflectivity below the above 700nm of wavelength 400nm of visible-range.
(the unit: %) and the reflectivity (unit: %) after the heat treated of the initial stage reflectivity of fine silver film and above-mentioned alloy film among 400nm shown in the table 1,550nm and the 700nm.And will from the initial stage reflectivity, deduct variable quantity (the reduction) (unit: %) illustrate of the value of the reflectivity after the heat treated in the table 1 as reflectivity.
Table 1
As shown in table 1; The initial stage reflectivity of Ag-Au alloy film, Ag-Cu alloy film, Ag-Au-Cu alloy film, Ag-Si-Cu alloy film, Ag-P-Cu alloy film, Ag-P-In-Cu alloy film, Ag-Te-Cu alloy film, Ag-Ga-Cu alloy film and Ag-In-Sn alloy film (these alloy films of following general designation are the alloy film that present embodiment relates to) is compared with fine silver film or Ag-C alloy film; Removing outside the part, all is lower value.Yet the reflectivity that can know the alloy film after the hot test descends and compares littler with fine silver film or Ag-C alloy film.
Especially, the reflectivity that can know Ag-Si-Cu alloy film, Ag-P-Cu alloy film, Ag-P-In-Cu alloy film and Ag-Te-Cu alloy film descends less in whole visible wavelength range.And, can know that wherein especially the reflectivity of Ag-Te-Cu alloy film descends little.
On the other hand, the fine silver film has high reflectance at the initial stage after the film forming in whole visible wavelength range.Yet exposure fine silver film at high temperature is owing to the growth of grain piece, the surfaceness of film become greatly, so reflectivity decline is bigger.Especially, the reflectivity at short wavelength side (400nm) fine silver film descends significantly.
And, can be roughly equal extent though know the reflectivity that alloy film that Ag-C alloy film and present embodiment relate to was compared at the film forming initial stage, but that the reflectivity after the hot test descends is bigger.
(2. anti-processing property)
Then, estimate the anti-processing property of the alloy film that fine silver film, Ag-C alloy film and present embodiment relate to.
Identical with the evaluation of above-mentioned heat-resisting quantity; Use has the target material of the composition of the alloy film that fine silver film, Ag-C alloy film and present embodiment relate to, and on level and smooth glass substrate, forms the alloy film that fine silver film, Ag-C alloy film and present embodiment relate to through sputtering method.
Then, as anti-processing property, estimate anti-patterned property here.Patterned is as shown in following.
(1) on the alloy film that the fine silver film, Ag-C alloy film and the present embodiment that are formed on the glass substrate relate to, is coated with positive corrosion-resisting agent through spin coater
(2) behind the coating positive corrosion-resisting agent, in cleaning oven with 90 ℃ of prebake 15 minutes
(3) use contact photoetching machine to pass through photomask exposure
(4) in developer solution, use tetramethylammonium hydroxide aqueous solution to develop
(5) in cleaning oven, after 120 ℃, cured 20 minutes
(6) with resist as etching mask, the alloy film that etching fine silver film, Ag-C alloy film and present embodiment relate in phosphoric acid, nitric acid and aqueous acetic acid
(7) peel off resist with organic type of anticorrosive additive stripping liquid controlling
Then, identical with the evaluation of above-mentioned heat-resisting quantity, the reflectivity of the alloy film that fine silver film, Ag-C alloy film and the present embodiment through the initial stage after the film forming relatively relates to and the reflectivity after the patterned are estimated.
The initial stage reflectivity of the alloy film that the fine silver film under 400nm shown in the table 2,550nm and the 700nm, Ag-C alloy film and present embodiment relate to (unit: %) and the reflectivity (unit: %) after the patterned.And will from the initial stage reflectivity, deduct variable quantity (the reduction) (unit: %) illustrate of the value of the reflectivity after the patterned in the table 2 as reflectivity.
[table 2]
As shown in table 2, the initial stage reflectivity of the alloy film that present embodiment relates to is compared with fine silver film or Ag-C alloy film, except a part, all is lower value.Yet, can know that the reflectivity of the alloy film that the present embodiment after the patterned relates to descends less.
Especially, the reflectivity that can know Ag-Cu alloy film, Ag-Si-Cu alloy film, Ag-P-Cu alloy film, Ag-P-In-Cu alloy film, Ag-Te-Cu alloy film, Ag-Ga-Cu alloy film and Ag-In-Sn alloy film descends less in whole visible wavelength range.And, can know that wherein especially the reflectivity of Ag-Te-Cu alloy film descends less.
On the other hand, the fine silver film has high reflectance at the film forming initial stage in whole visible wavelength range.Yet, descend very big through the reflectivity of the fine silver film after the patterned.Especially, the reflectivity at short wavelength side (400nm) fine silver film descends significantly.The decline of the reflectivity of such fine silver film can be thought to cause by exposing at high temperature or in the resist stripping process, be exposed in the organic solvent in the operation curing of resist.
And the reflectivity that the Ag-C alloy film is compared at the film forming initial stage with the alloy film that present embodiment relates to is roughly identical degree, but can know that the reflectivity after the patterned descends bigger.
As stated, the reflectance varies of the alloy film that present embodiment relates to after hot test is little, and the reflectance varies after the patterned is little.And, in the alloy film that present embodiment relates to, can know that especially the reflectivity decline of Ag-Te-Cu alloy film after reaching patterned after the hot test is compared significantly little with fine silver film or Ag-C alloy film.
Therefore, the performance that can know in a pair of reflectance coating variable wavelength interference light filter (etalon) that uses the alloy film that these present embodiments relate to descends and is inhibited.And, can know after the variable wavelength interference light filter is as launch also to be suppressed, thereby obtain the high variable wavelength interference light filter of reliability because of changing the performance decline that causes in time.
Symbol description
Claims (9)
1. an interference light filter is characterized in that,
Possess across two relative reflectance coatings of gap,
Said reflectance coating comprises alloy film,
Said alloy film is the Ag-Au alloy film that contains silver (Ag) and gold (Au); The Ag-Cu alloy film that contains silver (Ag) and copper (Cu); Contain silver (Ag); The Ag-Au-Cu alloy film of gold (Au) and copper (Cu); Contain silver (Ag); The Ag-Si-Cu alloy film of silicon (Si) and copper (Cu); Contain silver (Ag); The Ag-P-Cu alloy film of phosphorus (P) and copper (Cu); Contain silver (Ag); Phosphorus (P); The Ag-P-In-Cu alloy film of indium (In) and copper (Cu); Contain silver (Ag); The Ag-Te-Cu alloy film of tellurium (Te) and copper (Cu); Contain silver (Ag); The Ag-Ga-Cu alloy film of gallium (Ga) and copper (Cu) and contain silver (Ag); In the Ag-In-Sn alloy film of indium (In) and tin (Sn) any.
2. interference light filter according to claim 1 is characterized in that,
The thickness of said reflectance coating is below the above 80nm of 30nm.
3. interference light filter according to claim 1 and 2 is characterized in that,
The Au content of said Ag-Au alloy film in atomicity more than 0.1% below 10%,
The Cu content of said Ag-Cu alloy film in atomicity more than 0.1% below 10%,
The Au content of said Ag-Au-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Au and Cu in atomicity below 10%,
The Si content of said Ag-Si-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Si and Cu in atomicity below 10%,
The P content of said Ag-P-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of P and Cu in atomicity below 10%,
The P content of said Ag-P-In-Cu alloy film in atomicity more than 0.1%, In content in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of P, In and Cu in atomicity below 10%,
The Te content of said Ag-Te-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Te and Cu in atomicity below 10%,
The Ga content of said Ag-Ga-Cu alloy film in atomicity more than 0.1%, Cu content in atomicity more than 0.1% and the total content of Ga and Cu in atomicity below 10%,
The In content of said Ag-In-Sn alloy film in atomicity more than 0.1%, Sn content in atomicity more than 0.1% and the total content of In and Sn in atomicity below 10%.
4. according to each described interference light filter in the claim 1 to 3, it is characterized in that,
Said reflectance coating is with the film formed monofilm of said alloy.
5. according to each described interference light filter in the claim 1 to 4, it is characterized in that,
Said interference light filter possesses the substrate that supports said reflectance coating,
Said reflectance coating comprises dielectric film and said alloy film,
Begin from said substrate-side, said dielectric film and said alloy film are set in turn in said substrate,
Said dielectric film is titanium dioxide (TiO
2) monofilm or range upon range of titanium dioxide (TiO
2) or tantalum pentoxide (Ta
2O
5) layer and monox (SiO
2) or magnesium fluoride (MgF
2) layer and multilayer film.
6. interference light filter according to claim 5 is characterized in that,
Said reflectance coating comprises said dielectric film, said alloy film and diaphragm,
Begin from said substrate-side, said dielectric film, said alloy film and said diaphragm are set in turn in said substrate,
Said diaphragm contains monox (SiO
2), silicon oxynitride (SiON), silicon nitride (SiN) or aluminium oxide.
7. optical module is characterized in that possessing:
Each described interference light filter in the claim 1 to 6; And
The test section of the light quantity of the light that detection is selected by this interference light filter.
8. analytical equipment is characterized in that possessing:
The described optical module of claim 7; And
The light quantity of the light that detects based on said test section is implemented the handling part of light analyzing and processing.
9. analytical equipment is characterized in that possessing:
Each described interference light filter in the claim 1 to 6;
The test section of the light quantity of the light that detection is selected by this interference light filter; And
The light quantity of the light that detects based on said test section is implemented the handling part of light analyzing and processing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010165630A JP2012027226A (en) | 2010-07-23 | 2010-07-23 | Interference filter, optical module and analyzer |
| JP2010-165630 | 2010-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102346270A true CN102346270A (en) | 2012-02-08 |
Family
ID=44651020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101976991A Pending CN102346270A (en) | 2010-07-23 | 2011-07-14 | Interference filter, optical module, and analyzing device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120019827A1 (en) |
| EP (1) | EP2410369B1 (en) |
| JP (1) | JP2012027226A (en) |
| KR (1) | KR20120010193A (en) |
| CN (1) | CN102346270A (en) |
| TW (1) | TW201222023A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103257386A (en) * | 2012-02-16 | 2013-08-21 | 精工爱普生株式会社 | Interference filter, optical module, and electronic apparatus |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5919728B2 (en) * | 2011-10-26 | 2016-05-18 | セイコーエプソン株式会社 | Spectrometer |
| JP5811789B2 (en) * | 2011-11-09 | 2015-11-11 | セイコーエプソン株式会社 | Spectrometer |
| JP5910099B2 (en) | 2012-01-18 | 2016-04-27 | セイコーエプソン株式会社 | Interference filters, optical modules and electronics |
| JP6098051B2 (en) | 2012-07-04 | 2017-03-22 | セイコーエプソン株式会社 | Spectrometer |
| JP6260080B2 (en) * | 2013-01-07 | 2018-01-17 | セイコーエプソン株式会社 | Wavelength variable interference filter, method for manufacturing wavelength variable interference filter, optical module, and electronic device |
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Also Published As
| Publication number | Publication date |
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| US20120019827A1 (en) | 2012-01-26 |
| KR20120010193A (en) | 2012-02-02 |
| JP2012027226A (en) | 2012-02-09 |
| EP2410369A1 (en) | 2012-01-25 |
| TW201222023A (en) | 2012-06-01 |
| EP2410369B1 (en) | 2015-10-14 |
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Application publication date: 20120208 |