CN102222485A - Voltage stabilizing circuit module with temperature compensation function - Google Patents
Voltage stabilizing circuit module with temperature compensation function Download PDFInfo
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Abstract
A voltage stabilizing circuit module with temperature compensation comprises a temperature sensing unit, a voltage generating unit and a pixel voltage stabilizing unit. The temperature sensing unit outputs a temperature signal according to the ambient temperature. The voltage generating unit outputs corresponding grid driving voltage and picture reference voltage according to the temperature signal. The pixel voltage stabilizing unit receives the picture reference voltage, limits the level of the picture reference voltage according to a limit voltage, and outputs at least one pixel driving voltage which is not sensitive to temperature.
Description
Technical field
The invention relates to a kind of mu balanced circuit module, especially a kind ofly can export gate drive voltage simultaneously with temperature effect, and the mu balanced circuit module of temperature independent pixel drive voltage.
Background technology
Along with the thin film transistor (TFT) manufacturing technology is progressive fast, therefore advantages such as LCD is frivolous owing to having possessed, power saving, radiationless line are applied in the various electronic products such as notebook computer panel, computer screen, TV, mobile phone in large quantities.Film liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT-LCD) be to utilize thin film transistor (TFT) (Thin Film Transistor, TFT) a kind of display device that is made, its main principle of operation is with the galvanism liquid crystal molecule, produces point, line, surface and cooperates the back fluorescent tube to constitute picture.
Specifically, film liquid crystal display is to pour into one deck liquid crystal (Liquid Crystal) in the middle of two sheet glass substrates.The glass substrate on upper strata can be coated with the glass (or claiming colored filter) of intensive alternate red, green, blue three looks, and the glass substrate of lower floor then has transistor to be embedded in.Dispose a backlight in addition after having the glass substrate of transistor circuit.Therefore, when applying voltage drive transistor, electric current produces electric field change by transistor, makes that the liquid crystal between two sheet glass substrates begins to rotate, and controls the number of backlight light penetration by the rotation of liquid crystal.When light penetration colored filter (Color Filter), the film liquid crystal panel promptly can produce color change and demonstrate image.
In general, in active-matrix LCD (Active Matrix Liquid Crystal Display), all can have a TFT on each pixel (Pixel), its grid (Gate) is connected to the horizontal direction sweep trace, drain electrode (Drain) is connected to the data line of vertical direction, and source electrode (Source) then is connected to pixel electrode.When applying enough positive voltages on a certain the sweep trace in the horizontal direction, can make that all TFT open on this line, pixel electrode on this line can be connected with the data line of vertical direction at this moment, and the video voltage on the data line is write in the pixel, control the penetrability of different liquid crystal by this, and then reach the effect of control color.
At present, this kind driving circuit can pass through array base palte type Driving technique (Gate Driver on Array, GOA), directly gate driver circuit (Gate driver ICs) is produced on array (Array) substrate, with the chip for driving that replaces making by external silicon.This kind The Application of Technology can be embodied directly in around the panel, reduces production process, and reduces cost of products.Yet, it should be noted that, this technical relation is to the problem of processing procedure aspect, that is to say, when driving circuit under cold-starting and normal temperature start, the two required gate drive voltage is also inequality, if with the driving voltage of grid according to one of them, then can cause meaningless power dissipation, or be the problem that transistor can't drive.
If consider above problem, and when selecting dynamically along with environment temperature the modulation grid driving voltage, will have influence on the magnitude of voltage that drives pixel electrode in the lump.In the case, when the driving voltage of each pixel is affected and when changing, will make the angle imbalance that liquid crystal rotates, and then cause the distortion of panel display color.Therefore, considering under the situation of environment temperature how on gate drive voltage and panel display color, to obtain a preferable balance, the real problem that presses for solution for those skilled in the art at present.
Summary of the invention
In view of more than, the invention relates to a kind of mu balanced circuit module, when being applied to film liquid crystal display, can take into account " gate drive voltage is along with temperature dynamic changes " with temperature compensation, and the demand of " the normal display color of panel ", use the problem that known technology exists that solves.
The invention relates to a kind of mu balanced circuit module, comprising: a temperature sensing unit, a voltage generation unit and a pixel voltage stabilization element with temperature compensation.Temperature sensing unit is exported a temperature signal according to an environment temperature.The voltage generation unit is exported corresponding a gate drive voltage and a picture reference voltage according to this temperature signal.The pixel voltage stabilization element receives this picture reference voltage, and according to behind the level of this picture reference voltage of spacing voltage limit, exports at least one pixel drive voltage.
According to one embodiment of the invention, wherein the pixel voltage stabilization element comprises a voltage stabilizing separation circuit and a pixel bleeder circuit.The voltage stabilizing separation circuit receives the picture reference voltage, and with after the spacing voltage pressure limiting, output one and the noninductive gamma applied voltage of temperature.The pixel bleeder circuit receives the gamma applied voltage, and is at least one pixel drive voltage with gamma applied voltage dividing potential drop.
According to one embodiment of the invention, wherein gamma applied voltage and pixel drive voltage are all irrelevant with environment temperature.
According to one embodiment of the invention, wherein the voltage generation unit comprises a power chip, a booster circuit and a voltage-multiplying circuit.Power chip is exported a controlled variable according to the temperature signal of temperature sensing unit output.Booster circuit is according to this controlled variable, and voltage signal is switched in output one.Voltage-multiplying circuit receives this switched voltage signal, and carries out voltage charging according to this switched voltage signal, with the output gate drive voltage.
According to one embodiment of the invention, wherein the voltage stabilizing separation circuit can comprise one first electric capacity, one first resistance, one first Zener diode, one second electric capacity and one the 3rd electric capacity.First end of first electric capacity connects picture reference voltage, the second end ground connection of first electric capacity.First end of first resistance connects the picture reference voltage, and second end of first resistance connects the gamma applied voltage.First end of first Zener diode connects second end of first resistance, the second end ground connection of first Zener diode.Second electric capacity and common second end that is connected first resistance of first end of the 3rd electric capacity, the second end ground connection of second electric capacity and the 3rd electric capacity.
According to another embodiment of the present invention, wherein the voltage stabilizing separation circuit also can comprise one the 4th electric capacity, one second resistance, one the 3rd resistance, one the 4th resistance and one second Zener diode.First end of the 4th electric capacity connects picture reference voltage, the second end ground connection of the 4th electric capacity.First end of second resistance connects the picture reference voltage, and second end of second resistance connects the gamma applied voltage.First end of second Zener diode connects second end of second resistance, the second end ground connection of second Zener diode.First end of the 3rd resistance connects second end of second resistance, and first end of the 4th resistance connects second end of the 3rd resistance, the second end ground connection of the 4th resistance.
Be the mu balanced circuit module that proposes with, the present invention with temperature compensation, can be by the voltage stabilizing separation circuit, change the picture reference voltage relevant and be the not pixel drive voltage of temperature influence with environment temperature.By this, use the present invention and have the mu balanced circuit module of temperature compensation when film liquid crystal display, although under different environment temperatures, film liquid crystal display all can drive array base palte under the situation that does not produce excessive power drain, and the problem of the known color distortion of preventing simultaneously.
More than relevant for description of contents of the present invention, with following embodiment be in order to demonstration with explain spirit of the present invention and principle, and provide patent claim of the present invention further to explain.About feature of the present invention, the real work and effect, cooperate now graphicly to be described in detail as follows do preferred embodiment.
Description of drawings
The circuit block diagram of Fig. 1 for having the mu balanced circuit module of temperature compensation according to the embodiment of the invention.
Fig. 2 is the internal circuit synoptic diagram according to the voltage generation unit of Fig. 1.
Fig. 3 A is the circuit diagram according to the voltage stabilizing separation circuit of the embodiment of the invention.
Fig. 3 B is the circuit diagram of voltage stabilizing separation circuit according to another embodiment of the present invention.
Fig. 4 is for being connected to the circuit block diagram of gain circuitry according to the mu balanced circuit module of the embodiment of the invention.
Fig. 5 A is the circuit diagram according to the gain circuitry of the embodiment of the invention.
Fig. 5 B is the circuit diagram of gain circuitry according to another embodiment of the present invention.
Fig. 6 A is according to mu balanced circuit module shown in Figure 2, carries out the experimental data figure of emulation at normal temperatures.
Fig. 6 B is according to mu balanced circuit module shown in Figure 2, carries out the experimental data figure of emulation at low temperatures.
[main element label declaration]
100 temperature sensing units, 200 voltage generation units
202 power chips, 204 booster circuits
206 voltage-multiplying circuits, 300 pixel voltage stabilization elements
302 voltage stabilizing separation circuits, 304 pixel bleeder circuits
400 gain circuitries
Embodiment
Below in embodiment, be described in detail detailed features of the present invention and advantage, its content is enough to make any those skilled in the art to understand technology contents of the present invention and implements according to this, and according to the disclosed content of this instructions, claim and graphic, any those skilled in the art can understand purpose and the advantage that the present invention is correlated with easily.
The circuit block diagram (circuit block diagram) of Fig. 1 for having the mu balanced circuit module of temperature compensation according to the embodiment of the invention, this kind mu balanced circuit module is suitable for driving in the array basal plate type that (Gate Driver on Array GOA) produces the pixel drive voltage of at least one and temperature noninductive (temperature-independent) on the substrate.And the mu balanced circuit module can be simultaneously along with environment temperature, and the gate drive voltage on the dynamic modulation substrate is to take into account power consumption and the demand of exporting normal color on the panel.Pixel drive voltage in the present embodiment refers in the film liquid crystal display, is used for driving pixel electrode, with the voltage of control output color.And noninductive with temperature, what refer to then is the absolute voltage value that does not change with environment temperature.
As shown in Figure 1, the mu balanced circuit module includes a temperature sensing unit 100, a voltage generation unit 200 and a pixel voltage stabilization element 300.Temperature sensing unit 100 is in order to the testing environment temperature, and according to different environment temperatures, the temperature signal V that output is corresponding
T Voltage generation unit 200 is in order to receive temperature signal V
T, and output is corresponding to temperature signal V
TGate drive voltage V
GWith picture reference voltage AVDD.This shows that the mu balanced circuit module of present embodiment can be controlled gate drive voltage V via temperature sensing unit 100 and voltage generation unit 200
GWith the magnitude of voltage of picture reference voltage AVDD, it can dynamically be changed along with environment temperature.
Pixel voltage stabilization element 300 is in order to receive picture reference voltage AVDD, and the continuous level that limits picture reference voltage AVDD with a spacing voltage (being detailed later), after being limited with voltage level, be output as at least one pixel drive voltage V at picture reference voltage AVDD
GAMMAIn one embodiment, 300 output pixel driving voltages of pixel voltage stabilization element V
GAMMANumber can be one or more voltage, need decide on the pixel transistor number that has in the film liquid crystal display, be not in order to limit invention scope of the present invention.
Fig. 2 is the internal circuit synoptic diagram according to the voltage generation unit of Fig. 1, as seen from Figure 2, voltage generation unit 200 comprises a power chip (Power IC) 202, one booster circuit (Boost Circuit) 204 and one voltage-multiplying circuit (Charge Pumper) 206.Wherein, power chip 202 receives the temperature signal V of temperature sensing unit 100 outputs
T, and export a controlled variable V
X, with the control radix (radix) of decision booster circuit 204.Booster circuit 204 is according to controlled variable V
XWith a voltage source V
In, voltage signal V is switched in output one
SAccording to one embodiment of the invention, this switching voltage signal V
SBe one to have the switching signal (switching signal) of switch conduction cycle (duty ratio).Therefore, receive switched voltage signal V when voltage-multiplying circuit 206
SAfter, voltage-multiplying circuit 206 can be according to switched voltage signal V
SSwitch periods, carry out discharging and recharging of voltage, to export the final gate drive voltage V that drives usefulness for transistor gate
GBy this, the voltage generation unit 200 that the present invention proposes utilizes the dynamic change of temperature sensing unit 100 detection ambient temperatures, to change the switched voltage signal V that power chip 202 is exported for the control radix and the booster circuit 204 of booster circuit 204
S, and then reach gate drive voltage V
GThe purpose that can dynamically adjust along with ambient temperature.
Say further, suppose voltage generation unit 200 when environment temperature is a preset temperature (for example being set at 25 degree), the gate drive voltage V that can export
GIt is a default gate drive voltage.So, drop to when being lower than this preset temperature when temperature sensing unit 100 senses environment temperature, power chip 202 can begin to reduce the controlled variable V of booster circuit 204
X, to improve the switched voltage signal V of booster circuit 204 outputs
S, by this, voltage-multiplying circuit 206 exportable is higher than the gate drive voltage signal V of this default gate drive voltage
GOn the contrary, when the environment temperature that is sensed when temperature sensing unit 100 is higher than this preset temperature, 202 controlled variable V that can improve booster circuit 204 of power chip
X, to reduce the switched voltage signal V of booster circuit 204 outputs
S, by this, voltage-multiplying circuit 206 exportable is lower than the gate drive voltage signal V of this default gate drive voltage
GBy this kind framework, the voltage generation unit 200 that the present invention proposes can be reached along with environment temperature dynamic modulation gate drive voltage signal V under the prerequisite that does not increase circuit complexity (complexity)
GPurpose.
Then, below how the picture reference voltage AVDD relevant with environment temperature is converted to and the irrelevant pixel drive voltage V of environment temperature for elaborating the present invention
GAMMA, please in the lump referring to Fig. 1, Fig. 3 A and Fig. 3 B.As shown in fig. 1, pixel voltage stabilization element 300 comprises a voltage stabilizing separation circuit 302 and a pixel bleeder circuit 304.Wherein, voltage stabilizing separation circuit 302 is in order to receiving this picture reference voltage AVDD relevant with environment temperature, and with behind its level of spacing voltage limit, is converted to a gamma applied voltage AVDD_0, and gamma applied voltage AVDD_0 and environment temperature are irrelevant.The internal circuit synoptic diagram of relevant this voltage stabilizing separation circuit 302 is asked for an interview Fig. 3 A and Fig. 3 B, is respectively two kinds of enforcement aspects of the voltage stabilizing separation circuit 302 that proposes according to the present invention.
At first, as shown in Figure 3A, voltage stabilizing separation circuit 302 can comprise one first capacitor C 1, one second capacitor C 2, one the 3rd capacitor C 3, one first resistance R 1 and one first Zener diode D1.Wherein, first end of first capacitor C 1 connects picture reference voltage AVDD, the second end ground connection of first capacitor C 1.First end of first resistance R 1 connects picture reference voltage AVDD, and second end of first resistance R 1 connects first end of the first Zener diode D1, the second end ground connection of the first Zener diode D1.Second capacitor C 2 and the 3rd capacitor C 3 are parallel with one another, and its first end connects gamma applied voltage AVDD_0, its second end common ground jointly.Therefore, voltage stabilizing separation circuit 302 passes through the spacing voltage of the Zener voltage (Zener Voltage) of the first Zener diode D1 as picture reference voltage AVDD, makes voltage stabilizing separation circuit 302 have autoregulation.In other words, when picture reference voltage AVDD dynamically changes along with environment temperature, the deviser only needs the suitably resistance of coupling first resistance R 1, can make gamma applied voltage AVDD_0 remain unchanged (meaning promptly do not change, and only relevant) with the Zener voltage of the first Zener diode D1 with environment temperature.
Similarly, Fig. 3 B implements aspect according to the another kind of the voltage stabilizing separation circuit of the embodiment of the invention, and voltage stabilizing separation circuit 302 can comprise one the 4th capacitor C 4, one second resistance R 2, one the 3rd resistance R 3, one the 4th resistance R 4 and one second Zener diode D2.Wherein, first end of the 4th capacitor C 4 connects picture reference voltage AVDD, the second end ground connection of the 4th capacitor C 4.First end of second resistance R 2 connects picture reference voltage AVDD, and second end of second resistance R 2 connects first end of the second Zener diode D2, the second end ground connection of the second Zener diode D2.First end of the 3rd resistance R 3 connects second end of the gamma applied voltage AVDD_0 and second resistance R 2, and second end of the 3rd resistance R 3 connects first end of the 4th resistance R 4, and the second end ground connection of the 4th resistance R 4.By this, voltage stabilizing separation circuit 302 can pass through the spacing voltage of the Zener voltage (Zener Voltage) of the second Zener diode D2 as picture reference voltage AVDD equally, makes voltage stabilizing separation circuit 302 have autoregulation.In other words, when picture reference voltage AVDD dynamically changes along with environment temperature, the deviser only needs the suitably resistance of coupling second resistance R 2, can make gamma applied voltage AVDD_0 remain unchanged (meaning promptly do not change, and only relevant) with the Zener voltage of the second Zener diode D2 with environment temperature.
Therefore, the voltage stabilizing separation circuit 302 that proposes according to the present invention can utilize the Zener voltage of Zener diode, as the spacing voltage of restriction picture reference voltage AVDD level, with when environment temperature changes, still produce and the noninductive gamma applied voltage AVDD_0 of temperature.Afterwards, pixel bleeder circuit 304 can receive this gamma applied voltage AVDD_0, and is one or more pixel drive voltage V with gamma applied voltage AVDD_0 dividing potential drop
GAMMABy this, pixel drive voltage V
GAMMAAlso irrelevant with environment temperature.In one embodiment, pixel bleeder circuit 304 can be for example resistance or capacitive bleeder circuit, so that gamma applied voltage AVDD_0 is assigned on the driving voltage that each pixel electrode can be used in the film liquid crystal display further.Therefore, the pixel drive voltage V of each pixel electrode on panel
GAMMAWhen all temperature independent, film liquid crystal display is temperature influence not naturally, and still has normal color output picture.
Secondly, see also Fig. 4, the mu balanced circuit module that the present invention proposes can be connected to a gain circuitry 400 in addition, and gain circuitry 400 receives picture reference voltage AVDD, and picture reference voltage AVDD amplification is output as a upper plate reference voltage V
COMIn simple terms, upper plate reference voltage V
COMMainly can be used as applied voltages such as exporting the picture load on the film liquid crystal display, therefore can have certain tolerance value (tolerance) along with the temperature transition.Fig. 5 A and Fig. 5 B are two kinds of enforcement aspects according to the gain circuitry of the embodiment of the invention, yet the embodiment of gain circuitry 400 does not exceed with this two diagram.The present invention is employed component number or kind in the limiting gain circuit 400 not, and those skilled in the art are when can optionally designing it voluntarily, so do not give unnecessary details at this.Wherein, the component symbol R1 to R10 in the icon represents resistance, and C1 to C4 represents electric capacity, and COM1 to COM3 represents comparer.
Then, the present invention also proposes the analysis of experimental data figure of actual emulation, as the following description.Fig. 6 A and Fig. 6 B are according to mu balanced circuit module shown in Figure 2, respectively the experimental data figure of emulation under normal temperature and low temperature.By Fig. 6 A as seen, if at normal temperatures, gamma applied voltage AVDD_0 be 6.8 volts (Voltage, V) and voltage-multiplying circuit 206 when having basic superposition voltage 2.5V, the controlled variable V of booster circuit 204
X=8V, picture reference voltage AVDD=7.4V, and gate drive voltage signal V
G=18V.And when environment temperature decline, shown in Fig. 6 B, then visible gamma applied voltage AVDD_0 still remains unchanged and is 6.8V, is not subjected to Temperature Influence.When voltage-multiplying circuit 206 has basic superposition voltage 2.5V, this moment booster circuit 204 controlled variable V
XRise to 11V, picture reference voltage AVDD=10.4V, and gate drive voltage signal V
GRise to 24V.
Be with, in sum, the mu balanced circuit module that the present invention proposes, not only can be by temperature sensing unit and voltage generation unit, output can also can be exported pixel drive voltage not influenced by ambient temperature by the pixel voltage stabilization element simultaneously along with the dynamic gate drive voltage of adjusting of environment temperature.By this, the mu balanced circuit module application that proposes as the present invention is during at film liquid crystal display, and liquid crystal panel still can normally start at low temperatures.And, considering under the temperature effect that the mu balanced circuit module can be exported the gate drive voltage relevant with temperature simultaneously, and temperature independent pixel drive voltage, to take into account film liquid crystal display in power consumption and the balance of exporting on the normal color.
Though the present invention discloses as above with aforesaid preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; in not breaking away from spirit of the present invention and scope; when can doing a little change and retouching, therefore scope of patent protection of the present invention must be looked the appended claim scope person of defining of this instructions and is as the criterion.
Claims (10)
1. mu balanced circuit module with temperature compensation comprises:
Temperature sensing unit is according to environment temperature output temperature signal;
The voltage generation unit, according to this temperature signal, gate drive voltage and picture reference voltage that output is corresponding; And
The pixel voltage stabilization element receives this picture reference voltage, behind the level of this pixel voltage stabilization element according to this picture reference voltage of spacing voltage limit, exports at least one pixel drive voltage.
2. the mu balanced circuit module with temperature compensation according to claim 1, wherein this pixel voltage stabilization element comprises:
The voltage stabilizing separation circuit receives this picture reference voltage, and with after this spacing voltage pressure limiting, output gamma applied voltage; And
The pixel bleeder circuit receives this gamma applied voltage, and is this pixel drive voltage with this gamma applied voltage dividing potential drop.
3. the mu balanced circuit module with temperature compensation according to claim 2, wherein this gamma applied voltage and this environment temperature are irrelevant.
4. the mu balanced circuit module with temperature compensation according to claim 2, wherein this pixel drive voltage and this environment temperature are irrelevant.
5. the mu balanced circuit module with temperature compensation according to claim 2, wherein this voltage stabilizing separation circuit comprises:
First electric capacity, first end of this first electric capacity connects this picture reference voltage, the second end ground connection of this first electric capacity;
First resistance, first end of this first resistance connects this picture reference voltage, and second end of this first resistance connects this gamma applied voltage;
First Zener diode, first end of this first Zener diode connects second end of this first resistance, the second end ground connection of this first Zener diode;
Second electric capacity, first end of this second electric capacity connects second end of this first resistance, the second end ground connection of this second electric capacity; And
The 3rd electric capacity, first end of the 3rd electric capacity connects second end of this first resistance, the second end ground connection of the 3rd electric capacity.
6. the mu balanced circuit module with temperature compensation according to claim 2, wherein this voltage stabilizing separation circuit comprises:
The 4th electric capacity, first end of the 4th electric capacity connects this picture reference voltage, the second end ground connection of the 4th electric capacity;
Second resistance, first end of this second resistance connects this picture reference voltage, and second end of this second resistance connects this gamma applied voltage;
Second Zener diode, first end of this second Zener diode connects second end of this second resistance, the second end ground connection of this second Zener diode;
The 3rd resistance, first end of the 3rd resistance connects second end of this second resistance; And
The 4th resistance, first end of the 4th resistance connects second end of the 3rd resistance, the second end ground connection of the 4th resistance.
7. the mu balanced circuit module with temperature compensation according to claim 1 also comprises gain circuitry, and this gain circuitry receives this picture reference voltage, is output as the upper plate reference voltage so that this picture reference voltage is amplified.
8. the mu balanced circuit module with temperature compensation according to claim 1, wherein this voltage generation unit comprises:
Power chip, according to this temperature signal, the output controlled variable;
Booster circuit, according to this controlled variable, output switched voltage signal; And
Voltage-multiplying circuit receives this switched voltage signal, and this voltage-multiplying circuit carries out voltage charging according to this switched voltage signal, to export this gate drive voltage.
9. the mu balanced circuit module with temperature compensation according to claim 1, when wherein this environment temperature is preset temperature, this gate drive voltage of this voltage generation unit output is default gate drive voltage, when this environment temperature was lower than this preset temperature, this voltage generation unit output was higher than this gate drive voltage signal of this default gate drive voltage.
10. the mu balanced circuit module with temperature compensation according to claim 1, when wherein this environment temperature is preset temperature, this gate drive voltage of this voltage generation unit output is default gate drive voltage, when this environment temperature was higher than this preset temperature, this voltage generation unit output was lower than this gate drive voltage signal of this default gate drive voltage.
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Also Published As
Publication number | Publication date |
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CN102222485B (en) | 2014-04-09 |
TWI549430B (en) | 2016-09-11 |
TW201240346A (en) | 2012-10-01 |
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