CN102212876A - Method for manufacturing seed crystal chuck - Google Patents
Method for manufacturing seed crystal chuck Download PDFInfo
- Publication number
- CN102212876A CN102212876A CN2011101230929A CN201110123092A CN102212876A CN 102212876 A CN102212876 A CN 102212876A CN 2011101230929 A CN2011101230929 A CN 2011101230929A CN 201110123092 A CN201110123092 A CN 201110123092A CN 102212876 A CN102212876 A CN 102212876A
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- CN
- China
- Prior art keywords
- graphite
- seed crystal
- chuck
- crystal chuck
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a method for manufacturing a seed crystal chuck, and the method is characterized in that the seed crystal chuck is made of a graphite material. According to the method, because the melting point of the graphite is 3850+/-50DEG C, the graphite has good high-temperature resistance performance. Compared with molybdenum, the graphite has lower cost, thus the graphite conforms to production requirements.
Description
Technical field
The present invention relates to a kind of making method of seed chuck, be used in particular for the vertical pulling method pulling monocrystal.
Background technology
In the production process of monocrystalline (vertical pulling method), usually to adopt molybdenum to make seed chuck, but this molybdenum chuck has the following disadvantages: the one, because wireline is broken or operative employee's error, meeting of molybdenum chuck and seed crystal fall in the crucible that the silicon material is housed together, cause whole stove silicon material all to scrap; The 2nd, because the factor of material price, molybdenum chuck physical dimension is less relatively, and structure design has only been considered fixedly seed crystal and has been connected weight and seed crystal, can not play barrier effect to iron filings trickle in the stove, impurity; The 3rd, molybdenum uses for some time rear surface can generate the molybdenum silicon compound 600 ℃ of easily oxidations more than the high temperature, falls in the single crystal growing furnace after coming off, and has directly influenced the quality of single crystal silicon product.
Summary of the invention
The purpose of this invention is to provide making method with high temperature resistant and cheap a kind of seed chuck.
The technical scheme that the present invention takes is: a kind of making method of seed chuck is characterized in that this seed chuck adopts graphite material to make.
Adopt the present invention, because the fusing point of graphite is 3850 ± 50 ℃, has fine resistance to elevated temperatures, and compare with molybdenum, therefore relative low price, meets the production needs.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
As required, adopt the graphite of certain grade, utilize Mold Making to become the graphite seed chuck, and the monocrystalline that is applied to vertical pulling method gets final product in producing.
Claims (1)
1. the making method of a seed chuck is characterized in that this seed chuck adopts graphite material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101230929A CN102212876A (en) | 2011-05-11 | 2011-05-11 | Method for manufacturing seed crystal chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101230929A CN102212876A (en) | 2011-05-11 | 2011-05-11 | Method for manufacturing seed crystal chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102212876A true CN102212876A (en) | 2011-10-12 |
Family
ID=44744400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101230929A Pending CN102212876A (en) | 2011-05-11 | 2011-05-11 | Method for manufacturing seed crystal chuck |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102212876A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102581577A (en) * | 2012-03-26 | 2012-07-18 | 苏州先端稀有金属有限公司 | Method for manufacturing seed crystal chuck |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362544A (en) * | 2001-12-26 | 2002-08-07 | 中国科学院上海光学精密机械研究所 | Forming process of seed crystal bar chuck |
| CN201560249U (en) * | 2009-09-27 | 2010-08-25 | 上海元亮光电科技有限公司 | Novel seedchuck structure |
| CN201801635U (en) * | 2010-10-13 | 2011-04-20 | 浙江舒奇蒙能源科技有限公司 | Seed crystal clamping head for single crystal furnace |
-
2011
- 2011-05-11 CN CN2011101230929A patent/CN102212876A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1362544A (en) * | 2001-12-26 | 2002-08-07 | 中国科学院上海光学精密机械研究所 | Forming process of seed crystal bar chuck |
| CN201560249U (en) * | 2009-09-27 | 2010-08-25 | 上海元亮光电科技有限公司 | Novel seedchuck structure |
| CN201801635U (en) * | 2010-10-13 | 2011-04-20 | 浙江舒奇蒙能源科技有限公司 | Seed crystal clamping head for single crystal furnace |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102581577A (en) * | 2012-03-26 | 2012-07-18 | 苏州先端稀有金属有限公司 | Method for manufacturing seed crystal chuck |
| CN102581577B (en) * | 2012-03-26 | 2014-01-01 | 苏州先端稀有金属有限公司 | Method for manufacturing seed crystal chuck |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111012 |