CN102181939A - Method for controlling growing lengths of silicon nanowires - Google Patents
Method for controlling growing lengths of silicon nanowires Download PDFInfo
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- CN102181939A CN102181939A CN 201110073597 CN201110073597A CN102181939A CN 102181939 A CN102181939 A CN 102181939A CN 201110073597 CN201110073597 CN 201110073597 CN 201110073597 A CN201110073597 A CN 201110073597A CN 102181939 A CN102181939 A CN 102181939A
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Abstract
The invention discloses a method for controlling growing lengths of silicon nanowires. According to the method, a water bath kettle is used for heating so as to control a growing temperature of the silicon nanowires and the growing lengths of the nanowires are controlled by controlling the temperature, and thus, the problem that in the prior art for preparing the silicon nanowires by a wet etching process, the silicon nanowires with large length-width ratios are difficult to generate is solved. The method disclosed by the invention has simple and reliable process and low cost, can be used for batch production and lays a foundation for preparing a nano device on the basis of the silicon nanowires with different length-width ratios.
Description
Technical field
The present invention relates to the nano material preparation technical field, particularly a kind of method of controlling silicon nanowires growth length with heating in water bath.
Background technology
In nearest decades, the preparation of low-dimensional nano structure material, sign and application have caused that people greatly pay close attention to, and silicon nanowire material shows unique optics and electrology characteristics such as distinctive quantum limitation effect, quantum tunneling effect, enclosed pasture blocking effect, high surface because have with the compatible of traditional integrated circuit technology and compare the body silicon materials especially, becoming one of optimal material of preparation micro-nano electron device, is the research hot issue of current field of nanometer technology.
When preparing electron device with the one dimension silicon nanowires, the long-width ratio of silicon nanowires is one of the major reason of the integrated level, device performance etc. of decision device.Because the diameter of silicon nanowires is wayward between 20nm-200nm, the growth length of therefore controlling silicon nanowires is the main method of making the controlled silicon nanowires of long-width ratio.
Being used for the method for extensive grow silicon nanowires at present is to utilize wet corrosion technique.This method is with low cost, and is simple to operate.The length main path of this method control silicon nanowires is a controlling reaction time at present.But silicon nanowires easily lodges under the longer reaction times, and institute's grown nano wire array is irregular, is unfavorable for the growth of aspect than silicon nanowires.
Summary of the invention
The objective of the invention is at the existing in prior technology defective and the market requirement, the method that provides a kind of simple heating in water bath to control silicon nanowires growth length prepares in the silicon nanowires existing difficult generation aspect than the problem of silicon nanowires to solve existing wet etching.
The concrete technical scheme that realizes the object of the invention is:
A kind of method of controlling silicon nanowires growth length, it comprises following concrete steps:
A, get N type 100 crystal orientation, be of a size of 0.5～1cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, configuration etching agent: the composition proportion of etching agent is that the Silver Nitrate of 35mmol/L and concentration are the mixing solutions of 20% hydrofluoric acid; Wherein: the volume ratio of hydrofluoric acid and deionized water is 1: 4;
C, the water-bath temperature is set at 20～70 ℃, the plastics reactor that fills etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor, wherein: the every cm of silicon chip reaction area
2At least dispose the 30ml etching agent;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of different lengths on silicon chip.
Compared with prior art, the present invention can either grow the silicon nanowires of aspect ratio with the method for heating in water bath control silicon nanowires growth length, can guarantee evenly arranging of silicon nanowire array again, and growth time weak point, simple and reliable process, cost low, can produce in batches.For preparation is laid a good foundation based on the nano-device of different long-width ratio silicon nanowires.
Description of drawings
Fig. 1 is the SEM figure of N type silicon nanowires in growth length after 1 hour under the different bath temperatures;
Fig. 2 is the graph of relation of N type silicon nanowires growth length and temperature.
Embodiment
Below in conjunction with drawings and Examples the present invention is done further detailed, complete explanation:
A, get N type 100 crystal orientation, be of a size of 0.5 * 0.5cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 20 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-a.
Embodiment 2
A, get N type 100 crystal orientation, be of a size of 1 * 1cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 30 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-b.
Embodiment 3
A, get N type 100 crystal orientation, be of a size of 0.7 * 0.7cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 40 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, after will cleaning when treating temperature-stable the twin polishing silicon chip insert in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-c.
Embodiment 4
A, get N type 100 crystal orientation, be of a size of 0.8 * 0.8cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 50 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-d.
Embodiment 5
A, get N type 100 crystal orientation, be of a size of 1 * 1cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 60 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-e.
Embodiment 6
A, get N type 100 crystal orientation, be of a size of 0.5 * 0.5cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, weighing AgNO
30.595g, it is dissolved in the 50ml deionized water, sonic oscillation fully dissolves it, gets silver nitrate solution; With this silver nitrate solution that configures and concentration is that 40% 1: 1 by volume mixed of hydrofluoric acid solution is even, the etching agent of 100ml;
C, the water-bath temperature is set at 70 ℃, the plastics reactor that fills above-mentioned etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of certain-length on silicon chip, sees Fig. 1-f.
The present invention utilizes the water-bath heating can stablize the growth temperature of controlling silicon nanowires easily, and just can control the growth length of silicon nanowires easily by controlled temperature, and then reach the purpose of control silicon nanowires breadth-length ratio by growth temperature that sums up and the relation of growing length.For preparation is laid a good foundation based on the nano-device of different long-width ratio silicon nanowires.
Claims (1)
1. method of controlling silicon nanowires growth length is characterized in that this method comprises following concrete steps:
A, get N type 100 crystal orientation, be of a size of 0.5～1cm twin polishing silicon chip, adopt RCA standard cleaning flow process to clean;
B, configuration etching agent: the composition proportion of etching agent is that the Silver Nitrate of 35mmol/L and concentration are the mixing solutions of 20% hydrofluoric acid; Wherein: the volume ratio of hydrofluoric acid and deionized water is 1: 4;
C, the water-bath temperature is set at 20～70 ℃, the plastics reactor that fills etching agent solution is put into water-bath, the twin polishing silicon chip after will cleaning when treating temperature-stable is inserted in the plastics reactor, wherein: the every cm of silicon chip reaction area
2At least dispose the 30ml etching agent;
D, reaction were taken out after 1 hour, put into concentration and be 65～68% salpeter solution reaction 30 seconds, removed the silver of silicon chip surface, used washed with de-ionized water again, dried under the room temperature, and growth has the silicon nanowires of different lengths on silicon chip.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817084A (en) * | 2012-08-03 | 2012-12-12 | 华北电力大学 | Preparation method of silicon nanowire double-layer array structure material |
| CN110021680A (en) * | 2018-01-10 | 2019-07-16 | 天津大学 | Silicon nanowires optical sensitive material of transient response and its preparation method and application |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN101280425A (en) * | 2008-05-23 | 2008-10-08 | 华东师范大学 | Method for non-phosphate electroless nickel plating on silicon nanowires |
| WO2009026466A1 (en) * | 2007-08-21 | 2009-02-26 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
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- 2011-03-25 CN CN 201110073597 patent/CN102181939A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009026466A1 (en) * | 2007-08-21 | 2009-02-26 | The Regents Of The University Of California | Nanostructures having high performance thermoelectric properties |
| CN101266919A (en) * | 2008-04-25 | 2008-09-17 | 华东师范大学 | A method for selectively etching silicon nano line |
| CN101280425A (en) * | 2008-05-23 | 2008-10-08 | 华东师范大学 | Method for non-phosphate electroless nickel plating on silicon nanowires |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817084A (en) * | 2012-08-03 | 2012-12-12 | 华北电力大学 | Preparation method of silicon nanowire double-layer array structure material |
| CN102817084B (en) * | 2012-08-03 | 2015-06-10 | 华北电力大学 | Preparation method of silicon nanowire double-layer array structure material |
| CN110021680A (en) * | 2018-01-10 | 2019-07-16 | 天津大学 | Silicon nanowires optical sensitive material of transient response and its preparation method and application |
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Application publication date: 20110914 |