CN102208402B - High-color-rendering light-emitting diode (LED) chip module, white light LED device and manufacturing method thereof - Google Patents

High-color-rendering light-emitting diode (LED) chip module, white light LED device and manufacturing method thereof Download PDF

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Publication number
CN102208402B
CN102208402B CN201110150320.1A CN201110150320A CN102208402B CN 102208402 B CN102208402 B CN 102208402B CN 201110150320 A CN201110150320 A CN 201110150320A CN 102208402 B CN102208402 B CN 102208402B
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led chip
extremely
layer
conducting layer
transparency conducting
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CN102208402A (en
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许朝军
周玉刚
姜志荣
赖燃兴
肖国伟
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Guangdong APT Electronics Ltd
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APT (GUANGZHOU) ELECTRONICS Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device

Abstract

The invention relates to a white light light-emitting diode (LED) device. The white light LED device comprises an LED chip module, a substrate and a fluorescent glue; the LED chip module comprises at least one first LED chip and at least one second LED chip which are laminated, and a semi-transparent reflection layer arranged between the first LED chip and the second LED chip; the semi-transparent reflection layer directly transmits light rays on one side of the semi-transparent reflection layer and reflects light rays on the other side of the semi-transparent reflection layer; and the LED chip module is arranged on the substrate; and the fluorescent glue is arranged on the substrate and the LED chip module is coated with the fluorescent glue. Compared with the prior art, the white light LED device and the LED chip module of the white light LED device have the advantages that: the semi-transparent reflection layer is arranged between the first LED chip and the second LED chip which are laminated, so light rays below the semi-transparent reflection layer can directly penetrate through the semi-transparent reflection layer, and light rays above the semi-transparent reflection layer can be reflected at the same time instead of being absorbed by the LED chip at the lower layer, and then a high-color rendering index and uniform color mixing are realized, and emergent efficiency of the LED device is enhanced.

Description

LED chip module, white light LED part and the manufacture method thereof with high-color rendering
Technical field
The invention belongs to the manufacture field of luminescent device, relate to a kind of structure and manufacture method thereof of LED device, relate in particular to a kind of LED chip module, white light LED part and manufacture method thereof with high-color rendering.
Background technology
LED (light-emitting diode) light source have high efficiency, long-life, energy-conservation, containing advantages such as harmful substance such as Hg.Along with the fast development of LED technology, the performances such as the brightness of LED, life-span have all obtained great lifting, make the application of LED more and more extensive, from outdoor lightings such as street lamps to room lightings such as decorative lamps, all use one after another or are replaced with LED as light source.And wherein white light LEDs, as the application of general lighting, has profound significance especially.The mainstream technology that realizes at present white light LEDs is blue-light LED chip collocation yellow fluorescent powder, but its color rendering index is lower, be difficult to realize color rendering index and reach 80 or above requirement, this just causes white light LEDs to be difficult to enter the room lighting fields such as reading lighting, show window illumination and medical illumination.Therefore, how to promote the color rendering index of white light LEDs, become a problem that urgent need is resolved in lighting field.
The Chinese invention patent application that is CN101694863A as publication number discloses a kind of manufacture method of white-light LED with high color rendering index, the method is mainly that the mixture of adhesive and fluorescent material is coated on blue-light LED chip, wherein fluorescent material is mixed by the green emitting phosphor of yellow fluorescent powder, red fluorescence powder and several wavelength, and realizes high-color rendering by the mixing of four kinds of fluorescent material.But, because the conversion efficiency of red fluorescence powder is lower, thereby can affect the light extraction efficiency of whole luminescent device.
The Chinese invention patent application that and for example publication number is CN101246876A discloses a kind of LED lamp of high light efficiency high coloration, this LED lamp selects one or more blue-light LED chip as excitation source, configure a plurality of red LED chips, by regulating red light intensity can obtain the illumination effect of the high light efficiency high coloration of different-colour.But because blue-light LED chip and a plurality of red LED chip are arranged in the same plane of substrate, different emission wavelength chips are positioned at the zones of different of substrate, tend to cause color blending effect inhomogeneous.
Summary of the invention
The object of the invention is to overcome shortcoming of the prior art with not enough, white light LED part and the LED chip module thereof of a kind of high light-emitting rate, the uniform high-color rendering of colour mixture be provided.
Meanwhile, the present invention also provides the manufacture method of the luminescent device of described high-color rendering.
The present invention is achieved by the following technical solutions: a kind of white light LED part, comprises a LED chip module, a substrate and a fluorescent glue.This LED chip module comprises at least one the first LED chip and at least one second LED chip of stacked setting, and be arranged on a semi-transparent reflector between this first LED chip and the second LED chip, the light of the direct transmission one of this semi-transparent reflection layer side, and reflect the light of its opposite side.This LED chip module is arranged on substrate, and this fluorescent glue is arranged on substrate and by LED chip module and is coated.
A kind of LED chip module, it comprises at least one the first LED chip and at least one second LED chip of stacked setting, and be arranged on a semi-transparent reflector between this first LED chip and the second LED chip, the light of the direct transmission one of this semi-transparent reflection layer side, and reflect the light of its opposite side.
A manufacture method for LED device, comprises the steps
1) manufacture a LED chip module: the second LED chip is arranged on to the top of the first LED chip, and a semi-transparent reflector is arranged between this second LED chip and the first LED chip;
2) this LED chip module is arranged on a substrate;
3) fluorescent glue is arranged on this substrate, and this LED chip module is coated or partly coated.
With respect to prior art, white light LED part of the present invention and LED chip module thereof arrange semi-transparent reflection layer between the first LED chip of stacked setting and the second LED chip, the LED chip that makes light under semi-transparent reflection layer can directly penetrate semi-transparent reflection layer and make light on semi-transparent reflection layer be reflected Er Bubei lower floor simultaneously absorbs, thereby realizing the uniform while of high color rendering index (CRI) and colour mixture, improving the light extraction efficiency of LED device.
The manufacture method of LED device of the present invention is in order to produce the luminescent device with high-color rendering.
In order to understand more clearly the present invention, below with reference to accompanying drawing explanation, set forth the specific embodiment of the present invention.
Accompanying drawing explanation
Fig. 1 is the structural representation of LED device of the present invention.
Fig. 2 is the structural representation of the LED chip module of Fig. 1.
Fig. 3 is the structural representation of the LED chip module of the embodiment of the present invention 1.
Fig. 4 is the circuit diagram of the LED chip module shown in Fig. 3.
Fig. 5 is the structural representation of the LED chip module of the embodiment of the present invention 2.
Fig. 6 is the structural representation of the LED chip module of the embodiment of the present invention 3.
Fig. 7 is the circuit diagram of the LED chip module shown in Fig. 6.
Fig. 8 is the structural representation of the LED chip module of the embodiment of the present invention 4.
Embodiment
Please refer to Fig. 1 and Fig. 2, wherein, Fig. 1 is the structural representation of LED device of the present invention, and Fig. 2 is the structural representation of the LED chip module of Fig. 1.LED device of the present invention comprises a substrate 1, is arranged on the LED chip module 2 on substrate 1, and is arranged on substrate 1 and by the coated fluorescent glue 3 of LED chip module 2.
Wherein, this LED chip module 2 comprises the first LED chip 21, the second LED chip 22 and a semi-transparent reflector 23.This first LED chip 21 contacts with substrate 1 and is electrically connected to it.This second LED chip 22 is arranged on the top of this first LED chip 21 and is electrically connected to it.This semi-transparent reflection layer 23 is arranged between this first LED chip 21 and the second LED chip 22, and contacts or contact with one of them with the second LED chip 22 with this first LED chip 21 simultaneously.The light portion that this second LED chip 22 sends is a past side outgoing that covers fluorescent glue 3 directly, partly by a past side outgoing that covers fluorescent glue 3 again after these semi-transparent reflection layer 23 reflections.The light that this first LED chip 21 sends can directly penetrate this semi-transparent reflection layer 23 upwards outgoing.This semi-transparent reflection layer 23 can reflect the light of one side, and can make the light penetration of its opposite side.Thereby make colour mixture evenly and when improving color rendering, can improve again the light emission rate of this LED device.
The concrete structure of this LED chip module 2 is described by a plurality of embodiment below.
embodiment 1:
Please refer to Fig. 3 and Fig. 4, wherein, Fig. 3 is the structural representation of the LED chip module of the embodiment of the present invention 1, and Fig. 4 is the circuit diagram of the LED chip module shown in Fig. 3.Wherein, the LED chip that this first LED chip 21 is positive assembling structure, its light direction is electrode one side bright dipping; The LED chip that the second LED chip 22 is inverted structure, its light direction is epitaxial substrate one side (i.e. the opposite side relative with electrode) of this second LED chip 22.
The P of this first LED chip 21 extremely surface is provided with the first transparency conducting layer 212, and insulating barrier 214 covers the part surface of the first transparency conducting layer 212, and the N that the first metal pad 213 is arranged on this first LED chip is surface and these insulating barrier 214 surfaces extremely.The P of this second LED chip 22 extremely surface is provided with N that the second transparency conducting layer 222, the second metal pads 223 are arranged on this second LED chip 22 extremely surface and these the second transparency conducting layer 222 surfaces.
On the insulating barrier of this first LED chip 21 the first metal pad 213 be connected by salient point soldered ball 215 with the second metal pad 223 of the N utmost point of this second LED chip 22; Equally, the second metal pad 223 of the first metal pad 213 of the N utmost point of this first LED chip 21 and the P utmost point of this second LED chip 22 is connected by salient point soldered ball 215, thereby makes formation series relationship as shown in Figure 4 between this first LED chip 21 and this second LED chip 22.External weld pad 216 is arranged on the first metal pad 213 on this first transparency conducting layer 212 and on this insulating barrier 214, and this LED chip module 2 is by these external weld pad 216 access external drive power supplys.
In the present embodiment, this first LED chip 21 is blue-light LED chip, and this second LED chip 22 is red LED chip.
Semi-transparent reflection layer 23 is arranged on the surface of this second transparency conducting layer 222, and to region that should the first transparency conducting layer 212.This semi-transparent reflection layer is by ABAB by the different material of two kinds of dielectric coefficients ... the multi-layer film structure that forms of mode alternative arrangement, shown in its table 1 composed as follows, wherein, the 1st layer of side being positioned near blue-light LED chip in this multi-layer film structure, the 16th layer of side being positioned near red LED chip.
Level number Material Thickness (nanometer)
1 Nb 2O 5 69.94
2 SiO 2 106.99
3 Nb 2O 5 59.34
4 SiO 2 124.57
5 Nb 2O 5 27.16
6 SiO 2 125.14
7 Nb 2O 5 57.10
8 SiO 2 107.92
9 Nb 2O 5 62.96
10 SiO 2 120.09
11 Nb 2O 5 91.85
12 SiO 2 26.16
13 Nb 2O 5 7.35
14 SiO 2 107.80
15 Nb 2O 5 70.62
16 SiO 2 38.46
16 layers of optical thin-film structure of table 1 semi-transparent reflection layer
Below describe the concrete manufacture method of the LED device of the embodiment of the present invention 1 in detail:
(1) on the first LED chip 21, form the first transparency conducting layer 212, insulating barrier 214, the first metal pad 213, external weld pad 216 and salient point soldered ball 215, concrete step is:
S1: the P at the first LED chip 21 extremely prepares the first transparency conducting layer 212 in surface, preparation method is that sputter coordinates photoetching and etching process.This first LED chip 21 consists of blue-light LED chip, and it is 430nm～480nm that its typical case goes out optical wavelength.The material of this first transparency conducting layer 212 is tin indium oxide (ITO).
S2: prepare an insulating barrier 214 on the first transparency conducting layer 212.By using chemical vapour deposition (CVD) tube furnace, the high temperature silica layer of growing under hot conditions forms insulating barrier 214, and then by photoetching and etching process, insulating barrier 214 is made into default figure.
S3: coordinate photoetching and stripping technology with sputter, extremely form the first metal pad 213 on surface and insulating barrier 214 surfaces at the N of the first LED chip 21, these the first metal pad 213 materials are aluminium or other metal.
S4: coordinate photoetching and stripping technology with electron beam evaporation, prepare external weld pad 216 on the first metal pad 213 of the first transparency conducting layer 212 and insulating barrier 214 correspondences simultaneously.
S5: the upper surface at the first metal pad 213 forms salient point soldered ball 215 by photoetching and electroplating technology, and the material of this salient point soldered ball 215 can be the single metals such as gold, can be also multilayer material or alloy.
(2) on the second LED chip 22, form the second transparency conducting layer 222, the second metal pad 223 and semi-transparent reflection layer 23, concrete step is:
S1: the P at the second LED chip 22 extremely forms the second transparency conducting layer 222 in surface, preparation method is that sputter coordinates photoetching and etching process.This second LED chip 22 consists of red LED chip, and it is 600nm～630nm that its typical case goes out optical wavelength.The material of the second transparency conducting layer 222 is Al-Doped ZnO (AZO).
S2: coordinate photoetching and stripping technology with electron beam evaporation, extremely form the second metal pad 223 on surface and the second transparency conducting layer 222 surfaces at the N of the second LED chip 22, the material of this second metal pad 223 is aluminium or other metal.
S3: coordinate photoetching and stripping technology with sputter, form the semi-transparent reflection layer 23 with multi-layer film structure on the second transparency conducting layer 222 surfaces.
(3) the second LED chip 22 upside-down mountings are connected on the first LED chip 21, the second metal pad 223 is connected with salient point soldered ball 215.It can be after pressurized, heated, to add ultrasonic nation to determine bonding method that this upside-down mounting connects again.So far, completed the preparation of LED chip module 2 in luminescent device.
(4) LED chip module 2 is installed on substrate 1, and the external weld pad 216 in LED chip module 2 is electrically connected to corresponding electrode of substrate path.This substrate 1 is the ceramic substrate with wiring, and this installation method can be to use silver slurry bonding, and this electric connection mode can be to beat gold thread.
(5) fluorescent glue 3 is installed on substrate 1.This fluorescent glue 3 is the mixture of yellow fluorescent powder and silica gel.
embodiment 2:
Refer to Fig. 5, it is the structural representation of the LED chip module of the embodiment of the present invention 2.Wherein, the LED chip that this first LED chip 21 and the second LED chip 22 are vertical stratification.
The N that the first metal pad 213 is arranged on this first LED chip 21 is surface extremely, and salient point soldered ball 215 is arranged on the upper surface of this first metal pad 213.The N that semi-transparent reflection layer 23 is arranged on this first LED chip 21 beyond this first metal pad 213 is surface extremely.The P that the second transparency conducting layer 222 covers this second LED chip 22 is surface extremely.This second LED chip 22 is arranged on the top of this first LED chip 21, and it is fixing that this second transparency conducting layer 222 is contacted with this semi-transparent reflection layer 23 and salient point soldered ball 215.The P that external weld pad 216 covers respectively this first LED chip 21 is surface and the N that is arranged on this second LED chip 22 surface extremely extremely.
In the present embodiment, this first LED chip 21 is red LED chip, and this second LED chip 22 is blue-light LED chip.Below this semi-transparent reflection layer 23 can allow, up the ruddiness of outgoing directly sees through, and reflects the down blue light of outgoing of top.Between this first LED chip 21 and this second LED chip 22, form series relationship as shown in Figure 4.
Below describe the concrete manufacture method of the LED device of the embodiment of the present invention 2 in detail:
(1) on the first LED chip 21, form external weld pad 216, the first metal pad 213, salient point soldered ball 215 and semi-transparent reflection layer 23, concrete step is:
S1: coordinate photoetching and etching process with sputter, at the external weld pad 216 of P utmost point surface coverage of the first LED chip 21, the material of this external weld pad 216 is aluminium, other metal or alloy.The first LED chip 21 consists of red LED chip, and it is 600nm～630nm that its typical case goes out optical wavelength.
S2: coordinate photoetching and stripping technology with electron beam evaporation, form the first metal pad 213 at the N of the first LED chip 21 on extremely.The material of this first metal pad 213 is nickel, other metal or alloy.
S3: to electroplate cooperation photoetching process, form salient point soldered ball 215 on this first metal pad 213.The material of this salient point soldered ball 215 is tin, other metal or alloy.
S4: coordinate photoetching and stripping technology with magnetron sputtering, the region covering one beyond the N of the first LED chip 21 extremely goes up the first metal pad 213 has the semi-transparent reflection layer 23 of multi-layer film structure.
(2) on the second LED chip 22, form the second transparency conducting layer 222 and external weld pad 216, concrete step is:
S1: coordinate photoetching and etching process with sputter, at P utmost point surface coverage one second transparency conducting layer 222 of the second LED chip 22.The material of this second transparency conducting layer 222 is tin indium oxide (ITO).This second LED chip 22 consists of blue-light LED chip, and it is 430nm～480nm that its typical case goes out optical wavelength.
S2: coordinate photoetching and stripping technology with electron beam evaporation, form external weld pad 216 at the N of the second LED chip 22 on extremely, its material is aluminium, other metal or alloy.
(3) the second LED chip 22 is installed on the first LED chip 21, the second transparency conducting layer 222 is contacted fixing with salient point soldered ball 215 and semi-transparent reflection layer 23, this second transparency conducting layer 222 is realized and being electrically connected to salient point soldered ball 215.This installation method adopts reflow soldering process.So far, completed the preparation of LED chip module 2 in LED device.
(4) LED chip module 2 is installed on substrate 1, and the external weld pad 216 that the N of the external weld pad 216 that the P of the first LED chip 21 is extremely gone up and the second LED chip 22 extremely goes up is electrically connected to corresponding electrode of substrate path.This substrate 1 is the ceramic substrate with wiring, and this installation method can be to use silver slurry bonding, and this electric connection mode can be to beat gold thread.
(5) fluorescent glue 3 is installed on substrate 1.This fluorescent glue 3 is the mixture of yellow fluorescent powder and silica gel.
embodiment 3:
Please refer to Fig. 6 and Fig. 7, Fig. 6 is the structural representation of the LED chip module of the embodiment of the present invention 3, and Fig. 7 is the circuit diagram of the LED chip module shown in Fig. 6.Wherein, the LED chip that this first LED chip 21 and the second LED chip 22 are inverted structure, its light direction is respectively epitaxial substrate one side of this first LED chip 21 and epitaxial substrate one side (i.e. the opposite side relative with electrode) of this two LED chip 22.
The N that one metal conducting layer 218 covers this first LED chip 21 is surface extend the one end that is covered to epitaxial substrate surface along its side extremely; And this metal conducting layer 218 P surface extend the other end that is covered to epitaxial substrate surface along its side extremely of also covering this first LED chip 21.One insulating barrier 214 is arranged between side that this P is extremely corresponding and this metal conducting layer 218 and extends to epitaxial substrate surface, for avoiding metal conducting layer 218 directly the P utmost point of this first LED chip 21 to be connected to conducting with the N utmost point.Semi-transparent reflection layer 23 is arranged on the epitaxial substrate surface beyond metal conducting layer 218 regions of this first LED chip 21.
P utmost point surface coverage one second transparency conducting layer 222 of this second LED chip 22.The N that the second metal pad 223 is arranged on this second LED chip 22 is surface and on this second transparency conducting layer 222 extremely.
This LED chip module 2 also comprises a substrate 24, and substrate surface is provided with metal line 242, and external weld pad 216 is arranged on this metal line 242.
The second metal pad 223 of this second LED chip 22 is fixed on by salient point soldered ball 215 on the metal conducting layer 218 on epitaxial substrate surface of this first LED chip 21.The P utmost point of this first LED chip 21 and the N extremely metal conducting layer 218 on surface are arranged on the metal line 242 of this substrate 24 by salient point soldered ball 215.
In the present embodiment, this first LED chip 21 is red LED chip, and this second LED chip 22 is blue-light LED chip.Below this semi-transparent reflection layer 23 can allow, up the ruddiness of outgoing directly sees through, and reflects the down blue light of outgoing of top.Between this first LED chip 21 and this second LED chip 22, form relation in parallel as shown in Figure 7.
Below describe the concrete manufacture method of the LED device of the embodiment of the present invention 3 in detail:
(1) on the first LED chip 21, form insulating barrier 214, metal conducting layer 218, semi-transparent reflection layer 23 and salient point soldered ball 215, concrete step is:
S1: prepare an insulating barrier 213 on the first LED chip 21.This insulating barrier 213 is by using chemical vapour deposition (CVD) tube furnace, the high temperature silica layer of growing under hot conditions, and then by photoetching and etching process, insulating barrier is formed to required figure.The first LED chip 21 consists of red LED chip, and it is 600nm～630nm that its typical case goes out optical wavelength.
S2: to electroplate cooperation photoetching process, form metal conducting layer 218 on the first LED chip 21, the material of this metal conducting layer 218 is copper or other metal.
S3: coordinate photoetching and stripping technology with sputter, there is the semi-transparent reflection layer 23 of multi-layer film structure in the epitaxial substrate upper surface formation of the first LED chip 21.
S4: on the lip-deep metal conducting layer of epitaxial substrate 218 surfaces of this first LED chip 21, form salient point soldered ball 215 by photoetching and electroplating technology, the material of this salient point soldered ball 215 can be the single metals such as gold, can be also multilayer material or alloy.
(2) on substrate 24, form metal line 242, salient point soldered ball 215 and external weld pad 216.
S1: coordinate photoetching and etching process with sputter, form metal line 242 on substrate 24.The material of substrate 24 can be the silicon chip of surface process high temperature oxidation process, and the material of metal line 242 can be aluminium or other metal and alloy.
S2: the upper surface at metal line 242 forms salient point soldered ball 215 by photoetching and electroplating technology, and the material of this salient point soldered ball 215 can be the single metals such as gold, can be also multilayer material or alloy.
S3: coordinate photoetching and stripping technology with electron beam evaporation, form external weld pad 216 on metal line 242.
(3) the first LED chip 21 nations are connected on substrate 24 surely, the N utmost point of the first LED chip 21 is connected with the salient point soldered ball 215 on substrate 24 with the extremely surperficial metal conducting layer 218 of P.It can be after pressurized, heated, to add ultrasonic nation to determine bonding method that this upside-down mounting connects again.
(4) on the second LED chip 22, form the second transparency conducting layer 222 and the second metal pad 223, concrete step is:
S1: coordinate photoetching and etching process by sputter, extremely form one second transparency conducting layer 222 in surface at the P of the second LED chip 22.This second LED chip 22 consists of blue-light LED chip, and it is 430nm～480nm that its typical case goes out optical wavelength.The material of this transparency conducting layer 222 is tin indium oxide (ITO).
S2: coordinate photoetching and stripping technology with electron beam evaporation, extremely form the second metal pad 223 on surface and transparency conducting layer 222 at the N of this second LED chip 22, the material of this metal pad 223 is aluminium or other metal.
(5) the second LED chip 22 upside-down mountings are connected on the first LED chip 21, the second metal pad 223 is connected with the salient point soldered ball 215 on this first LED chip 21.It can be after pressurized, heated, to add ultrasonic nation to determine bonding method that this upside-down mounting connects again.So far, completed the preparation of the LED chip module 2 of this LED device.And formation series relationship as shown in Figure 7.
(6) LED chip module 2 is installed on substrate 1, and the external weld pad 216 in LED chip module 2 is electrically connected on corresponding electrode of substrate path.This substrate 1 is the ceramic substrate with wiring, and this installation method can be to use silver slurry bonding, and this electric connection mode can be to beat gold thread.
(7) fluorescent glue 3 is installed on substrate 1.This fluorescent glue 3 is the mixture of yellow fluorescent powder and silica gel.
embodiment 4:
Refer to Fig. 8, it is the structural representation of the LED chip module of the embodiment of the present invention 4.Wherein, the LED chip that this first LED chip 21 is positive assembling structure, the LED chip that this second LED chip 22 is vertical stratification.
The P of this first LED chip 21 extremely surface is provided with the first transparency conducting layer 212, the N that the first metal pad 213 is arranged on this first LED chip is surface and the first transparency conducting layer 212 surfaces extremely, and salient point soldered ball 215 is arranged on the upper surface of the first metal pad 213 being connected with this first transparency conducting layer 212.On the first metal pad 213 that external weld pad 216 is arranged on this first transparency conducting layer 212 and the N of this first LED chip 21 extremely goes up.Semi-transparent reflection layer 23 is arranged on the upper surface of this first transparency conducting layer 212 beyond this first metal pad 213 and external weld pad 216 regions.The P that the second transparency conducting layer 222 covers this second LED chip 22 is surface extremely, and the N that the second metal pad 223 is arranged on this second LED chip 22 is surface extremely.This second LED chip 22 is arranged on the top of this first LED chip 21, and it is fixing that this second transparency conducting layer 222 is contacted with this semi-transparent reflection layer 23 and salient point soldered ball 215.The first metal pad 213 that metal wire 219 is extremely gone up for connecting the N of the second metal pad 223 and the first LED chip 21.
In the present embodiment, this first LED chip 21 is red LED chip, and this second LED chip 22 is blue-light LED chip.Below this semi-transparent reflection layer 23 can allow, up the ruddiness of outgoing directly sees through, and reflects the down blue light of outgoing of top.Between this first LED chip 21 and this second LED chip 22, form relation in parallel as shown in Figure 7.
Below describe the concrete manufacture method of the LED device of the embodiment of the present invention 4 in detail:
(1) on the first LED chip 21, form the first transparency conducting layer 212, the first metal pad 213, salient point soldered ball 215, external weld pad 216 and semi-transparent reflection layer 23, concrete step is:
S1: the P at the first LED chip 21 extremely prepares the first transparency conducting layer 212 in surface, preparation method is that sputter coordinates photoetching and etching process.This first LED chip 21 consists of red LED chip, and it is 600nm～630nm that its typical case goes out optical wavelength.The material of this first transparency conducting layer 212 is tin indium oxide (ITO).
S2: coordinate photoetching and stripping technology with sputter, extremely form the first metal pad 213 on surface and the first transparency conducting layer 212 surfaces at the N of the first LED chip 21, these the first metal pad 213 materials are aluminium or other metal.
S3: at the upper surface of the first metal pad 213 being connected with the first transparency conducting layer 212, form salient point soldered ball 215 by photoetching and electroplating technology, the material of this salient point soldered ball 215 can be the single metals such as gold, can be also multilayer material or alloy.
S4: coordinate photoetching and stripping technology with electron beam evaporation, prepare external weld pad 216 simultaneously on the first extremely corresponding metal pad 213 of the N of the first transparency conducting layer 212 and the first LED chip 21.
S5: coordinate photoetching and stripping technology with magnetron sputtering, at the upper surface of this first transparency conducting layer 212 except the first metal pad 213 and external weld pad 216 regions, covering one has the semi-transparent reflection layer 23 of multi-layer film structure.
(2) on the second LED chip 22, form the second transparency conducting layer 222 and the second metal pad 223, concrete step is:
S1: coordinate photoetching and etching process with sputter, at P utmost point surface coverage one second transparency conducting layer 222 of the second LED chip 22.The material of this second transparency conducting layer 222 is tin indium oxide (ITO).This second LED chip 22 consists of blue-light LED chip, and it is 430nm～480nm that its typical case goes out optical wavelength.
S2: coordinate photoetching and stripping technology with electron beam evaporation, form the second metal pad 223 at the N of the second LED chip 22 on extremely, its material is aluminium, other metal or alloy.
(3) the second LED chip 22 is installed on the first LED chip 21, the second transparency conducting layer 222 is contacted fixing with salient point soldered ball 215 and semi-transparent reflection layer 23, this second transparency conducting layer 222 is realized and being electrically connected to salient point soldered ball 215, and this installation method adopts reflow soldering process.Use metal wire 219 that 213 realizations of the first metal pad that the second metal pad 223 is extremely gone up with the N of this first LED chip 21 are electrically connected to.So far, completed the preparation of LED chip module 2 in LED device.
(4) LED chip module 2 is installed on substrate 1, and the external weld pad 216 in LED chip module 2 is electrically connected to corresponding electrode of substrate path.This substrate 1 is the ceramic substrate with wiring, and this installation method can be to use silver slurry bonding, and this electric connection mode can be to beat gold thread.
(5) fluorescent glue 3 is installed on substrate 1.This fluorescent glue 3 is the mixture of yellow fluorescent powder and silica gel.
With respect to prior art, the present invention will have the first LED chip and the stacked setting of the second LED chip of different wavelength emergent light, be equipped with again corresponding fluorescent material, and between this first LED chip and the second LED chip, semi-transparent reflection layer is set, the LED chip that makes light under semi-transparent reflection layer can directly penetrate semi-transparent reflection layer and make light on semi-transparent reflection layer be reflected Er Bubei lower floor simultaneously absorbs, thereby realizing the uniform while of high color rendering index (CRI) and colour mixture, improving the light extraction efficiency of LED device.Further, by electrode redistribution technology, can realize simply the first LED chip of levels and series, parallel or the series-parallel connection between the second LED chip.
The present invention is not limited to above-mentioned execution mode, if various changes of the present invention or distortion are not departed to the spirit and scope of the present invention, within if these changes and distortion belong to claim of the present invention and equivalent technologies scope, the present invention is also intended to comprise these changes and distortion.

Claims (32)

1. a white light LED part, is characterized in that: comprise
One LED chip module, this LED chip module comprises at least one the first LED chip and at least one second LED chip of stacked setting, and be arranged on a semi-transparent reflector between this first LED chip and the second LED chip, the light of the direct transmission one of this semi-transparent reflection layer side, and reflect the light of its opposite side;
One substrate; And
One fluorescent glue;
This LED chip module is arranged on substrate, and this fluorescent glue is arranged on substrate and by LED chip module and is coated.
2. white light LED part according to claim 1, is characterized in that: one of this first LED chip and this second LED chip are blue-light LED chip, and another kind is red LED chip, and this fluorescent glue is the mixture of yellow fluorescent powder and silica gel.
3. white light LED part according to claim 1, it is characterized in that: this first LED chip is packed LED chip, the P that one first transparency conducting layer covers this first LED chip is surface extremely, one insulating barrier covers the part surface of this first transparency conducting layer, and the N that 2 first metal pads are separately positioned on this first LED chip is surface and this surface of insulating layer extremely; This second LED chip is flip LED chips, and the P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that 2 second metal pads are separately positioned on this second LED chip is surface and this second layer at transparent layer extremely; The first metal pad of the surface of insulating layer of this first LED chip is connected by salient point soldered ball with the second metal pad of the N utmost point of this second LED chip, and the first metal pad of the N utmost point of this first LED chip is connected by salient point soldered ball with the second metal pad of the P utmost point of this second LED chip.
4. white light LED part according to claim 3, is characterized in that: also comprise two external weld pads, it is arranged on first metal pad of surface of insulating layer of this first transparency conducting layer and this first LED chip.
5. according to the white light LED part described in claim 3 or 4, it is characterized in that: this semi-transparent reflection layer is arranged on this first layer at transparent layer, or be arranged on this second layer at transparent layer.
6. white light LED part according to claim 1, it is characterized in that: the LED chip that this first LED chip and this second LED chip are vertical stratification, the N that one first metal pad is arranged on this first LED chip is surface extremely, and a salient point soldered ball is arranged on the upper surface of this first metal pad; The P that one second transparency conducting layer covers this second LED chip is surface extremely; This second LED chip is arranged on the top of this first LED chip, and this second transparency conducting layer contacts with salient point soldered ball.
7. white light LED part according to claim 6, is characterized in that: also comprise two external weld pads, its P that covers respectively this first LED chip is surface and the N that is arranged on this second LED chip surface extremely extremely.
8. according to the white light LED part described in claim 6 or 7, it is characterized in that: the N that this semi-transparent reflection layer is arranged on this first LED chip is the region beyond this first metal pad on surface extremely, and this second transparency conducting layer contacts with this semi-transparent reflection layer and salient point soldered ball.
9. white light LED part according to claim 1, is characterized in that: the LED chip that this first LED chip and the second LED chip are inverted structure; The N that one metal conducting layer covers this first LED chip is surface extend the one end that is covered to epitaxial substrate surface along its side extremely, and this metal conducting layer P surface extend the other end that is covered to epitaxial substrate surface along its side extremely of also covering this first LED chip; The P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that 2 second metal pads are separately positioned on this second LED chip is surface and on this second transparency conducting layer extremely; This LED chip module also comprises a substrate, and substrate surface is provided with metal line; The second metal pad of this second LED chip is fixed on by salient point soldered ball on the metal conducting layer on epitaxial substrate surface of this first LED chip; The P utmost point of this first LED chip and the N extremely metal conducting layer on surface are arranged on the metal line of this substrate by salient point soldered ball.
10. white light LED part according to claim 9, is characterized in that: also comprise two external weld pads, it is separately positioned on the metal line that the P utmost point is connected respectively with the N utmost point.
11. according to the white light LED part described in claim 9 or 10, it is characterized in that: also comprise an insulating barrier, it is arranged between the epitaxial substrate surface and this metal conducting layer that this P is extremely corresponding, and extends to the side that P is extremely corresponding.
12. according to the white light LED part described in claim 9 or 10, it is characterized in that: this semi-transparent reflection layer is arranged on the epitaxial substrate surface beyond the metallic conduction layer region of this first LED chip, or is arranged on this second layer at transparent layer.
13. white light LED parts according to claim 1, it is characterized in that: the LED chip that this first LED chip is positive assembling structure, the P that one first transparency conducting layer is arranged on this first LED chip is surface extremely, the N that one first metal pad is arranged on this first LED chip is surface and the first layer at transparent layer extremely, and a salient point soldered ball is arranged on the upper surface of the first metal pad being connected with this first transparency conducting layer; The LED chip that this second LED chip is vertical stratification, the P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that one second metal pad is arranged on this second LED chip is surface extremely; This second LED chip 22 is arranged on the top of this first LED chip, and it is fixing that this second transparency conducting layer is contacted with this salient point soldered ball, and a metal wire connects the first metal pad that the N of the second metal pad and the first LED chip extremely goes up.
14. white light LED parts according to claim 13, is characterized in that: also comprise two external weld pads, on the first metal pad that it is arranged on this first transparency conducting layer and the N of this first LED chip extremely goes up.
15. according to the white light LED part described in claim 13 or 14, it is characterized in that: this semi-transparent reflection layer is arranged on the upper surface of this first transparency conducting layer beyond this first metal pad and external weld pad region, and contacts with this second transparency conducting layer.
The manufacture method of 16. 1 kinds of LED devices, is characterized in that: comprise the steps
1) manufacture a LED chip module: the top that the second LED chip is arranged on to the first LED chip, and a semi-transparent reflector is arranged between this second LED chip and the first LED chip, the light of the direct transmission one of this semi-transparent reflection layer side, and reflect the light of its opposite side;
2) this LED chip module is arranged on a substrate;
3) fluorescent glue is arranged on this substrate, and this LED chip module is coated or partly coated.
17. manufacture methods according to claim 16, is characterized in that: described step 1) also comprises the steps:
Step S1: the P at the first LED chip extremely forms the first transparency conducting layer in surface; Then, in this first layer at transparent layer, form an insulating barrier; Then, the N at this first LED chip extremely forms the first metal pad with this surface of insulating layer in surface; Finally, the upper surface at this first metal pad forms salient point soldered ball;
Step S2: the P at the second LED chip extremely forms the second transparency conducting layer on surface; Then, at the N of this second LED chip, extremely in surface and this second layer at transparent layer, form the second metal pad; Finally, on the surface of this second transparency conducting layer, form semi-transparent reflection layer;
Step S3: the second LED chip upside-down mounting is connected on the first LED chip, the second metal pad is connected with salient point soldered ball.
18. manufacture methods according to claim 17, is characterized in that: at step S1, also comprise step: on this first transparency conducting layer and the first metal pad corresponding to insulating barrier, form external weld pad.
19. manufacture methods according to claim 16, is characterized in that: described step 1) also comprises the steps:
Step S1: first, at the external weld pad of the P of the first LED chip utmost point surface coverage; Then, at the N of the first LED chip, form the first metal pad on extremely; Then, on this first metal pad, form salient point soldered ball; Finally, the region beyond the N of the first LED chip extremely goes up the first metal pad covers a semi-transparent reflector;
Step S2: first, at the P of the second LED chip utmost point surface coverage one second transparency conducting layer; Then, at the N of the second LED chip, form external weld pad on extremely
Step S3: the second LED chip is installed on the first LED chip, the second transparency conducting layer is contacted with salient point soldered ball and semi-transparent reflection layer.
20. manufacture methods according to claim 16, is characterized in that: described step 1) also comprises the steps:
Step S1: first, prepare an insulating barrier on the first LED chip; Then, on the first LED chip, form metal conducting layer; Then, the epitaxial substrate upper surface at the first LED chip forms semi-transparent reflection layer; Finally, on the lip-deep metal conducting layer of the epitaxial substrate surface of this first LED chip, form salient point soldered ball;
Step S2: first, form metal line on substrate; Then, the upper surface at metal line forms salient point soldered ball;
Step S3: the first LED chip nation is connected on substrate surely, the N utmost point of the first LED chip is connected with the salient point soldered ball on substrate with the extremely surperficial metal conducting layer of P;
Step S4: first, extremely form one second transparency conducting layer in surface at the P of the second LED chip; At the N of this second LED chip, extremely on surface and transparency conducting layer, form the second metal pad;
Step S5: the second LED chip upside-down mounting is connected on the first LED chip, the second metal pad is connected with the salient point soldered ball on this first LED chip.
21. manufacture methods according to claim 20, is characterized in that: at step S2, also comprise step: on metal line, form external weld pad.
22. manufacture methods according to claim 16, is characterized in that: described step 1) also comprises the steps:
Step S1: first, extremely form the first transparency conducting layer in surface at the P of the first LED chip 21; Then, the N of the first LED chip 21 extremely surface and the first layer at transparent layer on form the first metal pad; Then, the upper surface at the first metal pad corresponding to the first transparency conducting layer forms salient point soldered ball; Finally, at the upper surface of this first transparency conducting layer except the first metal pad region, cover a semi-transparent reflector;
Step S2: first, at the P of the second LED chip utmost point surface coverage one second transparency conducting layer; Then, at the N of the second LED chip, form the second metal pad on extremely;
Step S3: first, the second LED chip is arranged on the first LED chip, the second transparency conducting layer is contacted fixing with salient point soldered ball with semi-transparent reflection layer; Then, a metal wire is arranged on the first metal pad that the N of the second metal pad and this first LED chip extremely goes up and makes its two connection.
23. manufacture methods according to claim 22, is characterized in that: at step S1, also comprise step: on the first extremely corresponding metal pad of the N of this first transparency conducting layer and the first LED chip, form external weld pad.
24. 1 kinds of LED chip modules, it is characterized in that: this LED chip module comprises at least one the first LED chip and at least one second LED chip of stacked setting, and be arranged on a semi-transparent reflector between this first LED chip and the second LED chip, the light of the direct transmission one of this semi-transparent reflection layer side, and reflect the light of its opposite side.
25. LED chip modules according to claim 24, it is characterized in that: this first LED chip is packed LED chip, the P that one first transparency conducting layer covers this first LED chip is surface extremely, one insulating barrier covers the part surface of this first transparency conducting layer, and the N that 2 first metal pads are separately positioned on this first LED chip is surface and this surface of insulating layer extremely; This second LED chip is flip LED chips, and the P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that 2 second metal pads are separately positioned on this second LED chip is surface and this second layer at transparent layer extremely; The first metal pad of the surface of insulating layer of this first LED chip is connected by salient point soldered ball with the second metal pad of the N utmost point of this second LED chip, and the first metal pad of the N utmost point of this first LED chip is connected by salient point soldered ball with the second metal pad of the P utmost point of this second LED chip.
26. LED chip modules according to claim 25, is characterized in that: this semi-transparent reflection layer is arranged on this first layer at transparent layer, or are arranged on this second layer at transparent layer.
27. LED chip modules according to claim 24, it is characterized in that: the LED chip that this first LED chip and this second LED chip are vertical stratification, the N that one first metal pad is arranged on this first LED chip is surface extremely, and a salient point soldered ball is arranged on the upper surface of this first metal pad; The P that one second transparency conducting layer covers this second LED chip is surface extremely; This second LED chip is arranged on the top of this first LED chip, and this second transparency conducting layer contacts with salient point soldered ball.
28. LED chip modules according to claim 27, it is characterized in that: the N that this semi-transparent reflection layer is arranged on this first LED chip is the region beyond this first metal pad on surface extremely, and this second transparency conducting layer contacts with this semi-transparent reflection layer and salient point soldered ball.
29. LED chip modules according to claim 24, is characterized in that: the LED chip that this first LED chip and the second LED chip are inverted structure; The N that one metal conducting layer covers this first LED chip is surface extend the one end that is covered to epitaxial substrate surface along its side extremely, and this metal conducting layer P surface extend the other end that is covered to epitaxial substrate surface along its side extremely of also covering this first LED chip; The P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that 2 second metal pads are separately positioned on this second LED chip is surface and on this second transparency conducting layer extremely; This LED chip module also comprises a substrate, and substrate surface is provided with metal line; The second metal pad of this second LED chip is fixed on by salient point soldered ball on the metal conducting layer on epitaxial substrate surface of this first LED chip; The P utmost point of this first LED chip and the N extremely metal conducting layer on surface are arranged on the metal line of this substrate by salient point soldered ball.
30. LED chip modules according to claim 29, is characterized in that: this semi-transparent reflection layer is arranged on the epitaxial substrate surface beyond the metallic conduction layer region of this first LED chip, or is arranged on this second layer at transparent layer.
31. LED chip modules according to claim 24, it is characterized in that: the LED chip that this first LED chip is positive assembling structure, the P that one first transparency conducting layer is arranged on this first LED chip is surface extremely, the N that one first metal pad is arranged on this first LED chip is surface and the first layer at transparent layer extremely, and a salient point soldered ball is arranged on the upper surface of the first metal pad being connected with this first transparency conducting layer; The LED chip that this second LED chip is vertical stratification, the P that one second transparency conducting layer covers this second LED chip is surface extremely, and the N that one second metal pad is arranged on this second LED chip is surface extremely; This second LED chip 22 is arranged on the top of this first LED chip, and it is fixing that this second transparency conducting layer is contacted with this salient point soldered ball, and a metal wire connects the first metal pad that the N of the second metal pad and the first LED chip extremely goes up.
32. LED chip modules according to claim 31, is characterized in that: this semi-transparent reflection layer is arranged on the upper surface of this first transparency conducting layer beyond this first metal pad and external weld pad region, and contacts with this second transparency conducting layer.
CN201110150320.1A 2011-06-07 2011-06-07 High-color-rendering light-emitting diode (LED) chip module, white light LED device and manufacturing method thereof Active CN102208402B (en)

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