CN102345114B - MOCVD heating device, formation method thereof and method for forming film by MOCVD - Google Patents
MOCVD heating device, formation method thereof and method for forming film by MOCVD Download PDFInfo
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Abstract
The invention provides a formation method of a MOCVD heating device, which comprises the following steps: providing a MOCVD heating part, wherein the heating part has an upper surface which is used for accommodating a substrate of a film to be deposited; forming an isolation layer which covers the upper surface of the heating part; removing impurity elements of the isolation layer. The invention also provides a heating device formed by the formation method of the MOCVD heating device, and a method for forming a film by MOCVD through the heating device, and solves the problem of uneven film thickness during film growth of the substrate on the heating part.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of MOCVD heating unit, its formation method and a kind of film forming method of MOCVD.
Background technology
Metal organic chemical vapor deposition (MOCVD) is a kind of novel vapor phase growth technology that grows up on the basis of vapor phase epitaxial growth (VPE).Particularly, described MOCVD with hydride of the organic compound of III family, II family element and V, VI family element etc. as crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the various III of growing-V families, II-VI compounds of group thin layer monocrystal material.Wherein, titanium nitride film widespread use in unicircuit as a kind of common blocking layer and adhesion-layer materials.And along with the requirement of the step coverage rate of low live width, MOCVD forms the technique that titanium nitride membrane will replace the titanium nitride film of PVD method formation as blocking layer and the bonding coat of tungsten bolt.
As shown in Figure 1, be the MOCVD device: comprise, chamber 001, be arranged at the heating part 10 of described chamber 001 bottom, and the feedway 20 that is positioned at chamber 001 top, described heating part 10 has upper surface 11, and substrate 30 is positioned on the upper surface 11 of described heating part 10.
Particularly, contain organometallic unstripped gas by described feedway 20 to the interior supply of described chamber 001, and by heating part 10, described unstripped gas is decomposed, at substrate 30 surface formation films.
Adopting MOCVD to form titanium nitride film as example, in number of patent application is 200780051487.4 Chinese patent application, provide a kind of MOCVD method to form the method for above-mentioned titanium nitride film, comprising: adopt four dimethylammonio titanium Ti[N (CH
3)
2]
4(abbreviation TDMAT) as organometallic unstripped gas, and make described TDMAT that thermolysis at high temperature occur by the heating part, and its degradation production includes titanium nitride TiN, dimethylamine (CH
3)
2NH and other hydrocarbon polymers (other hydrocarbons).Particularly, reaction formula is:
Ti[N (CH
3)
2)]
4→ TiN+(CH
3)
2Other hydrocarbon polymers of NH+
Place substrate 30 on the heating part, form organic metallic diaphragm in described substrate 30.
But, because heating part 10 upper surface 11 heat distribution are inhomogeneous, cause the film deposition rate of substrate 30 different zones also different, thereby cause the organic metallic diaphragm of the formation problem in uneven thickness in substrate 30, and form the unsettled problem of thickness of organic metallic diaphragm on different base 30.
Summary of the invention
The problem that the present invention solves is to provide a kind of MOCVD heating unit, its formation method and a kind of film forming method of MOCVD, solving when being positioned at substrate on the heating part and carrying out coating growth, and the inhomogeneous and unsettled problem of the thicknesses of layers of appearance.
For addressing the above problem, the invention provides a kind of MOCVD heating unit formation method, comprising: the MOCVD heating part is provided, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface; Remove the impurity element of described sealing coat.
Optionally, described sealing coat is titanium nitride film.
Optionally, in described titanium nitride film impurity element comprise carbon, protium or not with a kind of or combination of the nitrogen element of the titanium elements Cheng Jian of titanium nitride cell configuration.
Optionally, the method for the described impurity element of removal is reactive ion etching.
Optionally, described reactive ion comprises a kind of of hydrogen ion and nitrogen ion or combination.
Optionally, described reactive ion and described impurity element carry out including in reacted resultant a kind of of hydrocarbon gas and nitrogenous gas or combination.
Optionally, described hydrogen ion formation method is for to ionize hydrogen, and the formation method of described nitrogen ion is for to ionize nitrogen.
Optionally, the flow velocity of described hydrogen is 200sccm ~ 300sccm, and the flow velocity of described nitrogen is 300sccm ~ 400sccm.
Optionally, after removing described impurity element, described titanium nitride film has smooth upper surface, and the heteropical numerical range of upper surface standard deviation of described titanium nitride film is 1.5 ~ 3.4.
Optionally, the formation technique of described titanium nitride film is: adopting four dimethylammonio titaniums is raw material, makes described raw material thermolysis by described heating part, and the upper surface in described heating part forms titanium nitride film.
Optionally, the temperature of described thermolysis is 400 ℃ ~ 500 ℃.
Optionally, the thickness of described titanium nitride film is 3000 dusts ~ 3200 dusts.
The present invention also provides a kind of film forming method of MOCVD, comprising: the MOCVD heating part is provided, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface; Remove the impurity element of described sealing coat; Place substrate at the heating part upper surface that is formed with sealing coat; Form film at substrate surface.
Optionally, described sealing coat is titanium nitride film.
Optionally, in described titanium nitride film, impurity element comprises carbon, protium or does not consist of a kind of or combination of the nitrogen element of titanium nitride cell configuration.
Optionally, the method for the described impurity element of removal is reactive ion etching.
The present invention provides again a kind of MOCVD heating unit, comprising: the MOCVD heating part, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Cover the sealing coat of described heating part upper surface.
Optionally, described sealing coat has smooth upper surface, and the heteropical numerical range of surface standard deviation of described sealing coat is 1.5 ~ 3.4.
Compared with prior art, such scheme has the following advantages: by to being positioned on described heating part, the sealing coat that contains impurity element carries out reactive ion etching, reactive ion and described impurity element react and generate hydrocarbon gas or nitrogenous class gas, the described sealing coat that obtains has smooth upper surface, make the upper surface of heating part be heated more even, and then make the substrate that is positioned on described heating part be heated evenly, the follow-up thicknesses of layers that generates in substrate is also more even;
Further, cell configuration in sealing coat after removal impurity is neat, make the densification of arranging of described sealing coat, described sealing coat performance is more stable, and then the upper surface that makes described heating part is heated more even, the substrate that is positioned on described heating part is heated evenly, and the follow-up rete that generates in substrate is also more stable and even.
Description of drawings
Fig. 1 is MOCVD device schematic diagram;
Fig. 2 forms the structural representation of sealing coat in prior art;
Fig. 3 to Fig. 5 is MOCVD heating unit formation method schematic diagram of the present invention;
Fig. 6 and Fig. 7 are the surperficial high magnification maps of titanium nitride film that prior art and the present invention form respectively;
Fig. 8 and Fig. 9 are that prior art and the present invention form the separation layer thickness distribution plan.
Embodiment
Contriver's discovery, the heating part in the MOCVD device also need to form one deck sealing coat at described heating part upper surface before use, for the protection of the upper surface of described heating part, increase simultaneously the planeness of upper surface.
For instance, described sealing coat can be titanium nitride film, forms described titanium nitride film layer method and generally adopts TDMAT that thermolysis at high temperature occurs, to generate titanium nitride film.
Particularly, adopt TDMAT as organometallic unstripped gas, and make described TDMAT that thermolysis at high temperature occur by the heating part, its degradation production includes titanium nitride TiN, dimethylamine (CH
3)
2NH and other hydrocarbon polymers (other hydrocarbons).Particularly, reaction formula is:
Ti[N (CH
3)
2)]
4→ TiN+(CH
3)
2Other hydrocarbon polymers of NH+
But the contriver finds simultaneously, and as shown in Figure 2, when heating process to described TDMAT was finished in the heating part, the TDMAT thermolysis that can have part was not thorough, and described halfway thermolysis will cause in the titanium nitride film of generation and contain impurity element 200.Described impurity element 200 is for being doped in carbon or the protium between described titanium nitride cell configuration (not shown), perhaps with described titanium nitride cell configuration (not shown) in titanium elements or carbon or the protium of nitrogen element Cheng Jian; Be perhaps not with described titanium nitride cell configuration (not shown) in the nitrogen element of titanium elements Cheng Jian.
The above-mentioned impurity element that is doped in titanium nitride film will cause arranges loosely between the titanium nitride film cell configuration of formation, cause titanium nitride film loose; Described impurity element also can make the surface irregularity of titanium nitride film, and is smooth not; At last, also can make the titanium nitride film unstable properties, be easy to react in the semiconductor technology manufacturing.
To sum up, after above-mentioned sealing coat with impurity element is formed at described heating part, because sealing coat is loose, surface irregularity and unstable properties, will affect the heat conductivility of sealing coat, make the substrate that is positioned on described heating part be heated inhomogeneous.Because what the MOCVD device used is the principle formation rete of thermolysis, inhomogeneous if described substrate is heated, will affect the performance of other retes of this MOCVD device formation of follow-up use, be usually expressed as thickness offset and the unstable of rete.
Based on above-mentioned discovery, the contriver provides a kind of MOCVD heating unit formation method, comprising: the MOCVD heating part is provided, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface; Remove the impurity element of described sealing coat.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Set forth detail in the following description so that fully understand the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention.Therefore the present invention is not subjected to the restriction of following public concrete enforcement.
At first, provide the MOCVD device.As shown in Figure 3: comprise, chamber 001, and be arranged at the heating part 10 of described chamber 001 bottom, and the feedway 20 that is positioned at chamber 001 top, described heating part 10 has upper surface 11, and described heating part 10 is used for placing substrate 30, and contacts with described substrate 30 by upper surface 11.
Continuation is with reference to figure 3; contain organometallic unstripped gas by described feedway 20 to the interior supply of described chamber 001; and by heating part 10, described unstripped gas is carried out thermolysis; 10 surfaces form sealing coat in the heating part; for the protection of the upper surface 11 of described heating part 10, increase simultaneously the planeness of upper surface 11.The thickness of described sealing coat is 3000 dusts ~ 3200 dusts.
In present embodiment, as shown in Figure 3, described sealing coat is titanium nitride film 40, its concrete formation method is: contain the unstripped gas of four dimethylammonio titaniums (TDMAT) to the interior supply of described chamber 001 by described feedway 20, and by heating part 10, described unstripped gas is carried out thermolysis, at heating arrangement 10 surface formation titanium nitride films 40, the thickness of described titanium nitride film 40 is 3000 dusts ~ 3200 dusts.
Further, the heat decomposition temperature that described heating part 10 provides is approximately 400 ℃ ~ 500 ℃ left and right, preferably, when being 450 ℃, makes the TDMAT thermolysis that is positioned at 10 surfaces, heating part.
The thermal decomposition product of above-mentioned TDMAT includes titanium nitride TiN, dimethylamine (CH
3)
2NH and other hydrocarbon polymers (other hydrocarbons).Particularly, reaction formula is:
Ti[N (CH
3)
2)]
4→ TiN+(CH
3)
2Other hydrocarbon polymers of NH+
When heating process to described TDMAT was finished in heating part 10, the TDMAT thermolysis that can have part was not thorough, and described halfway thermolysis will cause in the titanium nitride film of generation and contain impurity element.As shown in Figure 2, described impurity element 200 comprises a kind of or combination in nitrogen element, carbon or the protium that comprises in TDMAT.The contriver carries out composition analysis by the titanium nitride film 40 that described TDMAT thermolysis is formed, and finds that in impurity element 200, the content of carbon is higher.
With reference to figure 4, described titanium nitride film 40 is carried out reactive ion etching, described reactive ion comprises a kind of of hydrogen ion and nitrogen ion or combination.In the present embodiment, described reactive ion 300 is comprised of hydrogen ion and nitrogen Ar ion mixing.
Particularly, described reactive ion etching is carried out under the rough vacuum of a few to tens of handkerchiefs at zero point, described titanium nitride film 40 is in low potential, during reactive ion 300 plasma, a large amount of reactive ions produce under perpendicular to the electric field action on titanium nitride film 40 surfaces and accelerate, and impinge perpendicularly on titanium nitride film 40 surfaces, carry out physical etchings with larger momentum, simultaneously strong chemical reaction also occurs with the impurity element on titanium nitride film 40 surfaces in described ion, produces the chemical etching effect.
Wherein, described impurity element 200 easily reacts with the reactive ion 300 with larger momentum as nitrogen element, carbon and protium, generates a kind of of hydrocarbon gas CxHy and nitrogenous gas or combination, and then obtains the titanium nitride film 40 of even structure.In the present embodiment, described impurity element 200 and the reacted resultant of reactive ion 300 are the mixture that includes hydrocarbon gas and nitrogenous gas.Described hydrocarbon gas can be the gases such as methane, and described nitrogenous gas can be the gases such as ammonia.
As an embodiment, can carry out plasma by the mixed gas with hydrogen and nitrogen, to form above-mentioned hydrogen and nitrogen plasma.Wherein, the flow velocity of described hydrogen is 200sccm ~ 300sccm, and the flow velocity of described nitrogen is 300sccm ~ 400sccm.Described plasma needs the variable-frequency power sources of 350KHz ~ 450KHz.
As shown in Figure 5, for by after above-mentioned reactive ion etching, the titanium nitride film 40 of formation.With reference to figure 4, the impurity element 200 in described titanium nitride film 40 as nitrogen element, carbon and protium, is partly removed by reactive ion etching simultaneously.In particular, near the surface that has even structure the upper surface of described titanium nitride film 40.The even structure surface thickness of described titanium nitride film 40 is about 100 dusts ~ 200 dusts.
The contriver finds simultaneously, because the removal of impurity element 200, the thickness of whole titanium nitride film 40 also reduces accordingly.After present embodiment, the thickness of described titanium nitride film 40 is 2800 dusts ~ 2900 dusts, and the thickness of original titanium nitride film 40 of comparing is 3000 dusts ~ 3200 dusts, and the thickness of described titanium nitride film 40 has reduced 200 ~ 400 dusts.
Through aforesaid method, described titanium nitride film 40 has the upper surface of even structure, and the raising of upper surface slickness, and whole titanium nitride film 40 is finer and close, and performance is more stable.
As Fig. 6 and shown in Figure 7, the titanium nitride film surface high magnification map that forms respectively for prior art and the present invention particularly, is the surface of the titanium nitride film under 50,000 times of amplifications.Can be found out by Fig. 6 and Fig. 7, the titanium nitride film of heating arrangement of the present invention has surface finish preferably.
Simultaneously, in order to verify the present invention, use the heating part that is formed with titanium nitride film of the present invention, place substrate on described heating part, and form organic metallic diaphragm in described substrate.In present embodiment, the organo-metallic film material of employing is titanium nitride film, and the standard thickness of described titanium nitride film is 153 dusts.
Then, the process uniformity that is positioned at suprabasil titanium nitride film is measured.The process uniformity of described titanium nitride film is to assess by the difference in thickness to the different positions of the titanium nitride film that forms in substrate.
Wherein, inhomogeneity define method is as follows: choose that on titanium nitride film, number is the different positions point of N, and different location points is carried out thickness measurement.Suppose that measuring result is X1, X2, X3...XN, definition mean value is:
Standard deviation heterogeneity (NU) is defined as:
In present embodiment, the number N of the described different positions point of choosing is 9.
Experimental result as shown in Table 1, the contriver has adopted 3 MOCVD devices to compare, the model of described MOCVD device is AMAT Endura5500, device name is respectively CTCTI02, CTCTI06, CTCTI07.Within a plurality of experiment date, measure respectively the standard deviation heterogeneity (UN) that adopts prior art and the formed titanium nitride film of the inventive method.
Table one
Can find out, adopt the titanium nitride film formation method of heating part of the present invention, the titanium nitride film that forms in substrate has better homogeneity.
At last, in order to verify better the present invention, use prior art to be formed with heating part and the heating part that is formed with titanium nitride film of the present invention of titanium nitride film, place respectively substrate on the heating part, and form organic metallic diaphragm respectively in described substrate.In present embodiment, the organo-metallic film material of employing is titanium nitride film.The standard thickness of its described titanium nitride film is 153 dusts.
The thickness that is positioned at suprabasil titanium nitride film is taken multiple measurements respectively.As Fig. 8 and shown in Figure 9, be respectively the thickness distribution of titanium nitride film in the substrate of adopting prior art and the present invention's formation.Wherein, X-coordinate is for repeatedly to form the date of rete, and ordinate zou is the thickness of rete, and unit is dust.
As can be seen from Figure, after the formation method through the titanium nitride film of heating part of the present invention, the thickness distribution that forms rete in the substrate thickness that more is near the mark.
Certainly, titanium nitride film can also be other organo-metallic retes, finds through experiment, and it distributes compared with prior art, also standard and even more.Just be not described in detail herein.
According to the formation method of the heating unit of above-mentioned MOCVD, the present invention also provides a kind of MOCVD heating unit, comprising: the MOCVD heating part, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Cover the sealing coat of described heating part upper surface.Wherein, described sealing coat has smooth upper surface, and the heteropical numerical range of surface standard deviation of described sealing coat is 1.5 ~ 3.4.Described sealing coat can be titanium nitride film.Particularly, the heteropical definition of described surface standard deviation can be with reference to aforementioned.
According to the formation method of the heating unit of above-mentioned MOCVD, the present invention also provides a kind of film forming method of MOCVD, comprising: the MOCVD heating part is provided, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface; Remove the impurity element of described sealing coat; Place substrate at the heating part upper surface that is formed with sealing coat; Form film at substrate surface.
Particularly, described sealing coat is titanium nitride film; Impurity element comprises carbon, protium or does not consist of a kind of or combination in the nitrogen element of titanium nitride cell configuration in described sealing coat; The method of removing described impurity element is reactive ion etching.
Wherein, particularly, forming the embodiment of described sealing coat and remove the embodiment of described impurity element can be with reference to aforementioned corresponding the description.The film that forms on described substrate surface can be the films such as titanium nitride, and the technique that forms the films such as titanium nitride can form technique with reference to existing MOCVD, here repeats no more.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (16)
1. a MOCVD heating unit formation method, is characterized in that, comprising: the MOCVD heating part is provided, and described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface, described sealing coat is the titanium nitride film that utilizes MOCVD technique to form; Remove the impurity element of described sealing coat.
2. MOCVD heating unit formation method according to claim 1, is characterized in that, in described titanium nitride film impurity element comprise carbon, protium or not with a kind of or combination of the nitrogen element of the titanium elements Cheng Jian of titanium nitride cell configuration.
3. MOCVD heating unit formation method according to claim 2, is characterized in that, the method for removing described impurity element is reactive ion etching.
4. MOCVD heating unit formation method according to claim 3, is characterized in that, described reactive ion comprises a kind of of hydrogen ion and nitrogen ion or combination.
5. MOCVD heating unit formation method according to claim 4, is characterized in that, in described reactive ion etching, described reactive ion and described impurity element carry out including in reacted resultant a kind of of hydrocarbon gas or nitrogenous gas or combination.
6. MOCVD heating unit formation method according to claim 4, is characterized in that, described hydrogen ion formation method is for to ionize hydrogen, and the formation method of described nitrogen ion is for to ionize nitrogen.
7. MOCVD heating unit formation method according to claim 6, is characterized in that, the flow velocity of described hydrogen is 200sccm ~ 300sccm, and the flow velocity of described nitrogen is 300sccm ~ 400sccm.
8. MOCVD heating unit formation method according to claim 5, it is characterized in that, after removing described impurity element, described titanium nitride film has smooth upper surface, and the heteropical numerical range of surface standard deviation of described titanium nitride film is 1.5 ~ 3.4.
9. MOCVD heating unit formation method according to claim 2, it is characterized in that, the formation technique of described titanium nitride film is: adopting four dimethylammonio titaniums is raw material, makes described raw material thermolysis by described heating part, and the upper surface in described heating part forms titanium nitride film.
10. MOCVD heating unit formation method according to claim 9, is characterized in that, the temperature of described thermolysis is 400 ℃ ~ 500 ℃.
11. MOCVD heating unit formation method, is characterized in that according to claim 10, the thickness of described titanium nitride film is 3000 dusts ~ 3200 dusts.
12. the film forming method of MOCVD is characterized in that, comprising: the MOCVD heating part is provided, and described heating part has upper surface, described upper surface is used for placing the substrate for the treatment of deposit film; Form the sealing coat that covers described heating part upper surface, described sealing coat is the titanium nitride film that utilizes MOCVD technique to form; Remove the impurity element of described sealing coat; Place substrate at the heating part upper surface that is formed with sealing coat; Form film at substrate surface.
13. the film forming method of described MOCVD, is characterized in that according to claim 12, the interior impurity element of described titanium nitride film comprises carbon, protium or does not consist of a kind of or combination of the nitrogen element of titanium nitride cell configuration.
14. the film forming method of described MOCVD, is characterized in that according to claim 13, the method for removing described impurity element is reactive ion etching.
15. a MOCVD heating unit is characterized in that, comprising: the MOCVD heating part, described heating part has upper surface, and described upper surface is used for placing the substrate for the treatment of deposit film; Cover the sealing coat of described heating part upper surface, described sealing coat is the titanium nitride film that utilizes MOCVD technique to form.
16. described MOCVD heating unit, is characterized in that according to claim 15, described sealing coat has smooth upper surface, and the heteropical numerical range of surface standard deviation of described sealing coat is 1.5 ~ 3.4.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1133900A (en) * | 1995-03-28 | 1996-10-23 | 现代电子产业株式会社 | Method for improving quality of titanium nitride layer including carbon and oxygen |
| CN1742361A (en) * | 2003-02-06 | 2006-03-01 | 株式会社Eugene科技 | Heater of chemical vapor deposition apparatus for manufacturing a thin film |
| CN1768158A (en) * | 2003-02-04 | 2006-05-03 | 泰格尔公司 | Nanolayer deposition process |
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|---|---|---|---|---|
| JP2000077340A (en) * | 1998-09-02 | 2000-03-14 | Nec Kyushu Ltd | Normal pressure vapor growth device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1133900A (en) * | 1995-03-28 | 1996-10-23 | 现代电子产业株式会社 | Method for improving quality of titanium nitride layer including carbon and oxygen |
| CN1768158A (en) * | 2003-02-04 | 2006-05-03 | 泰格尔公司 | Nanolayer deposition process |
| CN1742361A (en) * | 2003-02-06 | 2006-03-01 | 株式会社Eugene科技 | Heater of chemical vapor deposition apparatus for manufacturing a thin film |
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| JP特开2000-77340A 2000.03.14 |
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