CN102223140B - Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator - Google Patents
Terahertz oscillation method based on carbon nanometer tube and terahertz oscillator Download PDFInfo
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- CN102223140B CN102223140B CN 201010145805 CN201010145805A CN102223140B CN 102223140 B CN102223140 B CN 102223140B CN 201010145805 CN201010145805 CN 201010145805 CN 201010145805 A CN201010145805 A CN 201010145805A CN 102223140 B CN102223140 B CN 102223140B
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Abstract
The invention provides a terahertz oscillation method based on a carbon nanometer tube. Direct-current bias voltage is applied to two ends of a semiconductor carbon nanometer tube so that the drifting speed of the electrons in the semiconductor carbon nanometer tube is arranged in the negative differential drifting speed area, thus generating the oscillation current that changes periodically withthe time in the semiconductor carbon nanometer tube. Furthermore, the invention also provides a terahertz oscillator capable of realizing the method and a manufacturing method for the terahertz oscillator. The terahertz oscillator of the carbon nanometer tube consists of a chip and a peripherical circuit that is connected with the chip. Being as a novel solid-state THz oscillator, the terahertz oscillator has the advantages of having a simple structure, being integrated easily, being capable of running under room temperature and the like, and is expected to be widely applied to the spatial wireless communication systems in the future.
Description
Technical field
The present invention relates to method of work, device architecture of a kind of Terahertz (THz) oscillator and preparation method thereof, particularly a kind ofly utilize carbon nano-tube to produce the method for THz ripple and realize device architecture of this method and preparation method thereof.The invention belongs to the semiconductor photoelectric device technical field.
Background technology
The accurate one-dimensional material a kind of simple in structure that carbon nano-tube is made up of carbon atom, on how much, it can be regarded as to be curled by mono-layer graphite and forms.Since carbon nano-tube is found [Nature 354,56 (1991) for S.Iijima, Helicalmicrotubules of graphite carbon], the electronics of based semiconductor carbon nano-tube and photonic propulsion characteristic have caused people's research interest.This mainly is because the carbon nano-tube of semi-conductor type has the not available unique electronics transport property of carbon nano-tube of insulated type and metal mold.Discover, the electrons transport property of semiconductor carbon nanometer tube is to defective [J.C.Charlier, Defects in carbonnanotubes, Acc.Chem.Res.35,1063 (2002)], impurity [C.Zhang et al., Impuritymediated absorption continuum in single-walled carbon nanotubes, Appl.Phys.Lett.90,023106 (2007)] and structural deformation [J.Q.Lu et al., Metal-to-Semiconductor Transition in Squashed Armchair Carbon Nanotubes, Phys.Rev.Lett.90,156601 (2003) .] etc. factor have strong dependence effect.At present, theoretical and many researchs about semiconductor carbon nanometer tube electronics device and application thereof experimentally occurred.These devices comprise field-effect transistor [P.L.McEuen et al., Single-walled carbon nanotubeelectronics, IEEE Trans.Nanotechnol.1,78 (2002)], electro-optical device [MisewichJ A et al., Electrically induced optical emission from a carbon nanotubeFET, Science 300,783 (2003)] and electromechanical transducer [the J.Wu et al. that utilizes the work of metal-semiconductor transition effects, Computational design of carbon nanotubeelectromechanical pressure sensors, Phys.Rev.B 69,153406 (2004)] etc.In addition, carbon nano-tube has also tentatively obtained breakthrough in the application technology of storage and aspects such as flat panel display at random.Therefore, semiconductor carbon nanometer tube has huge application potential and economic benefit in applications such as novel electron device and photonic propulsion devices.
Recently, the electronic multivibrator transport property of semiconductor carbon nanometer tube has obtained people's extensive concern under the DC electric field effect.In theory, Meng Te-Carlow analogy method is discovered electron drift velocity υ
dIn the relation of extra electric field E, electron drift velocity υ
dAlong with the increase of electric field E constantly increases, still, when electric field reaches a critical value E
cThe time, electron drift velocity reaches a maximum υ
p, after this along with the increase of electric field, electron drift velocity will diminish, the electron drift velocity υ of this moment
dBe called negative differential drift velocity (Negativedifferential drift velocity).Usually said negative differential drift velocity characteristic that Here it is.The Electron drift velocity peak values can reach 5 * 10 in the semiconductor carbon nanometer tube
5M/s[G.Pennington and N.Goldsman, Semiclassical transport and phonon scattering of elctrons insemiconducting carbon nanotubes, Phys.Rev.B 68,045426 (2003); V.Perebeinos et al., Electron-phonon interaction and transport insemiconducting carbon nanotubes, Phys.Rev.Lett.94,086802 (2005) .].In addition, theoretical research finds that also Electron drift speed also changes in the zones of different of nanotube in the semiconductor carbon nanometer tube, show depend on bias voltage speed with the spatial oscillation characteristic.This oscillatory occurences is because [the A.Akturk et al. that the high scattered power that the optical phonon emission causes causes, Electron Transport andVelocity Oscillations in a Carbon Nanotube, IEEE Trans.Nanotechnol.6,469 (2007)].Utilize electron drift velocity with the length of carbon nano-tube thereby this characteristic of vibration that vibration causes electron concentration to take place, [Akin Akturk et al. such as Akturk, Terahertz currentoscillations in single-walled zigzag carbon nanotubes, Phys.Rev.Lett.98,166803 (2007)] a kind of method of the THz of realization vibration has been proposed.Yet the present invention will propose the method for the another kind of THz of realization vibration, utilize the negative differential speed characteristics of carbon nano-tube to produce the THz current oscillation, and the method for propositions such as the principle of this generation THz vibration and Akturk has essential different.
The THz technology has the important use potentiality in Large Volume Data transmission and the spacing wireless communication aspects in future.THz technical development at present main cause slowly is owing to lack effective THz radiation source and detector.How to realize focus small-sized and that to be easy to integrated solid-state THz oscillation source be current research.The present invention proposes a kind of device that utilizes the negative differential drift velocity characteristic realization current oscillation of semiconductor carbon nanometer tube, its frequency of oscillation is in the THz frequency range, and the present invention also will provide key technology and the implementation method that carbon nano-tube THz oscillator is made in experiment.At present, utilize the method for the negative differential drift velocity characteristic generation THz current oscillation of semiconductor carbon nanometer tube not to be seen in report as yet, simultaneously, the manufacture method report of related device is not arranged experimentally yet.Therefore, the present invention has novelty aspect principle and the element manufacturing.Carbon nano-tube THz oscillator will produce important use value aspect the transmission of the Large Volume Data in future and the space communication.
Summary of the invention
Terahertz Oscillators that provides a kind of Terahertz oscillation method based on carbon nano-tube and this method of realization and preparation method thereof is provided the technical problem that the present invention mainly solves.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of Terahertz oscillation method based on carbon nano-tube, it is characterized in that: apply Dc bias at the semiconductor carbon nanometer tube two ends, make the electron drift velocity in this semiconductor carbon nanometer tube be positioned at negative differential drift velocity zone, thereby in this semiconductor carbon nanometer tube, produce periodically variable oscillating current in time.
Further, can be by the transport property of electronics under DC electric field in the described semiconductor carbon nanometer tube of simulation, calculate the electron drift velocity of described semiconductor carbon nanometer tube and the relation of extra electric field, thereby find described electron drift velocity to be positioned at negative differential drift velocity when zone corresponding to the Dc bias scope of extra electric field; Apply the Dc bias that is positioned at this scope at described semiconductor carbon nanometer tube two ends then.
A kind of carbon nano-tube Terahertz Oscillators based on said method is made up of chip and the peripheral circuit that is attached thereto;
Described chip comprises: semiconductor carbon nanometer tube and the electrode that is positioned at described semiconductor carbon nanometer tube two ends, and the electrode at described semiconductor carbon nanometer tube and its two ends forms ohmic contact, and described chip is connected with peripheral circuit by described electrode;
Described peripheral circuit comprises: two coaxial wires, direct voltage source and high-frequency signal output modules; Described two coaxial wires contact with described electrode respectively by high frequency probe; Described direct voltage source is connected with inductance, is connected between described two coaxial wires, is used for applying Dc bias to described semiconductor carbon nanometer tube two ends; Described high-frequency signal output module and capacitances in series are connected between described two coaxial wires, are used for the output high-frequency signal.
Further, described chip also comprises substrate and the insulating barrier that is positioned on the substrate, and the electrode at described semiconductor carbon nanometer tube and its two ends is positioned on the described insulating barrier.
Further, the electrode at described semiconductor carbon nanometer tube two ends is parallel to each other and vertical with described semiconductor carbon nanometer tube.
Further, described electrode adopts gold or platinum to make.
Further, on the described electrode preparation leaded, described high frequency probe by the lead-in wire contact with described electrode.
Further, described high-frequency signal output module is spectrum analyzer.
A kind of manufacture method of above-mentioned carbon nano-tube Terahertz Oscillators is characterized in that: described carbon nano-tube Terahertz Oscillators is made up of chip and the peripheral circuit that is attached thereto, and the manufacture method of described chip comprises the steps:
(1) deposit SiO on the Si substrate
2Insulating barrier, and handle its surface, make it smooth smooth;
(2) choose a semiconductor carbon nanometer tube, utilize atomic force microscope to be placed on SiO
2On the insulating barrier;
(3) prepare two strip electrodes with the focused ion beam method at described semiconductor carbon nanometer tube two ends, make two electrodes parallel to each other, and all perpendicular to described semiconductor carbon nanometer tube, and form ohmic contact with described semiconductor carbon nanometer tube;
(4) make lead-in wire at described two electrodes, and resulting structures is encapsulated, lead-in wire is stretched out.
Further, described semiconductor carbon nanometer tube adopts Single Walled Carbon Nanotube.
The THz oscillation method that the present invention proposes is to utilize the negative differential drift velocity characteristic of semiconductor carbon nanometer tube to realize current oscillation.Semiconductor carbon nanometer tube all shows negative differential drift velocity characteristic under low temperature (as T=10K) and room temperature, and more remarkable (the V.Perebeinos etal. of this at low temperatures characteristic performance, Electron-phonon interaction and transport in semiconducting carbonnanotubes, Phys.Rev.Lett.94,086802 (2005)).The present invention makes this carbon nano-tube show negative differential drift velocity characteristic under the effect of applying direct current electric field by applying Dc bias at the semiconductor carbon nanometer tube two ends, and wherein, the electron drift velocity of semiconductor carbon nanometer tube is positioned at negative differential drift velocity zone.Because the doping of electron concentration is not very even in the semiconductor carbon nanometer tube, when Dc bias is biased in negative differential drift velocity zone, the minor variations of mixing is amplified rapidly, the variation of electron concentration just increases rapidly, and in time and spatial variations, namely formed periodically variable electric field farmland in time, satisfied Poisson's equation between electron concentration and the electric field strength, can calculate mutually, so the electric field farmland can be understood as the variation of electron concentration.That is to say, when direct voltage is biased in negative differential drift velocity zone, the minor variations of electron concentration just can excite the fluctuation of electric field strength in the semiconductor carbon nanometer tube in device, and this fluctuation can be propagated in device rapidly, and can be sustained.Like this, the space-time cycle movement of electronics has caused current oscillation, and this periodically variable current oscillation frequency in time is at the THz wave band.
Based on above-mentioned principle, the carbon nano-tube THz oscillator of the present invention's design is made up of chip and peripheral circuit, external dc bias voltage and the high-frequency signal that produces separate by the circuit that electric capacity and inductance form, Dc bias provides by the voltage source in the peripheral circuit, and the high frequency ac signal that is separated is exported by the high-frequency signal output module, and can be by the spectrum analyzer record.
This carbon nano-tube THz oscillator is as a kind of new type of solid state THz oscillator, have simple in structure, be easy to integrated and can working and room temperature etc. advantage, will in the Large Volume Data transmission in future and high-speed communication system, obtain application.
Description of drawings
Fig. 1 is the structural representation of carbon nano-tube THz oscillator of the present invention.
Fig. 2 is the electron drift velocity of Single Walled Carbon Nanotube among the embodiment and the graph of a relation of extra electric field.
When Fig. 3 is temperature T=10K, current concentration graph of a relation over time in the carbon nano-tube under the different Dc biases that simulation obtains.
Embodiment
Below in conjunction with accompanying drawing, further specify the specific embodiment of the present invention.
See also Fig. 1, a kind of carbon nano-tube THz oscillator is made up of chip and the peripheral circuit that is attached thereto.
Described chip comprises: semiconductor carbon nanometer tube 1 and the electrode 2,3 that is positioned at described semiconductor carbon nanometer tube 1 two ends, and described semiconductor carbon nanometer tube 1 forms ohmic contact with the electrode 2,3 at its two ends, and described chip is connected with peripheral circuit by described electrode 2,3.
Described peripheral circuit comprises: two coaxial wires 6, direct voltage source 7 and high-frequency signal output modules 8; Described two coaxial wires 6 contact with described electrode 2,3 respectively by high frequency probe; Described direct voltage source 7 is connected with inductance, is connected between described two coaxial wires 6, is used for applying Dc bias to described semiconductor carbon nanometer tube 1 two ends; Described high-frequency signal output module 8 and capacitances in series are connected between described two coaxial wires 6, are used for the output high-frequency signal.
Wherein, described chip also comprises Si substrate 4 and the SiO that is positioned on the Si substrate 4
2Insulating barrier 5, SiO
2The thickness of insulating barrier 5 is 300nm.Described semiconductor carbon nanometer tube 1 is that diameter is 2nm, and length is 300nm, chirality index n=25, doping content N
d=1 * 10
17Cm
-3Single Walled Carbon Nanotube.The electrode 2,3 at described semiconductor carbon nanometer tube 1 and its two ends is positioned on the described insulating barrier 5.The electrode 2 at described semiconductor carbon nanometer tube 1 two ends, 3 parallel to each other and vertical with described semiconductor carbon nanometer tube 1.Described electrode 2,3 adopts gold or platinum to make, and highly is about 20nm, it on preparation leaded, described high frequency probe contacts with described electrode 2,3 by going between.Described coaxial wire 6 internal resistances are 50 Ω, transmission direct voltage and high-frequency signal.In the present embodiment, described high-frequency signal output module 8 can be spectrum analyzer, and spectrum analyzer and described capacitances in series are connected between two coaxial wires 6.The high-frequency current signal that produces among the present invention is by the spectrum analyzer record, and the circuit of being made up of electric capacity and inductance detects.
The manufacture method of above-mentioned carbon nano-tube THz oscillator comprises the steps:
1, choose the Si of (100) orientation as Si substrate 4, deposition thickness is the SiO of 300nm thereon
2 Insulating barrier 5, and handle its surface, make it smooth smooth.
2, choosing a diameter is 2nm, and length is 300nm, chirality index n=25, doping content N
d=1 * 10
17Cm
-3Single Walled Carbon Nanotube as semiconductor carbon nanometer tube 1, utilize atomic force microscope to be placed on SiO
2On the insulating barrier 5.
3, two Ohm contact electrodes of preparation: preparing two width with the focused ion beam method at semiconductor carbon nanometer tube 1 two ends is 50nm, it highly is the electrode 2,3 of 20nm, two electrodes 2,3 parallel to each other, form ohmic contact all perpendicular to semiconductor carbon nanometer tube 1, and with semiconductor carbon nanometer tube 1.
4, make lead-in wire at two electrodes 2,3, chip is encapsulated, lead-in wire is stretched out.
5, after the chip preparation finished, chip is connected with peripheral circuit: utilize the high frequency probe of coaxial wire 6 to be connected with contact conductor, coaxial wire 6 other ends were connected with external circuit, as shown in Figure 1.
Open the direct voltage source 7 in the described peripheral circuit, this carbon nano-tube THz oscillator can enter operating state.Dc bias is biased in semiconductor carbon nanometer tube 1 two ends, the high-frequency signal that produces in the semiconductor carbon nanometer tube 1 arrives spectrum analyzer by the circuit that inductance and electric capacity form, and the output signal of carbon nano-tube THz oscillator just can obtain by spectrum analyzer like this.
When semiconductor carbon nanometer tube 1 two ends apply Dc bias, make the electron drift velocity in this semiconductor carbon nanometer tube 1 be positioned at negative differential drift velocity zone, thereby in this semiconductor carbon nanometer tube 1, produce periodically variable oscillating current in time.
Wherein, can be by the transport property of electronics under DC electric field in the described semiconductor carbon nanometer tube 1 of simulation, calculate the electron drift velocity of described semiconductor carbon nanometer tube 1 and the relation of applying direct current electric field, thereby find described electron drift velocity to be positioned at negative differential drift velocity when zone corresponding to the Dc bias scope of applying direct current electric field; Apply the Dc bias that is positioned at this scope at described semiconductor carbon nanometer tube 1 two ends then.
Drift-diffusion equation is a kind of method commonly used in the semiconductor device analog.Present embodiment adopts drift-diffusion equation to come the transport property of electronics under DC electric field in the analog semiconductor carbon nano-tube 1.The electron transfer speed of carbon nano-tube and the relation of extra electric field are included in drift-diffusion equation, and Fig. 2 is the electron drift velocity of the Single Walled Carbon Nanotube that calculates and the graph of a relation of extra electric field.The descender region of curve is negative differential drift velocity zone among the figure.The extra electric field corresponding with it can be scaled the Dc bias that adds, thereby can obtain the scope of Dc bias.
By finding the solution drift-diffusion equation, can also obtain the electric field of semiconductor carbon nanometer tube 1 under Dc bias and the spatial and temporal distributions characteristic of electron concentration, also just can obtain in the semiconductor carbon nanometer tube 1 electric current over time.When Fig. 3 had represented that temperature is 10K, semiconductor carbon nanometer tube 1 current concentration under the different voltages concerned over time.As can be seen from the figure, under Dc bias, produced the electric current of cycle variation in time in the semiconductor carbon nanometer tube 1.Can obtain by calculating, at Dc bias V
Dc=0.4,0.6,0.8 and during 1.0V, the current oscillation frequency is respectively 1.87THz, 1.78THz, 1.69THz and 1.45THz.Under Dc bias, the frequency of current oscillation is in the THz frequency range in the carbon nano-tube, and frequency of oscillation has the trend of reduction along with the increase of Dc bias.
The other technologies that relate among the present invention belong to the category that those skilled in the art are familiar with, and do not repeat them here.Above-described embodiment is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (6)
1. a carbon nano-tube Terahertz Oscillators is characterized in that: be made up of chip and the peripheral circuit that is attached thereto;
Described chip comprises: semiconductor carbon nanometer tube and the electrode that is positioned at described semiconductor carbon nanometer tube two ends, and the electrode at described semiconductor carbon nanometer tube and its two ends forms ohmic contact, and described chip is connected with peripheral circuit by described electrode; The electrode at described semiconductor carbon nanometer tube two ends is parallel to each other and vertical with described semiconductor carbon nanometer tube;
Described chip also comprises substrate and the insulating barrier that is positioned on the substrate, and the electrode at described semiconductor carbon nanometer tube and its two ends is positioned on the described insulating barrier;
Described peripheral circuit comprises: two coaxial wires, direct voltage source and high-frequency signal output modules; Described two coaxial wires contact with described electrode respectively by high frequency probe; Described direct voltage source is connected with inductance, is connected between described two coaxial wires, is used for applying Dc bias to described semiconductor carbon nanometer tube two ends; Described high-frequency signal output module and capacitances in series are connected between described two coaxial wires, are used for the output high-frequency signal.
2. according to the described carbon nano-tube Terahertz Oscillators of claim 1, it is characterized in that: described electrode adopts gold or platinum to make.
3. according to the described carbon nano-tube Terahertz Oscillators of claim 1, it is characterized in that: on the described electrode preparation leaded, described high frequency probe by the lead-in wire contact with described electrode.
4. according to the described carbon nano-tube Terahertz Oscillators of claim 1, it is characterized in that: described high-frequency signal output module is spectrum analyzer.
5. the manufacture method of a carbon nano-tube Terahertz Oscillators, described carbon nano-tube Terahertz Oscillators is made up of chip and the peripheral circuit that is attached thereto, it is characterized in that the manufacture method of described chip comprises the steps:
(1) deposit SiO on the Si substrate
2Insulating barrier, and handle its surface, make it smooth smooth;
(2) choose a semiconductor carbon nanometer tube, utilize atomic force microscope to be placed on SiO
2On the insulating barrier;
(3) prepare two electrodes with the focused ion beam method at described semiconductor carbon nanometer tube two ends, make two electrodes parallel to each other, and all perpendicular to described semiconductor carbon nanometer tube, and form ohmic contact with described semiconductor carbon nanometer tube;
(4) make lead-in wire at described two electrodes, and resulting structures is encapsulated, lead-in wire is stretched out;
The manufacture method of described peripheral circuit comprises: the high frequency probe of two coaxial wires is connected with described contact conductor, the coaxial wire other end is connected with external circuit, wherein, the direct voltage source of external circuit is biased in the semiconductor carbon nanometer tube two ends, the high-frequency signal that produces in the semiconductor carbon nanometer tube arrives the high-frequency signal output module by the circuit that inductance and electric capacity form, and the output signal of carbon nano-tube Terahertz Oscillators just can obtain by the high-frequency signal output module like this.
6. according to the manufacture method of the described carbon nano-tube Terahertz Oscillators of claim 5, it is characterized in that: described semiconductor carbon nanometer tube adopts Single Walled Carbon Nanotube.
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| CN102495321B (en) * | 2011-12-21 | 2014-04-16 | 中国科学院上海微系统与信息技术研究所 | Method for generating and identifying non-linear signal in semiconductor non-linear oscillation system |
| CN103337772B (en) * | 2013-07-03 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | THz wave based on graphene nanobelt produces device |
| CN103399349A (en) * | 2013-07-26 | 2013-11-20 | 清华大学 | Terahertz electromagnetic wave detector based on carbon nanotube-nickel heterojunction |
| CN103489943B (en) * | 2013-10-16 | 2016-06-01 | 电子科技大学 | The Terahertz absorption layer of carbon nanotube and metamaterial composite structure and preparation method |
| US10340459B2 (en) * | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
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| CN1948142A (en) * | 2005-10-12 | 2007-04-18 | 王洋 | Preparation method of carbon nano-tube array and its application in preparing antenna array |
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| CN1948142A (en) * | 2005-10-12 | 2007-04-18 | 王洋 | Preparation method of carbon nano-tube array and its application in preparing antenna array |
Non-Patent Citations (2)
| Title |
|---|
| C. Wang and J. C. Cao.Terahertz generation and chaotic dynamics in single-walled zigzag carbon.《AIP Chaos》.2009,1-6. |
| Terahertz generation and chaotic dynamics in single-walled zigzag carbon;C. Wang and J. C. Cao;《AIP Chaos》;20090914;1-6 * |
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