CN102244365A - Laser modulation circuit of continuous wave with frequency modulation - Google Patents
Laser modulation circuit of continuous wave with frequency modulation Download PDFInfo
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- CN102244365A CN102244365A CN2011101422651A CN201110142265A CN102244365A CN 102244365 A CN102244365 A CN 102244365A CN 2011101422651 A CN2011101422651 A CN 2011101422651A CN 201110142265 A CN201110142265 A CN 201110142265A CN 102244365 A CN102244365 A CN 102244365A
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Abstract
The invention relates to a laser modulation circuit of a continuous wave with frequency modulation and belongs to the technical field of lasers. The laser modulation circuit comprises a direct current polarization circuit and a semiconductor laser diode exciting circuit, wherein the direct current polarization circuit comprises capacitors (C1-C10), resistors (R1, R2, R3, R4 and R5), slide resistors (R2 and R6), an operational amplifier LF353 and a summing operational amplifier AD8099; and the semiconductor laser diode exciting circuit comprises resistors (R7, R9, R10, R11 and R12), a slide resistor R8, capacitors (C11-C15), a semiconductor laser diode driving chip T0816 and a semiconductor laser diode (LD). According to the invention, the voltage-current signal conversion and amplification circuit is integrated highly, and the structure is simple; and the output current can be continuously adjustable within a range of not greater than 300mA, a frequency modulation signal excitation laser not greater than 100MHz is realized, and the laser diodes of various wavelengths can be excited.
Description
Technical field
The present invention relates to a kind of Continuous Wave with frequency modulation Laser Modulation circuit, belong to laser technology field.
Background technology
The Continuous Wave with frequency modulation laser fuze is that the relative theory with advantage such as laser high brightness, monochromaticjty, good directionality and frequency modulation range finding combines, and utilizes chirped signal to go the intensity of modulated laser emission laser.When receiving the echo laser signal, there is a fixed frequency difference between the echo chirp signal of intensity modulated and the local oscillation signal by echo time-delay decision, by detecting frequency difference, just can obtain the echo time-delay, and then obtain target range information.
Summary of the invention
The purpose of this invention is to provide a kind of big bandwidth linear frequency modulation laser drive circuit,, propose a kind of Continuous Wave with frequency modulation Laser Modulation circuit as the light source of FM-CW laser ranging system.
The objective of the invention is to be achieved through the following technical solutions.
A kind of Continuous Wave with frequency modulation Laser Modulation circuit of the present invention comprises dc bias circuit and semiconductor laser diode exciting circuit;
Wherein dc bias circuit comprises capacitor C 1, capacitor C 2, capacitor C 3, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7, capacitor C 8, capacitor C 9, capacitor C 10, resistance R 1, resistance R 3, resistance R 4, resistance R 5, slide resistor R2, slide resistor R6, operational amplifier LF353 and sum operational amplifier AD8099; Its annexation is: ground connection behind power supply VCC series resistance R1 and the slide resistor R2; One end of the filter circuit that is composed in parallel by capacitor C 1 and capacitor C 2 links to each other with power supply VCC, and the other end links to each other with ground; The slide plate of slide resistor R2 links to each other with in-phase end 3 pin of operational amplifier LF353, promptly the biasing voltage signal that obtains by slide resistor R2 is input to in-phase end 3 pin of operational amplifier LF353, biasing voltage signal feeds back to end of oppisite phase 2 pin from operational amplifier LF353 output 1 pin again, constitutes voltage follower; 8 pin of operational amplifier LF353 meet power supply VCC, and 4 pin of operational amplifier LF353 meet power supply VEE; One end of the filter circuit that is composed in parallel by capacitor C 3 and capacitor C 4 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 5 and capacitor C 6 links to each other with power supply VEE, and the other end links to each other with ground; Link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the operational amplifier LF353 output 1 pin series resistance R3, link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the linear FM signal Sig_1 series resistance R4; Feed back to end of oppisite phase 2 pin of sum operational amplifier AD8099 behind the output 6 pin series connection slide resistor R6 of sum operational amplifier AD8099, one end of resistance R 5 links to each other the other end ground connection of resistance R 5 with end of oppisite phase 2 pin of slide resistor R6, sum operational amplifier AD8099; One end of the filter circuit that is composed in parallel by capacitor C 7 and capacitor C 8 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 9 and capacitor C 10 links to each other with power supply VEE, and the other end links to each other with ground; The output 6 pin output modulation signal Sig_2 of sum operational amplifier AD8099;
Above-mentioned resistance R 1 plays dividing potential drop; Obtain suitable bias voltage by the value of regulating slide resistor R2;
The above-mentioned multiplication factor that can change the summation operation amplifying circuit by adjusting slide resistor R6;
The filter circuit that filter circuit that the filter circuit that the filter circuit that the filter circuit that above-mentioned capacitor C 1 and capacitor C 2 compose in parallel, capacitor C 3 and capacitor C 4 compose in parallel, capacitor C 5 and capacitor C 6 compose in parallel, capacitor C 7 and capacitor C 8 compose in parallel and capacitor C 9 and capacitor C 10 compose in parallel is the high frequency noise in the filter out power and crosstalking effectively; Voltage follower has input impedance height, the low characteristics of output impedance, is used as buffer stage and isolation level in system.
Wherein the semiconductor laser diode exciting circuit comprises resistance R 7, resistance R 9, resistance R 10, resistance R 11, resistance R 12, slide resistor R8, capacitor C 11, capacitor C 12, capacitor C 13, capacitor C 14, semiconductor laser diode chip for driving T0816 and semiconductor laser diode LD; Its annexation is: the modulation signal Sig_2 of output 6 pin of sum operational amplifier AD8099 output is input to input 2 pin of the Channel2 of semiconductor laser diode chip for driving T0816 in the dc bias circuit; 1 pin of the Read channel of semiconductor laser diode chip for driving T0816 with receive VCC after resistance R 7 and slide resistor R8 are connected; Resistance R 9, resistance R 10, resistance R 11, resistance R 12 connect 4 pin, 5 pin, 12 pin, 10 pin of semiconductor laser diode chip for driving T0816 respectively; 3 pin of semiconductor laser diode chip for driving T0816,6 pin, 7 pin and 13 pin ground connection; 8 pin of semiconductor laser diode chip for driving T0816,9 pin, 11 pin, 15 pin and 16 pin link to each other with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 11 and capacitor C 12 links to each other other end ground connection with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 13 and capacitor C 14 links to each other other end ground connection with power supply VCC; The electric current of exporting from 14 pin of semiconductor laser diode chip for driving T0816 is input to semiconductor laser diode LD, and the exciting laser diode produces the laser that intensity is subjected to the linear FM signal modulation; Select the different wavelength of laser diode, exportable different wavelength of laser;
Above-mentioned semiconductor laser diode exciting circuit adopts the directly mode of modulation, directly changes the drive current of semiconductor laser diode with linear FM signal, thereby the laser intensity of output is modulated;
Above-mentioned semiconductor laser diode chip for driving T0816 can be used as Current Control output current source, has RF oscillator on triple channel input and the sheet; Three input channel correspondences three kinds of luminous powers, and Read channel can produce continuous output as read channel, and Channel2, Channel3 have high switching rate as write access, and all passages are exported in 14 pin additions; Can realize Voltage-controlled Current Source by outer meeting resistance;
The input current of the Channel2 of above-mentioned semiconductor laser diode chip for driving T0816 is less than 1mA;
Above-mentioned resistance R 7 plays current limliting; Can change the size of Read channel input current by the value of regulating slide resistor R8;
The filter circuit that filter circuit that above-mentioned capacitor C 11 and capacitor C 12 compose in parallel and capacitor C 13 and capacitor C 14 compose in parallel is the high frequency noise in the filter out power and crosstalking effectively; Voltage follower has input impedance height, the low characteristics of output impedance, is used as buffer stage and isolation level in system.
Beneficial effect
The present invention is integrated, simple in structure with voltage-to-current conversion of signals and amplifying circuit height; Output current is adjustable continuously in being not more than the scope of 300mA, realizes being not more than the FM signal excitation laser of 100MHz, the laser diode that can encourage the multi-wavelength.
Description of drawings
Fig. 1 is the dc bias circuit schematic diagram;
Fig. 2 is a semiconductor laser diode exciting circuit schematic diagram.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples.
Embodiment
A kind of Continuous Wave with frequency modulation Laser Modulation circuit comprises dc bias circuit and semiconductor laser diode exciting circuit;
Wherein dc bias circuit as shown in Figure 1, comprises capacitor C 1, C2, C3, C4, C5, C6, C7, C8, C9, C10, resistance R 1, R3, R4, R5, slide resistor R2, R6, operational amplifier LF353 and sum operational amplifier AD8099; Its annexation is: ground connection behind power supply VCC series resistance R1 and the slide resistor R2; One end of the filter circuit that is composed in parallel by capacitor C 1 and C2 links to each other with power supply VCC, and the other end links to each other with ground; The slide plate of slide resistor R2 links to each other with in-phase end 3 pin of operational amplifier LF353, promptly the biasing voltage signal that obtains by slide resistor R2 is input to in-phase end 3 pin of operational amplifier LF353, biasing voltage signal feeds back to end of oppisite phase 2 pin from operational amplifier LF353 output 1 pin again, constitutes voltage follower; 8 pin of operational amplifier LF353 meet power supply VCC, and 4 pin of operational amplifier meet power supply VEE; One end of the filter circuit that is composed in parallel by capacitor C 3 and C4 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 5 and C6 links to each other with power supply VEE, and the other end links to each other with ground; Link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the operational amplifier LF353 output 1 pin series resistance R3, link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the linear FM signal Sig_1 series resistance R4; Feed back to end of oppisite phase 2 pin of sum operational amplifier AD8099 behind the output 6 pin series connection slide resistor R6 of sum operational amplifier AD8099, one end of resistance R 5 links to each other the other end ground connection of resistance R 5 with end of oppisite phase 2 pin of slide resistor R6, sum operational amplifier AD8099; One end of the filter circuit that is composed in parallel by capacitor C 7 and C8 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 9 and C10 links to each other with power supply VEE, and the other end links to each other with ground; The output 6 pin output modulation signal Sig_2 of sum operational amplifier AD8099;
Above-mentioned resistance R 1 plays dividing potential drop; Obtain suitable bias voltage by the value of regulating slide resistor R2;
The above-mentioned multiplication factor that can change the summation operation amplifying circuit by adjusting slide resistor R6;
The filter circuit that filter circuit that the filter circuit that the filter circuit that the filter circuit that above-mentioned capacitor C 1 and C2 compose in parallel, capacitor C 3 and C4 compose in parallel, capacitor C 5 and C6 compose in parallel, capacitor C 7 and C8 compose in parallel and capacitor C 9 and C10 compose in parallel is the high frequency noise in the filter out power and crosstalking effectively; Voltage follower has input impedance height, the low characteristics of output impedance, is used as buffer stage and isolation level in system.
Wherein the semiconductor laser diode exciting circuit comprises resistance R 7, R9, R10, R11, R12, slide resistor R8, capacitor C 11, C12, C13, C14, semiconductor laser diode chip for driving T0816 and semiconductor laser diode LD; Its annexation is: the modulation signal Sig_2 of output 6 pin of sum operational amplifier AD8099 output is input to input 2 pin of the Channel2 of semiconductor laser diode chip for driving T0816 in the dc bias circuit; 1 pin of the Read channel of semiconductor laser diode chip for driving T0816 with receive VCC after resistance R 7 and slide resistor R8 are connected; Resistance R 9, R10, R11, R12 connect 4 pin, 5 pin, 12 pin, 10 pin of semiconductor laser diode chip for driving T0816 respectively; 3 pin of semiconductor laser diode chip for driving T0816,6 pin, 7 pin and 13 pin ground connection; 8 pin of semiconductor laser diode chip for driving T0816,9 pin, 11 pin, 15 pin and 16 pin link to each other with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 11 and C12 links to each other other end ground connection with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 13 and C14 links to each other other end ground connection with power supply VCC; The electric current of exporting from 14 pin of semiconductor laser diode chip for driving T0816 is input to semiconductor laser diode LD, and the exciting laser diode produces the laser that intensity is subjected to the linear FM signal modulation; Select the different wavelength of laser diode, exportable different wavelength of laser;
Above-mentioned semiconductor laser diode exciting circuit adopts the directly mode of modulation, directly changes the drive current of semiconductor laser diode with linear FM signal, thereby the laser intensity of output is modulated;
Above-mentioned semiconductor laser diode chip for driving T0816 can be used as Current Control output current source, has RF oscillator on triple channel input and the sheet; Three input channel correspondences three kinds of luminous powers, and Read channel can produce continuous output as read channel, and Channel2, Channel3 have high switching rate as write access, and all passages are exported in 14 pin additions; Can realize Voltage-controlled Current Source by outer meeting resistance;
Above-mentioned resistance R 7 plays current limliting; Can change the size of Read channel input current by the value of regulating slide resistor R8;
The filter circuit that filter circuit that above-mentioned capacitor C 11 and C12 compose in parallel and capacitor C 13 and C14 compose in parallel is the high frequency noise in the filter out power and crosstalking effectively; Voltage follower has input impedance height, the low characteristics of output impedance, is used as buffer stage and isolation level in system.
Above-mentioned power supply VCC is+5V that power supply VEE is-5V;
Above-mentioned operational amplifier is LF353;
Above-mentioned sum operational amplifier is for adopting the AD8099 of ADI company, and it is a high performance current feedback type operational amplifier, has the characteristics of high speed, low-power consumption, low noise, low distortion, and gain is 2 o'clock, its-three dB bandwidth is up to 700MHz;
Above-mentioned semiconductor laser diode chip for driving is the special-purpose laser diode chip for driving of DVD, the CD T0816 that atmel corp produces, and the T0816 output current reaches more than the laser diode threshold current of selecting for use;
The value of above-mentioned resistance R 1 is 1K Ω, and the value of R2 is 3K Ω, and the value of R3 is 50 Ω, and the value of R4 is 50 Ω, the value of R5 is 1K Ω, and the value of R6 is 2K Ω, and the value of R7 is 3K Ω, and the value of R8 is 7.5K Ω, the value of R9 is 1K Ω, and the value of R10 is 1K Ω, and the value of R11 is 1K Ω, and the value of R12 is 1K Ω;
The value of above-mentioned capacitor C 1 is 10 μ F, and the value of C2 is 0.1 μ F, and the value of C3 is 10 μ F, and the value of C4 is 0.1 μ F, and the value of C5 is 10 μ F, and the value of C6 is 0.1 μ F, and the value of C7 is 10 μ F, and the value of C8 is 0.1 μ F, and the value of C9 is 10 μ F, and the value of C10 is 0.1 μ F; The value of C11 is 10 μ F, and the value of C12 is 0.1 μ F, and the value of C13 is 10 μ F, and the value of C14 is 0.1 μ F;
Above-mentioned Read channel passage can be exported the electric current of 250mA, and Channel2, Channel3 write access can be exported the electric current of 250mA, and the total output current of three can reach 300mA;
The input current of the Channel2 of above-mentioned semiconductor laser diode chip for driving is less than 1mA; Its input impedance is 1250 Ω, by regulating the potentiometer R2 in the dc bias circuit, makes bias voltage less than 1V.
Because laser diode can not be worked under negative voltage, and must satisfy operating current greater than the bright dipping of threshold current ability, the effect of dc bias circuit is the signal of input is lifted to the value that semiconductor laser diode can bright dipping, the signal that the semiconductor laser diode exciting circuit plays input carries out linear modulation, and the driving laser diode produces the laser that intensity is subjected to the linear FM signal modulation.
Claims (3)
1. a Continuous Wave with frequency modulation Laser Modulation circuit is characterized in that: comprise dc bias circuit and semiconductor laser diode exciting circuit;
Wherein dc bias circuit comprises capacitor C 1, capacitor C 2, capacitor C 3, capacitor C 4, capacitor C 5, capacitor C 6, capacitor C 7, capacitor C 8, capacitor C 9, capacitor C 10, resistance R 1, resistance R 3, resistance R 4, resistance R 5, slide resistor R2, slide resistor R6, operational amplifier LF353 and sum operational amplifier AD8099; Its annexation is: ground connection behind power supply VCC series resistance R1 and the slide resistor R2; One end of the filter circuit that is composed in parallel by capacitor C 1 and capacitor C 2 links to each other with power supply VCC, and the other end links to each other with ground; The slide plate of slide resistor R2 links to each other with in-phase end 3 pin of operational amplifier LF353, promptly the biasing voltage signal that obtains by slide resistor R2 is input to in-phase end 3 pin of operational amplifier LF353, biasing voltage signal feeds back to end of oppisite phase 2 pin from operational amplifier LF353 output 1 pin again, constitutes voltage follower; 8 pin of operational amplifier LF353 meet power supply VCC, and 4 pin of operational amplifier LF353 meet power supply VEE; One end of the filter circuit that is composed in parallel by capacitor C 3 and capacitor C 4 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 5 and capacitor C 6 links to each other with power supply VEE, and the other end links to each other with ground; Link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the operational amplifier LF353 output 1 pin series resistance R3, link to each other with in-phase end 3 pin of sum operational amplifier AD8099 behind the linear FM signal Sig_1 series resistance R4; Feed back to end of oppisite phase 2 pin of sum operational amplifier AD8099 behind the output 6 pin series connection slide resistor R6 of sum operational amplifier AD8099, one end of resistance R 5 links to each other the other end ground connection of resistance R 5 with end of oppisite phase 2 pin of slide resistor R6, sum operational amplifier AD8099; One end of the filter circuit that is composed in parallel by capacitor C 7 and capacitor C 8 links to each other with power supply VCC, and the other end links to each other with ground; One end of the filter circuit that is composed in parallel by capacitor C 9 and capacitor C 10 links to each other with power supply VEE, and the other end links to each other with ground; The output 6 pin output modulation signal Sig_2 of sum operational amplifier AD8099;
Wherein the semiconductor laser diode exciting circuit comprises resistance R 7, resistance R 9, resistance R 10, resistance R 11, resistance R 12, slide resistor R8, capacitor C 11, capacitor C 12, capacitor C 13, capacitor C 14, semiconductor laser diode chip for driving T0816 and semiconductor laser diode LD; Its annexation is: the modulation signal Sig 2 of output 6 pin of sum operational amplifier AD8099 output is input to input 2 pin of the Channel2 of semiconductor laser diode chip for driving T0816 in the dc bias circuit; 1 pin of the Read channel of semiconductor laser diode chip for driving T0816 with receive VCC after resistance R 7 and slide resistor R8 are connected; Resistance R 9, resistance R 10, resistance R 11, resistance R 12 connect 4 pin, 5 pin, 12 pin, 10 pin of semiconductor laser diode chip for driving T0816 respectively; 3 pin of semiconductor laser diode chip for driving T0816,6 pin, 7 pin and 13 pin ground connection; 8 pin of semiconductor laser diode chip for driving T0816,9 pin, 11 pin, 15 pin and 16 pin link to each other with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 11 and capacitor C 12 links to each other other end ground connection with power supply VCC; One end of the filter circuit that is composed in parallel by capacitor C 13 and capacitor C 14 links to each other other end ground connection with power supply VCC; The electric current of exporting from 14 pin of semiconductor laser diode chip for driving T0816 is input to semiconductor laser diode LD, and the exciting laser diode produces the laser that intensity is subjected to the linear FM signal modulation; Select the different wavelength of laser diode, the output different wavelength of laser;
Above-mentioned semiconductor laser diode exciting circuit adopts the directly mode of modulation, directly changes the drive current of semiconductor laser diode with linear FM signal, thereby the laser intensity of output is modulated.
2. a kind of Continuous Wave with frequency modulation Laser Modulation circuit according to claim 1 is characterized in that: semiconductor laser diode chip for driving T0816 has RF oscillator on triple channel input and the sheet as Current Control output current source; Three input channel correspondences three kinds of luminous powers, and Read channel can produce continuous output as read channel, and Channel2, Channel3 have high switching rate as write access, and all passages are exported in 14 pin additions; Realize Voltage-controlled Current Source by outer meeting resistance.
3. a kind of Continuous Wave with frequency modulation Laser Modulation circuit according to claim 1, it is characterized in that: the input current of the Channel2 of semiconductor laser diode chip for driving T0816 is less than 1mA.
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| CN 201110142265 CN102244365B (en) | 2011-05-30 | 2011-05-30 | Laser modulation circuit of continuous wave with frequency modulation |
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| CN 201110142265 CN102244365B (en) | 2011-05-30 | 2011-05-30 | Laser modulation circuit of continuous wave with frequency modulation |
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| CN102244365B CN102244365B (en) | 2012-12-26 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102709809A (en) * | 2012-04-25 | 2012-10-03 | 北京航空航天大学 | Optical fiber gyroscope semiconductor modulating circuit based on single operational amplifier |
| CN105739031A (en) * | 2016-04-19 | 2016-07-06 | 武汉电信器件有限公司 | COB-based surface-mount laser diode interface matching apparatus |
| CN106019258A (en) * | 2016-05-12 | 2016-10-12 | 常州大地测绘科技有限公司 | Laser emission driving circuit for phase-based laser rangefinders |
| CN113676180A (en) * | 2021-08-25 | 2021-11-19 | 温州大学激光与光电智能制造研究院 | Resonance type micro-cantilever sensor intelligent exciting circuit based on DDS and vibration pickup signal amplifying circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709809A (en) * | 2012-04-25 | 2012-10-03 | 北京航空航天大学 | Optical fiber gyroscope semiconductor modulating circuit based on single operational amplifier |
| CN105739031A (en) * | 2016-04-19 | 2016-07-06 | 武汉电信器件有限公司 | COB-based surface-mount laser diode interface matching apparatus |
| CN105739031B (en) * | 2016-04-19 | 2017-11-03 | 武汉电信器件有限公司 | The laser diode Interface Matching device mounted based on COB |
| US10700488B2 (en) | 2016-04-19 | 2020-06-30 | Wuhan Telecommunication Devices Co., Ltd. | COB bonding laser diode interface mating device |
| CN106019258A (en) * | 2016-05-12 | 2016-10-12 | 常州大地测绘科技有限公司 | Laser emission driving circuit for phase-based laser rangefinders |
| CN106019258B (en) * | 2016-05-12 | 2018-04-20 | 常州大地测绘科技有限公司 | Phase laser distance measurement instrument Laser emission drive circuit |
| CN113676180A (en) * | 2021-08-25 | 2021-11-19 | 温州大学激光与光电智能制造研究院 | Resonance type micro-cantilever sensor intelligent exciting circuit based on DDS and vibration pickup signal amplifying circuit |
| CN113676180B (en) * | 2021-08-25 | 2023-08-29 | 温州大学激光与光电智能制造研究院 | DDS-based intelligent excitation circuit and vibration pickup signal amplification circuit of resonant micro-cantilever sensor |
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| CN102244365B (en) | 2012-12-26 |
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