CN102194577B - Solar cell and method for making same - Google Patents
Solar cell and method for making same Download PDFInfo
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- CN102194577B CN102194577B CN 201110056427 CN201110056427A CN102194577B CN 102194577 B CN102194577 B CN 102194577B CN 201110056427 CN201110056427 CN 201110056427 CN 201110056427 A CN201110056427 A CN 201110056427A CN 102194577 B CN102194577 B CN 102194577B
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Abstract
The invention discloses a solar cell, which comprises a cathode assembly, an anode assembly, a sealant and an electrolyte, wherein the sealant is used for assembling the cathode assembly and the anode assembly together to form a closed space; the electrolyte is accommodated in the closed space; the cathode assembly comprises a lower transparent conducting substrate, a nano-oxide semiconductor thin film formed on the lower transparent conducting substrate and dye stuff attached onto the surfaces of nano particles in the nano-oxide semiconductor thin film; the anode assembly comprises an upper transparent conducting substrate, an anode layer formed on the upper transparent conducting substrate and a patterning CdTe layer with an opening; the nano-oxide semiconductor thin film and the anode layer are arranged oppositely and are contacted with the electrolyte; and the anode layer is arranged in the opening of the CdTe layer. The solar cell disclosed by the invention is high in photoelectric conversion efficiency.
Description
Technical field
The present invention relates to solar cell and manufacture method thereof, more specifically, relate to DSSC (DSSC) and manufacture method thereof.
Background technology
French scientist Henri Becq μ erel is in first observed in 1839 to the photoelectric conversion phenomenon, but but until the appearance of the semiconductor solar cell of first practicality in 1954, the idea of " solar energy is changed into electric energy " just really becomes a reality.In the initial development stage of solar cell, employed material generally is the narrow bandgap semiconductor material that certain absorption is arranged in the visual field, and therefore this solar cell is called again semiconductor solar cell.
Although wide band gap semiconducter itself is caught the non-constant of the ability of sunlight, suitable dyestuff is attached on the semiconductor surface, by means of the strong absorption of dyestuff to visible light, also can convert solar energy into electrical energy.This battery is exactly DSSC.
DSSC be 1991 by the Switzerland scientist
A kind of brand-new photochemistry solar cell that professor proposes.Its basic structure is by TiO
2The negative electrode that nano particle forms, contain I
-/ I
- 3The electrolyte of redox couple and the anode formation that contains Catalytic Layer.Based on
The efficient of the new dye sensitization solar battery of battery has reached 11%, and good application prospect is arranged.
Be that the photoelectric conversion efficiency of thin film solar cell is determined by following formula under the monochromatic light irradiation of λ at wavelength:
Wherein LHE (λ) is the sun light intensity that absorbed by the dyestuff ratio with total incident intensity, and it depends primarily on what of absorbing dye quantity in the character of dyestuff and the film;
Be quantum efficiency, namely the excitation electron of dyestuff is injected into the probability on the oxide conduction band; And η
cBe collection efficiency, namely the electronics in conduction band arrives the probability of negative electrode by oxide-film.
According to above-mentioned formula as can be known, in thin film solar cell, play the nano-porous film that receives electronics and transmission electronic effect, should satisfy at least following three conditions:
(1) nano-porous film must have enough large specific area, thereby can adsorb a large amount of dyestuffs;
(2) mode of nano-porous film absorbing dye must guarantee that electronics injects the conduction band of film effectively;
(3) in nano-porous film, electronics has transmission speed faster to reduce the compound of electronics and electrolyte acceptor.
For three conditions above-mentioned, proposed to adopt Fe
2O
3, CdS, SnO
2On the negative electrode of nanoporous oxide semiconductor thin-film as DSSC, but effect but is not very desirable.
The main cause that the photoelectric conversion efficiency of DSSC is lower is to satisfy the 3rd condition.In other words, the electronics in the film is because and electrolyte acceptor compound and the transmission course of " blocking " electronics.
The Another reason that the photoelectric conversion efficiency of DSSC is lower is that the emission spectrum of dyestuff absorption spectrum and the sun does not mate.As a result, the optical absorption spectra of DSSC accounts for to such an extent that ratio is less in sun emission spectrum.In other words, most energy in the solar spectrum can't be utilized effectively in traditional DSSC.
Summary of the invention
The purpose of this invention is to provide a kind of DSSC that effectively improves photoelectric conversion efficiency.
According to an aspect of the present invention, a kind of solar cell is provided, comprise cathode assembly, anode assemblies, be used for cathode assembly and anode assemblies are fitted together and form the sealant of confined space, and be contained in electrolyte in the confined space, wherein cathode assembly comprises lower transparent conductive substrate, the nanometer oxide semiconductor film that forms at lower transparent conductive substrate, and the dyestuff that adheres to of the nano grain surface in the nanometer oxide semiconductor film, and anode assemblies comprises transparent conductive substrate, and the anode electrode layer that forms at upper transparent conductive substrate, described nanometer oxide semiconductor film is oppositely arranged with described anode electrode layer and contacts with electrolyte, wherein said anode assemblies also comprises patterning and comprises the CdTe layer of opening that described anode electrode layer is positioned at the opening of described CdTe layer.
Preferably, in described solar cell, described nanometer oxide semiconductor film comprises the first nanometer oxide semiconductor layer and the second nanometer oxide semiconductor layer that is positioned on the first nanometer oxide semiconductor layer, described the second nanometer oxide semiconductor layer and described anode electrode layer are oppositely arranged, and the radius of the nano particle in described the second nanometer oxide semiconductor layer is greater than the nano particle in the first nanometer oxide semiconductor layer.
Preferably, in described solar cell, described nanometer oxide semiconductor film is selected from TiO
2, ZnO, SnO
2, Nb
2O
5A kind of composition.
Preferably, in described solar cell, the thickness of described nanometer oxide semiconductor film is 1.0-2.0 μ m.
Preferably, in described solar cell, the radius of the nano particle in the described nanometer oxide semiconductor film is 80-120nm.
Preferably, in described solar cell, described anode electrode layer is by a kind of composition that is selected from platinum, the Graphene.
Preferably, in described solar cell, the thickness of described anode electrode layer is 0.2-0.5 μ m.
Preferably, in described solar cell, described CdTe layer is strip, lattice-shaped.
Preferably, in described solar cell, the opening in the described CdTe layer is a kind of in square, rectangle, circle, the hexagon.
According to a further aspect in the invention, provide a kind of method of making solar cell, may further comprise the steps:
A) form cathode assembly, the dyestuff that described cathode assembly comprises lower transparent conductive substrate, adheres at nanometer oxide semiconductor film that lower transparent conductive substrate forms and the nano grain surface in the nanometer oxide semiconductor film;
B) form anode assemblies, described anode assemblies comprises transparent conductive substrate and the anode electrode layer and the CdTe layer that form at upper transparent conductive substrate; And
C) adopt sealant, anode assemblies and cathode assembly are fitted together and form confined space, in confined space, inject electrolyte, so that described nanometer oxide semiconductor film is oppositely arranged with described anode electrode layer and contacts with electrolyte,
Wherein, the step b of described formation anode assemblies) be included on the transparent conductive substrate and form patterning and comprise the CdTe layer of opening and in opening, fill anode electrode layer.
Preferably, in described method, form patterning and comprise that the step of the CdTe layer of opening comprises: deposition CdTe layer, the CdTe layer is carried out smooth and etch opening in the CdTe layer.
Preferably, in described method, in the step of deposition CdTe layer, adopt sputter, evaporation or electro-deposition to form the CdTe layer.
Preferably, in described method, the step of filling anode electrode layer in opening comprises: adopt the block masks of aiming at opening, deposition anode electrode layer in the opening of opening portion the CdTe layer of block masks.
Preferably, in described method, the step of filling anode electrode layer in opening comprises: adopt in the opening of silk screen printing in the CdTe layer and form anode electrode layer.
Preferably, in described method, the step that forms the first nanometer oxide semiconductor layer comprises that the employing sol-gel process prepares nano-TiO
2Slurry; With nano-TiO
2Slurry is printed on the transparent conductive substrate; And oven dry.
Preferably, in described method, the step that forms the second nanometer oxide semiconductor layer comprises employing TiO
2Particle prepares nano-TiO
2Slurry; With nano-TiO
2Slurry is printed on the transparent conductive substrate; And oven dry.
Preferably, in described method, described CdTe layer is strip, lattice-shaped.
Preferably, in described method, the opening in the described CdTe layer is a kind of in square, rectangle, circle, the hexagon.
In solar cell of the present invention, sunlight passes through first the nanometer oxide semiconductor film and is absorbed after the part, then further is transmitted to anode assemblies.Owing to do not cover anode electrode layer on the whole surface of the CdTe layer of patterning, so the CdTe layer can high efficiency absorb sunlight.And, the long wave band that CdTe layer absorbing dye can't absorb, thus the absorption spectrum of DSSC expanded, realized the best match of absorption spectrum and the solar spectrum of solar cell, improved the absorptivity of solar cell to sunlight.
The CdTe layer inspires a large amount of electronics and supplies with electrolyte, so that redox couple electron exchange speed increases in the electrolyte, and has effectively reduced and has been energized into TiO
2Compound and the loss of charge that produces of the electronics of conduction band and electrolyte, thus Effective Raise conversion efficiency and the current density of DSSC.And this also affects electrolytical energy level, improves open circuit voltage, is equivalent to the new CdTe layer that adds the photoelectric current of DSSC has originally been carried out " amplification ".
During solar cell working of the present invention, produce self-built gesture at inside solar energy battery, thereby accelerate electronics transporting from anode to positive electrode direction.
Therefore, the present invention compares with traditional single DSSC, on the basis that has strengthened the dye sensitization reaction, greatly suppressed the generation of dark reaction, increased density of photocurrent, open circuit voltage, and to the utilance of sunlight, thereby effectively improved photoelectric conversion efficiency.
Description of drawings
Fig. 1 is the structural representation according to the anode assemblies among the DSSC of the present invention;
Fig. 2 is the structural representation according to the DSSC of the first embodiment of the present invention;
Fig. 3 is the structural representation of DSSC according to a second embodiment of the present invention;
Fig. 4 is for can be with schematic diagram according to the working mechanism of DSSC of the present invention.
Embodiment
The below describes embodiments of the invention in detail, wherein adopts identical or similar label to represent identical or similar element in institute's drawings attached.These embodiment are exemplary, only are used for explaining the present invention, and can not be interpreted as limitation of the present invention.
Fig. 1 is the structural representation according to the anode assemblies among the DSSC of the present invention.The anode electrode layer 13 (for example platinum) that anode assemblies comprises transparent conductive substrate 11, is positioned at the CdTe layer 12 on the described transparent conductive substrate 11 and is positioned at the opening of described CdTe layer 12.Described CdTe layer 12 is polycrystalline film, and thickness is 1-2.0 μ m.Preferably, the thickness of CdTe layer 12 is 1.5 μ m.The particle diameter of CdTe is 90-120nm in the described CdTe layer 12.Preferably, the particle diameter of CdTe is 100nm in the CdTe layer 12.The thickness of described anode electrode layer 13 is 0.2-0.5 μ m.Preferably, the thickness of anode electrode layer 13 is 0.2 μ m.
CdTe layer shown in Figure 1 is strip.Yet this CdTe layer also can be lattice-shaped, as long as comprise the opening that exposes transparent conductive substrate 11.That opening in the CdTe layer can be is square, a kind of in the rectangle, circle, hexagon.
Fig. 2 is the structural representation according to the DSSC of the first embodiment of the present invention, wherein with anode assemblies shown in Figure 1 10 with hereinafter the cathode assembly 20 of describing is fitted together.This solar cell comprises anode assemblies 10, cathode assembly 20, be used for electrolyte 32 that anode assemblies 10 and cathode assembly 20 were fitted together and formed the sealant 31 of confined space and be contained in confined space.Anode assemblies 10 comprises transparent conductive substrate 11 and the anode electrode layer 13 that forms at upper transparent conductive substrate 11, nanometer oxide semiconductor film 22 is oppositely arranged with anode electrode layer 13 and contacts with electrolyte 32, wherein anode assemblies 10 also comprises patterning and comprises the CdTe layer 12 of opening, and anode electrode layer 13 is positioned at the opening of CdTe layer 12.The dyestuff (not shown) that the nanometer oxide semiconductor film 22 that cathode assembly 20 comprises lower transparent conductive substrate 21, form at lower transparent conductive substrate 21 and the nano grain surface in nanometer oxide semiconductor film 22 adhere to.
In this solar cell, nanometer oxide semiconductor film 22 is comprised of the N-shaped wide bandgap semiconductor, such as TiO
2, ZnO, SnO
2, Nb
2O
5Deng.
In this solar cell, the thickness of nanometer oxide semiconductor film is 1.0-2.0 μ m.
In this solar cell, the radius of the nano particle in the nanometer oxide semiconductor film is 80-120nm.
Fig. 3 is the structural representation of DSSC according to a second embodiment of the present invention.The structure of this solar cell is similar to solar cell shown in Figure 2, and difference only is that nanometer oxide semiconductor film 22 is made of the two-layer of the nano particle that comprises different size.As shown in the figure, nanometer oxide semiconductor film 22 comprises the first nanometer oxide semiconductor layer 22a and the second nanometer oxide semiconductor layer 22b that is positioned on the first nanometer oxide semiconductor layer 22a, the second nanometer oxide semiconductor layer 22b and anode electrode layer 13 are oppositely arranged, and the radius of the nano particle among the second nanometer oxide semiconductor layer 22b is greater than the nano particle among the first nanometer oxide semiconductor layer 22a.
Adopt the first nanometer oxide semiconductor layer 22a and the second nanometer oxide semiconductor layer 22b of variable grain radius to form nanometer oxide semiconductor film 22, can further strengthen the optical absorption of dyestuff, thereby improve photoelectric conversion efficiency.
Below will further describe each step of making according to the method for DSSC of the present invention.
At first, on transparent conductive substrate 11, utilize LPCVD (low-pressure chemical vapor phase deposition) deposit CdTe layer 12.After CdTe layer 12 formed, the irregular newborn CdTe layer 12 of effects on surface carried out chemico-mechanical polishing (CMP), so that actual CdTe layer 12 thickness reach 1.5 μ m.
Next photoetching CdTe layer 12, the high shape-retaining ability of RIE (reactive ion etching) etches optical grating construction.Adopting 5cm * 5cm DSSC in the present embodiment is example, and the spacing of CdTe layer 12 is 1.5mm.
At last, at CdTe layer 12 silk screen printing anode electrode layer 13.Alternatively, can adopt the block masks (not shown) of aiming at opening, sputter anode electrode layer 13 in the opening of opening portion the CdTe layer of block masks.Anode electrode layer 13 thickness are decided to be 0.2 μ m.So far anode assemblies 10 completes.
Next make cathode assembly 20 as shown in Figure 3, comprising being coated with the granule nano-TiOs at transparent conductive substrate 21
2Slurry and bulky grain nano-TiO
2The step of slurry.
At first, transparent conductive substrate 21 cleans post-drying through ultrasonic water bath.
Preparation granule nano-TiO
2Slurry: utilize sol-gel process to prepare nano-TiO
2Slurry.Triethylamine solution 50mL and the 0.1mol/L acetic acid titanium solution 250mL of preparation 0.2mol/L.Under the speed of 120r/min-180r/min stirs, triethylamine solution is joined in the acetic acid titanium solution; In order to make TiO
2Uniform particles prevents that particle from reuniting fast, uses dropping funel that triethylamine solution is joined in the acetic acid titanium solution lentamente.Along with the adding of triethylamine solution, the adularescent floccule generates.Constantly stir, through about 15h, become stable colloidal sol.Then use the 600MM strainer filtering, remove oarse-grained TiO
2It is centrifugal again colloidal sol to be put into high speed freezing centrifuge, obtains the TiO of white
2Precipitation is cleaned the white precipitate several times with deionized water and absolute alcohol.In order to increase the specific area of film, prevent from occurring cracking in the sintering process, at TiO
2Add the 10-20ml polyethylene glycol in the precipitation as surfactant, and stir.Rotary evaporation dewaters in high vacuum at last, after the grinding, is needed granule nano-TiO
2Slurry.
Preparation bulky grain nano-TiO
2Slurry: the commercial TiO that German Degussa company is produced
2P25 particle 6g mix with 1ml acetic acid, put into mortar and ground 5 minutes.Then in mortar, add the 1ml deionized water and ground 1 minute, so repeat 5 times; Add subsequently 1ml ethanol and ground 1 minute, so repeat 15 times; Then add 2.5ml ethanol and ground 1 minute, so repeat 6 times.After all above-mentioned grinding work all finish, with the TiO in the mortar
2Transfer in the large beaker, add the ethanol of 100ml, beaker is placed on the magnetic stirrer stirred 2 minutes.Then in beaker, add 20g sesame oil brain, continue to stir 2 minutes at magnetic stirrer.Then add ethyl cellulose, be dissolved in the ethanolic solution according to the proportioning of 3g (ethyl cellulose): 30g (the absolute ethyl alcohol total amount that adds in the present embodiment), stirred 6 minutes with magnetic stirrer again.Last on rotary evaporator, the ethanol evaporation in the beaker gone out after, bulky grain TiO
2Slurry just prepares complete.
Next transparent conductive substrate 21 is placed on the screen process press, nano-TiO
2Slurry is imprinted on the transparent conductive substrate 21.To be printed on TiO
2Transparent conductive substrate 21 be placed on the electric hot plate baking 10 minutes, Temperature Setting is 80 ℃, makes the solvent slow evaporation fall, thereby forms the first nanometer oxide semiconductor layer 22a.Through scanning electronic microscope observation, the nano-TiO among the first nanometer oxide semiconductor layer 22a
2Basic is spherical, and mean radius is about 25nm.The thickness that records the first nanometer oxide semiconductor layer 22a by step instrument is 2.4 μ m.
The transparent conductive substrate 21 that then will have the first nanometer oxide semiconductor layer 22a is placed on the screen process press again, with the bulky grain TiO for preparing
2Slurry is imprinted on the first nanometer oxide semiconductor layer 22a.After taking off transparent conductive substrate 21, on electric hot plate, remove moisture with 80 ℃ of baking 10min, again transparent conductive substrate 21 is placed 450 ℃ of lower bakings of Muffle furnace one hour, thereby form the second nanometer oxide semiconductor layer 22b.Nano-TiO among the second nanometer oxide semiconductor layer 22b
2Basic is spherical, and mean radius is about 80nm, the second nanometer oxide semiconductor layer 22b.The thickness that records the second nanometer oxide semiconductor layer 22b by step instrument is 4.6 μ m.
Further, according to following steps anode assemblies 10 and cathode assembly 20 compositions are formed solar cell together.
Adopt sealant 31 that anode assemblies 10 and cathode assembly 20 are fitted together, the second nanometer oxide semiconductor layer 22b and anode electrode layer 13 are oppositely arranged, to form confined space.In confined space, inject electrolyte 32 (for example electrolyte solution or solid electrolyte).
The solar cell that assembling is finished as shown in Figure 3.CdTe layer 12 in the anode assemblies 10 contacts electrolyte 32 with the first nanometer oxide semiconductor layer 22a in anode electrode layer 13 and the cathode assembly 20 with the second nanometer oxide semiconductor layer 22b.CdTe layer 12 injects the photoelectron electric current as the electron injecting layer of DSSC in electrolyte 32 when being subject to solar light irradiation.
Above-mentioned transparent conductive substrate 11 and 21 for example is can be available from FTO (mixing the tin oxide of fluorine (the F)) electro-conductive glass of Japanese Nippon Sheet Glass company.Can buy nano-oxide particles in market, for example the commercial TiO that produces of German Degussa company
2The P25 particle.Can buy dyestuff in market, for example the N3 dyestuff of DaLian, China seven-colour-light company production.
Fig. 4 is for can be with schematic diagram according to the working mechanism of DSSC of the present invention.The left side is negative electrode among the figure, and the right side is anode among the figure.Wherein, b) dyestuff S is directly injected in the semi-conductive conduction band of nanoporous oxide layer by the electronics that absorbs the photon excitation generation; C) electronics is from TiO
2Conduction band transports to negative electrode, is collected by negative electrode; D) oxidized dye molecule reduces by redox couple.F wherein), g) process shown in two bars lines, be called as electron recombination or block, be the inefficient main cause of DSSC.Especially wherein process shown in the f enters TiO
2Electronics in the conduction band is grabbed by iodide ion, is acknowledged as the greatest factor that DSSC efficient can't further improve.Innovation of the present invention is to introduce film solar battery structure, utilizes the very good optical excitation characteristic of thin-film solar cells, produces electronics, and replenishing the right electronics of electrolyte oxidation reduction need lack, and suppresses f) shown in process, accelerate d) shown in process.In addition, as shown in Figure 4, the generation of built-in field E just in time can be accelerated the electron motion of former DSSC, so that efficient further improves.
As can be seen from the above embodiments, can absorb the long wave band that the solar cell absorbing dye can't absorb owing to the CdTe layer in the embodiment of the invention, inspire a large amount of electronics and supply with electrolyte, so that redox couple electron exchange speed increases in the electrolyte, and effectively reduced and be energized into TiO
2Compound and the loss of charge that produces of the electronics of conduction band and electrolyte, thereby Effective Raise when the conversion efficiency of DSSC and current density, affect electrolytical energy level and increase open circuit voltage, this is equivalent to the new thin-film solar cells that adds the photoelectric current of DSSC has originally been carried out " amplification "; Simultaneously, when solar cell working, inner meeting produces self-built gesture, accelerates electronics transporting from anode to cathode direction.The present invention compares with traditional single DSSC, and on the basis that has strengthened the dye sensitization reaction, the generation of the dark reaction that greatly suppresses has increased density of photocurrent, open circuit voltage, and to the utilance of sunlight.
Meaning of the present invention is the optical excitation characteristic of utilizing the CdTe layer very good, produces electronics, and replenishing the right electronics of electrolyte oxidation reduction need lack, and suppresses electronics and blocks (dark reaction) process, accelerates the dye sensitization process.In addition, an other meaning of the present invention is, the generation of the inner built-in field of hull cell just in time can be accelerated the electron motion of former DSSC, so that efficient further improves.Over nearly 15 years, produce little effect for the transformation of DSSC, be badly in need of feasible method, the present invention has overcome single DSSC defective, is to the innovation of traditional DSSC on system level.
The above only is preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.
Claims (19)
1. solar cell, comprise cathode assembly, anode assemblies, be used for cathode assembly and anode assemblies are fitted together and form the sealant of confined space, and be contained in electrolyte in the confined space, wherein cathode assembly comprises lower transparent conductive substrate, the nanometer oxide semiconductor film that forms at lower transparent conductive substrate, and the dyestuff that adheres to of the nano grain surface in the nanometer oxide semiconductor film, and anode assemblies comprises transparent conductive substrate, and the anode electrode layer that forms at upper transparent conductive substrate, described nanometer oxide semiconductor film is oppositely arranged with described anode electrode layer and contacts with electrolyte
Wherein, described anode assemblies also comprises patterning and comprises the CdTe layer of opening, and described anode electrode layer is positioned on the upper transparent conductive substrate of opening of described CdTe layer.
2. solar cell according to claim 1, wherein said nanometer oxide semiconductor film comprises the first nanometer oxide semiconductor layer and the second nanometer oxide semiconductor layer that is positioned on the first nanometer oxide semiconductor layer, described the second nanometer oxide semiconductor layer and described anode electrode layer are oppositely arranged, and the radius of the nano particle in described the second nanometer oxide semiconductor layer is greater than the nano particle in the first nanometer oxide semiconductor layer.
3. solar cell according to claim 1 and 2, wherein said nanometer oxide semiconductor film is by being selected from TiO
2, ZnO, SnO
2, Nb
2O
5A kind of composition.
4. solar cell according to claim 1 and 2, the thickness of wherein said nanometer oxide semiconductor film is 1.0-2.0 μ m.
5. the solar cell of stating according to claim 1, the radius of the nano particle in the wherein said nanometer oxide semiconductor film is 80-120nm.
6. solar cell according to claim 1, wherein said anode electrode layer is by a kind of composition that is selected from platinum, the Graphene.
7. solar cell according to claim 1, the thickness of wherein said anode electrode layer is 0.2-0.5 μ m.
8. solar cell according to claim 1, wherein said CdTe layer is strip, lattice-shaped.
9. solar cell according to claim 1, the opening in the wherein said CdTe layer are a kind of in square, rectangle, circle, the hexagon.
10. method of making solar cell may further comprise the steps:
A) form cathode assembly, the dyestuff that described cathode assembly comprises lower transparent conductive substrate, adheres at nanometer oxide semiconductor film that lower transparent conductive substrate forms and the nano grain surface in the nanometer oxide semiconductor film;
B) form anode assemblies, described anode assemblies comprises transparent conductive substrate and the anode electrode layer and the CdTe layer that form at upper transparent conductive substrate; And
C) adopt sealant, anode assemblies and cathode assembly are fitted together and form confined space, in confined space, inject electrolyte, so that described nanometer oxide semiconductor film is oppositely arranged with described anode electrode layer and contacts with electrolyte,
Wherein, the step b of described formation anode assemblies) be included in formation patterning on the transparent conductive substrate and comprise that the CdTe layer of opening and the upper transparent conductive substrate in opening form anode electrode layer.
11. method according to claim 10 wherein forms patterning and comprises that the step of the CdTe layer of opening comprises: deposition CdTe layer, the CdTe layer is carried out smooth and etch opening in the CdTe layer.
12. method according to claim 10 wherein adopts sputter, evaporation or electro-deposition to form the CdTe layer in the step of deposition CdTe layer.
13. method according to claim 10, the step of wherein filling anode electrode layer in opening comprises: adopt the block masks of aiming at opening, deposition anode electrode layer in the opening of opening portion the CdTe layer of block masks.
14. method according to claim 10, the step of wherein filling anode electrode layer in opening comprises: adopt in the opening of silk screen printing in the CdTe layer and form anode electrode layer.
15. method according to claim 10, the step that wherein forms cathode assembly is included in and forms the first nanometer oxide semiconductor layer on the lower transparent conductive substrate and form the second nanometer oxide semiconductor layer as described nanometer oxide semiconductor film at the first nanometer oxide semiconductor layer, and the radius of the nano particle in described the second nanometer oxide semiconductor layer is greater than the nano particle in the first nanometer oxide semiconductor layer.
16. comprising, method according to claim 15, the step that wherein forms the first nanometer oxide semiconductor layer adopt sol-gel process to prepare nano-TiO
2Slurry; With nano-TiO
2Slurry is printed on the transparent conductive substrate; And oven dry.
17. comprising, method according to claim 15, the step that wherein forms the second nanometer oxide semiconductor layer adopt TiO
2Particle prepares nano-TiO
2Slurry; With nano-TiO
2Slurry is printed on the transparent conductive substrate; And oven dry.
18. method according to claim 10, wherein said CdTe layer is strip, lattice-shaped.
19. method according to claim 10, the opening in the wherein said CdTe layer are a kind of in square, rectangle, circle, the hexagon.
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| CN101241940A (en) * | 2006-12-22 | 2008-08-13 | 索尼德国有限责任公司 | A photovoltaic cell |
| CN101609750A (en) * | 2009-07-16 | 2009-12-23 | 长兴化学工业股份有限公司 | DSSC and method for making thereof |
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| CN101609750A (en) * | 2009-07-16 | 2009-12-23 | 长兴化学工业股份有限公司 | DSSC and method for making thereof |
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