CN102277620A - High-efficient anti-radiation laser crystal and preparation method - Google Patents

High-efficient anti-radiation laser crystal and preparation method Download PDF

Info

Publication number
CN102277620A
CN102277620A CN2011102188435A CN201110218843A CN102277620A CN 102277620 A CN102277620 A CN 102277620A CN 2011102188435 A CN2011102188435 A CN 2011102188435A CN 201110218843 A CN201110218843 A CN 201110218843A CN 102277620 A CN102277620 A CN 102277620A
Authority
CN
China
Prior art keywords
gsgg
laser
crystal
radioprotective
efficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102188435A
Other languages
Chinese (zh)
Inventor
孙敦陆
张庆礼
罗建乔
刘文鹏
谷长江
秦清海
李为民
韩松
江海河
殷绍唐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hefei Institutes of Physical Science of CAS
Original Assignee
Hefei Institutes of Physical Science of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hefei Institutes of Physical Science of CAS filed Critical Hefei Institutes of Physical Science of CAS
Priority to CN2011102188435A priority Critical patent/CN102277620A/en
Publication of CN102277620A publication Critical patent/CN102277620A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention relates to a high-efficient anti-radiation Yb<3+>-sensitized Ho<3+>-doped gadolinium gallium scandium garnet laser crystal, belonging to the field of artificial crystal materials. The chemical expression formula of the crystal is Yb<3+>,Ho<3+>:Gd3Sc2Ga3O12 (which can be abbreviated as Yb,Ho:GSGG), Yb<3+> and Ho<3+> can replace Gd<3+> and Yb<3+> in the central position of an oxygen dodecahedron in the crystal and are used as sensitization ions for transferring absorbed pump light energy to the Ho<3+> ions, and the output of laser with wavelength in the vicinity of 2.9 mu m of a high-efficient LD (laser diode) pump can be realized through transition of the Ho<3+> ions from the <5>I6 energy level to the <5>I7 energy level. Laser in the waveband has important applications in the fields of biomedicine, optical parametric oscillation, electrooptical countermeasures and the like. As the Yb,Ho:GSGG laser crystal has the capability of resisting radiation of high-strength gamma rays and other rays, the laser crystal can not only meet the requirements of ground applications, but also meet the demands of applications in radiation environments and space environments.

Description

A kind of efficient radioprotective laser crystals and preparation method
Technical field
The invention belongs to the artificial crystal material field, a kind of specifically efficient radioprotective laser crystals and manufacture method.
Background technology
The laser apparatus of using in radiation environment and space environment can be subjected to the radiation of high energy particles such as gamma-rays and Millikan's rays, thereby require laser apparatus to have anti-energetic ray radiating ability, therefore efficient radioprotective laserable material has great importance for the development of radiation environment and space environment laser technology.
Gadolinium scandium gallium garnet crystal Gd 3Sc 2Ga 3O 12(GSGG) be the laser work matrix of excellent property, crystalline structure belongs to isometric system, can adopt the melt Czochralski grown to go out the monocrystalline of high optical quality.Zharikov (E.V.Zharikov, et al.Effect of UV-and γ-irradiation on the lasing characteristics of neodymium lasers, Bull.Acad.Sei.USSR, Phys.SHo., 1984,48:103) wait people's the Nd that experiment showed,, the Cr:GSGG laser apparatus is being subjected to ultraviolet ray or 10Mrad 60Behind the Co gamma-ray irradiation, its laser activity is influenced hardly, and Nd:YAG (Y 3Al 5O 12) laser apparatus is after being subjected to the gamma-ray irradiation of 1Mrad, its laser is exported the order of magnitude that descended.We 60The experiment of Co gamma-ray irradiation has also proved the good radiation resistance of GSGG matrix.Document (Y.N.Xu, et al.Electronic structure and bonding in garnet Gd 3Sc 2Ga 3O 12, Gd 3Sc 2Al 3O 12And Gd 3Ga 5O 12Compared to Y 3Al 5O 12Physical Review B, 2000,61:1817) GSGG crystal radioprotective Study on Mechanism is thought, the Sc atom that is arranged in octahedral oxygen ligand center is compared with the Al atom with the Ga of GGG, YAG crystal same position, have the higher covalency characteristics and the order of key, the ability that the opposing colour center is formed strengthens, and is the major cause that the GSGG crystal has strong capability of resistance to radiation.
Ho 3+Ionic 5I 7Extremely 5I 8The 2.0 μ m laser that energy level transition produces medically are being widely used, and Ho 3+Ionic 5I 6Extremely 5I 7Near the 2.9 μ m that energy level transition produces laser has important application prospects in fields such as medical treatment, scientific research and military affairs.But singly mixing Ho 3+Laserable material in because Ho 3+Efficient absorption band and photoflash lamp and at present full-fledged LD optical maser wavelength do not match, so pumping efficiency is lower.In order to improve pumping efficiency, usually adopt the method for mixing sensitizing agent, as being fit to use flash lamp pumping Cr, Tm co-doped with sensitized (D.A.Zubenko, Interionic interactions in YSGG:Cr:Tm and YSGG:Cr:Tm:Ho laser crystals, Sov.J.Quantum Electron., 1992,22:133) or Cr, Yb co-doped with sensitized (A.F.Umyskov, et al, Efficient 3-μ mCr 3+: Yb 3+: Ho 3+: YSGG crystal laser, Quan.Electron., 1996,26:711), adopt the Yb that is fit to diode-end-pumped 3+Ion sensitized (A.Dieninga, Spectroscopy and diode-pumped laser oscillation of Yb 3+, Ho 3+-doped yttrium scandium gallium garnet, J Applied Physics, 2000,87:4603), Yb wherein 3+The energy of ionic absorption is transferred to Ho 3+Ion is because Yb 3+Ion centre wavelength be 940nm, 970 and the 980nm wave band very strong absorption is arranged, therefore, use Yb 3+To Ho 3+Carry out effective sensitization, can improve pumping efficiency, simultaneously centre wavelength be 940nm, 970 and the LD laser apparatus of 980nm be full-fledged semiconductor laser, as pumping source, be Yb with it, Ho:GSGG realizes that higher-wattage laser exports the condition of having created.
Yb, Ho:GSGG crystal can adopt centre wavelength at 940nm, 970 and the semiconductor laser pumping of 980nm, can reduce the complexity of laser apparatus greatly, help device miniaturization, and this is very important for the application in radiation environment and space environment.Because matrix GSGG itself has radiation-resisting functional, so Yb, the Ho:GSGG crystal is a kind of efficient radiation-resistant laserable material, except that the requirement that can expire Ground Application, can also satisfy the needs that radiation environment and space environment are used.
In the seventies and eighties in last century, because Sc at that time 2O 3Raw material is very expensive, contains the research and development of scandium garnet crystalline thereby limited.In recent years, along with developing rapidly of application demand and extractive technique, Sc 2O 3Price reduction has by a relatively large margin been arranged.So, in the last few years, contained the research of scandium garnet crystalline abroad and rose again, however, according to the retrieval, at present both at home and abroad all also not about Yb, the research of Ho:GSGG laser crystals report.
Summary of the invention
Technology of the present invention is dealt with problems: overcome the deficiencies in the prior art, provide near a kind of radioprotective Yb that can realize efficient laser output 2.9 mu m wavebands, Ho:GSGG laser crystals and preparation method thereof.
Technical solution of the present invention: a kind of efficient radioprotective laser crystals, described crystalline chemical formula is Yb 3+, Ho 3+: Gd 3Sc 2Ga 3O 12, molecular formula is Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12, 0＜x＜1,0＜y＜1 wherein, Yb 3+As sensitized ions the pump energy that absorbs is transferred to Ho 3+Ion passes through Ho 3+Ionic 5I 6Extremely 5I 7Transition between the energy levels can be realized near the wavelength laser output of 2.9 μ m.
Described molecular formula Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12In, Yb 3+Ionic doping content scope is 5at%-20at%, i.e. 0.05＜x＜0.2; Ho 3+Ionic doping content scope is 0.5at%-5at%, i.e. 0.005＜y＜0.05, and wherein at% represents atomic percent.
Described laser crystals is a matrix with radioprotective crystal GSGG.
Described crystal use near the 25W of centre wavelength 940nm, 970nm or 980nm than the large-power semiconductor laser apparatus as pumping source.
The invention provides a kind of efficient radioprotective Yb 3+Sensitization Ho 3+(be called for short Yb, Ho:GSGG), this crystalline structure belongs to isometric system to ionic gadolinium scandium gallium garnet laser crystals, can adopt the melt Czochralski grown to go out the monocrystalline of high optical homogeneity.It is a kind of strong radiation resistance material that GSGG contains the scandium garnet crystal, is more suitable for using in space environment than YAG.Because Yb 3+Ion 940nm, 970 and 980nm very strong absorption is arranged, and that the high-power semiconductor laser of these wavelength has developed is comparatively ripe, therefore, uses Yb 3+To Ho 3+Carry out effective sensitization, the energy that absorbs is transferred to Ho 3+Ion can reach raising to pump light absorption efficiency, improves the purpose of output rating and realization laser structure compactness, miniaturization.Therefore, Yb, Ho:GSGG crystal are expected to become the efficient laser crystals that a kind of semiconductor laser pumping is fit to the space use.Use Yb, 2.9 mu m waveband lasers that the Ho:GSGG crystal produces have important application prospects in fields such as medical treatment, scientific research and military affairs.Except that the requirement that can expire Ground Application, can also satisfy the needs that radiation environment and space environment are used.
The preparation method of efficient radioprotective laser crystals of the present invention, adopt one of following method to realize:
1. solid phase method or liquid phase method prepare polycrystal raw material
According to following chemical equation:
3xYb 2O 3+ 3yHo 2O 3+ 3 (1-x-y) Gd 2O 3+ 2Sc 2O 3+ 3Ga 2O 3=2Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12, x=0.05-0.2 wherein, y=0.005-0.05 makes Yb, Ho:GSGG polycrystal raw material by solid reaction process or liquid phase method (coprecipitation method or sol-gel method);
2. melt method for growing monocrystalline
Use the Yb of above-mentioned solid phase method or liquid phase method preparation, the Ho:GSGG polycrystal raw material adopts melting method to prepare Yb, the Ho:GSGG monocrystalline.
The present invention's advantage compared with prior art is: the present invention is because Ho 3+Ionic doping content lower (0.5-5at%), thereby the modulation capacity of crystal field is stronger, can be by changing Ho in the crystal 3+The ionic doping content, the crystal of acquisition different peak emission wavelengths between 2.8-3 μ m is as 2.911 μ m.Yb of the present invention, Ho:GSGG crystal can adopt semiconductor laser to realize efficient pumping, and the light light conversion efficiency can reach more than 30%.
Embodiment
Embodiment 1: growth Yb 3+Concentration be 10at%, Ho 3+Concentration is the Gd of 1at% 2.67Yb 0.3Ho 0.03Sc 2Ga 3O 12Crystal
Yb, the Ho:GSGG crystal is meant Yb 3+Doping content between 5-20at%, Ho 3+The ionic doping content is between 0.5-5at%.Yb in the present embodiment 3+Concentration be 10at%, Ho 3+Concentration is 1at%, i.e. x=0.1, y=0.01.Oxide raw material is pressed chemical equation 3xYb 2O 3+ 3yHo 2O 3+ 3Gd 2O 3+ 3Sc 2O 3+ 2Ga 2O 3=2Gd 3 (1-x-y)Yb 3xHo 3ySc 2Ga 3O 12(wherein x=0.1 y=0.01) takes by weighing, and uniform mixing and briquetting use solid phase method 1300 ℃ of sintering 48 hours, can obtain Yb, the Ho:GSGG polycrystal raw material.600 gram Yb; the Ho:GSGG polycrystal raw material is packed in the iridium crucible of diameter 60mm; iridium crucible is put into the laser crystals lifting furnace; burner hearth charges into nitrogen as shielding gas after vacuumizing (1-5Pa); do the growth seed crystal with GSGG; the seed crystal rotating speed is 5-10 rev/min, and growth pulling rate 1-2mm/ hour uses induction heating that raw material is melted; raw material fusing back was after hot 12 hours; process is sowed, and shouldering is isometrical; carry crystalline substance; processes such as cooling obtain the Yb of electrical path length 80mm such as diameter 25mm, Ho:GSGG monocrystalline at last.
Embodiment 2: growth Yb 3+Concentration be 20at%, Ho 3+Concentration is the Gd of 0.5at% 2.385Yb 0.6Ho 0.015Sc 2Ga 3O 12Crystal
Yb, the Ho:GSGG crystal is meant Yb 3+Concentration between 5-20at%, Ho 3+The ionic doping content is between 0.5-5at%.Yb in the present embodiment 3+Concentration be 20at%, Ho 3+Concentration is 0.5at%, i.e. x=0.2, y=0.005.Oxide raw material is pressed chemical equation 3xYb 2O 3+ 3yHo 2O 3+ 3Gd 2O 3+ 3Sc 2O 3+ 2Ga 2O 3=2Gd 3 (1-x-y)Yb 3xHo 3ySc 2Ga 3O 12(wherein x=0.2 y=0.005) takes by weighing, and the oxide compound that takes by weighing is used HNO respectively 3Dissolving back uniform mixing, method with liquid phase coprecipitation is total to titration with mixing solutions and ammoniacal liquor, keep pH value about 12, mixed solution after co-precipitation, with the centrifugal gel precursor that obtains of whizzer, through washing, oven dry, can obtain Yb in 12 hours at 1000 ℃ of sintering at last, the Ho:GSGG polycrystal raw material.600 gram Yb; the Ho:GSGG polycrystal raw material is packed in the iridium crucible of diameter 60mm; iridium crucible is put into the laser crystals lifting furnace; burner hearth charges into nitrogen as shielding gas after vacuumizing (1-5Pa); do the growth seed crystal with GSGG; the seed crystal rotating speed is 5-10 rev/min, and growth pulling rate 1-2mm/ hour uses induction heating that raw material is melted; raw material fusing back was after hot 12 hours; process is sowed, and shouldering is isometrical; carry crystalline substance; processes such as cooling obtain the Yb of electrical path length 80mm such as diameter 25mm, Ho:GSGG monocrystalline at last.
Embodiment 3: growth Yb 3+Concentration be 8at%, Ho 3+Concentration is the Gd of 2at% 2.7Yb 0.24Ho 0.06Sc 2Ga 3O 12Crystal
Yb, the Ho:GSGG crystal is meant Yb 3+Concentration between 5-20at%, Ho 3+The ionic doping content is between 0.5-5at%.Yb in the present embodiment 3+Concentration be 8at%, Ho 3+Concentration is 2at%, i.e. x=0.08, y=0.02.Prepare polycrystal raw material with sol-gel method, oxide raw material is pressed chemical equation 3xYb 2O 3+ 3yHo 2O 3+ 3Gd 2O 3+ 3Sc 2O 3+ 2Ga 2O 3=2Gd 3 (1-x-y)Yb 3xHo 3ySc 2Ga 3O 12(wherein x=0.08 y=0.02) takes by weighing, wherein Ga 2O 3Alkoxide with Ga substitutes, and other oxide compound that takes by weighing is used HNO respectively 3The dissolving back is uniformly mixed into colloidal sol with the alkoxide solution of Ga, leaves standstill to become gel in 24 hours, and drying can obtain Yb in 12 hours at 1000 ℃ of sintering, the Ho:GSGG polycrystal raw material at last.600 gram Yb; the Ho:GSGG polycrystal raw material is packed in the iridium crucible of diameter 60mm; iridium crucible is put into the laser crystals lifting furnace; burner hearth charges into nitrogen as shielding gas after vacuumizing (1-5Pa); do the growth seed crystal with GSGG; the seed crystal rotating speed is 5-10 rev/min, and growth pulling rate 1-2mm/ hour uses induction heating that raw material is melted; raw material fusing back was after hot 12 hours; process is sowed, and shouldering is isometrical; carry crystalline substance; processes such as cooling obtain the Yb of electrical path length 80mm such as diameter 25mm, Ho:GSGG monocrystalline at last.

Claims (5)

1. efficient radioprotective laser crystals, it is characterized in that: described crystalline chemical formula is: Yb 3+, Ho 3+: Gd 3Sc 2Ga 3O 12, molecular formula is Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12, 0＜x＜1,0＜y＜1 wherein.
2. according to claims 1 described efficient radioprotective laser crystals, it is characterized in that: described molecular formula Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12In, Yb 3+Ionic doping content scope is 5at%-20at%, i.e. 0.05＜x＜0.2; Ho 3+Ionic doping content scope is 0.5at%-5at%, i.e. 0.005＜y＜0.05, and wherein at% represents atomic percent.
3. according to claims 1 described efficient radioprotective laser crystals, it is characterized in that: described laser crystals is a matrix with radioprotective crystal GSGG.
4. according to claims 1 described efficient radioprotective laser crystals, it is characterized in that: described crystal use near the 25W of centre wavelength 940nm, 970nm or 980nm than the large-power semiconductor laser apparatus as pumping source.
5. according to the preparation method of the described efficient radioprotective laser crystals of claim 1, it is characterized in that adopting one of following method to realize:
1. solid phase method or liquid phase method prepare polycrystal raw material
According to following chemical equation:
3xYb 2O 3+ 3yHo 2O 3+ 3 (1-x-y) Gd 2O 3+ 2Sc 2O 3+ 3Ga 2O 3=2Yb 3xHo 3yGd 3 (1-x-y)Sc 2Ga 3O 12, x=0.05-0.2 wherein, y=0.005-0.05 makes Yb by solid reaction process or liquid phase method, the Ho:GSGG polycrystal raw material;
2. melt method for growing monocrystalline
Use the Yb of above-mentioned solid phase method or liquid phase method preparation, the Ho:GSGG polycrystal raw material adopts melting method to prepare Yb, the Ho:GSGG monocrystalline.
CN2011102188435A 2011-08-02 2011-08-02 High-efficient anti-radiation laser crystal and preparation method Pending CN102277620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011102188435A CN102277620A (en) 2011-08-02 2011-08-02 High-efficient anti-radiation laser crystal and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011102188435A CN102277620A (en) 2011-08-02 2011-08-02 High-efficient anti-radiation laser crystal and preparation method

Publications (1)

Publication Number Publication Date
CN102277620A true CN102277620A (en) 2011-12-14

Family

ID=45103342

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102188435A Pending CN102277620A (en) 2011-08-02 2011-08-02 High-efficient anti-radiation laser crystal and preparation method

Country Status (1)

Country Link
CN (1) CN102277620A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560663A (en) * 2012-02-13 2012-07-11 中国科学院合肥物质科学研究院 2.8-3 micrometers laser crystal and its preparation method
CN103820858A (en) * 2014-02-28 2014-05-28 中国科学院福建物质结构研究所 Er- or Ho-activated ABC3O7 type intermediate infrared ultrafast laser crystal
CN105154975A (en) * 2015-09-11 2015-12-16 中国科学院合肥物质科学研究院 Near-1.33-mu-mu-wavelength thermally-bonded composite laser crystal and preparation method thereof
CN110607559A (en) * 2019-09-30 2019-12-24 安徽工业大学 Efficient near-infrared anti-irradiation laser crystal and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101063228A (en) * 2007-05-10 2007-10-31 中国科学院安徽光学精密机械研究所 Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+
US7421166B1 (en) * 2006-08-04 2008-09-02 The United States Of America As Represented By The United States Department Of Energy Laser spark distribution and ignition system
CN101476156A (en) * 2008-12-30 2009-07-08 中国科学院安徽光学精密机械研究所 Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method
CN102127812A (en) * 2010-12-27 2011-07-20 中国科学院安徽光学精密机械研究所 High-efficiency radiation-resistant intermediate infrared laser crystal Re, Er: GSGG and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7421166B1 (en) * 2006-08-04 2008-09-02 The United States Of America As Represented By The United States Department Of Energy Laser spark distribution and ignition system
CN101063228A (en) * 2007-05-10 2007-10-31 中国科学院安徽光学精密机械研究所 Garnet laser crystal containing scandium of high efficiency antiradiation Yb3+ sensitizing Er3+
CN101476156A (en) * 2008-12-30 2009-07-08 中国科学院安徽光学精密机械研究所 Gadolinium, yttrium, scandium and gallium doped garnet, gadolinium-yttrium-scandium-gallium-aluminum garnet and crystal growth method by melt method
CN102127812A (en) * 2010-12-27 2011-07-20 中国科学院安徽光学精密机械研究所 High-efficiency radiation-resistant intermediate infrared laser crystal Re, Er: GSGG and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A. DIENING ET AL: "Spectroscopy and diode-pumped laser oscillation of Yb3+, Ho3+-doped yttrium scandium gallium garnet", 《JOURNAL OF APPLIED PHYSICS》, vol. 87, no. 9, 1 May 2000 (2000-05-01), XP012049858, DOI: doi:10.1063/1.373031 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560663A (en) * 2012-02-13 2012-07-11 中国科学院合肥物质科学研究院 2.8-3 micrometers laser crystal and its preparation method
CN102560663B (en) * 2012-02-13 2015-04-15 中国科学院合肥物质科学研究院 2.8-3 micrometers laser crystal and its preparation method
CN103820858A (en) * 2014-02-28 2014-05-28 中国科学院福建物质结构研究所 Er- or Ho-activated ABC3O7 type intermediate infrared ultrafast laser crystal
CN105154975A (en) * 2015-09-11 2015-12-16 中国科学院合肥物质科学研究院 Near-1.33-mu-mu-wavelength thermally-bonded composite laser crystal and preparation method thereof
CN110607559A (en) * 2019-09-30 2019-12-24 安徽工业大学 Efficient near-infrared anti-irradiation laser crystal and preparation method thereof

Similar Documents

Publication Publication Date Title
CN100540755C (en) Efficient radioprotective Yb 3+Sensitization Er 3+Contain scandium garnet laser crystals and preparation method thereof
CN110607559A (en) Efficient near-infrared anti-irradiation laser crystal and preparation method thereof
CN103397385B (en) Mix ytterbium lutetium GGG laser crystal and preparation method thereof and application
CN101409424B (en) Nd, er: GSGG and preparation method of Nd, er: GSGG anti-radiation laser crystal sensitized by Nd3+ion
CN102277620A (en) High-efficient anti-radiation laser crystal and preparation method
CN110408994A (en) One kind mixing spectrum scandium acid gadolinium visible waveband laser crystal and preparation method thereof
CN103614776B (en) Wavelength laser crystal and preparation method thereof near a kind of 2.9 microns
CN102618928B (en) High-efficiency mid-infrared laser crystal and preparation method thereof
CN110468452B (en) Intermediate infrared thulium-holmium co-doped sesquioxide laser single crystal fiber and preparation method and application thereof
CN103924297A (en) Holmium, ytterbium, praseodymium-doped lithium lutetium fluoride intermediate infrared laser crystal and preparation method
CN114108072B (en) Rare earth ion doped GdScO3Laser crystal preparation and application thereof
CN101037804A (en) Yttrium erbium ion gadolinium sodium molybdate double-doped laser crystal and preparation method and usage thereof
CN103696007B (en) Nd, Er:GSAG laser crystal and its preparing method
CN109023523B (en) Lead fluoride laser crystal doped with erbium and dysprosium in infrared light in 2.7-3 micron wave band and preparation method thereof
CN102127812A (en) High-efficiency radiation-resistant intermediate infrared laser crystal Re, Er: GSGG and preparation method thereof
CN109112633B (en) Efficient intermediate infrared laser crystal Er, Pr and YSAG, preparation method thereof and method for realizing intermediate infrared laser output
CN105350083A (en) Tellurium bismuth borate compound, tellurium bismuth borate nonlinear optical crystal, tellurium bismuth borate scintillation crystal, and preparation method and application thereof
CN101319396A (en) Yb-doped yttrium lithium tungstate of femtosecond pulse laser crystal and preparation method thereof
CN103696008B (en) Yb, Er:GSAG laser crystal and its preparation method
CN102936751A (en) Neodymium-doped sodium lutetium molybdate laser crystal and preparation method thereof
CN100368603C (en) Neodymium doped lithium lanthanum tungstate lacer crystla and its prepn
CN101676448B (en) Erbium-doped yttrium barium lithium molybdate laser crystal and preparation method and application thereof
CN105887200A (en) Thulium-holmium-codoped strontium lanthanum gallate laser crystal, preparation method and application of crystal
CN102560663B (en) 2.8-3 micrometers laser crystal and its preparation method
CN111509553B (en) Ytterbium-doped rare earth tantalate femtosecond laser crystal and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20111214