CN102331552A - 一种太阳电池检测装置及应用方法 - Google Patents
一种太阳电池检测装置及应用方法 Download PDFInfo
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- CN102331552A CN102331552A CN201110212877A CN201110212877A CN102331552A CN 102331552 A CN102331552 A CN 102331552A CN 201110212877 A CN201110212877 A CN 201110212877A CN 201110212877 A CN201110212877 A CN 201110212877A CN 102331552 A CN102331552 A CN 102331552A
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000001514 detection method Methods 0.000 title abstract 3
- 238000001228 spectrum Methods 0.000 claims abstract description 49
- 238000004458 analytical method Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 10
- 229910052724 xenon Inorganic materials 0.000 claims description 17
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000003086 colorant Substances 0.000 claims description 11
- 230000003595 spectral effect Effects 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 9
- 150000002367 halogens Chemical class 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 238000003786 synthesis reaction Methods 0.000 claims description 2
- 238000004364 calculation method Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
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Priority Applications (1)
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CN2011102128773A CN102331552B (zh) | 2011-07-27 | 2011-07-27 | 一种太阳电池检测装置及应用方法 |
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CN2011102128773A CN102331552B (zh) | 2011-07-27 | 2011-07-27 | 一种太阳电池检测装置及应用方法 |
Publications (2)
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CN102331552A true CN102331552A (zh) | 2012-01-25 |
CN102331552B CN102331552B (zh) | 2012-08-22 |
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CN2011102128773A Active CN102331552B (zh) | 2011-07-27 | 2011-07-27 | 一种太阳电池检测装置及应用方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117226A (zh) * | 2011-03-18 | 2011-07-06 | 浪潮(北京)电子信息产业有限公司 | 一种资源调度系统及资源调度方法 |
CN102707218A (zh) * | 2012-06-16 | 2012-10-03 | 成都聚合科技有限公司 | 增强型便携光源led测试带散热器聚光光伏模块装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201000898Y (zh) * | 2006-12-19 | 2008-01-02 | 珈伟太阳能(武汉)有限公司 | 太阳能电池测试装置 |
WO2010024452A1 (ja) * | 2008-08-28 | 2010-03-04 | 日清紡ホールディングス株式会社 | 太陽電池の検査装置 |
-
2011
- 2011-07-27 CN CN2011102128773A patent/CN102331552B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201000898Y (zh) * | 2006-12-19 | 2008-01-02 | 珈伟太阳能(武汉)有限公司 | 太阳能电池测试装置 |
WO2010024452A1 (ja) * | 2008-08-28 | 2010-03-04 | 日清紡ホールディングス株式会社 | 太陽電池の検査装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117226A (zh) * | 2011-03-18 | 2011-07-06 | 浪潮(北京)电子信息产业有限公司 | 一种资源调度系统及资源调度方法 |
CN102707218A (zh) * | 2012-06-16 | 2012-10-03 | 成都聚合科技有限公司 | 增强型便携光源led测试带散热器聚光光伏模块装置 |
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CN102331552B (zh) | 2012-08-22 |
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Owner name: XIA QINGFENG Free format text: FORMER OWNER: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY CO., LTD. Effective date: 20130814 |
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Free format text: CORRECT: ADDRESS; FROM: 213300 CHANGZHOU, JIANGSU PROVINCE TO: 213022 CHANGZHOU, JIANGSU PROVINCE |
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Effective date of registration: 20130814 Address after: 213022 No. 376 Hanjiang Road, Xinbei District, Jiangsu, Changzhou Patentee after: Xia Qingfeng Address before: 213300 Liyang province Jiangsu City Licheng town Wuhu Road No. 168 Patentee before: CHANGZHOU SHICHUANG ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20170817 Address after: 315336, No. 15, Tongji Industrial Park, Hangzhou Bay area, Ningbo, Cixi, Zhejiang Patentee after: NINGBO DOLAR NEW MATERIAL TECHNOLOGY CO.,LTD. Address before: 213022 No. 376 Hanjiang Road, Xinbei District, Jiangsu, Changzhou Patentee before: Xia Qingfeng |
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Effective date of registration: 20231115 Address after: No. 189 Guangming Road, Zhuangshi street, Zhenhai District, Ningbo City, Zhejiang Province Patentee after: China Science and Technology (Ningbo) Co.,Ltd. Address before: 315336 building 15, Tongji Industrial Park, Hangzhou Bay New District, Cixi City, Ningbo City, Zhejiang Province Patentee before: NINGBO DOLAR NEW MATERIAL TECHNOLOGY CO.,LTD. |
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