CN102207255A - LED lamp for replacing compact fluorescent lamp - Google Patents

LED lamp for replacing compact fluorescent lamp Download PDF

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Publication number
CN102207255A
CN102207255A CN2011101669762A CN201110166976A CN102207255A CN 102207255 A CN102207255 A CN 102207255A CN 2011101669762 A CN2011101669762 A CN 2011101669762A CN 201110166976 A CN201110166976 A CN 201110166976A CN 102207255 A CN102207255 A CN 102207255A
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China
Prior art keywords
compact fluorescent
voltage
fluorescent lamp
led
led lamp
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Pending
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CN2011101669762A
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Chinese (zh)
Inventor
张高柏
陈卫平
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Shanghai Lead Esco Co Ltd
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Individual
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

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Abstract

The invention relates to a light-emitting diode (LED) lamp for replacing a compact fluorescent lamp, which mainly comprises a printed circuit board (PCB) and an alternating-current driving chip and a plurality of LED light-emitting diodes which are arranged on the same PCB board, wherein the LED light-emitting diodes are electrically connected with the alternating-current driving chip. The LED lamp for replacing the compact fluorescent lamp has long integral service life and is suitable to be used in centralized large areas, so the defect of the conventional LED lamp is overcome.

Description

A kind of LED lamp that is used for replacing compact fluorescent lamp
Technical field
The present invention relates to a kind of LED lamp in lighting field field, particularly relate to a kind of LED lamp that is used for replacing compact fluorescent lamp.
Background technology
Current LED lamp has been widely used in every field, has long, characteristics such as light efficiency is high, radiationless, low-power consumption of life-span.But general LED fluorescent tube (bulb) owing to the passive devices that use in the drive circuit more, particularly must use short electrochemical capacitor (life-span has only thousands of hours) of life-span in the hot environment, so that the life-span of drive circuit is significantly less than the service life of LED, thereby has limited the bulk life time of LED lighting apparatus.In addition, low power LED fluorescent tube (bulb), low, the humorous wave height of power factor is not suitable for concentrating large tracts of land to use, and therefore can't substitute existing compact fluorescent lamp, and the scope of application also is subjected to certain restriction.
This shows that above-mentioned existing LED lamp obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.It is longer how to found a kind of whole service life, and new being used for that is suitable for concentrating large tracts of land to use replaces the LED lamp of compact fluorescent lamp, one of real important improvement target that belongs to current this area.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of LED lamp that is used for replacing compact fluorescent lamp, makes its whole service life longer, and is suitable for concentrating large tracts of land to use, thereby overcomes the deficiency of existing LED lamp.
For solving the problems of the technologies described above, a kind of LED lamp that is used for replacing compact fluorescent lamp of the present invention, the interchange that mainly comprises pcb board and be installed on the same pcb board drives chip and a plurality of LED light emitting diode, and wherein, the LED light emitting diode drives chip drives by exchanging.
As a kind of improvement of the present invention, described pcb board is fixed on the lamp adapter assembly, and is fixed with radiator at the back side of pcb board.
The front of described pcb board and end also are fixed with trim.
Described interchange drives chip and comprises voltage input module, voltage distribution module and many group buffering-voltage comparison module and semiconductor field effect transistor MOSFET, wherein: the source electrode of first MOSFET is connected with earth potential, grid is directly connected in an input of this group buffering-voltage comparison module, is connected in the output of voltage input module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip; The source electrode of other MOSFET is by can equivalence being that the element group of resistance is connected with earth potential, grid is connected in an input of this group buffering-voltage comparison module, is connected in the output of preceding pool of buffer-voltage comparison module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip; Another input of above-mentioned buffering-voltage comparison module is connected with the voltage distribution module; The output of voltage input module also is connected with the initiating terminal on LED light emitting diode series line road, and is connected in earth potential by the voltage distribution module.
Described voltage input module is a semiconductor field effect transistor, and its grid is connected with the external voltage input, and drain electrode is through can equivalence being connected in earth potential for the element group of resistance, and source electrode is the output of voltage input module.
Described interchange drives chip and also comprises circuit of power factor correction, this circuit of power factor correction is a triode, its colelctor electrode is connected with the grid of voltage input module and is connected with the external voltage input by inductance by the diode that a forward connects, and emitter stage is connected with earth potential by the diode that oppositely connects.
Described semiconductor field effect transistor MOSFET is V-type groove field-effect transistor VMOS.
Described voltage input module is enhancement mode metal-oxide layer-semiconductor field effect transistor.
Described interchange drives chip and also is connected with rectification circuit, EMC circuit and surge absorbing circuit.
Described EMC circuit mainly comprises the inductance L that is positioned on the main line, and the capacitor C in parallel with rectification circuit.
After adopting such design, the present invention has the following advantages at least:
1, drive circuit (comprising EMC and surge absorbing circuit) and whole LED light emitting diode all are installed on the PCB, and one time paster is finished, and has simplified production technology and assembly technology greatly, and has improved reliability of products;
2, owing to do not need Standalone Drives, thus the whole LED fluorescent tube, profile is small and exquisite, and diameter and length are all similar with the 15W electricity-saving lamp, can directly replace in horizontal slotting Down lamp.
Description of drawings
Above-mentioned only is the general introduction of technical solution of the present invention, and for can clearer understanding technological means of the present invention, the present invention is described in further detail below in conjunction with accompanying drawing and the specific embodiment.
Fig. 1 is a kind of decomposition texture schematic diagram that is used for replacing the LED lamp of compact fluorescent lamp of the present invention.
Fig. 2 is a kind of circuit connection diagram that is used for replacing the LED lamp of compact fluorescent lamp of the present invention.
Fig. 3 is the circuit connection diagram that a kind of interchange that is used for replacing the LED lamp of compact fluorescent lamp of the present invention drives chip.
The specific embodiment
See also shown in Figure 1, the present invention is used for replacing the LED lamp of compact fluorescent lamp, mainly comprise pcb board 1, and the interchange that is installed on the same pcb board 1 drives chip 2, with a plurality of LED light emitting diodes 3, in addition, pcb board 1 can be fixed on the lamp adapter assembly 4, and be fixed with radiator 5 at the back side of pcb board 1, at the front and the end fixing trim cover 6 of pcb board 1.
Please cooperate and consult shown in Figure 2ly, the LED light emitting diode is by exchange driving chip drives, exchanges to drive chip and also be connected with rectification circuit, EMC (Electro Magnetic Compatibility, Electro Magnetic Compatibility) circuit and surge absorbing circuit etc.Wherein, the EMC circuit mainly comprises the inductance L that is positioned on the main line, and the capacitor C in parallel with rectification circuit.
Please cooperate and consult shown in Figure 3ly, interchange used in the present invention drives chip and mainly comprises voltage input module, voltage distribution module and many group buffering-voltage comparison module 21 and semiconductor field effect transistor MOSFET Q1-Qn.
Wherein, semiconductor field effect transistor MOSFET Q1-Qn can adopt V-type groove field-effect transistor VMOS.The source electrode of MOSFET Q1 links to each other with earth potential, grid is directly connected in an input of first group of buffering-voltage comparison module, is connected in the output of voltage input module simultaneously, another input of first group of buffering-voltage comparison module is connected to the tie point place between series resistance R1 and the R2 respectively, first group of buffering-voltage comparison module output links to each other with the grid of MOSFET Q2, and the drain electrode of MOSFET Q1 is connected on the series circuit of external LED light emitting diode as the output of drive unit.
The source electrode of MOSFET Qn (n>1) is by resistance or can equivalence be that the element group of resistance links to each other with earth potential, grid is connected in an input of n group buffering-voltage comparison module, is connected in the output of preceding pool of buffer-voltage comparison module simultaneously, another input of n group buffering-voltage comparison module is connected to the tie point place between series resistance R2n-1 and the R2n, and the drain electrode of MOSFET Qn is connected on the series circuit of external LED light emitting diode as the output of drive unit.
The voltage distribution module is promptly by above-mentioned R1 and R2, and the n bar branch road that R2n-1 and R2n form composes in parallel.
The voltage input module can adopt enhancement mode metal-oxide layer-semiconductor field effect transistor MOSFET Q0, and its output is connected with the initiating terminal of the series circuit of LED light emitting diode, and is connected in earth potential by the voltage distribution module.
In addition, exchange the driving chip and also comprise circuit of power factor correction, this circuit of power factor correction is triode Qi, its colelctor electrode is connected with the grid of voltage input module Q0 and is connected with external voltage input VIN by inductance L by the diode D1 that a forward connects, and emitter stage is connected with earth potential by the diode D2 that oppositely connects.
The grid of voltage input module Q0 is connected with external voltage input VIN, and the drain electrode of Q0 is connected in earth potential through a resistance R x, the source electrode of Q0 be the voltage input module output, be connected in earth potential through the voltage distribution module.The LED assembly that drives among the figure is 6 LED lamp sections, and every section LED is made up of two LED lamps, and wherein each LED lamp forms by the series connection of 6 LED light emitting diodes, and the pressure drop of each LED is 3V, so both end voltage is 3 * 12=36V during each LED lamp Duan Quanliang.
When line voltage distribution from VIN when input end, the grid voltage of the Q0 that links to each other with the VIN port is in high potential, Q0 begins conducting, the output voltage of the source electrode of Q0 is that VDD rises thereupon; Then the grid voltage of transistor MOSFET Q1 rises, and Q1 just begins conducting, and LED1, LED2 begin to light luminous; The input 1A of first group of buffering-voltage comparison module is a high potential simultaneously; If the voltage of voltage input end VIN is lower, the input 1B of first group of buffering-voltage comparison module is an electronegative potential, first group of buffering-voltage comparison module output electronegative potential, and the grid of Q2 is in earth potential, and Q2 is in cut-off state.By that analogy, Q3-Q6 also is in cut-off state.
Along with VIN end input voltage increases, Q1 begins to enter the voltage that saturation state and resistance R 1 share and increases, the 1B end-point voltage raises gradually and reaches the forward threshold voltage of Schmidt trigger, Schmidt trigger is triggered, second group of buffering-voltage comparison module output high potential, Q2 conducting this moment, LED3, LED4 begin to light luminous when input voltage surpasses 36V.This moment predefined R3 and R4 the ratio of resistance value, still can make second group of voltage at end points 2B place be lower than the forward threshold voltage of the interior Schmidt trigger of buffering-voltage comparison module, Q3-Q6 still is in cut-off state.
Continuation increase along with VIN end input voltage, Q2 begins to enter the forward threshold voltage that voltage that saturation state and resistance R 3 share increases to Schmidt trigger in second group of buffering-voltage comparison module, Schmidt trigger is triggered, the Q3 conducting, LED5, LED6 begin to light luminous when input voltage surpasses 72V, and Q4-Q6 ends.
By that analogy, along with input voltage raises gradually, when input voltage value surpasses 180V, the Q6 conducting, LED11 and LED12 light; When input voltage value surpassed 216V, this moment, Q6 entered saturation state, and the whole LED lighting device reaches the brightest.
By above type of drive as can be known, interchange of the present invention drives chip, just can realize light modulation as long as change line voltage distribution, and when large tracts of land was used, the present invention had more promotional value than existing electricity-saving lamp.Therefore, can use common controllable silicon dimmer easily and be implemented.Drive 72 LED light emitting diodes in the example altogether, calculate with every crystal grain 0.065W, 0.065 * 72=4.68W can form the most frequently used home lighting light fixture.The lighting of forming different capacity if desired only needs to change RX, is easy to just can form the different types of LED light fixture of 1W-7W.
Wherein the operation principle of inductance L is: the LED light emitting semiconductor device itself is a kind of diode, and lighting LED can be direct current, also can be unidirectional pulsating direct current.When external power source is alternating current, avoid also can using alternating current under the prerequisite of alternating current backward voltage with the luminescent device punch through damage in attention.LED is lighted in the 100Hz pulsating direct current of using full-wave rectification bridge to produce, utilizes " pulsation " this characteristic, in input circuit, seals in an inductance L.Utilize electric current to flow through the hysteresis characteristic of inductance, easily power factor (PF) is brought up to more than 0.95.Owing to there is not oscillation source in chip, so the problem of Electro Magnetic Compatibility and electromagnetic interference will be unusual easy to handle.
The present invention is used for replacing the LED lamp of compact fluorescent lamp, its LED light emitting diode and drive circuit are assembled on the pcb board, once finish during paster, compact conformation, easy to assembly, not only having high power factor, low harmonic wave, long-life, low cost, highly reliable, good characteristics such as Electromagnetic Compatibility, and can satisfy the requirement of countries in the world to the security of LED lamp, is a kind of LED fluorescent tube that can replace electricity-saving lamp (CFL).
The above; it only is preferred embodiment of the present invention; be not that the present invention is done any pro forma restriction, those skilled in the art utilize the technology contents of above-mentioned announcement to make a little simple modification, equivalent variations or modification, all drop in protection scope of the present invention.

Claims (10)

1. LED lamp that is used for replacing compact fluorescent lamp is characterized in that mainly comprising pcb board and the interchange that is installed on the same pcb board drives chip and a plurality of LED light emitting diode, and wherein, the LED light emitting diode drives chip drives by exchanging.
2. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 1 is characterized in that described pcb board is fixed on the lamp adapter assembly, and is fixed with radiator at the back side of pcb board.
3. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 1 is characterized in that the front of described pcb board and end also are fixed with trim.
4. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 1, it is characterized in that described interchange drives chip and comprises voltage input module, voltage distribution module and many group buffering-voltage comparison module and semiconductor field effect transistor MOSFET, wherein:
The source electrode of first MOSFET is connected with earth potential, grid is directly connected in an input of this group buffering-voltage comparison module, is connected in the output of voltage input module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip;
The source electrode of other MOSFET is by can equivalence being that the element group of resistance is connected with earth potential, grid is connected in an input of this group buffering-voltage comparison module, is connected in the output of preceding pool of buffer-voltage comparison module simultaneously, and drain electrode is connected on the series circuit of LED light emitting diode as the output that drives chip;
Another input of above-mentioned buffering-voltage comparison module is connected with the voltage distribution module;
The output of voltage input module also is connected with the initiating terminal on LED light emitting diode series line road, and is connected in earth potential by the voltage distribution module.
5. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 4, it is characterized in that described voltage input module is a semiconductor field effect transistor, its grid is connected with the external voltage input, drain electrode is through can equivalence being connected in earth potential for the element group of resistance, and source electrode is the output of voltage input module.
6. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 5, it is characterized in that described interchange drives chip and also comprises circuit of power factor correction, this circuit of power factor correction is a triode, its colelctor electrode is connected with the grid of voltage input module and is connected with the external voltage input by inductance by the diode that a forward connects, and emitter stage is connected with earth potential by the diode that oppositely connects.
7. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 4 is characterized in that described semiconductor field effect transistor MOSFET is V-type groove field-effect transistor VMOS.
8. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 4 is characterized in that described voltage input module is enhancement mode metal-oxide layer-semiconductor field effect transistor.
9. according to each described a kind of LED lamp that is used for replacing compact fluorescent lamp among the claim 1-8, it is characterized in that described interchange drives chip and also is connected with rectification circuit, EMC circuit and surge absorbing circuit.
10. a kind of LED lamp that is used for replacing compact fluorescent lamp according to claim 9 is characterized in that described EMC circuit mainly comprises the inductance L that is positioned on the main line, and the capacitor C in parallel with rectification circuit.
CN2011101669762A 2011-06-21 2011-06-21 LED lamp for replacing compact fluorescent lamp Pending CN102207255A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102352997A (en) * 2011-10-27 2012-02-15 贵州光浦森光电有限公司 LED lamp bulb with radiator and method for forming lighting lamp based on same
AU2012101534B4 (en) * 2012-10-10 2013-07-04 Mort Bay Traders Pty Ltd A compact luminaire
CN103438404A (en) * 2013-08-30 2013-12-11 温州沃斯托科技有限公司 Ultra-thin integrated LED lamp panel

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CN101761838A (en) * 2010-02-10 2010-06-30 海南世银能源科技有限公司 LED (light emitting diode) light-mixing efficient energy-saving street lamp
CN101841959A (en) * 2010-05-06 2010-09-22 宁波市鄞州龙源照明电器有限公司 Drive circuit for load current of high-power controllable LED
CN201700047U (en) * 2010-04-02 2011-01-05 上海古森实业有限公司 Led lamp driving circuit
CN201742622U (en) * 2010-08-12 2011-02-09 无锡科尔华电子有限公司 Constant-current control power supply for LED (light-emitting diode) street lamp
CN201753855U (en) * 2010-08-12 2011-03-02 张荣民 AC LED light tube
CN102011949A (en) * 2009-09-07 2011-04-13 铼阔光电(上海)有限公司 Direct-connected LED (Light-Emitting Diode) lighting tube
CN102098849A (en) * 2011-01-27 2011-06-15 陈卫平 Light-emitting diode (LED) driving chip
CN202118622U (en) * 2011-06-21 2012-01-18 陈卫平 Light-emitting diode (LED) lamp for replacing compact fluorescent lamp

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201265817Y (en) * 2008-09-10 2009-07-01 厦门日辉科技有限公司 Universal high-brightness LED energy-saving lamp
CN102011949A (en) * 2009-09-07 2011-04-13 铼阔光电(上海)有限公司 Direct-connected LED (Light-Emitting Diode) lighting tube
CN101761838A (en) * 2010-02-10 2010-06-30 海南世银能源科技有限公司 LED (light emitting diode) light-mixing efficient energy-saving street lamp
CN201700047U (en) * 2010-04-02 2011-01-05 上海古森实业有限公司 Led lamp driving circuit
CN101841959A (en) * 2010-05-06 2010-09-22 宁波市鄞州龙源照明电器有限公司 Drive circuit for load current of high-power controllable LED
CN201742622U (en) * 2010-08-12 2011-02-09 无锡科尔华电子有限公司 Constant-current control power supply for LED (light-emitting diode) street lamp
CN201753855U (en) * 2010-08-12 2011-03-02 张荣民 AC LED light tube
CN102098849A (en) * 2011-01-27 2011-06-15 陈卫平 Light-emitting diode (LED) driving chip
CN202118622U (en) * 2011-06-21 2012-01-18 陈卫平 Light-emitting diode (LED) lamp for replacing compact fluorescent lamp

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102352997A (en) * 2011-10-27 2012-02-15 贵州光浦森光电有限公司 LED lamp bulb with radiator and method for forming lighting lamp based on same
CN102352997B (en) * 2011-10-27 2014-08-13 贵州光浦森光电有限公司 LED lamp bulb with radiator and method for forming lighting lamp based on same
AU2012101534B4 (en) * 2012-10-10 2013-07-04 Mort Bay Traders Pty Ltd A compact luminaire
CN103438404A (en) * 2013-08-30 2013-12-11 温州沃斯托科技有限公司 Ultra-thin integrated LED lamp panel
CN103438404B (en) * 2013-08-30 2016-06-08 温州沃斯托科技有限公司 Ultra-thin type integral LED lamp plate

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