CN102251220A - Mixed gas supply system, sputtering device and sputtering method - Google Patents
Mixed gas supply system, sputtering device and sputtering method Download PDFInfo
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- CN102251220A CN102251220A CN2010101770049A CN201010177004A CN102251220A CN 102251220 A CN102251220 A CN 102251220A CN 2010101770049 A CN2010101770049 A CN 2010101770049A CN 201010177004 A CN201010177004 A CN 201010177004A CN 102251220 A CN102251220 A CN 102251220A
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Abstract
The invention relates to a mixed gas supply system, a sputtering device comprising the mixed gas supply system and a sputtering method. The mixed gas supply system comprises at least two gas sources, at least two gas mass flow controllers, at least two first valves, at least two triple valves, a plurality of second valves, two mixing chambers and two third valves, wherein, each gas source is connected with a first valve and a gas mass flow controller successively, each gas mass flow controller is connected with a second valve and one of the two mixing chambers successively through a triple valve, and each mixing chamber is provided with an air outlet which is controlled to open or close by a third valve. According to the invention, the sputtering method is used for sputtering a plurality of films continuously with saving a lot of time.
Description
Technical field
The present invention relates to the sputter technical field, relate in particular to a kind of mixed gas plenum system, a kind of sputtering apparatus and a kind of jet-plating method.
Background technology
Sputter is to utilize the ionic bombardment target, and the atom in the target is knocking-on and be deposited on substrate surface and pile up film forming.When the sputter compound film, if be target with the compound directly, the film composition that sputter goes out can differ greatly with the target composition, so generally when the sputter compound film, usually reactant gases is mixed in the discharge gas, the atom that this reactant gases and target clash into out carries out chemical reaction, and with the composition and the character of control compound film, this kind jet-plating method is called reactive sputter.
Plate the surface property that multilayer film can improve workpiece in workpiece surface.Need adopt multiple reactant gases when adopting reactive sputter to plate multilayer film.For a plating skim, also need sometimes in the mixed gas that two or more reactant gases is formed, to carry out.Existing sputtering apparatus is provided with hybrid chamber and mixes two or more reactant gases, then with mixed gas input sputter chamber.If the ratio or the gaseous species difference of each reactant gases in the pairing mixed gas of adjacent two layers rete to be plated, then need take a breath, after soon the pairing mixed gas of lower floor's rete will all be extracted this hybrid chamber out, importing new reactant gases to this hybrid chamber then in proportion mixes, obtain the mixed gas of upper strata rete correspondence, again this mixed gas is transported to the sputter chamber, more consuming time.Accordingly, in this section time of exchanging gas, because of waiting for mixed gas, reactive sputter is forced to interrupt, and is unfavorable for improving production capacity.
In view of this, it is real in necessary to provide a kind of mixed gas plenum system, a kind of sputtering apparatus and a kind of jet-plating method to improve production capacity.
Summary of the invention
Below be that example illustrates a kind of mixed gas plenum system, a kind of sputtering apparatus and a kind of jet-plating method with the embodiment.
A kind of mixed gas plenum system comprises at least two gas sources, at least two gas mass flow amount controllers, at least two first valves, at least two three-way valves, a plurality of second valve, two hybrid chambers and two the 3rd valves.Each gas source links to each other successively with one first valve and a gas mass flow amount controller.Each gas mass flow amount controller by three-way valve optionally with one second valve and this two hybrid chambers in a hybrid chamber link to each other successively.Each hybrid chamber is provided with the air outlet, and this air outlet communicates with one the 3rd valve.
A kind of sputtering apparatus comprises the sputter chamber and is used in this sputter chamber the mixed gas plenum system of supply mixed gas.This mixed gas plenum system comprises at least two gas sources, at least two gas mass flow amount controllers, at least two first valves, at least two three-way valves, a plurality of second valve, two hybrid chambers and two the 3rd valves.Each gas source links to each other successively with one first valve and a gas mass flow amount controller.Each gas mass flow amount controller by three-way valve optionally with one second valve and this two hybrid chambers in a hybrid chamber link to each other successively.Each hybrid chamber is provided with the air outlet, and this air outlet links to each other with this sputter chamber by one the 3rd valve.
A kind of jet-plating method comprises: aforementioned sputtering apparatus and workpiece to be plated are provided; In importing various reactant gasess from the hybrid chamber of these at least two gas sources in these two hybrid chambers under the control of this three-way valve, mix the mixed gas of winning; Carry this first mixed gas to this sputter chamber, this workpiece of sputter in importing various reactant gasess from these two gas sources another hybrid chamber in these two hybrid chambers under the control of this three-way valve, mixes simultaneously at least, gets second mixed gas; Carry this second mixed gas to this sputter chamber, this workpiece of sputter.
Compared to prior art, the sputtering apparatus that the technical program provides comprises two hybrid chambers.When the mixed gas that adopts one of these two hybrid chambers hybrid chamber the time in the reactive sputter lower membrane of workpiece surface, can adopt another hybrid chamber mixing upper layer film desired gas of these two hybrid chambers, treat that the lower membrane plating finishes, can adopt the gas sputter upper layer film in this another hybrid chamber immediately, avoid waiting for mixed gas thus, save the plenty of time, significantly improve production capacity.
Description of drawings
The synoptic diagram of the sputtering apparatus that Fig. 1 provides for the technical program one embodiment.
The synoptic diagram of the sputtering apparatus that Fig. 2 provides for another embodiment of the technical program.
The main element nomenclature
Sputtering apparatus 100,200
Mixed gas plenum system 40,240
Gas source 51,251
Gas mass flow amount controller 52,252
First valve 53,253
T-valve 54,254
Second valve 55,255
First hybrid chamber 56,256
Second hybrid chamber 57,257
Off-gas pump 58,258
The 3rd valve 59,259
Target 11,270
The first sputter chamber 10
The second sputter chamber 20
E Foerderanlage 30
Inert gas inleting pipe 12
Connect valve 50
Embodiment
Below in conjunction with embodiment and accompanying drawing mixed gas plenum system, sputtering apparatus and the jet-plating method that the technical program provides is elaborated.
Referring to Fig. 1, the sputtering apparatus 100 that the technical program one embodiment provides comprises the first sputter chamber 10, the second sputter chamber 20, e Foerderanlage 30 and mixed gas plenum system 40.
The first sputter chamber 10 and the second sputter chamber 20 can communicate by connecting valve 50.Be equipped with target 11 and inert gas inleting pipe 12 in the first sputter chamber 10 and the second sputter chamber 20.This inert gas inleting pipe 12 links to each other with inert gas source (figure does not show), is used for the required rare gas element of input sputter in the first sputter chamber 10 and the second sputter chamber 20, as argon gas.
E Foerderanlage 30 is used for workpiece is delivered to the second sputter chamber 20 from the first sputter chamber 10 under the drive unit driving of (figure does not show).
Mixed gas plenum system 50 comprises the gas source 51 of three separate settings, three gas mass flow amount controllers (mass flow controller, MFC) 52, three first valves 53, three T-valve 54, six second valves 55, first hybrid chamber 56, second hybrid chamber 57, two off-gas pumps 58 and two the 3rd valves 59.
These three gas sources 51 are used for providing respectively the various blended reactant gasess that need.In the present embodiment, these three gas sources 51 provide nitrogen, acetylene and oxygen respectively.Each gas source 51 is connected successively with one first valve 53, a gas mass flow amount controller 52.Each T-valve 54 links to each other with a gas mass flow amount controller 52 and two second valves 55 respectively.
Compared to prior art, the sputtering apparatus 100 that present embodiment provides is provided with two hybrid chambers, i.e. first hybrid chamber 56 and second hybrid chamber 57.In the first sputter chamber 10, workpiece is carried out reactive sputter if need, can be prior in this first hybrid chamber 56, importing each reactant gases from this three gas source 51 under the control of these three three-way valves 54, mix, the mixed gas of winning, and this first mixed gas is delivered to this first sputter chamber 10, this workpiece of sputter via this air outlet 561 and the 3rd valve 59.Meanwhile,, gas in each gas source 51 is transported in second hybrid chamber 57 is mixed by control T-valve 54, second mixed gas.After waiting to finish the plating lower membrane, utilize e Foerderanlage 30 with in this workpiece transfer to the second sputter chamber 20, open the 3rd valve 59 that links to each other with second hybrid chamber 57, this second mixed gas is transported to this second sputter chamber 20, can use this second mixed gas immediately in this lower membrane plated film.Meanwhile, control T-valve 54 is imported in first hybrid chamber 56 gas in each gas source 51 and is mixed.So repeat, then can realize the sputter multimembrane, and avoid waiting for mixed gas, save the plenty of time, significantly improve production capacity.
Be appreciated that, if after finishing the plating lower membrane, if still have mixed with little amount gas in first hybrid chamber 56, can be when carrying this second mixed gas to this second sputter chamber 57, the 3rd valve 59 of closing second valve 55 and linking to each other with first hybrid chamber 56 utilizes off-gas pump 58 to pump this and remains first mixed gas.Control T-valve 54 again, in first hybrid chamber 56, import gas from each gas source 51.As the same for second hybrid chamber 57, repeat no more.
Referring to Fig. 2, the sputtering apparatus 200 that the another embodiment of the technical program provides comprises a mixed gas plenum system 240 and a sputter chamber 250.
Mixed gas plenum system 240 has the structure similar with mixed gas plenum system 40, and it comprises the gas source 251 of three separate settings, three gas mass flow amount controllers 252, three first valves 253, three T-valve 254, six second valves 255, first hybrid chamber 256, second hybrid chamber 257, two off-gas pumps 258 and two the 3rd valves 259.
Mixed gas plenum system 240 also comprises three reverse checkvalves 260.Each reverse checkvalve 260 communicates with a gas mass flow amount controller 252 and a T-valve 254 respectively.Reverse checkvalve 260 can be avoided the mixed gas adverse current return-air physique amount flow director 252 in first hybrid chamber 256 or second hybrid chamber 257, pollutes the gas in it.
In addition, this first hybrid chamber 256 communicates with second hybrid chamber 257 by these two the 3rd valves 259.This first hybrid chamber 256 also communicates by a valve with sputter chamber 250.
Be understandable that those skilled in the art also can do other variation etc. and be used for design of the present invention in spirit of the present invention, as long as it does not depart from technique effect of the present invention and all can.The variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (10)
1. mixed gas plenum system, it comprises at least two gas sources, at least two gas mass flow amount controllers and at least two first valves, each gas source links to each other successively with one first valve and a gas mass flow amount controller, it is characterized in that, this mixed gas plenum system also comprises at least two three-way valves, a plurality of second valves, two hybrid chambers and two the 3rd valves, each gas mass flow amount controller optionally links to each other with one of one second valve and these two hybrid chambers hybrid chamber successively by a three-way valve, each hybrid chamber is provided with the air outlet, and this air outlet is by one the 3rd valve folding.
2. mixed gas plenum system as claimed in claim 1 is characterized in that, this mixed gas plenum system also comprises two off-gas pumps, and each off-gas pump communicates with a hybrid chamber.
3. mixed gas plenum system as claimed in claim 2 is characterized in that, these two hybrid chambers are interconnected by these two the 3rd valves.
4. as each described mixed gas plenum system of claim 1 to 3, it is characterized in that, this mixed gas plenum system also comprises at least two reverse checkvalves, and each reverse checkvalve is located between a gas mass flow amount controller and the three-way valve corresponding with this gas mass flow amount controller.
5. sputtering apparatus, it comprises the sputter chamber and is used for the mixed gas plenum system of supply mixed gas in this sputter chamber, this mixed gas plenum system comprises at least two gas sources, at least two gas mass flow amount controllers and at least two first valves, each gas source links to each other successively with one first valve and a gas mass flow amount controller, it is characterized in that, this mixed gas plenum system also comprises at least two three-way valves, a plurality of second valves, two hybrid chambers and two the 3rd valves, each gas mass flow amount controller optionally links to each other with one of one second valve and these two hybrid chambers hybrid chamber successively by a three-way valve, each hybrid chamber is provided with the air outlet, and this air outlet links to each other with this sputter chamber by one the 3rd valve.
6. sputtering apparatus as claimed in claim 5 is characterized in that, this mixed gas plenum system also comprises two off-gas pumps, and each off-gas pump communicates with a hybrid chamber.
7. sputtering apparatus as claimed in claim 6 is characterized in that, these two hybrid chambers link to each other with this sputter chamber after being interconnected by these two the 3rd valves.
8. as each described sputtering apparatus of claim 5 to 7, it is characterized in that, this mixed gas plenum system also comprises at least two reverse checkvalves, and each reverse checkvalve is located between a gas mass flow amount controller and the three-way valve corresponding with this gas mass flow amount controller.
9. jet-plating method comprises:
Sputtering apparatus as claimed in claim 5 and workpiece to be plated are provided;
Under the control of this three-way valve, import various reactant gasess to one of these two hybrid chambers hybrid chamber, mix the mixed gas of winning from these at least two gas sources;
Carry this first mixed gas to this sputter chamber, this workpiece of sputter is imported various reactant gasess from these at least two gas sources to another hybrid chamber of these two hybrid chambers simultaneously under the control of this three-way valve, mix, and gets second mixed gas; And
Carry this second mixed gas to this sputter chamber, this workpiece of sputter.
10. jet-plating method as claimed in claim 9, it is characterized in that, this sputtering apparatus also comprises two off-gas pumps, each off-gas pump communicates with a hybrid chamber, this jet-plating method also is included in when carrying this second mixed gas to this sputter chamber, adopts this off-gas pump to pump this first mixed gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101770049A CN102251220A (en) | 2010-05-19 | 2010-05-19 | Mixed gas supply system, sputtering device and sputtering method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101770049A CN102251220A (en) | 2010-05-19 | 2010-05-19 | Mixed gas supply system, sputtering device and sputtering method |
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| CN102251220A true CN102251220A (en) | 2011-11-23 |
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| CN2010101770049A Pending CN102251220A (en) | 2010-05-19 | 2010-05-19 | Mixed gas supply system, sputtering device and sputtering method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668086A (en) * | 2020-07-14 | 2020-09-15 | 北京北方华创微电子装备有限公司 | Semiconductor device and gas supply control method thereof |
| WO2020211630A1 (en) * | 2019-04-16 | 2020-10-22 | 北京北方华创微电子装备有限公司 | Reaction gas supply system and control method therefor |
| CN114288503A (en) * | 2017-09-13 | 2022-04-08 | 深圳迈瑞生物医疗电子股份有限公司 | Breathing machine |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607718A (en) * | 1983-06-27 | 1985-01-16 | Sharp Corp | Manufacture of amorphous silicon carbide film |
| JPH10148850A (en) * | 1996-11-15 | 1998-06-02 | Agency Of Ind Science & Technol | Production of titanium oxide electrochromic thin film |
| US5833765A (en) * | 1993-09-22 | 1998-11-10 | Flynn; Robert E. | Engine conditioning apparatus and method |
| US6494608B1 (en) * | 1998-02-13 | 2002-12-17 | Renner Du Pont Tintas Automotives E Industriais S/A | System for the continuous and automatic production of automotive and other paints capable of handling a plurality of different paints |
| CN101050518A (en) * | 2006-04-03 | 2007-10-10 | 北京有色金属研究总院 | Method for preparing CeO2 buffer layer on substrate of metal in cube texture |
| JP2008095147A (en) * | 2006-10-12 | 2008-04-24 | Canon Inc | Sputtering film deposition method |
| CN201148461Y (en) * | 2007-07-09 | 2008-11-12 | 吕振华 | Conveying rail capable of changing track as well as solar thermal-collecting tube continuous sputter film-plating machine |
| CN101343726A (en) * | 2007-07-09 | 2009-01-14 | 殷志强 | Solar energy thermal-collecting tube continuous automatic sputtering film coating method and device |
| CN101378003A (en) * | 2007-08-29 | 2009-03-04 | 朗姆研究公司 | Alternate gas delivery and evacuation system for plasma processing apparatuses |
| US20100095890A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc. | Gas supply system, pumping system, coating system, gas supply method, and pumping method |
-
2010
- 2010-05-19 CN CN2010101770049A patent/CN102251220A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607718A (en) * | 1983-06-27 | 1985-01-16 | Sharp Corp | Manufacture of amorphous silicon carbide film |
| US5833765A (en) * | 1993-09-22 | 1998-11-10 | Flynn; Robert E. | Engine conditioning apparatus and method |
| JPH10148850A (en) * | 1996-11-15 | 1998-06-02 | Agency Of Ind Science & Technol | Production of titanium oxide electrochromic thin film |
| US6494608B1 (en) * | 1998-02-13 | 2002-12-17 | Renner Du Pont Tintas Automotives E Industriais S/A | System for the continuous and automatic production of automotive and other paints capable of handling a plurality of different paints |
| CN101050518A (en) * | 2006-04-03 | 2007-10-10 | 北京有色金属研究总院 | Method for preparing CeO2 buffer layer on substrate of metal in cube texture |
| JP2008095147A (en) * | 2006-10-12 | 2008-04-24 | Canon Inc | Sputtering film deposition method |
| CN201148461Y (en) * | 2007-07-09 | 2008-11-12 | 吕振华 | Conveying rail capable of changing track as well as solar thermal-collecting tube continuous sputter film-plating machine |
| CN101343726A (en) * | 2007-07-09 | 2009-01-14 | 殷志强 | Solar energy thermal-collecting tube continuous automatic sputtering film coating method and device |
| CN101378003A (en) * | 2007-08-29 | 2009-03-04 | 朗姆研究公司 | Alternate gas delivery and evacuation system for plasma processing apparatuses |
| US20100095890A1 (en) * | 2008-10-22 | 2010-04-22 | Applied Materials, Inc. | Gas supply system, pumping system, coating system, gas supply method, and pumping method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114288503A (en) * | 2017-09-13 | 2022-04-08 | 深圳迈瑞生物医疗电子股份有限公司 | Breathing machine |
| CN114288503B (en) * | 2017-09-13 | 2023-12-15 | 深圳迈瑞生物医疗电子股份有限公司 | Breathing machine |
| WO2020211630A1 (en) * | 2019-04-16 | 2020-10-22 | 北京北方华创微电子装备有限公司 | Reaction gas supply system and control method therefor |
| US11708636B2 (en) | 2019-04-16 | 2023-07-25 | Beijing Naura Microelectronics Equipment Co., Ltd. | Reaction gas supply system and control method thereof |
| CN111668086A (en) * | 2020-07-14 | 2020-09-15 | 北京北方华创微电子装备有限公司 | Semiconductor device and gas supply control method thereof |
| CN111668086B (en) * | 2020-07-14 | 2023-04-14 | 北京北方华创微电子装备有限公司 | Semiconductor device and gas supply control method thereof |
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Application publication date: 20111123 |