CN102194904A - Thin film solar structure and manufacturing method thereof - Google Patents
Thin film solar structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN102194904A CN102194904A CN201010143295XA CN201010143295A CN102194904A CN 102194904 A CN102194904 A CN 102194904A CN 201010143295X A CN201010143295X A CN 201010143295XA CN 201010143295 A CN201010143295 A CN 201010143295A CN 102194904 A CN102194904 A CN 102194904A
- Authority
- CN
- China
- Prior art keywords
- groove
- film solar
- assemblies
- active layers
- battery structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a thin film solar battery structure and a manufacturing method thereof. An effective area of a solar panel is defined by a laser abrasion method and a mechanical abrasion method during manufacturing, so that an aim of enlarging the effective area of the solar panel can be fulfilled by a non-aligning mode.
Description
Technical field
The present invention relates to a kind of solar battery structure and manufacture method thereof, particularly relate to structure and manufacture method thereof that a kind of tool increases the solar panel effective coverage.
Background technology
Solar cell is the photovoltaic device that luminous energy directly is transformed into electric energy.Modal solar cell material is a silicon, and it is the form of list or polycrystallinity wafer.Yet, be the more traditional power cost height that method produced of the power cost that solar cell produced ratio of ground with silicon.Therefore, promptly be devoted to reduce in early days the cost of solar cell in 1970.Reduce a kind of mode of solar cell cost and can on large area substrates, make solar cell by the low-cost film growth techniques and the use high-throughput cost effective method of depositing solar cell quality absorbing material for exploitation.
(yellow copper structure, Chalcopyrites) semiconductor is the good absorbing material that is used for film solar battery structure to comprise the IBIIIAVIA compounds of group of periodic table IB family (copper, silver, gold), IIIA family (boron, aluminium, gallium, indium, thallium) and VIA family (oxygen, sulphur, selenium, tellurium, polonium) material or element.Particularly, ClGS or Cu (In, and Ga) (S, Se)
2Or CuIn
1-xGa
x(SySe
1-y)
k, wherein 0≤x≤1,0≤y≤1 and k are about 2, the compound of copper, indium, gallium, selenium and sulphur be used to already produce in the solar battery structure of about 20% conversion efficiency.The absorber that contains IIIA family element aluminum and/or VIA family elemental tellurium also demonstrates its possibility.Therefore, the application of thin-film solar cells is interesting greatly for the compound that contains following column element: the copper of (1) IB family, indium, gallium and the aluminium of (2) IIIA family at least one of them, and sulphur, selenium and the tellurium of (3) VIA family at least one of them.
For example Cu (In, Ga, Al) (S, Se, Te)
2The structure of the conventional I BIIIAVIA compounds of group photovoltaic cellphotocell of thin-film solar cells etc. is shown among Fig. 1.This battery structure 10 is for example to be manufactured on glass (Glass) or to have on the base material 10 of flexual metal forming (as stainless steel foil, Copper Foil, alloy foil) or some macromolecules such as Polyimide (PI) etc.To be included in Cu (In, Ga, Al) (S, Se, Te)
2The light absorbing zone 14 of the material in the group is long on conductive layer 12, and conductive layer 12 is deposited on the base material 10 in advance and is connected to the electric contact of this battery structure 10.Conductive layer 12 comprises different conductive layers such as molybdenum, tantalum, tungsten, titanium, copper, aluminium and stainless steel and has been used in the film solar battery structure of Fig. 1.If base material 10 is own through suitably selecting electric conducting material, impossible use conductive layer 12 is because this base material 10 can be followed as the nurse contact difficult to understand that is connected to this device.After light absorbing zone 14 growths, on light absorbing zone 14, form for example hyaline layer 16 of CdS, ZnO or CdS/ZnO storehouse thing etc.Radiation enters battery structure 10 via hyaline layer 16.The preferable electric type that light absorbing zone 14 contains the semiconductor layer of p-n junction structure is the p-type, and the preferable electric type of hyaline layer 16 is the n-type.Yet, also can utilize n-type light absorbing zone 14 and p-type hyaline layer 16.Yet, in manufacture process, forbidden to cause short circuit because of contraposition; About the size of components size of two sides because of hyaline layer 14 contraposition factor affecting, variant with other normal assembly, it is electrical and influence; And the size of solar panel active zone is because of being subject to each board ability, and often the shadow effect (shadow effect) that produces because of the inaccurate relation of contraposition is by limit 4mm～8mm.
Summary of the invention
For solving the contraposition problem of foregoing invention background, the present invention proposes a kind of film solar battery structure and manufacture method thereof, avoid inaccurate because of contraposition, causing influences solar cell integrated conversion efficiency to the reduction of solar cell portions subassembly (Device) conversion efficiency.
Purpose of the present invention is for providing a kind of film solar battery structure that does not have the contraposition problem.
Another object of the present invention is for providing a kind of manufacture method that makes the big thin-film solar cells of active zone change.
According to above-mentioned purpose, the present invention discloses a kind of film solar battery structure and manufacture method thereof.At first, provide base material, on base material, form conductive layer.Then, remove the conductive layer of part, form first groove in vertical component serial connection direction, and form second groove, so that the plurality of films solar module is isolated in the parallel series direction.Next on conductive layer, form to compliance active layers.Then, remove the active layers of part, form the 3rd groove in the serial connection direction of vertical component, as the contact hole that is connected with conductive layer.On active layers, form to compliance transparency conducting layer afterwards.And then, remove the transparency conducting layer of part and the active layers of part, form the 4th groove and the 6th groove in the serial connection direction of vertical component.At last, remove the transparency conducting layer of part and the active layers of part, form the 5th groove and the 7th groove in the serial connection direction of parallel assembly, to define maximum effective coverage.
Embodiment
Being described in detail as follows of some embodiments of the invention, however except this was described in detail, the present invention can also be widely implements at other embodiment.That is scope of the present invention is not subjected to the restriction of the embodiment that proposed, and should be as the criterion with the claim that the present invention proposes.
Moreover for clearer description being provided and being more readily understood the present invention, each several part is not drawn according to its relative size in the diagram, and some size is compared with other scale dependent and exaggerated; Incoherent detail section is not drawn fully yet, in the hope of illustrated succinct.
Film solar battery structure of the present invention as shown in Figure 2, bottom is a base material (Substrate) 20, normally used material is glass (Glass) or has flexual metal forming (as stainless steel foil, Copper Foil, alloy foil) or some macromolecules such as Polyimide (PI), and the conductive layer 22 of about 0.5～1.0 μ m of meeting sputter one deck on the base material 20, normally used material is a molybdenum, tantalum, tungsten, titanium, copper, aluminium, stainless steel or electrically conducting transparent material etc., be beneficial to hole-conductive, it up is general so-called active layers (ActiveLayer) 24, it can be a light absorbing zone 24, be included in Cu (In, Ga, Al) (S, Se, Te)
2Material in the group, this layer is about 1.5～2.0 μ m.Up be thick n-type (n-type) semiconductor buffer layer (the buffer layer of about 0.05 μ m again, not shown in the figures), the material of resilient coating is cadmium sulfide (CdS), indium sulfide (InS), indium selenide (InSe), zinc sulphide (ZnS) or magnesium oxide zinc (ZnMgO), it can help electronics effectively to conduct, and this resilient coating is not an imperative.Thick n-type (n-type) pure zinc oxide (i-ZnO) the layer (not shown) of the about 0.1 μ m of one deck up arranged again, it can prevent that thin-film solar cells is in carrying out power generation process, because of causing components performance, the problem of shunting (Shunting) descends the also non-imperative of this pure zinc oxide layer.This moment is transparency conducting layer 26 on the sputter again, transparency conducting layer 26 is the printing opacity conductive oxide layer (Transparent Conductive Oxide) of poly-printing opacity conducting function, the material that electrically conducting transparent is 26 layers is nickel oxide/gold (NiO/Au), tin indium oxide (Indium Tin Oxide, ITO), zinc oxide (ZnO) or aluminum zinc oxide (Aluminum Zinc Oxide, AlZnO), transparency conducting layer 26 is except as the top electrode, need allow sunlight smoothly by this layer arrival active layers 24, promptly constitute a Copper Indium Gallium Selenide (CIGS) thin-film solar cells.
The coating technique of light absorbing zone 24 has quite multiple at present, mainly can be divided into common evaporation (Co-evaporation), sputter (Sputtering) selenizing (Selenization) equal vacuum process technique, and coating process (Coating Process), chemistry spray pyrolysismethod (Chemical spray Pyrolysis), electro-deposition antivacuum process technique such as (Electrodeposition).
Fig. 3 A to Fig. 3 C is the sectional view that shows the film solar battery structure of the embodiment of the invention.At first, as shown in Figure 3A, provide base material 20, the material of base material 20 can for example be a glass in the present embodiment.On base material 20, form conductive layer 22.Then, utilize laser to scrape division (Laser Scribing) processing procedure, remove the conductive layer 22 of part, form first groove 21 in vertical component serial connection direction, and form second groove 21 ' in the parallel series direction, strike off, so that the plurality of films solar module is isolated to base material 20.Next, shown in 3B figure, compliance ground forms active layers 24 on conductive layer 22.Then utilize mechanical curettage method (Mechanical Scraping) processing procedure, remove the active layers 24 of part, form the 3rd groove 23, strike off to conductive layer 22, as the contact hole that is connected with conductive layer 22 in the serial connection direction of vertical component.Afterwards, shown in Fig. 3 C, compliance ground forms transparency conducting layer 26 on active layers 24.And then utilize mechanical curettage method processing procedure, remove this transparency conducting layer 26 of part and this active layers 24 of part, strike off, form the 4th groove 25 and the 6th groove 27 in the serial connection direction of vertical component to conductive layer 22.At last, utilize mechanical curettage method processing procedure, remove this transparency conducting layer 26 of part and this active layers 24 of part, strike off to conductive layer 22, serial connection direction at parallel assembly forms the 5th groove 25 ' and the 7th groove 27 ', can accurately define the effective coverage of integral panels, so can avoid the shadow effect that is produced because of the contraposition problem.Owing to clearly define the effective coverage of whole solar panel, the effective coverage that the influence of removal shadow effect can increase whole solar panel.
The present invention with the preferred embodiment explanation as above; only be used for helping to understand enforcement of the present invention; non-in order to limit spirit of the present invention; and be familiar with this field skill person after comprehension spirit of the present invention; in not breaking away from spiritual scope of the present invention; when the variation that can do a little change retouching and be equal to is replaced, its scope of patent protection when on accompanying Claim and etc. same domain decide.
Description of drawings
Fig. 1 shows conventional films solar battery structure schematic diagram;
Fig. 2 shows film solar battery structure schematic diagram of the present invention;
Fig. 3 A shows the sectional view of the film solar battery structure of the embodiment of the invention;
Fig. 3 B shows the sectional view of the film solar battery structure of the embodiment of the invention; And
Fig. 3 C shows the sectional view of the film solar battery structure of the embodiment of the invention.
The primary clustering symbol description
10: base material
12: conductive layer
14: light absorbing zone
16: hyaline layer
20: base material
21: the first grooves
21 ': the second groove
22: conductive layer
23: the three groove multiple layer metal films
24: active layers
25: the four grooves
The 25 ': the 5th groove
26: transparency conducting layer
27: the six grooves
The 27 ': the 7th groove
Claims (10)
1. film solar battery structure, it comprises:
Base material;
Conductive layer is formed at and has a plurality of first grooves and a plurality of second groove on this base material, wherein said first groove and these assemblies to be connected in series direction vertical, described second groove is parallel with this serial connection direction of these assemblies;
Active layers, be formed to compliance on this conductive layer, have a plurality of the 3rd grooves, a plurality of the 4th groove and a plurality of the 5th groove, it is vertical that this of wherein said the 3rd groove and described the 4th groove and these assemblies is connected in series direction, and described the 5th groove is parallel with this serial connection direction of these assemblies; And
Transparency conducting layer, be formed to compliance on this active layers, have a plurality of the 6th grooves and a plurality of the 7th groove, wherein said the 6th groove corresponds to described the 4th groove, it is vertical that this of described the 6th groove and these assemblies is connected in series direction, described the 7th groove corresponds to described the 5th groove, and described the 7th groove is parallel with this serial connection direction of these assemblies.
2. film solar battery structure according to claim 1, wherein said base material is glass, have flexual metal forming or macromolecular material, wherein said to have flexual metal forming be stainless steel foil, Copper Foil or alloy foil, and described macromolecular material is a pi.
3. film solar battery structure according to claim 1, wherein said conductive layer are selected from one of molybdenum, tantalum, tungsten, titanium, copper, aluminium etc. and stainless steel.
4. film solar battery structure according to claim 1, wherein said active layers are light absorbing zone.
5. film solar battery structure according to claim 4, wherein said light absorbing zone be selected from I BIIIAVIA family compound (yellow copper structure, one of Chalcopyrites).
6. film solar battery structure according to claim 5, wherein said IB family material is a copper, described IIIA family material be selected from indium and gallium one of them, described IIIA family material comprises indium and gallium, described VIA family material be selected from selenium and sulphur one of them, described VIA family material comprises selenium and sulphur, described VIA family material be selected from selenium and sulphur one of them, described VIA family material comprises selenium and sulphur.
7. film solar battery structure according to claim 1, wherein said transparency conducting layer is the printing opacity conductive oxide layer (TCO) of poly-printing opacity conducting function, and the material of this transparency conducting layer is nickel oxide/gold (NiO/Au), tin indium oxide (ITO), zinc oxide (ZnO) or aluminum zinc oxide (AlZnO).
8. film solar battery structure according to claim 4, it also comprises resilient coating, and wherein the material of this resilient coating is cadmium sulfide (CdS), indium sulfide (InS), indium selenide (InSe), zinc sulphide (ZnS) or magnesium oxide zinc (ZnMgO).
9. the manufacture method of a thin-film solar cells, the method comprising the steps of:
Base material is provided;
On this base material, form conductive layer;
Remove the described conductive layer of part, forming a plurality of first grooves and a plurality of second groove, wherein said first groove and these assemblies to be connected in series direction vertical, described second groove is parallel with this serial connection direction of these assemblies;
Compliance ground forms active layers on this conductive layer;
Remove this active layers of part, forming a plurality of the 3rd grooves, it is vertical that this of described the 3rd groove and these assemblies is connected in series direction;
Compliance ground forms transparency conducting layer on this active layers;
Remove the described transparency conducting layer of part and the described active layers of part, to form a plurality of the 4th grooves and a plurality of the 6th groove, wherein said the 6th groove corresponds to described the 4th groove, and it is vertical that this of described the 4th groove and described the 6th groove and these assemblies is connected in series direction; And
Remove the described transparency conducting layer of part and the described active layers of part, to form a plurality of the 5th grooves and a plurality of the 7th groove, wherein said the 7th groove corresponds to described the 5th groove, and described the 5th groove and described the 7th groove are parallel with this serial connection direction of these assemblies.
10. method according to claim 9, wherein said conduction series of strata form with sputtering method, described first groove and described second groove strike off mode with laser and form, described the 3rd groove, the 4th groove, the 5th groove, the 6th groove and the 7th groove form in the mechanical curettage mode, described active layers forms to be total to evaporation, sputter selenizing, coating process, chemistry sprinkling pyrolysismethod or electro-deposition mode, and described transparency conducting layer forms with sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010143295XA CN102194904A (en) | 2010-03-17 | 2010-03-17 | Thin film solar structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010143295XA CN102194904A (en) | 2010-03-17 | 2010-03-17 | Thin film solar structure and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102194904A true CN102194904A (en) | 2011-09-21 |
Family
ID=44602658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010143295XA Pending CN102194904A (en) | 2010-03-17 | 2010-03-17 | Thin film solar structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102194904A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847365A (en) * | 2016-12-25 | 2017-06-13 | 董晓 | A kind of preparation method of the modified zinc sulphide conductive material of tin indium oxide |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101258610A (en) * | 2005-07-22 | 2008-09-03 | 本田技研工业株式会社 | Chalcopyrite-type solar cell |
-
2010
- 2010-03-17 CN CN201010143295XA patent/CN102194904A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101258610A (en) * | 2005-07-22 | 2008-09-03 | 本田技研工业株式会社 | Chalcopyrite-type solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847365A (en) * | 2016-12-25 | 2017-06-13 | 董晓 | A kind of preparation method of the modified zinc sulphide conductive material of tin indium oxide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103107216B (en) | Utilize the method forming thin-film solar cells without buffer manufacturing process | |
| JP2013506991A (en) | Photovoltaic power generation apparatus and manufacturing method thereof | |
| CN103515454A (en) | Thin film solar cell module and method of manufacturing the same | |
| US10134932B2 (en) | Solar cell and method of fabricating the same | |
| US8476100B2 (en) | Method of forming thin film solar cell and structure thereof | |
| KR101428146B1 (en) | Solar cell module and method of fabricating the same | |
| KR101241467B1 (en) | Solar cell and preparing method of the same | |
| KR101382898B1 (en) | See through type solar cell and fabricating method | |
| CN102598303B (en) | Solar cell and manufacture method thereof | |
| JP5602234B2 (en) | Photovoltaic power generation apparatus and manufacturing method thereof | |
| KR101173419B1 (en) | Solar cell and method of fabricating the same | |
| KR20150039040A (en) | Solar cell and method of fabricating the same | |
| CN102194904A (en) | Thin film solar structure and manufacturing method thereof | |
| KR101306525B1 (en) | Solar cell module and method of fabricating the same | |
| KR101417213B1 (en) | Solar cell module and preparing method of the same | |
| KR101405639B1 (en) | Solar cell and method of fabricating the same | |
| KR20150039536A (en) | Solar cell | |
| KR20150039535A (en) | Solar cell and method of fabricating the same | |
| KR101393743B1 (en) | Solar cell and method of fabricating the same | |
| KR20150094944A (en) | CIGS solar cells with a graphene back contact and the manufacturing method thereof | |
| KR101765922B1 (en) | Solar cell apparatus and method of fabricating the same | |
| KR101327102B1 (en) | Solar cell and method of fabricating the same | |
| KR101382819B1 (en) | Photovoltaic apparatus and method of fabricating the same | |
| KR101210104B1 (en) | Solar cell apparatus | |
| EP2876692A1 (en) | Solar cell and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110921 |