CN102276148B - Preparation method of insulating dielectric slurry for stainless steel thick film - Google Patents
Preparation method of insulating dielectric slurry for stainless steel thick film Download PDFInfo
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- CN102276148B CN102276148B CN 201110139028 CN201110139028A CN102276148B CN 102276148 B CN102276148 B CN 102276148B CN 201110139028 CN201110139028 CN 201110139028 CN 201110139028 A CN201110139028 A CN 201110139028A CN 102276148 B CN102276148 B CN 102276148B
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Abstract
The invention discloses a preparation method of insulating dielectric slurry for a stainless steel thick film, which comprises the steps of: (1) mixing raw materials by respective chemical measuring ratio in a chemical formula according to the chemical formula of the insulating dielectric slurry to be prepared to obtain a mixture; (2) melting the mixture at the temperature of 1300 DEG C to 1500 DEG C and the temperature preservation time of 20 to 60 minutes to obtain melted glass; (3) quenching the melted glass and then ball-milling to obtain glass powder; and (4) mixing the glass powder and a dielectric carrier in the proportion by weight of (1:0.6) to (1:1) and ball-milling to obtain the insulating dielectric slurry. The insulating dielectric slurry for the stainless steel substrate, prepared by the invention, has higher breakdown resistant voltage, good insulating performance and flat surface, and conforms to the requirement of manufacturing an insulating dielectric layer.
Description
Technical field
The invention belongs to the technology of preparing of dielectric slurry, specifically a kind of preparation method of stainless steel insulating thick film dielectric paste, the method uses glass powder to obtain a kind of water base dielectric slurry that can spray on stainless-steel sheet, and this slurry can be applied to the bottom insulation paste of stainless steel substrate automobile air-conditioning fan speed regulation resistance and the base pastes of stainless steel substrate heating board device (as the hot-plate of automobile with warmer).
Background information
What traditional thick-film resistor material adopted is ceramic substrate, and the ceramic substrate that uses at present comprises Al
2O
3, AlN, the materials such as SiC.But its application that ceramic substrate has had a lot of drawbacks limit.Such as, the heat conductivility of ceramic substrate is general.Fragility is large in addition, is easy to fracture in the process of cutting, is difficult to carry out mechanical workout.Along with the miniaturization of product, variation, traditional ceramic substrate resistance can not satisfy the growing market requirement.
The stainless material substrate is that thermal conductivity or machinability are all better than ceramic substrate.Therefore increasing thick-film electronic product begins to select stainless material as substrate, and thick-film resistor is no exception.Although on mechanical property, stainless steel substrate has very large advantage.But the stainless material conduction is therefore in order to prepare thick film resistance element, the medium layer that must at first insulate at stainless steel substrate surface formation one deck.This one deck medium layer also will be difficult for breaking except insulating property are good.
In numerous materials, microcrystalline glass powder slurry good insulation preformance, mechanical strength is high, the medium layer any surface finish of preparation.But present devitrified glass dielectric slurry on the market is applicable to print process mostly, is not suitable for stainless material is carried out whole coating.
Present devitrified glass dielectric slurry is mainly with the organism material, such as the carrier as slurry such as Terpineol 350 in addition.Not only the high also contaminate environment of price is unfavorable for that operator's is healthy.Therefore the devitrified glass dielectric slurry of inventing new more economical environmental protection has urgent necessity.
Summary of the invention
For defective or the deficiency that prior art exists, the object of the present invention is to provide a kind of preparation method of stainless steel insulating thick film dielectric paste, utilize the prepared dielectric slurry of the method to spray on stainless-steel sheet, production cost is low.
The preparation method of a kind of stainless steel insulating thick film dielectric paste provided by the invention, its step comprises:
(1) according to the chemical formula of dielectric slurry to be prepared, raw material is mixed by the stoichiometric ratio in chemical formula separately, obtain mixture;
(2) mixture is carried out melting, temperature is 1300～1500 ℃, and soaking time is 20～60 minutes, obtains the glass of melting;
(3) ball milling after the glass quenching of melting is obtained glass powder;
(4) be the ratio mixing and ball milling of 1: 0.6～1: 1 in mass ratio with above-mentioned glass powder and medium carrier, obtain the dielectric slurry.
The stainless steel substrate of the present invention's preparation has higher breakdown voltage resistant, good insulating property, surfacing with the dielectric slurry.Meet the requirement of making insulating medium layer.
Embodiment
Below by by embodiment, the present invention being described in further detail, but following examples are only illustrative, and protection scope of the present invention is not subjected to the restriction of these embodiment.
The below is with the analytical pure silicon oxide, aluminum oxide, and boron oxide, calcium oxide, sodium oxide and potassium oxide are by formula (mass percent)
XSiO
2+ yAl
2O
3+ zB
2O
3+ 2%CaO+4%Na
2O+4%K
2O, wherein, 50%≤x≤70%, 5%≤y≤17%, 10%≤z≤16% is illustrated example as the raw material of dielectric slurry to be prepared.
Example 1:
In this example, xSiO
2+ yAl
2O
3+ zB
2O
3+ 2%CaO+4%Na
2O+4%K
2O, x=50% wherein, y=15%, z=12% takes SiO2, Al in proportion
2O
3, H
3BO
3, CaCO
3, Na
2CO
3, K
2CO
3, ball mill mixing, oven dry is sieved, the crucible of then mixed powder being packed into.Melting: to 1500 ℃ of insulations 30 minutes, be poured into water quenching.The glass powder that obtains after shrend and concentration are that 95% industrial spirit is 1: 1 ratio ball milling according to mass ratio, obtain the dielectric slurry.Resistance is greater than 500M Ω after tested, and insulating property are good.
Example 2-4:
The silicon oxide of example 2-4, aluminum oxide, boron oxide, calcium oxide, the formula of sodium oxide and potassium oxide (mass percent) and processing parameter as shown in Table 1, its preparation process such as example 1.
Resistance is greater than 480M Ω after tested for the prepared product of example 2, and insulating property are good.
Resistance is greater than 460M Ω after tested for the prepared product of example 3, and insulating property are good.
The prepared product of example 4 after tested resistance greater than 450M Ω.
Table one
The above is preferred embodiment of the present invention, but the present invention should not be confined to the disclosed content of this embodiment and accompanying drawing.So everyly do not break away from the equivalence of completing under spirit disclosed in this invention or revise, all falling into the scope of protection of the invention.
Claims (1)
1. the preparation method of a stainless steel insulating thick film dielectric paste, its step comprises:
(1) according to the chemical formula of dielectric slurry to be prepared, raw material is mixed by the stoichiometric ratio in chemical formula separately, obtain mixture; Described dielectric slurry to be prepared is: xSiO
2+ yAl
2O
3+ zB
2O
3+ 2%CaO+4%Na
2O+4%K
2O, wherein, x=60%, y=17%, z=10%, above each material all adopts mass percent;
(2) mixture is carried out melting, temperature is 1300 ℃, and soaking time is 60 minutes, obtains the glass of melting;
(3) ball milling after the glass quenching of melting is obtained glass powder;
(4) be the ratio mixing and ball milling of 1:0.8 in mass ratio with above-mentioned glass powder and industrial spirit, obtain described dielectric slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110139028 CN102276148B (en) | 2011-05-26 | 2011-05-26 | Preparation method of insulating dielectric slurry for stainless steel thick film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110139028 CN102276148B (en) | 2011-05-26 | 2011-05-26 | Preparation method of insulating dielectric slurry for stainless steel thick film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102276148A CN102276148A (en) | 2011-12-14 |
| CN102276148B true CN102276148B (en) | 2013-05-22 |
Family
ID=45101946
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110139028 Active CN102276148B (en) | 2011-05-26 | 2011-05-26 | Preparation method of insulating dielectric slurry for stainless steel thick film |
Country Status (1)
| Country | Link |
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| CN (1) | CN102276148B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805129A (en) * | 2010-04-14 | 2010-08-18 | 东莞市龙基电子有限公司 | Insulating layer material for stainless steel plates and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7176152B2 (en) * | 2004-06-09 | 2007-02-13 | Ferro Corporation | Lead-free and cadmium-free conductive copper thick film pastes |
| CN101805125B (en) * | 2010-03-11 | 2011-12-07 | 西安创联宏晟电子有限公司 | Insulating glass medium slurry for 430 stainless steel and preparation method thereof |
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2011
- 2011-05-26 CN CN 201110139028 patent/CN102276148B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101805129A (en) * | 2010-04-14 | 2010-08-18 | 东莞市龙基电子有限公司 | Insulating layer material for stainless steel plates and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102276148A (en) | 2011-12-14 |
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Owner name: KAITE DIANZI YUNMENG CO., LTD. Free format text: FORMER OWNER: YUNMENG DIPU INDUSTRIAL CO.,LTD. Effective date: 20140129 |
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Effective date of registration: 20140129 Address after: 432500 No. 40, ring road, Chengguan County, Hubei, Yunmeng Patentee after: KAITE ELECTRONIC YUNMENG CO., LTD. Address before: 432500, No. 38, South Ring Road, Xiaogan Economic Development Zone, Hubei Patentee before: Yunmeng Dipu Industrial Co.,Ltd. |