CN102214799A - Organic light-emitting diode device - Google Patents

Organic light-emitting diode device Download PDF

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Publication number
CN102214799A
CN102214799A CN2010102509997A CN201010250999A CN102214799A CN 102214799 A CN102214799 A CN 102214799A CN 2010102509997 A CN2010102509997 A CN 2010102509997A CN 201010250999 A CN201010250999 A CN 201010250999A CN 102214799 A CN102214799 A CN 102214799A
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luminescent layer
layer
oled device
electrode
main part
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CN2010102509997A
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周卓辉
周诣杰
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National Tsing Hua University NTHU
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National Tsing Hua University NTHU
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Abstract

The invention relates to an organic light-emitting diode device. The organic light-emitting diode device comprises a substrate, a first electrode, a light-emitting area and a second electrode, wherein the first electrode is arranged above the substrate; the light-emitting area is formed above the first electrode and comprises a plurality of light-emitting layers and at least one clearance layer; the at least one clearance layer is arranged between any two light-emitting layers; each light-emitting layer comprises dye; and the second electrode is arranged above the light-emitting area. Therefore, the organic light-emitting diode device has high color rendering property and high light-emitting efficiency.

Description

Oled device
Technical field
The invention relates to a kind of oled device, refer to a kind of oled device especially with high color rendering.
Background technology
Because Organic Light Emitting Diode (OLED) has: ultralight, super book (thickness can be lower than 1mm), brightness height, visible angle (can reach 170 degree) greatly, not need backlight, low in energy consumption, response speed is fast, definition is high, caloric value is low, anti-seismic performance is excellent, low cost of manufacture, advantage such as flexible, is subjected to attracting attention of all circles' research and industry gradually.
The structure of known Organic Light Emitting Diode as shown in Figure 1, it comprises: a substrate 11, an anode 12, one electric hole implanted layer 13, one electric hole transport layer 14, a luminescent layer 15, an electron transfer layer 16, an electron injecting layer 17 and a negative electrode 18.Wherein, luminescent layer 15 is to be disposed at 16 of electric hole transport layer 14 and electron transfer layers, and the major function of luminescent layer 15 be restriction or control electronics and electric hole effectively in conjunction with and luminous.
At present existing document is pointed out, by multilayer organic layer and luminescent layer being set or using other organic material and luminescent material, with color rendering or the luminous efficiency of improving Organic Light Emitting Diode.Yet the present Organic Light Emitting Diode that develops but can't be with the characteristic of high color rendering and luminous efficiency; And, and cause cost of manufacture to increase if the multilayer organic layer is set and luminescent layer increases process complexity on the contrary.Therefore, with present prior art and the Organic Light Emitting Diode that developed, because of can't having the characteristic of high color rendering and luminous efficiency simultaneously, and complex process causes costing an arm and a leg, so still can't be used to replace normal lighting equipment.
In view of the above, develop a kind of oled device with simple structure in order Organic Light Emitting Diode to be applied on the normal lighting equipment, to need badly at present, it is except having desirable luminous efficiency, more splendid high color rendering can be represented, and then normal lighting equipment can be replaced.
Summary of the invention
Main purpose of the present invention is that a kind of oled device is being provided, and it is by being provided with at least one clearance layer, to represent high color rendering and high-luminous-efficiency.
For reaching above-mentioned purpose, oled device of the present invention comprises: a substrate; One first electrode is to be arranged at this substrate top; One luminous zone is to be arranged at this first electrode top, and this luminous zone comprises a plurality of luminescent layers and at least one clearance layer, wherein this at least one clearance layer be arranged at described luminescent layer times between the two, and described luminescent layer comprises a dyestuff respectively; And one second electrode, be to be arranged at this top, luminous zone.At this, this first electrode and this second electrode can be respectively as the anode and the negative electrodes of this oled device, and its material there is no particular restriction, can be any known anode material commonly used (as tin indium oxide) and cathode material (as LiF/Al).
In view of the above, oled device provided by the present invention is by between any two luminescent layers at least one clearance layer being set, having the desirable luminous efficiency except making oled device, more can representing splendid high color rendering.In addition, because the present invention is provided with clearance layer between luminescent layer, even so only have two-layer luminescent layer in the oled device structure of the present invention, that is, the luminous zone is designed to three-decker, and it still can represent high color rendering and high-luminous-efficiency, in view of the above, compared to known need the oled device of multilayer organic layer and luminescent layer is set, oled device of the present invention have structure can be comparatively simple and technology can be easier advantage.
In oled device of the present invention, be preferably, each clearance layer itself is not luminous, and its material can be respectively organic material and can do selection in rank (HOMO and LUMO) according to material.For example, its HOMO of the material of clearance layer and LUMO energy rank can be between the two adjacent luminescent layers that insert and put this clearance layer.Thus, may command electricity hole and electronics combine and luminous in luminescent layer, and then reach the effect of high color rendering.In addition, the material of clearance layer, its electric hole transmission property is preferably 2x10 -3-6x10 -8Cm 2V -1S -1And in 3.6x10 -5Vcm -1Electric field under, its electron-transporting is preferably 2x10 -3-6x10 -8Cm 2V -1S -1
Therefore, in oled device of the present invention, the material of each clearance layer can be identical or different, can be respectively material of main part, fluorescent dye or its mixture; And preferable TCTA, CBP, 4P-NPD, TPBi, the Alq of being respectively 3Or its mixture.
In addition, oled device of the present invention can more optionally comprise an electric hole transport layer, an electric hole implanted layer, an electron transfer layer or an electron injecting layer.If when this oled device also comprised an electric hole transport layer or an electric hole implanted layer, electric hole transport layer or electric hole implanted layer were to be positioned between first electrode and luminous zone.When if this oled device comprises an electric hole transport layer and an electric hole implanted layer more simultaneously, then electric hole implanted layer and electric hole transport layer are stacking in regular turn on first electrode, making electric hole implanted layer is to be positioned between first electrode and electric hole transport layer, and electric hole transport layer is positioned between first electrode and luminous zone.If when this oled device also comprised an electron transfer layer or an electron injecting layer, electron transfer layer or electron injecting layer were to be positioned between the luminous zone and second electrode.When if this oled device comprises an electron transfer layer and an electron injecting layer more simultaneously, then electron transfer layer and electron injecting layer are stacking in regular turn on the luminous zone, making electron transfer layer is to be positioned between luminous zone and electron injecting layer, and electron injecting layer is to be positioned between the electron transfer layer and second electrode.
In oled device of the present invention, the dyestuff in each luminescent layer can independently be a fluorescent dye, a phosphorescent coloring or its mixture separately.When the dyestuff of this luminescent layer was the mixture of phosphorescent coloring or phosphorescent coloring and fluorescent dye, this luminescent layer was preferably and comprises a material of main part; And when the dyestuff of this luminescent layer was fluorescent dye, then this luminescent layer optionally comprised a material of main part.At this, luminescent layer of the present invention can use any known fluorescent dye or phosphorescent coloring.Illustrate, but the luminous organic material of green light includes, but are not limited to: Ir (ppy) 3, BNE, Alq, DPT, Alq 3, Bebq 2, DMQA, Coumarin 6, Q, NMQ, and Quinacrine etc.; The luminous organic material that can glow includes, but are not limited to: Ir (piq) 2 (acac), DCM-2, TMS-SiPc, DCJTB, and ABTX etc.; But the luminous organic material of blue light-emitting includes, but are not limited to: MDP3FL, DSB, TPAN, DPAN, DPAP, Perylene (C 20H 12), DPVBi, PPD, α-NPD2, β-NPD, TTBND, DCTA, and TDAPTz etc.; The luminous organic material that can send out tangerine light includes, but are not limited to: Ir (2-phq) 3Deng.
In oled device of the present invention, the luminescent layer number of plies in this luminous zone there is no particular restriction, and for example this luminous zone can comprise two to four layers of luminescent layer.Specifically, described luminescent layer can comprise first luminescent layer and second luminescent layer, wherein this first luminescent layer and second luminescent layer can be two adjacent luminescent layers mutually, and clearance layer can be arranged between first luminescent layer and second luminescent layer, and first luminescent layer then is arranged between second luminescent layer and first electrode.Perhaps, described luminescent layer can comprise one first luminescent layer, one second luminescent layer and one the 3rd luminescent layer, wherein first luminescent layer can be adjacent with second luminescent layer, and second luminescent layer can be adjacent with the 3rd luminescent layer, and clearance layer can be arranged between first luminescent layer and second luminescent layer, between second luminescent layer and the 3rd luminescent layer, or first between luminescent layer and second luminescent layer and between second luminescent layer and the 3rd luminescent layer, and first luminescent layer is to be arranged between second luminescent layer and first electrode, and second luminescent layer is to be arranged between first luminescent layer and the 3rd luminescent layer.
In oled device of the present invention, each layer luminescent layer can use identical or different material (comprising the dye well material of main part), and for example first luminescent layer, second luminescent layer and the 3rd luminescent layer can use identical or different material.Be preferably, the dyestuff of first luminescent layer comprises MDP3FL and DSB, and wherein DSB concentration can be the 0-50% of MDP3FL; Second luminescent layer and the 3rd luminescent layer use CBP as material of main part, and its dyestuff comprises Ir (piq) 2 (acac), Ir (2-phq) 3And Ir (ppy) 3, wherein Ir (piq) 2 (acac) content can account for the 0.01-10wt% of this material of main part, Ir (2-phq) 3Content can account for the 0.01-10wt% of this material of main part, and Ir (ppy) 3Content can account for the 0.01-10wt% of this material of main part.
In oled device of the present invention, the material of electric hole implanted layer and electron injecting layer there is no particular restriction, and it can be any known electric hole implanted layer material and electron injecting layer material.In addition, the material of electricity hole transport layer does not also have particular restriction, it can be any known electric hole transport layer material, but be preferably fragrant tertiary amine compound (aromatic tertiary amine) for including at least one trivalent nitrogen atom bond carbon atom and containing an aromatic rings (aromatic ring) at least, wherein aromatic series tertiary amine compound is preferably arylamine (arylamine), as monoarylamine (monarylamine), two arylamine (diarylamine) or triarylamine (triarylamine).On the other hand, the material of electron transfer layer does not also have particular restriction, and it can be any known electric transmission layer material, comprises metal-chelating class oxyquinoline (oxinoid) compound but be preferably, or oxyquinoline (oxine) chelate, as Alq 3
In oled device of the present invention, substrate there is no particular restriction, and it can be any known substrate commonly used, as silicon substrate, glass substrate, quartz base plate or plastic base.
Oled device of the present invention can be bottom-emission type or top emission type.If oled device of the present invention is the bottom-emission type, this substrate is preferably transparent substrates, and first electrode is preferably light transmission conductive layer, and second electrode is preferably opaque conductive layer.If oled device of the present invention is a top emission type, this substrate is preferably light tight substrate, and first electrode is preferably opaque conductive layer, and second electrode is preferably light transmission conductive layer.
Description of drawings
For making the auditor do further understanding and understanding to the object of the invention, technical characterictic and effect thereof, below enumerate the embodiment conjunction with figs., be described in detail as follows, wherein:
Fig. 1 is the schematic diagram of known oled device.
Fig. 2 is the schematic diagram of the oled device of a preferred embodiment of the present invention.
Fig. 3 is the schematic diagram of the oled device of another preferred embodiment of the present invention.
Fig. 4 is the schematic diagram of the oled device of another preferred embodiment of the present invention.
Fig. 5 is the schematic diagram of the oled device of another preferred embodiment of the present invention.
Fig. 6 is the schematic diagram of the oled device of another preferred embodiment of the present invention.
Embodiment
Below be that the personage who has the knack of this technology can understand other advantage of the present invention and effect easily by the content that this specification disclosed by particular specific embodiment explanation embodiments of the present invention.The present invention also can be implemented or be used by other different specific embodiment, and the every details in this specification also can not carried out various modifications and change under the spirit departing from this creation at different viewpoints and application.
Fig. 2 is the oled device schematic diagram of a preferred embodiment of the present invention.Next, will consider the preparation flow that Fig. 2 illustrates the oled device of a preferred embodiment of the present invention in light of actual conditions.
Embodiment 1
At first, provide a substrate 21, its top is provided with one first electrode 22.In present embodiment, substrate 21 is to be a glass substrate, and first electrode 22 is to be the ito anode of 125nm for a thickness.
Then, utilize method of spin coating that the PEDOT:PSS macromolecule mixture is coated on first electrode 22, to form an electric hole implanted layer 23.Then, vacuum evaporation TAPC micromolecule on electric hole implanted layer 23 is to form an electric hole transport layer 24.In present embodiment, the thickness of electric hole transport layer 24 is to be 10nm.
Dark blue photoinitiator dye MDP3FL, sky blue photoinitiator dye DSB are mixed in the THF solvent, behind vacuum drying process, with this mixture as a vapor deposition source, on electric hole transport layer 24, to form one first luminescent layer 251.The concentration of DSB dyestuff is the 3wt% for MDP3FL in present embodiment, and the thickness of first luminescent layer 251 is to be 10nm.
Then, on first luminescent layer 251, form a clearance layer 252.In present embodiment, the thickness of clearance layer 252 is to be 3nm, and the material of clearance layer 252 is to be CBP.
With dark red photoinitiator dye Ir (piq) 2 (acac), tangerine photoinitiator dye Ir (2-phq) 3, green glow dyestuff Ir (ppy) 3And material of main part CBP is mixed in the THF solvent, behind vacuum drying process, with this mixture as a vapor deposition source, on clearance layer 252, to form one second luminescent layer 253.In present embodiment, the concentration of Ir (piq) 2 (acac) dyestuff is the 1wt% for the CBP material of main part, Ir (2-phq) 3The concentration of dyestuff is the 1wt% for the CBP material, and Ir (ppy) 3The concentration of dyestuff is the 3wt% for CBP, and the thickness of second luminescent layer 253 is to be 3nm.
In view of the above, first luminescent layer 251, clearance layer 252 and second luminescent layer 253 promptly constitute the luminous zone 25 in the present embodiment oled device.
Then, utilize vacuum vapour deposition, evaporation Bphen on second luminescent layer 253 is to form the electron transfer layer 26 that a thickness is 15nm.Then, evaporating Al q on electron transfer layer 26 again 3, to form the electron injecting layer 27 that a thickness is 5nm.
At last, form one second electrode 28 again on electron injecting layer 27, wherein, second electrode 28 is to be a LiF/Al electrode.
Via above-mentioned technology, then finish the oled device of present embodiment, it mainly comprises: a substrate 21; One first electrode 22 is to be arranged at this substrate 21 tops; One luminous zone 25, be to be arranged at first electrode, 22 tops, and this luminous zone 25 comprises a plurality of luminescent layers (i.e. first luminescent layer 251 and second luminescent layer 253) and clearance layer 252, wherein this clearance layer 252 is to be arranged between first luminescent layer 251 and second luminescent layer 253, and first luminescent layer 251 is to be arranged between second luminescent layer 253 and first electrode 22, and described luminescent layer 251 and 253 comprises a dyestuff respectively; And one second electrode 28, be to be arranged at 25 tops, luminous zone.At this, the dyestuff of first luminescent layer 251 is to comprise dark blue photoinitiator dye MDP3FL and sky blue photoinitiator dye DSB, and second luminescent layer 253 also comprises a material of main part (CBP), and the dyestuff of its use comprises red dye Ir (piq) 2 (acac), tangerine photoinitiator dye Ir (2-phq) 3And green glow dyestuff Ir (ppy) 3
In addition, the oled device of present embodiment also comprises: an electric hole implanted layer 23 and one electric hole transport layer 24 is repeatedly to place in regular turn on first electrode 22, and is positioned at 25 of first electrode 22 and luminous zones; And an electron transfer layer 26 and an electron injecting layer 27, be repeatedly to place in regular turn on this luminous zone 25, and be positioned at 28 at luminous zone 25 and second electrode.
After the test of 3.3V driven, the oled device of present embodiment can send white light.In brightness is 100cd/m 2Down, luminous efficiency is 4.9Im/W; And be 1000cd/m in brightness 2Down, luminous efficiency is 2.2Im/W.In addition, the white light that oled device sent of present embodiment, its CIE coordinate is (0.35,0.38), and the CRI value is up to 92.
Embodiment 2
The oled device technology of present embodiment is all identical with embodiment 1 with structure, only difference be in, the clearance layer material of present embodiment is to be TCTA.
After the test of 3.5V driven, the oled device of present embodiment can send white light.In brightness is 100cd/m 2Down, luminous efficiency is 12.5Im/W; And be 1000cd/m in brightness 2Down, luminous efficiency is 7.5Im/W.In addition, the white light that oled device sent of present embodiment, its CIE coordinate is (0.43,0.44), and the CRI value is up to 94.
Embodiment 3
The oled device technology of present embodiment is all identical with embodiment 1 with structure, only difference be in, as shown in Figure 3, the luminous zone 25 of present embodiment comprises multilayer first luminescent layer 251, a clearance layer 252 and multilayer second luminescent layer 253 in regular turn.Wherein, the material of each first luminescent layer 251 is all identical, and the material of each second luminescent layer 252 is also identical.
Embodiment 4
The oled device technology of present embodiment is all identical with embodiment 1 with structure, only difference be in, as shown in Figure 4, the luminous zone 25 of present embodiment comprises one first luminescent layer 251, a clearance layer 252, one second luminescent layer 253 and one the 3rd luminescent layer 254 in regular turn.Wherein, the material of the 3rd luminescent layer 254 is identical with second luminescent layer 253.
Embodiment 5
The oled device technology of present embodiment is all identical with embodiment 1 with structure, only difference be in, as shown in Figure 5, the luminous zone 25 of present embodiment comprises one first luminescent layer 251, one second luminescent layer 253, a clearance layer 255 and one the 3rd luminescent layer 254 in regular turn.Wherein, the material of the 3rd luminescent layer 254 and material clearance layer 255 identical with second luminescent layer 253 is CBP.
Embodiment 6
The oled device technology of present embodiment is all identical with embodiment 1 with structure, only difference be in, as shown in Figure 6, the luminous zone 25 of present embodiment comprises one first luminescent layer 251, a clearance layer 252, one second luminescent layer 253, a clearance layer 255 and one the 3rd luminescent layer 254 in regular turn.Wherein, the material of the 3rd luminescent layer 254 and material clearance layer 255 identical with second luminescent layer 253 is TCTA.
In sum, oled device of the present invention, owing between any two luminous zones at least one clearance layer is set, and the energy rank of clearance-adjustable layer are located between the adjacent two luminescent layers energy rank, so that can utilize simple technology and apparatus structure, promptly obtain an oled device with high color rendering and high-luminous-efficiency.In addition since organic light emitting apparatus of the present invention it is simple in structure and technology is easy, and can produce white light with high color rendering, therefore, can be used for replacing general normal lighting equipment.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated should be as the criterion so that the claim scope is described certainly, but not only limits to the foregoing description.

Claims (14)

1. oled device comprises:
One substrate;
One first electrode is arranged at this substrate top;
One luminous zone is arranged at this first electrode top, and this luminous zone comprises a plurality of luminescent layers and at least one clearance layer, wherein this at least one clearance layer be arranged at described luminescent layer times between the two, and described luminescent layer comprises a dyestuff respectively; And
One second electrode is arranged at this top, luminous zone.
2. oled device as claimed in claim 1, wherein the material of this at least one clearance layer is a material of main part, a fluorescent dye or its mixture.
3. oled device as claimed in claim 1, wherein the material of this at least one clearance layer is TCTA, CBP, 4P-NPD, TPBi, Alq 3Or its mixture.
4. oled device as claimed in claim 1, wherein this dyestuff is a fluorescent dye, a phosphorescent coloring or its mixture.
5. oled device as claimed in claim 4, at least one luminescent layer in the wherein said luminescent layer comprises this phosphorescent coloring, and this at least one luminescent layer also comprises a material of main part.
6. oled device as claimed in claim 1, wherein said luminescent layer comprises one first luminescent layer and one second luminescent layer, and this at least one clearance layer is arranged between this first luminescent layer and this second luminescent layer, and this first luminescent layer is arranged between this second luminescent layer and this first electrode.
7. oled device as claimed in claim 6, wherein this dyestuff of this first luminescent layer comprises MDP3FL and DSB, and DSB content is the 0.01-50wt% of MDP3FL.
8. oled device as claimed in claim 6, wherein this second luminescent layer also comprises a material of main part, and this dyestuff of this second luminescent layer comprises Ir (piq) 2 (acac), Ir (2-phq) 3And Ir (ppy) 3, and Ir (piq) 2 (acac) content accounts for the 0.01-10wt% of this material of main part, Ir (2-phq) 3Content accounts for the 0.01-10wt% of this material of main part, and Ir (ppy) 3Content accounts for the 0.01-10wt% of this material of main part.
9. oled device as claimed in claim 1, wherein said luminescent layer comprises one first luminescent layer, one second luminescent layer and one the 3rd luminescent layer, and this at least one clearance layer is arranged between this first luminescent layer and this second luminescent layer, between this second luminescent layer and the 3rd luminescent layer, or between this first luminescent layer and this second luminescent layer and between this second luminescent layer and the 3rd luminescent layer, and this first luminescent layer is arranged between this second luminescent layer and this first electrode, and this second luminescent layer is arranged between this first luminescent layer and the 3rd luminescent layer.
10. oled device as claimed in claim 9, wherein this dyestuff of this first luminescent layer comprises MDP3FL and DSB, and DSB content is the 0.01-50wt% for MDP3FL.
11. oled device as claimed in claim 9, wherein this second luminescent layer also comprises a material of main part, and this dyestuff of this second luminescent layer is to comprise Ir (piq) 2 (acac), Ir (2-phq) 3And Ir (ppy) 3, and Ir (piq) 2 (acac) content accounts for the 0.01-10wt% of this material of main part, Ir (2-phq) 3Content is the 0.01-10wt% that accounts for this material of main part, and Ir (ppy) 3Content accounts for the 0.01-10wt% of this material of main part.
12. oled device as claimed in claim 9, wherein the 3rd luminescent layer also comprises a material of main part, and this dyestuff of the 3rd luminescent layer comprises Ir (piq) 2 (acac), Ir (2-phq) 3And Ir (ppy) 3, and Ir (piq) 2 (acac) content accounts for the 0.01-10wt% of this material of main part, Ir (2-phq) 3Content accounts for the 0.01-10wt% of this material of main part, and Ir (ppy) 3Content accounts for the 0.01-10wt% of this material of main part.
13. oled device as claimed in claim 1 also comprises: an electric hole transport layer is arranged between this first electrode and this luminous zone; One electric hole implanted layer is arranged between this first electrode and this luminous zone; Or an electric hole implanted layer and an electric hole transport layer, repeatedly place in regular turn on this first electrode, and be positioned between this first electrode and this luminous zone.
14. oled device as claimed in claim 1 also comprises: an electron transfer layer is arranged between this luminous zone and this second electrode; One electron injecting layer is arranged between this luminous zone and this second electrode; Or an electron transfer layer and an electron injecting layer, repeatedly place on this luminous zone in regular turn, and be positioned between this luminous zone and this second electrode.
CN2010102509997A 2010-04-09 2010-08-09 Organic light-emitting diode device Pending CN102214799A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006594A (en) * 2004-08-20 2007-07-25 伊斯曼柯达公司 White OLED having multiple white electroluminescent units
CN101055923A (en) * 2006-04-13 2007-10-17 Lg电子株式会社 Organic electroluminescence device and method for fabricating the same
US20080268282A1 (en) * 2007-04-30 2008-10-30 Spindler Jeffrey P White light tandem oled
CN101611505A (en) * 2007-02-19 2009-12-23 大日本印刷株式会社 Organic electroluminescent device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101006594A (en) * 2004-08-20 2007-07-25 伊斯曼柯达公司 White OLED having multiple white electroluminescent units
CN101055923A (en) * 2006-04-13 2007-10-17 Lg电子株式会社 Organic electroluminescence device and method for fabricating the same
CN101611505A (en) * 2007-02-19 2009-12-23 大日本印刷株式会社 Organic electroluminescent device
US20080268282A1 (en) * 2007-04-30 2008-10-30 Spindler Jeffrey P White light tandem oled

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Application publication date: 20111012