CN102237451B - Method for improving topography and electrical properties of ZnO (zinc oxide) thin film - Google Patents
Method for improving topography and electrical properties of ZnO (zinc oxide) thin film Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title abstract description 97
- 239000011787 zinc oxide Substances 0.000 title abstract description 48
- 238000012876 topography Methods 0.000 title abstract description 19
- 229910052738 indium Inorganic materials 0.000 claims abstract description 45
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011701 zinc Substances 0.000 claims abstract description 21
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000004246 zinc acetate Substances 0.000 claims abstract description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229960000583 acetic acid Drugs 0.000 claims abstract description 11
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 92
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 10
- 238000003764 ultrasonic spray pyrolysis Methods 0.000 abstract description 2
- 239000002243 precursor Substances 0.000 abstract 2
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- LGHOYKSQIQISBI-UHFFFAOYSA-N acetic acid;indium Chemical compound [In].CC(O)=O LGHOYKSQIQISBI-UHFFFAOYSA-N 0.000 abstract 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 abstract 1
- 239000013077 target material Substances 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 11
- 239000012528 membrane Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a method for improving topography and electrical properties of a ZnO (zinc oxide) thin film. The method comprises the following steps: 1) by taking zinc acetate as a Zn source, acetic acid indium as a doped indium source and a mixed liquor of water and absolute ethyl alcohol as a solvent, adding the zinc acetate to the solvent to obtain a precursor mixed liquor, adding glacial acetic acid to the precursor mixed liquor, and by taking airs as a carrier gas, preparing an indium-doped ZnO thin film with a triangle topography on a glass substrate by using an ultrasonic spray pyrolysis method; and 2) by taking aluminum-zinc alloy as target materials, preparing an aluminum-doped ZnO thin film on the indium-doped ZnO thin film by using a magnetron sputtering method. The method has the advantages that the prepared indium-doped ZnO thin film or the aluminum-doped ZnO thin film is of a conical textured topography without edges and sharp peaks, thus having stronger scattering effect on incident lights; and meanwhile, the ZnO thin film prepared by the sputtering technique has the characteristic of low resistivity, so the conductive properties of the ZnO thin film can be obviously improved.
Description
[technical field]
The invention belongs to technical field of solar cells, particularly a kind of method of improving ZnO film pattern and electrology characteristic.
[background technology]
Transparent conductive oxide film (TCO) is the requisite electrode material of thin film solar cell.TCO with matte pattern constitutes to have the important foundation of sunken light (light trapping) structure silicon-film solar-cell.The introducing of light trapping structure can increase the light path of incident light, strengthens the absorption of battery to light, and is particularly important to improving device performance.In recent years, because SnO
2Film has good electricity and optical characteristics, is widely used as the nesa coating of solar cell.Yet; This material causes its optical characteristics to worsen owing to Sn is reduced under the hydrogen plasma atmosphere environment; Limited its application in thin film solar cell as transparent conductive film; Microcrystalline silicon solar cell particularly, and ZnO film not only can have high stability in the hydrogen plasma environment, and can realize good photoelectric characteristic (low-resistivity, suede structure; High permeability) film growth, thus the transparent conductive film that has competitiveness in the thin film solar cell become.Therefore preparing the ZnO-TCO with matte pattern is the target that people pursue.
The method that preparation at present has matte pattern ZnO-TCO mainly contains sputter post-etching and metal-organic chemical vapor deposition equipment (MOCVD).Wherein utilize magnetron sputtering method to prepare the ZnO thin film doped low resistivity (5 * 10 that obtains of Al
-4Ω cm); And then adopt that watery hydrochloric acid (HCl) is corrodible to go out cratering matte pattern (referring to J.M ü ller; B.Rech, J.Springer, M.Vanecek.TCO and light trapping in silicon thin film solar cells.Solar Energy; 2004,77:917-930).But owing to need follow-up chemical corrosion, when large tracts of land corrosion ZnO film forms suede structure, having high risk is an one of which existing problem (corrosion rear film thickness reduces) with causing waste of material.But MOCVD technology direct growth goes out to have the ZnO film of pyramid-like structure (referring to Sylvie
Steinhauser; Nuno Oliveira, et al.Opto-electronic properties of rough LP-CVD ZnO:B for use as TCO in thin-film silicon solar cells.Thin Solid Films 515 (2007) 8558-8561).But the raw material diethyl zinc (DEZn) of this Technology Need is a kind of raw material of costliness, and needs poisonous impurity gas borine (B usually in order to obtain high conductivity
2H
6).Though the MOCVD technology can directly be prepared the ZnO film of type of having gold tower structure, because its surface topography has more multi-angular and sharp keen spike, it is applied in to understand in the silicon-film solar-cell as preceding electrode influence the battery device characteristic; Can using plasma the method for bombardment eliminate corner angle and spike (referring to M.L.Addonizio; A.Antonaia.Surface morphology and light scattering properties of plasma etched ZnO:B films grown by LP-MOCVDfor silicon thin film solar cells.Thin Solid Films 518 (2009) 1026-1031), but there is shortcoming more rambunctious in this method.Adopt ullrasonic spraying thermal decomposition method (USP) cheaply also can on glass substrate, directly prepare to have the ZnO film of the block matte pattern of triangle, have corner angle and sharp keen spike too; Its higher resistivity (3 * 10 in addition
-3Ω cm); Having limited it uses in silicon-film solar-cell (referring to Jiao Bao-Chen; Zhang Xiao-Dan; Wei Chang-Chun, et al.Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis.Chinese Physics B, 20 (2011) 3:037306).
[summary of the invention]
Corner angle that the textured ZnO membrane that the present invention seeks to directly to prepare to prior art exists and sharp peaks and the problem that reduces ZnO film resistivity; A kind of method of improving ZnO film pattern and electrology characteristic is provided, and this method adopts cheaply ullrasonic spraying thermal decomposition method (USP) the acquisition textured ZnO membrane that combines with magnetron sputtering method.
Technical scheme of the present invention:
A kind of method of improving ZnO film pattern and electrology characteristic, step is following:
1) be that Zn source, indium acetate are that the mixed liquor of doped indium source, water and absolute ethyl alcohol is a solvent with the zinc acetate; Zinc acetate added make the predecessor mixed liquor in the solvent and add glacial acetic acid; With pressure is that the air of 4～10bar is carrier gas; It is ZnO thin film doped to adopt the ullrasonic spraying thermal decomposition method on glass substrate, to prepare the indium with corner block pattern, and the Control Parameter of ullrasonic spraying thermal decomposition method is: supersonic frequency 1.7MHz, growth temperature are that 400-490 ℃, the ZnO thin film doped growth thickness of indium are 0.5-4 μ m;
2) with the allumen be target; It is ZnO thin film doped to adopt magnetron sputtering method on above-mentioned indium is ZnO thin film doped, to prepare aluminium, and the Control Parameter of magnetron sputtering method is: frequency 20KHz, power 100-200W, reacting gas are that oxygen, the growth temperature of flow 1-5sccm is that 200-400 ℃, the ZnO thin film doped growth thickness of aluminium are 0.2-1 μ m.
The In/Zn atomic weight percentage in said doped indium source and Zn source is 0.5-2%; The volume ratio of water and absolute ethyl alcohol is 1: 3 in the solvent; The concentration of zinc acetate in solvent is 0.2mol/L; The addition of glacial acetic acid is 3～30vol% with the ratio of predecessor mixed liquor.
The mass percent of zinc and aluminium is 0.5-2% in the said allumen.
Advantage of the present invention and good effect:
Indium doping ZnO/aluminium doping ZnO the laminated film of preparation has pyramid type matte pattern; Corner angle and sharp keen spike have been eliminated; Incident light had stronger scattering process; Utilized the ZnO film of sputtering technology preparation to have the characteristics of low-resistivity simultaneously, the conductive characteristic of ZnO transparent membrane is significantly improved and has improved.
[description of drawings]
Fig. 1 is the surface topography map that the USP legal system is equipped with the IZO film of 1at.%In doping.
Fig. 2 is the surface topography map that the USP legal system is equipped with the IZO film of 1.5at.%In doping.
Fig. 3 is the surface topography map of sputtering method thick AZO film of preparation 300nm on the IZO film that 1at.%In mixes.
Fig. 4 is the scattering index figure of sputtering method thick AZO film of preparation 300nm on the IZO film that 1at.%In mixes.
Fig. 5 is the surface topography map of sputtering method thick AZO film of preparation 500nm on the IZO film that 1at.%In mixes.
Fig. 6 is the scattering index figure of sputtering method thick AZO film of preparation 500nm on the IZO film that 1at.%In mixes.
Fig. 7 is the surface topography map of sputtering method thick AZO film of preparation 1000nm on the IZO film that 1at.%In mixes.
Fig. 8 is the scattering index figure of sputtering method thick AZO film of preparation 1000nm on the IZO film that 1at.%In mixes.
Fig. 9 is the surface topography map of sputtering method thick AZO film of preparation 300nm on the IZO film that 1.5at.%In mixes.
Figure 10 is the scattering index figure of sputtering method thick AZO film of preparation 300nm on the IZO film that 1.5at.%In mixes.
Figure 11 is the surface topography map of sputtering method thick AZO film of preparation 500nm on the IZO film that 1.5at.%In mixes.
Figure 12 is the scattering index figure of sputtering method thick AZO film of preparation 500nm on the IZO film that 1.5at.%In mixes.
Figure 13 is the surface topography map of sputtering method thick AZO film of preparation 1000nm on the IZO film that 1.5at.%In mixes.
Figure 14 is the scattering index figure of sputtering method thick AZO film of preparation 1000nm on the IZO film that 1.5at.%In mixes.
[embodiment]
Below in conjunction with accompanying drawing and specific embodiment technical scheme of the present invention is carried out detailed explanation.
The present invention proposes to utilize cheaply, and the ullrasonic spraying pyrolysis technique deposits the ZnO transparent conductive film that obtains the suede degree and considers that sputtering technology can obtain the technical advantage of the ZnO film of high conductivity, densification, has proposed to control based on these two kinds technology the suede degree and the electrology characteristics of preparation ZnO transparent conductive films.
The ZnO (AZO) for preparing doped with Al with ZnO (IZO) and the sputtering technology of USP technology doping In below is an example, illustrates the effect that IZO/AZO prepares film.
Carry out detailed explanation in the face of technical scheme of the present invention down.
Embodiment 1:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the glacial acetic acid of 10vol.% simultaneously according to Zn/In=1at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, and the 1at.%In doping IZO film surface appearance of preparation is as shown in Figure 1, and its root mean square surface roughness is 62.4nm.Can see comparatively obvious edges and corners and spike.
On above-mentioned 1at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 30min, and the AZO film of preparation 300nm.ZnO film composite membrane surface topography such as Fig. 3 of obtaining; Do contrast with Fig. 1 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is as shown in Figure 4, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 61.77nm, and resistivity is 2.69 * 10
-3Ω cm.
Embodiment 2:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the glacial acetic acid of 10vol.% simultaneously according to Zn/In=1at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, the 1at.%In doping IZO film of preparation.
On 1at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 50min, and the AZO film of preparation 500nm.ZnO film composite membrane surface topography such as Fig. 5 of obtaining; Do contrast with Fig. 1 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is as shown in Figure 6, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 64.23nm, and resistivity is 1.90 * 10
-3Ω cm.
Embodiment 3:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the glacial acetic acid of 10vol.% simultaneously according to Zn/In=1at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, the 1at.%In doping IZO film of preparation.
On 1at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 100min, and the AZO film of preparation 1000nm.ZnO film composite membrane surface topography such as Fig. 7 of obtaining; Do contrast with Fig. 1 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is as shown in Figure 8, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 64.26nm, and resistivity is 1.55 * 10
-3Ω cm.
Embodiment 4:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the glacial acetic acid of 18vol.% simultaneously according to Zn/In=1.5at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, and the 1.5at.%In doping IZO film surface appearance of preparation is as shown in Figure 2, and its root mean square surface roughness is 31.72nm.Can see comparatively obvious edges and corners and spike.
On above-mentioned 1.5at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 30min, and the AZO film of preparation 300nm.ZnO film composite membrane surface topography such as Fig. 9 of obtaining; Do contrast with Fig. 2 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is shown in figure 10, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 32.94nm, and resistivity is 2.24 * 10
-3Ω cm.
Embodiment 5:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the glacial acetic acid of 18vol.% simultaneously according to Zn/In=1.5at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, the 1.5at.%In doping IZO film of preparation.
On 1.5at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 50min, and the AZO film of preparation 500nm.ZnO film composite membrane surface topography such as Figure 11 of obtaining; Do contrast with Fig. 2 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is shown in figure 12, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 30.97nm, and resistivity is 2.16 * 10
-3Ω cm.
Embodiment 6:
Adopt the USP method, as the Zn source, indium acetate is as the doped indium source with zinc acetate.As solvent, zinc acetate is configured to the solution of 0.2mol/L after water and absolute ethyl alcohol mixed according to 1: 3, adds indium acetate, add the 18vol.% glacial acetic acid simultaneously according to Zn/In=1.5at.%.Eagle 2000 glass are as substrate.Growth temperature is 470 ℃.Compressed air is as carrier gas, the 1.5at.%In doping IZO film of preparation.
On 1.5at.%In doping IZO film, utilize the medium frequency magnetron sputtering legal system to be equipped with the AZO film, adopting mass ratio is the allumen target of 2w.%, is that 280 ℃, reacting gas are high-purity O in growth temperature
2, its flow is 1.5sccm, through control growing time 100min, and the AZO film of preparation 1000nm.ZnO film composite membrane surface topography such as Figure 13 of obtaining; Do contrast with Fig. 2 and can see obviously that corner angle and spike disappear, and obtain pyramid type crystal grain.Scattering index to incident light is shown in figure 14, shows that this pyramid type pattern has than the obvious scattering effect incident light.Its RMS is 36.05nm, and resistivity is 1.54 * 10
-3Ω cm.
In sum, adopt the preparation IZO of ullrasonic spraying thermal decomposition method elder generation film cheaply, the back adopts magnetron sputtering method to prepare the AZO film, can eliminate IZO film crystal grain corner angle and spike; The IZO/AZO composite membrane that obtains has pyramid type matte pattern, and incident light is produced the obvious scattering effect, can realize lower resistivity (about 1.5 * 10 simultaneously
-3Ω cm), the matte transparent conductive film for use for solar cell of silicon thin film provides new technology path.
Present technique also combines with sputtering technology applicable to directly preparation matte pattern ZnO transparent conductive film is technological, eliminates corner angle and spike.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (3)
1. method of improving ZnO film pattern and electrology characteristic is characterized in that step is following:
1) be that Zn source, indium acetate are that the mixed liquor of doped indium source, water and absolute ethyl alcohol is a solvent with the zinc acetate; Zinc acetate is added in the solvent; Adding indium acetate then makes the predecessor mixed liquor and adds glacial acetic acid; With pressure is that the air of 4 ~ 10bar is carrier gas; It is ZnO thin film doped to adopt the ullrasonic spraying thermal decomposition method on glass substrate, to prepare the indium with corner block pattern, and the Control Parameter of ullrasonic spraying thermal decomposition method is: supersonic frequency 1.7MHz, growth temperature are that 400-490 ℃, the ZnO thin film doped growth thickness of indium are 0.5-4 μ m;
2) with the allumen be target; It is ZnO thin film doped to adopt magnetron sputtering method on above-mentioned indium is ZnO thin film doped, to prepare aluminium, and the Control Parameter of magnetron sputtering method is: frequency 20KHz, power 100-200W, reacting gas are that oxygen, the growth temperature of flow 1-5sccm is that 200-400 ℃, the ZnO thin film doped growth thickness of aluminium are 0.2-1 μ m.
2. according to the said method of improving ZnO film pattern and electrology characteristic of claim 1, it is characterized in that: the In/Zn atomic weight percentage in said doped indium source and Zn source is 0.5-2%; The volume ratio of water and absolute ethyl alcohol is 1:3 in the solvent; The concentration of zinc acetate in solvent is 0.2mol/L; The addition of glacial acetic acid is 3 ~ 30vol% with the ratio of predecessor mixed liquor.
3. according to the said method of improving ZnO film pattern and electrology characteristic of claim 1, it is characterized in that: the mass percent of zinc and aluminium is 0.5-2% in the said allumen.
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| CN1787248A (en) * | 2005-11-24 | 2006-06-14 | 大连理工大学 | Method for preparing zinc oxide material LED |
| CN101562216B (en) * | 2009-05-27 | 2010-09-08 | 南开大学 | Method for preparing textured ZnO membrane with pyramid-like structure |
| CN101838532B (en) * | 2010-02-03 | 2013-06-12 | 海洋王照明科技股份有限公司 | Zinc oxide light-emitting component and preparation method thereof |
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