CN102231283A - Wireless interface of non-volatile memory - Google Patents
Wireless interface of non-volatile memory Download PDFInfo
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- CN102231283A CN102231283A CN2011100868716A CN201110086871A CN102231283A CN 102231283 A CN102231283 A CN 102231283A CN 2011100868716 A CN2011100868716 A CN 2011100868716A CN 201110086871 A CN201110086871 A CN 201110086871A CN 102231283 A CN102231283 A CN 102231283A
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Abstract
The invention relates to a wireless interface of a non-volatile memory. The wireless interface comprises an antenna, a radio frequency circuit module and a digital circuit module, wherein the wireless interface, the antenna, the radio frequency circuit module and the digital circuit module are integrated together on a chip; the antenna is connected with the digital circuit module through the radio frequency circuit module; and each port of the digital circuit module is directly connected with the corresponding port of the non-volatile memory. A reader-writer or a downloader accesses information to the non-volatile memory; the energy and the information which are sent by the reader-writer or the downloader via a reader-writer or downloader antenna are coupled through the antenna and are transmitted to the radio frequency circuit module; the radio frequency circuit module is used for transforming the energy into a supply voltage of the wireless interface and transforming the information into a numerical coding and then storing the numerical coding into the non-volatile memory; or the information of the non-volatile memory is reflected to the reader-writer or the downloader through the wireless interface so as to realize an information interaction function between the reader-writer or the downloader and the non-volatile memory. The wireless interface provided by the invention has the advantages of low cost, low power consumption and small area.
Description
Technical field
The present invention relates to the wave point of wireless communication field, be specifically related to a kind of wave point of nonvolatile memory.
Background technology
Exist various wired, wave points at present in the communications field: as the parallel port (EPP) of early stage existence and IEEE 1394 interfaces and the USB interface of using till today and the ISA interface that grows up gradually in recent years, pci interface, AGP interface, PCI Express interface etc. always.These interfaces mainly are divided into parallel interface and serial line interface.They are wireline interface mostly, have also to need external power source simultaneously for device such as storer transmission data the time be its power supply.Although also there are now some wave points on the market: as, GPRS wave point, but they are the same with wireline interface noted earlier mostly, be the component module that is separated with storer, need utilize some hardware or software engineering could realize and being connected of storer.In addition, the compatibility between distinct interface and different memory or other connection devices also is an a great problem.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of wave point of nonvolatile memory, solve the problem of the poor compatibility between distinct interface and nonvolatile memory or other connection devices, had the advantage of low cost, low-power consumption, small size.
In order to achieve the above object, the technical scheme taked of the present invention is:
A kind of wave point of nonvolatile memory, wave point 2 comprises antenna 3, radio-frequency (RF) circuit module 4 and digital circuit blocks 5, antenna 3, radio-frequency (RF) circuit module 4 and digital circuit blocks 5 are integrated on the chip 1 together, antenna 3 is connected with digital circuit blocks 5 by radio-frequency (RF) circuit module 4, and each port of digital circuit blocks 5 directly connects with the corresponding port of nonvolatile memory 6.
Described digital circuit blocks 5 is connected realization with the concrete annexation of nonvolatile memory 6 one to one by EN enable signal end, WR read-write control end, Data data line, Address address wire, Select signal selecting side.
Described wave point 2 by UHF modulation system or UWB transmission mode to the read write line return message.
Described wave point 2 is in Frequency Band Selection one or the compatibility of low frequency, high frequency 13.56MHz and ultrahigh frequency 860MHz～960MHz, 2.45GHz, 5GHz.
Described nonvolatile memory 6 is nonvolatile memory independently on the chip 1, or the nonvolatile memory that carries of wave point.
Because the present invention has largely simplified the annexation of wave point 2 with corresponding nonvolatile memory 6 from structure, adaptability is strong between the two simultaneously, data transmission stability good, this mode has also been eliminated ubiquitous hidden danger that each other can not be compatible between common wireline interface and wave point and the nonvolatile memory 6, simultaneously, this wave point is integrated in chip internal with storer, has the advantage of low cost, low-power consumption, small size.
Description of drawings
Fig. 1 is a structural representation block diagram of the present invention.
Fig. 2 is a principle of work block diagram of the present invention.
Fig. 3 adopts the principle of work block diagram of UHF modulation system for up-link of the present invention.
Fig. 4 adopts the principle of work block diagram of UWB transmission mode for up-link of the present invention.
Fig. 5 is the principle of work block diagram of the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done detailed description.
With reference to Fig. 1, a kind of wave point of nonvolatile memory, wave point 2 comprises antenna 3, radio-frequency (RF) circuit module 4 and digital circuit blocks 5, antenna 3, radio-frequency (RF) circuit module 4 and digital circuit blocks 5 are integrated on the chip 1 together, antenna 3 is connected with digital circuit blocks 5 by radio-frequency (RF) circuit module 4, and each output terminal port of digital circuit blocks 5 is connected with the corresponding port of nonvolatile memory 6.
The concrete annexation of described digital circuit blocks 5 and nonvolatile memory 6 is connected realization one to one by EN enable signal end, WR read-write control end, Data data line, Address address wire, Select signal selecting side, and digital circuit blocks 5 and nonvolatile memory 6 realize that the transmission of energy and information is to enable control end control by EN to start and do not bring into play storer 6 and enter duty; Nonvolatile memory 6 is read in or write to WR read-write control line control whether to the information that transmits from card reader or downloader 7; When the corresponding a plurality of wave points of a nonvolatile memory or a plurality of nonvolatile memory of wave point correspondence, control the wave point that selects the nonvolatile memory of which correspondence or select which correspondence with Select signal selecting side, make corresponding port enter the effective status of work simultaneously; The Data data line is then controlled the information that will pass mutually by wave point 2 card reader or downloader 7 and nonvolatile memory 6, the Address address wire is then controlled corresponding address, appointed information is placed on the position in the nonvolatile memory 6, this structure has been simplified the annexation of wave point 2 with corresponding nonvolatile memory 6 to a great extent, adaptability is strong between the two simultaneously, data transmission stability is good, simultaneously this mode has also been eliminated ubiquitous hidden danger that each other can not compatibility between common wireline interface and wave point and the nonvolatile memory 6, on the contrary, wireline interface needs the support of more exterior technology and some other software and hardwares to realize, and need emphasis to consider each other compatibility, stability of data transmission, reliability.
With reference to Fig. 3 and Fig. 4, to the read write line return message, radio-frequency (RF) circuit module 4 relates generally to power up circuit 13, biasing circuit 14, clock circuit 15, reset circuit 16, demodulator circuit 17, modulation circuit 18 or UWB transmitter 19 to described wave point 2 by UHF modulation system or UWB transmission mode.Wherein radio-frequency (RF) circuit module 4 each module principle of work are as follows: power up circuit 13 is the Conversion of energy that transmits from antenna 3 ends the needed supply voltages of wave point 2 operate as normal; Reset circuit 16 guarantees that in power up for digital circuit blocks provides an initial asserts signal, the forced regime machine enters known initial state, makes digital circuit blocks 5 normally to move; Demodulator circuit 17 is converted into the simulating signal that transmits from antenna 3 digital signal and is transferred to digital circuit blocks 5; The operate as normal of clock circuit 15 control figure circuit modules 5 is handled baseband signal, instruction decode, anti-collision; 14 of biasing circuits provide various required biasings for the demodulator circuit module; Modulation circuit 18 mainly is to change the chip input impedance of seeing into from antenna 3 ends according to the digital signal that digital circuit blocks 5 will be returned, and then realizes the purpose of backscattered modulation; 19 in UWB transmitter mainly is the situation that is applied to require to have in the reflection process higher data transmission rate, ultra wide band range, low-power consumption.In general, the rate requirement of transmission data is selected for use the UWB transmission mode when higher, select the UHF modulation system when requiring circuit simple as far as possible for use.。
Described wave point 2 is in Frequency Band Selection one or the compatibility of low frequency, high frequency 13.56MHz and ultrahigh frequency 860MHz～960MHz, 2.45GHz, 5GHz.
Described nonvolatile memory 6 is nonvolatile memory independently on the chip 1, or the nonvolatile memory that carries of wave point.
Principle of work of the present invention is:
With reference to Fig. 2, read write line or downloader 7 are to the certain information of nonvolatile memory 6 accesses, at first certain energy that read write line or downloader 7 is sent through read write line or downloader antenna 8 by antenna 3 and information are coupled into and are transferred to radio-frequency (RF) circuit module 4, then radio-frequency (RF) circuit module 4 energy that coupling is come in partly is converted into the wave point 2 needed supply voltage of self working, the message part that coupling is come in is converted into digital circuit blocks 5 discernible numerical codings through demodulation simultaneously, and then by digital circuit blocks 5 with information stores in the nonvolatile memory 6 of correspondence, in addition, also can reflect the up-link of the information of nonvolatile memory 6 to read write line or downloader 7, so just realize information interaction function between read write line or downloader 7 and the nonvolatile memory 6 by wave point 2 by wave point 2.
Below in conjunction with embodiment principle of work of the present invention is done detailed description.
With reference to Fig. 5, simultaneously integrated three nonvolatile memory 6-1,6-2,6-3 and wave points 2 on the chip 1, wherein wave point 2 comprises that antenna 3, radio-frequency (RF) circuit module 4 and digital circuit blocks 5 three parts form.
With wave point 2 direct and three nonvolatile memory 6-1,6-2, the chip 1 at 6-3 place is integrated on the same substrate, make each port of digital signal processing module 5 of wave point 2 corresponding separately simultaneously with the receiving end port of three nonvolatile memories, when workstation1 2 requires main frame 11 to three nonvolatile memory 6-1,6-2, two nonvolatile memory 6-1 among the 6-3,6-2 write command or when reading information, main frame 11 just can be by opening the Enable Pin of read write line or downloader 7, make read write line or downloader 7 send certain energy and order to three nonvolatile memories, the wave point 2 that has been integrated on the chip 1 will pass through self-contained on-chip antenna 3 coupling energies, and be the needed supply voltage of internal circuit work with this Conversion of energy, understand the signal of read write line or downloader transmission simultaneously by demodulator circuit, and being transferred to follow-up digital circuit blocks 5, the digital circuit blocks 5 of wave point 2 inside just can further realize Base-Band Processing and then further control and three nonvolatile memory 6-1,6-2, the connectivity port of 6-3 correspondence: EN enables control end, WR reads and writes control end, Select signal selecting side, the Data data line, the Address address wire.Wherein EN enables that storer 6-1,6-2 are not brought into play in three of control end controls, 6-3 starts work; WR read-write control line control only writes nonvolatile memory 6-1,6-2 to the information that transmits from read write line or downloader 7, simultaneously nonvolatile memory 6-3 is not only write but also read; Corresponding three nonvolatile memory 6-1,6-2,6-3 will be selected in Select signal selecting side, make their corresponding port enter the effective status of work, if only can not send out that storer writes and another one and when need not to carry out work to two here, then can be by the control of Select signal selecting side; The Data data line then controls read write line or downloader 7 passes through wave point 2 and three nonvolatile memory 6-1,6-2, the information that 6-3 will pass mutually, the Address address wire is then controlled corresponding address, information is placed on nonvolatile memory 6-1,6-2, position among the 6-3 and read the information of nonvolatile memory 6-3 corresponding address and return to read write line or downloader 7, specify is exactly to work as EN, Select is in simultaneously and makes nonvolatile memory work 6-1,6-2, during the effective status of 6-3, nonvolatile memory work 6-1 is then indicated in the WR instruction, 6-2 not only writes but also read for a writing information nonvolatile memory work 6-3, and this moment, we just can write nonvolatile memory 6-1 to read write line or downloader 7 by the information that wave point 2 transmits by Data line and Address line, 6-2, correspondence position among the 6-3; As required the information of nonvolatile memory 6-3 is returned energy and the order that will transmit by wave point 2 to read write line or downloader 7 once more then, send back to workstation1 2 by main frame 11 at last.
In the accompanying drawing, 1 is chip; 2 is wave point; 3 is antenna; 4 is radio-frequency (RF) circuit module; 5 is digital circuit blocks; 6 is nonvolatile memory; 6-1,6-2,6-3 are respectively three nonvolatile memories among the embodiment; 7 is read write line or downloader; 8 is read write line or downloader antenna; 9 is energy and the signal that read write line or downloader transmit to wave point; 10 energy and signals for the wave point reflection; 11 is main frame; 12 is workstation; 13 is the power up circuit; 14 is biasing circuit; 15 is clock circuit; 16 is reset circuit; 17 is demodulator circuit; 18 is modulation circuit; 19 is the UWB transmitter.
Claims (5)
1. the wave point of a nonvolatile memory, it is characterized in that: wave point (2) comprises antenna (3), radio-frequency (RF) circuit module (4) and digital circuit blocks (5), antenna (3), radio-frequency (RF) circuit module (4) and digital circuit blocks (5) are integrated on the chip (1) together, antenna (3) is connected with digital circuit blocks (5) by radio-frequency (RF) circuit module (4), and each port of digital circuit blocks (5) directly connects with the corresponding port of nonvolatile memory (6).
2. the wave point of a kind of nonvolatile memory according to claim 1 is characterized in that: described digital circuit blocks (5) is connected realization with the concrete annexation of nonvolatile memory (6) one to one by EN enable signal end, WR read-write control end, Data data line, Address address wire, Select signal selecting side.
3. the wave point of a nonvolatile memory is characterized in that: described wave point (2) by UHF modulation system or UWB transmission mode to the read write line return message.
4. the wave point of a nonvolatile memory, it is characterized in that: described wave point (2) is in Frequency Band Selection one or the compatibility of low frequency, high frequency 13.56MHz and ultrahigh frequency 860MHz～960MHz, 2.45GHz, 5GHz.
5. the wave point of a nonvolatile memory is characterized in that: described nonvolatile memory (6) is the last nonvolatile memory independently of chip (1), or the nonvolatile memory that carries of wave point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011100868716A CN102231283A (en) | 2011-04-07 | 2011-04-07 | Wireless interface of non-volatile memory |
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| CN2011100868716A CN102231283A (en) | 2011-04-07 | 2011-04-07 | Wireless interface of non-volatile memory |
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| CN107438828A (en) * | 2015-07-31 | 2017-12-05 | 慧与发展有限责任合伙企业 | Determine that power rating is supported |
| CN107690753A (en) * | 2015-05-29 | 2018-02-13 | 马克西姆综合产品公司 | Low-power ultra-wideband emitter |
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| CN107690753A (en) * | 2015-05-29 | 2018-02-13 | 马克西姆综合产品公司 | Low-power ultra-wideband emitter |
| CN107690753B (en) * | 2015-05-29 | 2020-07-14 | 马克西姆综合产品公司 | Low power ultra-wideband transmitter |
| CN107438828A (en) * | 2015-07-31 | 2017-12-05 | 慧与发展有限责任合伙企业 | Determine that power rating is supported |
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Application publication date: 20111102 |