CN102212784A - Deposition evaporation source - Google Patents
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- CN102212784A CN102212784A CN2010101497992A CN201010149799A CN102212784A CN 102212784 A CN102212784 A CN 102212784A CN 2010101497992 A CN2010101497992 A CN 2010101497992A CN 201010149799 A CN201010149799 A CN 201010149799A CN 102212784 A CN102212784 A CN 102212784A
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Abstract
The invention relates to a deposition evaporation source which comprises a heating device, a heating plate and evaporation materials, wherein the heating plate is provided with a plurality of grooves, the grooves on the heating plate are arranged in such a way that the sum of the volumes of the grooves in the central part of the heating plate is less than the sum of the volumes of the grooves in the marginal part of the heating plate, and the evaporation materials are arranged in the grooves. The deposition evaporation source provided by the invention can effectively solve the problem that the deposition thickness of a deposited film is nonuniform as a result of the nonuniform temperature on the surface of the substrate. The deposition evaporation source can realize the uniformity of the deposited film on the surface of the substrate, thereby obtaining a high-quality deposited film.
Description
Technical field
The present invention relates to the thin film solar cell technology of preparing, relate in particular near space distillation depositing device and Evaporator Source for Depositing thereof in the thin film solar cell preparation process.
Background technology
Sun power is most important basic power source in the various renewable energy sources, and biomass energy, wind energy, sea energy, water energy etc. convert solar radiant energy to by transfer equipment the solar energy utilization technique that belongs to of heat energy utilization all from sun power; Belong to the solar energy generation technology to what solar radiant energy converted utilization of power to by transfer equipment, photoelectric conversion device normally utilizes the photovoltaic effect principle of semiconducter device to carry out opto-electronic conversion, therefore claims solar-photovoltaic technology again.
Since the seventies, in view of the finiteness of conventional energy resources supply and the increase of environmental protection pressure, many in the world countries have started the upsurge of development and use sun power and renewable energy source.United Nations has held a series of summit meetings that have the various countries leader to participate in since the nineties, discusses and formulate world's sun power strategic planning, promotes the development and use of global solar and renewable energy source.Development and use sun power and renewable energy source become a big theme and the common action of international community, become the important content that various countries formulate the strategy of sustainable development.In State Commission for Restructuring the Economic Systems is listed research and development sun power and renewable energy technologies always by the Chinese government since " six or five ", has promoted the development of China's sun power and renewable energy technologies and industry greatly.Two during the last ten years, and solar utilization technique is being researched and developed, commercially produced, all obtaining tremendous development aspect the market development, become the world fast, one of the new industry of steady progression.
Battery industry is the Chaoyang industry of 21 century, and development prospect is very wide.In battery industry, pollution, market space maximum should be solar cell least, and the research and development of solar cell more and more are subjected to the extensive attention of countries in the world.
Solar cell is the novel battery that a kind of developed recently gets up.Solar cell is to utilize photoelectricity transformation principle to make the radiant light of the sun change a kind of device of electric energy into by semiconductor substance.The semiconductor material of manufacturing solar cell is known tens kinds, so the kind of solar cell is also a lot.Present solar cell mainly comprises silicon substrate battery and hull cell.
Film photovoltaic material comprises silicon film, cadmium telluride (CdTe) film, gallium arsenide, copper indium gallium tin etc., wherein is the film photovoltaic device of matrix with CdTe, has great magnetism in photovoltaic scientific and technological circle.CdTe has become efficient, stable, the cheap film photovoltaic device material that people generally acknowledge.CdTe polycrystal film solar cell efficiency of conversion theoretical value at room temperature is 27%, and the small area battery efficiency has reached 16.5% at present, and big area commercialization battery conversion efficiency surpasses 11%.From the aspects such as efficiency of conversion, reliability and price factor that CdTe polycrystal film solar cell has reached at present, it is aspect the solar photovoltaic transformation applications of ground, and Development Prospect is very wide.
Preparation CdTe film process mainly contains at present: near space distillation (Close spacesublimation, CSS), electroplate silk screen printing, chemical vapor deposition (CVD), physical vapor deposition (PVD), metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), (ABE), spraying, sputter, vacuum-evaporation and galvanic deposit etc.
Wherein, the principle of work of CSS is: evaporation source near substrate, is heated up evaporation source, make the evaporating materials evaporation above it, arrive at substrate surface in the short period, form dense film.Particularly, in the process of utilizing CSS method deposition CdTe film, the CdTe powder generally applies or is deposited on the evaporation source surface, substrate is placed on above the evaporation source, be approximately several centimetres apart from evaporation source, evaporation source is warming up to more than 470 ℃, in certain operating air pressure and atmosphere, will generates layer of even CdTe film on the substrate surface.
The advantage that the CSS method prepares the CdTe film is, the evaporating materials loss is few, and crystallization direction is good, and photovoltaic property is good.Reach 15.8%, best big area (6728cm with the high conversion efficiency of the small area monomer CdTe battery of CSS method preparation
2) the CdTe battery, the efficiency of conversion of useful area is 9.1%.
But the CSS method faces some problems in the big area production process.Utilize this method to carry out the industrialization film production, the problem of uniformity of film problem and whole film surface photoelectricity consistence difference can occur, thereby influence the quality of deposit film.At first, the temperature of substrate surface is inconsistent, can cause the rate of evaporation difference of evaporating materials on the evaporation source, makes that the deposit thickness of deposit film is inconsistent; Its two, the residing work atmosphere of evaporated material is inconsistent in evaporative process, influences the photoelectric characteristic of deposit film.
Summary of the invention
First aspect of the present invention provides a kind of Evaporator Source for Depositing, it comprises heating unit, be positioned over the hot-plate of this heating unit top and be positioned over evaporating materials on the described hot-plate, wherein this hot-plate is provided with a plurality of grooves, and dispose a plurality of grooves on this hot-plate and make the volume sum of the groove be positioned at this hot-plate centre portions less than the volume sum of the groove that is positioned at this hot-plate edge section, wherein this evaporating materials is placed in this groove.
Preferably, Evaporator Source for Depositing according to a first aspect of the invention, wherein each groove of this hot-plate centre portions is identical with the volume of each groove of this hot-plate edge section, and the quantity of the groove of this hot-plate centre portions is more than the quantity of the groove of this hot-plate edge section.
Preferably, Evaporator Source for Depositing according to a first aspect of the invention, wherein the length of the groove of this hot-plate centre portions is less than the length of the groove of this hot-plate edge section.
Preferably, Evaporator Source for Depositing according to a first aspect of the invention, wherein the degree of depth of the groove of this hot-plate centre portions is less than the degree of depth of the groove of this hot-plate edge section.
Preferably, Evaporator Source for Depositing according to a first aspect of the invention, wherein this heating unit is a heater strip.
Preferably, Evaporator Source for Depositing according to a first aspect of the invention, wherein the surf zone beyond this hot-plate upper groove is provided with a plurality of passages that penetrate this hot-plate.
Preferably, this passage is through hole or seam.
Preferably, aforesaid Evaporator Source for Depositing is applicable to the near space distillation.
Preferably, in the aforesaid Evaporator Source for Depositing, this hot-plate is a soaking plate.
Preferably, in the aforesaid Evaporator Source for Depositing, this hot-plate is made by any one material in silicon carbide, quartz, BN, the mullite.
Second aspect of the present invention provides a kind of near space distillation depositing device that comprises above-mentioned any one Evaporator Source for Depositing.
The 3rd aspect of the present invention provides a kind of deposit film that the near space distillation depositing device of second aspect obtains according to the present invention.Preferably, this deposit film is the CdTe film.
The 4th aspect of the present invention provides a kind of solar cell that adopts the 3rd deposit film that the aspect provides of the present invention.
Can solve effectively by the inconsistent inconsistent problem of deposit thickness that causes deposit film of the temperature of substrate surface according to Evaporator Source for Depositing of the present invention.Can realize the uniformity of deposit film on the substrate surface according to Evaporator Source for Depositing of the present invention, thereby obtain high-quality deposit film.
After reading following detailed description the in detail in conjunction with the accompanying drawing that wherein shows and described exemplary embodiment of the present invention, it will be appreciated by those skilled in the art that these and other target of the present invention, feature and advantage.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 shows Evaporator Source for Depositing device according to an embodiment of the invention.
Fig. 2 is the vertical view of hot-plate in the Evaporator Source for Depositing device shown in Figure 1.
Fig. 3 shows Evaporator Source for Depositing device according to another embodiment of the invention.
Fig. 4 is the vertical view of hot-plate in the Evaporator Source for Depositing device shown in Figure 3.
Fig. 5 shows Evaporator Source for Depositing device according to still another embodiment of the invention.
Fig. 6 is the vertical view of hot-plate in the Evaporator Source for Depositing device shown in Figure 5.
Embodiment
Before in detail explaining any embodiment of the present invention, be to be understood that the present invention its application facet be not limited to propose in the following description or the following drawings shown in the details of structure and the layout of parts.The present invention can also have other embodiment and can be implemented in every way or realize.Similarly, be to be understood that wording used herein and term are intended to explanation and should be counted as qualification.
Fig. 1 shows Evaporator Source for Depositing device according to an embodiment of the invention.As shown in Figure 1, evaporation source 100 comprises hot-plate 102, be arranged at the heater strip 104 below the hot-plate 102 and be located at evaporating materials (not shown) above the hot-plate 102, and evaporating materials can be by applying or mode such as deposition is located on the hot-plate.Wherein have a plurality of grooves on the hot-plate 102, such as groove 106.When these grooves are set, these grooves are configured make the volume sum of the groove be positioned at hot-plate 102 centre portionss less than the volume sum of the groove that is positioned at the edge section.This configuration can realize in several ways.Such as, under all identical prerequisite of all depths of groove, the length of groove that makes the hot-plate centre portions is less than the length of the groove of hot-plate edge section.Again such as, under all identical prerequisite of all groove length, the degree of depth of groove that makes the hot-plate centre portions is less than the degree of depth of the groove of this hot-plate edge section.Perhaps, under each groove of hot-plate centre portions situation identical with the volume of each groove of hot-plate edge section, the quantity of groove that makes the hot-plate centre portions is more than the quantity of the groove of hot-plate edge section.In addition, can also use above mentioned three kinds of distributing styles simultaneously.
Fig. 1 shows a kind of in many groove distributing styles.Fig. 2 is the vertical view of hot-plate shown in Figure 1.Then can more be clear that by Fig. 2, be positioned at the width of groove 106 of edge section and length width and length greater than the groove of middle portion.Obviously, this distributing style makes the volume of groove 106 of edge section greater than the volume of middle portion groove.Thereby the groove volume sum of hot-plate 102 centre portionss is less than the groove volume sum of edge section.
When carrying out the CSS evaporation, at first in the groove of hot-plate, put into evaporating materials, then hot-plate is placed on the heater strip.Afterwards, heater strip is energized and generates heat and heat, the intensification so that hot-plate is heated.
In principle, selected hot-plate is soaking plate preferably, promptly can make the temperature on the whole plate even after being heated.But when reality is implemented, be difficult to find absolute uniform heating plate.In the art, generally select graphite cake, boron nitride (BN) plate, silicon carbide, quartz or mullite plate as hot-plate.In general, the central portion temp of this hot-plate is a little more than the temperature of edge section.For evaporating materials, temperature is high more, and rate of evaporation is high more.
When the temperature of heating pad is elevated to when being enough to make evaporating materials to be evaporated, evaporating materials will be evaporated on the substrate surface on the formation of deposits film.Be meant cadmium telluride (CdTe) film in an embodiment of the present invention herein.
Because the evaporating materials that is positioned over the hot-plate centre portions is less than the evaporating materials of edge section, so, although the temperature of centre portions is than the temperature height of edge section, be evaporated the rate of evaporation height of material, but because the comparatively small amt of the evaporating materials of centre portions, therefore, by the amount of adjustment center and edge evaporating materials, can realize the rate of evaporation unanimity of evaporating materials on whole generating surface, thereby realize the uniformity of deposit film on the substrate surface.
Fig. 3 shows Evaporator Source for Depositing device according to another embodiment of the invention.As shown in Figure 3, evaporation source 200 comprises hot-plate 202, be arranged at the heater strip 204 below the hot-plate 202 and be located at evaporating materials (not shown) above the hot-plate 202, and evaporating materials can be by applying or mode such as deposition is located on the hot-plate.Wherein, be provided with the through hole 208 that runs through hot-plate 202 on the hot-plate 202 equably, as shown in Figure 4.In alternative embodiment, also can not use this through hole, and use seam shape passage.No matter be through hole or seam shape passage, all must make gas can pass through hot-plate 202 swimmingly.
Usually, big area CSS evaporation source in the course of the work, heat can move to the edge section from the hot-plate centre portions; Simultaneously,, make working gas be difficult to promptly add to the surface of whole evaporation source, cause the structure of the sedimentary film of substrate surface, photoelectric properties to occur easily than big-difference because the distance of substrate (not shown) and evaporation source is less.Then can avoid this problem according to Evaporator Source for Depositing device shown in Figure 3.
When carrying out the CSS evaporation, be placed with evaporating materials on the hot-plate, and hot-plate is placed on the heater strip top.Afterwards, heater strip is energized and generates heat and heat, the intensification so that hot-plate is heated.Owing to be provided with the through hole 208 that runs through hot-plate 202 equably on hot-plate 202 surfaces, according to the hot-air convection principle, under the hot gas flow convection action, working gas will be from flowing to hot-plate 202 tops via through hole 208 from hot-plate 202 belows, thereby in the assurance deposition process, work atmosphere is in whole heater plate surface unanimity, makes structure, the photoelectric characteristic unanimity of deposit film, thereby obtains high-quality deposit film.
Fig. 5 shows the Evaporator Source for Depositing device 300 according to further embodiment of the present invention.As shown in the figure, this evaporation source 300 comprises hot-plate 302, be arranged at the heater strip 304 below the hot-plate 302 and be located at evaporating materials (not shown) above the hot-plate 302, and evaporating materials can be by applying or mode such as deposition is located on the hot-plate.Wherein, not only be provided with the through hole that runs through hot-plate 302 308 as shown in Figure 3 on the hot-plate 302 equably, also be provided with as Fig. 1 to a plurality of grooves 306 shown in Figure 2.Wherein, through hole 308 also can use seam shape passage to replace.And no matter be through hole or seam shape passage, all must make gas can pass through hot-plate 302 swimmingly.Wherein, these grooves 306 are configured to be positioned at the volume sum of groove of hot-plate 302 centre portionss less than the volume sum of the groove that is positioned at the edge section.Evaporator Source for Depositing device as shown in Figure 5, not only can realize the rate of evaporation unanimity of evaporating materials on whole generating surface, thereby realized the uniformity of deposit film on the substrate surface, can also guarantee in the deposition process, work atmosphere is in whole heater plate surface unanimity, make structure, the photoelectric characteristic unanimity of deposit film, thereby obtain high-quality deposit film.
In addition, an alternative embodiment of the invention also provides the near space distillation depositing device of the described Evaporator Source for Depositing device that uses the foregoing description.
In addition, further embodiment of the present invention also provides the deposit film that the near space distillation depositing device of use the foregoing description obtains.
This deposit film can be the CdTe film.
In addition, further embodiment of the present invention also provides the CdTe thin film solar cell that the near space distillation depositing device production of use the foregoing description obtains.
Although one exemplary embodiment described above the invention is not restricted to these one exemplary embodiment.Within the spirit and scope of the present invention, these one exemplary embodiment can combined use or each one exemplary embodiment can partly be revised.
Though preferred one exemplary embodiment of the present invention adopts particular term to be described, this description just is used for illustrative purposes.Should be understood that, in the spirit and scope that do not break away from claim, can make various modifications and conversion claims.
Claims (14)
1. Evaporator Source for Depositing comprises:
Heating unit;
Hot-plate is positioned over described heating unit top; With
Evaporating materials is positioned on the described hot-plate,
It is characterized in that, described hot-plate is provided with a plurality of grooves, and dispose a plurality of grooves on the described hot-plate and make the volume sum of the groove be positioned at described hot-plate centre portions less than the volume sum of the groove that is positioned at described hot-plate edge section, wherein said evaporating materials is placed in the described groove.
2. Evaporator Source for Depositing as claimed in claim 1, it is characterized in that, each groove of described hot-plate centre portions is identical with the volume of each groove of described hot-plate edge section, and the quantity of the groove of described hot-plate centre portions is more than the quantity of the groove of described hot-plate edge section.
3. Evaporator Source for Depositing as claimed in claim 1 is characterized in that, the length of the groove of described hot-plate centre portions is less than the length of the groove of described hot-plate edge section.
4. Evaporator Source for Depositing as claimed in claim 1 is characterized in that, the degree of depth of the groove of described hot-plate centre portions is less than the degree of depth of the groove of described hot-plate edge section.
5. Evaporator Source for Depositing as claimed in claim 1 is characterized in that wherein said heating unit is a heater strip.
6. Evaporator Source for Depositing as claimed in claim 1 is characterized in that, the surf zone beyond the described hot-plate upper groove is provided with a plurality of passages that penetrate described hot-plate.
7. Evaporator Source for Depositing as claimed in claim 6 is characterized in that, described passage is through hole or seam.
8. as any described Evaporator Source for Depositing in the claim 1 to 7, wherein, described evaporation source is applicable to the near space distillation.
9. as any described Evaporator Source for Depositing in the claim 1 to 7, wherein, described hot-plate is a soaking plate.
10. as any described Evaporator Source for Depositing in the claim 1 to 7, wherein, described hot-plate is made by any one material in silicon carbide, quartz, BN, the mullite.
11. one kind comprises the near space distillation depositing device as any described Evaporator Source for Depositing among the claim 1-10.
12. the deposit film that a basis obtains as near space distillation depositing device as described in the claim 11.
13. deposit film as claimed in claim 12, wherein said deposit film are the CdTe films.
14. the solar cell of each described deposit film in employing such as the claim 12 to 13.
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| CN2010101497992A CN102212784A (en) | 2010-04-12 | 2010-04-12 | Deposition evaporation source |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101497992A CN102212784A (en) | 2010-04-12 | 2010-04-12 | Deposition evaporation source |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103866239A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Linear evaporation source device |
| CN105088146A (en) * | 2015-08-25 | 2015-11-25 | 京东方科技集团股份有限公司 | Evaporation device |
| CN105246588A (en) * | 2013-01-28 | 2016-01-13 | 韩华泰科株式会社 | Graphene synthesis apparatus and graphene synthesis method using same |
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| CN103866239A (en) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | Linear evaporation source device |
| CN105246588A (en) * | 2013-01-28 | 2016-01-13 | 韩华泰科株式会社 | Graphene synthesis apparatus and graphene synthesis method using same |
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| CN105246588B (en) * | 2013-01-28 | 2020-04-24 | 韩华航空航天公司 | Graphene synthesis device and graphene synthesis method using same |
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Application publication date: 20111012 |