CN102255505A - APD (avalanche photo diode) voltage control circuit and method - Google Patents
APD (avalanche photo diode) voltage control circuit and method Download PDFInfo
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- CN102255505A CN102255505A CN2011102157916A CN201110215791A CN102255505A CN 102255505 A CN102255505 A CN 102255505A CN 2011102157916 A CN2011102157916 A CN 2011102157916A CN 201110215791 A CN201110215791 A CN 201110215791A CN 102255505 A CN102255505 A CN 102255505A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
Abstract
The invention discloses an APD (avalanche photo diode) voltage control circuit, comprising a micro-control circuit and a boosted circuit, wherein the micro-control circuit is used for controlling the boosted circuit and the voltage to build up in accordance with feedback signals, thus the boosted circuit can build up the voltage in accordance with the requirement, thereby finally reaching the working voltage of the APD; the boosted circuit comprises a boosted chip and a voltage-multiplying circuit; the boosted chip receives control signals from the micro-control circuit and the feedback signals from the boosted circuit and works under the control of the micro-control circuit; the voltage-multiplying circuit is used for multiplying an output voltage of the boosted chip; and a turn-off pin of the boosted chip is pulled down and grounded by a resistor. The invention discloses a corresponding control method. By using a power-up protection mode in the technical scheme, the damages of surging currents for an optical module receiving end APD and a system power supply circuit can be reduced in the process of powering up an optical module.
Description
Technical field
The present invention relates to the SFP optical module of optical communication field, especially a kind of APD voltage control circuit and method that is applicable to the SFP optical module, this power on circuit and method effectively reduce the infringement of the surge current of SPF (Small Form-Factor Pluggable Transceivers) optical module power up to system.
Background technology
Along with the development of optical communication technique, optical module has obtained using widely in communication system, and hot plug (SFP) optical module is because it need not the convenience that system's integrated circuit board power down just can be changed, dominate always in system uses.But in SFP optical module power up, the surge current that is produced but has bigger infringement to system's electric power system, and is serious even cause system's electric power system to be damaged.
The surge current of SPF optical module is mainly produced by two parts electric current of optical module, wherein a kind of is to cause owing to the required big voltage (tens volts) of avalanche diode needs to bring up to tens volts of institutes from 0V by the chip that boosts in the optical module power up, its duration is generally Millisecond, slow reached second of level.APD voltage also can produce very big surge current in power up, this electric current is owing to power on initial, the micro control system of optical module does not also have complete operate as normal, APD voltage can not correctly be set, at this moment the APD booster circuit might produce the output that is higher than the required normal voltage of APD, thereby causing APD to enter the avalanche region is that APD is breakdown, and system's power supply circuits are damaged.
Summary of the invention
The present invention is in order to solve the problem that surge current damages SFP module for power supply circuit, a kind of APD high-tension circuit is provided, this circuit comprises micro-control circuit and booster circuit, described micro-control circuit is used to control booster circuit, rise according to feedback signal control voltage, make and finally reach the APD operating voltage by booster circuit boosted voltage as requested; Booster circuit comprises boost chip and voltage-multiplying circuit; The described chip that boosts receives the control signal of micro-control circuit and the feedback signal of booster circuit, according to the Control work of micro-control circuit; Described voltage-multiplying circuit carries out multiplication of voltage to the output voltage of the chip that boosts; Boost the shutoff pin of chip by the drop-down ground connection of resistance.Chip is that high voltage turn-offs owing to boost, and low-voltage is opened.In the optical module power up, to low level, is to turn-off pin to be in low-voltage by pull down resistor in the module power up always, wait to boost be provided with working properly after again by micro-control circuit output high level control logic, output is opened, so just solved output HIGH voltage problem out of control.
According to embodiments of the invention, described booster circuit adopts the DC/DC conversion to realize; Described booster circuit comprises switching transistor VT, diode VD, energy storage inductor L and output filter capacitor C; Described booster circuit recently changes output voltage by the duty that changes switching transistor VT input pulse.
According to embodiments of the invention, described voltage-multiplying circuit comprises rectifier diode and electric capacity.
The present invention also provides a kind of APD voltage control method, and it comprises the steps: power input voltage; Micro-control circuit Loading Control program, the operating voltage of just searching the corresponding chip that boosts after having loaded in look-up table is provided with the operating voltage of chip of boosting then, and opens the chip that boosts and start working, by exporting the high pressure that APD needs behind the voltage-multiplying circuit.
The present invention also provides a kind of better APD voltage control method, and it comprises the steps: the first step, power input voltage; Second step, micro-control circuit Loading Control program, the operating voltage of just in look-up table, searching the corresponding chip that boosts after having loaded, and according to information setting APD voltage steps that loads and the minimum control of APD voltage, open the chip that boosts and start working; The 3rd step, from the minimum control of APD voltage, micro-control circuit progressively increases APD control voltage according to stepping, if APD control voltage is less than operating voltage, just wait for a period of time, continue to increase APD control voltage then, equal the APD operating voltage up to APD control voltage, input voltage by boost and pass through output APD behind the voltage-multiplying circuit need high pressure.The chip input is the process that progressively increases owing to boost, and its output also is progressively to increase, the surge current of having avoided transient state to cause.
Technical solution of the present invention the protected mode that powers on, effectively reduce in the optical module power up, surge current is to the damage of optical module receiving terminal APD and system's power supply circuits.
Description of drawings
The present invention will illustrate by example and with reference to the mode of accompanying drawing, wherein:
Fig. 1 is an APD voltage control schematic diagram of the present invention;
Fig. 2 is the chip schematic diagram that boosts of the present invention;
Fig. 3 is the chip operation oscillogram of boosting of the present invention;
Fig. 4 is a voltage-multiplying circuit schematic diagram of the present invention;
Fig. 5 is one of APD voltage control method of the present invention;
Fig. 6 is two of an APD voltage control method.
Embodiment
Disclosed all features in this specification, or the step in disclosed all methods or the process except mutually exclusive feature and/or step, all can make up by any way.
Disclosed arbitrary feature in this specification (comprising any accessory claim, summary and accompanying drawing) is unless special narration all can be replaced by other equivalences or the alternative features with similar purpose.That is, unless special narration, each feature is an example in a series of equivalences or the similar characteristics.
APD voltage control circuit as shown in Figure 1 comprises micro-control circuit and booster circuit, and wherein micro-control circuit is used to control booster circuit, rises according to feedback signal control voltage, makes finally to reach the APD operating voltage by booster circuit boosted voltage as requested.Wherein booster circuit comprises boost chip and voltage-multiplying circuit; The described chip that boosts receives the control signal of micro-control circuit and the feedback signal of booster circuit, according to the Control work of micro-control circuit.In addition, the shutoff pin at the chip that boosts passes through the drop-down ground connection of resistance.Chip is that high voltage turn-offs owing to boost, and low-voltage is opened.In the optical module power up, to low level, is to turn-off pin to be in low-voltage by pull down resistor in the module power up always, wait to boost be provided with working properly after again by micro-control circuit output high level control logic, output is opened, so just solved output HIGH voltage problem out of control.
The special use that can realize the DC/DC translation function that the inner booster circuit that adopts of optical module generally all is the very ripe chip that boosts is as the LT1930 of Linear, the MAX5026 of Maxim etc.The supply voltage (3.3V or 5V) of input can be converted to the high pressure output of 20, more than 30 volts by DC/DCConverter.As an embodiment, Converter mainly is made up of switching transistor VT, diode VD, energy storage inductor L and output filter capacitor C, its circuit topological structure as shown in Figure 2, work wave is as shown in Figure 3.
The boost work period Ts=ton+toff of process: VT, VT is conducting during ton, ends during toff.
During ton, the energy of power supply Uin is stored among the L, the VT conducting, VD is anti-inclined to one side, by C to the load energize.During toff, VT ends, and the electric current among the L can not suddenly change, and produces induced potential prevention electric current and reduces, and the polarity of induced potential is that a right positive left side is negative, the VD conducting, and the energy of storing among the L is through VD, inflow C, and supply load.
Wherein, U
0Be output voltage, U
InBe input voltage, δ=ton/Ts is a duty ratio, when changing δ, just can obtain the voltage of required rising.
Though DC/DC Converter can export the voltage of 20, more than 30 volts, the operating voltage of APD is up to 50, more than 60 volts, and this just need carry out multiplication of voltage with the output voltage of Converter, to satisfy the need of work of APD.Voltage-multiplying circuit generally is made of rectifier diode and electric capacity, and the Boost Converter that introduces is previously carried out multiplication of voltage, and typical voltage-multiplying circuit as shown in Figure 4.
Its multiplication of voltage process:
When 1. VT ends, the L discharge, the D1 conducting, D2 ends, and electric current charges to C1 through D1, and the C1 both end voltage reaches VC1 (the reverse induction electromotive force that L produces).
2. during the VT conducting, the L energy storage, VC1＞Va, D1 ends, the D2 conducting.At this moment, the electric charge of C1 charges to C2 through D2, until C2 both end voltage VC2=VC1.
When 3. VT ends once more, the L discharge, reverse induction electromotive force that L produces and the voltage synergy VC2+VC1 on the C2 charge to C3 by D3, and the voltage on the C3 is approximately 2VC1 at this moment, has realized two multiplication of voltages.
Fig. 5 is the control flow of APD correspondence: power input voltage (general 3.3-5V) is a low-voltage because the chip that boosts turn-offs pin, and APD voltage voltage is in off state; This moment micro-control circuit Loading Control program, just in look-up table, search the operating voltage of the corresponding chip that boosts after having loaded, the operating voltage (25-30V) of chip of boosting is set then, and opens the chip that boosts and start working, by exporting the high pressure (50-60V) that APD needs behind the voltage-multiplying circuit.
Though APD circuit of the present invention has solved output HIGH voltage problem out of control.But, also be a transient changing process because output logic is opened the booster circuit output voltage, so at this moment APD voltage also can jump to target voltage from zero volt, APD still can cause the generation of surge current in the power up.For this reason, the present invention also provides a kind of improved control method.
Improved control method as shown in Figure 6, it is to be a progressive formation that its core is to make output logic to open the booster circuit output voltage.Power input voltage (general 3.3-5V) is a low-voltage because the chip that boosts turn-offs pin, and APD voltage voltage is in off state; This moment micro-control circuit Loading Control program, the operating voltage of just searching the chip that boosts of correspondence the loading after in look-up table, and control voltage according to the information setting APD voltage steps and the APD minimum of loading is opened the chip that boosts and is started working; From the minimum control of APD voltage, micro-control circuit progressively increases APD control voltage according to stepping, if APD control voltage is less than operating voltage, just wait for a period of time, as 10us, continue to increase APD control voltage then, equal APD operating voltage (25-30V) up to APD control voltage, input voltage by boost and pass through output APD behind the voltage-multiplying circuit need high pressure (50-60V).
The chip input is the process that progressively increases owing to boost, and its output also is progressively to increase, the surge current of having avoided transient state to cause.
The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination that discloses in this manual, and the arbitrary new method that discloses or step or any new combination of process.
Claims (7)
1. an APD voltage control circuit comprises micro-control circuit and booster circuit,
Described micro-control circuit is used to control booster circuit, rises according to feedback signal control voltage, makes finally to reach the APD operating voltage by booster circuit boosted voltage as requested;
Booster circuit comprises boost chip and voltage-multiplying circuit; The described chip that boosts receives the control signal of micro-control circuit and the feedback signal of booster circuit, according to the Control work of micro-control circuit; Described voltage-multiplying circuit carries out multiplication of voltage to the output voltage of the chip that boosts;
It is characterized in that the shutoff pin of the chip that boosts is by the drop-down ground connection of resistance.
2. APD voltage control circuit as claimed in claim 1 is characterized in that, described booster circuit adopts the DC/DC conversion to realize.
3. APD voltage control circuit as claimed in claim 2 is characterized in that, described booster circuit comprises switching transistor VT, diode VD, energy storage inductor L and output filter capacitor C.
4. APD voltage control circuit as claimed in claim 3 is characterized in that, described booster circuit recently changes output voltage by the duty that changes switching transistor VT input pulse.
5. as the described APD voltage control circuit of one of claim 1 to 4, it is characterized in that described voltage-multiplying circuit comprises rectifier diode and electric capacity.
6. APD voltage control method, it comprises the steps:
Power input voltage;
Micro-control circuit Loading Control program, the operating voltage of just searching the corresponding chip that boosts after having loaded in look-up table is provided with the operating voltage of chip of boosting then, and opens the chip that boosts and start working, by exporting the high pressure that APD needs behind the voltage-multiplying circuit.
7. APD voltage control method, it comprises the steps:
The first step, power input voltage;
Second step, micro-control circuit Loading Control program, the operating voltage of just in look-up table, searching the corresponding chip that boosts after having loaded, and according to information setting APD voltage steps that loads and the minimum control of APD voltage, open the chip that boosts and start working;
The 3rd step, from the minimum control of APD voltage, micro-control circuit progressively increases APD control voltage according to stepping, if APD control voltage is less than operating voltage, just wait for a period of time, continue to increase APD control voltage then, equal the APD operating voltage up to APD control voltage, input voltage by boost and pass through output APD behind the voltage-multiplying circuit need high pressure.
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| CN201110215791.6A CN102255505B (en) | 2011-07-29 | 2011-07-29 | APD (avalanche photo diode) voltage control circuit and method |
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| CN201110215791.6A CN102255505B (en) | 2011-07-29 | 2011-07-29 | APD (avalanche photo diode) voltage control circuit and method |
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| CN102255505B CN102255505B (en) | 2015-03-18 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664521A (en) * | 2012-05-02 | 2012-09-12 | 洪珍 | Direct current (DC) boosted circuit made from time base circuit |
| CN102684777A (en) * | 2012-06-14 | 2012-09-19 | 青岛海信宽带多媒体技术有限公司 | Optical module and initialization method and device thereof |
| CN102761250A (en) * | 2012-04-28 | 2012-10-31 | 中国矿业大学(北京) | Medium-and-high-frequency voltage conversion device for geologic radar |
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
| CN104009950A (en) * | 2013-02-21 | 2014-08-27 | 京信通信系统（广州）有限公司 | Method and apparatus for protecting power amplifier in digital predistortion power amplifier system |
| CN104810882A (en) * | 2015-03-19 | 2015-07-29 | 广东欧珀移动通信有限公司 | Power supply circuit of remote controller |
| CN105045326A (en) * | 2015-06-26 | 2015-11-11 | 东莞光智通讯科技有限公司 | Method and device for remaining high voltage of APD (Avalanche Photo Diode) unchanged in case of biasing of power supply voltage |
| CN106100336A (en) * | 2016-08-17 | 2016-11-09 | 深圳市华星光电技术有限公司 | DC voltage converting circuit and there is the display floater of this DC voltage converting circuit |
| CN106374603A (en) * | 2016-09-14 | 2017-02-01 | 湖北三江航天红林探控有限公司 | Anti-high over-loaded secondary power supply device |
| CN107196505A (en) * | 2017-05-24 | 2017-09-22 | 青岛海信宽带多媒体技术有限公司 | Optical module booster circuit and optical module |
| CN109194117A (en) * | 2018-08-27 | 2019-01-11 | 矽力杰半导体技术(杭州)有限公司 | Multiple-channel output power inverter and its control method |
| CN111431613A (en) * | 2020-03-20 | 2020-07-17 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN113258535A (en) * | 2021-07-07 | 2021-08-13 | 上海芯龙半导体技术股份有限公司 | Under-voltage turn-off output module, BOOST power supply chip and boosting power supply system |
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Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102761250B (en) * | 2012-04-28 | 2015-04-29 | 中国矿业大学(北京) | Medium-and-high-frequency voltage conversion device for geologic radar |
| CN102761250A (en) * | 2012-04-28 | 2012-10-31 | 中国矿业大学(北京) | Medium-and-high-frequency voltage conversion device for geologic radar |
| CN102664521A (en) * | 2012-05-02 | 2012-09-12 | 洪珍 | Direct current (DC) boosted circuit made from time base circuit |
| CN102684777A (en) * | 2012-06-14 | 2012-09-19 | 青岛海信宽带多媒体技术有限公司 | Optical module and initialization method and device thereof |
| CN104009950A (en) * | 2013-02-21 | 2014-08-27 | 京信通信系统（广州）有限公司 | Method and apparatus for protecting power amplifier in digital predistortion power amplifier system |
| CN103457673B (en) * | 2013-07-26 | 2016-03-09 | 厦门优迅高速芯片有限公司 | Improve the method and apparatus of APD optical receiver saturated light power |
| CN103457673A (en) * | 2013-07-26 | 2013-12-18 | 厦门优迅高速芯片有限公司 | Method and device for improving saturated light power of APD optical receiver |
| CN104810882A (en) * | 2015-03-19 | 2015-07-29 | 广东欧珀移动通信有限公司 | Power supply circuit of remote controller |
| CN105045326A (en) * | 2015-06-26 | 2015-11-11 | 东莞光智通讯科技有限公司 | Method and device for remaining high voltage of APD (Avalanche Photo Diode) unchanged in case of biasing of power supply voltage |
| CN106100336A (en) * | 2016-08-17 | 2016-11-09 | 深圳市华星光电技术有限公司 | DC voltage converting circuit and there is the display floater of this DC voltage converting circuit |
| CN106374603B (en) * | 2016-09-14 | 2019-06-18 | 湖北三江航天红林探控有限公司 | A kind of anti high overload secondary power supply device |
| CN106374603A (en) * | 2016-09-14 | 2017-02-01 | 湖北三江航天红林探控有限公司 | Anti-high over-loaded secondary power supply device |
| CN107196505A (en) * | 2017-05-24 | 2017-09-22 | 青岛海信宽带多媒体技术有限公司 | Optical module booster circuit and optical module |
| CN109194117A (en) * | 2018-08-27 | 2019-01-11 | 矽力杰半导体技术(杭州)有限公司 | Multiple-channel output power inverter and its control method |
| CN109194117B (en) * | 2018-08-27 | 2020-10-16 | 矽力杰半导体技术(杭州)有限公司 | Multi-output power converter and control method thereof |
| CN111431613A (en) * | 2020-03-20 | 2020-07-17 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN111431613B (en) * | 2020-03-20 | 2023-03-21 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN113258535A (en) * | 2021-07-07 | 2021-08-13 | 上海芯龙半导体技术股份有限公司 | Under-voltage turn-off output module, BOOST power supply chip and boosting power supply system |
| CN113258535B (en) * | 2021-07-07 | 2021-09-17 | 上海芯龙半导体技术股份有限公司 | Under-voltage turn-off output module, BOOST power supply chip and boosting power supply system |
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Address after: 611731 of the western Sichuan city of Chengdu province high tech Zone Kexinlu No. 8 Chengdu Export Processing Zone West No. 2 No. 5 standard factory Applicant after: Source Photonics (Chengdu) Co., Ltd. Address before: 611731 of the western Sichuan city of Chengdu province high tech Zone Kexinlu No. 8 Chengdu Export Processing Zone West No. 2 No. 5 standard factory Applicant before: Source Photonics (Chengdu) Co., Ltd. |
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