CN102295288B - 24-pair silicon rod polysilicon reduction furnace power supply system - Google Patents
24-pair silicon rod polysilicon reduction furnace power supply system Download PDFInfo
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- CN102295288B CN102295288B CN 201110154310 CN201110154310A CN102295288B CN 102295288 B CN102295288 B CN 102295288B CN 201110154310 CN201110154310 CN 201110154310 CN 201110154310 A CN201110154310 A CN 201110154310A CN 102295288 B CN102295288 B CN 102295288B
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Abstract
The invention discloses a 24-pair silicon rod polysilicon reduction furnace power supply system. According to the present invention, 24 silicon rod pairs in the polysilicon reduction furnace are arranged to form a first outer ring, a second outer ring, a third outer ring, a first middle ring, a second middle ring and an inner ring; the power supply system comprises an operation power supply, a high voltage start power, a three-phase three-winding transformer, a first power cabinet, a second power cabinet, a third power cabinet, a switch cabinet and a control cabinet. With the 24-pair silicon rod polysilicon reduction furnace power supply system provided by the present invention, the occupation area is reduced; in addition, the silicon rod pairs in the multicrystalline silicon reduction furnace are arranged to form the outer rings, the middle rings and the inner ring, only the silicon rod pairs positioned on the outer rings are started through the high voltage start power, such that only the electrodes and the electric cables corresponding to the silicon rod pairs positioned on the outer rings need to be prepared from the materials with high insulation grade; compared to the 24-pair silicon rod polysilicon reduction furnace power supply system in the prior art, the cost for the electrodes and the electric cables can be reduced through the reduction furnace power supply system provided by the present invention.
Description
Technical field
The invention belongs to technical field of polysilicon production, relate in particular to a kind of 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems.
Background technology
Silicon materials are most important functions materials in semi-conductor industry, electronics and information industry and the solar-energy photo-voltaic cell industry, and polysilicon is as unique raw material of preparation silicon single crystal and the material of production solar cell, and its demand increases day by day.Production of polysilicon enterprise is in order to reduce energy consumption, to the more and more large-scale change of the design selection of polycrystalline silicon reducing furnace, by 3～12 pairs of original rods be developed to gradually 24 pairs of rods and more than.
At present, for the power supply of 24 pairs of excellent polycrystalline silicon reducing furnaces, mainly be to adopt the power supply system of 12 pairs of excellent polycrystalline silicon reducing furnaces of two covers to realize that its structure as shown in Figure 1.This power supply system comprises three-phase ac transformer, 2 cover high voltage startup power supplys, 6 power cabinets, 6 isolation switching cabinets and 2 housings of 2 10 kilovolts, 24 silicon rods are to being connected with the high voltage startup power supply respectively, utilize the high voltage startup power supply puncture silicon rod to after, 24 silicon rods are powered to switching to by power cabinet.
The power supply system floor space of above-mentioned 24 pairs of excellent polycrystalline silicon reducing furnaces is very large, and the production of polysilicon place is limited.Therefore, the floor space that how to reduce 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems is those skilled in the art's technical problems in the urgent need to address.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, can reduce the floor space of power supply system.
For achieving the above object, the invention provides following technical scheme:
A kind of 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, 24 silicon rods in the described polycrystalline silicon reducing furnace are arranged being outer shroud, middle ring and interior ring, be positioned at the silicon rod of described outer shroud to being divided into outer shroud one, outer shroud two and outer shroud three, be arranged in the silicon rod of described ring to being divided into ring one and ring two, described power supply system comprises operation power supply, high voltage startup power supply, three-phase three-winding transformer, the first power cabinet, the second power cabinet, the 3rd power cabinet, switches cabinet and housing; Wherein,
Every phase high-tension side winding of described three-phase three-winding transformer is connected with described operation power supply, and every phase medium voltage side winding and low-tension side winding arrange respectively tap in a plurality of minutes and a terminal tap;
The one L line of described the first power cabinet is successively by the first switch circuit, the first electron recombination switch is connected with minute tap of the first-phase medium voltage side winding of described three-phase three-winding transformer, the one N line is connected with the terminal tap of the first-phase medium voltage side winding of described three-phase three-winding transformer, the 2nd L line is successively by the second switch circuit, the second electron recombination switch is connected with minute tap of the first-phase low-tension side winding of described three-phase three-winding transformer, the 2nd N line is connected with the terminal tap of the first-phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at outer shroud one is to being series between a described L line and the N line, and described silicon rod at outer shroud two is to being series between described the 2nd L line and the 2nd N line;
The 3rd L line of described the second power cabinet is successively by the 3rd switch circuit, the 3rd electron recombination switch is connected with minute tap of the second-phase medium voltage side winding of described three-phase three-winding transformer, the 3rd N line is connected with the terminal tap of the second-phase medium voltage side winding of described three-phase three-winding transformer, the 4th L line is connected by minute tap of quadrielectron combination switch with the second-phase low-tension side winding of described three-phase three-winding transformer, the 4th N line is connected with the terminal tap of the second-phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at outer shroud three is to being series between described the 3rd L line and the 3rd N line, and described silicon rod at middle ring one is to being connected in by the first switching circuit between described the 2nd L line and the 2nd N line;
The 5th L line of described the 3rd power cabinet is connected by minute tap of the 5th electron recombination switch with the third phase medium voltage side winding of described three-phase three-winding transformer, the 5th N line is connected with the terminal tap of the third phase medium voltage side winding of described three-phase three-winding transformer, the 6th L line is connected by minute tap of the 6th electron recombination switch with the third phase low-tension side winding of described three-phase three-winding transformer, the 6th N line is connected with the terminal tap of the third phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at middle ring two is to being connected in by the second switching circuit between described the 5th L line and the 5th N line, and described silicon rod at interior ring is to being connected in by the 3rd switching circuit between described the 6th L line and the 6th N line;
Described switching cabinet comprises isolator, the first sub-switch, the second sub-switch and the 3rd sub-switch, described isolator is connected with described high voltage startup power supply, the described a plurality of silicon rods of outer shroud one that are positioned at are to being connected with described isolator by the described first sub-switch, and pass through the described first sub-switch and isolator ground connection with the coupling end of a described N line, the described a plurality of silicon rods of outer shroud two that are positioned at are to being connected with described isolator by the described second sub-switch, and pass through the described second sub-switch and isolator ground connection with the coupling end of described the 2nd N line, the described a plurality of silicon rods of outer shroud three that are positioned at are to being connected with described isolator by the described the 3rd sub-switch, and pass through the described the 3rd sub-switch and isolator ground connection with the coupling end of described the 3rd N line;
Described housing is used for controlling described the first power cabinet, the second power cabinet, the 3rd power cabinet and switches cabinet.
This shows, in 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems disclosed by the invention, include only a three-phase three-winding transformer, three power cabinets, a switching cabinet and a housing, compare with existing 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, reduced floor space; In addition, silicon rod in the polycrystalline silicon reducing furnace is arranged being outer shroud, middle ring and interior ring, the silicon rod that only is positioned at outer shroud is to by the high voltage startup power initiation, therefore only having with the silicon rod that is positioned at outer shroud need to adopt high insulation level material to make to corresponding electrode and cable, compare with existing 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, can reduce the expense that electrode and cable produce.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of existing 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems;
Fig. 2 is the right structural representation of silicon rod;
Fig. 3 is the right distribution schematic diagram of silicon rod in 24 pairs of excellent polycrystalline silicon reducing furnaces disclosed by the invention;
Fig. 4 is the structural representation of a kind of 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems disclosed by the invention.
Embodiment
For the purpose, technical scheme and the advantage that make the embodiment of the invention clearer, below in conjunction with the accompanying drawing in the embodiment of the invention, technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
The present invention discloses a kind of 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, can reduce the floor space of power supply system.
Be provided with a plurality of silicon rods in the polycrystalline silicon reducing furnace, before shove charge silicon rod be overlapped to form several loop lines, each loop line forms (as shown in Figure 2) by two perpendicular silicon rods 11 and a horizontal silicon rod 12, and each loop line is a silicon rod pair.Two perpendicular silicon rods 11 of each silicon rod centering are connected on respectively on two electrodes at the bottom of the reduction furnace, and electrode is plugged respectively, and conduction heating is carried out in the loop that is formed by two perpendicular silicon rods 11 and horizontal silicon rod 12, and each silicon rod is to being equivalent to an ohmic load.
In the present invention, 24 silicon rods in the polycrystalline silicon reducing furnace are arranged being outer shroud, middle ring and interior ring, and, be positioned at the silicon rod of outer shroud to being further divided into outer shroud one, outer shroud two and outer shroud three, be arranged in the silicon rod of ring to being further divided into ring one and ring two (as shown in Figure 3).Wherein, can the quantity that the silicon rod that be arranged in outer shroud one, outer shroud two, outer shroud three, ring one, ring two and ring is right be set to respectively 4.
Referring to Fig. 4, Fig. 4 is the structural representation of the power supply system of a kind of 24 pairs of excellent polycrystalline silicon reducing furnaces disclosed by the invention.This power supply system comprises: operation power supply (not shown), high voltage startup power supply (not shown), three-phase three-winding transformer 1, the first power cabinet 2, the second power cabinet 3, the 3rd power cabinet 4, switching cabinet 5 and housing 6.
Wherein, every phase high-tension side winding of three-phase three-winding transformer 1 is connected with the operation power supply, and every phase medium voltage side winding arranges respectively tap in a plurality of minutes and a terminal tap with every mutually low-tension side winding.Be preferably in the present invention, every phase medium voltage side winding and low-tension side winding have tap in 5 minutes.
The first power cabinet 2 comprises: the first electron recombination K switch 11, the first switch circuit K21, a L line L1, a N line N1, the second electron recombination K switch 12, second switch circuit K22, the 2nd L line L2 and the 2nd N line N2.The one L line L1 is connected with minute tap of the first-phase medium voltage side winding of three-phase three-winding transformer by the first switch circuit K21, the first electron recombination K switch 11 successively, the one N line N1 is connected with the terminal tap of the first-phase medium voltage side winding of three-phase three-winding transformer, the 2nd L line L2 is connected with minute tap of the first-phase low-tension side winding of three-phase three-winding transformer by second switch circuit K22, the second electron recombination K switch 12 successively, and the 2nd N line N2 is connected with the terminal tap of the first-phase low-tension side winding of three-phase three-winding transformer.A plurality of silicon rods at outer shroud one are series at R1, R2, R3 and R4 between a L line L1 and the N line N1, R5, R6, R7 and R8 are series between the 2nd L line L2 and the 2nd N line N2 at a plurality of silicon rods of outer shroud two.
The second power cabinet 3 comprises: the 3rd electron recombination K switch 13, the 3rd switch circuit K23, the 3rd L line L3, the 3rd N line N3, quadrielectron combination switch K14, the first switching circuit K31, the 4th L line L4 and the 4th N line N4.The 3rd L line L3 is connected with minute tap of the second-phase medium voltage side winding of three-phase three-winding transformer by the 3rd switch circuit K23, the 3rd electron recombination K switch 13 successively, the 3rd N line N3 is connected with the terminal tap of the second-phase medium voltage side winding of three-phase three-winding transformer, the 4th L line L4 is connected with minute tap of the second-phase low-tension side winding of three-phase three-winding transformer by quadrielectron combination switch K14, and the 4th N line N4 is connected with the terminal tap of the second-phase low-tension side winding of three-phase three-winding transformer.A plurality of silicon rods at outer shroud three are series at R9, R10, R11 and R12 between the 3rd L line L3 and the 3rd N line N3, at a plurality of silicon rods of middle ring one R13, R14, R15 and R16 are connected in by the first switching circuit K31 between the 2nd L line L2 and the 2nd N line N2.
The 3rd power cabinet 4 comprises: the 5th electron recombination K switch 15, the second switching circuit K32, the 5th L line L5, the 5th N line N5, the 6th electron recombination K switch 16, the 3rd switching circuit K33, the 6th L line L6 and the 6th N line N6.The 5th L line L5 is connected by minute tap of the 5th electron recombination K switch 15 with the third phase medium voltage side winding of three-phase three-winding transformer, the 5th N line N5 is connected with the terminal tap of the third phase medium voltage side winding of three-phase three-winding transformer, the 6th L line L6 is connected by minute tap of the 6th electron recombination K switch 16 with the third phase low-tension side winding of three-phase three-winding transformer, and the 6th N line N6 is connected with the terminal tap of the third phase low-tension side winding of three-phase three-winding transformer.A plurality of silicon rods at middle ring two are connected in by the second switching circuit K32 between the 5th L line L5 and the 5th N line N5 R17, R18, R19 and R20, at a plurality of silicon rods of interior ring R21, R22, R23 and R24 are connected in by the 3rd switching circuit K33 between the 6th L line L6 and the 6th N line N6.
Switching cabinet 5 comprises: isolator GLK, the first sub-switch QH1, the second sub-switch QH2 and the 3rd sub-switch QH3.Isolator GLK is connected with the high voltage startup power supply, the a plurality of silicon rods that are positioned at outer shroud one are connected the first sub-switch QH1 to R1, R2, R3 and R4 and are connected with isolator GLK, and pass through the first sub-switch QH1 and isolator GLK ground connection with the coupling end (being the end that R4 is connected with a N line N1) of a N line N1; The a plurality of silicon rods that are positioned at outer shroud two are connected the second sub-switch QH2 to R5, R6, R7 and R8 and are connected with isolator GLK, and pass through the second sub-switch QH2 and isolator GLK ground connection with the coupling end (being the end that R8 is connected with the 2nd N line N2) of the 2nd N line N2; The a plurality of silicon rods that are positioned at outer shroud three are connected the 3rd sub-switch QH3 to R13, R14, R15 and R16 and are connected with isolator GLK, and pass through the 3rd sub-switch QH3 and isolator GLK ground connection with the coupling end (being the end that R16 is connected with the 3rd N line N3) of the 3rd N line N3.
The first electron recombination K switch 11, the second electron recombination K switch 12, the 3rd electron recombination K switch 13, quadrielectron combination switch K14, the 5th electron recombination K switch 15 and the 6th electron recombination K switch 16 can adopt same structure.
The structure of each electron recombination switch can as shown in Figure 4, comprise: a plurality of inverse parallel unidirectional thyristors, a plurality of inverse parallel unidirectional thyristors are connected between minute tap and L line of winding.For example, the first electron recombination K switch 11 comprises 5 inverse parallel unidirectional thyristors, taps in 5 minutes of the first-phase medium voltage side winding of three-phase three-winding transformer 1 are connected with an end of 1 inverse parallel unidirectional thyristor respectively, and the other end of 5 inverse parallel unidirectional thyristors is connected to a L line L1 by the first switch circuit K21.Each electron recombination switch also can be comprised of a plurality of bidirectional thyristors, and a plurality of bidirectional thyristors are connected between minute tap and L line of winding, namely with the inverse parallel unidirectional thyristor among bidirectional thyristor replacement Fig. 4.Housing 6 is controlled each medium voltage side winding voltage different with the output of low-tension side winding of three-phase three-winding transformer 1 by to the different tripping pulse of each thyristor input.
In the enforcement, the first switch circuit K21, second switch circuit K22 and the 3rd switch circuit K23 can be isolating switch.When the main contact of isolating switch is closed, the operation power supply of processing through three-phase three-winding transformer 1 be loaded into be positioned at outer shroud one, outer shroud two and outer shroud three silicon rod to upper.
Because the price comparison of isolating switch is expensive, the present invention discloses the structure of another kind of the first switch circuit K21, second switch circuit K22 and the 3rd switch circuit K23, as shown in Figure 4: the first switch circuit K21 comprises the first main contact of the first isolating switch, and the contactor that is parallel to these the first main contact two ends; Second switch circuit K22 comprises the second main contact of the first isolating switch, and the contactor that is parallel to these the second main contact two ends; The 3rd switch circuit K23 is the second isolating switch.Because each isolating switch has two main contacts, therefore the first switch circuit K21 and second switch circuit K22 share an isolating switch, can reduce the cost of power supply system.
The 13 silicon rod at middle ring one is series at R16 between the 4th L line L4 and the 4th N line N4 R15 and the 16 silicon rod R14, the 15 silicon rod R13, the 14 silicon rod, the 17 silicon rod at middle ring two is series at R20 between the 5th L line L5 and the 5th N line N5 R19 and the 20 silicon rod R18, the 19 silicon rod R17, the 18 silicon rod, at the 21 silicon rod of interior ring R21, the 22 silicon rod is series at R24 between the 6th L line L6 and the 6th N line N6 R23 and the 24 silicon rod R22, the 23 silicon rod.The structure of the first switching circuit K31, the second switching circuit K32 and the 3rd switching circuit K33 as shown in Figure 4.The first switching circuit K31 comprises: be connected in the 14 silicon rod to the right common port of, the 15 silicon rod and the switch between the 4th N line.The second switching circuit K32 comprises: be connected in the 18 silicon rod to R18, the 19 silicon rod to the common port of R19 and the switch between the 5th N line N5.The 3rd switching circuit K33 comprises: be connected in the 22 silicon rod to R22, the 23 silicon rod to the common port of R23 and the switch between the 6th N line.
Preferably, the first switching circuit K31 also comprise be connected in the 13 silicon rod to R13, the 14 silicon rod to the common port of R14 and the switch between the 4th N line N4, be connected in the 15 silicon rod to R15, the 16 silicon rod to the common port of R16 and the switch between the 4th N line N4; The second switching circuit K32 also comprise be connected in the 17 silicon rod to R17, the 18 silicon rod to the common port of R18 and the switch between the 5th N line N5, be connected in the 19 silicon rod to R19, the 20 silicon rod to the common port of R20 and the switch between the 5th N line N5; The 3rd switching circuit K33 also comprise be connected in the 21 silicon rod to R21, the 22 silicon rod to the common port of R22 and the switch between the 6th N line N6, be connected in the 23 silicon rod to R23, the 24 silicon rod to the common port of R24 and the switch between the 6th N line N6.
The below describes the operational process of above-mentioned 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems.
One, guarantees that the first switch circuit K21, second switch circuit K22, the 3rd switch circuit K23, isolator GLK, the first sub-switch QH1, the second sub-switch QH2, the 3rd sub-switch QH3 all are in off-state, switch among the first switching circuit K31, the second switching circuit K32 and the 3rd switching circuit K33 all is in closure state, and this moment, 24 silicon rods were not to all accessing power supply.
Two, closed isolator GLK, closed the first sub-switch QH1 afterwards, the access of high voltage startup power supply is arranged in the silicon rod of outer shroud one to R1, R2, R3 and R4, within very short time, change the conductive characteristic right to rod, it is right to rod to make electric current pass through by force, puncture, the silicon rod that is positioned at outer shroud one begins heating to after puncturing, to other silicon rods to toasting.In this process, silicon rod passes through the first sub-switch QH1 and isolator GLK ground connection to the end that R4 is connected with a N line N1, and first switch circuit K21 be in off-state, play the buffer action between three-phase three-winding transformer and the high voltage startup power supply, prevent that the high voltage startup power supply from causing damage to three-phase three-winding transformer.When the silicon rod that is arranged in outer shroud one reaches 10 amperes to the striking current of R1, R2, R3 and R4, and after lasting 1 minute, disconnect the first sub-switch QH1, the contactor among closed the first switch circuit K21 (among the figure indicate) afterwards, this moment, the silicon rod at outer shroud one was series at R1, R2, R3 and R4 between a L line L1 and the N line N1, was its power supply by the operation power supply after processing through three-phase three-winding transformer 1.
Three, closed the second sub-switch QH2, the silicon rod that the access of high voltage startup power supply is arranged in outer shroud two are to R5, R6, R7 and R8, and the silicon rod that is positioned at outer shroud two begins heating to after puncturing, to other silicon rods to toasting.In this process, the end that silicon rod is connected with the 2nd N line N2 R8 by the second sub-switch QH2 and and isolator GLK ground connection, and second switch circuit K22 is in off-state, play the buffer action between three-phase three-winding transformer and the high voltage startup power supply, prevent that the high voltage startup power supply from causing damage to three-phase three-winding transformer.When the silicon rod that is positioned at outer shroud two to R5, R6, striking current among R7 and the R8 reaches 10 amperes, and after lasting 1 minute, disconnect the second sub-switch QH2, the contactor among the closed second switch circuit K22 (among the figure indicate) afterwards, be positioned at the silicon rod of outer shroud two to R5 this moment, R6, R7 and R8 are series between the 2nd L line L2 and the 2nd N line N2, be its power supply by the operation power supply after processing through three-phase three-winding transformer 1, moving an end after the time, disconnect the contactor among the first switch circuit K21 and the second switch circuit K22, the first main contact of closed the first isolating switch and the second main contact.
Four, closed the 3rd sub-switch QH3, the silicon rod that the access of high voltage startup power supply is arranged in outer shroud three are to R9, R10, R11 and R12, and the silicon rod that is positioned at outer shroud three begins heating to after puncturing, to other silicon rods to toasting.In this process, the end that silicon rod is connected with the 3rd N line N3 R12 by the 3rd sub-switch QH3 and and isolator GLK ground connection, and the 3rd switch circuit K22 be in off-state, play the buffer action between three-phase three-winding transformer and the high voltage startup power supply, prevent that the high voltage startup power supply from causing damage to three-phase three-winding transformer.When the silicon rod that is arranged in outer shroud three reaches 10 amperes to the striking current of R9, R10, R11 and R12, and after lasting 1 minute, disconnect the 3rd sub-switch QH3, closed the 3rd switch circuit K23 afterwards, this moment, the silicon rod at outer shroud three was series at R9, R10, R11 and R12 between the 3rd L line L3 and the 3rd N line N3, was its power supply by the operation power supply after processing through three-phase three-winding transformer 1.
Five, be arranged in outer shroud one, outer shroud two and outer shroud three after puncturing heating to the silicon rod that is arranged in ring one, ring two and ring to carrying out Baking out, when the right temperature of the silicon rod that is arranged in ring one, ring two and ring rises to 300 ℃, can be directly by the operation power initiation.
Take the silicon rod that is arranged in ring one R13, R14, R15 and R16 are described as example.At initial time, each thyristor among the quadrielectron combination switch K14 all is in off state, and each switch among the first switching circuit K31 is all closed.At first, by housing 6 to quadrielectron combination switch K14 output control pulse, control the inverse parallel unidirectional thyristor conducting among the quadrielectron combination switch K14, this moment silicon rod to the end of R13 be connected with the 4th L line L4, the other end is connected with the 4th N line N4, move power supply and be carried in silicon rod to the R13 two ends; Then, disconnect being connected in common port and the switch between the 4th N line N4 of silicon rod to R13, R14, this moment, silicon rod was series between the 4th L line L4 and the 4th N line N4 R13 and R14; Afterwards, disconnect being connected in common port and the switch between the 4th N line N4 of silicon rod to R14, R15, this moment, silicon rod was series between the 4th L line L4 and the 4th N line N4 R13, R14 and R15; At last, disconnect being connected in common port and the switch between the 4th N line N4 of silicon rod to R15, R16, this moment, silicon rod was series between the 4th L line L4 and the 4th N line N4 R13, R14, R15 and R16.
It is consistent to be arranged in the right start-up course of the right start-up course of the silicon rod of ring two and ring and the silicon rod that is arranged in ring one, does not repeat them here.
In 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems disclosed by the invention, include only a three-phase three-winding transformer, three power cabinets, one switches cabinet and a housing, compare with existing 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, reduced floor space, and the silicon rod in the polycrystalline silicon reducing furnace is to being outer shroud, middle ring and interior ring are arranged, the silicon rod that only is positioned at outer shroud is to by the high voltage startup power initiation, therefore only having with the silicon rod that is positioned at outer shroud need to adopt high insulation level material to make to corresponding electrode and cable, compare with existing 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, can reduce the expense that electrode and cable produce.
In the polycrystalline silicon reducing furnace operational process, will be to electrode power supply and the water coolant of furnace bottom, mainly by being set, water-cooled tube supplies water to electrode at present, simultaneously between power cabinet and electrode cable being set powers, and the furnace bottom limited space of reduction furnace, cable and water-cooled tube can occupy very large furnace bottom space, cause the inconvenience to the work of reduction furnace repair and maintenance.In the above-mentioned disclosed power supply system of the present invention, the first power cabinet 2, the second power cabinet 3 and the 3rd power cabinet 4 all are connected to the electrode of polycrystalline silicon reducing furnace by water-cooled cable, can be simultaneously to electrode power supply and water supply by water-cooled cable, can save to greatest extent the furnace bottom space, facilitate for the repair and maintenance work of reduction furnace.
Preferably, in the above-mentioned disclosed power supply system of the present invention, the high-tension side winding of three-phase three-winding transformer 1 is 35 kilovolts, can reduce the breaking current of transformer medium voltage side and low-tension side, is conducive to selection and the safe operation of components and parts.
Each embodiment adopts the mode of going forward one by one to describe in this specification sheets, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can in the situation that does not break away from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. 24 pairs of excellent polycrystalline silicon reducing furnace power supply systems, it is characterized in that, 24 silicon rods in the described polycrystalline silicon reducing furnace are arranged being outer shroud, middle ring and interior ring, be positioned at the silicon rod of described outer shroud to being divided into outer shroud one, outer shroud two and outer shroud three, be arranged in the silicon rod of described ring to being divided into ring one and ring two, described power supply system comprises operation power supply, high voltage startup power supply, three-phase three-winding transformer, the first power cabinet, the second power cabinet, the 3rd power cabinet, switches cabinet and housing; Wherein,
Every phase high-tension side winding of described three-phase three-winding transformer is connected with described operation power supply, and every phase medium voltage side winding and low-tension side winding arrange respectively tap in a plurality of minutes and a terminal tap;
The one L line of described the first power cabinet is successively by the first switch circuit, the first electron recombination switch is connected with minute tap of the first-phase medium voltage side winding of described three-phase three-winding transformer, the one N line is connected with the terminal tap of the first-phase medium voltage side winding of described three-phase three-winding transformer, the 2nd L line is successively by the second switch circuit, the second electron recombination switch is connected with minute tap of the first-phase low-tension side winding of described three-phase three-winding transformer, the 2nd N line is connected with the terminal tap of the first-phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at outer shroud one is to being series between a described L line and the N line, and described silicon rod at outer shroud two is to being series between described the 2nd L line and the 2nd N line;
The 3rd L line of described the second power cabinet is successively by the 3rd switch circuit, the 3rd electron recombination switch is connected with minute tap of the second-phase medium voltage side winding of described three-phase three-winding transformer, the 3rd N line is connected with the terminal tap of the second-phase medium voltage side winding of described three-phase three-winding transformer, the 4th L line is connected by minute tap of quadrielectron combination switch with the second-phase low-tension side winding of described three-phase three-winding transformer, the 4th N line is connected with the terminal tap of the second-phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at outer shroud three is to being series between described the 3rd L line and the 3rd N line, and described silicon rod at middle ring one is to being connected in by the first switching circuit between described the 2nd L line and the 2nd N line;
The 5th L line of described the 3rd power cabinet is connected by minute tap of the 5th electron recombination switch with the third phase medium voltage side winding of described three-phase three-winding transformer, the 5th N line is connected with the terminal tap of the third phase medium voltage side winding of described three-phase three-winding transformer, the 6th L line is connected by minute tap of the 6th electron recombination switch with the third phase low-tension side winding of described three-phase three-winding transformer, the 6th N line is connected with the terminal tap of the third phase low-tension side winding of described three-phase three-winding transformer, described silicon rod at middle ring two is to being connected in by the second switching circuit between described the 5th L line and the 5th N line, and described silicon rod at interior ring is to being connected in by the 3rd switching circuit between described the 6th L line and the 6th N line;
Described switching cabinet comprises isolator, the first sub-switch, the second sub-switch and the 3rd sub-switch, described isolator is connected with described high voltage startup power supply, the described a plurality of silicon rods of outer shroud one that are positioned at are to being connected with described isolator by the described first sub-switch, and pass through the described first sub-switch and isolator ground connection with the coupling end of a described N line, the described a plurality of silicon rods of outer shroud two that are positioned at are to being connected with described isolator by the described second sub-switch, and pass through the described second sub-switch and isolator ground connection with the coupling end of described the 2nd N line, the described a plurality of silicon rods of outer shroud three that are positioned at are to being connected with described isolator by the described the 3rd sub-switch, and pass through the described the 3rd sub-switch and isolator ground connection with the coupling end of described the 3rd N line;
Described housing is used for controlling described the first power cabinet, the second power cabinet, the 3rd power cabinet and switches cabinet.
2. power supply system according to claim 1, it is characterized in that: described the first electron recombination switch, the second electron recombination switch, the 3rd electron recombination switch, quadrielectron combination switch, the 5th electron recombination switch are identical with the 6th electron recombination construction of switch, comprise: a plurality of bidirectional thyristors, described a plurality of bidirectional thyristors are connected between minute tap and L line of winding.
3. power supply system according to claim 1, it is characterized in that: described the first electron recombination switch, the second electron recombination switch, the 3rd electron recombination switch, quadrielectron combination switch, the 5th electron recombination switch are identical with the 6th electron recombination construction of switch, comprise: a plurality of inverse parallel unidirectional thyristors, described a plurality of inverse parallel unidirectional thyristors are connected between minute tap and L line of winding.
4. power supply system according to claim 1, it is characterized in that: described the first switch circuit, second switch circuit and the 3rd switch circuit are isolating switch.
5. power supply system according to claim 1, it is characterized in that: described the first switch circuit comprises the first main contact of the first isolating switch, and the contactor that is parallel to described the first main contact two ends; Described second switch circuit comprises the second main contact of the first isolating switch, and the contactor that is parallel to described the second main contact two ends; Described the 3rd switch circuit is the second isolating switch.
6. power supply system according to claim 1 is characterized in that, outer shroud one, outer shroud two, outer shroud three, middle ring one, middle ring two and interior ring all comprise 4 silicon rods pair.
7. power supply system according to claim 6 is characterized in that,
The 13 silicon rod of middle ring one to, the 14 silicon rod to, the 15 silicon rod to and the 16 silicon rod to being series between described the 4th L line and the 4th N line, described the first switching circuit comprises: be connected in described the 14 silicon rod to the right common port of, the 15 silicon rod and the switch between described the 4th N line;
The 17 silicon rod of middle ring two to, the 18 silicon rod to, the 19 silicon rod to and the 20 silicon rod to being series between described the 5th L line and the 5th N line, described the second switching circuit comprises: be connected in described the 18 silicon rod to the right common port of, the 19 silicon rod and the switch between described the 5th N line;
The 21 silicon rod of interior ring to, the 22 silicon rod to, the 23 silicon rod to and the 24 silicon rod to being series between described the 6th L line and the 6th N line, described the 3rd switching circuit comprises: be connected in described the 22 silicon rod to the right common port of, the 23 silicon rod and the switch between described the 6th N line.
8. power supply system according to claim 7 is characterized in that,
Described the first switching circuit also comprises and is connected in described the 13 silicon rod to the right common port of, the 14 silicon rod and the switch between described the 4th N line, is connected in described the 15 silicon rod to the right common port of, the 16 silicon rod and the switch between described the 4th N line;
Described the second switching circuit also comprises and is connected in described the 17 silicon rod to the right common port of, the 18 silicon rod and the switch between described the 5th N line, is connected in described the 19 silicon rod to the right common port of, the 20 silicon rod and the switch between described the 5th N line;
Described the 3rd switching circuit also comprises and is connected in described the 21 silicon rod to the right common port of, the 22 silicon rod and the switch between described the 6th N line, is connected in described the 23 silicon rod to the right common port of, the 24 silicon rod and the switch between described the 6th N line.
9. power supply system according to claim 1 is characterized in that, described the first power cabinet, the second power cabinet and the 3rd power cabinet all are connected to the electrode of described 24 pairs of excellent polycrystalline silicon reducing furnaces by water-cooled cable.
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| CN102608925B (en) * | 2012-02-04 | 2013-07-31 | 南京因泰莱电器股份有限公司 | Power supply control device for polycrystalline silicon reduction furnace |
| CN103613099B (en) * | 2013-11-19 | 2015-10-14 | 新特能源股份有限公司 | 48 pairs of excellent polycrystalline silicon reducing furnace power supply systems and starting method |
| CN104003394B (en) * | 2014-06-11 | 2016-04-06 | 陕西天宏硅材料有限责任公司 | Polycrystalline silicon rod reduction furnace electrical system and starting method thereof |
| CN104714443B (en) * | 2014-12-30 | 2017-08-15 | 北京京仪椿树整流器有限责任公司 | A kind of polycrystalline reduction Power Regulation power supply and its electric control system |
| CN108111026B (en) * | 2017-12-22 | 2020-09-18 | 南京因泰莱电器股份有限公司 | Implementation method of polycrystalline silicon power supply controller with self-starting function |
| CN110482554B (en) * | 2018-05-15 | 2021-03-26 | 新特能源股份有限公司 | High-pressure starting system and method for reduction furnace |
| CN110683547B (en) * | 2019-11-18 | 2023-12-26 | 新疆东方希望新能源有限公司 | 72-pair rod reduction furnace high-voltage breakdown system and method thereof |
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| CN1884068A (en) * | 2005-06-24 | 2006-12-27 | 刘雅銘 | Reducing furnace for producing polysilicon |
| CN201105993Y (en) * | 2007-10-23 | 2008-08-27 | 四川永祥多晶硅有限公司 | Polycrystalline silicon hydrogen reducing furnace suitable for low-voltage normal power supply hot start |
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