CN102262855B - Active driving OLED (Organic Light Emitting Diode) device - Google Patents

Active driving OLED (Organic Light Emitting Diode) device Download PDF

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CN102262855B
CN102262855B CN201110222360.2A CN201110222360A CN102262855B CN 102262855 B CN102262855 B CN 102262855B CN 201110222360 A CN201110222360 A CN 201110222360A CN 102262855 B CN102262855 B CN 102262855B
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signal electrode
electric current
oled
tft
active driving
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CN102262855A (en
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陈钢
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Nanjing CEC Panda LCD Technology Co Ltd
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Nanjing CEC Panda LCD Technology Co Ltd
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Abstract

The invention discloses an active driving OLED (Organic Light Emitting Diode) device which is characterized in that a passive matrix driving circuit is connected with an anode of an active driving OLED (Organic Light Emitting Diode) luminous material. The passive matrix driving circuit is arranged at a driving part of an AM-OLED (Active Matrix Organic Light Emitting Diode) so as to compensate driving currents entering an AM-OLED (Active Matrix Organic Light Emitting Diode) device and enable the AM-OLED (Active Matrix Organic Light Emitting Diode) based on amorphous silicon driving can be applied to the OLED (Organic Light Emitting Diode) device with a larger size and a higher resolution; and a good yield is obtained.

Description

Active driving OLED device
Technical field
The present invention relates to show and lighting field, relate in particular to a kind of active driving OLED (ORGANIC ELECTROLUMINESCENCE DISPLAYS) device.
Background technology
AM (active driving) OLED is display technique of future generation, in demonstration and the characteristics of luminescence, has high-level efficiency, more many than having advantages of with TFT-LCD on display quality, is the emphasis of studying in the industry at present.
The type of drive of OLED device is current drives, and brightness is directly proportional to the magnitude of current, because TFT long term device is operated in meeting generating device characteristic deviation under DC voltage bias state, and then electric current decline, cause brightness to reduce.Also have in addition voltage delay effect, when grid voltage is respectively from small to large when changing from big to small, in the various process of identical voltage bias state in rising and declining, the electric current by device is also unequal.Therefore the object driving in order to reach fixed current, in order to compensate, the characteristic of TFT is inconsistent or RGB element characteristic is inconsistent, and each pixel at least needs two or more TFT and a storage capacitors to form.
It is in Liquid crystal production technique that amorphous silicon technology is the most successfully applied, current LCD producer, and except minority is used LTPS (low temperature polycrystalline silicon) technology, what the overwhelming majority was used is a-Si (amorphous silicon) technology.Adopt a-Si technology to carry out the production of AM OLED, equipment can be used the existing equipment of current liquid crystal TFT processing completely, and initial stage input cost is low.
OLED device is current driving apparatus, and the electron mobility of a-Si device is less than 1cm2/V-s, and lower carrier mobility means that the electric current that TFT can provide may be insufficient, and the difficulty of a-Si device on large scale, high-resolution AM OLED is larger.
The direction of exploitation is to use LTPS as the driving of AM OLED now, but complex process, yield can not guarantee.
Summary of the invention
Goal of the invention: for the problem and shortage of above-mentioned existing existence, the object of this invention is to provide a kind of active driving OLED device that abundant electric current can be provided.
Technical scheme: for achieving the above object, the technical solution used in the present invention is a kind of active driving OLED device, and passive-matrix driving circuit connects the anode of active driving OLED luminescent material.
Described passive-matrix driving circuit can be the signal electrode that connects pixel electrode.
The material of described anode can be metal oxide or the metal that indium tin oxide (ITO) etc. has the stability of high work function, good electric conductivity, good chemistry and form.
The output voltage of described passive-matrix driving circuit can be less than the threshold voltage of active driving OLED luminescent material.
Beneficial effect: the present invention is at AM OLED device drive partial design passive-matrix driving circuit, with compensation, enter the drive current in AM OLED device, make the AM OLED driving based on amorphous silicon can be applied to more large scale and more high-resolution OLED device, and obtain good yield.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of single pixel in the active driving OLED of increase passive-matrix driving circuit;
Fig. 2 is the sequential relationship schematic diagram of circuit part voltage and current shown in Fig. 1;
Fig. 3 is the overall schematic of a plurality of pixels in the active driving OLED of increase passive-matrix driving circuit.
Embodiment
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention, should understand these embodiment is only not used in and limits the scope of the invention for the present invention is described, after having read the present invention, those skilled in the art all fall within the application's claims limited range to the modification of the various equivalent form of values of the present invention.
As shown in Figure 1, this main circuit will comprise 2 row switch electrode SELECT and V dRIVER, 1 drive TFT (T4), 2 switching TFT (T1, T2), 1 storage capacitance C and 1 OLED luminescence unit.Grid and the drain electrode of thin film transistor (TFT) T3 link together, thereby make T3 have the character of diode; And first signal electrode I dATAwith secondary signal electrode I pM.In 5 road exposure procedure for producing, first signal electrode I dATAgenerally, the 3rd layer of exposure film forming, material is the metals such as AL, Ti, Cu, is main signal electrode, secondary signal electrode wires I pMin layer 5 exposure film forming, identical with pixel electrode material, material is generally metal oxide or the metals such as ITO, Ag, by each pixel electrode, connect out, directly electric current is provided on the sub-pixel of panel, active driving circuit part of the present invention is only example, I pMthe circuit structure of the multiple active driving OLED of having announced at present of can arranging in pairs or groups, feature of the present invention is newly to have added passive-matrix driving circuit I pM.
As shown in Figure 2, when row selection signal (SELECT) is high level, T1 and T2 conducting, now, driving power (VDRIVER) is low level, T3 cut-off, first signal electrode (I dATA) electric current storage capacitance C is charged through T2, secondary signal electrode (I pM) now close, there is no electric current process.Along with the progressively rising of storage capacitance C voltage, T4 grid voltage raises, and finally makes the electric current that flows through T4 equal first signal electrode I dATAelectric current, the voltage on storage capacitance C remains unchanged.Afterwards, row selection signal becomes low level, T1, T2 cut-off, and the charging and discharging circuit of storage capacitance C is cut off, and the voltage on C will remain unchanged.Because C is in parallel with grid and the source electrode of T4, T4 has the ability of saturation conduction electric current.When supply voltage reverts to high level, T4 conducting, current flowing intensity equals first signal electrode I dATAelectric current, secondary signal electrode (I pM) synchronously open, common driving OLED luminescence unit is luminous, and the electric current of the OLED device of flowing through is by first signal electrode I dATAelectric current and secondary signal electrode I pMelectric current co-controlling, I dATAby TFT switch, enter OLED device, I pMdirectly electric current is added on OLED device.
Fig. 3 shows the whole line situation of a plurality of pixels in active driving OLED, and passive-matrix driving circuit is the I in Fig. 1 pM.

Claims (4)

1. an active driving OLED device, it is characterized in that: in active driving OLED, single image element circuit comprises 2 row switch electrodes and driving power, 1 drive TFT, 2 switching TFT (T1, T2), 1 storage capacitance, 1 OLED luminescence unit, the thin film transistor (TFT) that grid and drain electrode link together, first signal electrode, and secondary signal electrode, passive-matrix driving circuit connects the anode of active driving OLED luminescent material, when row selection signal is high level, 2 switching TFT conductings, driving power is low level, thin film transistor (TFT) cut-off, the electric current of first signal electrode charges to storage capacitance through the switching TFT of one of them, secondary signal electrode is now closed, there is no electric current process, along with the progressively rising of storage capacitance voltage, the grid voltage of drive TFT raises, and the electric current that finally makes to flow through drive TFT equals the electric current of first signal electrode, and the voltage in storage capacitance remains unchanged, when row selection signal becomes low level, 2 switch cut-offs, the charging and discharging circuit of storage capacitance is cut off, and the voltage in storage capacitance will remain unchanged, when supply voltage reverts to high level, thin film transistor (TFT) conducting, current flowing intensity equals the electric current of first signal electrode, secondary signal electrode is synchronously opened, common driving OLED luminescence unit is luminous, flow through the electric current of OLED device by the electric current of first signal electrode and the electric current co-controlling of secondary signal electrode, and the electric current of first signal electrode enters OLED device by switching TFT, and secondary signal electrode is directly added in electric current on OLED device.
2. active driving OLED device according to claim 1, is characterized in that: described passive-matrix driving circuit is for connecting the signal electrode of pixel electrode.
3. according to active driving OLED device described in claim 1 or 2, it is characterized in that: the material of described anode is metal oxide or metal.
4. active driving OLED device according to claim 1, is characterized in that: the output voltage of described passive-matrix driving circuit is less than the threshold voltage of active driving OLED luminescent material.
CN201110222360.2A 2011-08-04 2011-08-04 Active driving OLED (Organic Light Emitting Diode) device Active CN102262855B (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1440014A (en) * 2002-02-21 2003-09-03 友达光电股份有限公司 Driving circuit in display screen
CN1510650A (en) * 2002-12-20 2004-07-07 铼宝科技股份有限公司 Passive driving method for organic light emitting diodes
CN1525425A (en) * 2003-02-25 2004-09-01 卡西欧计算机株式会社 Display apparatus and driving method for display apparatus
CN101556764A (en) * 2009-05-18 2009-10-14 友达光电股份有限公司 Method for driving passive matrix organic light emitting diode display device
CN101582237A (en) * 2008-05-16 2009-11-18 群康科技(深圳)有限公司 Pixel structure and organic light-emitting diode display

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1788301A (en) * 2003-05-13 2006-06-14 东芝松下显示技术有限公司 Active matrix display device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1440014A (en) * 2002-02-21 2003-09-03 友达光电股份有限公司 Driving circuit in display screen
CN1510650A (en) * 2002-12-20 2004-07-07 铼宝科技股份有限公司 Passive driving method for organic light emitting diodes
CN1525425A (en) * 2003-02-25 2004-09-01 卡西欧计算机株式会社 Display apparatus and driving method for display apparatus
CN101582237A (en) * 2008-05-16 2009-11-18 群康科技(深圳)有限公司 Pixel structure and organic light-emitting diode display
CN101556764A (en) * 2009-05-18 2009-10-14 友达光电股份有限公司 Method for driving passive matrix organic light emitting diode display device

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