CN102343482A - Method for capturing specific laser processing beam spot through projection imaging - Google Patents
Method for capturing specific laser processing beam spot through projection imaging Download PDFInfo
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- CN102343482A CN102343482A CN2011102074631A CN201110207463A CN102343482A CN 102343482 A CN102343482 A CN 102343482A CN 2011102074631 A CN2011102074631 A CN 2011102074631A CN 201110207463 A CN201110207463 A CN 201110207463A CN 102343482 A CN102343482 A CN 102343482A
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Abstract
The invention discloses a method for capturing a special laser processing beam spot through projection imaging, belonging to the scope of semi-conductor manufacturing equipment. A series of transmitting graphics are designed on a photolithography mask, and the photolithography mask is moved through a driving mechanism so as to select a specific transmitting graphic on the photolithography mask. The incident laser beams pass through the specific transmitting graphic on the photolithography mask, then enter a projection imaging lens group and are projected and form an image on the surface of a wafer, forming a desired lasing beam spot. With sharp edges, the beam spot sufficiently restrains the uncertainty of process control in laser processing caused by the diffraction effect. On the other hand, since the series of transmitting graphics can be put on the photolithography mask and the ratio of the projection photolithographic system can be designed to be variable, the geometric shape and the size of the laser beam spot obtained through the method are freely adjustable. Therefore, the method can ensure to obtain ideal and evener process control effect in laser processing.
Description
Technical field
The invention belongs to the semiconductor manufacturing facility scope, particularly a kind of method that adopts the projection imaging mode to obtain specific laser processing bundle spot.
Background technology
Laser Processing is used for integrated circuit and relevant manufacturing field, and its concrete application comprises laser annealing, laser recrystalliza, laser assisted film deposition etc.
Because the restriction of beam spot size; If larger sized wafer all surfaces is carried out processed; Just must make the relative motion of formation between laser beam and the wafer, along with the passing in processing time, laser beam spot will move and cover whole wafer surface like this.For the Laser Processing of modes such as any employing laser scanning or step-scan, there is not any slit or overlapping in major requirement between two continuous sweep row.If be that above-mentioned situation has taken place; Then wafer surface can exist laser not have the effect or the zone of twice elaboration fully, and in modern times in the integrated circuit technique, on very little wafer surface is long-pending, can integrally produce a lot of transistor devices; Therefore even very a little bit smaller area; Its Laser Processing effect is different, also can influence a plurality of device performances in this zone, the process failure that has just caused Laser Processing to handle.
The technical method of handling hot spot seam problem has a variety of; Wherein a kind of for adopting the bundle spot of the linear special shape that descends of beamwidth; Comprise trapezoidal bundle spot, hexagonal pencil of forms spot etc.; Utilize the bundle spot of linear change part overlapping, go to carry out the addition compensation of total deposition laser energy, improve the interior uniformity of sheet of laser action.
Conventional laser beam spot is linear, and perhaps rectangle for bundle spot unconventional, special shape, can be employed in and on the light path of beam treatment the light beam baffle mechanism is set and obtains.
Because diffraction effect, on the limit of given shape bundle spot, angle etc. locates, and always has extra diffraction light, this a part of diffraction light equally can be to substrate chip generation effect, thereby brings the uncertainty in the control.For diffraction-limited light, the present invention proposes, and adopts projection imaging system, with the surface of particular geometric shapes projection imaging to wafer, and the laser action light beam bundle spot of the given shape of the spuious diffraction light that has been inhibited.
The present invention uses a reticle; The transparent figure of a series of special shapes and size is set on the reticle; According to arts demand, selected figure is placed the light path center, then such graphic projection is imaged onto the surface of wafer; The enlargement ratio of projection imaging is adjustable; Thereby can obtain different shape flexibly and easily with size and eliminated the light beam bundle spot of spuious diffraction light, and restraint with this that spot scans the surface of wafer or the processed of step-scan formula, can obtain the technology controlling and process effect of desirable more uniform Laser Processing processing.
Summary of the invention
The purpose of this invention is to provide a kind of method that adopts the projection imaging mode to obtain specific Laser Processing bundle spot; It is characterized in that a series of transparent figure of design on reticle 1 is through driving mechanism 2 moving photoetching versions 1; To select specific reticle transparent figure; Selected reticle transparent figure is placed among the beam path, through expansion bundle, even bundle and preliminary shaping incident laser light beam 5 above reticle through after the reticle transparent figure, get into the projection imaging set of lenses 3 below the reticle; Incident laser light beam 5 images in the surface of wafer 4 at projection imaging set of lenses 3 inner projections, forms required laser action bundle spot 7; Wherein, in this optical projection imaging system, as thing, be picture with the bundle spot on the wafer with the transparent figure on the reticle.
Said projection lens set is designed to one-sided telecentric beam path; At object space is that reticle one side is the heart far away, is that wafer one side is the non-heart far away in picture side, through the different focal position of wafer and projection lens set is set; May be adjusted to the picture multiplying power, thereby obtain the specific laser beam spot of adjustable dimension.
Transparent figure on the said reticle is linear with routine, and perhaps the laser beam spot of rectangular shape is the same, adopts trapezoidal or regular polygon; Wherein regular polygon is 4,5,6,7 or 8 limit shapes; Can realize Laser Processing equally to wafer surface; And on the masking layer of reticle the fin outside the plus, increase heat-sinking capability.
Said given shape bundle spot is the light beam baffle mechanism that respective shapes is set on the light path of beam treatment, covers a part of rim ray and obtains given shape bundle spot.
The invention has the beneficial effects as follows; Through with the mode of specific reticle transparent figure projection imaging to the wafer; Can obtain needed laser processing beam bundle spot, bundle spot edge is sharp keen, has fully suppressed because the uncertainty in the Laser Processing treatment process control that diffraction effect is brought.On the other hand; Owing on reticle, can place a series of transparent figure; And projection lithography system can be designed to no-load voltage ratio; Thereby the laser beam spot that finally obtains is fully flexibly adjustable on geometry and size, guarantees desirable and technology controlling and process effect more uniform Laser Processing processing.
Description of drawings:
Fig. 1 obtains the structural scheme of mechanism of given shape bundle spot for the projection imaging mode.
Among Fig. 1: 1. are reticle; 2. be the Drive Structure of moving photoetching version; 3. be the projection imaging lens group; 4. be wafer; 5. be incoming laser beam; 6. be through the light beam after the reticle; 7. be bundle spot in the wafer surface imaging.
The specific embodiment
The purpose of this invention is to provide a kind of method that adopts the projection imaging mode to obtain specific Laser Processing bundle spot.The present invention adopts a kind of projection imaging system to realize the beam shaping processing, except the bundle spot that obtains required shape, more can suppress to restraint the diffraction part at spot edge, obtains the sharpened edge of bundle spot.The composition of projection imaging system is following:
Projection imaging system generally is made up of three parts, and one is thing, and two is the imaging lens group, and three are screen and picture.The composition of projection imaging system is as shown in Figure 1.
Among the figure, a series of transparent figure of design on reticle 1 (on geometry main adopt wide with the centre, upwards or down gradually width to be reduced to zero figure be main as trapezoidal or regular polygon; Wherein regular polygon is 4,5,6,7 or 8 limit shapes), above reticle 1,, be projection imaging set of lenses 3 reticle 1 below for having passed through the incident laser light beam 5 that expands bundle, even bundle and preliminary shaping, wafer 4 place projection imaging set of lenses 3 under.Driving mechanism 2 is connected with reticle 1; Select specific reticle transparent figure to drive reticle 1; Selected reticle transparent figure is placed among the beam path, and incident laser light beam 5 through after the reticle transparent figure, gets into the projection imaging set of lenses 3 below the reticle above reticle; Incident laser light beam 5 images in the surface of wafer 4 at projection imaging set of lenses 3 inner projections, forms required laser action bundle spot 7; Therefore in this optical projection imaging system, with the transparent figure on the reticle as thing, this thing through with the 3 back projection imagings of projection imaging set of lenses in the surface of wafer 4, form the picture of required laser action bundle spot 7, size can centimetre magnitude.And on the masking layer of reticle the fin outside the plus, increase heat-sinking capability.
Need more annotatedly be, owing to designed a plurality of figures on the reticle, therefore have a plurality of things that can form images, the present invention selects specific thing to be used for imaging through driving mechanism.Particularly, drive reticle through modes such as motors and move, be selected, and form images through the projection imaging set of lenses so that different reticle transparent figure enters among the beam path.
Projection imaging set of lenses among the present invention for example, can be designed to one-sided telecentric beam path; At object space (reticle one side) is the heart far away, and in picture side (wafer one side) non-heart far away, through the different focal position of wafer is set; May be adjusted to the picture multiplying power, obtain the specific laser beam spot of adjustable dimension.
The present invention is imaging screen with the wafer, obtains the bundle spot of required given shape size above that.Through drivings such as motors, can make wafer be in the distance of promptly regulating on the different height between wafer and the projection imaging set of lenses, thereby can be in certain scope, the size of adjustment laser beam spot picture.
At last, projection imaging system according to the invention is to have certain requirements for incident illumination; As require the incident laser light beam through expanding bundle, even bundle and preliminary shaping; These can realize that mainly technical very maturation does not belong to content of the present invention through optical system.
Adopt described projection imaging system to realize the laser beam shaping processing, except the bundle spot that can obtain required shape, more can suppress to restraint the diffraction part at spot edge, obtain the sharpened edge of bundle spot, finally obtain better Laser Processing effect.
Claims (5)
1. method that adopts the projection imaging mode to obtain specific Laser Processing bundle spot; It is characterized in that, go up a series of transparent figure of design in reticle (1), through driving mechanism (2) moving photoetching version (1); To select specific reticle transparent figure; Selected reticle transparent figure is placed among the beam path, through expansion bundle, even bundle and preliminary shaping incident laser light beam (5) above reticle through after the reticle transparent figure, get into the projection imaging set of lenses (3) below the reticle; Incident laser light beam (5) images in the surface of wafer (4) at projection imaging set of lenses (3) inner projection, forms required laser action bundle spot (7); Wherein, in this optical projection imaging system, as thing, be picture with the bundle spot on the wafer with the transparent figure on the reticle.
2. obtain the method for specific Laser Processing bundle spot according to the said employing projection imaging of claim 1 mode; It is characterized in that said projection lens set is designed to one-sided telecentric beam path, is that reticle one side is the heart far away at object space; In picture side is that wafer one side is the non-heart far away; Through the different focal position of wafer and projection lens set is set, may be adjusted to the picture multiplying power, thereby obtain the specific laser beam spot of adjustable dimension.
3. obtain the method for specific Laser Processing bundle spot according to the said employing projection imaging of claim 1 mode; It is characterized in that; Transparent figure on the said reticle is linear with routine, and perhaps the laser beam spot of rectangular shape is the same, adopts trapezoidal or regular polygon; Wherein regular polygon is 4,5,6,7 or 8 limit shapes; Can realize Laser Processing equally to wafer surface.
4. obtain the method for specific Laser Processing bundle spot according to the said employing projection imaging of claim 1 mode; It is characterized in that; Said given shape bundle spot is the light beam baffle mechanism that respective shapes is set on the light path of beam treatment, covers a part of rim ray and obtains given shape bundle spot.
5. obtain the method for specific Laser Processing bundle spot according to the said employing projection imaging of claim 1 mode, it is characterized in that, the outer fin of plus increases its heat-sinking capability on the masking layer of reticle.
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| CN2011102074631A CN102343482A (en) | 2011-07-22 | 2011-07-22 | Method for capturing specific laser processing beam spot through projection imaging |
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| CN2011102074631A CN102343482A (en) | 2011-07-22 | 2011-07-22 | Method for capturing specific laser processing beam spot through projection imaging |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389485A (en) * | 2018-03-12 | 2018-08-10 | 北京工业大学 | A kind of incoherent non-coupled hot spot compound experiment device of multi-pass |
Citations (4)
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| JP2001038483A (en) * | 1999-07-27 | 2001-02-13 | Sumitomo Heavy Ind Ltd | Laser piercing processing method and processing device |
| CN101786200A (en) * | 2010-02-26 | 2010-07-28 | 华中科技大学 | Method for projection-type laser etching on free curved surface |
| US20100272959A1 (en) * | 2006-05-24 | 2010-10-28 | Oerlikon Balzers Coating (Uk) Limited | Method and unit for micro-structuring a moving substrate |
| CN102151984A (en) * | 2011-03-01 | 2011-08-17 | 华中科技大学 | Laser machining method and device applicable for complicated curved surface |
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- 2011-07-22 CN CN2011102074631A patent/CN102343482A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001038483A (en) * | 1999-07-27 | 2001-02-13 | Sumitomo Heavy Ind Ltd | Laser piercing processing method and processing device |
| US20100272959A1 (en) * | 2006-05-24 | 2010-10-28 | Oerlikon Balzers Coating (Uk) Limited | Method and unit for micro-structuring a moving substrate |
| CN101786200A (en) * | 2010-02-26 | 2010-07-28 | 华中科技大学 | Method for projection-type laser etching on free curved surface |
| CN102151984A (en) * | 2011-03-01 | 2011-08-17 | 华中科技大学 | Laser machining method and device applicable for complicated curved surface |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108389485A (en) * | 2018-03-12 | 2018-08-10 | 北京工业大学 | A kind of incoherent non-coupled hot spot compound experiment device of multi-pass |
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Application publication date: 20120208 |