Summary of the invention
The technical problem to be solved in the present invention provides a kind of LED lamp that is used for replacing compact fluorescent lamp, makes its whole service life longer, and is suitable for concentrating large tracts of land to use, thereby overcomes the deficiency of existing LED lamp.
For solving the problems of the technologies described above, a kind of LED lamp that is used for replacing compact fluorescent lamp of the present invention, the interchange that mainly comprises pcb board and be installed on the same pcb board drives chip and a plurality of LED light emitting diode, and wherein, the LED light emitting diode drives chip drives by exchanging.
As a kind of improvement of the present invention, described pcb board is fixed on the lamp adapter assembly, and is fixed with radiator at the back side of pcb board.
The front of described pcb board and end also are fixed with trim.
Described interchange drives chip and comprises voltage input module, voltage distribution module and many group buffering-voltage comparison module and semiconductor field effect transistor MOSFET, wherein: the source electrode of first MOSFET is connected with earth potential, grid is directly connected in an input of this group buffering-voltage comparison module, is connected in the output of voltage input module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip; The source electrode of other MOSFET is by can equivalence being that the element group of resistance is connected with earth potential, grid is connected in an input of this group buffering-voltage comparison module, is connected in the output of preceding pool of buffer-voltage comparison module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip; Another input of above-mentioned buffering-voltage comparison module is connected with the voltage distribution module; The output of voltage input module also is connected with the initiating terminal on LED light emitting diode series line road, and is connected in earth potential by the voltage distribution module.
Described voltage input module is a semiconductor field effect transistor, and its grid is connected with the external voltage input, and drain electrode is through can equivalence being connected in earth potential for the element group of resistance, and source electrode is the output of voltage input module.
Described interchange drives chip and also comprises circuit of power factor correction, this circuit of power factor correction is a triode, its colelctor electrode is connected with the grid of voltage input module and is connected with the external voltage input by inductance by the diode that a forward connects, and emitter stage is connected with earth potential by the diode that oppositely connects.
Described semiconductor field effect transistor MOSFET is V-type groove field-effect transistor VMOS.
Described voltage input module is enhancement mode metal-oxide layer-semiconductor field effect transistor.
Described interchange drives chip and also is connected with rectification circuit, EMC circuit and surge absorbing circuit.
Described EMC circuit mainly comprises the inductance L that is positioned on the main line, and the capacitor C in parallel with rectification circuit.
After adopting such design, the present invention has the following advantages at least:
1, drive circuit (comprising EMC and surge absorbing circuit) and whole LED light emitting diode all are installed on the PCB, and one time paster is finished, and has simplified production technology and assembly technology greatly, and has improved reliability of products;
2, owing to do not need Standalone Drives, thus the whole LED fluorescent tube, profile is small and exquisite, and diameter and length are all similar with the 15W electricity-saving lamp, can directly replace in horizontal slotting Down lamp.
The specific embodiment
See also shown in Figure 1, the present invention is used for replacing the LED lamp of compact fluorescent lamp, mainly comprise pcb board 1, and the interchange that is installed on the same pcb board 1 drives chip 2, with a plurality of LED light emitting diodes 3, in addition, pcb board 1 can be fixed on the lamp adapter assembly 4, and be fixed with radiator 5 at the back side of pcb board 1, at the front and the end fixing trim cover 6 of pcb board 1.
Please cooperate and consult shown in Figure 2ly, the LED light emitting diode is by exchange driving chip drives, exchanges to drive chip and also be connected with rectification circuit, EMC (Electro Magnetic Compatibility, Electro Magnetic Compatibility) circuit and surge absorbing circuit etc.Wherein, the EMC circuit mainly comprises the inductance L that is positioned on the main line, and the capacitor C in parallel with rectification circuit.
Please cooperate and consult shown in Figure 3ly, interchange used in the present invention drives chip and mainly comprises voltage input module, voltage distribution module and many group buffering-voltage comparison module 21 and semiconductor field effect transistor MOSFET Q1-Qn.
Wherein, semiconductor field effect transistor MOSFET Q1-Qn can adopt V-type groove field-effect transistor VMOS.The source electrode of MOSFET Q1 links to each other with earth potential, grid is directly connected in an input of first group of buffering-voltage comparison module, is connected in the output of voltage input module simultaneously, another input of first group of buffering-voltage comparison module is connected to the tie point place between series resistance R1 and the R2 respectively, first group of buffering-voltage comparison module output links to each other with the grid of MOSFET Q2, and the drain electrode of MOSFET Q1 is connected on the series circuit of external LED light emitting diode as the output of drive unit.
The source electrode of MOSFET Qn (n>1) is by resistance or can equivalence be that the element group of resistance links to each other with earth potential, grid is connected in an input of n group buffering-voltage comparison module, is connected in the output of preceding pool of buffer-voltage comparison module simultaneously, another input of n group buffering-voltage comparison module is connected to the tie point place between series resistance R2n-1 and the R2n, and the drain electrode of MOSFET Qn is connected on the series circuit of external LED light emitting diode as the output of drive unit.
The voltage distribution module is promptly by above-mentioned R1 and R2, and the n bar branch road that R2n-1 and R2n form composes in parallel.
The voltage input module can adopt enhancement mode metal-oxide layer-semiconductor field effect transistor MOSFET Q0, and its output is connected with the initiating terminal of the series circuit of LED light emitting diode, and is connected in earth potential by the voltage distribution module.
In addition, exchange the driving chip and also comprise circuit of power factor correction, this circuit of power factor correction is triode Qi, its colelctor electrode is connected with the grid of voltage input module Q0 and is connected with external voltage input VIN by inductance L by the diode D1 that a forward connects, and emitter stage is connected with earth potential by the diode D2 that oppositely connects.
The grid of voltage input module Q0 is connected with external voltage input VIN, and the drain electrode of Q0 is connected in earth potential through a resistance R x, the source electrode of Q0 be the voltage input module output, be connected in earth potential through the voltage distribution module.The LED assembly that drives among the figure is 6 LED lamp sections, and every section LED is made up of two LED lamps, and wherein each LED lamp forms by the series connection of 6 LED light emitting diodes, and the pressure drop of each LED is 3V, so both end voltage is 3 * 12=36V during each LED lamp Duan Quanliang.
When line voltage distribution from VIN when input end, the grid voltage of the Q0 that links to each other with the VIN port is in high potential, Q0 begins conducting, the output voltage of the source electrode of Q0 is that VDD rises thereupon; Then the grid voltage of transistor MOSFET Q1 rises, and Q1 just begins conducting, and LED1, LED2 begin to light luminous; The input 1A of first group of buffering-voltage comparison module is a high potential simultaneously; If the voltage of voltage input end VIN is lower, the input 1B of first group of buffering-voltage comparison module is an electronegative potential, first group of buffering-voltage comparison module output electronegative potential, and the grid of Q2 is in earth potential, and Q2 is in cut-off state.By that analogy, Q3-Q6 also is in cut-off state.
Along with VIN end input voltage increases, Q1 begins to enter the voltage that saturation state and resistance R 1 share and increases, the 1B end-point voltage raises gradually and reaches the forward threshold voltage of Schmidt trigger, Schmidt trigger is triggered, second group of buffering-voltage comparison module output high potential, Q2 conducting this moment, LED3, LED4 begin to light luminous when input voltage surpasses 36V.This moment predefined R3 and R4 the ratio of resistance value, still can make second group of voltage at end points 2B place be lower than the forward threshold voltage of the interior Schmidt trigger of buffering-voltage comparison module, Q3-Q6 still is in cut-off state.
Continuation increase along with VIN end input voltage, Q2 begins to enter the forward threshold voltage that voltage that saturation state and resistance R 3 share increases to Schmidt trigger in second group of buffering-voltage comparison module, Schmidt trigger is triggered, the Q3 conducting, LED5, LED6 begin to light luminous when input voltage surpasses 72V, and Q4-Q6 ends.
By that analogy, along with input voltage raises gradually, when input voltage value surpasses 180V, the Q6 conducting, LED11 and LED12 light; When input voltage value surpassed 216V, this moment, Q6 entered saturation state, and the whole LED lighting device reaches the brightest.
By above type of drive as can be known, interchange of the present invention drives chip, just can realize light modulation as long as change line voltage distribution, and when large tracts of land was used, the present invention had more promotional value than existing electricity-saving lamp.Therefore, can use common controllable silicon dimmer easily and be implemented.Drive 72 LED light emitting diodes in the example altogether, calculate with every crystal grain 0.065W, 0.065 * 72=4.68W can form the most frequently used home lighting light fixture.The lighting of forming different capacity if desired only needs to change RX, is easy to just can form the different types of LED light fixture of 1W-7W.
Wherein the operation principle of inductance L is: the LED light emitting semiconductor device itself is a kind of diode, and lighting LED can be direct current, also can be unidirectional pulsating direct current.When external power source is alternating current, avoid also can using alternating current under the prerequisite of alternating current backward voltage with the luminescent device punch through damage in attention.LED is lighted in the 100Hz pulsating direct current of using full-wave rectification bridge to produce, utilizes " pulsation " this characteristic, in input circuit, seals in an inductance L.Utilize electric current to flow through the hysteresis characteristic of inductance, easily power factor (PF) is brought up to more than 0.95.Owing to there is not oscillation source in chip, so the problem of Electro Magnetic Compatibility and electromagnetic interference will be unusual easy to handle.
The present invention is used for replacing the LED lamp of compact fluorescent lamp, its LED light emitting diode and drive circuit are assembled on the pcb board, once finish during paster, compact conformation, easy to assembly, not only having high power factor, low harmonic wave, long-life, low cost, highly reliable, good characteristics such as Electromagnetic Compatibility, and can satisfy the requirement of countries in the world to the security of LED lamp, is a kind of LED fluorescent tube that can replace electricity-saving lamp (CFL).
The above; it only is preferred embodiment of the present invention; be not that the present invention is done any pro forma restriction, those skilled in the art utilize the technology contents of above-mentioned announcement to make a little simple modification, equivalent variations or modification, all drop in protection scope of the present invention.