CN102238766A - General high-efficiency long-life driving circuit for wide voltage non-inductance semiconductor illumination - Google Patents
General high-efficiency long-life driving circuit for wide voltage non-inductance semiconductor illumination Download PDFInfo
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- CN102238766A CN102238766A CN2010101532765A CN201010153276A CN102238766A CN 102238766 A CN102238766 A CN 102238766A CN 2010101532765 A CN2010101532765 A CN 2010101532765A CN 201010153276 A CN201010153276 A CN 201010153276A CN 102238766 A CN102238766 A CN 102238766A
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Abstract
The invention relates to a semiconductor illuminating lamp, in particular to a general high-efficiency long-life driving circuit for wide voltage non-inductance semiconductor illumination. According to the driving circuit disclosed by the invention, the traditional switching power supply and complex circuit topology of a PWM (Pulse Width Modulation) control mode are thoroughly changed, an output capacitor is charged and a load is powered by adopting directly-rectified commercial power, and the charging state of the output capacitor is controlled by utilizing the on-off of a field effect transistor; the on-off of the field effect transistor is controlled by a current flowing through the load so that the stability of an output current is ensured; a current of an LED (Light Emitting Diode) can be effectively controlled in an appropriate range so that the LED is prevented from being burned-out due to lightning effects of power transmission lines and affects of surge currents in switching on/off; and the driving circuit can be manufactured into a standard module, is suitable for large-scale industrialized production and has the advantages that the circuit design is ingenious, the whole circuit is very concise, the cost is low, no large-capacity capacitor is needed, the current stability is high, and the whole life is greatly prolonged, which can be close to the theoretical life about one hundred thousand hours of a semiconductor.
Description
Technical field
The present invention relates to a kind of semi-conductor lighting lamp, the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of especially a kind of wide voltage.
Background technology
At present, known LED illumination driving circuit weight is big, volume is big, circuit is complicated, versatility is poor, and efficient is low, and cost is too high, is unfavorable for the large-scale industrial production of LED illumination; And be subject to the influence of lightning induction and surge current, wide inadequately to the voltage adaptation scope, the necessary capacitor that uses larger capacity has stronger extra-pulse electromagnetic interference.
Summary of the invention
For the input and output voltage narrow range that overcomes existing switch voltage-stabilizing circuit complex structure, cost height, volume is big, weight is big, working condition requirement height, versatility are poor, suitable, very strong shortcomings such as impulse disturbances are arranged, the invention provides a kind of full resolution element, low cost, high efficiency, small size, extremely succinctly, the production debugging difficulty is low, the semiconductor lighting constant-current drive circuit solution that can be common to purposes such as various semiconductor lamp driving powers.
The technical solution adopted for the present invention to solve the technical problems is: the complicated circuit topology that thoroughly changes existing Switching Power Supply and PWM control mode, adopt civil power after direct rectification, output capacitor to be charged and to electric, utilize the break-make of field effect transistor to control charged state simultaneously to output capacitance, the break-make of described field effect transistor is controlled by the electric current of the load of flowing through, thereby guarantees the stability of output current.
Specifically technical measures as shown in Figure 1: an end of a termination rectification input of civil power, the other end of another termination civil power of described rectification input, the upper end of described rectification output plus terminal connecting resistance R1 and the D of field effect transistor VT end, the anode of the S termination capacitor C of described field effect transistor, the upper end of the left end of resistance R 2 and resistance R 3, the lower end of the described resistance R 1 of G termination of described field effect transistor and the c of switch triode Q1 end, e termination rectification output negative terminal and the output capacitor negative terminal of described switch triode Q1, resistance R 5 lower ends, resistance R 6 lower ends, the negative terminal of semiconductor light-emitting elements string is as zero potential point; Resistance R 4 becomes the partial pressure type total radio amplifier with described resistance R 3, R5, R6, cascode triode Q2 mutual group, the c end of wherein said triode Q2 is connected with the upper end of described resistance R 5, the negative terminal of voltage stabilizing didoe, the b end of the described switch triode Q1 of the positive termination of described voltage stabilizing didoe; The lower end of the described resistance R 3 of e termination of described triode Q2, the b end of described triode Q2 is connected with described resistance R 4 lower ends, R6 upper end, and the upper end of described resistance R 4 is connected with the anode of described resistance R 2 right-hand members, semiconductor light-emitting elements string.
Because ingenious succinct described resistance R 2 both had been connected in the semiconductor light-emitting elements circuit, also in the base stage and emitter circuit of Chuan Lian described cascode amplifying triode Q2, when the electric current in the semiconductor light-emitting elements changes, corresponding variation takes place in the base voltage of described cascode amplifying triode Q2 thereupon, voltage after the amplification is delivered to the base stage of described switch triode Q1 by voltage stabilizing didoe, by suitable setting to the working point of described amplifying circuit, can guarantee when load (semiconductor light-emitting elements string) electric current during greater than set point, amplifying output voltage just in time makes described voltage stabilizing didoe puncture conducting, thereby make described switching tube Q1 saturation conduction, described switching tube VT ends, the rectification output current is no longer to output capacitance and electric, only depend on electric capacity to electric, voltage progressively descends, when electric current is lower than set point in load, voltage stabilizing didoe ends, described switching tube is to the output capacitance charging and to electric, above process constantly repeats automatically, guarantees that output current is in a stable scope.
The beneficial effect of patent of the present invention is: whole design of drive circuit is ingenious, succinct, need not large value capacitor, need not inductance element, volume is little, in light weight, cost is low, and the current stability, height has been avoided the flicker of light, prolonged the drive circuit bulk life time greatly, can be near 100,000 hours; And the influence of the surge current in the time of effectively avoiding LED because of the lightning induction of transmission line and switch is burnt out, and frequent switch had no effect to the life-span of light fixture; When the civil power of drive circuit in the voltage range of non-constant width imported simultaneously,, and has same high efficiency as long as input voltage is higher than output voltage and just can guarantees very stable output current; Because fully without inductive element, the drive circuit power factor is high, volume and weight is minimum, unlike present widely used switch driving circuit, produce distinctive additional high high-voltage pulse, reduced the element electric stress, reduced electromagnetic interference greatly, improved efficient, prolonged the life-span.Amplify controlling Design because of taking a sample ingenious succinct, the stable output current value of this drive circuit can arbitrarily be set, therefore utmost point versatility is widely arranged, semiconductor lighting drive circuit applicable to any kind, can directly adopt this circuit to make modular circuit, integrated circuit, be fit to large-scale industrial production.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the circuit structure diagram of patent of the present invention.
Fig. 2 is the specific embodiment schematic diagram of patent of the present invention.
Embodiment
Specific embodiment as shown in Figure 2.Capacitor C=1--300 microfarad all can, withstand voltage 25 volts, resistance R 1=560K ohm, resistance R 2=0.47 ohm, resistance R 3=150 ohm, resistance R 4=4.7K ohm, resistance R 5=6K ohm, resistance R 6=62K ohm, triode Q1 8050 types, triode Q2 8550 types, switching tube VT can adopt field effect transistor IPR730 type.
Triode in the present embodiment also can be selected the triode of other NPN types or positive-negative-positive for use, and the field effect transistor of other models.
Claims (6)
1. general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of wide voltage, it is characterized in that thoroughly having changed the complicated circuit topology of existing Switching Power Supply and PWM control mode, adopt civil power after direct rectification, output capacitor to be charged and simultaneously to electric, and the break-make of utilizing switching tube (VT in the accompanying drawing) is controlled the charged state to output capacitance, the break-make of described switching tube is controlled by the electric current of the load of flowing through, thereby guarantees the stability of output current.
2. the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of a kind of wide voltage according to claim 1, it is characterized in that rectification circuit connects with the LED loop, and adopt the switching tube (VT in the accompanying drawing) and the led circuit of one or many LED connection in series-parallel composition to be in series, utilize the break-make of described switching tube to control the charging and discharging state of output capacitance, the break-make of described switching tube is controlled by the electric current of the load of flowing through, thereby guarantees the stability of output current.
3. the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of a kind of wide voltage according to claim 1, it is characterized in that adopting simple and easy partial pressure type total radio amplifier that the voltage on the sample resistance that is series at the LED loop is amplified, described total radio amplifier output is connected to switching tube (Q1 in the accompanying drawing) through the voltage stabilizing didoe of a series connection, output switching signal, be used to control the on off state of described switching tube, circuit is very succinct, drive circuit output stabling current can arbitrarily be set, versatility is extremely strong, applicable to the semiconductor lighting constant-current drive circuit as any kind.
4. the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of a kind of wide voltage according to claim 1, it is characterized in that fully without inductance element, thereby efficient is high, power factor is high, volume and weight all reduces greatly, and do not produce the existing distinctive additional high-pressure pulse of switch driving circuit, reduce electromagnetic pollution and element electric stress, prolonged the semiconductor lamp bulk life time greatly.
5. the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of a kind of wide voltage according to claim 1, it is characterized in that load is directly in parallel with output capacitor, rectification output is by charging to output capacitance to electric the time after the control of switching tube, both utilized output capacitance that input high pressure and the instantaneous high pressure that may occur are absorbed, simultaneously guaranteed that also the output capacitance both end voltage can be too not high, thereby can adopt low withstand voltage capacitor, avoid the harmful effect of the instantaneous high pressure that produces because of a variety of causes such as thunders and lightnings again to semiconductor luminotron, therefore both having simplified circuit has reduced drive circuit volume and cost, has prolonged the bulk life time of semiconductor lamp again greatly.
6. the general high-efficiency long-life drive circuit of the noninductive semiconductor lighting of a kind of wide voltage according to claim 1, it is characterized in that the modular circuit and the integrated circuit that adopt this circuit to make high-efficiency long-life, peripheral cell is few, volume weight is minimum, its suitable input voltage can be any line voltage greater than output voltage, its power supply scope of application is the wideest in the present drive circuit, its constant current output current value can arbitrarily be set as required easily simultaneously, can be common to the constant-current drive circuit as any kind semiconductor lighting; Be fit to large-scale industrial production.
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Cited By (10)
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CN102523654A (en) * | 2011-12-20 | 2012-06-27 | 凹凸电子(武汉)有限公司 | Drive circuit of LED light source, control circuit thereof and control method thereof |
CN102612225A (en) * | 2012-03-06 | 2012-07-25 | 广州金升阳科技有限公司 | Power circuit capable of being used for LED drive |
CN102625544A (en) * | 2012-04-13 | 2012-08-01 | 余塘 | Low-cost high-performance light-emitting diode (LED) constant current driving circuit |
CN102802306A (en) * | 2012-07-31 | 2012-11-28 | 圣邦微电子(北京)股份有限公司 | Driving circuit and driving control method of light-emitting diode |
CN103268131A (en) * | 2012-11-26 | 2013-08-28 | 陈景忠 | Small-volume wide-voltage photoelectric high-voltage driving module |
CN104754802A (en) * | 2013-12-30 | 2015-07-01 | 欧普照明股份有限公司 | LED module surge current control device |
CN105634274A (en) * | 2016-03-17 | 2016-06-01 | 云南伏施特科技有限公司 | Input voltage broadening circuit of photovoltaic pumping frequency converter switch power supply |
CN105873314A (en) * | 2015-11-23 | 2016-08-17 | 陈小良 | Lighting circuit of LED lamp |
CN109587880A (en) * | 2018-12-18 | 2019-04-05 | 陕西亚成微电子股份有限公司 | A kind of controllable silicon light modulation LED driving method and circuit |
CN113394820A (en) * | 2021-07-14 | 2021-09-14 | 国网甘肃省电力公司电力科学研究院 | Optimized scheduling method for new energy grid-connected power system |
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JP2007124770A (en) * | 2005-10-27 | 2007-05-17 | Renesas Technology Corp | Semiconductor integrated circuit device and noncontact electronic device using same |
CN101227778A (en) * | 2008-02-19 | 2008-07-23 | 东南大学 | Self-excited oscillation type high power LED constant-current driving circuit |
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JP2007124770A (en) * | 2005-10-27 | 2007-05-17 | Renesas Technology Corp | Semiconductor integrated circuit device and noncontact electronic device using same |
CN101227778A (en) * | 2008-02-19 | 2008-07-23 | 东南大学 | Self-excited oscillation type high power LED constant-current driving circuit |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102523654A (en) * | 2011-12-20 | 2012-06-27 | 凹凸电子(武汉)有限公司 | Drive circuit of LED light source, control circuit thereof and control method thereof |
US8598792B2 (en) | 2011-12-20 | 2013-12-03 | O2Micro Inc. | Driving circuit for powering LED light sources |
CN102523654B (en) * | 2011-12-20 | 2014-04-02 | 凹凸电子(武汉)有限公司 | Drive circuit of LED light source, control circuit thereof and control method thereof |
TWI507081B (en) * | 2011-12-20 | 2015-11-01 | O2Micro Int Ltd | Driving circuit and control circuit for powering light source |
CN102612225A (en) * | 2012-03-06 | 2012-07-25 | 广州金升阳科技有限公司 | Power circuit capable of being used for LED drive |
CN102612225B (en) * | 2012-03-06 | 2014-09-03 | 广州金升阳科技有限公司 | Power circuit capable of being used for LED drive |
CN102625544B (en) * | 2012-04-13 | 2015-07-22 | 余塘 | Low-cost high-performance light-emitting diode (LED) constant current driving circuit |
CN102625544A (en) * | 2012-04-13 | 2012-08-01 | 余塘 | Low-cost high-performance light-emitting diode (LED) constant current driving circuit |
CN102802306A (en) * | 2012-07-31 | 2012-11-28 | 圣邦微电子(北京)股份有限公司 | Driving circuit and driving control method of light-emitting diode |
CN102802306B (en) * | 2012-07-31 | 2014-11-26 | 圣邦微电子(北京)股份有限公司 | Driving circuit and driving control method of light-emitting diode |
CN103268131A (en) * | 2012-11-26 | 2013-08-28 | 陈景忠 | Small-volume wide-voltage photoelectric high-voltage driving module |
CN103268131B (en) * | 2012-11-26 | 2016-10-12 | 扬州工业职业技术学院 | Small size wide-voltage photoelectric high drive module |
CN104754802A (en) * | 2013-12-30 | 2015-07-01 | 欧普照明股份有限公司 | LED module surge current control device |
CN105873314A (en) * | 2015-11-23 | 2016-08-17 | 陈小良 | Lighting circuit of LED lamp |
CN105634274A (en) * | 2016-03-17 | 2016-06-01 | 云南伏施特科技有限公司 | Input voltage broadening circuit of photovoltaic pumping frequency converter switch power supply |
CN109587880A (en) * | 2018-12-18 | 2019-04-05 | 陕西亚成微电子股份有限公司 | A kind of controllable silicon light modulation LED driving method and circuit |
CN109587880B (en) * | 2018-12-18 | 2024-02-20 | 陕西亚成微电子股份有限公司 | Driving method and circuit for silicon controlled rectifier dimming LED |
CN113394820A (en) * | 2021-07-14 | 2021-09-14 | 国网甘肃省电力公司电力科学研究院 | Optimized scheduling method for new energy grid-connected power system |
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Application publication date: 20111109 |