CN102193062A - Method for detecting source leakage defect of PMOS (P-channel metal oxide semiconductor) device - Google Patents
Method for detecting source leakage defect of PMOS (P-channel metal oxide semiconductor) device Download PDFInfo
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- CN102193062A CN102193062A CN2010101288821A CN201010128882A CN102193062A CN 102193062 A CN102193062 A CN 102193062A CN 2010101288821 A CN2010101288821 A CN 2010101288821A CN 201010128882 A CN201010128882 A CN 201010128882A CN 102193062 A CN102193062 A CN 102193062A
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Abstract
The invention relates to a method for detecting a source leakage defect of a PMOS (P-channel metal oxide semiconductor) device, which comprises the following steps of: (a) providing a wafer which comprises a substrate, a well region, a grid electrode, a source electrode, a leakage electrode, an insulating medium layer, and a metal connecting wire communicated with the source electrode or the leakage electrode; (b) at least depositing a dielectric layer on the surface of the metal connecting wire, thereby reducing a second crossing point of a relation curve between the electron reflectivity of the metal connecting wire and the incident electron energy to E2'; and (c) emitting an electron beam to scan the surface of the wafer to detect the source leakage having the leakage defect, wherein the energy of the electron beam exceeds E2'. By using the method, the source leakage defect detection can be performed by using lower electron beam energy and can be performed within a limit range of an existing electron beam defect scanner platform, thereby being helpful to the yield detection process for the PMOS device.
Description
Technical field
The present invention relates to the detection method of defective in a kind of semiconductor, especially the sunken detection method of the source burst of PMOS device.
Background technology
Along with dwindling day by day of dimensions of semiconductor devices, the ion leakage problem becomes the key factor that influences yield of devices gradually.For example, for the PMOS device, when its size narrows down to 45nm and more hour, the leakage problem that leak in the source has limited the yield of device greatly.
A kind of common PMOS device source is sewed the sunken detection method of burst: referring to Fig. 1, at first, form metal interconnecting wires in the leakage of source; Use electron beam (E-BEAM) scanning wafer surface then, the comparison by adjacent repetitive is to find defect area.Certain die (tube core of wafer for example, perhaps be called crystal grain) on have a plurality of adjacent repetitives, repeating the unit with the first adjacent successively repetitive, second repetitive, the 3rd is example, adopt electron beam defective scanner to the crystal column surface divergent bundle and receive the reflection electronic of crystal column surface, the reflection electronic concentration on detecting a certain ad-hoc location of second repetitive and first repetitive, the 3rd repeat the unit to be had when unusual, thinks that then there is defective in this ad-hoc location of second repetitive.Sometimes can also show the reflection electronic concentration of each point on the wafer with display screen, the brightness of the big more then correspondence position of reflection electronic concentration is high more.To further explain in detail below this detection side's ratio juris.
For the metal interconnecting wires with selected material (the most common situation is a tungsten), electron reflection rate (reflection electronic concentration/incident electron concentration) is relevant with the energy of incident electron.See Fig. 2 for details, as the energy LE=of the incident electron first point of crossing E
1The perhaps LE=second point of crossing E
2The time, electron reflection rate=1, reflection electronic concentration is consistent with incident electron concentration, and is not charged on the metal interconnecting wires; As LE＜E
1Perhaps LE＞E
2The time, electron reflection rate＜1, reflection electronic concentration claims usually that less than incident electron concentration this state is the negative electricity state because on the metal interconnecting wires with electronegative; Work as E
1＜LE＜E
2The time, electron reflection rate＞1, reflection electronic concentration claims usually that greater than incident electron concentration this state is positive electricity condition because on the metal interconnecting wires with positively charged.
The slip-stick artist wishes that employing has LE＞E
2The incident electron of energy carries out the PMOS source and sews the sunken detection of burst.Because leaking with the source of PMOS device, metal interconnecting wires is connected, the source is leaked and is had the P+ doping, and well region is the N doping, when metal interconnecting wires has positive charge, the source is leaked with respect to well region and is formed the PN forward bias, whether the positive charge on the metal interconnecting wires can be led away, no matter then exist the source to sew burst fall into, the conductive capability of PMOS is all stronger; And when metal interconnecting wires had negative charge, the source was leaked with respect to well region and is formed the PN reverse bias, and its conductive capability is faint, yet when existing the source to sew burst when sunken, conductive capability will greatly strengthen.Furthermore, if incident electron has E
1＜LE＜E
2Energy, metal interconnecting wires positively charged, no matter leaking, the source of PMOS whether has leakage defect, positive charge on the metal interconnecting wires can both be led away, be made the reflection electronic on the metal interconnecting wires can keep higher concentration smoothly, and the two difference is little, distinguish difficulty; If incident electron has LE＞E
2Energy, metal interconnecting wires electronegative, when the PMOS device just often, negative charge is assembled on metal interconnecting wires in a large number in a large number, the concentration of reflection electronic keeps higher, when the PMOS device exists the source to sew, negative charge on the metal interconnecting wires is led away smoothly, reflection electronic is difficult to be excited out, and the two difference is huge, be easy to explanation.From the above analysis, has LE＞E when incident electron
2Energy the time, will be easy to distinguish whether the PMOS device exists the source to sew the leakage problem.If show the scanning result of metal interconnecting wires by display screen, then be the normal PMOS that is of bright state, be gloomy state for to exist the source to sew the PMOS of leakage.More the detection principle about electron beam can be the United States Patent (USP) Method And System For Detecting Or Reviewing Open Contacts On ASemiconductor Device of " US2008054931A1 " referring to publication number.
In theory, the energy LE of the electron beam that electron beam defective scanning device is sent is promoted to the E greater than metal interconnecting wires
2The time, promptly can easily finish the PMOS device source and sew the omission survey.Yet, existing equipment can electrons excited the energy of bundle usually all less than the E of metal interconnecting wires
2, for example the maximum excitation energy of the existing electron beam defective scanning machine of using always is 2.8KeV, and the E of metal interconnecting wires
2Then surpass 3.0KeV.How to utilize existing electron beam defective scanning device to finish the PMOS device source in practice and sew the omission survey, become puzzlement this area slip-stick artist's a difficult problem.
Summary of the invention
Technical matters to be solved by this invention is how to adopt existing electron beam defective scanning device, and the source of detecting the PMOS device with more low-energy incident beam is sewed burst and fallen into.
PMOS device source proposed by the invention is sewed the detection method that burst falls into, comprise step down: (a) provide wafer, this wafer comprises substrate, be formed on the well region in this substrate, be formed on the grid of the PMOS device on this well region, be formed on source electrode, the drain electrode of the PMOS device in the well region of grid both sides, be formed on the insulating medium layer on substrate and the grid, be formed on the metal interconnecting wires that is communicated with source electrode or drain electrode in the insulating medium layer; (b), make second point of crossing of relation curve of the electron reflection rate of metal interconnecting wires and incident electron energy be reduced to E at least at the surface deposition dielectric layer of metal interconnecting wires
2'; (c) leak to detect the source that has leakage defect on divergent bundle scanning wafer surface, and the energy of electron beam surpasses E
2
Because the employing of technique scheme, the present invention has the following advantages: by the surface deposition dielectric at metal interconnecting wires, make metal interconnecting wires have the second point of crossing E of reduction
2', only need can carry out the source at the negative electricity state of metal interconnecting wires and sew the sunken detection of burst with lower beam energy, detect this moment and can in the limit range of existing electron beam defective scanning machine, carry out, the yield characterization processes of PMOS device is had very great help.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 sews the method schematic diagram that burst falls into for the available technology adopting electron beam detects the PMOS device source;
Fig. 2 is the electron reflection rate of metal and the graph of relation of incident electron energy;
Fig. 3 sews the method schematic diagram that burst falls into for employing electron beam of the present invention detects the PMOS device source;
Fig. 4 is the electron reflection rate of metal interconnecting wires shown in Figure 3 and the graph of relation of incident electron energy;
Fig. 5 is an actual detected exemplary plot as a result.
Embodiment
On thinking, aim of the present invention is by dielectric layer deposition on metal interconnecting wires, thereby makes the electron reflection rate relation curve of metal interconnecting wires change, with the E of metal interconnecting wires
2Be reduced within the working range of existing electron beam defective scanning device.
Referring to Fig. 3, PMOS device source proposed by the invention is sewed the sunken detection method of burst and is comprised the steps: that (a) provides wafer, this wafer comprises substrate 1, be formed on the well region 2 in this substrate 1, be formed on the grid 3 of the PMOS device on this well region 2, be formed on source electrode 4, the drain electrode 5 of the PMOS device in the well region 2 of grid 3 both sides, be formed on the insulating medium layer 6 on substrate 1 and the grid 3, be formed in the insulating medium layer 6 with the source electrode 4 or 5 metal interconnecting wires that are communicated with 7 that drain; (b), make second point of crossing of relation curve of the electron reflection rate of metal interconnecting wires 7 and incident electron energy be reduced to E at least at the surface deposition dielectric layer 8 of metal interconnecting wires 7
2'; (c) divergent bundle scanning wafer surface to be detecting the source electrode 4 that has leakage defect or to drain 5, and the energy of electron beam surpasses E
2'.
Specifically, in step (a), all technology is existing processes well known, and wherein the manufacture craft of metal interconnecting wires 7 can be to form exposure source electrode 4 or 5 the through hole of draining in insulating medium layer 6; In through hole and insulating medium layer 6 surface form metal levels, the most frequently used tungsten of this metal level also can be aluminium or other metal certainly under some occasion; Adopt CMP technology to remove the metal level on insulating medium layer 6 surfaces, form described metal interconnecting wires 7.
In step (b), described dielectric layer 8 can be insulation dielectric commonly used, for example silicon nitride, doping or unadulterated silicon dioxide etc., this dielectric 8 can be formed on the uniform one deck on insulating medium layer 6 and metal interconnecting wires 7 surfaces for adopting chemical vapor deposition.
Under some occasion, be the dielectric layer 8 of the silicon nitride material of 100～300 dust thickness by deposit thickness, can be reduced to second point of crossing of the metal interconnecting wires 7 of tungsten material below the 2.3KeV.Referring to accompanying drawing 4, wherein dark strokes is the original electron reflectivity of tungsten and the graph of relation of incident electron energy, the light color lines are the electron reflection rate and the graph of relation of incident electron energy that has deposited tungsten after the silicon nitride, as seen, and the second point of crossing E of relative dark strokes
2, light lines have the second lower point of crossing E
2'.Fig. 4 is a schematic diagram only, is not the material that is used to limit metal interconnecting wires 7 and dielectric 8, thickness etc., and the inventor learns by a large amount of experiments, after the metal surface has deposited dielectric, all effect shown in Figure 4 can occur.
In step (c), as the E of dielectric layer 8 with metal interconnecting wires 7
2' when being reduced to the permission energy value less than existing electron beam defective scanning machine, can surpass E to this crystal column surface emitted energy with existing board
2' electron beam scan, and judge that the source is leaked and whether have leakage defect.
As the description in the background technology, when energy surpasses E
2' electron beam be emitted to crystal column surface, metal interconnecting wires 7 is excited, is reflected electronics, this moment is electronegative on the metal interconnecting wires 7, is the negative electricity state.When the PMOS device is proper device, be the PN negative bias between source leakage and the well region, conductive capability is extremely faint, and the electronics on the metal interconnecting wires 7 is gathered, and the concentration of reflection electronic can keep high value.Leak relative well region when the source of PMOS device and have leakage, then form current path between source leakage and the substrate, the electronics on the metal interconnecting wires 7 is led away, and the concentration of reflection electronic can only keep one than low value.
It can be to utilize adjacent repetitive to compare that the sunken determination methods of burst is sewed in the source, when finding that the electron concentration unusual (concentration is on the low side) of position is leaked in certain source, illustrates that then there are leakage defect in this source electrode or drain electrode.Can also utilize display screen reading scan result,, show on the display screen that the relevant position is highlighted state when leak just often in the source; When the existence leakage was leaked in the source, display screen showed that the relevant position is gloomy state.In actual the operation, zone corresponding with insulating medium layer 6 on the wafer is gloomy state always, is difficult to be inspired reflection electronic because insulating medium layer 6 is compared metal.
Referring to accompanying drawing 5, be adjacent two repetitives (only having shown the part), electron beam defective scanning device compares the reflection electronic bundle concentration of right side repetitive each point and the reflection electronic bundle concentration of left side repetitive respective point, there is the difference that exceeds standard in reflection electronic bundle concentration among the discovery figure in the circle scope, reflection electronic bundle concentration in the repetitive circle scope of right side is Comparatively speaking low excessively, when this circle scope is leaked corresponding to the source, infer that there is leakage in this source leakage.Certainly,, also need right side repetitive and next repetitive are compared,, can conclude that then this point exists the source to sew leakage if the reflection electronic bundle concentration that comparison result remains in the repetitive circle scope of right side is crossed when hanging down in order to improve accuracy rate.Under some occasion, can also show the reflection electronic concentration of each point with display screen, the bright more reflection electronic concentration that shows of the point in the accompanying drawing 5 is high more.
Need to prove that purport of the present invention is that deposition by dielectric layer 8 with second point of crossing of the relation curve of the electron reflection rate that reduces metal interconnecting wires 7 and incident electron intensity, then can adopt the conventional sense means to detect afterwards.These conventional sense means can be the comparison of adjacent repetitive, can also be the comparison of product and standard form (reference).The present invention is not limited for detection means.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (6)
1. a PMOS device source is sewed the detection method that burst falls into, it is characterized in that comprising the steps: that (a) provides wafer, this wafer comprises substrate, be formed on the well region in this substrate, be formed on the grid of the PMOS device on this well region, be formed on source electrode, the drain electrode of the PMOS device in the well region of grid both sides, be formed on the insulating medium layer on substrate and the grid, be formed on the metal interconnecting wires that is communicated with source electrode or drain electrode in the insulating medium layer; (b), make second point of crossing of relation curve of the electron reflection rate of metal interconnecting wires and incident electron energy be reduced to E at least at the surface deposition dielectric layer of metal interconnecting wires
2'; (c) divergent bundle scanning wafer surface to be detecting source electrode or the drain electrode that has leakage defect, and the energy of electron beam surpasses E
2'.
2. detection method as claimed in claim 1 is characterized in that: the material of described dielectric layer is a kind of in silicon nitride, the monox.
3. detection method as claimed in claim 1 is characterized in that: described dielectric layer thickness is 100～300 dusts.
4. detection method as claimed in claim 1 is characterized in that: described E
2' less than 2.3KeV.
5. detection method as claimed in claim 1 is characterized in that: the material of described metal interconnecting wires is a tungsten.
6. detection method as claimed in claim 1 is characterized in that: described dielectric layer is formed on the surface of described insulating medium layer and metal interconnecting wires.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010128882 CN102193062B (en) | 2010-03-19 | 2010-03-19 | Method for detecting source leakage defect of PMOS (P-channel metal oxide semiconductor) device |
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|---|---|---|---|
| CN 201010128882 CN102193062B (en) | 2010-03-19 | 2010-03-19 | Method for detecting source leakage defect of PMOS (P-channel metal oxide semiconductor) device |
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| CN102193062A true CN102193062A (en) | 2011-09-21 |
| CN102193062B CN102193062B (en) | 2013-07-31 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871922A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for detecting polycrystalline silicon grid etching defect by adopting voltage contrast test structure |
| CN105261574A (en) * | 2015-10-28 | 2016-01-20 | 上海华力微电子有限公司 | Method for eliminating electrical noise interference |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414265A (en) * | 1993-09-09 | 1995-05-09 | The United States Of America As Represented By The Secretary Of The Army | Line-width measurements of metallization coated with insulator on microelectronic circuits using energy dispersive x-ray analysis |
| CN1355558A (en) * | 2000-11-23 | 2002-06-26 | 三星电子株式会社 | Device for testing defect in semiconductor device and method for using said device |
| US20030038645A1 (en) * | 2001-08-27 | 2003-02-27 | Seiko Epson Corporation | Electron beam test system and electron beam test method |
| US7170056B2 (en) * | 2004-06-21 | 2007-01-30 | Applied Materials, Israel, Ltd. | Methodology and apparatus for leakage detection |
-
2010
- 2010-03-19 CN CN 201010128882 patent/CN102193062B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5414265A (en) * | 1993-09-09 | 1995-05-09 | The United States Of America As Represented By The Secretary Of The Army | Line-width measurements of metallization coated with insulator on microelectronic circuits using energy dispersive x-ray analysis |
| CN1355558A (en) * | 2000-11-23 | 2002-06-26 | 三星电子株式会社 | Device for testing defect in semiconductor device and method for using said device |
| US20030038645A1 (en) * | 2001-08-27 | 2003-02-27 | Seiko Epson Corporation | Electron beam test system and electron beam test method |
| US7170056B2 (en) * | 2004-06-21 | 2007-01-30 | Applied Materials, Israel, Ltd. | Methodology and apparatus for leakage detection |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103871922A (en) * | 2014-02-21 | 2014-06-18 | 上海华力微电子有限公司 | Method for detecting polycrystalline silicon grid etching defect by adopting voltage contrast test structure |
| CN105261574A (en) * | 2015-10-28 | 2016-01-20 | 上海华力微电子有限公司 | Method for eliminating electrical noise interference |
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|---|---|
| CN102193062B (en) | 2013-07-31 |
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