CN102214656A - Circuit structure of ultrahigh voltage level shifter - Google Patents
Circuit structure of ultrahigh voltage level shifter Download PDFInfo
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- CN102214656A CN102214656A CN2010101384049A CN201010138404A CN102214656A CN 102214656 A CN102214656 A CN 102214656A CN 2010101384049 A CN2010101384049 A CN 2010101384049A CN 201010138404 A CN201010138404 A CN 201010138404A CN 102214656 A CN102214656 A CN 102214656A
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Abstract
The invention discloses a circuit structure of an ultrahigh voltage level shifter. The circuit structure comprises a substrate layer having a low-voltage level, a rerouting layer having an ultrahigh voltage level, and a passivation layer which is arranged between the substrate layer and the rerouting layer and used for preventing damage due to a high voltage difference between the substrate layer and the rerouting layer, wherein a circuit component of the ultrahigh voltage level shifter is arranged on the substrate layer.
Description
Technical field
The present invention relates to the accurate deviator in a kind of extra-high pressure position, particularly about the circuit structure of the accurate deviator in a kind of extra-high pressure position.
Background technology
As shown in Figure 1, in the application of high side floating dam drive system 10, because the power supply Vin that high-side transistor QH connects is an extra-high pressure, can reach 400V, therefore the voltage of phase node PHASE floats between 0～400V when it operates, and needs the accurate deviator in extra-high pressure position (ultra high voltage level shifter) the 12 control signal PWM with low-voltage to be converted to high voltage to drive the gate of high-side transistor QH for this reason.Fig. 2 is the circuit diagram of the accurate deviator 12 in extra-high pressure position of Fig. 1, it utilizes controlling signal Set, the Reset of 0～12V that MOS Q1 and Q2 are switched alternately, make tie point voltage V1, the V2 of MOS Q1, Q2 and resistance R 1, R2 reach high voltage via boost terminal BOOT, make latch circuit (latch) 14 produce high-tension drive signal.Owing to be connected boost terminal BOOT with the resistance R 1 of MOS Q1, Q2 polyphone, the other end of R2, therefore the voltage of boost terminal BOOT is also along with the voltage of phase node PHASE floats between 12～400V when operating, thereby tie point voltage V1, V2 also can reach the high voltage of 400V.Therefore, need be high voltage withstanding except MOS Q1, Q2, the circuit in the dotted line 16 all has the possibility that causes circuit to damage because of high voltage.
Fig. 3 is near the circuit structure the existing MOS Q1, metal 1 is the tie point of Q1 and R1, its voltage V1 can reach about 400V when running, and the basalis at MOS Q1 place is electronegative potential standard position and is generally earthing potential, so the pressure differential deltap V between metal 1 and this basalis will be near 400V.If have only one deck dielectric medium between this metal 1 and this basalis as shown in Figure 3, will be easy to damage because of High Pressure Difference.
U.S. Patent number 5446300 uses the method for wiring (layout) to solve this high-tension problem, uses a neck (neck) structure to go to overcome when wiring, but the method has wiring that area increases, be difficult to calculate electric field and shortcoming such as easily blow.
Therefore, await to develop a kind of can be high pressure resistant and the circuit structure of the accurate deviator in extra-high pressure position of easy realization.
Summary of the invention
One of purpose of the present invention is to propose the circuit structure of the accurate deviator in a kind of extra-high pressure position.
According to the present invention, the circuit structure of the accurate deviator in a kind of extra-high pressure position comprises the basalis of a low-voltage, the circuit unit of this accurate deviator in extra-high pressure position is positioned on this basalis, one extra-high pressure rerouting layer, and one passivation layer between this basalis and this rerouting layer, in order to avoid the destruction that pressure reduction caused between this basalis and this rerouting layer.
The present invention distributes the high-tension circuit of carrying to be distributed in the rerouting layer, those distances of carrying high-tension circuit and basalis are zoomed out, and between rerouting layer and basalis, there is a passivation layer, passivation layer has the function of electrical isolation, more can avoid the destruction that pressure reduction caused between this basalis and this rerouting layer.And the method that the present invention disclosed does not need too complicated silicide processing procedure just can to reach easily and realize.
Description of drawings
Fig. 1 is the circuit diagram of high pressure floating dam drive system;
Fig. 2 is the circuit diagram of the accurate deviator in extra-high pressure position of Fig. 1;
Fig. 3 is near the circuit structure the existing MOS; And
Fig. 4 is near the circuit structure the MOS of the present invention.
Embodiment
Below in conjunction with Figure of description the specific embodiment of the present invention is done detailed description.
According to the present invention, Fig. 4 is near the embodiment of the circuit structure the transistor Q1 among Fig. 2, and its difference with Fig. 3 is that (Re-Distribution Layer is RDL) as linking up the original metal level of bridge replacement with the rerouting layer.In the prior art, the rerouting layer mainly was the work of serving as coiling originally, covered on the chip of transpassivation (passivation) in order to rearrange connecting point position, and was convenient more when making chip (chip) encapsulation.The present invention distributes the high-tension circuit of carrying to be distributed in the rerouting layer, those distances of carrying high-tension circuit and basalis are zoomed out, and between rerouting layer and basalis, there is a passivation layer (passivation layer), passivation layer has the function of electrical isolation, more can avoid the destruction that pressure reduction caused between this basalis and this rerouting layer.And the method that the present invention disclosed does not need too complicated silicide processing procedure just can to reach easily and realize.
More than; only be preferred embodiment of the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range that claim was defined.
Claims (2)
1. the circuit structure of the accurate deviator in extra-high pressure position is characterized in that, comprises:
One low-voltage basalis, the circuit unit of this accurate deviator in extra-high pressure position is positioned on this basalis;
One extra-high pressure rerouting layer; And
One passivation layer is between this basalis and this rerouting layer, in order to avoid the destruction that pressure reduction caused between this basalis and this rerouting layer.
2. the circuit structure of the accurate deviator in extra-high pressure as claimed in claim 1 position is characterized in that, the voltage quasi position of this basalis is the accurate position of earthed voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101384049A CN102214656A (en) | 2010-04-02 | 2010-04-02 | Circuit structure of ultrahigh voltage level shifter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101384049A CN102214656A (en) | 2010-04-02 | 2010-04-02 | Circuit structure of ultrahigh voltage level shifter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102214656A true CN102214656A (en) | 2011-10-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101384049A Pending CN102214656A (en) | 2010-04-02 | 2010-04-02 | Circuit structure of ultrahigh voltage level shifter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102214656A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115282A1 (en) * | 1998-12-21 | 2002-08-22 | Mou-Shiung Lin | Chip structure and process for forming the same |
| CN1630194A (en) * | 2003-12-18 | 2005-06-22 | 松下电器产业株式会社 | Level shift circuit |
| CN101154814A (en) * | 2006-09-26 | 2008-04-02 | 唐安祥 | Electric energy feedback type reactive-load self-compensation method and apparatus |
| CN101339943A (en) * | 2007-07-05 | 2009-01-07 | 盛群半导体股份有限公司 | Integrated circuit comprising multiple potential transferring devices |
-
2010
- 2010-04-02 CN CN2010101384049A patent/CN102214656A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020115282A1 (en) * | 1998-12-21 | 2002-08-22 | Mou-Shiung Lin | Chip structure and process for forming the same |
| CN1630194A (en) * | 2003-12-18 | 2005-06-22 | 松下电器产业株式会社 | Level shift circuit |
| CN101154814A (en) * | 2006-09-26 | 2008-04-02 | 唐安祥 | Electric energy feedback type reactive-load self-compensation method and apparatus |
| CN101339943A (en) * | 2007-07-05 | 2009-01-07 | 盛群半导体股份有限公司 | Integrated circuit comprising multiple potential transferring devices |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111012 |