CN102281683A - LED anti-flash circuit - Google Patents
LED anti-flash circuit Download PDFInfo
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- CN102281683A CN102281683A CN2011102184805A CN201110218480A CN102281683A CN 102281683 A CN102281683 A CN 102281683A CN 2011102184805 A CN2011102184805 A CN 2011102184805A CN 201110218480 A CN201110218480 A CN 201110218480A CN 102281683 A CN102281683 A CN 102281683A
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Abstract
The invention relates to an LED anti-flash circuit which comprises an AC/DC module, a DC/DC module, a light-adjusting signal generation circuit, a first capacitor and a second capacitor; wherein the input end of the AC/DC module is connected with the external commercial power, two ends of the first capacitor are respectively connected with two output ends of the main power supply end of the AC/DC module, two ends of the second capacitor are respectively connected with two output ends of the auxiliary power supply end of the AC/DC module, two input ends of the light-adjusting signal generation circuit are respectively connected with two ends of the second capacitor, and the output end of the light-adjusting signal generation circuit is connected with the light-adjusting interface end of the DC/DC module, and the output end of the DC/DC module is connected with the LED load; the circuit is characterized by also comprising an enable circuit which is used for controlling the working mode of the DC/DC module and enforcedly shutting the power supply of the DC/DC module when the input power supply of the AC/DC module is switched off, the input end of the enable circuit is connected at two ends of the first capacitor, and the output end of the enable circuit is connected with the output end of the DC/DC module. Compared with the prior art, the circuit can thoroughly solve the flash phenomenon occurred when the LED power supply is switched off.
Description
Technical field
The present invention relates to a kind of LED anti-flicker circuit, particularly relate to a kind of adopt the first order be AC/DC module, the second level adopt the DC/DC module two-stage light modulation power supply as the LED driving power when the input power supply is closed, prevent the circuit of LED flicker.
Background technology
Existing LED light regulating technology mainly divides two classes from the signal generation principle of light modulation: the one, and the simulation light modulation, the 2nd, the PWM light modulation, the two all needs extra circuit module to go to realize, and this just needs the support of extra power supply circuits.The employing first order commonly used is that adopt in the two-stage light modulation power supply of DC/DC module AC/DC module, the second level, the front first order is the AC/DC module, be used to produce constant pressure source, this voltage source is as the supply power voltage of DC/DC module, partial DC/DC module is used for driving LED, makes it to be operated in constant current state.The power supply of dim signal generation circuit can directly hang on the constant pressure source of AC/DC module generation, mode by step-down is got, the power supply of the power supply of DC/DC module and dim signal generation circuit is synchronous like this, just do not have the scintillation of switching on and shutting down, but because the dividing potential drop of resistance is arranged, unloaded power consumption can be bigger like this.Another kind of scheme is to increase auxiliary power supply system in first order AC/DC module, dim signal generation circuit is powered by auxiliary power supply system, like this no-load power consumption can reach lower state (＜0.5W), but because the Capacity Ratio of the filter capacitor C1 of first order AC/DC module output is bigger, more than the big several times of capacity than the filter capacitor C2 of the electric power system of dim signal generation circuit, in case power remove (being that civil power is no longer powered to the AC/DC module) like this, the velocity of discharge of C1 is compared just slow with C2, when in little load and light modulation to the darkest the time, the LED lamp is because current ratio is less, brightness is just relatively darker, the voltage of output is also lower, this time, C2 discharged into 0, the signal of light modulation has not just had, the DC/DC module just returns to common mode of operation, upward voltage is still very high for C1 at this moment, and be higher than the minimum supply power voltage of DC/DC chip, LED is breakdown again so, be operated in normal condition, and brightness necessarily than light modulation to the darkest bright, though the time is very of short duration, when phenomenon is exactly shutoff, can glimmer, under perhaps several, that gives the people feels very uncomfortable.
Summary of the invention
Technical problem to be solved by this invention be at above-mentioned prior art provide a kind of adopt the first order be AC/DC module, the second level adopt the DC/DC module two-stage light modulation power supply as the LED driving power when the input power supply is closed, prevent the LED anti-flicker circuit of LED flicker.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: this LED anti-flicker circuit, comprise the AC/DC module, the DC/DC module, dim signal produces circuit, first electric capacity, second electric capacity, wherein the input of AC/DC module links to each other with external civil power, the two ends of first electric capacity link to each other with two outputs of the main feeder ear of AC/DC module respectively, the two ends of second electric capacity link to each other with two outputs of the auxiliary power supply end of AC/DC module respectively, two inputs that dim signal produces circuit link to each other with the two ends of second electric capacity respectively, the output that dim signal produces circuit links to each other with the dimming interface end of DC/DC module, the output of DC/DC module links to each other with the LED load, it is characterized in that: comprise that also one is used to control DC/DC module operating state, and the enable circuits that can positive closing DC/DC module when the input power remove of AC/DC module makes it no longer to work, the input of this enable circuits is connected the two ends of first electric capacity, and the output of this enable circuits links to each other with the input of DC/DC module.
Described enable circuits can have multiple structure, wherein a kind ofly be configured to preferably: described enable circuits comprises a P type field effect transistor, a metal-oxide-semiconductor drive circuit and first resistance, wherein, first end of first resistance links to each other with the source electrode of P type field effect transistor, second end of first resistance links to each other with the grid of P type field effect transistor, and Q1 provides bias voltage for P type field effect transistor; The input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of P type field effect transistor, the source electrode of P type field effect transistor links to each other with the positive pole of first electric capacity, and the drain electrode of P type field effect transistor links to each other with the power input of DC/DC module.
Described metal-oxide-semiconductor drive circuit comprises second resistance, the 3rd resistance, the 4th resistance and a N type field effect transistor, wherein first termination of second resistance links to each other with the grid of P type field effect transistor, second end of second resistance links to each other with the drain electrode of N type field effect transistor, first end of the 3rd resistance and the 4th resistance all links to each other with the grid of N type field effect transistor, the second end ground connection of the 3rd resistance, the input that second end of the 4th resistance is the metal-oxide-semiconductor drive circuit links to each other the source ground of N type field effect transistor with the cathode output end of the auxiliary power supply end of AC/DC module.
The principle of this scheme is: increase switching device between the supply power voltage VCC by the constant pressure source VIN that provides in the AC/DC of first order module and DC/DC module, C2 discharge into 0 or before with the power supply positive closing of DC/DC module.
Another is configured to preferably: described enable circuits comprises a N type field effect transistor, metal-oxide-semiconductor drive circuit, the 5th resistance and the 6th resistance, wherein the input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of N type field effect transistor, the drain electrode of N type field effect transistor links to each other with the positive pole of first electric capacity after connecting the 5th resistance, the source electrode of N type field effect transistor connects ground connection behind the 6th resistance, and the source electrode of N type field effect transistor also links to each other with the ON/OFF pin of DC/DC module; The power input of DC/DC module links to each other with the positive pole of first electric capacity.
Described metal-oxide-semiconductor drive circuit comprises the 7th resistance and the 8th circuit, wherein first end of the 7th resistance and the 8th resistance all links to each other with the grid of N type field effect transistor, the input that the second end ground connection of the 7th resistance, second end of the 8th resistance are the metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module.
The principle of this scheme is: the ON/OFF function that itself has by the DC/DC module, increase switching device, C2 discharge into 0 or before with the DC/DC decapacitation, it is no longer worked.
Compared with prior art, the invention has the advantages that:, thereby occur the phenomenon of flicker when can thoroughly solve the shutdown of LED power supply by the enable circuits that is provided for controlling DC/DC module operating state and can positive closing DC/DC modular power source when the input power remove of AC/DC module.
Description of drawings
Fig. 1 is the circuit theory diagrams of the embodiment of the invention one.
Fig. 2 is the circuit theory diagrams of the embodiment of the invention two.
Embodiment
Embodiment describes in further detail the present invention below in conjunction with accompanying drawing.
Embodiment one:
Referring to LED anti-flicker circuit shown in Figure 1, comprise the AC/DC module, the DC/DC module, dim signal produces circuit, first capacitor C 1, second capacitor C 2 and be used to control DC/DC module operating state, and enable circuits that can positive closing DC/DC modular power source when the input power remove of AC/DC module, wherein the input of AC/DC module links to each other with external civil power, the two ends of first capacitor C 1 respectively with two output VIN+ of the main feeder ear of AC/DC module/-link to each other, the two ends of second capacitor C 2 respectively with two output VCC1+ of the auxiliary power supply end of AC/DC module/-link to each other, two inputs that dim signal produces circuit link to each other with the two ends of second capacitor C 2 respectively, the output OUT that dim signal produces circuit links to each other with the dimming interface end DIM of DC/DC module, the output of DC/DC module links to each other with the LED load, the input of described enable circuits is connected the two ends of first capacitor C 1, and the output of described enable circuits links to each other with the input of DC/DC module.
Described enable circuits comprises a P type field effect transistor Q1 and a metal-oxide-semiconductor drive circuit, and first resistance R 1, wherein first end of first resistance R 1 links to each other with the source electrode of P type field effect transistor Q1, second end of first resistance R 1 links to each other with the grid of P type field effect transistor Q1, Q1 provides bias voltage for P type field effect transistor, the input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end VCC1+ of the auxiliary power supply end of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of P type field effect transistor, the source electrode of P type field effect transistor links to each other with the positive pole of first capacitor C 1, and the drain electrode of P type field effect transistor links to each other with the power input of DC/DC module.
Described metal-oxide-semiconductor drive circuit comprises second resistance R 2, the 3rd resistance R 3 and the 4th resistance R 4, N type field effect transistor Q2, wherein first end of second resistance R 2 links to each other with the grid of P type field effect transistor Q1, second end of second resistance R 2 links to each other with the drain electrode of N type field effect transistor Q2, first end of the 3rd resistance R 3 and the 4th resistance R 4 all links to each other with the grid of N type field effect transistor Q2, the second end ground connection of the 3rd resistance R 3, the input that second end of the 4th resistance R 4 is the metal-oxide-semiconductor drive circuit links to each other the direct ground connection of source electrode of N type field effect transistor Q2 with the cathode output end VCC1+ of the auxiliary power supply end of AC/DC module.
Because more than the big several times of Capacity Ratio second capacitor C 2 of first capacitor C 1, P type field effect transistor Q1 is connected between VIN and the VCC, and the voltage of VIN will be higher than VCC1, so energy stored (1/2CU on first capacitor C 1
2) to be far longer than energy stored on second capacitor C 2, in the time of operate as normal, N type field effect transistor Q2 conducting, because the direct ground connection of source electrode of Q2, the grid of P type field effect transistor Q1 is pulled to ground, because P type field effect transistor is the negative pressure conducting, so Q1 conducting in this time, and when mains switch turn-offs, first capacitor C 1, second capacitor C 2 begins discharge, the velocity of discharge of second capacitor C 2 will be faster than first capacitor C 1, when second capacitor C 2 discharges into to a certain degree, this degree is determined by the high level thresholding VOH of the dimming interface end DIM of DC/DC module, the high level voltage that is input to dimming interface end DIM pin when working at ordinary times will be higher than VOH, and between also have certain pressure reduction, when second capacitor C 2 discharges into VOH or a little more than VOH the time, just the level of the output drive of metal-oxide-semiconductor drive circuit should be drawn high, P type field effect transistor Q1 is ended, the input terminal voltage VCC of DC/DC module is cut off, even voltage is still far above VCCmin (the minimum cut-in voltage that the DC/DC module will be worked) on this time first capacitor C 1, but back level DC/DC circuit is no longer worked, when the voltage of the cut-off point of the main key point P type field effect transistor Q1 of this scheme and the dimming interface end DIM of DC/DC module drops to VOH synchronously, when both reach synchronous fully, just can thoroughly solve the phenomenon that the power remove lamp dodges.
Embodiment two:
Different with embodiment one is, described enable circuits comprises a N type field effect transistor Q3, the metal-oxide-semiconductor drive circuit, the 5th resistance R 5 and the 6th resistance R 6, wherein the input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end in the auxiliary power supply source of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of N type field effect transistor Q3, the drain electrode of N type field effect transistor Q3 connects the 5th resistance R 5 backs and links to each other with the positive pole of first electric capacity, the source electrode of N type field effect transistor Q3 connects the 6th resistance R 6 back ground connection, and the source electrode of N type field effect transistor also links to each other with the ON/OFF pin of DC/DC module; The power input of DC/DC module links to each other with the positive pole of first electric capacity.
Described metal-oxide-semiconductor drive circuit comprises the 7th resistance R 7 and the 8th resistance R 8, wherein first end of the 7th resistance R 7 and the 8th resistance R 8 all links to each other with the grid of N type field effect transistor Q3, the input that the second end ground connection of the 7th resistance R 7, second end of the 8th resistance R 8 are the metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module.
The same with embodiment one, more than the big several times of the Capacity Ratio C2 of first capacitor C 1, N type field effect transistor Q3 is used to control the ON/OFF pin of DC/DC module, the ON/OFF pin is pulled down to ground by the 6th resistance R 6 when N type field effect transistor Q3 ends, the DC/DC circuit is just by decapacitation, the technical essential of this scheme is the same with scheme 1, when the voltage of the cut-off point of N type field effect transistor Q3 and the dimming interface end DIM of DC/DC module drops to VOH synchronously, when both reach synchronous fully, just can thoroughly solve the phenomenon that the power remove lamp dodges.
Claims (5)
1. LED anti-flicker circuit, comprise the AC/DC module, the DC/DC module, dim signal produces circuit, first electric capacity, second electric capacity, wherein the input of AC/DC module links to each other with external civil power, the two ends of first electric capacity link to each other with two outputs of the main feeder ear of AC/DC module respectively, the two ends of second electric capacity link to each other with two outputs of the auxiliary power supply end of AC/DC module respectively, two inputs that dim signal produces circuit link to each other with the two ends of second electric capacity respectively, the output that dim signal produces circuit links to each other with the dimming interface end of DC/DC module, the output of DC/DC module links to each other with the LED load, it is characterized in that: comprise that also one is used to control DC/DC module operating state, and can positive closing DC/DC modular power source when the input power remove of AC/DC module make it no longer to work enable circuits, the input of this enable circuits is connected the two ends of first electric capacity, and the output of this enable circuits links to each other with the input of DC/DC module.
2. LED anti-flicker circuit according to claim 1, it is characterized in that: described enable circuits comprises a P type field effect transistor (Q1), a metal-oxide-semiconductor drive circuit and first resistance (R1), wherein, first end of first resistance (R1) links to each other with the source electrode of P type field effect transistor (Q1), and second end of first resistance (R1) links to each other with the grid of P type field effect transistor (Q1); The input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of P type field effect transistor, the source electrode of P type field effect transistor links to each other with the positive pole of first electric capacity, and the drain electrode of P type field effect transistor links to each other with the power input of DC/DC module.
3. LED anti-flicker circuit according to claim 2, it is characterized in that: described metal-oxide-semiconductor drive circuit comprises second resistance (R2), the 3rd resistance (R3), the 4th resistance (R4) and a N type field effect transistor (Q2), wherein first end of second resistance (R2) links to each other with the grid of P type field effect transistor (Q1), second end of second resistance (R2) links to each other with the drain electrode of N type field effect transistor (Q2), first end of the 3rd resistance (R3) and the 4th resistance (R4) all links to each other with the grid of N type field effect transistor (Q2), the second end ground connection of the 3rd resistance (R3), the input that second end of the 4th resistance (R4) is the metal-oxide-semiconductor drive circuit links to each other the source ground of N type field effect transistor (Q2) with the cathode output end of the auxiliary power supply end of AC/DC module.
4. LED anti-flicker circuit according to claim 1, it is characterized in that: described enable circuits comprises a N type field effect transistor (Q3), the metal-oxide-semiconductor drive circuit, the 5th resistance (R5) and the 6th resistance (R6), wherein the input of metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module, the output of metal-oxide-semiconductor drive circuit links to each other with the grid of N type field effect transistor (Q3), (R5) linked to each other with the positive pole of first electric capacity after the drain electrode of N type field effect transistor (Q3) connected the 5th resistance, the source electrode of N type field effect transistor (Q3) connects the 6th resistance (R6) back ground connection, and the source electrode of N type field effect transistor (Q3) also links to each other with the ON/OFF pin of DC/DC module; The power input of DC/DC module links to each other with the positive pole of first electric capacity.
5. LED anti-flicker circuit according to claim 4, it is characterized in that: described metal-oxide-semiconductor drive circuit comprises the 7th resistance (R7) and the 8th circuit (R8), wherein first end of the 7th resistance (R7) and the 8th resistance (R8) all links to each other with the grid of N type field effect transistor (Q3), the input that the second end ground connection of the 7th resistance (R7), second end of the 8th resistance (R8) are the metal-oxide-semiconductor drive circuit links to each other with the cathode output end of the auxiliary power supply end of AC/DC module.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110218480.5A CN102281683B (en) | 2011-07-28 | 2011-07-28 | LED anti-flash circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110218480.5A CN102281683B (en) | 2011-07-28 | 2011-07-28 | LED anti-flash circuit |
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| CN102281683A true CN102281683A (en) | 2011-12-14 |
| CN102281683B CN102281683B (en) | 2014-03-12 |
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| CN201110218480.5A Active CN102281683B (en) | 2011-07-28 | 2011-07-28 | LED anti-flash circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105376896A (en) * | 2014-08-18 | 2016-03-02 | 宁波高新区赛尔富电子有限公司 | Light modulation circuit and illumination system |
| CN107949113A (en) * | 2017-12-06 | 2018-04-20 | 北京小米移动软件有限公司 | LED light control circuit and LED light |
| CN109147704A (en) * | 2018-09-28 | 2019-01-04 | 合肥鑫晟光电科技有限公司 | Shift register cell, gate driving circuit, display device and driving method |
| CN109195254A (en) * | 2018-09-27 | 2019-01-11 | 厦门普为光电科技有限公司 | A kind of anti-flashing light protection system and method |
| CN115101006A (en) * | 2022-07-22 | 2022-09-23 | 绵阳惠科光电科技有限公司 | Light-emitting drive circuit and display device |
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| CN102013820A (en) * | 2010-10-22 | 2011-04-13 | 凹凸电子（武汉）有限公司 | AC-DC converter, method and controller |
| CN202145692U (en) * | 2011-07-28 | 2012-02-15 | 林万炯 | LED flicker filter circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2002319498A (en) * | 2001-02-13 | 2002-10-31 | Koito Mfg Co Ltd | Discharge lamp lighting circuit |
| CN201757323U (en) * | 2010-06-03 | 2011-03-09 | 深圳市亮百佳电子科技有限公司 | Flicker-free LED MR16 spotlight with dimming function |
| CN102013820A (en) * | 2010-10-22 | 2011-04-13 | 凹凸电子（武汉）有限公司 | AC-DC converter, method and controller |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105376896A (en) * | 2014-08-18 | 2016-03-02 | 宁波高新区赛尔富电子有限公司 | Light modulation circuit and illumination system |
| CN105376896B (en) * | 2014-08-18 | 2018-07-17 | 赛尔富电子有限公司 | A kind of light adjusting circuit and lighting system |
| CN107949113A (en) * | 2017-12-06 | 2018-04-20 | 北京小米移动软件有限公司 | LED light control circuit and LED light |
| CN109195254A (en) * | 2018-09-27 | 2019-01-11 | 厦门普为光电科技有限公司 | A kind of anti-flashing light protection system and method |
| CN109147704A (en) * | 2018-09-28 | 2019-01-04 | 合肥鑫晟光电科技有限公司 | Shift register cell, gate driving circuit, display device and driving method |
| CN115101006A (en) * | 2022-07-22 | 2022-09-23 | 绵阳惠科光电科技有限公司 | Light-emitting drive circuit and display device |
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| CN102281683B (en) | 2014-03-12 |
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Owner name: NINGBO HI. TECH. PARK SELF ELECTRONICS CO., LTD. Free format text: FORMER OWNER: LIN WANJIONG Effective date: 20141020 |
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Address after: The national high tech Zone Juxian 315103 Ningbo Road, Zhejiang province No. 1345 Patentee after: SELF ELECTRONICS CO., LTD. Address before: The national high tech Zone Juxian 315103 Ningbo Road, Zhejiang province No. 1345 Patentee before: SELF ELECTRONICS CO.,LTD. |