CN102222681B - Cmos image sensor and manufacture method - Google Patents
Cmos image sensor and manufacture method Download PDFInfo
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- CN102222681B CN102222681B CN201110187406.1A CN201110187406A CN102222681B CN 102222681 B CN102222681 B CN 102222681B CN 201110187406 A CN201110187406 A CN 201110187406A CN 102222681 B CN102222681 B CN 102222681B
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- photodiode
- raceway groove
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- horizontal direction
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
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Abstract
A kind of cmos image sensor and manufacture method, wherein, described cmos image sensor at least includes photodiode, wherein, including at least a raceway groove in described photodiode, and being perpendicular on axial horizontal direction at described photodiode, described raceway groove has maximum dopant concentration.Cmos image sensor provided by the present invention, by novel photoelectric diode structure, improve photodiode to photoelectronic transfer ability, add photoelectronic diffusion velocity, decrease the photoelectron quantity being trapped in photodiode, it is thus possible to realize the transfer of more efficiently photoelectron, improve the image quality of cmos image sensor, performance and resolution further.Additionally, present invention also offers the manufacture method of a kind of cmos sensor, it is possible on the premise of not changing existing processing step, it is achieved above-mentioned CMOS structure, thus it is sufficiently used existing Technology, saves production cost.
Description
Technical field
The present invention relates to semiconductor fabrication process, and particularly to cmos image sensor and manufacture method.
Background technology
Imageing sensor is the important component part of composition digital camera, according to the difference of device, can be divided into electric charge coupling
Clutch part (CCD) and complementary metal oxide semiconductors (CMOS) (CMOS) device.
Wherein, charge-coupled image sensor (CCD) development relatively early, owing to it has high sensitivity, high-resolution and outstanding
Noise control performance, be often applied in the high-end technology element of photography and vedio recording.Although CCD has preferable performance,
Relatively big yet with its volume, power consumption is relatively big, and cannot be the most general with Contemporary semiconductor manufacturing technology standard technology
Flow process is mutually compatible, causes high and product the compatibility of its production cost poor.
The most there is not the inherent shortcoming in above-mentioned CCD technology in cmos image sensor, it can utilize existing fully
Technological process and equipment, and integrate with the process circuit realiration associated, there is the level of integrated system of height.In addition, compare
In CCD, the advantages such as it is little that CMOS has volume, and power consumption is low, low cost, it was able in the photography and vedio recording product of low cost in recent years
Extensively application.
But, there is the problem of picture delay in cmos image sensor circuit, this limits in circuit to a certain extent
It is in the application of high-end image process field.
Refer to the structure that Fig. 1, Fig. 1 show in prior art the unit pixel of single pixel 4T type cmos image sensor
Schematic diagram.Wherein, cmos image sensor at least includes: photodiode (PD) 110, is positioned at the one of semiconductor base active area
End, is used for collecting photoelectron, reads optical signal；Floating diffusion region (FD) 160, is produced by described photodiode 110 for storage
Raw electronics；And the unit pixel of the MOS transistor 120-150 of four N-types, respectively transfering transistor 120, reset crystal
Pipe 130, driving transistor 140 and selection transistor 150.
Specifically, transmission transistor 120 is connected between photodiode 110 and floating diffusion region 160, for by photoelectricity
The photoelectron that diode 110 is collected is delivered to floating diffusion region 160；Reset transistor 130, is connected to power supply voltage terminal 170
And between floating diffusion region 160, will be stored in the electronics of floating diffusion region 160 to reset floating diffusion region 160 for release；Drive
Dynamic transistor 140, serves as source follower buffer amplifier for responding the output signal from photodiode 110；Select
Transistor 150, is connected to drive transistor 140, to be addressed operation.
This cmos image sensor in the course of the work, first, locate simultaneously by reset transistor 130 and transmission transistor 120
In opening, now, photodiode 110 is in completely depleted state.Then, Guan Bi reset transistor 130 and transmission crystalline substance
Body pipe 120, photodiode 110 starts to collect photoelectron.After a period of time, photoelectron filled by photodiode 110.Connect
, under the effect of electric potential difference, the electronics collected by photodiode 110 transfers to floating diffusion by transmission transistor 120
District 160, and, the photoelectron entering floating diffusion region 160 produces output signal by driving transistor 140 further, thus
Realize the process of opto-electronic conversion.
But, in existing cmos image sensor technology, photoelectron is transferred to floating diffusion region 160 to be needed certain
Time, and, for driving driving electric field that photoelectron carries out shifting to decline rapidly along with the increase of photodiode 110 size
Subtract, also have impact on photoelectronic movement velocity.These all make photoelectron from photodiode 110 to floating diffusion region 160
Motor process becomes more slow, for having the photodiode of large-size.Additionally, due to electric field intensity or
The restriction of transfer time, part photoelectron cannot be introduced into floating diffusion region 160, and has stayed in photodiode 110, thus
Result in the problem such as information dropout and picture lag delay.
Summary of the invention
The invention provides a kind of cmos image sensor and preparation method thereof, improve photodiode to photoelectronic
Capacity gauge, more effectively shifts collected photoelectron, thus alleviates and even solve cmos image sensor picture delay
Etc. problem.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of cmos image sensor, at least includes photodiode,
Wherein, including at least a raceway groove in described photodiode, and it is perpendicular to axial horizontal direction at described photodiode
On, described raceway groove has maximum dopant concentration.
Optionally, the electromotive force of described raceway groove is higher than the electromotive force in other region in described photodiode.
Optionally, described raceway groove is N-shaped doping.
Optionally, described raceway groove is positioned in the middle of described photodiode so that described photodiode is about described raceway groove
Distributed architecture axisymmetricly.
Optionally, described photodiode comprises a plurality of raceway groove, and on the horizontal direction of described photodiode, at least
A raceway groove is had to have maximum dopant concentration.
Optionally, described each bar raceway groove has different doping contents, and the doping content of every raceway groove is more than described light
The doping content of non-channel region on electric diode horizontal direction.
Optionally, described each bar raceway groove has identical doping content, and the electromotive force of every raceway groove is described photoelectricity two pole
The maximum dopant concentration of pipe horizontal direction.
Additionally, the present invention also proposes a kind of cmos image sensor manufacture method, including forming photodiode and dividing
Not Xing Cheng PMOS and NMOS, wherein, including: by forming the shallow dopant ion injection technology during MOS transistor, at photoelectricity
Diode forms raceway groove so that being perpendicular on axial horizontal direction at described photodiode, described raceway groove has maximum
Doping content.
Optionally, described by forming the shallow dopant ion injection technology during MOS transistor in the photodiode
Formation raceway groove includes: arrange the region needing to form raceway groove in photodiode；When carrying out shallow dopant ion injection technology step,
Set channel region is carried out ion implanting, thus forms described raceway groove in the photodiode.
Optionally, described shallow dopant ion is injected to NLDD.
The invention have the benefit that this cmos image sensor improves photodiode to photoelectronic collection energy
Power, it is possible to more effectively transfer photoelectron collected by photodiode, and this manufacture method is sufficiently used existing
Technology, on the premise of not changing existing processing step, improves photoelectronic transfer rate.
Accompanying drawing explanation
Fig. 1 is the structural representation of traditional cmos image sensor；
Fig. 2 is the generalized section of a kind of embodiment of cmos image sensor of the present invention；
Fig. 3 is the potential energy diagram that cmos image sensor of the present invention a kind of embodiment cross-section structure is corresponding；
Fig. 4 is the schematic flow sheet of a kind of embodiment of cmos image sensor manufacture method of the present invention.
Detailed description of the invention
Cmos image sensor provided by the present invention, by novel photoelectric diode structure, improves photoelectricity two pole
Pipe, to photoelectronic capacity gauge, not only increases photoelectronic diffusion velocity, decreases the light being trapped in photodiode
Electron amount such that it is able to realize the transfer of more efficiently photoelectron, improve the image product of cmos image sensor further
Matter, performance and resolution.Additionally, present invention also offers the manufacture method of a kind of cmos sensor, it is possible to existing not changing
On the premise of having processing step, it is achieved above-mentioned CMOS structure, thus it is sufficiently used existing Technology, saves and produce into
This.
Below in conjunction with specific embodiments and the drawings, cmos image sensor of the present invention and preparation method thereof is carried out in detail
Illustrate.
In one embodiment, cmos image sensor of the present invention includes at least photodiode, described photoelectricity two pole
Pipe, including at least a raceway groove, is perpendicular on axial horizontal direction at described photodiode, and described channel region has
Big doping content.Concrete, the doping content of described raceway groove can be more than the doping content in this other region of photodiode.
Specifically, with reference to Fig. 2, in a kind of detailed description of the invention of cmos image sensor of the present invention, it at least wraps
Containing photodiode 200, floating diffusion region 202 and connection photodiode 200 and the transmission transistor of floating diffusion region 202
201.Wherein, described photodiode 200 is including at least a raceway groove 210, and the doping content of described raceway groove 210 is N2, and
This doping content N2 is more than doping content N1 in other region in photodiode 200.
In normal operation, photodiode 200 produces electron hole pair, these electron holes under illumination condition
Separating under the effect of built in field, photoelectron is collected in the n district of photodiode 200.In electronic transmission process,
In the case of photodiode 200 does not exist raceway groove 210, when the whole light of electrons cross away from transfering transistor 201 grid
During the length of electric diode 200 arrives transfering transistor 201 and is transferred to floating diffusion region 202, photoelectricity two pole
Pipe 200 is generally of the highest resistance, particularly when photodiode 200 length is the biggest, and the movement in photodiode 200
Electric current becomes the restriction of electron transfer.When having raceway groove 210 in photodiode 200, and its doping content N2 is more than photoelectricity two
During doping content N1 in pole pipe 200, with reference to Fig. 3, raceway groove 210 is being perpendicular to the horizontal direction of the axial S1 of photodiode 200
On there is the highest electromotive force, thus formed on the horizontal direction of photodiode 200 and be perpendicular to axial S1 and point to raceway groove 210
Outside built in field E.Under the effect of built in field E, the electronics in photodiode 200, it is particularly in photoelectricity two pole
Away from the electronics of transfering transistor 201 position in pipe 200, it will produce the motion towards raceway groove 210.Owing to raceway groove 210 is at light
There is on the horizontal direction of electric diode 200 the highest electromotive force, then can be at one by the electronics collected by the electric field of raceway groove 210
Low-resistance raceway groove flows to transfering transistor 201, thus accelerates its transmission speed.
Being not difficult to find out, owing to photodiode 200 has raceway groove 210, and this raceway groove 210 is at the horizontal stroke of photodiode 200
Be upwardly formed maximum potential region to side, effectively photoelectron is concentrated to channel region and make under the effect of driving electric field its to
Transfering transistor 201 direction to move, thus decrease the photoelectron quantity being trapped in photodiode 200, also cut
Weak photoelectron transfer velocity is affected due to the decay of driving electric field, alleviate the problem even avoiding picture delay.
Wherein, the doping type of described raceway groove 210 can be N-shaped, and can require to determine the position of described raceway groove according to design.
Especially, described raceway groove 210 can be located in the middle of photodiode 200 so that photodiode 200 is with this raceway groove 210 for axle pair
Claim distributed architecture.
In other embodiments, photodiode 200 may also include a plurality of raceway groove.Wherein, at photodiode 200
On horizontal direction, each bar channel region can have identical doping content, it is possible to is respectively provided with different doping contents；When described
When a plurality of raceway groove has identical doping content, the doping content of each channel region is on the horizontal direction of photodiode 200
Maximum dopant concentration；When each bar channel region is respectively provided with different doping contents, the doping content of every raceway groove is more than
The doping content of non-channel region on photodiode 200 horizontal direction, and at least a part of which has the doping of a channel region dense
Degree maximum is the doping content maximum on photodiode 200 horizontal direction.In a specific embodiment, duty
Under, described a plurality of raceway groove can have identical electromotive force, it is possible to has different electromotive forces.
Additionally, present invention also offers a kind of cmos image sensor manufacture method, including formed photodiode and
Form PMOS transistor and nmos pass transistor respectively, wherein, the most also include: shallow mixed by formed during MOS transistor
Heteroion injection technology, forms raceway groove in the photodiode so that be perpendicular to axial horizontal side at described photodiode
Upwards, described channel region has the doping content of maximum.
Specifically, can be by the N-shaped shallow dopant ion injection technology step during forming nmos pass transistor, at light
Electric diode is formed the raceway groove with N-shaped doping.
In specific implementation process, with reference to Fig. 4, this cmos image sensor manufacture method comprises the steps that
Step S1, forms the photodiode with conventional structure；
Step S2, arranges the region needing to form raceway groove in photodiode；
Step S3, when carrying out shallow dopant ion injection technology step, carries out ion implanting to set channel region,
Thus form raceway groove in the photodiode.
In current Conventional process steps, N-shaped shallow dopant ion injection technology step be formed in NMOS common and not
One of step that can or lack.Utilize the N-shaped shallow dopant ion injection technology forming NMOS, to the setting formed in photodiode
Region carries out ion implanting, gives its ion implanting type set in advance and the technological parameter such as ion implantation angle and energy
To retain, owing to only the setting regions of photodiode being injected, so that the doping content of injection zone changes
Become, and then change its electromotive force, be formed at the channel region on photodiode horizontal direction with maximum potential.
In specific implementation process, according to design requirement, the quantity and region that need to form raceway groove can be set.Example
As, described raceway groove can be located in the middle of photodiode so that this photodiode is with described raceway groove for axial symmetry distributed architecture.Again
Such as, a plurality of channel region can be set in the photodiode；Wherein, on the horizontal direction of this photodiode, can make each
Bar channel region can have identical doping content, it is possible to makes it be respectively provided with different doping contents；When described a plurality of raceway groove
When having identical doping content, the doping content of each channel region is that the maximum doping on the horizontal direction of photodiode is dense
Degree；When each bar channel region is respectively provided with different doping contents, the doping content of every raceway groove is horizontal more than photodiode
The doping content of non-channel region on direction, and at least a part of which has the doping content maximum of a channel region to be photoelectricity two
Maximum dopant concentration on the pipe horizontal direction of pole.
The sequencing of processing step need not being adjusted, extra processing step or mould and also need not be increased
On the premise of need not recalculating technological parameter, above-mentioned cmos image sensor manufacture method can be at photodiode
Middle realization has the channel region of maximum potential on horizontal direction such that it is able to photoelectron is concentrated to described channel region effectively
Territory also makes it move towards transfering transistor direction under the effect of driving electric field so that photodiode can more have
Photoelectron is collected on effect ground, alleviates the problem even avoiding picture delay, saves production cost.
Those skilled in the art will be understood that in the respective embodiments described above, such as, form photodiode, form PMOS
The not inventive concept to cmos image sensor manufacture method of the present invention that implements with step with techniques such as NMOS causes
Limit, above-mentioned each processing step can use but be not limited to existing Conventional process parameters, raw material and equipment.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the method for the disclosure above and technology contents to this
Bright technical scheme makes possible variation and amendment, therefore, every content without departing from technical solution of the present invention, according to the present invention
Technical spirit any simple modification, equivalent variations and modification that above example is made, belong to technical solution of the present invention
Protection domain.
Claims (9)
1. a cmos image sensor, at least includes photodiode, it is characterised in that at least wrap in described photodiode
Containing a raceway groove, and being perpendicular on axial horizontal direction at described photodiode, described raceway groove has maximum dopant concentration；
Described raceway groove is positioned in the middle of described photodiode so that described photodiode is distributed knot axisymmetricly about described raceway groove
Structure.
2. cmos image sensor as claimed in claim 1, it is characterised in that the electromotive force of described raceway groove is higher than described photoelectricity two
The electromotive force in other region in the pipe of pole.
3. cmos image sensor as claimed in claim 1, it is characterised in that described raceway groove is N-shaped doping.
4. cmos image sensor as claimed in claim 1, it is characterised in that described photodiode comprises a plurality of raceway groove,
And on the horizontal direction of described photodiode, at least a raceway groove has maximum dopant concentration.
5. cmos image sensor as claimed in claim 4, it is characterised in that it is dense that described each bar raceway groove has different doping
Degree, and the doping content of every raceway groove is more than the doping content of non-channel region on described photodiode horizontal direction.
6. cmos image sensor as claimed in claim 4, it is characterised in that it is dense that described each bar raceway groove has identical doping
Degree, and the maximum dopant concentration that the electromotive force of every raceway groove is described photodiode horizontal direction.
7. a cmos image sensor manufacture method, including forming photodiode and forming PMOS and NMOS respectively, its
It is characterised by, including: by the shallow dopant ion injection technology during formation MOS transistor, formed in the photodiode
Raceway groove so that being perpendicular on axial horizontal direction at described photodiode, described raceway groove has maximum dopant concentration；Described
Raceway groove is positioned in the middle of described photodiode so that described photodiode is about described raceway groove distributed architecture axisymmetricly.
8. cmos image sensor manufacture method as claimed in claim 7, it is characterised in that described by forming MOS crystal
Shallow dopant ion injection technology during pipe forms raceway groove in the photodiode and includes: arranges and needs in photodiode to be formed
The region of raceway groove；When carrying out shallow dopant ion injection technology step, set channel region is carried out ion implanting, thus
Form described raceway groove in the photodiode.
9. cmos image sensor manufacture method as claimed in claim 7, it is characterised in that described shallow dopant ion is injected to
NLDD。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110187406.1A CN102222681B (en) | 2011-07-05 | Cmos image sensor and manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110187406.1A CN102222681B (en) | 2011-07-05 | Cmos image sensor and manufacture method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102222681A CN102222681A (en) | 2011-10-19 |
| CN102222681B true CN102222681B (en) | 2016-12-14 |
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| US5940711A (en) * | 1995-09-29 | 1999-08-17 | Stmicroelectronics, S.R.L. | Method for making high-frequency bipolar transistor |
| CN101388402A (en) * | 2007-09-14 | 2009-03-18 | 三星Sdi株式会社 | Organic light emitting display and method of manufacturing the same |
| CN101447527A (en) * | 2007-11-30 | 2009-06-03 | Oki半导体株式会社 | Method of producing photodiode and the photodiode |
| CN101567337A (en) * | 2009-05-27 | 2009-10-28 | 上海宏力半导体制造有限公司 | CMOS image sensor and preparation method thereof |
| CN102097442A (en) * | 2009-12-15 | 2011-06-15 | 上海华虹Nec电子有限公司 | Cmos image sensor and manufacturing method thereof |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5940711A (en) * | 1995-09-29 | 1999-08-17 | Stmicroelectronics, S.R.L. | Method for making high-frequency bipolar transistor |
| CN101388402A (en) * | 2007-09-14 | 2009-03-18 | 三星Sdi株式会社 | Organic light emitting display and method of manufacturing the same |
| CN101447527A (en) * | 2007-11-30 | 2009-06-03 | Oki半导体株式会社 | Method of producing photodiode and the photodiode |
| CN101567337A (en) * | 2009-05-27 | 2009-10-28 | 上海宏力半导体制造有限公司 | CMOS image sensor and preparation method thereof |
| CN102097442A (en) * | 2009-12-15 | 2011-06-15 | 上海华虹Nec电子有限公司 | Cmos image sensor and manufacturing method thereof |
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