CN102176095B - Film transistor substrate of liquid crystal display (LCD) panel - Google Patents
Film transistor substrate of liquid crystal display (LCD) panel Download PDFInfo
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- CN102176095B CN102176095B CN201110044601.9A CN201110044601A CN102176095B CN 102176095 B CN102176095 B CN 102176095B CN 201110044601 A CN201110044601 A CN 201110044601A CN 102176095 B CN102176095 B CN 102176095B
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Abstract
The invention discloses a film transistor substrate of a liquid crystal display (LCD) panel, and the film transistor substrate comprises a substrate, a plurality of scanning lines arranged on the substrate along a first direction, a plurality of data lines arranged on the substrate along a second direction. The data lines and the scanning lines define a plurality of pixel regions, and the scanning lines respectively comprise a plurality of first concave-convex parts; and furthermore, the film transistor substrate of the LCD panel further comprises a plurality of switch assemblies respectively arranged in the pixel regions.
Description
Technical field
The invention relates to a kind of display panels (liquid crystal display panel, LCD panel) thin film transistor base plate (thin film transistor, TFT substrate), particularly relevant for a kind of fringe field, switch the thin film transistor base plate of the display panels of (fringe field switching, is designated hereinafter simply as FSS) type.
Background technology
Display panels is to utilize backlight module (backlight module) to provide the area source being evenly distributed to carry out show image.Generally speaking, by the wide mostly of display panels outgoing, be towards dead ahead, that is perpendicular to the frontal of the display surface of display panels.Therefore, when user views and admires from the angle of side-looking, cannot watch the picture with normal brightness, or even cannot watch the picture wanting to view and admire.In view of this, known technology is to develop multiple wide viewing angle technology (wide viewing angle technology), for example FFS type LCD plate technique.
Refer to Fig. 1, Fig. 1 is the schematic cross-section of a known FFS type display panels.Known FFS type display panels 100 comprises a upper substrate 102, an infrabasal plate 104 and is arranged at the liquid crystal layer 106 between upper substrate 102 and infrabasal plate 104.Liquid crystal layer 106 includes a plurality of liquid crystal molecule 106a.In addition, upper substrate 102 is in the face of the surface of liquid crystal layer 106, and the surface that infrabasal plate 104 is faced liquid crystal layer 106 is respectively arranged with a both alignment layers (not shown).On infrabasal plate 104, be from bottom to top also sequentially provided with a common electrode 120, an insulation course 122, with a pixel electrode 124.Known FFS type display panels 100 is to utilize common electrode 120 and pixel electrode 124 to form intensive fringe field, to drive liquid crystal molecule 106a, to adjust the transmitance of light, and make the response speed of liquid crystal molecule 106a faster, visual angle is wider.
Refer to Fig. 2 A and Fig. 2 B, wherein Fig. 2 A is the schematic diagram in known FFS type display panels 100 partial pixel districts; Fig. 2 B is the schematic cross-section for illustrating along A-A ' hatching line in Fig. 2 A.As shown in Fig. 2 A and Fig. 2 B, the infrabasal plate 104 of known FFS type display panels 100 also comprises a plurality of data lines (data line) 130, a plurality of sweep traces (scan line) 132 and a plurality of storage electrode lines (storage electrode line) 134, and data line 130 defines a plurality of pixel regions 108 with sweep trace 132.In each pixel region 108, be to be provided with at least one thin film transistor (TFT) 110, wherein the grid (not shown) of thin film transistor (TFT) 110 is to be to be electrically connected drain electrode (not shown) with data line 130 to be electrically connected with a pixel electrode 124 with sweep trace 132 electric connections, source electrode (not shown).
Please continue to refer to Fig. 2 A and Fig. 2 B.In order to increase environment reflection of light, known FFS type display panels 100 also often defines a plurality of echo areas 140 in the both sides of sweep trace 132, and utilize the patterning process of the semiconductor layer of known thin film transistor (TFT), a plurality of reflection subassemblies that formed by semiconductor layer 142 of 140 interior formation in echo area.Utilize subsequently the reflection horizon 144 of the patterning process interior formation one covering reflection subassembly 142 in each echo area 140 that forms source/drain.And to be reflection subassemblies 142 because of its lower convexity obtain a rough surface profile in the reflection horizon 144 that covers reflection subassembly 142, so reflection horizon 144 can provide scattering interface of surround lighting of incident, then improves the reflectivity of surround lighting.Certainly, for fear of reflection horizon, 144 are electrically connected with pixel electrode 124, are to be provided with an insulation course 138 between reflection horizon 144 and pixel electrode 124.
And in order to increase the reflectivity of surround lighting, even reaching in the sun still visual degree, known technology is constantly to increase echo area 140 areas, but has just sacrificed thus the aperture opening ratio of FFS type display panels 100.
Summary of the invention
Therefore, the present invention provides a kind of in this and promotes effective reflectivity and do not sacrifice the thin film transistor base plate of the FFS type display panels of aperture opening ratio.
According to claim scope provided by the present invention, be to provide a kind of thin film transistor base plate of display panels, include a substrate, a plurality of along a first direction be arranged at sweep trace on this substrate, a plurality of are arranged at the data line on this substrate along a second direction, these data lines and these sweep traces are to define a plurality of pixel regions.These sweep traces comprise respectively a plurality of the first jogs, and these first jogs comprise respectively a plurality of the first close-shaped recess patterns that have.The thin film transistor base plate of this display panels also comprises a plurality of switch modules in addition, is arranged at respectively in these pixel regions.
According to claim scope provided by the present invention, a kind of thin film transistor base plate of display panels is also provided, include a substrate, a plurality of along a first direction be arranged at sweep trace on this substrate, a plurality of are arranged at the data line on this substrate along a second direction, these data lines and these sweep traces are to define a plurality of pixel regions.These data lines also comprise respectively a plurality of the first jogs and a plurality of the first par, and these first jogs comprise respectively a plurality of the first close-shaped recess patterns that have.The thin film transistor base plate of this display panels also comprises a plurality of switch modules in addition, is arranged at respectively in these pixel regions.
According to claim scope provided by the present invention, a kind of thin film transistor base plate of display panels is also provided, include a substrate, a plurality of along a first direction be arranged at sweep trace on this substrate, a plurality of are arranged at data line on this substrate, along this first direction, are arranged at the storage electrode line on this substrate respectively with a plurality of along a second direction.These data lines and these sweep traces are to define a plurality of pixel regions, and these storage electrode lines comprise respectively one first jog, and this first jog comprises a plurality of the first close-shaped recess patterns that have.The thin film transistor base plate of this display panels also comprises a plurality of switch modules in addition, is arranged at respectively in these pixel regions.
The thin film transistor base plate of display panels of the present invention, is, in each sweep trace, each data line or each storage electrode, a plurality of jogs are directly set online, and each jog comprises respectively and has close-shaped recess patterns.Therefore, can reduce under the prerequisite of aperture opening ratio not needing additionally echo area to be set, make each sweep trace, each data line or each storage electrode line itself possess the ability of reflection ray, therefore can significantly promote the reflectivity of thin film transistor base plate.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of a known FFS type display panels;
Fig. 2 A is the schematic diagram in known FFS type display panels partial pixel district;
Fig. 2 B is the schematic cross-section for illustrating along A-A ' transversal in Fig. 2 A;
The part schematic diagram of the thin film transistor base plate of the display panels that Fig. 3 A provides for this preferred embodiment;
Fig. 3 B is the schematic cross-section illustrating along B-B ' hatching line in Fig. 3 A;
Fig. 3 C is the schematic cross-section illustrating along C-C ' hatching line in Fig. 3 A; And
Fig. 3 D is the schematic cross-section illustrating along D-D ' hatching line in Fig. 3 A.
embodiment
In the middle of instructions and aforesaid claim scope, used some vocabulary to censure specific assembly.Person with usual knowledge in their respective areas should understand, and same assembly may be called with different nouns by manufacturer.This instructions and aforesaid claim scope are not used as distinguishing the mode of assembly with the difference of title, but the difference in function is used as the benchmark of distinguishing with assembly.In the whole text, in the middle of instructions and aforesaid claim, be an open term mentioned " comprising ", therefore should be construed to " comprise but be not limited to ".In addition, " electric connection " word is comprise directly any and be indirectly electrically connected means at this.Therefore, if describe a first device in literary composition, be electrically connected at one second device, represent that this first device can be directly connected in this second device, or be indirectly connected to this second device through other device or connection means.
Refer to Fig. 3 A to Fig. 3 C, wherein Fig. 3 A is that part schematic diagram, Fig. 3 B of the thin film transistor base plate of a display panels of the present invention are that schematic cross-section, Fig. 3 C illustrating along B-B ' hatching line in Fig. 3 A is that schematic cross-section, Fig. 3 D illustrating along C-C ' hatching line in Fig. 3 A is the schematic cross-section illustrating along D-D ' hatching line in Fig. 3 A.First refer to Fig. 3 A.In this preferred embodiment, the thin film transistor base plate of display panels can be the thin film transistor base plate 200 that a fringe field switches (FFS) type display panels, but not as limit.Thin film transistor base plate 200 comprises a substrate 202, a plurality of sweep traces 204 and is arranged on substrate 202 and a plurality of data lines 206 are arranged on substrate 202 along a second direction D2 along a first direction D1, and wherein first direction D1 is substantially perpendicular to second direction D2.As shown in Figure 3A, sweep trace 204 defines a plurality of pixel regions 208 with data line 206.The thin film transistor base plate 200 of this preferred embodiment also comprises a plurality of switch modules 210, and for example thin film transistor (TFT), is arranged at respectively in each pixel region 208.In addition thin film transistor base plate 200 still comprises a plurality of storage electrode lines 212, is arranged on substrate 202 respectively along first direction D1.
Refer to Fig. 3 A and Fig. 3 B.As previously mentioned, the thin film transistor base plate 200 providing due to this preferred embodiment is the thin film transistor base plate of fringe field switch type liquid crystal display panel, so the thin film transistor base plate 200 of this preferred embodiment also comprises in each pixel region 208 that a plurality of common electrodes 214 are arranged at respectively substrate 202.Thin film transistor base plate 200 also comprises plurality of pixel electrodes 216, is arranged at respectively in each pixel region 208 of substrate 202.As shown in Figure 3A, wherein each pixel electrode 216 has a plurality of gaps (slit) 218, and each pixel electrode 216 is to overlap with corresponding common electrode 214 parts.In this preferred embodiment, common electrode 214 is to form intensive fringe field with pixel electrode 216, with fringe field drive display panels 200 liquid crystal molecule (not shown), adjust the transmitance of light, and make the response speed of liquid crystal molecule faster, visual angle is wider.
Please continue to refer to Fig. 3 A and Fig. 3 B.It should be noted that each sweep trace 204 on the thin film transistor base plate 200 that this preferred embodiment provides comprises respectively a plurality of the first jog 204a, each storage electrode line 212 comprises one the 3rd jog 212a.In this field, tool knows that the knowledgeable should know conventionally, is mostly by five road patterning process, to complete the making of switch module 210, sweep trace 204, storage electrode line 212, data line 206 and pixel electrode 216 etc. on thin film transistor base plate 200.And in this preferred embodiment, be in making the grid of switch module 210 and the first patterning process of sweep trace 204, to adopt a semi-transparency type light shield (half-tone mask) (not shown).Semi-transparency type light shield is to comprise a semi-transparency type light shield region (half-tone mask region), a full-transparency type light shield region (fully transparent region) and a full shielded type light shield region (fully blocked region).As person known to the personage of the common knowledge of tool in this field, full-transparency type light shield region is to have all-or-nothing relativeness with the mask pattern that is transferred to photoresistance with full shielded type light shield region, after coordinating suitable etch process, be on substrate 202, to form above-mentioned sweep trace 204 and grid.The more important thing is, because this preferred embodiment adopts semi-transparency type light shield, its semi-transparency type light shield region has been to provide different penetrabilitys, therefore via the formed photoresistance of micro-photographing process, be to have different thickness with exposure, and after above-mentioned etch process, on each sweep trace 204, be to form a plurality of the first close-shaped recess patterns 250 that have.For instance, the first recess patterns 250 can be circular as shown in Figure 3A, but this preferred embodiment is also not limited to form other close-shaped as polygonal the first recess patterns 250.Due to the existence of the first recess patterns 250, sweep trace 204 can be considered and comprised a plurality of first jog 204a with uneven surface with grid.
The thin film transistor base plate 200 providing according to this preferred embodiment is to utilize micro-shadow technology of semi-transparency type light shield on sweep trace 204, directly to form a plurality of the first jog 204a.And other film material of follow-up formation, as insulation course 220,224 etc., is to obtain convex-concave surface as shown in Figure 3 B along the first jog 204a, this convex-concave surface can provide the surround lighting one scattering interface of incident, and then promotes reflecting effect.The thin film transistor base plate 200 of the FFS type display panels that in other words, this preferred embodiment provides is to provide a sweep trace 204 itself with high reflectance.
It should be noted that in addition, because storage electrode line 212 is to form in first patterning process with sweep trace 204 simultaneously, therefore also can by semi-transparency type light shield, on storage electrode line 212, form as the first recess patterns 250 on sweep trace 204, in other words storage electrode line 212 is to comprise one the 3rd jog 212a.And other film material of follow-up formation is to obtain convex-concave surface as shown in Figure 3 B along the 3rd jog 212a, and this convex-concave surface can be promoted reflecting effect as mentioned above.Therefore the thin film transistor base plate 200 that, this preferred embodiment provides also provides a storage electrode line 212 itself with high reflectance.
In addition as previously mentioned, because semi-transparency type light shield also comprises full-transparency type light shield region or full shielded type light shield region, therefore this preferred embodiment can form a plurality of first par 204b with flat surfaces as shown in Figure 3 C when forming sweep trace 204, and each first par 204b is respectively as the grid of a switch module 210.Because grid has flat surfaces, therefore more can not affect the electrical performance of thin film transistor (TFT).
Refer to Fig. 3 A and Fig. 3 D.As tool in this field is known known to the knowledgeable conventionally, after completing the making of grid/sweep trace 204, be sequentially to form gate insulator, form semiconductor layer 222 and form the steps such as source/drain and data line 206.And when making the 3rd patterning process of source/drain and data line 206, also can adopt semi-transparency type light shield and micro-shadow technology on data line 206, to form a plurality of the second jog 206a and a plurality of the second par 206b.As previously mentioned, because this preferred embodiment adopts semi-transparency type light shield, its semi-transparency type light shield region has been to provide different penetrabilitys, therefore via the formed photoresistance of micro-photographing process, be to have different thickness with exposure, and after etch process, on each data line 206, be to form a plurality of the second close-shaped recess patterns 260 that have.For instance, the second recess patterns 260 can be circular as shown in Figure 3A, but this preferred embodiment is also not limited to form other close-shaped as polygonal the second recess patterns 260.Due to the existence of the second recess patterns 260, data line 206 can be considered and comprised a plurality of second jog 206a with uneven surface.And after completing the making of source drain and data line 206, be can sequentially form insulation course 224, form contact hole and form the steps such as pixel electrode 216.
In addition, utilize full-transparency type light shield region or the full shielded type light shield region of semi-transparency type light shield, this preferred embodiment is on data line 206, to form a plurality of second par 206b with flat surfaces as shown in Figure 3 D, and each second par 206b is respectively as the source/drain of a switch module 210.Because source/drain has flat surfaces, therefore more can not affect the electrical performance of thin film transistor (TFT).
The thin film transistor base plate 200 providing according to this preferred embodiment, to utilize micro-shadow technology of semi-transparency type light shield on data line 206, directly to form a plurality of the second jog 206a, and other film material of follow-up formation, as insulation course 224 etc., be to obtain convex-concave surface as shown in Figure 3 D along the second jog 206a, this convex-concave surface can be promoted reflecting effect.The thin film transistor base plate 200 of the FFS display panels that in other words, this preferred embodiment provides is to provide a data line 206 itself with high reflectance.
In sum, the thin film transistor base plate of FFS type display panels provided by the present invention,, in each sweep trace or/and online data, a plurality of jogs that consist of recess patterns are directly set, and this jog is to form a convex-concave surface with the rete of follow-up formation, in order to the surround lighting one scattering interface of incident to be provided.Therefore, the present invention can reduce under the prerequisite of aperture opening ratio no longer needing additionally echo area to be set, and significantly promotes the reflectivity of thin film transistor base plate.
The foregoing is only preferred embodiment of the present invention, all equalizations of doing according to the claims in the present invention scope change and modify, and all should belong to covering scope of the present invention.
Claims (21)
1. a thin film transistor base plate for display panels, is characterized in that, includes:
One substrate;
A plurality of sweep traces, are arranged on this substrate along a first direction, and these sweep traces comprise respectively a plurality of the first jogs, and these first jogs comprise respectively a plurality of the first close-shaped recess patterns that have;
A plurality of data lines, are arranged on this substrate along a second direction, and these data lines and these sweep traces are to define a plurality of pixel regions; And
A plurality of switch modules, are arranged at respectively in these pixel regions;
A plurality of storage electrode lines, are arranged on this substrate along this first direction respectively; And these storage electrode lines comprise respectively one the 3rd jog.
2. the thin film transistor base plate of display panels as claimed in claim 1, is characterized in that, these sweep traces also comprise respectively a plurality of the first pars.
3. the thin film transistor base plate of display panels as claimed in claim 2, is characterized in that, these first pars are respectively as a grid of these switch modules.
4. the thin film transistor base plate of display panels as claimed in claim 1, is characterized in that, these data lines also comprise respectively a plurality of the second jogs and a plurality of the second par.
5. the thin film transistor base plate of display panels as claimed in claim 4, is characterized in that, these second jogs are to comprise a plurality of the second close-shaped recess patterns that have.
6. the thin film transistor base plate of display panels as claimed in claim 4, is characterized in that, these second pars are respectively as the source/drain electrode of these switch modules.
7. the thin film transistor base plate of display panels as claimed in claim 1, is characterized in that, the thin film transistor base plate of this display panels is the thin film transistor base plate of a fringe field switch type liquid crystal display panel.
8. the thin film transistor base plate of display panels as claimed in claim 7, it is characterized in that, also comprise in respectively this pixel region that a plurality of common electrodes are arranged at respectively this substrate, and plurality of pixel electrodes is arranged at respectively in respectively this pixel region of this substrate, wherein respectively this pixel electrode has a plurality of gaps (slit), and respectively this pixel electrode is partly to overlap with corresponding respectively this common electrode.
9. a thin film transistor base plate for display panels, is characterized in that, includes:
One substrate;
A plurality of sweep traces, are arranged on this substrate along a first direction;
A plurality of data lines, along a second direction, be arranged on this substrate, these data lines and these sweep traces are to define a plurality of pixel regions, these data lines also comprise respectively a plurality of the first jogs and a plurality of the first par, and these first jogs comprise respectively a plurality of the first close-shaped recess patterns that have; And
A plurality of switch modules, are arranged at respectively in these pixel regions;
A plurality of storage electrode lines, are arranged on this substrate along this first direction respectively; And these storage electrode lines comprise respectively one the 3rd jog.
10. the thin film transistor base plate of display panels as claimed in claim 9, it is characterized in that, these sweep traces also comprise respectively a plurality of the second pars and a plurality of the second jog, and these second jogs are to comprise a plurality of the second close-shaped recess patterns that have.
The thin film transistor base plate of 11. display panels as claimed in claim 10, is characterized in that, these second pars are respectively as a grid of these switch modules.
The thin film transistor base plate of 12. display panels as claimed in claim 9, is characterized in that, these first pars are respectively as the source/drain electrode of these switch modules.
The thin film transistor base plate of 13. display panels as claimed in claim 9, is characterized in that, the thin film transistor base plate of this display panels is the thin film transistor base plate of a fringe field switch type liquid crystal display panel.
The thin film transistor base plate of 14. display panels as claimed in claim 13, it is characterized in that, also comprise in respectively this pixel region that a plurality of common electrodes are arranged at respectively this substrate, and plurality of pixel electrodes is arranged at respectively in respectively this pixel region of this substrate, wherein respectively this pixel electrode has a plurality of gaps, and respectively this pixel electrode is partly to overlap with corresponding respectively this common electrode.
The thin film transistor base plate of 15. 1 kinds of display panels, is characterized in that, includes:
One substrate;
A plurality of sweep traces, are arranged on this substrate along a first direction;
A plurality of data lines, are arranged on this substrate along a second direction, and these data lines and these sweep traces are to define a plurality of pixel regions;
A plurality of storage electrode lines, are arranged on this substrate along this first direction respectively, and these storage electrode lines comprise respectively one first jog, and this first jog comprises a plurality of the first close-shaped recess patterns that have; And
A plurality of switch modules, are arranged at respectively in these pixel regions.
The thin film transistor base plate of 16. display panels as claimed in claim 15, it is characterized in that, these sweep traces also comprise respectively a plurality of the second pars and a plurality of the second jog, and these second jogs comprise respectively a plurality of the second close-shaped recess patterns that have.
The thin film transistor base plate of 17. display panels as claimed in claim 16, is characterized in that, these second pars are respectively as a grid of these switch modules.
The thin film transistor base plate of 18. display panels as claimed in claim 15, it is characterized in that, these data lines also comprise respectively a plurality of the 3rd jogs and a plurality of the 3rd par, and these grade in an imperial examination three jogs are to comprise a plurality of the 3rd close-shaped recess patterns that have.
The thin film transistor base plate of 19. display panels as claimed in claim 18, is characterized in that, these grade in an imperial examination three pars are respectively as the source/drain electrode of these switch modules.
The thin film transistor base plate of 20. display panels as claimed in claim 15, is characterized in that, the thin film transistor base plate of this display panels is the thin film transistor base plate of a fringe field switch type liquid crystal display panel.
The thin film transistor base plate of 21. display panels as claimed in claim 20, it is characterized in that, also comprise in respectively this pixel region that a plurality of common electrodes are arranged at respectively this substrate, and plurality of pixel electrodes is arranged at respectively in respectively this pixel region of this substrate, wherein respectively this pixel electrode has a plurality of gaps, and respectively this pixel electrode is partly to overlap with corresponding respectively this common electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110044601.9A CN102176095B (en) | 2011-02-24 | 2011-02-24 | Film transistor substrate of liquid crystal display (LCD) panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110044601.9A CN102176095B (en) | 2011-02-24 | 2011-02-24 | Film transistor substrate of liquid crystal display (LCD) panel |
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| CN102176095A CN102176095A (en) | 2011-09-07 |
| CN102176095B true CN102176095B (en) | 2014-04-02 |
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| CN201110044601.9A Expired - Fee Related CN102176095B (en) | 2011-02-24 | 2011-02-24 | Film transistor substrate of liquid crystal display (LCD) panel |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106707635A (en) | 2017-03-20 | 2017-05-24 | 深圳市华星光电技术有限公司 | Array substrate, method for manufacturing same, liquid crystal display panel and liquid crystal display |
| CN110780500A (en) * | 2019-11-15 | 2020-02-11 | 京东方科技集团股份有限公司 | Array substrate, light control panel and display device |
| CN111769148B (en) * | 2020-06-30 | 2022-09-13 | 武汉天马微电子有限公司 | Display panel and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474219A (en) * | 2002-07-22 | 2004-02-11 | 精工爱普生株式会社 | Active matrix substrate, photoelectric device and electronic device |
| CN1499468A (en) * | 2002-10-31 | 2004-05-26 | ������������ʽ���� | Electrooptical device and electronic appliance |
| CN101634788A (en) * | 2003-06-27 | 2010-01-27 | 三星电子株式会社 | Tft display for reducing contact resistance of a contact portion by designing a contact hole or a boundary line in a petal or convex-concave shape |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1474219A (en) * | 2002-07-22 | 2004-02-11 | 精工爱普生株式会社 | Active matrix substrate, photoelectric device and electronic device |
| CN1499468A (en) * | 2002-10-31 | 2004-05-26 | ������������ʽ���� | Electrooptical device and electronic appliance |
| CN101634788A (en) * | 2003-06-27 | 2010-01-27 | 三星电子株式会社 | Tft display for reducing contact resistance of a contact portion by designing a contact hole or a boundary line in a petal or convex-concave shape |
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