CN102266775A - Photo-catalytic material based on zinc oxide nanometer linear array modified with cuprous oxide quantum dots, and preparation method and application thereof - Google Patents

Photo-catalytic material based on zinc oxide nanometer linear array modified with cuprous oxide quantum dots, and preparation method and application thereof Download PDF

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CN102266775A
CN102266775A CN2011101530919A CN201110153091A CN102266775A CN 102266775 A CN102266775 A CN 102266775A CN 2011101530919 A CN2011101530919 A CN 2011101530919A CN 201110153091 A CN201110153091 A CN 201110153091A CN 102266775 A CN102266775 A CN 102266775A
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zinc oxide
electrode
quantum dot
wire array
cuprous oxide
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CN102266775B (en
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佘广为
王耀
师文生
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Technical Institute of Physics and Chemistry of CAS
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Abstract

The invention belongs to the technical field of nanometer material application, and specifically relates to a photo-catalytic material based on a zinc oxide nanometer linear array modified with cuprous oxide quantum dots, and a preparation method and application thereof. According to the invention, the zinc oxide nanometer linear array which firmly grows on a conductive substrate is used as a working electrode, a platinum electrode is used as a counter electrode, a saturated calomel electrode is used as a reference electrode, and the dimethyl sulfoxide solution of copper nitrate is used as electrolyte; and an electrochemical cyclic voltammetry method is performed to obtain the photo-catalytic material based on the zinc oxide nanometer linear array modified with the cuprous oxide quantum dots. The photo-catalytic material of the invention is placed in the water solution to be treated; zinc oxide and cuprous copper produce photoelectrons and holes respectively under the irradiation of sunlight; and the photoelectrons and holes can react with dissolved oxygen and hydroxyl ions in water respectively to generate derivatives with strong oxidizability for killing bacteria.

Description

Zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot and its production and application
Technical field
The invention belongs to technical field of nano material application, particularly zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot and its production and application.
Background technology
In recent years, nano zinc oxide material has caused concern (Yang, An et al.2004 widely in light catalytic purifying water body application; Peng, Wang et al.2006; Akhavan, Mehrabian et al.2009; Mosnier, O ' Haire et al.2009).Yet as a kind of wide bandgap semiconductor materials, zinc oxide only limits to the ultraviolet portion of solar spectrum to the absorption of sunshine, and this has limited its utilization ratio to sunshine greatly.Simultaneously, the exciton complex effect of zinc oxide also is to reduce a key factor of its photocatalysis efficiency.In order to address these problems, zinc oxide normal with other semi-conducting material composition heterojunction structure as photochemical catalyst (Wang, Zhao et al.2002; Hernandez, Maya et al.2007; Nayak, Sahu et al.2008).
Cuprous oxide has good sunshine absorbent properties and photocatalysis performance (Hu, Nian et al.2008 as a kind of narrow bandgap semiconductor material; Kakuta and Abe 2009; Ma, Li et al.2010).And the band structure of cuprous oxide cooperates with zinc oxide can promote carrier separation, and then improves photocatalysis efficiency (Jiang, Xie et al.2010).In view of the unique advantage of zinc oxide/cuprous oxide heterojunction structure, the mixture of powders of zinc oxide/cuprous oxide is in the news and is used for the photocatalytic applications field, and has obtained effect (Helaili, Bessekhouad et al.2010 preferably; Xu, Cao et al.2010).Yet powder photocatalyst is difficult to reclaim and can not be used for the flowing water system, and this has limited its application.Simultaneously, zinc oxide/cuprous oxide heterojunction structure photocatalysis theory shows (Helaili, Bessekhouad et al.2010; Xu, Cao et al.2010), promote light-catalysed effect in order to reach hetero-junctions, not only to allow cuprous oxide and staying water that sufficient contact area is arranged, also to guarantee zinc oxide and extraneous contacting simultaneously.Therefore, the nucleocapsid structure of the complete coating zinc oxide of some cuprous oxide (Hsueh, Hsu et al.2007; Kuo, Wang et al.2009) will not be suitable for photocatalytic applications.
Summary of the invention
The objective of the invention is to overcome the deficiency of existing zinc oxide/cuprous oxide photochemical catalyst, a kind of zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of with low cost and environmental protection is provided.
A further object of the present invention provides a kind of simple and convenient preparation method of the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot.
An also purpose of the present invention provides the application of the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot.
Zinc oxide nano-wire array in the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of the present invention firmly grows in the substrate, is convenient to recycle and reuse; Simultaneously, the cuprous oxide quantum dot evenly distributes on zinc oxide nanowire, has not only guaranteed contacting of cuprous oxide quantum dot and staying water, also enough contacts area is provided for the zinc oxide and the external world at the quantum dot distribution gap.
The zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of the present invention, be that ordering growth has zinc oxide nanowire on conductive substrates, and the zinc oxide nanowire of ordering growth is the array-like structure, in the finishing of zinc oxide nanowire the cuprous oxide quantum dot is arranged.
The diameter of described zinc oxide nanowire is 60~200nm, and length is 1~3 μ m; Described cuprous oxide quantum dot is of a size of 5~20nm.
Described conductive substrates is ITO electro-conductive glass or FTO electro-conductive glass.
The preparation method of the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of the present invention is at zinc oxide nanowire surface deposition cuprous oxide quantum dot: compound concentration is that dimethyl sulfoxide (DMSO) (DMSO) solution of the copper nitrate of 5~15mM is as electrolyte, with platinum electrode as to electrode, as reference electrode, the conductive substrates of zinc oxide nano-wire array is arranged as working electrode with saturated calomel electrode with growth; In temperature is under 55~75 ℃, with electrochemical cyclic voltammetry working electrode is applied voltage range and be-0.2V scan round voltage (the preferred cycle number of times is 50~100 times), promptly obtain the zinc oxide nano-wire array catalysis material of cuprous oxide quantum dot modification to-0.6V (with respect to saturated calomel electrode).
Described zinc oxide nano-wire array is prepared by following method: compound concentration is that the zinc acetate aqueous solution of 0.05~1mM is as electrolyte, with platinum electrode as to electrode, with saturated calomel electrode as reference electrode, with conductive substrates as working electrode; In temperature is under 75~95 ℃, blasts oxygen in above-mentioned zinc acetate aqueous solution, to described working electrode apply-0.8~-voltage (time that preferably applies voltage is 1~3 hour) of 1.1V, obtain the zinc oxide nano-wire array of ordering growth on conductive substrates.
The diameter of described zinc oxide nanowire is 60~200nm, and length is 1~3 μ m.
Described cuprous oxide quantum dot is of a size of 5~20nm.
Described conductive substrates is ITO electro-conductive glass or FTO electro-conductive glass.
Catalysis material of the present invention is placed the pending aqueous solution, under irradiation of sunlight, zinc oxide and cuprous oxide will produce light induced electron and hole separately, light induced electron and hole can be reacted with oxygen in water and hydroxide ion respectively, generation has the derivative than strong oxidizing property, and bacterium is had strong killing action.Therefore, catalysis material of the present invention under irradiation of sunlight to the killing effect preferably that has of the bacterium in the aqueous solution.Because zinc oxide nano-wire array firmly grows in the substrate, be convenient to reclaim, but recycled for multiple times.Catalysis material of the present invention has characteristics such as environmental protection, cost are low, high efficiency, easily recovery, reusable edible, is specially adapted to contain the purified treatment of the water body of bacterium.
The preparation method and the application thereof of catalysis material involved in the present invention have:
1) reaction condition gentleness, reaction temperature are no more than 85 ℃;
2) preparation technology is simple, cost is low;
3) prepared catalysis material good physical performance has that specific area is big, quantum dot is evenly distributed, is connected firmly with substrate, characteristics such as reusable edible;
4) be applied to photocatalysis and kill bacterium in the water body, show high reaction activity and high under simulated solar irradiation, do not compare with the zinc oxide nano-wire array material of modifying through the cuprous oxide quantum dot, the photo-catalyst effect obviously improves.
Description of drawings
Fig. 1 is the structural representation of catalysis material of the present invention.
Fig. 2 is the zinc oxide nano-wire array SEM picture of the embodiment of the invention 1 preparation.
Fig. 3 is the zinc oxide nano-wire array TEM picture of the embodiment of the invention 1 preparation.
Fig. 4 is the zinc oxide nano-wire array SEM picture that the cuprous oxide quantum dot of the embodiment of the invention 1 preparation is modified.
Fig. 5 is the zinc oxide nano-wire array TEM picture that the cuprous oxide quantum dot of the embodiment of the invention 1 preparation is modified.
Fig. 6 is the zinc oxide nano-wire array HRTEM picture that the cuprous oxide quantum dot of the embodiment of the invention 1 preparation is modified.
Fig. 7 is the zinc oxide nano-wire array XPS picture that the cuprous oxide quantum dot of the embodiment of the invention 1 preparation is modified.
Reference numeral
1.ITO electro-conductive glass substrate or the substrate of FTO electro-conductive glass
2. zinc oxide nano-wire array 3. cuprous oxide quantum dots
The specific embodiment
The present invention is described in detail below in conjunction with specific embodiment, but be not to concrete restriction of the present invention.
As shown in Figure 1, the agent structure of the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of the present invention is by substrate of ITO electro-conductive glass or FTO electro-conductive glass substrate 1, zinc oxide nano-wire array 2, the cuprous oxide quantum dot 3 that is evenly distributed on the zinc oxide nanowire surface constitutes.
Embodiment 1.
1) preparation of zinc oxide nano-wire array: compound concentration be the zinc acetate aqueous solution of 0.05mM as electrolyte, with platinum electrode as to electrode, with saturated calomel electrode as reference electrode, with the ITO electro-conductive glass as working electrode; In temperature is under 75 ℃, blasts oxygen in above-mentioned zinc acetate aqueous solution, and described working electrode is applied-voltage of 0.8V 1 hour, obtains the zinc oxide nano-wire array of ordering growth on the ITO electro-conductive glass; Pattern to sample carries out SEM, TEM sign respectively, and the gained result is respectively as Fig. 2, shown in Figure 3.
2) at zinc oxide nanowire surface deposition cuprous oxide quantum dot: compound concentration is that the dimethyl sulphoxide solution of copper nitrate of 5mM is as electrolyte, with platinum electrode as to electrode, as reference electrode, the growth that obtains with step 1) has the ITO electro-conductive glass of zinc oxide nano-wire array as working electrode with saturated calomel electrode; In temperature is under 55 ℃, with electrochemical cyclic voltammetry working electrode is applied voltage range and be-0.2V scan round voltage to-0.6V (with respect to saturated calomel electrode), cycle-index is 50 times, obtains the zinc oxide nano-wire array catalysis material that the cuprous oxide quantum dot is modified.Pattern to sample carries out SEM, TEM sign respectively, and the gained result is respectively as Fig. 4, shown in Figure 5.Structures of samples and composition are carried out HRTEM and XPS sign, and gained result such as Fig. 6, shown in Figure 7 prove the zinc oxide nanowire that prepared product is modified for the cuprous oxide quantum dot really.
The diameter of described zinc oxide nanowire is about 60nm, and length is about 1 μ m; Described cuprous oxide quantum dot is of a size of 5~10nm.
Prepared catalysis material is used for handling the physiological saline that contains Escherichia coli (E.coli K-12).Experiment condition is: normal temperature and pressure, pending bacterial concentration are 10 8Cfu/ml, bacteria liquid is long-pending to be 4ml, the photochemical catalyst area is 1cm 2, light source is the AM1.5 simulated solar irradiation.Every interval certain hour sampling dilution 10 6Doubly, the bacterium drop that diluted was cultivated 14 hours on the LB culture medium and at 37 ℃.By the clump count on the LB culture medium is added up, infer the concentration of bacterium liquid, and then calculate the bacteria living rate of different time.Gained bacteria living rate is as shown in table 1 with the corresponding result of action time.
Table 1
Action time 0min 10min 30min 60min
The bacteria living rate 100% 40.6% 0.7% 0%
Embodiment 2.
1) preparation of zinc oxide nano-wire array: compound concentration be the zinc acetate aqueous solution of 0.5mM as electrolyte, with platinum electrode as to electrode, with saturated calomel electrode as reference electrode, with the FTO electro-conductive glass as working electrode; In temperature is under 85 ℃, blasts oxygen in above-mentioned zinc acetate aqueous solution, and described working electrode is applied-voltage of 1V 2 hours, obtains the zinc oxide nano-wire array of ordering growth on the FTO electro-conductive glass.
2) at zinc oxide nanowire surface deposition cuprous oxide quantum dot: compound concentration is that the dimethyl sulphoxide solution of copper nitrate of 10mM is as electrolyte, with platinum electrode as to electrode, as reference electrode, the growth that obtains with step 1) has the FTO electro-conductive glass of zinc oxide nano-wire array as working electrode with saturated calomel electrode; In temperature is under 60 ℃, with electrochemical cyclic voltammetry working electrode is applied voltage range and be-0.2V scan round voltage to-0.6V (with respect to saturated calomel electrode), cycle-index is 80 times, obtains the zinc oxide nano-wire array catalysis material that the cuprous oxide quantum dot is modified.
The diameter of described zinc oxide nanowire is about 100nm, and length is about 2 μ m; Described cuprous oxide quantum dot is of a size of 10~15nm.
Prepared catalysis material is used for handling the physiological saline that contains Escherichia coli (E.coli K-12).Experiment condition is: normal temperature and pressure, pending bacterial concentration are 10 8Cfu/ml, bacteria liquid is long-pending to be 4ml, the photochemical catalyst area is 1cm 2, light source is the AM1.5 simulated solar irradiation.Every interval certain hour sampling dilution 10 6Doubly, the bacterium drop that diluted was cultivated 14 hours on the LB culture medium and at 37 ℃.By the clump count on the LB culture medium is added up, infer the concentration of bacterium liquid, and then calculate the bacteria living rate of different time.Gained bacteria living rate is as shown in table 2 with the corresponding result of action time.
Table 2
Action time 0min 10min 30min 60min
The bacteria living rate 100% 36.9% 0.7% 0%
Embodiment 3.
1) preparation of zinc oxide nano-wire array: compound concentration be the zinc acetate aqueous solution of 1mM as electrolyte, with platinum electrode as to electrode, with saturated calomel electrode as reference electrode, with the ITO electro-conductive glass as working electrode; In temperature is under 95 ℃, blasts oxygen in above-mentioned zinc acetate aqueous solution, and described working electrode is applied-voltage of 1.1V 3 hours, obtains the zinc oxide nano-wire array of ordering growth on the ITO electro-conductive glass.
2) at zinc oxide nanowire surface deposition cuprous oxide quantum dot: compound concentration is that the dimethyl sulphoxide solution of copper nitrate of 15mM is as electrolyte, with platinum electrode as to electrode, as reference electrode, the growth that obtains with step 1) has the ITO electro-conductive glass of zinc oxide nano-wire array as working electrode with saturated calomel electrode; In temperature is under 75 ℃, with electrochemical cyclic voltammetry working electrode is applied voltage range and be-0.2V scan round voltage to-0.6V (with respect to saturated calomel electrode), cycle-index is 100 times, obtains the zinc oxide nano-wire array catalysis material that the cuprous oxide quantum dot is modified.
The diameter of described zinc oxide nanowire is about 200nm, and length is about 3 μ m; Described cuprous oxide quantum dot is of a size of 15~20nm.
Prepared catalysis material is used for handling the physiological saline that contains Escherichia coli (E.coli K-12).Experiment condition is: normal temperature and pressure, pending bacterial concentration are 10 8Cfu/ml, bacteria liquid is long-pending to be 4ml, the photochemical catalyst area is 1cm 2, light source is the AM1.5 simulated solar irradiation.Every interval certain hour sampling dilution 10 6Doubly, the bacterium drop that diluted was cultivated 14 hours on the LB culture medium and at 37 ℃.By the clump count on the LB culture medium is added up, infer the concentration of bacterium liquid, and then calculate the bacteria living rate of different time.Gained bacteria living rate is as shown in table 3 with the corresponding result of action time.
Table 3
Action time 0min 10min 30min 60min
The bacteria living rate 100% 34.1% 0% 0%

Claims (10)

1. zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot, it is characterized in that: described catalysis material is that ordering growth has zinc oxide nanowire on conductive substrates, and the zinc oxide nanowire of ordering growth is the array-like structure, in the finishing of zinc oxide nanowire the cuprous oxide quantum dot is arranged.
2. the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot according to claim 1, it is characterized in that: the diameter of described zinc oxide nanowire is 60~200nm, length is 1~3 μ m; Described cuprous oxide quantum dot is of a size of 5~20nm.
3. the zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot according to claim 1, it is characterized in that: described conductive substrates is ITO electro-conductive glass or FTO electro-conductive glass.
4. preparation method according to any described zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of claim 1~3, it is characterized in that: compound concentration is that the dimethyl sulphoxide solution of copper nitrate of 5~15mM is as electrolyte, with platinum electrode as to electrode, as reference electrode, the conductive substrates of zinc oxide nano-wire array is arranged as working electrode with saturated calomel electrode with growth; In temperature is under 55~75 ℃, with electrochemical cyclic voltammetry working electrode is applied voltage range for the-0.2V scan round voltage to-0.6V, obtains the zinc oxide nano-wire array catalysis material that the cuprous oxide quantum dot is modified.
5. method according to claim 4, it is characterized in that: described zinc oxide nano-wire array is prepared by following method: compound concentration is that the zinc acetate aqueous solution of 0.05~1mM is as electrolyte, with platinum electrode as to electrode, with saturated calomel electrode as reference electrode, with conductive substrates as working electrode; In temperature is under 75~95 ℃, blasts oxygen in above-mentioned zinc acetate aqueous solution, to described working electrode apply-0.8~-voltage of 1.1V, obtain the zinc oxide nano-wire array of ordering growth on conductive substrates.
6. method according to claim 4 is characterized in that: described working electrode is applied voltage range is 50~100 times for-0.2V to the cycle-index of the scan round voltage of-0.6V.
7. method according to claim 4 is characterized in that: described cuprous oxide quantum dot is of a size of 5~20nm.
8. according to claim 4 or 5 described methods, it is characterized in that: the diameter of described zinc oxide nanowire is 60~200nm, and length is 1~3 μ m.
9. method according to claim 5 is characterized in that: described to working electrode apply-0.8~-time of the voltage of 1.1V is 1~3 hour.
10. application according to any described zinc oxide nano-wire array catalysis material of modifying based on the cuprous oxide quantum dot of claim 1~3, it is characterized in that: described catalysis material is killed the bacterium in the aqueous solution under irradiation of sunlight.
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CN107993923A (en) * 2017-12-08 2018-05-04 青岛大学 A kind of controllable quantum dots array preparation method based on photo-thermal effect
CN109988551A (en) * 2018-01-03 2019-07-09 中国科学院理化技术研究所 A kind of electrochromic material and its preparation method and application
CN110354859A (en) * 2019-06-28 2019-10-22 黄山学院 A kind of preparation method and applications of cuprous oxide-zinc oxide composite
WO2020258659A1 (en) * 2019-06-27 2020-12-30 深圳市华星光电半导体显示技术有限公司 Quantum dot light-emitting diode device and preparation method therefor

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103325663A (en) * 2012-03-23 2013-09-25 北京邮电大学 Preparation method of composite nanofiltration heterostructure capable of generating quantum dots on side wall of nanowire
CN103325663B (en) * 2012-03-23 2016-03-16 北京邮电大学 The preparation method of heterostructure is received in the compound of nanowire sidewalls growth quantum point
CN107993923A (en) * 2017-12-08 2018-05-04 青岛大学 A kind of controllable quantum dots array preparation method based on photo-thermal effect
CN107993923B (en) * 2017-12-08 2020-02-21 青岛大学 Preparation method of controllable quantum dot array based on photothermal effect
CN109988551A (en) * 2018-01-03 2019-07-09 中国科学院理化技术研究所 A kind of electrochromic material and its preparation method and application
CN109988551B (en) * 2018-01-03 2022-07-01 中国科学院理化技术研究所 Electrochromic material and preparation method and application thereof
WO2020258659A1 (en) * 2019-06-27 2020-12-30 深圳市华星光电半导体显示技术有限公司 Quantum dot light-emitting diode device and preparation method therefor
CN110354859A (en) * 2019-06-28 2019-10-22 黄山学院 A kind of preparation method and applications of cuprous oxide-zinc oxide composite

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