CN102254776A - Linear microwave plasma source with eccentric slot variable medium wave guide tube - Google Patents
Linear microwave plasma source with eccentric slot variable medium wave guide tube Download PDFInfo
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- CN102254776A CN102254776A CN2010101857362A CN201010185736A CN102254776A CN 102254776 A CN102254776 A CN 102254776A CN 2010101857362 A CN2010101857362 A CN 2010101857362A CN 201010185736 A CN201010185736 A CN 201010185736A CN 102254776 A CN102254776 A CN 102254776A
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- wave guide
- rectangular wave
- movable block
- plasma source
- microwave plasma
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Abstract
The invention discloses a linear microwave plasma source with an eccentric slot variable medium wave guide tube. The linear microwave plasma source comprises a reaction chamber, a rectangular wave guide tube, a quartz plate and an adjusting device. The rectangular wave guide tube is arranged on the reaction chamber. The bottom wall of the rectangular wave guide tube is provided with a slender eccentric slot which is arranged eccentrically. The bottom wall is distinguished into a wide edge and a narrow edge through the eccentric slot. The rectangular wave guide tube is communicated with the reaction chamber through the eccentric slot. The quartz plate is embedded in the eccentric slot and positioned between the rectangular wave guide tube and the plasma reaction chamber. The adjusting device is provided with a screw and a dielectric movable block. The movable block is connected with the screw and glidingly arranged in the rectangular wave guide tube. With the help of adjustment of the screw, the movable block moves so as to reach an optimal microwave leakage ratio. In the event of not increasing the microwave emission power, the plasma linear length is extended so as to achieve a large-area conveying belt manufacture process.
Description
Technical field
The present invention relates to microwave plasma source, particularly relate to a kind of line style microwave plasma source with the variable dielectric waveguide of eccentric fluting.
Background technology
For the production capacity in response to the silicon wafer solar cell improves constantly, the manufacture craft of the continuous plasma assistant chemical vapor deposition (plasma enhanced chemicalvapor deposition) that the anti-reflective film film forming manufacture craft of most critical is required must be followed to make significantly and be changed, just employed plasma source must prolong vertical transport band direction and do significantly line style extension, to meet the product line production capacity that improves day by day.The present invention proposes a kind of long line style microwave plasma source to meet this demand, and details are as follows for its each bilge construction and function.
Please refer to Fig. 1, is the end view of the existing long line style microwave plasma source of expression.Existing a kind of long line style microwave plasma source 100 is as described in Deutsche Bundespatent DE19812558A1 number; Comprise reaction cavity 110, quartz ampoule 120 and cylinder waveguide pipe 130, wherein cylinder waveguide pipe 130 is to be disposed in the quartz ampoule 120, and quartz ampoule is 120 to be disposed in the reaction cavity 110.
After applying microwave from cylinder waveguide pipe 130 two ends, microwave can transmit in cylinder waveguide pipe 130, and penetrates quartz ampoule 120 with activated plasma 60 from cylinder waveguide pipe 130 surfaces to external radiation.Then, by the formation of plasma 60 on silicon substrate 140 deposit film, to finish the plasma program.
Refer again to Fig. 2 and Fig. 3, the plasma distribution schematic diagram of the existing long line style microwave plasma source of its expression, wherein the longitudinal axis is a plasma density, transverse axis is the position.Plasma density n
1For applying the plasma distribution that microwave produces from the waveguide pipe left side, it is decayed to the right and gradually; Relatively, plasma density n
2For applying the plasma distribution that microwave produces from the waveguide pipe right side, it is decayed to the left and gradually.Therefore, actual plasma density n is by plasma density n in the reaction cavity
1With plasma density n
2Totalling.
Yet, under the volume production that maximizes requires, need to increase the size of long line style microwave plasma source 100 to promote the speed of plated film area.Thus, no matter be that microwave of importing from the left side or the microwave of importing from the right side all do not spill before arriving at relative opposite side fully, and the plasma density n that actual microwave excited is plasma density n
1With plasma density n
2Totalling, and present uneven phenomenon, that is the two side areas plasma density is higher, and the lower situation of zone line plasma density.If the spilling speed and can control of microwave, the uneven situation of so above-mentioned plasma density just can be improved, that is to say, the rate that spills of controlled microwave, no matter make is from the microwave of left side input or the microwave of importing from the right side all spills when arriving at relative opposite side fully, and so the plasma density n that actual microwave excited (is plasma density n
1With plasma density n
2Totalling), will be as shown in Figure 3, the line style of plasma density is distributed reaches even.
Though also can overcome foregoing problems,,, and then influence the stable of plasma with the arc discharge phenomenon aggravation that makes near zone, waveguide pipe left and right sides plasma along with the increase of microwave power by the input power that increases microwave; Moreover it is the power grade that is proportional to power that microwave power increases the expense increased, so the price of High-Power Microwave generator is very expensive, and makes the too high forfeiture competitiveness of manufacture craft cost.
On the other hand, because quartz ampoule is to be in the state that is surrounded by plasma, so film also can be deposited on the quartz ampoule; This can cause the bleed speed of plasma of microwave power to change, and causes the plasma density distribution unevenness, makes that the one-tenth film quality on the silicon substrate descends.
Though the periodic replacement quartz ampoule can overcome microwave plasma the problems referred to above, maintenance of equipment time charge day makes production capacity reduce when spacious.
Based on the problems referred to above, the inventor has proposed the line style microwave plasma source of the variable dielectric waveguide of the eccentric fluting of a kind of tool, to overcome the defective of prior art.
Summary of the invention
The object of the invention is to provide a kind of line style microwave plasma source with the variable dielectric waveguide of eccentric fluting, improves the effect that plasma spills rate, reduces cost and reduce equipment loss to reach.
To achieve these goals, the invention provides the line style microwave plasma source of the variable dielectric waveguide of the eccentric fluting of a kind of tool, comprise: a reaction chamber; One rectangular wave guide, be arranged on this reaction chamber, one diapire of this rectangular wave guide has the off-center position and an eccentric elongated eccentric fluting that is provided with, this rectangular wave guide is to be communicated with this reaction chamber with this off-centre fluting, and should the off-centre fluting this diapire be distinguished into a broadside and a narrow limit; One quartz plate removably is embedded in this off-centre fluting, and between this rectangular wave guide and this reaction chamber; And an adjusting device, having a screw rod and a dielectric medium movable block, this movable block is connected with this screw rod and is slidingly installed in movably in this rectangular wave guide, and carries out displacement by the adjustment of this screw rod.
This rectangular wave guide has more one first vertical sidewall that is connected with this broadside, and one second vertical sidewall that is connected with this narrow limit; If this movable block is arranged on this broadside, this screw rod vertically is located in this first vertical sidewall, this movable block through this second fluting and with this second vertical sidewall one first distance at interval, and the end that this movable block and this screw rod penetrate in this rectangular wave guide is connected, and by this screw rod adjust this movable block towards or move and adjust this first distance away from this off-centre fluting; If this movable block is arranged on this narrow limit, this screw rod vertically is located in this second vertical sidewall, this movable block through this off-centre fluting and with this first vertical sidewall second distance at interval, and the end that this movable block and this screw rod penetrate in this rectangular wave guide is connected, and by this screw rod adjust this movable block towards or move and adjust this second distance away from this off-centre fluting; Suitably adjust this movable block and this second vertical sidewall first distance at interval, can adjust microwave power self-conductance wave duct, and then the line style of plasma density is distributed reach even via the off-centre fluting speed of plasma of bleeding.
Description of drawings
Fig. 1 is the end view of existing long line style microwave plasma source;
Fig. 2 is the plasma distribution schematic diagram of existing long line style microwave plasma source;
Fig. 3 is the plasma distribution schematic diagram of existing long line style microwave plasma source;
Fig. 4 is to use the schematic diagram of the board of line style microwave plasma source of the present invention;
Fig. 5 is the cutaway view of line style microwave plasma source of the present invention;
Fig. 6 is the adjustment schematic diagram of adjusting device of the present invention.
The main element symbol description
10 conveying devices
20 substrates
301 are written into the district
302 thermals treatment zone
303 cooling zones
304 unload zones
40 microwave sources
1 line style microwave plasma source
2 reaction chambers
3 rectangular wave guides
31 eccentric flutings
32 first vertical sidewalls
33 second vertical sidewalls
34 broadsides
35 narrow limits
4 English plates
5 adjusting devices
51 screw rods
52 dielectric medium movable blocks
D first distance
The n plasma density
n
1Plasma density
n
2Plasma density
100 long line style microwave plasma sources
110 reaction cavities
120 quartz ampoules
130 cylinder waveguide pipe
140 silicon substrates
60 plasmas
Embodiment
Though the present invention has used several embodiment to make an explanation, following the drawings and the specific embodiments only are embodiments of the invention; The embodiment that is disclosed below it should be noted that only is an example of the present invention, does not represent that the present invention is limited to following the drawings and the specific embodiments.
Please also refer to Fig. 4 and Fig. 5, it represents to use the schematic diagram of board of line style microwave plasma source of the present invention and the cutaway view of line style microwave plasma source of the present invention respectively.
Line style microwave plasma source 1 of the present invention is erected at a conveying device 10 tops with a conveyer belt 101, and the substrate 20 (can be silicon substrate) for the treatment of etching or going up film is arranged on conveying device 10 upper edge X-directions and moves, substrate 20 is in regular turn through being written into district 301, the thermal treatment zone 302, line style microwave plasma source 1, cooling zone 303 and unload zone 304, substrate 20 301 is written into operation being written into the district, when substrate 20 proceeds to the thermal treatment zone 302, heat and reduce pressure, substrate 20 roughly has been in the vacuum state environment during to line style microwave plasma source 1, substrate 20 cools off and the pressurization operation during to cooling zone 303, substrate 20 has reached the identical atmospheric pressure environment of external environment during to unload zone 304, and carries out unloading operation; Line style microwave plasma source 1 is with the parallel Z-direction setting of its major axis, and the two ends of line style microwave plasma source 1 on Z-direction connect microwave source 40.
Line style microwave plasma source 1 of the present invention comprises a reaction chamber 2, a rectangular wave guide 3, a quartz plate 4 and an adjusting device 5.
In the present embodiment, the speed adjusting device 5 that microwave spills from the rectangle waveguide pipe has a screw rod 51 and a dielectric medium movable block 52, and screw rod 51 and movable block 52 are that insulating material such as dielectric material are made; Movable block 52 is connected with screw rod 51 and is slidingly installed in movably in the rectangular wave guide 3, and the adjustment of mat screw rod 51 and carry out displacement; Adjusting device 5 is controlled automatically with software program or is adjusted with manual mode.
In detail, if movable block 52 is arranged on broadside 34,51 of screw rods vertically are located in first vertical sidewall 32, movable block 52 through off-centre fluting 31 and with second vertical sidewall 33, one first distance D at interval, and the end that movable block 52 and screw rod 51 penetrate in the rectangular wave guide 3 is connected, and by screw rod 51 adjust movable blocks 52 towards or adjust first distance D (as shown in Figure 5) away from off-centre fluting 31 moves; Or movable block 52 is arranged on narrow limit 35,51 of screw rods vertically are located in second vertical sidewall 33, movable block 52 through off-centre fluting 31 and with first vertical sidewall 32 second distance at interval, and the end that movable block 52 and screw rod 51 penetrate in the rectangular wave guide 3 is connected, and by screw rod 51 adjust movable blocks 52 towards or adjust second distance (as shown in Figure 6) away from off-centre fluting 31 moves.
By Paschen's law (Paschen ' s law) as can be known, incipient discharge voltage V
sBe when gas pressure p and interelectrode distance d (being the groove width of eccentric fluting 31, for changeable) long-pending is worth for certain, can get minimum (handkerchief Shen minimum value).Thereby, when the gas force pressure p is certain words, (be about 5～10mm) as long as the groove width d of eccentric fluting 31 is enough little, can avoid plasma in groove, to generate, and then avoid quartz plate 4 to suffer the chemical vapour deposition (CVD) of plasma, that is avoid thin film deposition in quartz plate 4, and more can prolong the useful life and the replacement cycle of quartz plate 4, improve production capacity thus.
Though the present invention makes an explanation with relevant embodiment, this is not construed as limiting the invention.It should be noted that those skilled in the art can construct a lot of other similar embodiment according to thought of the present invention, these are all among claim of the present invention.
Claims (10)
1. line style microwave plasma source comprises:
Reaction chamber;
Rectangular wave guide, be arranged on this reaction chamber, the diapire of this rectangular wave guide has the off-center position and the eccentric elongated eccentric fluting that is provided with, and this rectangular wave guide is communicated with this reaction chamber with this off-centre fluting, and should the off-centre fluting this diapire be distinguished into a broadside and a narrow limit;
Quartz plate removably is embedded in this off-centre fluting and between this reaction chamber and this rectangular wave guide; And
Adjusting device is slidingly installed in this rectangular wave guide movably.
2. according to the described line style microwave plasma source of claim 1, wherein, this rectangular wave guide also has first vertical sidewall that is connected with this broadside, and second vertical sidewall that is connected with this narrow limit.
3. according to the described line style microwave plasma source of claim 2, wherein, this adjusting device has dielectric medium screw rod and dielectric medium movable block, and this movable block is connected with this screw rod and is slidingly installed in movably in this rectangular wave guide, and carries out displacement by the adjustment of this screw rod.
4. according to the described line style microwave plasma source of claim 3, wherein, this movable block is arranged on this broadside, this screw rod vertically is located in this first vertical sidewall, this movable block through this off-centre fluting and with this second vertical sidewall one first distance at interval, and the end that this movable block and this screw rod penetrate in this rectangular wave guide is connected, and by this screw rod adjust this movable block towards or move and adjust this first distance away from this off-centre fluting.
5. according to the described line style microwave plasma source of claim 3, wherein, this movable block is arranged on this narrow limit, this screw rod vertically is located in this second vertical sidewall, this movable block through this off-centre fluting and with this first vertical sidewall second distance at interval, and the end that this movable block and this screw rod penetrate in this rectangular wave guide is connected, and by this screw rod adjust this movable block towards or move and adjust this second distance away from this off-centre fluting.
6. according to the described line style microwave plasma source of claim 1, wherein, this reaction chamber below is provided with a conveying device, and this conveying device is towards direction transmission that vertically should the off-centre fluting.
7. according to the described line style microwave plasma source of claim 1, wherein, this screw rod and this movable block are dielectric material.
8. according to the described line style microwave plasma source of claim 1, wherein, this adjusting device is adjusted in the automatic or manual mode.
9. according to the described line style microwave plasma source of claim 1, eccentric fluting and first vertical sidewall of this rectangular wave guide, the eccentric distance between second vertical sidewall can change.
10. according to the described line style microwave plasma source of claim 1, a groove width of eccentric fluting can change.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101857362A CN102254776A (en) | 2010-05-19 | 2010-05-19 | Linear microwave plasma source with eccentric slot variable medium wave guide tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101857362A CN102254776A (en) | 2010-05-19 | 2010-05-19 | Linear microwave plasma source with eccentric slot variable medium wave guide tube |
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|---|---|
| CN102254776A true CN102254776A (en) | 2011-11-23 |
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| CN2010101857362A Pending CN102254776A (en) | 2010-05-19 | 2010-05-19 | Linear microwave plasma source with eccentric slot variable medium wave guide tube |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262610A (en) * | 1991-03-29 | 1993-11-16 | The United States Of America As Represented By The Air Force | Low particulate reliability enhanced remote microwave plasma discharge device |
| US5843236A (en) * | 1994-09-16 | 1998-12-01 | Daihen Corporation | Plasma processing apparatus for radiating microwave from rectangular waveguide through long slot to plasma chamber |
| US7485204B2 (en) * | 2002-04-09 | 2009-02-03 | Mes Afty Corporation | ECR plasma source and ECR plasma device |
| US20090151637A1 (en) * | 2007-12-13 | 2009-06-18 | Industrial Technology Research Institute | Microwave-excited plasma source using ridged wave-guide line-type microwave plasma reactor |
-
2010
- 2010-05-19 CN CN2010101857362A patent/CN102254776A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5262610A (en) * | 1991-03-29 | 1993-11-16 | The United States Of America As Represented By The Air Force | Low particulate reliability enhanced remote microwave plasma discharge device |
| US5843236A (en) * | 1994-09-16 | 1998-12-01 | Daihen Corporation | Plasma processing apparatus for radiating microwave from rectangular waveguide through long slot to plasma chamber |
| US7485204B2 (en) * | 2002-04-09 | 2009-02-03 | Mes Afty Corporation | ECR plasma source and ECR plasma device |
| US20090151637A1 (en) * | 2007-12-13 | 2009-06-18 | Industrial Technology Research Institute | Microwave-excited plasma source using ridged wave-guide line-type microwave plasma reactor |
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Application publication date: 20111123 |