CN102181927A - Method for preparing zinc oxide nano-array on flexible substrate at low temperature - Google Patents
Method for preparing zinc oxide nano-array on flexible substrate at low temperature Download PDFInfo
- Publication number
- CN102181927A CN102181927A CN 201110079276 CN201110079276A CN102181927A CN 102181927 A CN102181927 A CN 102181927A CN 201110079276 CN201110079276 CN 201110079276 CN 201110079276 A CN201110079276 A CN 201110079276A CN 102181927 A CN102181927 A CN 102181927A
- Authority
- CN
- China
- Prior art keywords
- zinc oxide
- substrate
- array
- oxide nano
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of preparation of nano-material arrays and provides a method for preparing a zinc oxide nano-array at low temperature. In the method, a zinc oxide crystal seed layer is prepared on the surface of a substrate through low-temperature chemical reaction, and then, the zinc oxide nano-array is synthesized through low-temperature hydrothermal reaction. The method comprises the following steps of: taking an ethanol solution of zinc acetate and an ethanol solution of sodium hydroxide as raw materials for preparing the zinc oxide crystal seed layer; soaking the cleaned substrate in the two solutions alternately, baking for many times, then uniformly dropping a small amount of deionized water, and baking to prepare the zinc oxide crystal seed layer on the substrate; putting the substrate of the prepared crystal seed layer into the mixed aqueous solution of zinc nitrate and hexamethylene tetramine, and insulating for a period of time; and taking out the substrate, cleaning, and then drying to obtain a nano-zinc oxide array. The method provided by the invention realizes the purpose of preparing zinc oxide nano-arrays in a large area at low temperature (lower than 100 DEG C), and has the advantages of simple process and low cost.
Description
Technical field
The invention belongs to the preparing technical field of nano material array, the method for preparing zinc oxide nano array under a kind of cold condition is provided, promptly be reflected at substrate surface preparation zinc oxide crystal seed layer, subsequently by low-temperature hydrothermal reaction synthesizing zinc oxide nano-array by cryochemistry.
Background technology
ZnO is typical direct band gap semiconductor material with wide forbidden band, energy gap at normal temperatures is 3.37eV, similar to GaN, exciton binding energy is up to 60meV, much larger than ZnSe(22meV) and GaN(25meV), ZnO has special conduction, heat conductivility simultaneously, chemical property is highly stable, material source is very abundant again, is the third generation semiconductor material that application potential is arranged very much.In recent years, along with the improvement of material growth technique, what nano zinc oxide material was studied gos deep into and development, and the preparation technology of zinc oxide nano array has obtained improving and transforming.The method of synthesizing zinc oxide nano-array has at present: vapour deposition process, solution method, electrochemical deposition method, molecular beam epitaxy etc.These methods respectively have superiority, wherein vapour deposition process comprises physical vapor deposition and chemical Vapor deposition process, this method is easy to prepare the long nano wire of length and other element growths of more easily mixing, but its temperature of reaction is higher, generally need be higher than 450 ℃, and the array controllability is relatively poor, and crystallinity is bad.Molecular beam epitaxy growth array cost is very high, can not satisfy the requirement of big area industrial preparation far away.The electrochemical deposition method temperature of reaction is lower and preparation condition is fairly simple, but the common defective of nano wire of preparation is more and mostly be multicrystal nano-wire.Solution method generally comprises two steps, at first in substrate, prepare the zinc oxide crystal seed layer, the substrate that will have crystal seed layer is then put into the encloses container that fills precursor liquid and is incubated for some time, the key of this preparation process is exactly crystal seed layer preparation and precursor liquid reaction, wherein crystal seed layer preparation method comparatively commonly used at present is respectively even glue method and magnetron sputtering method, and above-mentioned two kinds of preparation methods all need temperature of reaction more than 200 ~ 300 ℃ in the crystal seed layer preparation process.Though its preparation technology is simple, with low cost, can't satisfy the demand of present zinc oxide nano array, particularly most of organic polymer flexible substrates all can't keep steady state down at 200 ~ 300 ℃.
Summary of the invention
The object of the present invention is to provide the method for preparing zinc oxide nano array under a kind of cold condition on flexible substrates, it is simple to have synthetic method, and cost is low, the efficient height, and the quality product height is fit to many advantages such as scale operation.
This method at first adopts alternately soaking method, and at the alternately superimposed layer of substrate surface formation zinc salt and alkali, and then reaction makes the zinc oxide crystal seed layer; At a certain temperature subsequently, will there be the substrate of crystal seed layer to be placed in the alkaline aqueous solution that contains zinc salt and keep for some time, induce the growth of one-dimensional zinc oxide nanometer material by crystal seed; Finally, marshalling, the uniform zinc oxide nano array of appearance and size have been prepared.Concrete processing step is as follows:
1. zinc acetate and sodium hydroxide are dissolved in respectively in the ethanol, preparation homogeneous, stable concentration are that the ethanolic soln and the concentration of 0.1mol/L～0.5mol/L zinc acetate is the ethanolic soln of 0.5mol/L～1mol/L sodium hydroxide.These two kinds of solution are as the solution of preparation zinc oxide nano array crystal seed layer;
2. zinc nitrate and the hexamethylenetetramine with equimolar amount is dissolved in the deionized water, is configured to the solution that volumetric molar concentration is 0.05mol/L, as the precursor liquid of hydro-thermal reaction;
Filter paper, polyimide flexible substrates such as (PI) is ultrasonic in deionized water, acetone, ethanol, Virahol successively 3., cleaned 8-15 minute, and in 50-70 ℃ of dry for standby;
4. the substrate after step 3 being cleaned is soaked in the zinc acetate ethanolic soln of step 1 configuration, fully after the infiltration evenly, at the uniform velocity, slowly proposes liquid level, places baking oven 50-70 ℃ ℃ of oven dry down;
5. the substrate after step 4 being handled is soaked in the sodium hydroxide ethanolic soln of step 1 configuration, fully after the infiltration evenly, at the uniform velocity, slowly proposes liquid level, places baking oven 50-70 ℃ ℃ of oven dry down;
6. the substrate surface after step 4 is handled evenly drips micro-deionized water, places baking oven 95～100 ℃ of oven dry down;
7. repeat for several times according to step 3-step 6 successively;
8. the substrate after step 7 being handled is immersed in downwards in the reaction precursor liquid, and the sealing back was 60-70 ℃ of insulation 0.5-2 hour, and postheating is incubated 8-24 hour to 90-100 ℃;
9. taking-up substrate washes surface impurity with deionized water, places baking oven 50-70 ℃ oven dry.
By the present invention, realized under low temperature (less than the 100 ℃) condition, the large-area preparation zinc oxide nano array, and technology is simple, with low cost.
Compared with prior art, the preparation method of low-temperature oxidation zinc nano-array provided by the present invention has following advantage:
1. adopt physical method that the ethanolic soln of sodium hydroxide and the ethanolic soln of zinc acetate are alternately soaked into, dry, form the alternately superimposed layer of zinc salt and alkali at substrate surface, and then making the zinc oxide crystal seed layer by solution chemistry reaction, this preparation method's condition is simple;
2. the density of the concentration of the ethanolic soln that this preparation method can be by control sodium hydroxide and zinc acetate and the number of times controlled oxidation zinc nano-array that alternately soaks into, and then realize control growing;
3. this preparation method temperature of reaction is lower, and wherein the crystal seed layer temperature of reaction is not higher than 100 ℃, and the array growth temperature is not higher than 100 ℃; Can realize the large-area zinc oxide nano material preparation down at 100 ℃, using for nano zinc oxide material provides more wide prospect;
4. this preparation method can prepare the one-dimension zinc oxide nano-array on filter paper, polyimide flexible substrates such as (PI).
Description of drawings
Fig. 1, Fig. 2, Fig. 3 are respectively under the different amplification, and adopting this preparation method is the zinc oxide array of substrate preparation with filter paper, i.e. the zinc oxide nano array of example 2 described experimental procedure preparations.Zinc oxide array evenly is grown in the filter paper surface as seen from Figure 1.As seen from Figure 2, zinc oxide array evenly coats and is grown on the fiber of filter paper.Adopt as seen from Figure 3 in the zinc oxide array of present method preparation, single nanometer rod diameter is 100 ~ 300nm, and length is 2 ~ 5 μ m.
Fig. 4 is for adopting the zinc oxide nano array of example 1 described preparation process preparation, and zinc oxide nano array evenly is grown in the filter paper surface as can be seen, and its single nanometer rod diameter is 20 ~ 50nm, and length is at 1 ~ 2 μ m.
Fig. 5 is for adopting the nano zinc oxide material of example 3 described preparation process preparations in the preparation of PI film surface, and zinc oxide nano array evenly is grown in the PI surface as can be seen, and its single nanometer rod diameter is about 100nm, and length is at 3-5 μ m.
Fig. 6 adopts high resolution transmission electron microscopy that the zinc oxide nano rod of example 2 described experimental procedure preparations is carried out the pattern sign, and wherein a figure is the pattern photo, and b figure is the selected area electron diffraction spectrum.
Embodiment
Below in conjunction with example technical scheme of the present invention is further specified:
Example 1
1. chemical pure sodium hydroxide and zinc acetate are dissolved in respectively in the ethanol, are made into the ethanolic soln that concentration is 1mol/L sodium hydroxide, concentration is the ethanolic soln of the zinc acetate of 0.1mol/L, and wherein zinc acetate solution configuration temperature is 60 ℃;
2. use common filter paper as substrate, successively in deionized water, ethanol ultrasonic cleaning each 10 minutes, 60 ℃ of dry for standby;
3. the substrate after step 2 being cleaned is soaked in the zinc acetate ethanolic soln of step 1 configuration, fully after the infiltration evenly, slowly, at the uniform velocity proposes liquid level, places 100 ℃ of baking ovens to dry;
4. the substrate after step 3 being handled is soaked in the sodium hydroxide ethanolic soln of step 1 configuration, fully after the infiltration evenly, slowly, at the uniform velocity proposes liquid level, places 100 ℃ of baking ovens to dry;
5. repeat 10 times according to step 3, step 4 successively;
6. the substrate surface byproduct after washing away step 5 and handle with deionized water obtains the one-dimension zinc oxide nano-array;
Adopt the zinc oxide nano array of this method preparation, pattern is even, and the diameter of nanometer rod is 20 ~ 50nm, and length is at 1 ~ 2 μ m, as shown in Figure 4.
Example 2
1. chemical pure zinc acetate and sodium hydroxide are dissolved in respectively in the ethanol, being made into ethanolic soln and the concentration that concentration is 0.5mol/L sodium hydroxide is the ethanolic soln of the zinc acetate of 0.1mol/L, and wherein the ethanolic soln of zinc acetate configuration temperature is 60 ℃;
2. zinc nitrate and the hexamethylenetetramine with equimolar amount is dissolved in respectively in the deionized water, is configured to the mixing solutions that volumetric molar concentration is 0.05mol/L, and as reaction precursor liquid;
3. use common filter paper as substrate, ultrasonic in ionized water, ethanol successively, cleaned each 10 minutes, last 60 ℃ of dry for standby;
4. the substrate after step 3 being cleaned is soaked in the zinc acetate ethanolic soln of step 1 configuration, fully after the infiltration evenly, slowly, at the uniform velocity proposes liquid level, places 60 ℃ of baking ovens to dry;
5. the substrate after step 4 being handled is soaked in the sodium hydroxide ethanolic soln of step 1 configuration, fully after the infiltration evenly, changes slowly, at the uniform velocity proposes liquid level, places 60 ℃ of baking ovens to dry;
6. the substrate surface after step 5 is handled evenly drips micro-deionized water, places 100 ℃ of baking ovens to dry;
7. repeat for several times according to step 4-step 6 successively;
8. the substrate after step 7 being handled is immersed in the reaction precursor liquid of step 2 configuration, and the sealing back is warmed up to 95 ℃ of insulations 12 hours subsequently 65 ℃ of insulations 1 hour;
9. take out the reacted substrate of step 8, with deionized water clean surface byproduct, 60 ℃ of dry backs obtain zinc oxide nano array;
Adopt the zinc oxide nano array pattern of present method preparation even, the diameter of nano wire is 100 ~ 300nm, and length is at 3 ~ 5 μ m, as Figure 1-3.
Example 3
1. chemical pure zinc acetate and sodium hydroxide are dissolved in the ethanol respectively and mix, the ethanolic soln and the concentration that are made into concentration and are the zinc acetate of 0.1mol/L are the ethanolic soln of 0.5mol/L sodium hydroxide;
2. zinc nitrate and the hexamethylenetetramine with equimolar amount mixes in deionized water respectively, is configured to the solution that volumetric molar concentration is 0.05mol/L.Two kinds of solution are configured as reaction precursor liquid according to 1:1;
3. use polyimide (PI) film as substrate, ultrasonic at deionized water, acetone, ethanol, Virahol successively, cleaned each 10 minutes, standby after 60 ℃ of oven dry;
4. the substrate surface after step 3 is cleaned evenly drips the zinc acetate ethanolic soln of few steps 1 configuration, places 60 ℃ of baking ovens to dry;
5. the substrate surface after step 4 is handled evenly drips the sodium hydroxide ethanolic soln of few steps 1 configuration, places 60 ℃ of baking ovens to dry;
6. the substrate surface after step 5 is handled evenly drips micro-deionized water, places 100 ℃ of baking ovens to dry.
7. repeat for several times according to step 4 and step 5 successively;
8. the substrate crystal seed after step 7 being handled faces down and is immersed in the reaction precursor liquid of step 2 configuration, seals back 95 ℃ of insulations 12 hours;
9. take out the substrate that step 8 is handled,, after 60 ℃ of dryings, obtain the one-dimension zinc oxide nano-array with deionized water clean surface byproduct;
Adopt the zinc oxide nano array pattern of present method preparation even, the diameter of nano wire is about 100nm, and length is at 3-5 μ m, as shown in Figure 5.
Claims (1)
1. on flexible substrates, prepare the method for zinc oxide nano array under the cold condition, it is characterized in that step of preparation process is:
1) be dissolved in zinc acetate and sodium hydroxide in the ethanol respectively, preparation homogeneous, stable concentration are that the ethanolic soln and the concentration of 0.1mol/L～0.5mol/L zinc acetate is the ethanolic soln of 0.5mol/L～1mol/L sodium hydroxide, and these two kinds of solution are as the solution of preparation zinc oxide nano array crystal seed layer;
2) zinc nitrate and the hexamethylenetetramine with equimolar amount is dissolved in the deionized water, is configured to the solution that volumetric molar concentration is 0.05mol/L, as the precursor liquid of hydro-thermal reaction;
3) filter paper or polyimide flexible substrates is ultrasonic in deionized water, acetone, ethanol, Virahol successively, cleaned 8-15 minute, and in 50-70 ℃ of dry for standby;
4) substrate after step 3 cleaning is soaked in the zinc acetate ethanolic soln of step 1 configuration, fully after the infiltration evenly, at the uniform velocity, slowly propose liquid level, place baking oven oven dry under 50-70 ℃;
5) substrate after step 4 processing is soaked in the sodium hydroxide ethanolic soln of step 1 configuration, fully after the infiltration evenly, at the uniform velocity, slowly propose liquid level, place baking oven oven dry under 50-70 ℃;
6) substrate surface after step 5 is handled evenly drips micro-deionized water, places baking oven 95～100 ℃ of oven dry down;
7) repeat for several times according to step 3-step 6 successively;
8) substrate after step 7 processing is immersed in downwards in the reaction precursor liquid, the sealing back was 60-70 ℃ of insulation 0.5-2 hour, and postheating is incubated 8-24 hour to 95-100 ℃;
9) substrate after taking-up step 8 is handled washes surface impurity with deionized water, places baking oven 50-70 ℃ of oven dry to obtain zinc oxide nano array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110079276 CN102181927A (en) | 2011-03-30 | 2011-03-30 | Method for preparing zinc oxide nano-array on flexible substrate at low temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110079276 CN102181927A (en) | 2011-03-30 | 2011-03-30 | Method for preparing zinc oxide nano-array on flexible substrate at low temperature |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102181927A true CN102181927A (en) | 2011-09-14 |
Family
ID=44568210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110079276 Pending CN102181927A (en) | 2011-03-30 | 2011-03-30 | Method for preparing zinc oxide nano-array on flexible substrate at low temperature |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102181927A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337581A (en) * | 2011-09-20 | 2012-02-01 | 清华大学 | Method for preparing zinc oxide crystal whisker by using recyclable solvent in low-temperature hydrothermal way |
| CN103408060A (en) * | 2013-07-23 | 2013-11-27 | 北京航空航天大学 | Method of preparing ZnO array on multi-structure polymer surface |
| CN103693675A (en) * | 2013-12-09 | 2014-04-02 | 济南大学 | Method for preparing paper-based zinc oxide (ZnO) nano-wires |
| CN104264250A (en) * | 2014-08-26 | 2015-01-07 | 上海应用技术学院 | Preparation method for conductive fibers with ZnO flower-shaped clusters on surfaces |
| CN104499267A (en) * | 2015-01-11 | 2015-04-08 | 温州泓呈祥科技有限公司 | Modified PPS fiber and preparation method of fabric of modified PPS fiber |
| CN104577043B (en) * | 2013-10-09 | 2017-04-26 | 中国石油化工股份有限公司 | Manganese oxide/zinc oxide composite hollow tubular structure and preparation method and application thereof |
| CN109594325A (en) * | 2018-12-11 | 2019-04-09 | 佛山市名洲纺织有限公司 | A kind of nanometic zinc oxide rod array it is modified lead wet cotton fiber or its fabric and preparation method thereof |
| CN110093659A (en) * | 2018-01-27 | 2019-08-06 | 苏州斯贝孚光电科技有限公司 | A kind of nano thin-film manufacture craft of seed layer induced growth method |
| CN113398970A (en) * | 2021-06-07 | 2021-09-17 | 武汉工程大学 | ZnO nanowire array/three-dimensional nitrogen-doped rGO nanotube composite material and preparation method and application thereof |
| CN114657766A (en) * | 2022-03-19 | 2022-06-24 | 郑州大学 | Antibacterial fabric based on zinc oxide nano-array and preparation method and application thereof |
| CN114901588A (en) * | 2020-01-09 | 2022-08-12 | 东丽工程株式会社 | Film with nanowires and method for producing nanowires |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101974781A (en) * | 2010-11-08 | 2011-02-16 | 上海大学 | Method for preparing ZnO nano-rod array at normal temperature and normal pressure |
-
2011
- 2011-03-30 CN CN 201110079276 patent/CN102181927A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101974781A (en) * | 2010-11-08 | 2011-02-16 | 上海大学 | Method for preparing ZnO nano-rod array at normal temperature and normal pressure |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102337581B (en) * | 2011-09-20 | 2014-05-07 | 清华大学 | Method for preparing zinc oxide crystal whisker by using recyclable solvent in low-temperature hydrothermal way |
| CN102337581A (en) * | 2011-09-20 | 2012-02-01 | 清华大学 | Method for preparing zinc oxide crystal whisker by using recyclable solvent in low-temperature hydrothermal way |
| CN103408060B (en) * | 2013-07-23 | 2015-04-15 | 北京航空航天大学 | Method of preparing ZnO array on multi-structure polymer surface |
| CN103408060A (en) * | 2013-07-23 | 2013-11-27 | 北京航空航天大学 | Method of preparing ZnO array on multi-structure polymer surface |
| CN104577043B (en) * | 2013-10-09 | 2017-04-26 | 中国石油化工股份有限公司 | Manganese oxide/zinc oxide composite hollow tubular structure and preparation method and application thereof |
| CN103693675A (en) * | 2013-12-09 | 2014-04-02 | 济南大学 | Method for preparing paper-based zinc oxide (ZnO) nano-wires |
| CN104264250A (en) * | 2014-08-26 | 2015-01-07 | 上海应用技术学院 | Preparation method for conductive fibers with ZnO flower-shaped clusters on surfaces |
| CN104499267A (en) * | 2015-01-11 | 2015-04-08 | 温州泓呈祥科技有限公司 | Modified PPS fiber and preparation method of fabric of modified PPS fiber |
| CN110093659A (en) * | 2018-01-27 | 2019-08-06 | 苏州斯贝孚光电科技有限公司 | A kind of nano thin-film manufacture craft of seed layer induced growth method |
| CN109594325A (en) * | 2018-12-11 | 2019-04-09 | 佛山市名洲纺织有限公司 | A kind of nanometic zinc oxide rod array it is modified lead wet cotton fiber or its fabric and preparation method thereof |
| CN109594325B (en) * | 2018-12-11 | 2021-07-16 | 佛山市名洲纺织有限公司 | Zinc oxide nanorod array modified moisture-conductive cotton fiber or fabric thereof and preparation method thereof |
| CN114901588A (en) * | 2020-01-09 | 2022-08-12 | 东丽工程株式会社 | Film with nanowires and method for producing nanowires |
| CN113398970A (en) * | 2021-06-07 | 2021-09-17 | 武汉工程大学 | ZnO nanowire array/three-dimensional nitrogen-doped rGO nanotube composite material and preparation method and application thereof |
| CN114657766A (en) * | 2022-03-19 | 2022-06-24 | 郑州大学 | Antibacterial fabric based on zinc oxide nano-array and preparation method and application thereof |
| CN114657766B (en) * | 2022-03-19 | 2024-01-19 | 郑州大学 | Antibacterial fabric based on zinc oxide nano array and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102181927A (en) | Method for preparing zinc oxide nano-array on flexible substrate at low temperature | |
| CN103397382B (en) | The preparation method of nanometic zinc oxide rod array film | |
| CN101976611B (en) | TiO2 nanowire array film light anode and preparation method thereof | |
| Kenanakis et al. | Growth of c-axis oriented ZnO nanowires from aqueous solution: the decisive role of a seed layer for controlling the wires’ diameter | |
| CN104264131B (en) | A kind of fibrous ZnO nano-wire of growth and preparation method thereof on ZnO nanowire array | |
| CN110473927B (en) | Cuprous oxide/cuprous thiocyanate heterojunction photoelectric film and preparation method thereof | |
| CN101122020A (en) | Preparation method for large-area nano zinc oxide directional array | |
| CN105498815A (en) | Preparation method of rod-like bismuth phosphate loaded biomass carbon aerogel material | |
| CN102747424A (en) | Method for preparing zinc oxide nano wire/pipe arrays with controllable diameters and heights on indium tin oxide (ITO) glass | |
| CN101974781A (en) | Method for preparing ZnO nano-rod array at normal temperature and normal pressure | |
| Zhao et al. | Nucleation and growth of ZnO nanorods on the ZnO-coated seed surface by solution chemical method | |
| CN102503169A (en) | Preparation method of zinc oxide/cuprous oxide heterojunction | |
| CN102153288A (en) | Method for preparing copper disulfide thin film with preferred orientation | |
| CN105244442A (en) | Thin film crystal silicon perovskite heterojunction solar cell manufacturing method | |
| CN105236472A (en) | Preparation method of SnO2 nano-wire array | |
| CN101886281A (en) | Si-ZnO one-dimensional nano material and preparation method thereof | |
| CN104022189B (en) | A kind of method preparing ZnO/ZnS composite photoelectric film | |
| CN102509648A (en) | Preparation method for Ga-doped ZnO nanometer material | |
| CN101844876A (en) | Preparation method of zinc oxide nanometer wafer array with large area and high orientation | |
| CN102061498B (en) | Preparation method of injector-shaped ZnO nanostructural array for field emission | |
| CN103011256B (en) | Method for preparing zinc oxide nanorod arrays in extra-large area | |
| CN103194784B (en) | A kind of method taking colloid as template controllable electric deposition and prepare nano-ZnO thin film | |
| CN102912333B (en) | Method for preparing thermoelectric film by using layer by layer self-assembly | |
| CN102557110B (en) | Preparation method of ZnO nanorod array in low-temperature steam | |
| CN102992392B (en) | Preparation method of strontium-titanate hollow nanorod array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110914 |