CN102175380B - Method for measuring pressure of gas film of gas bearing - Google Patents

Method for measuring pressure of gas film of gas bearing Download PDF

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Publication number
CN102175380B
CN102175380B CN201110048065XA CN201110048065A CN102175380B CN 102175380 B CN102175380 B CN 102175380B CN 201110048065X A CN201110048065X A CN 201110048065XA CN 201110048065 A CN201110048065 A CN 201110048065A CN 102175380 B CN102175380 B CN 102175380B
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gas
testing
atm
gas pressure
gaseous tension
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CN102175380A (en
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徐甲强
曾垂义
陈俊琛
陈学东
向阳
郭文莎
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Huazhong University of Science and Technology
University of Shanghai for Science and Technology
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Huazhong University of Science and Technology
University of Shanghai for Science and Technology
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Abstract

The invention relates to a method for measuring the planar gas pressure of a gas film of a gas bearing. A method for preparing an element comprises the following steps of: putting SnO2 and Al2O3 into an agate mortar in the volume ratio of (80-90):(20-10); dripping deionized water until the mixture becomes paste; coating the paste on the surface of an alumina heating sheet; drying and putting the alumina heating sheet into a muffle furnace for calcining; welding; and ageing. A method for testing the dynamic gas pressure of a prepared Al2O3 SnO2-doped gas sensitive element comprises the following steps of: spraying air in an air bottle onto the Al2O3 SnO2-doped gas sensitive element according to different flow speeds or pressures by using a flow meter and a gas pressure meter respectively; testing at the pressures of 7atm, 6atm, 5atm, 4atm, 3atm, 2atm, 1atm and 0.5atm to obtain a corresponding response curve diagram, wherein the tested gas pressure is a constant pressure of a testing point; during measurement, testing every small gas pressure and finally determining other pressures of every point on a plane; and testing by using a grid sensitive element to measure the gas pressure of each position of the entire plane. The testing method plays a relevant guidance role in measuring the gas pressure distribution of the entire plane, and can be widely applied to relevant testing.

Description

A kind of method that is used for the measurement of gas bearing gas film pressure
Technical field
The present invention relates to a kind of tonometric method of gas bearing air film flat gas that is used for, belong to a kind of commercial Application application testing method widely.
Background technology
Along with science and technology development, to gaseous tension accurately, monitoring in real time become current industrial, field urgent problem such as civilian.Pressure transducer has played a part very important in the precision measurement of numerous areas such as space flight, aviation, national defence scientific research, the energy, traffic, chemical metallurgy, environmental protection and material, automatic control.
Development through over half a century has produced miscellaneous gas pressure sensor, like resistor-type, capacitor type, inductive type, mode of resonance and piezo-electric type.Growing along with science and technology; Under the situation of IT and the leading current industry trends of IC; Gas pressure sensor has been proposed wide-range (5 one magnitude), high precision, microminiaturization and integrated requirement, and these characteristics all are that traditional in the past gas pressure sensor is not available.In addition, the pressure limit of pressure transducer in the past is mostly at 1 below the standard atmospheric pressure, and is to be in static gas, and industrial requirements is likely the pressure of the gas that requires to measure high pressure, high flow rate.To the present research situation and the demand of industrial applications; The present invention relates to a kind of novel being used to and measure the method for testing of high pressure, high flow rate gaseous tension, be expected to be applied to the gaseous tension test heterogeneous of industrial circle mesohigh, high flow rate and pressure size.
Summary of the invention
The purpose of this invention is to provide a kind of tonometric method of testing of gas bearing air film flat gas that is used for.The present invention realizes through following technological means.
Raw material preparing:
A. SnO 2Preparation: get the SnCl that mass ratio is 2:6:1 4, urea and (NH 4) 2SO 4Be dissolved in the 15mL deionized water, stirred 3 hours, add 10mL ethanol, continue to stir 30 minutes, move into agitated reactor, reaction is 24 hours under 100 ℃ of temperature.Must precipitate reactant liquor is centrifugal, 70 ℃ of dry precursors, 500 ℃ of muffle furnaces calcinings 2 hours, the agate mortar porphyrize gets product.Prepared SnO 2TEM figure show (Fig. 1), formed mesoporous SnO 2, its size is between 10-20nm.
B. Al 2O 3Preparation: the preparation 1mol/L AlCl 3Solution 100mL adds 1gPE6800 (polyvinylether-polypropylene ether-polyvinylether), and 40 ℃ of water-bath magnetic agitation drip 1mol/L ammoniacal liquor to supersaturation, continue reaction 3 hours, and centrifugal, washing precipitation is to there not being Cl -, 80 ℃ of dry precursors that get, 500 ℃ of muffle furnaces were calcined 2 hours, and the agate mortar porphyrize gets product.Prepared Al 2O 3TEM figure show (Fig. 2), formed mesoporous Al 2O 3, the even size distribution in its aperture.
C. the preparation of element: SnO takes a morsel 2Matrix material and a small amount of Al 2O 3Catalysis material is that 80～90:20～10 place agate mortar by volume; Drip deionized water and transfer to pasty state, be applied to aluminium oxide heating plate surface, drying is placed on 500 ℃ of muffle furnace calcinings 4 hours; Welding; On agingtable, wore out 7 days, be assembled into air-sensitive test component (Fig. 3 a, Fig. 3 b, Fig. 3 c), carry out the flowing gas pressure test again.
Al with above-mentioned preparation 2O 3Doping SnO 2Gas sensor is used for the test of dynamic gas pressure, and step is following:
A. gas detection: the air in the high pressure air bottle through flowmeter and gas gauge, is sprayed onto Al by different flow rate or pressure respectively 2O 3Doping SnO 2Gas sensor on; The heating voltage of gas tester is 5V; Loop voltage is 10V, and the distance setting of wireway nozzle and element is 2mm, and pressing force is tested from 7atm, 6 atm, 5 atm, 4 atm, 3 atm, 2 atm, 1 atm, 0.5 atm; Draw its corresponding response curve map (Fig. 6, Fig. 7), visible it responds resume speed obviously faster than the response resume speed when 2 atm during test under 4 atm.
B. can test the particular constant pressure in narrow and small zone earlier to the pressure of gas, concrete grammar is to press the method for making of gas sensor; Be made into the even spraying sensitive element of 2cm*2cm shape, through setting gaseous tension 2atm, air derived by guide hole again; And then pore is mobile from left to right, move 1mm, the corresponding response of record recovery curve at every turn; After testing, can draw when whenever moving 1mm, be shaped as the square region gaseous tension experimental data of 1mm*20mm.Again guide rail unitary rotation 90 degree; By method noted earlier, obtain the experimental data that is shaped as 20mm*1mm from front to back, again data are handled; Can draw the gaseous tension situation of each 1mm*1mm small area, thereby the gaseous tension that can draw whole plane distributes.Test design figure is shown in figure (4), and pore limit from left to right moves, and tests out its sensitive signal.
C. to the uneven problem of whole plane flowing gas pressure size that needs to measure, be made into grid profile gas sensor and test, each small components is of a size of 3mm*3mm; Designed 49 sensitive elements altogether altogether, method of operating is: open circuit, switch is open-minded simultaneously with the B4 row when A3 is capable; And the contactor of other ranks is when breaking off; This moment, the data surveyed were (A3, B4) data of the gaseous tension that receives of coordinate place, method successively; The gas pressure data of 49 sensitive elements can be tested out, thereby the gaseous tension distribution situation on whole plane can be measured.The sensitive element floor plan is shown in figure (5).
The experiment innovative point:
? Traditional experiment Innovative experiment
Pressure < 1 atmospheric pressure 1-6 atmospheric pressure
Gaseous state Static Mobile, high flow rate
Gas concentration Low Higher relatively
Characteristics of the present invention are:
A. can be used to measure the pressure of high flow rate, high pressure motion gas.
B. through ingenious design, can measure the gaseous tension of each small size point, the design of correlation test is had certain directiveness with large-sized sensitive element.
C. can make grid profile sensitive element group, be used for the uneven test of whole flat gas pressure, test out the pressure of each point.
This method of testing has relevant directiveness for the gas pressure distribution of measuring whole plane, can be widely used in relevant test.
Description of drawings
Fig. 1 is mesoporous SnO 2TEM figure.
Fig. 2 is a porous Al 2O 3TEM figure.
Fig. 3 is the gas sensor device figure that is used to test, and (a) is the front elevation of the gas sensor that is used to test, (b) is the dimensional drawing of the gas sensor parts that are used to test; (c) be the outboard profile of the gas sensor that is used to test;
Fig. 4 is to the more specific gaseous tension test pattern that carries out on the plane;
Fig. 5 is a grid type gas sensor distribution plan during to whole flat gas pressure test;
Fig. 6 Al 2O 3Doping SnO 2The response recovery curve of gas sensor when 2atm;
Fig. 7 Al 2O 3Doping SnO 2The response recovery curve of gas sensor when 4atm.
Embodiment
After existing instance with this method test specifically is described in.
Embodiment 1
Present embodiment the proportioning of sensitive element be SnO 2With Al 2O 3Volume ratio be 99:1, specifically prepare process and step is following: the mesoporous SnO of preparation earlier 2, get the SnCl that mass ratio is 2:6:1 4, urea and (NH 4) 2SO 4Be dissolved in the 15mL deionized water, stirred 3 hours, add 10mL ethanol, continue to stir 30 minutes, move into agitated reactor, reaction is 24 hours under 100 ℃ of temperature.Must precipitate reactant liquor is centrifugal, 70 ℃ of dry precursors, 500 ℃ of muffle furnaces calcinings 2 hours, the agate mortar porphyrize gets product.Prepare porous Al again 2O 3, the AlCl of preparation 1mol/L 3Solution 100mL adds 1gPE6800, and 40 ℃ of water-bath magnetic agitation drip 1mol/L ammoniacal liquor to supersaturation, continue reaction 3 hours, and centrifugal, washing precipitation is to there not being Cl -, 80 ℃ of dry precursors that get, 500 ℃ of muffle furnaces were calcined 2 hours, and the agate mortar porphyrize gets product.Prepare gas sensor at last, SnO takes a morsel 2Matrix material and a small amount of Al 2O 3Catalysis material places agate mortar for 99:1 by volume, drips deionized water and transfers to pasty state, is applied to aluminium oxide heating plate surface, and drying is placed on 500 ℃ of muffle furnace calcinings 4 hours, and welding was worn out 7 days on agingtable, carried out the flowing gas pressure test again.
Al with preparation 2O 3Doping SnO 2Gas sensor is used for the test of dynamic gas pressure.Earlier a sensitive element is carried out the test of constant pressure, test its response under each constant pressure when 1atm-7atm, can get the curve map under each response pressure, after anatomizing, find that each curve exists significant difference.
Again the gaseous tension on whole plane is tested, measured the response of every bit respectively, thereby draw the gaseous tension distribution plan on whole plane.
Air in the air bottle through flowmeter and gas gauge, is sprayed onto Al by different flow rate or pressure respectively 2O 3Doping SnO 2Gas sensor on, the heating voltage of gas tester is 5V, loop voltage is 10V.The distance setting of wireway nozzle and element is 2mm, and pressing force is that 7atm, 6 atm, 5 atm, 4 atm, 3 atm, 2 atm, 1 atm, 0.5 atm test, and draws its corresponding response curve map (Fig. 6, Fig. 7).
Can test the particular constant pressure in narrow and small zone earlier to the pressure of gas, concrete grammar is to press the method for making of gas sensor; Be made into the even spraying sensitive element of 2cm*2cm shape, through setting gaseous tension 2atm, air derived by guide hole again; And then pore is mobile from left to right, move 1mm, the corresponding response of record recovery curve at every turn; After testing, can draw when whenever moving 1mm, be shaped as the square region gaseous tension experimental data of 1mm*20mm.Again guide rail unitary rotation 90 degree; By method noted earlier, obtain the experimental data that is shaped as 20mm*1mm from front to back, again data are handled; Can draw the gaseous tension situation of each 1mm*1mm small area, thereby the gaseous tension that can draw whole plane distributes.
The uneven problem of whole plane flowing gas pressure size to need are measured is made into grid profile gas sensor and tests, and each small components is of a size of 3mm*3mm; Designed 49 sensitive elements altogether, method of operating is: open circuit, switch is open-minded simultaneously with the B4 row when A3 is capable; And the contactor of other ranks is when breaking off; This moment, the data surveyed were (A3, B4) data of the gaseous tension that receives of coordinate place, method successively; The gas pressure data of 49 sensitive elements can be tested out, thereby the gaseous tension distribution situation (Fig. 5) on whole plane can be measured.
Embodiment 2
Present embodiment the proportioning of sensitive element be SnO 2With Al 2O 3Volume ratio be 96:4, other steps are identical with embodiment 1.

Claims (1)

1. one kind is used for the tonometric method of gas bearing air film flat gas, it is characterized in that the processing step of this method is following:
A. SnO 2Preparation: get the SnCl that mass ratio is 2:6:1 4, urea and (NH 4) 2SO 4Be dissolved in the 15mL deionized water, stirred 3 hours, add 10mL ethanol, continue to stir 30 minutes, move into agitated reactor, reaction is 24 hours under 100 ℃ of temperature; Must precipitate reactant liquor is centrifugal, 70 ℃ of dry precursors, 500 ℃ of calcinings are 2 hours in the muffle furnace, get SnO with the agate mortar porphyrize 2Product;
B. Al 2O 3Preparation: the preparation 1mol/L AlCl 3Solution 100mL adds 1g polyvinylether-polypropylene ether-polyvinylether, and 40 ℃ of water-bath magnetic agitation drip 1mol/L ammoniacal liquor to supersaturation, continue reaction 3 hours, and centrifugal, washing precipitation is to there not being Cl -, 80 ℃ of dry precursors that get were calcined 2 hours for 500 ℃ in the muffle furnace, got Al with the agate mortar porphyrize 2O 3Product;
C. the preparation of gas sensor: SnO takes a morsel 2Matrix material and a small amount of Al 2O 3Catalysis material places agate mortar for 99:1 or 96:4 by volume, drips deionized water and transfers to pasty state, is applied to aluminium oxide heating plate surface; Drying is placed on 500 ℃ of muffle furnace calcinings 4 hours; Welding was worn out 7 days on agingtable, carried out the flowing gas pressure test again;
D. with process flowmeter of the air in the air bottle and gas gauge, be sprayed onto Al by different flow rate or pressure respectively 2O 3Doping SnO 2Gas sensor on, the heating voltage of gas tester is 5V, loop voltage is 10V; The distance setting of wireway nozzle and element is 2mm, and pressing force is that 7atm, 6 atm, 5 atm, 4 atm, 3 atm, 2 atm, 1 atm, 0.5 atm test, and draws its corresponding response curve map;
E. test the constant pressure in narrow and small zone, concrete grammar is: press the method for making of gas sensor, be made into the even spraying sensitive element of 2cm*2cm shape; Through setting gaseous tension 2atm, air is derived by guide hole again, and then guide hole is moved from left to right; Each 1mm that moves, the corresponding response of record recovery curve is after testing; Can draw when whenever moving 1mm, be shaped as the square region gaseous tension experimental data of 1mm*20mm; Again guide rail unitary rotation 90 degree; By method noted earlier; Obtain the square region gaseous tension experimental data that is shaped as 20mm*1mm that guide hole moves from front to back; Again data are handled, can be drawn the gaseous tension situation of each 1mm*1mm small area, thereby the gaseous tension that can draw whole plane distributes;
F. be made into grid profile gas sensor and test, each small components is of a size of 3mm*3mm, has designed 49 sensitive elements altogether; Method of operating is: open circuit, switch is open-minded simultaneously with B4 row when A3 is capable, and the contactor of other ranks is when breaking off; This moment, the data surveyed were (A3, B4) data of the gaseous tension that receives of coordinate place, method successively; Can test out the gas pressure data of 49 sensitive elements, thereby the gaseous tension that can measure whole plane distributes.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1072622C (en) * 1996-05-22 2001-10-10 四川联合大学(四川大学) Gas sensitive alumina-based material and gas sensitive component
CN1320667C (en) * 2003-07-10 2007-06-06 上海大学 Manufacturing method of hydrogen sulfide semiconductor sensor gas sensitive element
CN101140254B (en) * 2007-10-16 2010-08-11 上海大学 Method for enhancing air-sensitive performance of metal oxide semiconductor material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3795944B2 (en) * 1995-12-18 2006-07-12 エフアイエス株式会社 Manufacturing method of semiconductor gas sensor
JP5127750B2 (en) * 2009-03-19 2013-01-23 フィガロ技研株式会社 Gas sensor and gas detection method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1072622C (en) * 1996-05-22 2001-10-10 四川联合大学(四川大学) Gas sensitive alumina-based material and gas sensitive component
CN1320667C (en) * 2003-07-10 2007-06-06 上海大学 Manufacturing method of hydrogen sulfide semiconductor sensor gas sensitive element
CN101140254B (en) * 2007-10-16 2010-08-11 上海大学 Method for enhancing air-sensitive performance of metal oxide semiconductor material

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2010-217139A 2010.09.30
JP特开平9-166567A 1997.06.24

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