CN102219216A - Preparation method of monatomic thickness nano-silicon ribbons - Google Patents
Preparation method of monatomic thickness nano-silicon ribbons Download PDFInfo
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- CN102219216A CN102219216A CN2011100755760A CN201110075576A CN102219216A CN 102219216 A CN102219216 A CN 102219216A CN 2011100755760 A CN2011100755760 A CN 2011100755760A CN 201110075576 A CN201110075576 A CN 201110075576A CN 102219216 A CN102219216 A CN 102219216A
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Abstract
The invention relates to a preparation method of monatomic thickness nano-silicon ribbons. The method comprises the following steps: step 1, degassing; step 2, cleaning silicon surfaces; step 3, preparing a silver layer with a thickness of 0.5 nm on the clean silicon surfaces through a molecular beam deposition technology; step 4, uniformly distributing silver atoms on the surfaces of the silicon sample; and step 5, heating the sample to 500 DEG C, laying aside for 15 min to reduce the temperature, raising the temperature by 50 DEG C, and repeating above heating and cooling process until all silver atoms are desorbed completely. So the monatomic thickness nano-silicon ribbons are prepared. The preparation method provided by the present invention has the advantages that: the large-area and monatomic thickness nano-silicon ribbons are prepared for the first time; and needed equipment is simple, and industrialization is easy.
Description
Technical field
The present invention relates to a kind of preparation method of silicon ribbon, relate in particular to a kind of preparation method of monatomic thickness nanometer silicon ribbon.
Background technology
Silicon materials are most important semiconductor materials, almost account for more than 95% of whole microelectronic based on the semiconductor material technology of silicon materials, the visible importance of silicon materials in semi-conductor industry.Along with the broad research and the application of nano material, silicon nano material has become people's a main research point.And the nano-silicon carrying material has unique photoelectric characteristic because of quantum effect influence, aspect nano photoelectronic devices and biomedicine field is with a wide range of applications and market outlook.Especially the silicon nanowires of small scale is having extremely important application aspect quantum lead, quantum crystal pipe, the quantum computer.There is serious deficiency in the preparation of low-dimensional silicon nano material at present, how to prepare atomic scale silicon nano belt structure and has great importance for the exploitation of nano-device.
The silicon nano belt of ordinary method preparation at present mainly comprises: catalyzed reaction, laser ablation method, chemical Vapor deposition process etc.These method ubiquity elongate member require high, and as needs vapor phase growth source, catalyzer, hot conditions etc., and growth time is long, the required equipment costliness.The most important thing is that these conventional methods can not prepare the silicon nano belt of monatomic thickness.The applicant is by having prepared the silicon nano belt of the monatomic thickness of big area first to the special processing of silicon face.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of monatomic thickness nanometer silicon ribbon, by adopting at silicon face growth single silver atom, heated sample improves constantly temperature repeatedly, falls until making silver atoms take off absorption fully.Can prepare the silicon nano belt of big area, monatomic thickness.By the monatomic thickness of silicon nano belt that this method is prepared first, the broadband of wall scroll silicon nanowires is 0.7nm～1nm, and thickness is 0.3nm～0.8nm, and width is 0.5nm～5nm.This method has overcome the shortcoming that the traditional preparation process prepared does not go out the silicon nano belt of monatomic thickness.
The present invention is achieved like this, and method steps is:
The first step realizes puncturing to silicon sample by direct supply, and electric current is transferred to 0.5 ampere, places minimum 5 hours, carries out degassing processing;
Second step after the end to be degassed, rose to 1 ampere rapidly with electric current, and the current value when keeping dropping to degasification after 10 seconds repeatedly repeats this process and reduces to 10 up to the chamber internal gas pressure
-10In the holder scope; Then heating current is increased by 0.5 ampere, repeat said process, make the temperature of sample reach 1200 degrees centigrade, realize the cleaning of silicon face until added electric current;
The 3rd step is by the silver layer of molecular beam deposition technology growth 0.5 nanometer thickness on the silicon face of cleaning;
The 4th step, with silver layer cover silicon sample under 400 degree celsius temperature, annealed 30 minutes, make silver atoms be evenly distributed in the surface of silicon sample;
The 5th step was warming up to 500 degrees centigrade with sample, placed and temperature was lowered in 15 minutes, at elevated temperature, temperature was increased by 50 degrees centigrade, repeated this process, adsorbed to fall up to silver atoms is all taken off, thereby realized the preparation of monatomic thickness of silicon nano belt.
Technique effect of the present invention is: one, prepared the monatomic thickness of silicon nano belt of big area first; Its two, required equipment is simple, is easy to industrialization.
Embodiment
The present invention is achieved like this, and method steps is:
The first step realizes puncturing to silicon sample by direct supply, and electric current is transferred to 0.5 ampere, places minimum 5 hours, carries out degassing processing;
Second step after the end to be degassed, rose to 1 ampere rapidly with electric current, and the current value when keeping dropping to degasification after 10 seconds repeatedly repeats this process and reduces to 10 up to the chamber internal gas pressure
-10In the holder scope; Then heating current is increased by 0.5 ampere, repeat said process, make the temperature of sample reach 1200 degrees centigrade, realize the cleaning of silicon face until added electric current;
The 3rd step is by the silver layer of molecular beam deposition technology growth 0.5 nanometer thickness on the silicon face of cleaning;
The 4th step, with silver layer cover silicon sample under 400 degree celsius temperature, annealed 30 minutes, make silver atoms be evenly distributed in the surface of silicon sample;
The 5th step was warming up to 500 degrees centigrade with sample, placed and temperature was lowered in 15 minutes, at elevated temperature, temperature was increased by 50 degrees centigrade, repeated this process, adsorbed to fall up to silver atoms is all taken off, thereby realized the preparation of monatomic thickness of silicon nano belt.
Claims (1)
1. the preparation method of a monatomic thickness nanometer silicon ribbon is characterized in that method steps is:
The first step realizes puncturing to silicon sample by direct supply, and electric current is transferred to 0.5 ampere, places minimum 5 hours, carries out degassing processing;
Second step after the end to be degassed, rose to 1 ampere rapidly with electric current, and the current value when keeping dropping to degasification after 10 seconds repeatedly repeats this process and reduces to 10 up to the chamber internal gas pressure
-10In the holder scope; Then heating current is increased by 0.5 ampere, repeat said process, make the temperature of sample reach 1200 degrees centigrade, realize the cleaning of silicon face until added electric current;
The 3rd step is by the silver layer of molecular beam deposition technology growth 0.5 nanometer thickness on the silicon face of cleaning;
The 4th step, with silver layer cover silicon sample under 400 degree celsius temperature, annealed 30 minutes, make silver atoms be evenly distributed in the surface of silicon sample;
The 5th step was warming up to 500 degrees centigrade with sample, placed and temperature was lowered in 15 minutes, at elevated temperature, temperature was increased by 50 degrees centigrade, repeated this process, adsorbed to fall up to silver atoms is all taken off, thereby realized the preparation of monatomic thickness of silicon nano belt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011100755760A CN102219216A (en) | 2011-03-29 | 2011-03-29 | Preparation method of monatomic thickness nano-silicon ribbons |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011100755760A CN102219216A (en) | 2011-03-29 | 2011-03-29 | Preparation method of monatomic thickness nano-silicon ribbons |
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| CN102219216A true CN102219216A (en) | 2011-10-19 |
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| CN2011100755760A Pending CN102219216A (en) | 2011-03-29 | 2011-03-29 | Preparation method of monatomic thickness nano-silicon ribbons |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282625A (en) * | 2013-07-09 | 2015-01-14 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method of semiconductor structure |
| CN106868580A (en) * | 2017-03-01 | 2017-06-20 | 厦门大学 | A kind of preparation method of the silicon nanobelt based on electrochemical corrosion |
| CN111785953A (en) * | 2020-07-08 | 2020-10-16 | 厦门大学 | Modification method of lithium ion battery silicon negative electrode material |
-
2011
- 2011-03-29 CN CN2011100755760A patent/CN102219216A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282625A (en) * | 2013-07-09 | 2015-01-14 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method of semiconductor structure |
| CN104282625B (en) * | 2013-07-09 | 2017-10-03 | 中国科学院微电子研究所 | A kind of semiconductor structure and its manufacture method |
| CN106868580A (en) * | 2017-03-01 | 2017-06-20 | 厦门大学 | A kind of preparation method of the silicon nanobelt based on electrochemical corrosion |
| CN106868580B (en) * | 2017-03-01 | 2018-12-14 | 厦门大学 | A kind of preparation method of the silicon nanobelt based on electrochemical corrosion |
| CN111785953A (en) * | 2020-07-08 | 2020-10-16 | 厦门大学 | Modification method of lithium ion battery silicon negative electrode material |
| CN111785953B (en) * | 2020-07-08 | 2021-06-11 | 厦门大学 | Modification method of lithium ion battery silicon negative electrode material |
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Application publication date: 20111019 |