CN102267697B - Process for producing solar grade polysilicon with sodium circulation method - Google Patents
Process for producing solar grade polysilicon with sodium circulation method Download PDFInfo
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- CN102267697B CN102267697B CN2010101980973A CN201010198097A CN102267697B CN 102267697 B CN102267697 B CN 102267697B CN 2010101980973 A CN2010101980973 A CN 2010101980973A CN 201010198097 A CN201010198097 A CN 201010198097A CN 102267697 B CN102267697 B CN 102267697B
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- fluoride naf
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Abstract
The invention relates to a process for producing solar grade polysilicon with a sodium circulation method. The process comprises the following steps: heating sodium fluosilicate Na2SiF6 to decompose to a silicon tetrafluoride (SiF4) gas and sodium fluoride NaF; vaporizing metallic sodium Na to a sodium (Na) steam at a high temperature; allowing the silicon tetrafluoride (SiF4) gas and the sodium (Na) steam to enter a reaction furnace to generate high purity silicon powder, allowing the high purity silicon powder to enter a first collector, and carrying out high temperature fusion to prepare finished products of polysilicon; allowing other mixed gases to enter a second collector, allowing sodium fluoride NaF to deposit with unreacted sodium Na, and carrying out heating separation on sodium fluoride NaF and sodium Na; allowing the other gases to enter a third collector, cooling, collecting the residual silicon tetrafluoride (SiF4) gas, adding water to dissolve into a solution of fluosilicic acid (H2SiF6); and carrying out spray processing on residual substances. The process for producing solar grade polysilicon with the sodium circulation method, which has the advantages of simple production technology, no discharge of toxic gases, wide source and cheapness of raw materials, and accordance of the concept of Chinese circular economy, allows generated byproducts to be effectively utilized, the production cost to be substantially saved, and the development of the solar photovoltaic industry to be effectively promoted.
Description
Technical field
The present invention relates to a kind of processing method of producing polysilicon, especially a kind of sodium circulation method is produced the processing method of solar-grade polysilicon.
Background technology
Because sun power has fast development and the newly increased requirement of impayable environmental protection, low-carbon (LC), the advantage such as inexhaustible and photovoltaic industry, the current upsurge that has formed in the world developing low-cost, low consumption sun power and polysilicon, emerge the new technology of many special production solar-grade polysilicons, the normal polysilicon reduction method that adopts has Siemens Method, silane thermal decomposition process, vulcanization bed method etc. at present, but, existing polysilicon reduction method cost is high, energy consumption is large, seriously polluted, increased production cost and environmental pollution.
Summary of the invention
The problem that exists in order to solve existing polysilicon reduction method, the present invention proposes a kind of sodium circulation method and produce the processing method of solar-grade polysilicon, this kind processing method adopts the chemical physics conversion method, production technique is simple, discharge without toxic gas, and the byproduct that produces effectively can be utilized, greatly saved production cost and energy consumption, effectively promoted the development of photovoltaic industry.
The technical solution adopted for the present invention to solve the technical problems is: the processing method that this a kind of sodium circulation method is produced solar-grade polysilicon is: with Sodium Silicofluoride Na
2SiF
6Put into reactor, with 300 ℃-800 ℃ temperature thermal degradation 1-5 hour, generate silicon tetrafluoride SiF
4Gas and byproduct Sodium Fluoride NaF sell after Sodium Fluoride NaF cooling becomes solid; High purity metal sodium Na in reactor, is increased temperature 800 ℃-1000 ℃ and is vaporized into sodium Na steam; Make simultaneously silicon tetrafluoride SiF
4Gas and high purity sodium Na steam enter Reaktionsofen by 1: 4 reaction formula weight than along pipeline, generate the high purity silica flour; The high purity silica flour enters the first collector, and the control temperature becomes piece with Powdered high purity silicon Si high-temperature fusion between 1000 ℃-1600 ℃, make the polysilicon finished product; Other mixed gas enters the second collector, at 800 ℃-100 ℃, makes Sodium Fluoride NaF and unreacted sodium Na deposition by the control temperature, and with Sodium Fluoride NaF and sodium Na heating and separating, sodium Na recycles again, and Sodium Fluoride NaF sells as byproduct; Other mixed gas enters the 3rd collector, cools to 10 ℃ of-0 ℃ of coolings, collects remaining silicon tetrafluoride SiF
4Gas is dissolved in water into silicofluoric acid H
2SiF
6Solution is sold; Remaining material spray is processed.
The invention has the beneficial effects as follows: the processing method production technique that this a kind of sodium circulation method is produced solar-grade polysilicon is simple, discharge without toxic gas, raw material sources are extensively cheap, the concept that meets national recycling economy, and the byproduct that produces effectively can be utilized, greatly save production cost, effectively promoted the development of photovoltaic industry.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Accompanying drawing 1 is that this a kind of sodium circulation method is produced the process flow sheet of the processing method of solar-grade polysilicon.
Embodiment
In accompanying drawing 1, the processing method that this a kind of sodium circulation method is produced solar-grade polysilicon is: with Sodium Silicofluoride Na
2SiF
6Put into reactor, with 300 ℃-800 ℃ temperature thermal degradation 1-5 hour, generate silicon tetrafluoride SiF
4Gas and byproduct Sodium Fluoride NaF can sell after Sodium Fluoride NaF cooling becomes solid; High purity metal sodium Na in reactor, is increased temperature 800 ℃-1000 ℃ and is vaporized into sodium Na steam; Make simultaneously silicon tetrafluoride SiF
4Gas and high purity sodium Na steam enter Reaktionsofen by 1: 4 reaction formula weight than along pipeline, generate the high purity silica flour; The high purity silica flour enters the first collector, and the control temperature becomes piece with Powdered high purity silicon Si high-temperature fusion between 1000 ℃-1600 ℃, make the polysilicon finished product; Other mixed gas enters the second collector, at 800 ℃-100 ℃, makes Sodium Fluoride NaF and unreacted sodium Na deposition by the control temperature, and with Sodium Fluoride NaF and sodium Na heating and separating, sodium Na recycles again, and Sodium Fluoride NaF sells as byproduct; Other mixed gas enters the 3rd collector, cools to 10 ℃ of-0 ℃ of coolings, collects remaining silicon tetrafluoride SiF
4Gas is dissolved in water into silicofluoric acid H
2SiF
6Solution is sold; Remaining material spray is processed.
Impurity concentration<the 0.02ppm (7N) of the silica flour that generates.
Fluoride for Raw Material water glass Na
2SiF
6, be the byproduct in the phosphate fertilizer making processes, the source is cheap and extensive; The byproduct Sodium Fluoride NaF that produces in the anti-process is the industrial chemicals of high-quality, is used for Aluminium industry and toothpaste production, silicofluoric acid H
2SiF
6Solution can be used for Metal plating, wood preservation, has disinfectant properties, can make the sterilizing agent in the brewage.
Claims (2)
1. the processing method that the sodium circulation method is produced solar-grade polysilicon is characterized in that: with Sodium Silicofluoride Na
2SiF
6Put into reactor, with 300 ℃-800 ℃ temperature thermal degradation 1-5 hour, generate silicon tetrafluoride SiF
4Gas and byproduct Sodium Fluoride NaF sell after Sodium Fluoride NaF cooling becomes solid; High purity metal sodium Na in reactor, is increased temperature 800 ℃-1000 ℃ and is vaporized into sodium Na steam; Make simultaneously silicon tetrafluoride SiF
4Gas and high purity sodium Na steam enter Reaktionsofen by 1: 4 reaction formula weight than along pipeline, generate the high purity silica flour; The high purity silica flour enters the first collector, and the control temperature becomes piece with Powdered high purity silicon Si high-temperature fusion between 1000 ℃-1600 ℃, make the polysilicon finished product; Other mixed gas enters the second collector, at 800 ℃-100 ℃, makes Sodium Fluoride NaF and unreacted sodium Na deposition by the control temperature, and with Sodium Fluoride NaF and sodium Na heating and separating, Sodium Fluoride NaF sells as byproduct again; Other mixed gas enters the 3rd collector, cools to 10 ℃ of-0 ℃ of coolings, collects remaining silicon tetrafluoride SiF
4Gas is dissolved in water into silicofluoric acid H
2SiF
6Solution is sold; Remaining material spray is processed.
2. the described a kind of sodium circulation method processing method of producing solar-grade polysilicon according to claim 1, it is characterized in that: sodium Na recycles.
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CN2010101980973A CN102267697B (en) | 2010-06-04 | 2010-06-04 | Process for producing solar grade polysilicon with sodium circulation method |
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CN2010101980973A CN102267697B (en) | 2010-06-04 | 2010-06-04 | Process for producing solar grade polysilicon with sodium circulation method |
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CN102267697A CN102267697A (en) | 2011-12-07 |
CN102267697B true CN102267697B (en) | 2013-01-02 |
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CN2010101980973A Expired - Fee Related CN102267697B (en) | 2010-06-04 | 2010-06-04 | Process for producing solar grade polysilicon with sodium circulation method |
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Families Citing this family (2)
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CN103288088B (en) * | 2012-02-23 | 2016-02-17 | 苏州宝时得电动工具有限公司 | A kind of preparation method of polysilicon |
CN103395785B (en) * | 2013-07-18 | 2014-12-31 | 贵州省产品质量监督检验院 | Method for preparing polycrystalline silicon by reducing sodium fluosilicate with sodium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4446120A (en) * | 1982-01-29 | 1984-05-01 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing silicon from sodium fluosilicate |
CN101134562A (en) * | 2006-09-01 | 2008-03-05 | 多氟多化工股份有限公司 | Method for producing hydrofluoric acid |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2009129458A2 (en) * | 2008-04-17 | 2009-10-22 | Circulon Hungary Ltd. | Silicon production process |
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2010
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4446120A (en) * | 1982-01-29 | 1984-05-01 | The United States Of America As Represented By The United States Department Of Energy | Method of preparing silicon from sodium fluosilicate |
CN101134562A (en) * | 2006-09-01 | 2008-03-05 | 多氟多化工股份有限公司 | Method for producing hydrofluoric acid |
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